JP2013025139A - Electro-optic device and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optic device and electronic equipment having high transmittance for light transmitting through a pixel and capable of effectively using light emitting from a light source.SOLUTION: A liquid crystal device as an embodiment of the electro-optic device includes: an element substrate as a first substrate having a plurality of pixel electrodes; and a counter substrate 20 as a second substrate having a first light-transmitting conducting layer 23a, a second light-transmitting conducting layer 23c disposed in a first region E1 of the first light-transmitting conducting layer 23a, opposing to the plurality of pixel electrodes, and a first insulating film 23b disposed between the first light-transmitting conducting layer 23a and the second light-transmitting conducting layer 23c. Each film thickness of the first light-transmitting conducting layer 23a, the first insulating film 23b and the second light-transmitting conducting layer 23c is set in such a manner that the spectral distribution of light transmitting through the first region E1 of the counter substrate 20 is approximately flat in a wavelength range of visible light. The first light-transmitting conducting layer 23a is disposed in a second region E2 of the counter substrate 20 where a sealing material 40 for adhering the element substrate and the counter substrate 20 is provided.

Description

  The present invention relates to an electro-optical device and an electronic apparatus including the same.

  As the electro-optical device, for example, an active drive type liquid crystal device used as light modulation means (light valve) of a liquid crystal projector can be cited. A pixel of the liquid crystal device includes a pixel circuit including a pixel electrode, a transistor that controls switching of the pixel electrode, and a storage capacitor for holding an image signal written to the pixel electrode.

  In such a liquid crystal device, in order to realize a better display quality, for example, an attempt is made to increase the number of pixels. Increasing the number of pixels without changing the size of the liquid crystal device leads to higher definition of the pixels, and of course, how to secure a storage capacitor with a predetermined electric capacity as well as miniaturization of the transistor is a problem It has become.

In order to solve the above problems, a transparent conductive film provided on an upper layer of a transistor element, a dielectric layer formed on the transparent conductive film, and the transparent conductive film in an opening region through which light can be transmitted in the display region. An electro-optical device that includes a transparent capacitor electrode that forms a storage capacitor together with a film and the dielectric layer and is electrically connected to the transistor element is disclosed (Patent Document 1).
According to the electro-optical device, since the storage capacitor is configured in the opening region, a desired capacitance in the storage capacitor can be obtained even when the pixel becomes high-definition as compared with the case where the storage capacitor is formed in the non-opening region. Can be secured.

JP 2010-176119 A

  However, simply transposing the transparent conductive film and the pixel electrode with the light-transmitting dielectric layer interposed therebetween may not necessarily provide the desired transmittance in the pixel. In particular, the above-mentioned Patent Document 1 does not describe the influence on the transmittance of a substrate provided with a counter electrode facing a pixel electrode among a pair of substrates sandwiching a liquid crystal layer. In other words, there is a problem that it is necessary to consider the configuration of the substrate having the counter electrode in consideration of the transmittance of the pixel.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An electro-optical device according to this application example is an electro-optical device having an electro-optical material sandwiched between a first substrate and a second substrate, and the first substrate includes a plurality of pixel electrodes. And the second substrate includes a first light-transmitting conductive layer and a second light-transmitting conductive layer disposed in a first region facing the plurality of pixel electrodes of the first light-transmitting conductive layer. And a first insulating film disposed between the first translucent conductive layer and the second translucent conductive layer, and transmits light transmitted through the first region of the second substrate. The film thicknesses of the first translucent conductive layer, the first insulating film, and the second translucent conductive layer are set so that the spectral distribution is substantially flat in the visible light wavelength range. Features.

According to this configuration, when the spectral distribution of the light transmitted through the first region on the second substrate side facing the plurality of pixel electrodes is substantially flat in the visible light wavelength range, the first is substantially the first compared to the case where the light is not flat. The transmittance of light transmitted through the region, that is, the display region is improved. That is, an electro-optical device capable of bright display can be provided.
In the present specification, “the spectral distribution is substantially flat in the visible light wavelength range” includes that the transmittance of transmitted light is 90% or more in the visible light wavelength range (400 nm to 700 nm). . Moreover, it is preferable that the transmittance | permeability is 95% or more in a visible light wavelength range (400 nm-700 nm), and it is more preferable that it is 98% or more.

Application Example 2 In the electro-optical device according to the application example, the first light-transmitting conductive layer has a second region outside the first region, and transmits ultraviolet light that passes through the second region. The film thickness of the first light-transmitting conductive layer is set so as to be 85% or more.
According to this configuration, when the ultraviolet curable sealant is disposed in the second region outside the first region and the first substrate and the second substrate are joined, the second region of the second substrate is Since the transmittance of ultraviolet light is 85% or more, the sealing material can be sufficiently cured.
In other words, it is possible to achieve both bright display in the display area included in the first area and ensuring of the transmittance of ultraviolet light in the second area.
In the present specification, “ultraviolet light” refers to light having a wavelength of 350 nm or more and less than 400 nm.

  Application Example 3 Another electro-optical device according to this application example is an electro-optical device having an electro-optical material sandwiched between a first substrate and a second substrate, and the first substrate includes a plurality of electro-optical materials. A second light-transmitting conductive layer; and a second light-transmitting layer disposed in a first region of the first light-transmitting conductive layer facing the plurality of pixel electrodes. A conductive layer and a third translucent conductive layer; a first insulating film disposed between the first translucent conductive layer and the second translucent conductive layer; and the second translucent conductive layer. And a second insulating film disposed between the third translucent conductive layer and a spectral distribution of light transmitted through the first region of the second substrate is substantially in a visible light wavelength range. The thicknesses of the first light-transmitting conductive layer, the first insulating film, the second light-transmitting conductive layer, the second insulating film, and the third light-transmitting conductive layer are each set to be flat. Characterized in that it is set.

  According to this configuration, the spectral distribution in the visible light wavelength range is improved as compared with the case where the thin film laminated structure in the first region is the first light-transmitting conductive layer, the first insulating film, and the second light-transmitting conductive layer. A flatter state can be obtained. That is, an electro-optical device capable of displaying brighter can be provided.

Application Example 4 In another electro-optical device according to the application example described above, the first translucent conductive layer includes a second region outside the first region, and the second region includes the first region. The light-transmitting conductive layer, the second light-transmitting conductive layer, and the third light-transmitting conductive layer are sequentially stacked, and the transmittance of the ultraviolet light that passes through the second region of the second substrate is 85%. As described above, film thicknesses of the first light-transmitting conductive layer, the second light-transmitting conductive layer, and the third light-transmitting conductive layer are set.
According to this configuration, the first translucent conductive layer, the first insulating film, the second translucent conductive layer, the second insulating film, and the third translucent conductive layer from the first region to the second region. Compared with the case where the laminated structure is maintained, the transmittance of the ultraviolet light in the second region can be easily set to 85% or more.

Application Example 5 An electronic apparatus according to this application example includes the electro-optical device according to the application example.
According to this configuration, it is possible to provide an electronic device capable of displaying a bright and attractive display.

