JP2018056860A - Crystal element, crystal device, and method for manufacturing crystal element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a crystal element that can reduce non-oscillation or an increase in equivalent series resistance value occurring due to a wiring part that electrically connects an excitation electrode part and a lead-out part.SOLUTION: A crystal element 120 comprises: a cantilever beam-shape crystal piece 121 including a flat plate part 121a, a stationary part 121c, and an intermediate part 121b; and a metal pattern 123 including an excitation electrode part 123a provided in the flat plate part 121a, a lead-out part 123b provided on an undersurface of the stationary part 121c, and a wiring part 123c connecting the excitation electrode part 123a and lead-out part 123b. The intermediate part 121b has a through-hole 122 penetrating in the vertical direction, and parts of the metal pattern 123 are provided on a side face of the crystal piece 121 and an inner wall surface of the through-hole 122 formed in the stationary part 121c.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a crystal element, a crystal device, and a method for manufacturing a crystal element.

  In the quartz crystal device, for example, the quartz element mounted on the base is hermetically sealed in a space formed by joining the base and the lid. A crystal element used for a crystal device is composed of a crystal piece, an excitation electrode portion provided on the crystal piece, a lead portion, and a wiring portion. When an alternating voltage is applied to the lead portion, an excitation electrode is provided via the wiring portion. An alternating voltage is applied to the part, and a part of the crystal piece sandwiched between the excitation electrode parts vibrates due to the reverse piezoelectric effect and the piezoelectric effect (see, for example, Patent Document 1).

A crystal piece used in a high frequency crystal device is provided between a fixed part that is directly bonded to the substrate, a flat part that is sufficiently thinner in the vertical direction than the fixed part, and a fixed part and a flat part. And an intermediate part whose thickness in the vertical direction is gradually reduced from the part to the flat part. The fixed portion and the flat plate portion have a substantially rectangular parallelepiped shape. Further, the upper surface of the fixed portion and the upper surface of the flat plate portion are located on the same plane. A through hole penetrating in the vertical direction is formed in the intermediate portion. In the crystal element using such a crystal piece, the excitation electrode portions are provided on both main surfaces of the flat plate portion, and the lead-out portion is arranged side by side on the lower surface of the fixed portion.
At least a part of the wiring part that electrically connects the excitation electrode part and the lead part is provided on the inner wall surface of the through hole, and both main surfaces of the flat plate part, both main surfaces of the fixed part, and the middle It is provided on the surface of the part. At this time, it is in a state where it is not provided on the wiring portion, the surface that becomes the side surface of the crystal piece, specifically, the side surface of the fixed portion, the side surface of the flat plate portion, and the side surface of the inclined portion (for example, Patent Document 2). reference).

JP 2014-11647 A JP 2016-34061 A

In the conventional crystal element, the wiring portion is not provided in the portion that becomes the side surface of the crystal piece, and a part thereof is provided in the inner wall portion of the through hole formed in the intermediate portion. The excitation electrode portion provided on the upper surface and the lead portion provided on the lower surface of the fixed portion are electrically connected. At this time, the wiring portion near the opening of the through hole is partially thinned in the vertical direction or partially thinned,
There is a possibility that the wiring part is disconnected and does not oscillate, or the resistance value of the wiring part increases and the equivalent series resistance value of the crystal element increases.

  The present invention provides a crystal element and a crystal device that can reduce non-oscillation or an increase in equivalent series resistance value caused by a wiring portion that electrically connects an excitation electrode portion and a lead portion. For the purpose.

In order to solve the above-described problems, the crystal element according to the present invention is:
A substantially rectangular parallelepiped shaped flat plate portion, a substantially rectangular parallelepiped fixed portion whose thickness in the vertical direction is larger than the flat plate portion, and
A crystal piece consisting of an intermediate portion located between the flat plate portion and the fixed portion and having a thickness gradually increasing from the flat plate portion to the fixed portion,
Excitation electrode portions provided on both main surfaces of the flat plate portion, lead portions provided on the lower surface of the fixed portion, and
A metal pattern comprising a wiring part having one end connected to the excitation electrode part and the other end connected to the lead part,
A through-hole penetrating in the vertical direction is formed in the middle part, and a part of the metal pattern is
It is provided in the inner wall surface of the through-hole currently formed in the side surface and fixed part of a crystal piece.

The quartz crystal element according to the present invention is a substantially rectangular parallelepiped flat plate portion, a substantially rectangular solid fixed portion whose thickness in the vertical direction is larger than the flat plate portion, and a flat plate portion located between the flat plate portion and the fixed portion. A crystal piece composed of an intermediate portion whose thickness in the vertical direction from the fixed portion to the fixed portion, an excitation electrode portion provided on both main surfaces of the flat plate portion, a lead portion provided on the lower surface of the fixed portion, and A metal pattern composed of a wiring portion having one end connected to the excitation electrode portion and the other end connected to the lead portion;
A through-hole penetrating in the vertical direction is formed in the middle part, and a part of the metal pattern is formed of the through-hole formed in the side surface and the fixed part of the crystal piece. It is provided on the inner wall surface. For this reason, the upper surface side of a flat plate part and the lower surface side of a fixing | fixed part can be electrically connected reliably. Therefore, it is possible to reduce the non-oscillation due to the disconnection of the wiring part, or to increase the equivalent series resistance value of the crystal element due to the increase of the resistance value of the wiring part.

It is a perspective view of the quartz crystal device concerning this embodiment. It is sectional drawing in the AA cross section of FIG. 1 is a perspective view of a crystal element of Example 1. FIG. (A) is the top view which planarly viewed the upper surface of the crystal piece used with the crystal element of Example 1, (b) was planarly seen from the upper surface side the lower surface of the crystal piece used with the crystal element of Example 1. It is a top view. (A) is the top view which planarly viewed the upper surface of the crystal element of Example 1, (b) is the top view which planarly seen the lower surface of the crystal element of Example 1 from the upper surface side. It is the elements on larger scale of the B section of FIG. (A) is the top view which planarly viewed the upper surface of the crystal piece used by the crystal element of Example 2, (b) was planarly seen from the upper surface side of the lower surface of the crystal piece used for the crystal element of Example 2. It is a top view. (A) is the top view which planarly viewed the upper surface of the crystal element of Example 2, (b) is the top view which planarly seen the lower surface of the crystal element of Example 2 from the upper surface side. (A) is the top view which planarly viewed the upper surface of the crystal piece used with the crystal element of Example 3, (b) was planarly seen from the upper surface side the lower surface of the crystal piece used with the crystal element of Example 3. It is a top view. (A) is the top view which planarly viewed the upper surface of the crystal element of Example 3, (b) is the top view which planarly seen the lower surface of the crystal element of Example 3 from the upper surface side. It is the flowchart which showed the flow of the manufacturing method of the crystal element which concerns on this embodiment.

(Schematic configuration of crystal device)
FIG. 1 is a perspective view of a quartz crystal device according to the present embodiment, and FIG. 2 is a cross-sectional view taken along a line AA in FIG. The crystal device according to the present embodiment will be described with respect to the case where the crystal element 120 of Example 1 is mounted.

  A crystal device is an electronic component having a substantially rectangular parallelepiped shape as a whole, for example. For example, the quartz device has a long side or short side length of 0.6 mm to 2.0 mm, and a vertical thickness of 0.2 mm to 1.5 mm.

  The crystal device includes, for example, a base 110 in which a recess is formed, a crystal element 120 in which the recess is accommodated, a lid 130 that closes the recess, and a conductive adhesive for bonding and mounting the crystal element 120 on the base 110. Agent 140.

  The concave portion of the base 110 is sealed by a lid 130, and the inside thereof is, for example, evacuated or is filled with a suitable gas (for example, nitrogen).

  The base 110 includes, for example, a substrate part 110a that is the main body of the base 110, a frame part 110b that is provided along the edge of the upper surface of the substrate part 110a, a mounting pad 111 for mounting the crystal element 120, And mounting terminals 112 for mounting the crystal device on a circuit board (not shown) or the like. The base 110 is provided with a frame-shaped frame portion 110b along the edge of the upper surface of the substrate portion 110a, and a recess is formed.

  The base 110 composed of the substrate part 110a and the frame part 110b is made of an insulating material such as a ceramic material. The mounting pad 111 and the mounting terminal 112 are made of, for example, a conductive layer made of metal or the like, and are electrically connected to each other by a conductor (not shown) disposed in the substrate portion 110a. The lid 130 is made of, for example, metal, and is joined to the base 110, specifically, the upper surface of the frame 110b by seam welding or the like.

The crystal element 120 includes a crystal piece 121 having a cantilever shape and a metal pattern 123 provided on the crystal piece 121. The cantilever-shaped crystal piece 121 includes a thin rectangular parallelepiped flat plate portion 121a, a thin rectangular parallelepiped fixed portion 121c thinner than the flat plate portion 121a, and an intermediate portion provided between the flat plate portion 121a and the fixed portion 121c. Part 121b. Therefore,
When viewed from above, the crystal piece 121 is arranged in the order of the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c. The metal pattern 123 provided on such a crystal piece 121 includes an excitation electrode portion 123a, a lead portion 123b, and a wiring portion 123c.