(A) is a schematic plan view which shows the structure of the liquid crystal device of 1st Embodiment, (b) is a schematic sectional drawing cut | disconnected by the H-H 'line | wire of (a). FIG. 2 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device according to the first embodiment. FIG. 2 is a schematic plan view showing the arrangement of pixels in the liquid crystal device of the first embodiment. FIG. 5A is a schematic plan view showing the arrangement of thin film transistors and signal lines in a pixel, and FIG. 5B is a schematic plan view showing the arrangement of a pair of translucent electrodes and pixel electrodes of a storage capacitor in the pixel. FIG. 5 is a schematic cross-sectional view illustrating the structure of a pixel cut along line A-A ′ in FIG. 4. FIG. 4 is a schematic cross-sectional view illustrating the structure of a pixel cut along line B-B ′ in FIG. 3. Schematic which shows the structure of the opposing board | substrate of the liquid crystal device in 1st Embodiment. Schematic which shows the structure of the opposing board | substrate in the liquid crystal device of 2nd Embodiment. The graph which shows the spectral distribution of the transmitted light in the opening area | region of an element substrate. (A) And (b) is a table | surface which shows the film thickness of the translucent conductive layer and insulating film in the counter substrate of an Example, (c) is the film thickness of the translucent conductive layer and insulating film in the counter substrate of a comparative example. Table showing. The graph which shows the spectral distribution of the transmitted light in the counter substrate of Examples 1-3 and the comparative example 1. FIG. The graph which shows the spectral distribution of the transmitted light in the counter substrate of Examples 4-6 and the comparative example 1. FIG. 6 is a graph showing the spectral distribution of transmitted light in the counter substrates of Example 4, Comparative Example 2, and Comparative Example 3. Schematic which shows the structure of the projection type display apparatus as an electronic device. The schematic sectional drawing which shows the structure of the element substrate in the liquid crystal device of a modification.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

(First embodiment)
<Liquid crystal device>
First, a liquid crystal device as an electro-optical device according to this embodiment will be described with reference to FIGS. 1 and 2. 1A is a schematic plan view showing the configuration of the liquid crystal device, FIG. 1B is a schematic cross-sectional view taken along line HH ′ of FIG. 1A, and FIG. 2 is an electrical configuration of the liquid crystal device. FIG.

  As shown in FIGS. 1A and 1B, a liquid crystal device 100 as an electro-optical device according to this embodiment includes an element substrate 10 as a first substrate and a counter substrate 20 as a second substrate, which are arranged to face each other. And a liquid crystal layer 50 as an electro-optical material sandwiched between the pair of substrates. The element substrate 10 and the counter substrate 20 are made of a transparent substrate such as a quartz substrate or a glass substrate.

The element substrate 10 is slightly larger than the counter substrate 20 and is bonded via a sealing material 40 disposed between the two substrates. An inlet is formed in the sealing material 40, and a liquid crystal layer 50 is configured by sealing liquid crystal having positive or negative dielectric anisotropy from the inlet, for example, by a vacuum injection method. The liquid crystal injection (filling) between the pair of substrates is not limited to the vacuum injection method. For example, the sealing material 40 is arranged in a frame shape on one of the pair of substrates, and a predetermined amount of liquid crystal is dropped inside the sealing material 40 on the bank under reduced pressure. And you may employ | adopt the ODF (One Drop Fill) system which bonds together one board | substrate and the other board | substrate under pressure reduction.
For the sealing material 40, for example, an adhesive such as a thermosetting or ultraviolet curable epoxy resin is employed. A spacer (not shown) is mixed in the sealing material 40 to keep the distance between the pair of substrates constant.

  A light shielding film 21 is similarly provided in a frame shape inside the sealing material 40 arranged in a frame shape. The light shielding film 21 is made of, for example, a light shielding metal or metal oxide, and the inside of the light shielding film 21 is a display region E. In the display area E, a plurality of pixels P are arranged in a matrix. The display area E may include a plurality of dummy pixels arranged so as to surround a plurality of effective pixels P that contribute to display. Although not shown in FIG. 1, the display area E is also provided with a light-shielding portion that divides a plurality of pixels P in a plane.

A data line driving circuit 101 is provided between the element substrate 10 and the sealing material 40 along one side. Further, an inspection circuit 103 is provided inside the sealing material 40 along the other one side facing the one side. Further, a scanning line driving circuit 102 is provided inside the sealing material 40 along the other two sides orthogonal to the one side and facing each other. A plurality of wirings 105 that connect the two scanning line driving circuits 102 are provided inside the sealing material 40 on the other side facing the one side. Wirings connected to the data line driving circuit 101 and the scanning line driving circuit 102 are connected to a plurality of external connection terminals 104 arranged along the one side.
Hereinafter, the direction along the one side will be referred to as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other will be described as the Y direction.

As shown in FIG. 1B, on the surface of the element substrate 10 on the liquid crystal layer 50 side, a light-transmitting pixel electrode 15 provided for each pixel P and a thin film transistor (TFT; Thin Film) as a switching element. Transistor (hereinafter also referred to as TFT) 30, a signal wiring, and an alignment film 18 that covers the plurality of pixel electrodes 15 are formed.
Further, a light shielding structure is employed that prevents light from entering the semiconductor layer in the TFT 30 and causing a light leakage current to flow, resulting in an inappropriate switching operation.

  On the surface of the counter substrate 20 on the liquid crystal layer 50 side, a light shielding film 21, an interlayer insulating film 22 formed so as to cover the light shielding film 21, and an interlayer insulating film 22 covering at least the display region E are provided. The counter electrode 23 and an alignment film 24 covering the counter electrode 23 are provided.

  As shown in FIG. 1A, the light shielding film 21 is provided in a frame shape at a position where the data line driving circuit 101, the scanning line driving circuit 102, and the inspection circuit 103 overlap in plan view. Thus, the light incident from the counter substrate 20 side is shielded, and the malfunction of the peripheral circuits including these drive circuits due to the light is prevented. Further, unnecessary stray light is shielded from entering the display area E, and high contrast in the display of the display area E is ensured.

  The interlayer insulating film 22 is made of an inorganic material such as silicon oxide, for example, and is provided so as to cover the light shielding film 21 with light transmittance. In addition, the interlayer insulating film 22 also functions as a planarizing layer that relaxes unevenness generated on the substrate by the light shielding film 21. As a method for forming the interlayer insulating film 22, for example, a method of forming a film using a plasma CVD method or the like can be given.

  The counter electrode 23 is made of, for example, a transparent conductive film (translucent conductive layer) such as ITO, covers the interlayer insulating film 22, and is vertically conductive provided at the four corners of the counter substrate 20 as shown in FIG. The portion 106 is electrically connected to the wiring on the element substrate 10 side.

  The alignment film 18 that covers the pixel electrode 15 and the alignment film 24 that covers the counter electrode 23 are selected based on the optical design of the liquid crystal device 100. For example, by depositing an organic material such as polyimide and rubbing the surface, liquid crystal molecules having positive dielectric anisotropy are subjected to a substantially horizontal alignment treatment, or SiOx (silicon oxide) Inorganic materials such as those described above are formed by vapor deposition, and liquid crystal molecules having negative dielectric anisotropy are subjected to a substantially vertical alignment treatment.

  As shown in FIG. 2, the liquid crystal device 100 includes a plurality of scanning lines 3 a and a plurality of data lines 6 a as signal lines that are insulated and orthogonal to each other at least in the display region E, and capacitance lines parallel to the scanning lines 3 a. 3b.

  A pixel electrode 15, a TFT 30, and a storage capacitor 16 are provided in a region divided by the scanning line 3a and the data line 6a, and these constitute a pixel circuit of the pixel P.

The scanning line 3 a is electrically connected to the gate of the TFT 30, and the data line 6 a is electrically connected to the source of the TFT 30. The pixel electrode 15 is electrically connected to the drain of the TFT 30.
The data line 6a is connected to the data line driving circuit 101 (see FIG. 1), and supplies image signals D1, D2,..., Dn supplied from the data line driving circuit 101 to the pixels P. The scanning line 3a is connected to a scanning line driving circuit 102 (see FIG. 1), and supplies scanning signals SC1, SC2,..., SCm supplied from the scanning line driving circuit 102 to each pixel P. The image signals D1 to Dn supplied from the data line driving circuit 101 to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each of a plurality of adjacent data lines 6a for each group. Good. The scanning line driving circuit 102 supplies the scanning signals SC1 to SCm to the scanning line 3a in a pulse-sequential manner at a predetermined timing.