  The crystal element 120 has a cantilever shape as described above, and is an AT-cut crystal element. That is, in a quartz crystal, an international coordinate system XYZ composed of an X axis (electric axis), a Y axis (mechanical axis), and a Z axis (optical axis) is 30 ° to 50 ° around the X axis (as an example, 35 ° 15 ′) When the orthogonal coordinate system XY′Z ′ is defined by rotating, it is formed from a plate-shaped crystal wafer cut out parallel to the XZ ′ plane, and the main surface of the flat plate portion 121a is parallel to the XZ ′ plane. It has become.

  The metal pattern 123 includes a pair of excitation electrode portions 123a, a lead portion 123b, and a wiring portion 123c, and is formed of a conductive material made of metal or the like. A pair of excitation electrode part 123a is provided in both the main surfaces of the flat plate part 121a, for example. Two pairs of drawer parts 123b are provided side by side on the lower surface of the fixed part 121c. The wiring part 123c has one end connected to the excitation electrode part 123a and the other end connected to the lead part 123b.

The quartz crystal element 120 is accommodated in the concave portion of the base 110 with the main surface of the flat plate portion 121a opposed to the upper surface of the substrate portion 110a of the base 110. The lead-out part 123 b is bonded to the mounting pad 111 provided on the substrate part 110 a of the base 110 by the conductive adhesive 140. Thereby, the crystal element 120 is mounted on the substrate part 110a of the base 110. In addition, the pair of excitation electrode portions 123a is formed by the wiring portion 123c, the lead portion 123b, and the conductive adhesive 140.
The mounting pad 111 provided on the base 110 is electrically connected. As a result, it is electrically connected to any two of the mounting terminals 112 provided on the substrate part 110 a of the base 110.

  The crystal device configured in this way is disposed, for example, with the lower surface of the base 110 facing the mounting surface of a circuit board (not shown), and the mounting terminals 112 are mounted on the circuit board by soldering (not shown). It is mounted on the circuit board by being bonded to the circuit board. For example, an oscillation circuit is configured on the circuit board. The oscillation circuit generates an oscillation signal by applying an alternating voltage to the excitation electrode portion 123a via the mounting terminal 112, the mounting pad 111, the lead portion 123b, and the wiring portion 123c. At this time, for example, the oscillation circuit uses fundamental wave vibration among thickness shear vibrations on the crystal piece 121.

(Configuration of crystal element)
In the present embodiment, the configuration of the crystal element will be described for each of Examples 1 to 3. FIG. 3 is a perspective view of the crystal element 120 of the first embodiment, and FIG. 5 is a plan view of the crystal element 120 of the first embodiment. FIG. 8 is a plan view of the crystal element 220 of the second embodiment. FIG. 10 is a plan view of the crystal element 320 of the third embodiment.

  In the present embodiment, when the crystal elements 120, 220, and 320 are mounted on the base 110, the main surface is a surface that is substantially parallel to the upper surface of the substrate portion 110a of the base 110, and the crystal elements 120, 220.320 to the base The description will be made assuming that the direction from 110 to the substrate portion 110a is a downward direction, and the direction from the substrate portion 110a to the crystal elements 120, 220, and 320 is an upward direction.

  Further, in this embodiment, when the crystal elements 120, 220, and 320 are mounted on the base 110, the surface substantially parallel to the upper surface of the substrate 110a facing the substrate 110a side of the base 110 is defined as the lower surface and opposite to the substrate 110a. A surface substantially parallel to the upper surface of the substrate part 110a facing the side is defined as the upper surface. Moreover, let the upper surface and the lower surface be a main surface.

Therefore, for example, in the crystal element 120 of the first embodiment, the surface of the crystal element 120 facing the substrate portion 110a is the lower surface of the crystal element 120, and the surface of the flat plate portion 121a facing the substrate portion 110a is the lower surface of the flat plate portion 121a. The surface of the fixing portion 121c facing the substrate portion 110a is the lower surface of the fixing portion 121c. Further, the surface of the crystal element 120 facing the side opposite to the substrate part 110a is the upper surface of the crystal element 120, and the surface of the flat plate part 121a facing the side opposite to the substrate part 110a is the upper surface of the flat plate part 121a. The surface of the fixing portion 121c facing the opposite side is the lower surface of the fixing portion 121c. Also,
The surface of the flat plate portion 121a that is in contact with the upper surface of the flat plate portion 121a and the lower surface of the flat plate portion 121a is the side surface of the flat plate portion 121a, and the surface of the fixed portion 121c that is in contact with the upper surface of the fixed portion 121c and the lower surface of the fixed portion 121c. Is a side surface of the fixing portion 121c.

  In the present embodiment, the crystal elements 120, 220, and 320 are arranged in the order of the flat plate portions 121a, 221a, and 321a, the intermediate portions 121b, 221b, and 321b, and the fixed portions 121c, 221c, and 321c in plan view. However, the direction aligned with the flat plate parts 121a, 221a, 321a, the intermediate parts 121b, 221b, 321b, the fixing parts 121c, 221c, 321c is the first direction, and the direction perpendicular to the first direction is the second direction. Will be described. In the present embodiment, the first direction is parallel to the X axis, and the second direction is parallel to the Z ′ axis.

Example 1
FIG. 3 is a perspective view of the crystal element 120 according to the first embodiment. 4A is a plan view of the top surface of the crystal piece 121 used in the crystal element 120 of the first embodiment, and FIG. 4B is a plan view of the crystal piece 121 used in the crystal element 120 of the first embodiment. It is the top view which carried out the plane see-through of the lower surface from the upper surface side. FIG. 5A is a plan view of the top surface of the crystal element 120 according to the first embodiment when viewed from above, and FIG. 5B is a plan view when the bottom surface of the crystal element 120 according to the first embodiment is seen through from above. It is. 6 is a partially enlarged view of a portion B in FIG.

  The crystal element 120 includes a crystal piece 121 including a flat plate portion 121a, an intermediate portion 121b, and a fixing portion 121c, and a metal pattern 123 including an excitation electrode portion 123a, a lead portion 123b, and a wiring portion 123c.

The crystal piece 121 includes a substantially rectangular parallelepiped flat plate portion 121a, a substantially rectangular parallelepiped fixing portion 121c whose thickness in the vertical direction is larger than that of the flat plate portion 121a, and an intermediate portion 121b positioned between the flat plate portion 121a and the fixing portion 121c. , And is constructed integrally. At this time, the upper surface of the crystal piece 121 is substantially parallel to the upper surface of the substrate portion 110a of the base 110, and the surface of the flat plate portion 121a facing away from the substrate portion 110a and the opposite side of the substrate portion 110a The surface of the intermediate part 121b that faces and the surface of the fixing part 121c that faces away from the substrate part 110a are located on the same plane.
Accordingly, when viewed in cross section on the Y′X plane, the intermediate portion 121b gradually increases in thickness in the vertical direction from the flat plate portion 121a to the fixed portion 121c. Further, the crystal piece 121 has a through hole 122 penetrating in the vertical direction in the intermediate portion 121b.

  The flat plate portion 121a is, for example, a substantially thin rectangular parallelepiped having a pair of principal surfaces parallel to the XZ ′ plane, and the principal surface is a substantially rectangular shape having sides parallel to the X axis and sides parallel to the Z ′ axis. . The intermediate portion 121b is located along the side parallel to the Z ′ axis of the flat plate portion 121a and located on the −X axis side.

In addition, a pair of excitation electrode portions 123a is provided on the main surface of the flat plate portion 121a. When an alternating voltage is applied to the excitation electrode portion 123a, it is sandwiched between the excitation electrode portions 123a by the reverse piezoelectric effect and the piezoelectric effect. A portion of the flat plate portion 121a vibrates. This vibration includes a thickness shear vibration that is a main vibration in which a portion sandwiched between the excitation electrode portions 123a particularly vibrates, and a contour vibration and a bending vibration that are secondary vibrations. The thickness shear vibration, which is the main vibration, vibrates most in the portion sandwiched between the excitation electrode portions 123a, and also travels from the outer edge of the excitation electrode portion 123a to the outer edge of the flat plate portion 121a in the portion not sandwiched between the excitation electrode portions 123a. The vibration is propagating in the direction.
Contour vibration, which is one of the secondary vibrations, is in a state where the shape of the crystal piece 121, for example, the flat plate portion 121a is deformed and vibrated in the flat plate portion 121a. Further, bending vibration, which is one of secondary vibrations, bends in the shape of the crystal piece 121, for example, in the direction parallel to the X axis of the flat plate portion 121a or in the direction parallel to the Z ′ axis in the flat plate portion 121a. It is in a state of vibrating.

  The intermediate portion 121b is provided along the side of the flat plate portion 121a located on the −X-axis direction side of the two sides parallel to the Z′-axis when the upper surface of the crystal piece 121 is viewed in plan view. It is a substantially rectangular shape having a side parallel to the axis and a side parallel to the Z ′ axis. At this time, when the lower surface of the crystal piece 121 is seen through from the upper surface side, two corners of the four corners of the intermediate portion 121b facing the flat plate portion 121a have an arc shape. Note that the center of this arc-shaped circle is located on the −X-axis side with respect to the side in contact with the flat plate portion 121a and the intermediate portion 121b.

By doing so, it is possible to partially change the length parallel to the Z ′ axis at the edge of the flat plate portion 121a on the intermediate portion 121b side and the edge of the intermediate portion 121b on the flat plate portion 121a side. Also at the edge of the side parallel to the X axis, the length of the intermediate portion 121b parallel to the X axis and the length of the flat plate portion 121c parallel to the X axis can be partially changed. For this reason, bending vibration and contour vibration, which are secondary vibrations, depend on the length of the vibrating portion (for example, the length parallel to the X axis or the length parallel to the Z ′ axis). By partially changing
It is possible to partially change the vibration state of the bending vibration and the contour vibration which are secondary vibrations. Therefore, it is possible to reduce a vibration state that is easily combined with the thickness shear vibration that is the main vibration among the bending vibration and the contour vibration that are the secondary vibrations. As a result, it is possible to reduce the influence of bending vibration and contour vibration, which are secondary vibrations, on the thickness shear vibration, which is the main vibration, and the vibration of the thickness shear vibration, which is the main vibration, is inhibited and the equivalent series resistance value is reduced. Can be reduced.

  In addition, when the lower surface of the crystal piece 121 is seen in a plan view from the upper surface side in this way, the two corners facing the flat plate portion 121a side out of the four corners of the intermediate portion 121b have an arc shape, thereby making the etching residual shape complicated. Therefore, the metal pattern 123 can be reliably formed at the edge between the intermediate portion 121b and the flat plate portion 121a. As a result, disconnection between the metal pattern 123 provided on the flat plate portion 121a and the metal pattern 123 provided on the intermediate portion 121b can be reduced, and the equivalent series resistance value due to disconnection or the like can be increased. It can be reduced.

  In addition, a through hole 122 penetrating in the vertical direction is formed in the intermediate portion 121b. Thus, by forming the through-hole 122 in the intermediate part 121b, the length parallel to the X axis and the length parallel to the Z ′ axis in the intermediate part 121b can be partially changed. As a result, it is possible to disperse the frequencies of the bending vibration and the contour vibration, which are secondary vibrations, and the influence of the secondary vibration on the thickness shear vibration, which is the main vibration, can be reduced. It becomes possible to reduce an increase in the resistance value.

  Further, by forming the through hole 122 penetrating in the vertical direction in the intermediate portion 121b, a part of the metal pattern 123 can be provided in the through hole 122. As a result, conduction from the upper surface side of the crystal piece 121 to the lower surface side of the crystal piece 121 can be ensured, and an increase in the equivalent series resistance value due to partial disconnection of the metal pattern 123 can be reduced. It becomes.

  The through-hole 122 has a substantially rectangular opening when viewed from the top of the crystal piece 121, and has four arcs at its four corners. Thus, by making the four corners of the opening arc-shaped, even if force concentrates on the opening of the through hole 122, it can be dispersed. As a result, it is possible to reduce the force concentrated on the four corners of the opening 122 and the damage from the four corners of the opening.

  Moreover, by making the four corners of the through-hole 122 into an arc shape, the length parallel to the X axis and the length parallel to the Z ′ axis in the intermediate portion 121b can be partially changed. As described above, since the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating portion, the bending, which is a secondary vibration, is performed in this way. The vibration state of vibration and contour vibration can be partially changed. As a result, it is possible to reduce the vibration state that is easily combined with the thickness shear vibration that is the main vibration among the bending vibration and the contour vibration that are the secondary vibration, and the thickness that the secondary vibration is the main vibration. The influence on the sliding vibration can be reduced, and the increase of the equivalent series resistance value can be reduced.

  Further, by forming the four corners of the through-hole 122 in an arc shape, when forming the metal pattern 123 on the inner wall surface of the through-hole 122, the inner wall surface of the through-hole 122 is more reliably metallized than when the metal pattern 123 is not arc-shaped. The pattern 123 can be formed. For this reason, electrical conduction in the metal pattern 123 between the upper surface of the crystal piece 121 and the lower surface of the crystal piece 121 can be reliably ensured, and an increase in equivalent series resistance value due to disconnection or partial thinning is reduced. It becomes possible to make it.

The fixed portion 121c is a thin rectangular parallelepiped, and the thickness in the vertical direction is larger than the thickness in the vertical direction of the flat plate portion 121a. The fixed portion 121c is provided along the side of the intermediate portion 121b located on the −X-axis direction side of two sides parallel to the Z′-axis when the upper surface of the crystal piece 121 is viewed in plan. , A substantially rectangular shape having sides parallel to the X axis and sides parallel to the Z ′ axis.
At this time, when the lower surface of the crystal piece 121 is seen through from above, the two corners of the four corners of the fixing portion 121c that face the intermediate portion 121b side have an arc shape. Note that the center of the arc-shaped circle is located on the −X axis side with respect to the side in contact with the intermediate portion 121b and the fixed portion 121c.

In this way, the length parallel to the Z ′ axis can be partially changed at the edge of the intermediate portion 121b on the fixed portion 121c side and the edge of the fixed portion 121c on the intermediate portion 121b side. In addition, at the edge of the side parallel to the X axis, the length of the intermediate portion 121b parallel to the X axis and the length of the fixed portion 121c parallel to the X axis can be partially changed. As described above, since the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating portion, the bending, which is a secondary vibration, is performed in this way. The vibration state of vibration and contour vibration can be partially changed. As a result, it is possible to reduce the vibration state that is easily combined with the thickness shear vibration that is the main vibration among the bending vibration and the contour vibration that are secondary vibrations,
It is possible to reduce the influence of bending vibration and contour vibration, which are secondary vibrations, on thickness-shear vibration, which is the main vibration, and the vibration of thickness-shear vibration, which is the main vibration, is obstructed and the equivalent series resistance value increases. This can be reduced.

  In addition, since the shape of the etching residual can be complicated by making the corner of the fixed portion 121c on the intermediate portion 121b side in an arc shape in this way, the edge portion between the intermediate portion 121b and the fixed portion 121c can be formed. The metal pattern 123 can be reliably formed. As a result, it is possible to reduce the disconnection between the metal pattern 123 provided in the fixing portion 121c and the metal pattern 123 provided in the intermediate portion 121b, and increase the equivalent series resistance value due to the disconnection or the like. It can be reduced.

  In addition, the fixed portion 121c has notches formed at two corners facing the opposite side of the intermediate portion 121b among the four corners of the fixed portion 121c when the crystal piece 121 is viewed in plan.

By doing so, when the crystal piece 121 is viewed in plan, the length parallel to the Z′-axis of the fixed portion 121c is set so that the length on the intermediate portion 121b side is different from the length on the opposite side to the intermediate portion 121b. can do. As described above, since the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating portion, the bending, which is a secondary vibration, is performed in this way. The vibration state of vibration and contour vibration can be partially changed. Therefore, it is possible to reduce the vibration state that is easily combined with the thickness shear vibration that is the main vibration among the bending vibration and the contour vibration that are secondary vibrations, and the bending vibration and the contour vibration that are secondary vibrations. It is possible to reduce the influence of the thickness shear vibration, which is the main vibration.
As a result, it is possible to reduce the increase in the equivalent series resistance value because the vibration of the thickness shear vibration, which is the main vibration, is hindered by the bending vibration and the contour vibration, which are secondary vibrations.

  Further, when the crystal piece 121 is viewed in plan in this way, the number of side surfaces of the fixed portion 121c is increased by forming notches in two corners facing the opposite side of the intermediate portion 121b among the four corners of the fixed portion 121c. be able to. Accordingly, since the etching rate varies depending on the positional relationship with the crystal axes (X axis, Y ′ axis, Z ′ axis), increasing the number of side surfaces increases the side surface of the fixing portion 121c and the upper surface of the fixing portion 121c. The range of angles formed by the lower surface of the fixed portion 121c can be widened. For this reason, in the edge part of the side surface of the fixing | fixed part 121c, the upper surface of the fixing | fixed part 121c, or the lower surface of the fixing | fixed part 121c, the angle made by a side surface and an upper surface or a lower surface becomes steep, and it can reduce that the metal pattern 123 disconnects. it can. As a result, it is possible to reduce an increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

  Further, when the crystal piece 121 is viewed in plan in this way, the crystal piece 121 is formed in a crystal wafer shape by forming notches in two corners facing the opposite side of the intermediate portion 121b among the four corners of the fixed portion 121c. In this case, the distance between the fixed portions 121c of the adjacent crystal pieces 121 can be made longer than the distance between the flat plate portions 121a of the adjacent crystal pieces 121. For this reason, it can be reduced that the adjacent crystal piece 121 becomes a shadow when the metal pattern 123 is provided on the side surface of the fixing portion 121c and the metal pattern 123 cannot be provided on the side surface of the fixing portion 121c. Therefore, by doing in this way, the metal pattern 123 can be reliably provided on the side surface of the fixing portion 121c, and the increase in the equivalent series resistance value due to the disconnection can be reduced.