In the liquid crystal device 100, the TFT 30 that is a switching element is turned on for a certain period by the input of the scanning signals SC1 to SCm, so that the image signals D1 to Dn supplied from the data line 6a are supplied to the pixel electrode 15 at a predetermined timing. It is the structure written in. The predetermined level of image signals D1 to Dn written to the liquid crystal layer 50 through the pixel electrode 15 are held for a certain period between the pixel electrode 15 and the counter electrode 23 arranged to face each other through the liquid crystal layer 50. The
In order to prevent the retained image signals D1 to Dn from leaking, a storage capacitor 16 is connected in parallel with a liquid crystal capacitor formed between the pixel electrode 15 and the counter electrode 23. The storage capacitor 16 is provided between the drain of the TFT 30 and the capacitor line 3b. As will be described in detail later, in the present embodiment, one of the pair of translucent electrodes constituting the storage capacitor 16 functions as the capacitor line 3b.

  Note that a data line 6a is connected to the inspection circuit 103 shown in FIG. 1A, and an operation defect or the like of the liquid crystal device 100 is confirmed by detecting the image signal in the manufacturing process of the liquid crystal device 100. Although it can be configured, it is omitted in the equivalent circuit of FIG. The inspection circuit 103 includes a sampling circuit that samples the image signal and supplies it to the data line 6a, and a precharge circuit that supplies a precharge signal of a predetermined voltage level to the data line 6a prior to the image signal. Also good.

  Such a liquid crystal device 100 is a transmission type, and adopts an optical design of a normally black mode in which a dark display is obtained when the pixel P is not driven and a normally white mode in which a bright display is obtained when the pixel P is not driven. Depending on the optical design, polarizing elements are respectively used on the light incident side and the light exit side.

  Next, the planar arrangement and structure of the pixel P will be described with reference to FIGS. 3 is a schematic plan view showing the arrangement of pixels in the liquid crystal device, FIG. 4A is a schematic plan view showing the arrangement of thin film transistors and signal lines in the pixels, and FIG. 3B is a pair of transparent capacitors of the storage capacitors in the pixels. 5 is a schematic plan view showing the arrangement of the photoelectrode and the pixel electrode, FIG. 5 is a schematic sectional view showing the structure of the pixel cut along the line AA ′ in FIG. 4, and FIG. 6 is cut along the line BB ′ in FIG. It is a schematic sectional drawing which shows the structure of another pixel.

  As shown in FIG. 3, the pixel P in the liquid crystal device 100 has, for example, a substantially quadrangular (substantially square) opening region in plan view. The opening area is surrounded by a light-shielding non-opening area extending in the X direction and the Y direction and provided in a lattice shape.

  A scanning line 3a shown in FIG. 2 is provided in the non-opening region extending in the X direction. The scanning line 3a uses a light-shielding conductive member, and at least a part of the non-opening region is constituted by the scanning line 3a.

  Similarly, a data line 6a shown in FIG. 2 is provided in the non-opening region extending in the Y direction. The data line 6a also uses a light-shielding conductive member, and at least a part of the non-opening region is constituted by these.

  The non-opening region is formed not only by the signal lines provided on the element substrate 10 side, but also by a light shielding film 21 patterned in a lattice pattern on the counter substrate 20 side.

  The TFT 30 shown in FIG. 2 is provided near the intersection of the non-opening regions. By providing the TFT 30 in the vicinity of the intersection of the non-opening region having the light shielding property, the optical malfunction of the TFT 30 is prevented and the aperture ratio in the opening region is secured. Although the detailed structure of the pixel P will be described later, the width of the non-opening region in the vicinity of the intersecting portion is wider than that in other portions due to the provision of the TFT 30 near the intersecting portion.

Next, each component such as a thin film transistor in the pixel circuit of the pixel P will be described with reference to FIGS.
As shown in FIG. 4, the pixel P includes a TFT 30 provided at the intersection of the scanning line 3a and the data line 6a. The TFT 30 includes a data line side source / drain region 30s, a channel region 30c, a pixel electrode side source / drain region 30d, and a junction region 30e provided between the data line side source / drain region 30s and the channel region 30c. And a semiconductor layer 30a having an LDD (Lightly Doped Drain) structure having a junction region 30f provided between the channel region 30c and the pixel electrode side source / drain region 30d. The semiconductor layer 30a is disposed so as to pass through the intersection and overlap the scanning line 3a.

  The scanning line 3a has a quadrangular extended portion in a plan view extended in the X and Y directions at the intersection with the data line 6a. A bent gate electrode 30g having an opening that overlaps the extension portion in a plan view and that does not overlap the junction region 30f and the pixel electrode side source / drain region 30d is provided.

  In the gate electrode 30g, the portion extending in the Y direction overlaps the channel region 30c in a plane. Further, the scanning lines 3a and CNT4 are bent by contact holes CNT3 and CNT4 that are bent from the portion overlapping the channel region 30c and extend in the X direction, and the portions facing each other are provided between the extended portions of the scanning line 3a. Electrically connected.

  The contact holes CNT3 and CNT4 are rectangular (rectangular) having a long X direction in plan view, and are provided on both sides so as to sandwich the junction region 30f along the channel region 30c and the junction region 30f of the semiconductor layer 30a. Yes.

The data line 6a extends in the Y direction and also has a rectangular extension at the intersection with the scanning line 3a, and is formed by a contact hole CNT1 provided in the protrusion 6c protruding from the extension in the X direction. It is electrically connected to the data line side source / drain region 30s. A portion including the contact hole CNT1 is a source electrode 31. On the other hand, the contact hole CNT2 is also provided at the end of the pixel electrode side source / drain region 30d, and the portion including the contact hole CNT2 serves as the drain electrode 32.
Contact holes CNT6, CNT5, and CNT7 are provided adjacent to the contact hole CNT2 in the extending direction (X direction) of the scanning line 3a. The contact hole CNT2 and the contact hole CNT5 are electrically connected via a first relay electrode 6b provided in an island shape. The contact hole CNT6 and the contact hole CNT7 are electrically connected via the second relay electrode 7b provided in the same island shape.

As shown in FIG. 4B, the pixel electrode 15 is arranged so as to overlap the above-described opening region (see FIG. 3) in a plan view and the outer edge portion covers the non-opening region (see FIG. 3). Further, the pixel electrode 15 has a protrusion 15a for electrical connection with the contact hole CNT7. That is, the pixel electrode 15 has a substantially rectangular (substantially square) island shape provided for each pixel P.
The storage capacitor 16 has a first electrode 16a and a second electrode 16c as a pair of translucent electrodes. The first electrode 16a is provided for each pixel P so as to overlap the pixel electrode 15 in the above-described opening region (see FIG. 3). The first electrode 16a has a protruding portion 16aa for electrical connection with the contact hole CNT6. That is, the first electrode 16 a has a substantially quadrangular (substantially square) island shape like the pixel electrode 15.

  On the other hand, the second electrode 16c is provided so as to straddle a plurality of pixels P arranged in a matrix in the X direction and the Y direction. In addition, the contact hole CNT6 to which the first electrode 16a is electrically connected and the contact hole CNT7 to which the pixel electrode 15 is electrically connected and the second electrode 16c are provided with an opening 16ch which is opened. ing. That is, the second electrode 16 c is provided so as to extend over the display area E, and has the function of the capacitance line 3 b common to the plurality of pixels P. A part of the second electrode 16c is drawn to the outside of the display region E and is electrically connected to a wiring to which a fixed potential is supplied.