  At this time, when the crystal piece 121 is viewed in plan, the notch has a substantially rectangular shape, and the side of the notch located on the + X-axis side among the sides parallel to the Z ′ axis has an arc shape. It has become.

By doing in this way, when the crystal piece 121 is viewed in plan, the length parallel to the Z′-axis of the fixed portion 121c can be partially different. Further, the length of the fixed portion 121c parallel to the X axis can be partially different. As described above, since the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating portion, the bending, which is a secondary vibration, is performed in this way. The vibration state of vibration and contour vibration can be partially changed. For this reason, it is possible to reduce the vibration state that is easily combined with the thickness shear vibration that is the main vibration among the bending vibration and the contour vibration that are the secondary vibrations, and the bending vibration and the contour vibration that are the secondary vibrations. It is possible to reduce the influence on the thickness shear vibration which is the main vibration.
As a result, it is possible to reduce the increase in the equivalent series resistance value because the vibration of the thickness shear vibration, which is the main vibration, is hindered by the bending vibration and the contour vibration, which are secondary vibrations.

  Moreover, the number of side surfaces of the fixing portion 121c in which the notch portion is formed can be increased by making the side of the notch arc shape in this way. Accordingly, since the etching rate varies depending on the positional relationship with the crystal axes (X axis, Y ′ axis, Z ′ axis), increasing the number of side surfaces increases the side surface of the fixing portion 121c and the upper surface of the fixing portion 121c. The range of angles formed by the lower surface of the fixed portion 121c can be widened. For this reason, in the edge part of the side surface of the fixing | fixed part 121c, the upper surface of the fixing | fixed part 121c, or the lower surface of the fixing | fixed part 121c, the angle made by a side surface and an upper surface or a lower surface becomes steep, and it can reduce that the metal pattern 123 disconnects. it can. As a result, it is possible to reduce an increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

The metal pattern 123 provided on the crystal piece 121 is for applying a voltage from the outside of the crystal element 120. The metal pattern 123 may be a single layer, or a plurality of metal layers may be laminated. Although not particularly illustrated, the metal pattern 123 includes, for example, a first metal layer and a second metal layer stacked on the first metal layer. For the first metal layer, a metal having good adhesion to quartz is used, and for example, any one of nickel, chromium, nichrome, or titanium is used. By using a metal having good adhesion to the crystal for the first metal layer, a metal that is difficult to adhere to the crystal can be used for the second metal layer. The second metal layer has a low electrical resistivity among the metal materials, and a stable material is used.
For example, any one of gold, an alloy containing gold, silver, or an alloy containing silver is used. By using a material having a relatively low electrical resistivity, the resistivity of the metal pattern 123 itself can be reduced, and as a result, an increase in the equivalent series resistance value of the crystal element 120 can be reduced. In addition, by using a stable metal material, it is possible to reduce a change in the frequency of the crystal element 120 due to a change in the weight of the metal pattern 123 due to a reaction with surrounding air in which the crystal element 120 exists.

The excitation electrode portion 123a is for applying a voltage to the flat plate portion 121a. The excitation electrode part 123a is a pair. The excitation electrode portion 123a has a substantially rectangular shape with the crystal element 120 being planar. The excitation electrode part 123a is a plan view of the crystal element 120. For example, the center of the excitation electrode part 123a (specifically, the intersection of diagonal lines of the excitation electrode part 123a) is the center of the flat plate part 121a (specifically, Compared to the intersection of the diagonal lines of the flat plate portion 121a, the flat plate portion 121a is provided at a position away from the intermediate portion 121b. By doing so, when a voltage is applied to the excitation electrode portion 123a and a part of the flat plate portion 121a sandwiched between the excitation electrode portions 123a vibrates, the flat plate portion 121a starts from the portion sandwiched between the excitation electrode portions 123a. Even if the vibration propagates to the edge of the plate and the vibration propagated to the edge of the flat plate portion 121a is reflected by the intermediate portion 121b, the vibration reflected by the intermediate portion 121b is sandwiched by the excitation electrode portion 123a. It is possible to reduce the amount of hindering vibration. As a result, an increase in the equivalent series resistance value of the crystal element 120 can be reduced.

  When the crystal element 120 is used as a crystal device, the lead-out part 123b is for mounting on the base 110, and is electrically connected by the mounting pad 111 provided on the upper surface of the substrate part 110a of the base 110 and the conductive adhesive 140. Glued together. The lead-out portions 123b are paired, and are provided at two positions facing the mounting pad 111 of the substrate portion 110a and in parallel with the Z ′ axis on the lower surface of the fixed portion 121.

  The wiring part 123c is for electrically connecting the excitation electrode part 123a and the lead part 123b, and is provided on the surface of the crystal piece 121.

  When the side surface of the crystal element 120 parallel to the X axis and the Y ′ axis is viewed, a part of the metal pattern 123 is provided on this surface. At this time, the metal pattern 123 is formed so as to straddle the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c of the crystal piece 121.

  By doing in this way, the portion connected to the metal pattern 123 on the upper surface side of the crystal piece 121 and the metal pattern 123 on the lower surface side of the crystal piece 121 is increased, so that it is provided on the upper surface side of the crystal piece 121. Thus, the metal pattern 123 and the metal pattern 123 on the lower surface side of the crystal piece 121 can be reliably conducted. For this reason, an increase in the equivalent series resistance value due to the disconnection of the metal pattern 123 can be reduced.

  Further, in this way, by providing a part of the metal pattern 123 so as to straddle the flat plate part 121a, the intermediate part 121b and the fixed part 121c on the side surface of the crystal piece 121 parallel to the X axis and the Y ′ axis, The metal pattern 123 serves as a weight, and bending vibration and contour vibration generated in a direction parallel to the Z ′ axis can be suppressed in the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c. As a result, secondary bending vibration and contour vibration can be suppressed, so that it is possible to reduce the influence of bending vibration and contour vibration, which are secondary vibrations, on thickness shear vibration, which is the main vibration. It is possible to reduce an increase in the equivalent series resistance value due to bending vibration and contour vibration, which are secondary vibrations.

  Further, when the lower surface of the crystal element 120 is seen through from the upper surface side, the metal pattern 123 provided on the flat plate portion 121a is partially different in length parallel to the Z ′ axis. In the present embodiment, for example, the length parallel to the Z ′ axis of the metal pattern 123 provided along the side of the flat plate portion 121a on the intermediate portion 121b side, and the boundary portion between the excitation electrode portion 123a and the wiring portion 123c. The length parallel to the Z ′ axis of the wiring portion 123c is different.

  By doing so, the length of the metal pattern 123 parallel to the Z′-axis can be increased at the step between the flat plate portion 121a and the intermediate portion 121b, so that there is a step between the flat plate portion 121a and the intermediate portion 121b. It is possible to reduce disconnection due to being present. Further, by reducing the length parallel to the Z′-axis of the wiring part 123c on the excitation electrode part 123a side to be shorter than the length parallel to the Z′-axis of the wiring part 123c on the intermediate part 121b side, the above-described disconnection is reduced. In addition, the vibration inhibition to the thickness shear vibration, which is the main vibration due to the provision of the wiring portion 123c, is reduced.

  Further, since a part of the metal pattern 123 is provided at the end portion of the flat plate portion 121a on the intermediate portion 121b side, bending vibration at the end portion of the flat plate portion 121a on the intermediate portion 121b side is reduced. It is possible to make it. As a result, it is possible to reduce an increase in the equivalent series resistance value due to secondary bending vibration.

Of the metal pattern 123 provided on the flat plate portion 121a, the length parallel to the X axis of a part of the metal pattern 123 whose length parallel to the Z′-axis is partially increased is the length of the flat plate portion 121a. It is 0.05 times or more and 0.1 times or less of the length parallel to the X axis. When this length is smaller than 0.05 times the length parallel to the X axis of the flat plate portion 121a, the length of the metal pattern 123 parallel to the Z ′ axis at the step between the intermediate portion 121b and the flat plate portion 121a is There is a risk that the equivalent series resistance value may be increased due to short-circuiting and partial disconnection. When the length of the flat plate portion 121a is greater than 0.1 times the length parallel to the X axis,
The metal pattern 123 (part of the thick metal pattern 123) provided on the flat plate part 121a on the intermediate part 121a side is close to the excitation electrode part 123a, and the thickness-shear vibration, which is the main vibration, is hindered and equivalent series. There is a possibility that the resistance value becomes large. That is, the length parallel to the X axis of the portion of the wiring portion 123c provided in the flat plate portion 121a where the length parallel to the Z ′ axis is partially thick is parallel to the X axis of the flat plate portion 121a. By setting the length to be 0.05 times or more and 0.1 times or less of this length, an increase in the equivalent series resistance value is reduced.

  In addition, the length of the part of the wiring portion 123c provided on the flat plate portion 121a that is partially long in parallel with the Z′-axis is equal to the Z′-axis of the metal pattern 123 provided on the intermediate portion 121b. The length is substantially the same as the parallel length, and is substantially the same as the length parallel to the Z′-axis of the metal pattern 123 provided in the fixed portion 121c. That is, when the lower surface of the crystal element 120 is seen through from the upper surface side, the metal pattern 123 is provided across the fixed portion 121c, the intermediate portion 121b, and the flat plate portion 121a.

  By doing in this way, it can reduce that metal pattern 123 breaks in the level difference between fixed part 121c and middle part 121b, and the level difference between middle part 121b and flat plate part 121a. As a result, it is possible to reduce an increase in the transmission series resistance value due to disconnection of a part of the metal pattern 123 at each step.

  In addition, by doing so, the metal pattern 123 is provided at the end of the intermediate portion 121b and the flat plate portion 121a on the intermediate portion 121b side, so that the metal pattern 123 serves as a weight, and the intermediate portion It is possible to reduce bending vibration and contour vibration, which are secondary vibrations, at the ends of the flat plate portion 121a on the 121b and intermediate portion 121b sides. As a result, it is possible to reduce the bending vibration and the contour vibration that are secondary vibrations from inhibiting the thickness shear vibration that is the main vibration, and the equivalent series resistance can be reduced by inhibiting the thickness shear vibration that is the main vibration. It becomes possible to reduce an increase in value.

  As described above, when the lower surface of the crystal element 120 is viewed in plan from the upper surface side, the metal pattern 123 has a length parallel to the Z ′ axis of the fixed portion 121c, a length parallel to the Z ′ axis of the intermediate portion 121b, and a flat plate portion. 121a is provided across the fixed portion 121c, the intermediate portion 121b, and the flat plate portion 121a so that the length parallel to the Z′-axis of the 121a is substantially the same.

  In this way, the metal pattern 123 can be provided on the upper surface side of the crystal piece 121 and the lower surface side of the crystal piece 121. Therefore, it is possible to reduce the disconnection between the metal pattern 123 provided on the upper surface side of the crystal piece 121 and the metal pattern 123 provided on the lower surface side of the crystal piece 121. As a result, an increase in the equivalent series resistance value due to the disconnection of the metal pattern 123 can be reduced.

  Further, by providing the metal pattern 123 on the inner wall surface of the through-hole 122 in this way, the metal pattern 123 provided on the inner wall surface serves as a weight, so that bending vibration and contour vibration, which are secondary vibrations, are performed. It can be reduced. As a result, it is possible to reduce the bending vibration and the contour vibration that are secondary vibrations from inhibiting the thickness-shear vibration that is the main vibration, and the equivalent series resistance can be reduced by inhibiting the thickness-slip vibration that is the main vibration. It becomes possible to reduce an increase in value.

From another viewpoint, when the lower surface of the crystal element 120 is seen in a plan view from the upper surface side, the shortest distance from the opening of the through hole 122 to the side parallel to the X axis of the adjacent crystal piece 121 is provided in the intermediate portion 121b. It can be said that the metal pattern 123 is shorter than the length parallel to the Z ′ axis. At this time, the difference between the length parallel to the Z′-axis of the metal pattern 123 provided in the intermediate portion 121b and the shortest distance from the opening of the through hole 122 to the side parallel to the X-axis of the adjacent crystal piece 121 is The length parallel to the Z′-axis of the opening of the through hole 122 is not less than 0.1 times and not more than 0.4 times. When this difference is less than 0.1 times the length parallel to the Z′-axis of the opening of the through-hole 122,
Since the four corners of the through-hole 122 have an arc shape, they are provided only at locations where the shape is complicated, and the metal pattern 123 provided on the inner wall surface may be disconnected. When the difference is larger than 0.4 times, the distance to the adjacent metal pattern 123 becomes short, and there is a possibility that the adjacent metal pattern 123 is short-circuited. Therefore, the length parallel to the Z ′ axis of the metal pattern 123 provided on the inner wall surface of the through hole 122 is 0.1 times or more of the length parallel to the Z ′ axis of the opening of the through hole 122 and 0. By setting it to 4 times or less, a short circuit with the adjacent metal pattern 123 is reduced while the disconnection at the inner wall surface of the through hole 122 is reduced.

Such a crystal element 120 has a substantially rectangular parallelepiped flat plate portion 121a, a substantially rectangular parallelepiped fixed portion 121c whose thickness in the vertical direction is larger than the flat plate portion 121a, and between the flat plate portion 121a and the fixed portion 121c. The crystal piece 121, which is located and has an intermediate portion 121b whose thickness in the vertical direction gradually increases from the flat plate portion 121a to the fixed portion 121c, and the excitation electrode portion 123a provided on both main surfaces of the flat plate portion 121a, fixed A metal pattern 123 comprising a lead part 123b provided on the lower surface of the part 121c, and a wiring part 123c having one end connected to the excitation electrode part 123a and the other end connected to the lead part 123b;
The through hole 122 penetrating in the vertical direction is formed in the intermediate part 121b, and a part of the metal pattern 123 is formed on the side surface of the crystal piece 121 and the fixing part 121c. It is provided on the inner wall surface of the through hole 122.

  From another viewpoint, when the side surface of the quartz crystal element 120 parallel to the X axis and the Y ′ axis is viewed, a part of the metal pattern 123 is provided on this surface. At this time, it can be said that the metal pattern 123 is formed so as to straddle the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c of the crystal piece 121.

  By doing in this way, the portion connected to the metal pattern 123 on the upper surface side of the crystal piece 121 and the metal pattern 123 on the lower surface side of the crystal piece 121 is increased, so that it is provided on the upper surface side of the crystal piece 121. Thus, the metal pattern 123 and the metal pattern 123 on the lower surface side of the crystal piece 121 can be reliably conducted. For this reason, an increase in the equivalent series resistance value due to the disconnection of the metal pattern 123 can be reduced.

Further, in this way, by providing a part of the metal pattern 123 so as to straddle the flat plate part 121a, the intermediate part 121b and the fixed part 121c on the side surface of the crystal piece 121 parallel to the X axis and the Y ′ axis, The metal pattern 123 serves as a weight, and bending vibration and contour vibration generated in a direction parallel to the Z ′ axis can be suppressed in the flat plate portion 121a, the intermediate portion 121b, and the fixed portion 121c. As a result, secondary bending vibration and contour vibration can be suppressed, so that it is possible to reduce the influence of bending vibration and contour vibration, which are secondary vibrations, on thickness shear vibration, which is the main vibration. ,
It is possible to reduce an increase in the equivalent series resistance value due to bending vibration and contour vibration, which are secondary vibrations.

  Further, in such a crystal element 120, when the lower surface of the crystal piece 121 is viewed in plan, the upper surface of the flat plate portion 121a and the upper surface of the fixing portion 121c are located on the same plane, and the middle facing the flat plate portion 121a side. The corner portion of the portion 121b has an arc shape.

By doing so, it is possible to partially change the length parallel to the Z ′ axis at the edge of the flat plate portion 121a on the intermediate portion 121b side and the edge of the intermediate portion 121b on the flat plate portion 121a side. Also at the edge of the side parallel to the X axis, the length of the intermediate portion 121b parallel to the X axis and the length of the flat plate portion 121c parallel to the X axis can be partially changed. For this reason, bending vibration and contour vibration, which are secondary vibrations, depend on the length of the vibrating portion (for example, the length parallel to the X axis or the length parallel to the Z ′ axis). It is possible to partially change the vibration state of bending vibration and contour vibration, which are secondary vibrations, by partially changing.
As a result, it is possible to reduce the vibration state that is easily coupled with the thickness shear vibration that is the main vibration among the bending vibration and the contour vibration that are the secondary vibrations, and the bending vibration and the contour vibration that are the secondary vibrations. It is possible to reduce the influence on the thickness shear vibration, which is the main vibration, and it is possible to reduce the increase in the equivalent series resistance value due to the inhibition of the thickness shear vibration, which is the main vibration.

  In addition, when the lower surface of the crystal piece 121 is seen in a plan view from the upper surface side in this way, the two corners facing the flat plate portion 121a side out of the four corners of the intermediate portion 121b have an arc shape, thereby making the etching residual shape complicated. Therefore, the metal pattern 123 can be reliably formed at the edge between the intermediate portion 121b and the flat plate portion 121a. As a result, disconnection between the metal pattern 123 provided on the flat plate portion 121a and the metal pattern 123 provided on the intermediate portion 121b can be reduced, and the equivalent series resistance value due to disconnection or the like can be increased. It can be reduced.

  Further, such a crystal element 120 has a flat plate portion 121a, an intermediate portion 121b, and a fixed portion with the upper surface of the flat plate portion 121a and the upper surface of the fixed portion 121b positioned on the same plane when the crystal piece 121 is viewed in plan. The portions 121c are arranged in order, and a notch is formed in the fixed portion 121c facing the opposite side to the flat plate portion 121a.