  As shown in FIG. 5, the scanning line 3 a is first formed on the element substrate 10. The scanning line 3a also serves as a light-shielding film that shields the semiconductor layer 30a. For example, the scanning line 3a includes a metal simple substance including at least one of metals such as Al, Ti, Cr, W, Ta, and Mo, an alloy, a metal silicide, and a polycrystal. Silicide, nitride, or a laminate of these can be used and has light shielding properties.

  A base insulating film 10a made of, for example, silicon oxide is formed so as to cover the scanning line 3a, and a semiconductor layer 30a is formed in an island shape on the base insulating film 10a. The semiconductor layer 30a is made of, for example, a polycrystalline silicon film, and is implanted with impurity ions, and the data line side source / drain region 30s, the junction region 30e, the channel region 30c, the junction region 30f, and the pixel electrode side source / drain region 30d described above. An LDD structure having is formed.

  A first insulating film (gate insulating film) 11a made of, for example, silicon oxide is formed so as to cover the semiconductor layer 30a. Further, a gate electrode 30g is formed at a position facing the channel region 30c with the first insulating film 11a interposed therebetween. The gate electrode 30g can be formed using, for example, a polycrystalline silicon film, and at the same time, the scanning line 3a (expanded portion) and the gate electrode 30g are electrically passed through the base insulating film 10a and the first insulating film 11a. Contact holes CNT3 and CNT4 (not shown) to be connected are also formed.

  A second insulating film 11b made of, for example, silicon oxide is formed so as to cover the gate electrode 30g and the first insulating film 11a. A contact hole CNT1 penetrating through the first insulating film 11a and the second insulating film 11b overlapping the data line side source / drain region 30s of the semiconductor layer 30a is formed. Similarly, a contact hole CNT2 penetrating the first insulating film 11a and the second insulating film 11b overlapping the pixel electrode side source / drain region 30d of the semiconductor layer 30a is formed. Subsequently, a conductive film made of a light-shielding metal such as Al is formed and patterned so as to cover the second insulating film 11b, whereby the data line side source / drain region 30s is electrically connected to the data line side source / drain region 30s via the contact hole CNT1. Connected data lines 6a are formed. At the same time, the first relay electrode 6b electrically connected to the pixel electrode side source / drain region 30d through the contact hole CNT2 is formed.

  Subsequently, a first interlayer insulating film 12 is formed so as to cover the data line 6a and the first relay electrode 6b. The first interlayer insulating film 12 is made of, for example, silicon oxide, nitride, or oxynitride, and is subjected to a flattening process for flattening the surface unevenness caused by covering the region where the TFT 30 is provided. Examples of the planarization method include chemical mechanical polishing (CMP) and spin coating.

A contact hole CNT5 penetrating the first interlayer insulating film 12 is formed at a position overlapping the first relay electrode 6b. A conductive film made of a light-shielding metal such as Al is formed so as to cover the contact hole CNT5 and cover the first interlayer insulating film 12, and the wiring 7a and the contact hole CNT5 are formed by patterning the conductive film. And a second relay electrode 7b electrically connected to the first relay electrode 6b.
The wiring 7a is formed so as to overlap with the semiconductor layer 30a and the data line 6a of the TFT 30 in a plan view, and functions as a shield layer when given a fixed potential.

  A second interlayer insulating film 13 is formed so as to cover the wiring 7a and the second relay electrode 7b. The second interlayer insulating film 13 can also be formed using, for example, silicon oxide, nitride, or oxynitride, and is subjected to a planarization process such as a CMP process.

  Next, a contact hole CNT6 that penetrates through the second interlayer insulating film 13 is formed at a position overlapping the second relay electrode 7b. A transparent conductive film such as ITO is formed so as to cover the contact hole CNT6 and the second interlayer insulating film 13, and the first electrode 16a having the protruding portion 16aa is formed by patterning the transparent conductive film. The The first electrode 16a is electrically connected to the second relay electrode 7b through the protrusion 16aa and the contact hole CNT6.

A dielectric layer 16b is formed on at least a portion of the first electrode 16a facing the second electrode 16c. As the dielectric layer 16b, a silicon nitride film, a single layer film such as humic oxide (HfO ₂ ), alumina (Al ₂ O ₃ ), tantalum oxide (Ta ₂ O ₅ ), or at least one of these single layer films is used. A multilayer film in which two types of single-layer films are stacked can be used. The thickness is set to 20 nm to 30 nm in consideration of electric capacity. The dielectric layer 16b is such an extremely thin thin film and has high transparency to visible light.

A transparent conductive film such as ITO is formed so as to cover the dielectric layer 16b, and the second electrode 16c functioning as the capacitor line 3b is formed by patterning the transparent conductive film. The second electrode 16c is formed so as to cover the surface including the side surface of the patterned dielectric layer 16b. Further, as described above, it is formed over the display region E including at least a plurality of pixels P, and the opening 16ch is formed in a portion overlapping the second relay electrode 7b in a plan view.
As a result, the first electrode 16a and the second electrode 16c are arranged to face each other with the dielectric layer 16b interposed therebetween, so that a translucent storage capacitor 16 is formed.

  A third interlayer insulating film 14 is formed to cover the storage capacitor 16. The third interlayer insulating film 14 can also be formed using, for example, silicon oxide, and may be subjected to a planarization process such as a CMP process. In addition, chemically stable boron is prevented so that the third interlayer insulating film 14 is not altered and the film thickness does not change in the formation process of the pixel electrode 15 that is subsequently formed by photolithography. It is preferable to cover with a silicon oxide film doped with. That is, the third interlayer insulating film 14 is composed of the first silicon oxide film on the storage capacitor 16 side and the second silicon oxide film laminated on the first silicon oxide film and doped with boron.

  Next, a contact hole CNT7 penetrating through the second interlayer insulating film 13 and the third interlayer insulating film 14 is formed at a position overlapping the second relay electrode 7b. A transparent conductive film such as ITO is formed to cover the contact hole CNT7 and cover the third interlayer insulating film 14, and by patterning this, the second relay electrode 7b is electrically connected to the contact hole CNT7. A pixel electrode 15 to be connected is formed.

  According to such a wiring structure of the element substrate 10, the drain electrode 32 of the TFT 30 is electrically connected to the pixel electrode 15 through the first relay electrode 6b, the contact hole CNT5, the second relay electrode 7b, and the contact hole CNT7. Is done. The first relay electrode 6b, the contact hole CNT5, the second relay electrode 7b, and the contact hole CNT6 are electrically connected to the first electrode 16a of the storage capacitor 16.

  As shown in FIG. 6, in the opening region of the pixel P, a base insulating film 10 a, a first insulating film 11 a, a second insulating film 11 b, and a first interlayer insulating film 12 are sequentially formed on the transparent element substrate 10. A second interlayer insulating film 13, a light-transmitting storage capacitor 16, a third interlayer insulating film 14, and a pixel electrode 15 are provided.

The insulating films such as the base insulating film 10a, the first insulating film 11a, the second insulating film 11b, the first interlayer insulating film 12, and the second interlayer insulating film 13 in the element substrate 10 are made of silicon oxide (oxidized oxide) as described above. Since it is made of a silicon film) or a nitride or oxynitride, it has substantially the same refractive index (1.4 to 1.5 in the visible light region) as that of, for example, a quartz substrate constituting the element substrate 10. Therefore, since the refractive indexes are almost the same, the visible light transmitted through these layers (films) hardly reflects or refracts at the interface of the layers (films). Rate) is difficult to attenuate.
On the other hand, the structure from the storage capacitor 16 to the pixel electrode 15 has a first electrode 16a and a second electrode made of a transparent conductive film (if ITO, the refractive index is 1.5 to 1.9 in the visible light wavelength region). The dielectric layer 16b is sandwiched between the pixel electrode 16c and the third interlayer insulating film 14 is sandwiched between the pixel electrode 15 and the second electrode 16c, which is also made of a transparent conductive film. In other words, since the dielectric layer 16b and the third interlayer insulating film 14 having different (low) refractive index from the transparent conductive film are sandwiched between the transparent conductive films, the layers (films) are transmitted. The visible light that is reflected may be reflected or refracted at the interface of the layer (film), and the light intensity (transmittance) may be attenuated. The dielectric layer 16b has a thickness of 20 nm to 30 nm from the viewpoint of securing electric capacity as described above. In this film thickness range, it hardly affects the light transmittance in the aperture region, and can be ignored.

  In the present embodiment, the spectral distribution of light (transmitted light) transmitted through the opening region of the element substrate 10 has at least a red wavelength range (600 nm to 700 nm), a green wavelength range (500 nm to 600 nm), and a blue wavelength range ( Each film of the pixel electrode 15, the first electrode 16a and the second electrode 16c as a pair of translucent electrodes, and the third interlayer insulating film 14 so as to have a transmittance peak corresponding to 400 nm to 500 nm) The thickness is set. Specifically, the pixel electrode 15, the first electrode 16a, and the second electrode 16c are all formed using an ITO film so as to have a film thickness of 140 nm. The third interlayer insulating film 14 includes a first silicon oxide film and a second silicon oxide film doped with boron, and is formed to have a film thickness of 175 nm.

  The counter substrate 20 disposed opposite to the element substrate 10 with the liquid crystal layer 50 interposed therebetween has a structure in which a light-transmitting conductive layer and an insulating film are stacked in addition to the light shielding film 21 and the interlayer insulating film 22 described above. The film thicknesses of the light-transmitting conductive layer and the insulating film are such that the spectral distribution of light (transmitted light) transmitted through the display region E is substantially flat in the visible light wavelength range (400 nm to 700 nm). Are set respectively. Hereinafter, a specific configuration of the counter substrate 20 will be described with reference to FIG.

  FIG. 7 is a schematic diagram illustrating the configuration of the counter substrate of the liquid crystal device according to the first embodiment. In FIG. 7, illustration of the light shielding film 21 and the interlayer insulating film 22 provided on the counter substrate 20 is omitted. As shown in FIG. 7, the counter substrate 20 has a first region E1 and a second region E2 provided so as to surround the first region E1. The first region E1 is a portion facing the region where the plurality of pixel electrodes 15 in the element substrate 10 are arranged in a matrix. That is, the first area E1 includes at least the display area E. The second region E2 surrounding the first region E1 includes a region where the sealing material 40 is disposed.

On the side of the counter substrate 20 facing the liquid crystal layer 50, a first translucent conductive layer 23a made of a transparent conductive film such as ITO is provided across the first region E1 and the second region E2. The first translucent conductive layer 23a is provided so as to cover the interlayer insulating film 22 (see FIG. 1B). A light-transmitting first insulating film 23b made of, for example, a silicon oxide film is provided in the first region E1 of the first light-transmitting conductive layer 23a. In addition, a second light-transmissive conductive layer 23c made of a transparent conductive film such as ITO is laminated on the first insulating film 23b. The second light transmissive conductive layer 23c is electrically connected to the first light transmissive conductive layer 23a through a connection portion such as a contact hole in the first region E1. Therefore, the stacked body 23F including the first light-transmitting conductive layer 23a and the second light-transmitting conductive layer 23c arranged to face each other with the first insulating film 23b interposed therebetween is substantially the counter electrode 23 (FIG. 1B). Reference).
The alignment film 24 is provided so as to cover the first light-transmissive conductive layer 23a and the second light-transmissive conductive layer 23c across the first region E1 and the second region E2. Although not shown in detail in FIG. 7, the alignment film 24 also covers the side surface portion of the stacked body 23F.

  In this way, by arranging the laminated body 23F in which the light-transmitting conductive layer and the insulating film having different refractive indexes are stacked in the first region E1, compared to the case where only the first light-transmitting conductive layer 23a is provided. The transmittance in the visible light wavelength range of the light transmitted through the first region E1 can be increased by the light interference action of the thin film. On the other hand, by leaving the first light-transmissive conductive layer 23a in the second region E2 and without the first insulating film 23b and the second light-transmissive conductive layer 23c, the first region E1 is compared with the first region E1. The transmittance of ultraviolet light in the two regions E2 can be increased.

According to the above embodiment, the following effects can be obtained.
(1) The element substrate 10 has a translucent storage capacitor 16 and a pixel electrode 15 in the opening region of the pixel P, and the spectral distribution of light transmitted through the opening region is in each wavelength range of at least red, green, and blue. The film thicknesses of the pixel electrode 15, the first electrode 16a and the second electrode 16c as a pair of translucent electrodes, and the third interlayer insulating film 14 are set so as to have a transmittance peak corresponding to Yes. In addition, the counter substrate 20 disposed opposite to the element substrate 10 with the liquid crystal layer 50 interposed therebetween has a three-layer structure in which a light-transmitting conductive layer and an insulating film having different refractive indexes in the first region E1 are sequentially stacked. The laminated body 23F is provided. The first light-transmitting conductive layer 23a, the first insulating film 23b, and the second light-transmitting conductive layer 23c are formed so that the spectral distribution in the visible light wavelength region of the light transmitted through the first region E1 is substantially flat. Each film thickness is set. Therefore, it is possible to provide the liquid crystal device 100 that includes a plurality of pixels P with high transmittance of transmitted light, increases the utilization efficiency of light emitted from the light source, and enables bright display.
(2) In the second region E2 surrounding the first region E1 of the counter substrate 20, the first light-transmitting conductive layer 23a is left, and the first insulating film 23b and the second light-transmitting conductive layer 23c are not present. It has become. As a result, the transmittance of the ultraviolet light in the second region E2 is higher than that in the first region E1, so that even if the ultraviolet curable sealing material 40 is disposed in the second region E2, for example, it is sufficiently cured. Can be made.

(Second Embodiment)
Next, a liquid crystal device according to a second embodiment will be described with reference to FIG. In the liquid crystal device of the second embodiment, the configuration of the counter substrate 20 is different from that of the first embodiment. Therefore, the same components as those of the liquid crystal device 100 of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted. FIG. 8 is a schematic view showing the configuration of the counter substrate in the liquid crystal device of the second embodiment.

  As shown in FIG. 8, the counter substrate 20 in the second embodiment includes a first region E1 and a second region E2 surrounding the first region E1, as in the first embodiment. The first region E1 is a portion facing the region where the plurality of pixel electrodes 15 in the element substrate 10 are arranged in a matrix. That is, the first area E1 includes at least the display area E.