From another viewpoint, the flat plate portion 121a having a substantially rectangular parallelepiped shape, a fixed portion 121c having a substantially rectangular parallelepiped shape whose thickness in the vertical direction is thicker than the flat plate portion 121a, and the flat plate portion 121a and the fixed portion 121c are positioned between the flat plate portion 121a and the fixed portion 121c. The crystal piece 121 including the intermediate portion 121b whose thickness in the vertical direction gradually increases from the flat plate portion 121a to the fixed portion 121c, the excitation electrode portion 123a provided on the flat plate portion 121a, and the lower surface of the fixed portion 121c. The lead-out part 123b, and the wiring part 123c whose one end is connected to the excitation electrode part 123a and the other end is connected to the lead-out part 123b
A crystal element 120 having a metal pattern 123, and in a plan view of the crystal element 120, a direction in which the fixed portion 121c, the intermediate portion 121b, and the flat plate portion 121a are arranged in this order is a first direction ( X-axis direction), and when the direction perpendicular to the first direction (X-axis direction) is the second direction (Z′-axis direction), the length of the intermediate portion 121b in the second direction (Z′-axis direction) is It can be said that it is longer than the length of the fixed part 121c in the second direction (Z′-axis direction).

By doing so, when the crystal piece 121 is viewed in plan, the length parallel to the Z′-axis of the fixed portion 121c is set so that the length on the intermediate portion 121b side is different from the length on the opposite side to the intermediate portion 121b. can do. As described above, since the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating portion, the bending, which is a secondary vibration, is performed in this way. The vibration state of vibration and contour vibration can be partially changed. For this reason, it is possible to reduce the vibration state that is easily combined with the thickness shear vibration that is the main vibration among the bending vibration and the contour vibration that are the secondary vibrations, and the bending vibration and the contour vibration that are the secondary vibrations. It is possible to reduce the influence on the thickness shear vibration which is the main vibration. As a result, it is possible to reduce the increase in the equivalent series resistance value because the vibration of the thickness shear vibration, which is the main vibration, is hindered by the bending vibration and the contour vibration, which are secondary vibrations.

Further, when the crystal piece 121 is viewed in plan in this way, the number of side surfaces of the fixed portion 121c is increased by forming notches in two corners facing the opposite side of the intermediate portion 121b among the four corners of the fixed portion 121c. be able to. Accordingly, since the etching rate varies depending on the positional relationship with the crystal axes (X axis, Y ′ axis, Z ′ axis), increasing the number of side surfaces increases the side surface of the fixed portion 121c and the upper surface of the fixed portion 121c The range of angles formed by the lower surface of the fixed portion 121c can be widened. For this reason, in the edge part of the side surface of the fixing | fixed part 121c, the upper surface of the fixing | fixed part 121c, or the lower surface of the fixing | fixed part 121c, the angle made by a side surface and an upper surface or a lower surface becomes steep, and it can reduce that the metal pattern 123 disconnects. it can. As a result, it is possible to reduce an increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

Further, when the crystal piece 121 is viewed in plan in this way, the crystal piece 121 is formed in a crystal wafer shape by forming notches in two corners facing the opposite side of the intermediate portion 121b among the four corners of the fixed portion 121c. In this case, the distance between the fixed portions 121c of the adjacent crystal pieces 121 can be made longer than the distance between the flat plate portions 121a of the adjacent crystal pieces 121. For this reason, it can be reduced that the adjacent crystal piece 121 becomes a shadow when the metal pattern 123 is provided on the side surface of the fixing portion 121c and the metal pattern 123 cannot be provided on the side surface of the fixing portion 121c.
Therefore, by doing in this way, the metal pattern 123 can be reliably provided on the side surface of the fixing portion 121c, and the increase in the equivalent series resistance value due to the disconnection can be reduced.

  Further, such a crystal element 120 has a length in the second direction (Z′-axis direction) of the fixing part 121c at the edge of the fixing part 121c on the intermediate part 121b side when the crystal element 120 is viewed in plan. The shape is long and rounded.

By doing in this way, when the crystal piece 121 is viewed in plan, the length parallel to the Z′-axis of the fixed portion 121c can be partially different. Further, the length of the fixed portion 121c parallel to the X axis can be partially different. As described above, since the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating portion, the bending, which is a secondary vibration, is performed in this way. The vibration state of vibration and contour vibration can be partially changed. For this reason, it is possible to reduce the vibration state that is easily combined with the thickness shear vibration that is the main vibration among the bending vibration and the contour vibration that are secondary vibrations,
It is possible to reduce the influence of bending vibration and contour vibration, which are secondary vibrations, on thickness shear vibration, which is the main vibration. As a result, it is possible to reduce the increase in the equivalent series resistance value because the vibration of the thickness shear vibration, which is the main vibration, is hindered by the bending vibration and the contour vibration, which are secondary vibrations.

Moreover, the number of side surfaces of the fixing portion 121c in which the notch portion is formed can be increased by making the side of the notch arc shape in this way. Accordingly, since the etching rate varies depending on the positional relationship with the crystal axes (X axis, Y ′ axis, Z ′ axis), increasing the number of side surfaces increases the side surface of the fixing portion 121c and the upper surface of the fixing portion 121c. The range of angles formed by the lower surface of the fixed portion 121c can be widened. For this reason, in the edge part of the side surface of the fixing | fixed part 121c, the upper surface of the fixing | fixed part 121c, or the lower surface of the fixing | fixed part 121c, the angle made by a side surface and an upper surface or a lower surface becomes steep, and it can reduce that the metal pattern 123 disconnects. it can.
As a result, it is possible to reduce an increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

  Further, in such a crystal element 120, a through hole 122 penetrating in the vertical direction is formed in the intermediate portion 121b.

  Thus, by forming the through-hole 122 in the intermediate part 121b, the length parallel to the X axis and the length parallel to the Z ′ axis in the intermediate part 121b can be partially changed. As described above, since the vibration state of the bending vibration and the contour vibration, which are secondary vibrations, is related to the length of the vibrating portion, the bending, which is a secondary vibration, is performed in this way. The vibration state of vibration and contour vibration can be partially changed. As a result, it is possible to reduce the vibration state that is easily combined with the thickness shear vibration that is the main vibration among the bending vibration and the contour vibration that are the secondary vibration, and the thickness that the secondary vibration is the main vibration. The influence on the sliding vibration can be reduced, and the increase of the equivalent series resistance value can be reduced.

  Further, by forming the through hole 122 penetrating in the vertical direction in the intermediate portion 121b, a part of the metal pattern 123 can be provided in the through hole 122. As a result, conduction from the upper surface side of the crystal piece 121 to the lower surface side of the crystal piece 121 can be ensured, and an increase in the equivalent series resistance value due to partial disconnection of the metal pattern 123 can be reduced. It becomes.

  Further, in such a crystal element 120, a part of the metal pattern 123 is provided on the inner wall surface of the through hole 122.

  In this way, the metal pattern 123 can be provided on the upper surface side of the crystal piece 121 and the lower surface side of the crystal piece 121. Therefore, it is possible to reduce the disconnection between the metal pattern 123 provided on the upper surface side of the crystal piece 121 and the metal pattern 123 provided on the lower surface side of the crystal piece 121. As a result, an increase in the equivalent series resistance value due to the disconnection of the metal pattern 123 can be reduced.

  Further, by providing the metal pattern 123 on the inner wall surface of the through-hole 122 in this way, the metal pattern 123 provided on the inner wall surface serves as a weight, so that bending vibration and contour vibration, which are secondary vibrations, are performed. It can be reduced. As a result, it is possible to reduce the bending vibration and the contour vibration that are secondary vibrations from inhibiting the thickness-shear vibration that is the main vibration, and the equivalent series resistance can be reduced by inhibiting the thickness-slip vibration that is the main vibration. It becomes possible to reduce an increase in value.

  Further, when the side surface (parallel to the X-axis and Y′-axis) of the crystal element 120 is viewed in plan, such a crystal element 120 has a part of the metal pattern 123 that has the flat plate portion 121a and the intermediate portion as described above. 121b and the fixed part 121c are provided so that it may straddle. That is, it can be said that a part of the metal pattern 123 is provided on the side surface of the fixing portion 121c and the side surface of the intermediate portion 121b.

  Accordingly, by providing a part of the metal pattern 123 on the side surface (parallel to the X axis and Y ′ axis) of the fixing portion 121 c and the side surface (parallel to the X axis and Y ′ axis) of the intermediate portion 121 b in this way. The metal pattern 123 serves as a weight, and the bending vibration and the contour vibration generated in the direction parallel to the Z ′ axis can be suppressed in the fixed portion 121c and the intermediate portion 121b. As a result, it becomes possible to reduce the influence of bending vibration and contour vibration, which are secondary vibrations, on the thickness shear vibration, which is the main vibration, and equivalent series by bending vibration and contour vibration, which are secondary vibrations. An increase in the resistance value can be reduced.