On the side of the counter substrate 20 facing the liquid crystal layer 50, a first translucent conductive layer 23a made of a transparent conductive film such as ITO is provided across the first region E1 and the second region E2. A light-transmitting first insulating film 23b made of, for example, a silicon oxide film is provided in the first region E1 of the first light-transmitting conductive layer 23a. Further, for the first insulating film 23b, a second light-transmissive conductive layer 23c made of a transparent conductive film such as ITO, a second insulating film 23d made of a silicon oxide film, and a transparent conductive film such as ITO, for example. The third translucent conductive layer 23e is sequentially laminated.
In the second region E2 surrounding the first region E1, a stacked body 23h in which the first light-transmitting conductive layer 23a, the second light-transmitting conductive layer 23c, and the third light-transmitting conductive layer 23e are sequentially stacked is disposed. ing.
The second light-transmissive conductive layer 23c and the third light-transmissive conductive layer 23e are electrically connected to the first light-transmissive conductive layer 23a through a connection portion such as a contact hole in the first region E1. . Therefore, a stacked body 23G including the first light-transmitting conductive layer 23a, the first insulating film 23b, the second light-transmitting conductive layer 23c, the second insulating film 23d, and the third light-transmitting conductive layer 23e that are sequentially stacked. And the laminate 23h substantially function as the counter electrode 23 (see FIG. 1B).
The alignment film 24 is provided so as to cover the third translucent conductive layer 23e across the first region E1 and the second region E2. Although not shown in detail in FIG. 8, the alignment film 24 is provided so as to cover the side surfaces of the stacked body 23G and the stacked body 23h.
The first light-transmitting conductive layer 23a, the first insulating film 23b, and the second light-transmitting property are set so that the spectral distribution in the visible light wavelength region of the light transmitted through the first region E1 of the counter substrate 20 is substantially flat. The film thicknesses of the conductive layer 23c, the second insulating film 23d, and the third translucent conductive layer 23e are set.

According to the above embodiment, the following effects can be obtained.
(1) Only the first light-transmitting conductive layer 23a is provided by disposing the light-transmitting conductive layer having a refractive index different from the refractive index and the laminated body 23G having an insulating film sequentially stacked in the first region E1. Compared with the first embodiment or compared with the first embodiment, the transmittance of light transmitted through the first region E1 can be further increased by the light interference action of the thin film. On the other hand, in the second region E2, the stacked body 23h in which the first light-transmitting conductive layer 23a, the second light-transmitting conductive layer 23c, and the third light-transmitting conductive layer 23e are sequentially stacked is left, and the first insulation is left. By eliminating the film 23b and the second insulating film 23d, it is possible to increase the transmittance of the ultraviolet light in the second region E2 as compared with the first region E1. That is, even if the ultraviolet curable sealing material 40 is disposed in the second region E2, for example, it can be sufficiently cured.

  Hereinafter, specific examples and comparative examples will be described. FIG. 9 is a graph showing the spectral distribution of transmitted light in the opening region of the element substrate, and FIGS. 10A and 10B are tables showing the film thicknesses of the light-transmitting conductive layer and the insulating film in the counter substrate of the example. FIG. 11C is a table showing the thickness of the light-transmitting conductive layer and the insulating film on the counter substrate of the comparative example, and FIG. 11 is a graph showing the spectral distribution of the transmitted light on the counter substrate of Examples 1 to 3 and Comparative Example 1. 12 is a graph showing the spectral distribution of transmitted light in the counter substrates of Examples 4 to 6 and Comparative Example 1, and FIG. 13 is the spectral distribution of transmitted light in the counter substrates of Example 4, Comparative Example 2, and Comparative Example 3. It is a graph to show.

  As shown in FIG. 9, the spectral distribution of the transmitted light in the opening region of the element substrate 10 is at least a red wavelength range (600 nm to 700 nm), a green wavelength range (500 nm to 600 nm), and a blue wavelength range (400 nm to 500 nm). ) Each have a transmittance peak. In other words, the film thicknesses of the first electrode 16a, the second electrode 16c, and the pixel electrode 15 made of the ITO film of the storage capacitor 16 are each set to 140 nm so as to have the transmittance peak, and the second electrode 16c and the pixel are formed. The film thickness of the third interlayer insulating film 14 between the electrodes 15 is set to 175 nm. A dielectric layer 16b is also provided between the first electrode 16a and the second electrode 16c. Therefore, a transparent conductive film (translucent conductive layer) having a different refractive index and an insulating film are sequentially laminated in the opening region, and high transmission over the visible light wavelength range is achieved by the light interference action of the thin film. The rate is obtained. In the spectral distribution in FIG. 9, the vertical axis is indexed with the transmittance peak in the red wavelength range (600 nm to 700 nm) as “1”.

Hereinafter, with reference to FIGS. 10A to 10C, the light-transmitting conductive layers and the insulating films of Examples 1 to 6 and Comparative Examples 1 to 3 in the counter substrate 20 will be described. In Examples 1 to 6 and Comparative Examples 1 to 3, the counter substrate 20 is provided with an inorganic alignment film 24 made of silicon oxide (SiO ₂ ), and the thickness thereof is set to 75 nm. Has been.
Example 1
In Example 1, the first light-transmissive conductive layer 23a, the first insulating film 23b, and the second light-transmissive conductive layer 23c are sequentially stacked in the first region E1. The first translucent conductive layer 23a and the second translucent conductive layer 23c are made of an ITO film, and the film thickness is set to 20 nm. The first insulating film 23b is made of a silicon oxide film and has a thickness of 80 nm.
In the second region E2 surrounding the first region E1, the first light-transmissive conductive layer 23a is disposed.

(Example 2)
In Example 2, the first light-transmitting conductive layer 23a, the first insulating film 23b, and the second light-transmitting conductive layer 23c are made thinner by 10% than in Example 1. That is, the film thickness of each of the first light transmissive conductive layer 23a and the second light transmissive conductive layer 23c is set to 18 nm. The first insulating film 23b has a thickness of 72 nm.

(Example 3)
In Example 3, the thickness of the first light-transmissive conductive layer 23a, the first insulating film 23b, and the second light-transmissive conductive layer 23c is increased by 10% with respect to the first example. That is, the first translucent conductive layer 23a and the second translucent conductive layer 23c are each set to a film thickness of 22 nm. The first insulating film 23b has a thickness of 88 nm.

Example 4
In Example 4, the first light-transmitting conductive layer 23a, the first insulating film 23b, the second light-transmitting conductive layer 23c, the second insulating film 23d, and the third light-transmitting conductive layer 23e are sequentially formed in the first region E1. Are stacked. The first translucent conductive layer 23a and the third translucent conductive layer 23e are made of an ITO film, and the film thickness is set to 20 nm. The second translucent conductive layer 23c is made of an ITO film and has a thickness of 40 nm. The first insulating film 23b and the second insulating film 23d are made of a silicon oxide film, and each film thickness is set to 50 nm.
In the second region E2 surrounding the first region E1, the first light-transmitting conductive layer 23a, the second light-transmitting conductive layer 23c, and the third light-transmitting conductive layer 23e are disposed. That is, the film thickness of the stacked body 23h is 80 nm.

(Example 5)
Example 5 is different from Example 4 in that the first light-transmitting conductive layer 23a, the first insulating film 23b, the second light-transmitting conductive layer 23c, the second insulating film 23d, and the third light-transmitting conductive layer 23e. Each film thickness is 10% thinner. That is, the first translucent conductive layer 23a and the third translucent conductive layer 23e are each set to a thickness of 18 nm. The film thickness of the second translucent conductive layer 23c is set to 36 nm. The first insulating film 23b and the second insulating film 23d are each set to a film thickness of 45 nm.
In the second region E2 surrounding the first region E1, the first light-transmitting conductive layer 23a, the second light-transmitting conductive layer 23c, and the third light-transmitting conductive layer 23e are disposed. That is, the film thickness of the stacked body 23h is 72 nm.

(Example 6)
Example 6 is different from Example 4 in that the first light-transmissive conductive layer 23a, the first insulating film 23b, the second light-transmissive conductive layer 23c, the second insulating film 23d, and the third light-transmissive conductive layer 23e. Each film thickness is increased by 10%. That is, the first light-transmissive conductive layer 23a and the third light-transmissive conductive layer 23e are each set to a film thickness of 22 nm. The film thickness of the second light transmissive conductive layer 23c is set to 44 nm. The first insulating film 23b and the second insulating film 23d are each set to a thickness of 55 nm.
In the second region E2 surrounding the first region E1, the first light-transmitting conductive layer 23a, the second light-transmitting conductive layer 23c, and the third light-transmitting conductive layer 23e are disposed. That is, the film thickness of the stacked body 23h is 88 nm.

(Comparative Example 1)
In Comparative Example 1, the first translucent conductive layer 23a made of an ITO film is disposed over the first region E1 and the second region E2, and the film thickness is set to 140 nm.

(Comparative Example 2)
In Comparative Example 2, the first light-transmitting conductive layer 23a, the first insulating film 23b, the second light-transmitting conductive layer 23c, the second insulating film 23d, and the third light-transmitting conductive layer 23e are sequentially formed in the first region E1. Are stacked. The first translucent conductive layer 23a and the third translucent conductive layer 23e are made of an ITO film, and the film thickness is set to 40 nm. The second translucent conductive layer 23c is made of an ITO film and has a thickness of 80 nm. The first insulating film 23b and the second insulating film 23d are made of a silicon oxide film, and each film thickness is set to 50 nm. In the second region E2 surrounding the first region E1, the first light-transmissive conductive layer 23a is disposed. That is, Comparative Example 2 is different from Example 4 in the film thicknesses of the first light-transmissive conductive layer 23a, the second light-transmissive conductive layer 23c, and the third light-transmissive conductive layer 23e in the first region E1, respectively. In this case, only the first translucent conductive layer 23a is arranged in the second region E2.

(Comparative Example 3)
In Comparative Example 3, compared with Comparative Example 2, the film thicknesses of the first translucent conductive layer 23a, the second translucent conductive layer 23c, and the third translucent conductive layer 23e made of an ITO film are set to 140 nm, respectively. It is a thing. In the second region E2 surrounding the first region E1, the first light-transmissive conductive layer 23a is disposed.

  Examples 1 to 3 are examples corresponding to the first embodiment, and Examples 4 to 6 are examples corresponding to the second embodiment. Comparative example 1 is a comparative example to be compared with Examples 1 to 3 of the first embodiment. Comparative Example 2 and Comparative Example 3 are comparative examples to be compared with Examples 4 to 6 of the second embodiment.

  Hereinafter, for Examples 1 to 6 and Comparative Examples 1 to 3, the spectral distribution of transmitted light in the first region E1 and the second region E2 was obtained by optical simulation. The spectral distribution graphs shown in FIG. 11 to FIG. 13 are obtained by indexing the transmittance peak value in the red wavelength range (600 nm to 700 nm) in Comparative Example 1 as “1”. The optical simulation for obtaining the spectral distribution of the transmitted light is compared with the results obtained by actually measuring the spectral characteristics of the samples (prototypes) corresponding to the film thickness configurations of the examples and comparative examples. The validity of the simulation results has been confirmed.

  As shown in FIG. 11, the spectral distribution of the light transmitted through the first region E1 of Example 1 shows a numerical value with a transmittance of 90% or more in the visible light wavelength range (400 nm to 700 nm), and a range of 500 nm to 700 nm. Therefore, the transmittance is stable at a value of 99% or more, and is almost flat. On the other hand, in the ultraviolet wavelength range (350 nm or more and less than 400 nm) in the first region E1 of Example 1, the transmittance sharply decreases. By the way, at 350 nm, the transmittance is less than 75%. In contrast, the spectral distribution of the light transmitted through the second region E2 of Example 1 has a lower transmittance than the first region E1 in the visible light wavelength range (400 nm to 700 nm), but the ultraviolet wavelength range ( 350 nm or more and less than 400 nm), the transmittance exceeds 85%, which is higher than that of the first region E1.

  In Example 2, in which the thickness of each of the light-transmitting conductive layer and the insulating film is 10% thinner than that in Example 1, the spectral distribution of light transmitted through the first region E1 is in the visible light wavelength range (400 nm to 700 nm). , The transmittance is a numerical value of 95% or more, which is a flatter state than Example 1. In the ultraviolet light wavelength range (350 nm or more and less than 400 nm) in the first region E1 of Example 2, the transmittance is drastically reduced as in Example 1. In contrast, the spectral distribution of the light transmitted through the second region E2 of Example 2 has a lower transmittance than the first region E1 in the visible light wavelength range (400 nm to 700 nm), but the ultraviolet wavelength range ( 350 nm or more and less than 400 nm), the transmittance exceeds 90%, which is higher than that of the first region E1.

In Example 3, in which the thickness of each of the light-transmitting conductive layer and the insulating film is 10% thicker than that in Example 1, the spectral distribution of light transmitted through the first region E1 is in the visible light wavelength range (400 nm to 700 nm). However, in the wavelength range of 500 nm to 700 nm, the transmittance shows a numerical value of 98% or more, and is in a flat state. In the ultraviolet wavelength range (350 nm or more and less than 400 nm) in the first region E1 of Example 3, the transmittance is drastically reduced as in Example 1. On the other hand, the spectral distribution of the light transmitted through the second region E2 of Example 3 has a lower transmittance than the first region E1 in the visible light wavelength range (400 nm to 700 nm), but the ultraviolet wavelength range ( 350 nm or more and less than 400 nm), the transmittance exceeds 85%, which is higher than that of the first region E1.
The third embodiment uses the liquid crystal device 100 as a liquid crystal light valve in a projection display device to be described later, although the transmittance of light in the wavelength range of 400 nm to 450 nm in the first region E1 is lower than that in the first embodiment. In this case, light having a wavelength of, for example, less than 430 nm including an ultraviolet wavelength range (350 nm or more and less than 400 nm) is cut and used in consideration of light resistance, so that it can be said that there is no problem in practical use.

  On the other hand, in Comparative Example 1 in which the first light-transmissive conductive layer 23a having a film thickness of 140 nm is disposed in the first region E1 and the second region E2, the spectral distribution of light transmitted through the first region E1 and the second region E2 is In the visible light wavelength range (400 nm to 700 nm), although the transmittance shows a numerical value of 85% or more, the transmittance is slightly lower than in Examples 1 to 3 in the red wavelength range (600 nm to 700 nm). doing. Moreover, the transmittance | permeability has fallen compared with Example 1 or Example 2 in the blue wavelength range (400 nm-500 nm). That is, in Comparative Example 1, the spectral distribution greatly fluctuates in the visible light wavelength range (400 nm to 700 nm) as compared with Examples 1 to 3, and it is difficult to say that the state is almost flat.

  According to Examples 1 to 3 to which the stacked body 23F in the counter substrate 20 of the first embodiment is applied, the film thickness of the first light-transmissive conductive layer 23a and the second light-transmissive conductive layer 23c is set to 20 nm. Then, after setting the film thickness of the first insulating film 23b to 80 nm and forming the stacked body 23F within a range of ± 10% with respect to the set value of each film thickness, the visible light wavelength range of the first region E1 The spectral distribution at (400 nm to 700 nm) can be made almost flat. Moreover, the transmittance | permeability of the ultraviolet light wavelength range (350 nm or more and less than 400 nm) of 2nd area | region E2 can be 85% or more.

  As shown in FIG. 12, in Example 5 in which the thickness of each thin film of the laminated body 23G is 10% thinner than in Example 4 and Example 4, the spectral distribution of the light transmitted through the first region E1 is visible. In the optical wavelength range (400 nm to 700 nm), the transmittance is a numerical value of 98% or more, and it is in a stable and flat state. On the other hand, in the ultraviolet light wavelength range (350 nm or more and less than 400 nm) in the spectral distribution, the transmittance is rapidly decreased. On the other hand, the spectral distribution of the light transmitted through the second region E2 of Example 4 and Example 5 is lower than that of the first region E1 in the visible light wavelength range (400 nm to 700 nm). In the light wavelength range (350 nm or more and less than 400 nm), the transmittance is higher than 90%, which is higher than those of Examples 1 to 3.