(Example 2)
Next, the crystal element 220 according to Example 2 of the present embodiment will be described. In addition, the part similar to the crystal element 220 mentioned above among the crystal elements 220 in Example 2 of the present embodiment will be described with appropriate reference numerals. FIG. 7A is a plan view of the top surface of the crystal piece 221 used in the crystal element 220 of the second embodiment, and FIG. 7B is a plan view of the crystal piece 221 used in the crystal element 220 of the second embodiment. It is the top view which carried out the plane see-through of the lower surface from the upper surface side. FIG. 8A is a plan view of the upper surface of the crystal element 220 according to the second embodiment when viewed from above, and FIG. 8B is a plan view when the lower surface of the crystal element 220 according to the second embodiment is seen through from above. It is.

  In the crystal element 220 according to Example 2 of the present embodiment, the length of the intermediate part 221b parallel to the Z ′ axis is compared with the length of the fixed part 221c parallel to the Z ′ axis in plan view of the crystal element 220. Thus, the second embodiment is different from the first embodiment in that it is shortened.

  The crystal element 220 according to the second embodiment includes a crystal piece 221 that has a cantilever shape in cross-section and a metal pattern 223 provided on the crystal piece 221.

  The crystal piece 221 is positioned between the flat plate portion 221a, the fixed portion 221c having a substantially rectangular parallelepiped shape whose thickness in the vertical direction is thicker than the flat plate portion 221a, and between the flat plate portion 221a and the fixed portion 221c. It is comprised from the intermediate part 221b from which the thickness of an up-down direction is gradually thickened from 221a to the fixing | fixed part 221c. Further, a through hole 222 penetrating in the vertical direction is formed in the intermediate portion 221b of the crystal piece 221.

  Here, in a plan view of the crystal piece 221, the direction in which the fixed portion 221 c, the intermediate portion 221 b, and the flat plate portion 221 a of the crystal piece 221 are arranged is the first direction, and the direction orthogonal to the first direction is the second direction. And The first direction is parallel to the X axis of the crystal, and the second direction is parallel to the Z ′ axis.

  When the lower surface of the crystal piece 121 is seen through from the upper surface side, the length of the intermediate portion 221b in the direction perpendicular to the X axis is substantially the same as the length of the flat plate portion 221a in the direction perpendicular to the X axis. The length is shorter than the length of the fixed portion 221c in the direction perpendicular to the axis.

  By doing so, the vibration state of the bending vibration and the contour vibration, which are secondary vibrations generated in a direction parallel to the Z ′ axis, can be made different between the intermediate portion 221b and the fixed portion 221c. It is possible to reduce the vibration state that is easily coupled with the thickness shear vibration that is the main vibration among the bending vibration and the contour vibration that are the secondary vibrations, and the bending vibration and the contour vibration that are the secondary vibrations are mainly used. It is possible to reduce the influence of vibration on the thickness shear vibration. As a result, it is possible to reduce the increase in the equivalent series resistance value because the vibration of the thickness shear vibration, which is the main vibration, is hindered by the bending vibration and the contour vibration, which are secondary vibrations.

  Moreover, by doing in this way, when the crystal piece 221 is planarly viewed, the number of side surfaces at the boundary between the fixed portion 221c and the intermediate portion 221b can be increased. Accordingly, since the etching rate varies depending on the positional relationship with the crystal axes (X axis, Y ′ axis, Z ′ axis), increasing the number of side surfaces can increase the side surface of the fixing portion 221c and the upper surface of the fixing portion 221c. The range of the angle formed by the lower surface of the fixed portion 221c can be widened. For this reason, at the edge of the side surface of the fixing portion 221c and the upper surface of the fixing portion 221c or the lower surface of the fixing portion 221c, the angle formed between the side surface and the upper surface or the lower surface becomes steep, thereby reducing the disconnection of the metal pattern 223. it can. As a result, it is possible to reduce an increase in the equivalent series resistance value due to the disconnection of the metal pattern 123.

  In addition, in this way, when the crystal piece 221 is formed in a crystal wafer shape, the distance between the flat plate portions 221a of the adjacent crystal pieces 221 is compared with the distance between the fixed portions 121c of the adjacent crystal pieces 221. The distance can be increased. For this reason, it can be reduced that the adjacent crystal piece 221 becomes a shadow when the metal pattern 223 is provided on the side surface of the fixing portion 221c and the metal pattern 223 cannot be provided on the side surface of the fixing portion 221c. Therefore, by doing in this way, the metal pattern 223 can be reliably provided on the side surface of the fixed portion 221c, and an increase in the equivalent series resistance value due to disconnection can be reduced.

  Accordingly, the crystal element 220 is arranged in the order of the flat plate portion 221a, the intermediate portion 221b, and the fixed portion 221c in a state where the upper surface of the flat plate portion 221a and the upper surface of the fixed portion 221c are located on the same plane. When the crystal piece 221 is viewed in plan, the length of the intermediate portion 221b is longer than the length of the fixed portion 221c in a direction perpendicular to the direction in which the flat plate portion 221a, the intermediate portion 221b, and the fixed portion 221c are arranged. It has become. For this reason, it can reduce that an equivalent series resistance value becomes large as mentioned above.

(Example 3)
A crystal element 320 according to Example 3 of the present embodiment will be described. In addition, the part similar to the crystal element 220 mentioned above among the crystal elements 320 in the Example of this embodiment is attached | subjected with the same code | symbol, and is demonstrated suitably. FIG. 9A is a plan view of the top surface of the crystal piece 321 used in the crystal element 320 of the third embodiment, and FIG. 9B is a plan view of the crystal piece 321 used in the crystal element 320 of the third embodiment. It is the top view which carried out the plane see-through of the lower surface from the upper surface side. FIG. 10A is a plan view of the upper surface of the crystal element 320 of the third embodiment, and FIG. 10B is a plan view of the lower surface of the crystal element 320 of the third embodiment seen through from the upper surface side.

  In the crystal element 320 according to Example 3 of the present embodiment, the length parallel to the Z ′ axis of the intermediate portion 321b parallel to the Z ′ axis is fixed in parallel to the Z ′ axis when the crystal element 320 is viewed in plan. The second embodiment is different from the second embodiment in that it is shorter than the length of the portion 212c and shorter than the length of the flat plate portion 321a parallel to the Z ′ axis.

  The crystal element 320 according to the third embodiment includes a crystal piece 321 that has a cantilever shape in cross section and a metal pattern 323 provided on the crystal piece 321.

  The crystal piece 321 is located between the flat plate portion 321a, the flat plate portion 321a having a substantially rectangular parallelepiped shape, the fixed portion 321c having a substantially rectangular parallelepiped shape whose thickness in the vertical direction is larger than that of the flat plate portion 321a, and the flat plate portion 321a. It is comprised from the intermediate part 321b from which the thickness of an up-down direction is gradually thickened to the fixing | fixed part 321c. Further, a through hole 322 penetrating in the vertical direction is formed in the intermediate portion 321 b of the crystal piece 321.

  Here, in a plan view of the crystal piece 321, the direction in which the fixed portion 321 c, the intermediate portion 321 b, and the flat plate portion 321 a of the crystal piece 321 are arranged is a first direction, and a direction orthogonal to the first direction is a second direction. And The first direction is parallel to the X axis of the crystal, and the second direction is parallel to the Z ′ axis.

  When the lower surface of the crystal piece 321 is seen through from the upper surface side, the length parallel to the Z ′ axis of the intermediate portion 321b is shorter than the length parallel to the Z ′ axis of the flat plate portion 321a, and the fixing portion 321c. It is shorter than the length parallel to the Z ′ axis.

  By doing so, the vibration states of the bending vibration and the contour vibration, which are secondary vibrations generated in a direction parallel to the Z′-axis, are made different in the flat plate portion 321a, the intermediate portion 321b, and the fixing portion 321c. Can do. In addition, by making the length of the intermediate portion 321b parallel to the Z ′ axis longer than the length of the flat plate portion 321a parallel to the Z ′ axis, the flat plate portion 321a is prevented from being bent in parallel to the Z ′ axis. It becomes possible to make it. Therefore, by doing in this way, the bending vibration and the contour vibration that are secondary vibrations generated in the flat plate portion 321a can be suppressed, and as a result, the thickness-shear vibration that is the main vibration in the flat plate portion 321a is counter-axial. Inhibition of bending vibration and contour vibration, which are typical vibrations, can be reduced, and increase in equivalent series resistance due to inhibition of thickness shear vibration, which is the main vibration, can be reduced.

  In addition, by doing in this way, when the crystal piece 321 is viewed in plan, the number of side surfaces of the crystal piece 321 can be increased. Therefore, since the etching rate varies depending on the positional relationship with the crystal axes (X axis, Y ′ axis, Z ′ axis), the side surfaces of the fixed portion 321c and the main surface of the fixed portion 321c can be increased by increasing the number of side surfaces. The range of the angle formed between the side surface of the intermediate portion 321b and the upper surface of the intermediate portion 321b, or the angle formed between the side surface of the flat plate portion 321a and the main surface of the flat plate portion 321a can be widened. For this reason, the angle formed between the main surface of the crystal piece 321 and the side surface of the crystal piece 321 becomes steep and the metal pattern 323 can be prevented from being disconnected, and the equivalent series resistance value due to the disconnection can be reduced. Is possible.

  In addition, in this way, when the crystal piece 321 is formed in a crystal wafer shape, the distance between the flat plate portions 321a of the adjacent crystal pieces 321 and the distance between the fixed portions 321c of the adjacent crystal pieces 321 are set. The distance between the intermediate portions 321b of the adjacent crystal pieces 321 can be made longer. For this reason, the metal pattern 323 can be reliably formed on the side surface of the fixed portion 321c and the side surface of the flat plate portion 321a, and an increase in the equivalent series resistance value due to disconnection can be reduced.

  Accordingly, in such a crystal element 320, the length of the intermediate portion 321b is perpendicular to the direction in which the flat plate portion 321a, the intermediate portion 321b, and the fixed portion 321c are arranged in plan view of the crystal piece 321. It is longer than the length of the flat plate portion 321a. In other words, in the crystal element 320 according to the third embodiment, the length of the intermediate portion 321b in the second direction (Z′-axis direction) is longer than the length of the flat plate portion 321a in the second direction (Z′-axis direction). ing. For this reason, it can reduce that an equivalent series resistance value becomes large as mentioned above.

  Thus, by using the crystal element as shown in Examples 1 to 3 for the crystal device, it is possible to obtain a crystal device in which an increase in the equivalent series resistance value is reduced.

(Method for manufacturing crystal element)
A method for manufacturing a crystal element will be described. In the present embodiment, the case where the crystal element 120 shown in Example 1 is manufactured will be described. FIG. 11 is a flowchart showing a flow in manufacturing the crystal element 120 shown in the first embodiment.

  The manufacturing method of a crystal element includes a crystal wafer preparation process, a crystal wafer etching process, a metal pattern forming process, and an individualization process.

  The crystal wafer preparation step is a step of preparing a crystal wafer having the same thickness in the vertical direction as the fixing portion 121c of the crystal element 120. The quartz wafer has a crystal axis composed of an X axis, a Y axis, and a Z axis that are orthogonal to each other, and the vertical thickness thereof is the same as the vertical thickness of the fixed portion 121c.

The quartz wafer etching step is a step of etching the quartz wafer so as to form a portion that becomes the quartz piece 121 by using a photolithography technique and an etching technique. In the quartz wafer etching process, first, a corrosion resistant metal film is formed on both main surfaces of the quartz wafer, and a photosensitive resist is applied on the corrosion resistant metal film. Next, the quartz wafer coated with the photosensitive resist is developed into a predetermined pattern and exposed to expose a part of the corrosion-resistant metal film. Then, the exposed corrosion-resistant metal film is peeled off to expose a part of the quartz wafer. At this time, for example, when one main surface of the crystal wafer is viewed in plan, the upper surface portion of the crystal piece 121 is not exposed, and when the other main surface of the crystal wafer is viewed in plan,
The portions that become the vibrating portion 121a and the intermediate portion 121b are in a state where the quartz wafer is exposed. Thereafter, etching is performed until the portion to be the flat plate portion 121a has a predetermined thickness, and the photosensitive resist and the corrosion-resistant metal film are peeled off.

  The metal pattern forming step is a step of forming a predetermined metal pattern 123 in a portion that becomes the formed crystal piece 121. In the metal pattern forming process, for example, a photolithography technique and an etching technique are used. In the case of using the photolithography technique and the etching technique, metal films to be the metal patterns 123 are formed on both main surfaces of the quartz wafer on which a plurality of parts to be the quartz pieces 121 are formed. At this time, for example, a vapor deposition technique or a sputtering technique is used for the metal film. Thereafter, a photosensitive resist is applied on the metal film, developed and exposed, and a part of the metal film is exposed. By peeling off the exposed metal film and peeling off the photosensitive resist, a predetermined metal pattern 123 is provided in a portion that becomes the crystal piece 121. As another example, a sputtering technique or a vapor deposition technique is used in the metal pattern forming process.

  That is, in the metal pattern forming step, the crystal piece is deposited at a predetermined position by a sputtering technique or a vapor deposition technique. When the crystal element described in the first to third embodiments is manufactured, the metal pattern 123 can be reliably formed on the portion that becomes the side surface of the crystal piece 121, and the productivity can be improved.

  The singulation process is a process of dividing a portion that becomes the crystal piece 121 into pieces.

  Therefore, the manufacturing method of the crystal element according to the present embodiment includes a crystal wafer preparation step of preparing a crystal wafer having the same vertical thickness as that of the fixed portion 121c, and a crystal piece 121 using a photolithographic technique and an etching technique. A crystal wafer etching step for etching the crystal wafer so as to form a portion to be formed, a metal pattern forming step for forming a predetermined metal pattern 123 on a portion to be the formed crystal piece 121, and a portion to be the crystal piece 121 And an individualizing step for separating.

  By doing in this way, when manufacturing the crystal element which concerns on Example 1- Example 3, the metal pattern 123 can be reliably formed in the side surface of the crystal piece 121. FIG. Therefore, by manufacturing the crystal element according to the first to third embodiments, it is possible to reduce the disconnection on the side surface of the crystal piece 121 as compared with the case of manufacturing the conventional crystal element, and the productivity. Can be improved.

  The present invention is not limited to the above embodiment, and may be implemented in various forms.

  A device having a crystal element is not limited to a crystal resonator. For example, in addition to the crystal element, an oscillator having an integrated circuit element that generates an oscillation signal by applying a voltage to the crystal element may be used. For example, the quartz crystal device may be equipped with a thermostatic bath. For example, the substrate may have an H-shaped cross section having recesses on the upper surface and the lower surface, or may have a flat plate shape.

  The shape and dimensions of the crystal element are not limited to those exemplified in the embodiment, and may be set as appropriate. The shape of the excitation electrode part is not limited to a substantially rectangular shape in plan view, and may be, for example, an elliptical shape.

110 ... Base 110a ... Substrate part 110b ... Frame part 111 ... Mounting pad 112 ... Mounting terminals 120, 220, 320 ... Crystal elements 121, 221, 321 ... Crystal piece 121a 221a, 321a ... flat plate portion 121b, 221b, 321b ... intermediate portion 121c, 221c, 321c ... fixed portion 122, 222, 322 ... through hole 123, 223, 323 ... metal pattern 123a 223a, 323a ... excitation electrode portions 123b, 223b, 323b ... leading portions 131c, 223c, 323c ... wiring portions

Claims (7)

A substantially rectangular parallelepiped-shaped flat plate portion, a substantially rectangular parallelepiped fixing portion whose thickness in the vertical direction is thicker than the flat plate portion, and the flat plate portion to the fixing portion located between the flat plate portion and the fixing portion. A crystal piece consisting of an intermediate part whose thickness in the vertical direction gradually increases over time,
Excitation electrode portions provided on both main surfaces of the flat plate portion, an extraction portion provided on the lower surface of the fixed portion, and one end connected to the excitation electrode portion and the other end connected to the extraction portion A metal pattern consisting of wiring parts,
A crystal element comprising:
A through-hole penetrating in the vertical direction is formed in the intermediate portion,
A part of said metal pattern is provided in the inner wall surface of the through-hole currently formed in the side surface of the said crystal piece, and the said fixing | fixed part. The crystal element according to claim 1,
When the lower surface of the crystal piece is viewed in plan view,
The upper surface of the flat plate portion and the upper surface of the fixed portion are located on the same plane,
A crystal element, wherein a corner portion of the intermediate portion facing the flat plate portion side has an arc shape. The crystal element according to claim 1 or 2,
When the crystal piece is viewed in plan view,
With the upper surface of the flat plate portion and the upper surface of the fixed portion positioned on the same plane, the flat plate portion, the intermediate portion, and the fixed portion are arranged in this order,
A crystal element, wherein a notch is formed in the fixed part facing the side opposite to the flat plate part. The crystal element according to claim 1, wherein
In plan view of the crystal piece,
With the upper surface of the flat plate portion and the upper surface of the fixed portion positioned on the same plane, the flat plate portion, the intermediate portion, and the fixed portion are arranged in this order,
In a direction perpendicular to the direction in which the flat plate portion, the intermediate portion, and the fixed portion are arranged,
The crystal element, wherein the length of the intermediate portion is longer than the length of the fixed portion. The crystal element according to claim 4,
In plan view of the crystal piece,
In a direction perpendicular to the direction in which the flat plate portion, the intermediate portion, and the fixed portion are arranged,
The length of the said intermediate part is longer than the length of the said flat plate part, The crystal element characterized by the above-mentioned. The crystal element according to claim 1, and
A base on which the crystal element is mounted;
A lid joined to the substrate;
Crystal device characterized by comprising. A method for manufacturing a crystal element according to claim 1, wherein:
A crystal wafer preparation step of preparing a crystal wafer having the same thickness in the vertical direction as the fixed portion;
A crystal wafer etching step of etching the crystal wafer so as to form a portion to be the crystal piece using a photolithographic technique and an etching technique;
A metal pattern forming step of forming a predetermined metal pattern in a portion to be the crystal piece formed;
An individualization step for individualizing the portion to be the crystal piece,
A method for manufacturing a crystal element, comprising:

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