Further, in Example 6 in which the thickness of each thin film of the stacked body 23G is 10% thicker than that in Example 4, the spectral distribution of light transmitted through the first region E1 is in the visible light wavelength range (400 nm to 700 nm). Although the transmittance on the short wavelength side is slightly lower than those in Example 4 and Example 5, it shows a value of 98% or more in the wavelength range of 430 nm to 700 nm, is stable, and is in a flat state. In the ultraviolet light wavelength range (350 nm or more and less than 400 nm) in the spectral distribution, the transmittance is rapidly decreased. On the other hand, the spectral distribution of the light transmitted through the second region E2 of Example 6 is less than the first region E1 in the visible light wavelength range (400 nm to 700 nm), but the ultraviolet wavelength range (350 nm to 400 nm). Less), the transmittance is higher than 90% and higher than those of the fourth and fifth embodiments.
Therefore, Examples 4-6 are the wavelength range of 400 nm-700 nm in 1st area | region E1, The comparative example 1 can obtain the light transmittance higher than Examples 1-3 from the first. Moreover, in the 2nd area | region E2, the transmittance | permeability of the light higher than the Examples 1-3 is originally obtained in the comparative example 1 in the ultraviolet light wavelength area | region of 350 to 400 nm.

  As shown in FIG. 13, a comparative example in which the film thicknesses of the first light-transmissive conductive layer 23a, the second light-transmissive conductive layer 23c, and the third light-transmissive conductive layer 23e are doubled with respect to the fourth embodiment. 2, in the spectral distribution of the first region E1, the transmittance is stable at 98% or more in the visible light wavelength range of 550 nm to 700 nm, but the transmittance is drastically decreased in the wavelength range of less than 550 nm. . In the spectral distribution of the second region E2 of Comparative Example 2, there is a portion where the transmittance in the ultraviolet wavelength range (350 nm or more and less than 400 nm) is less than 85%.

In contrast to Example 4, in Comparative Example 3 in which the film thicknesses of the first light transmissive conductive layer 23a, the second light transmissive conductive layer 23c, and the third light transmissive conductive layer 23e were set to 140 nm, In the spectral distribution of one region E1, a transmittance of 90% or more is obtained in the blue to green wavelength range (400 nm to 600 nm) in the visible light wavelength range, but in the red wavelength range (600 nm to 700 nm), the example The transmittance is lower than 4 and is not stable. In the spectral distribution of the second region E2 of Comparative Example 3, the transmittance in the ultraviolet wavelength range (350 nm or more and less than 400 nm) is less than 85%.
That is, Comparative Example 2 and Comparative Example 3 are in an unstable state because the transmittance of transmitted light of 350 nm to 700 nm in the first region E1 and the second region E2 is lower than that in Example 4.

  According to Examples 4 to 6 in which the stacked body 23G in the counter substrate 20 of the second embodiment is applied, the film thickness of the first light-transmissive conductive layer 23a and the third light-transmissive conductive layer 23e is set to 20 nm. The film thickness of the second light-transmitting conductive layer 23c is set to 40 nm, the film thicknesses of the first insulating film 23b and the second insulating film 23d are set to 50 nm, and each film thickness setting is ± If the stacked body 23G and the stacked body 23h are formed in the range of 10%, the spectral distribution in the visible light wavelength range (400 nm to 700 nm) of the first region E1 can be made flat. Further, the transmittance of the second region E2 in the ultraviolet light wavelength range (350 nm or more and less than 400 nm) can be set to 90% or more.

(Third embodiment)
<Electronic equipment>
FIG. 14 is a schematic diagram illustrating a configuration of a projection display device as an electronic apparatus. As shown in FIG. 14, a projection display apparatus 1000 as an electronic apparatus according to the present embodiment includes a polarization illumination apparatus 1100 arranged along the system optical axis L, and two dichroic mirrors 1104 and 1105 as light separation elements. Three reflection mirrors 1106, 1107, 1108, five relay lenses 1201, 1202, 1203, 1204, 1205, three transmissive liquid crystal light valves 1210, 1220, 1230 as light modulation means, and a light combining element As a cross dichroic prism 1206 and a projection lens 1207.

  The polarized light illumination device 1100 is generally configured by a lamp unit 1101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 1102, and a polarization conversion element 1103.

  The dichroic mirror 1104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 1100. Another dichroic mirror 1105 reflects the green light (G) transmitted through the dichroic mirror 1104 and transmits the blue light (B).

The red light (R) reflected by the dichroic mirror 1104 is reflected by the reflection mirror 1106 and then enters the liquid crystal light valve 1210 via the relay lens 1205.
Green light (G) reflected by the dichroic mirror 1105 enters the liquid crystal light valve 1220 via the relay lens 1204.
The blue light (B) transmitted through the dichroic mirror 1105 enters the liquid crystal light valve 1230 via a light guide system including three relay lenses 1201, 1202, 1203 and two reflection mirrors 1107, 1108.

  The liquid crystal light valves 1210, 1220, and 1230 are disposed to face the incident surfaces of the cross dichroic prism 1206 for each color light. The color light incident on the liquid crystal light valves 1210, 1220, and 1230 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 1206. In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected on the screen 1300 by the projection lens 1207 which is a projection optical system, and the image is enlarged and displayed.

  The liquid crystal light valve 1210 is one to which the liquid crystal device of the first embodiment or the second embodiment described above is applied. The liquid crystal device is arranged with a gap between a pair of polarizing elements arranged in crossed Nicols on the incident side and the emission side of colored light. The same applies to the other liquid crystal light valves 1220 and 1230.

  According to such a projection type display device 1000, the liquid crystal device having a high transmittance of transmitted light in the display region E of the element substrate 10 and the counter substrate 20 is used as the liquid crystal light valves 1210, 1220, 1230. Bright display quality is realized by effectively using light emitted from the lighting device 1100.

  Further, the fact that a high transmittance can be obtained in the display region E of the element substrate 10 and the counter substrate 20 means that the reflectance of light transmitted through the display region E is lowered. Then, since the probability that the reflected light is transmitted again through the liquid crystal layer 50 is reduced, the light resistance lifetime (for example, the liquid crystal layer 50 and the alignment films 18 and 24 of the liquid crystal layer 50 and the alignment films 18 and 24) is used. (Light degradation) is improved.

Of the polarized light beams emitted from the polarization illumination device 1100 as the light source, the pixel P is compared with the peak wavelength of the light intensity in the spectral distribution of red light (R), green light (G), and blue light (B). The film thickness and the range of the first electrode 16a, the second electrode 16c, the pixel electrode 15, and the third interlayer insulating film 14 in the liquid crystal device are set so that the peak wavelengths of the transmittance of light transmitted through And preferably used. According to this, the light utilization efficiency can be further enhanced. Note that “substantially match” refers to a state in which the peak of the transmittance of the color light transmitted through the pixel P appears in a wavelength range within ± 5% with respect to the peak wavelength of the light intensity of the color light emitted from the light source.
Further, for example, when the spectral distribution of blue light (B) is cut from ultraviolet light having a wavelength shorter than 430 nm to be 430 nm to 500 nm and the light resistance lifetime of the liquid crystal device is further improved, the wavelength range (430 nm to 430 nm The film thickness and the range of the first electrode 16a, the second electrode 16c, the pixel electrode 15, and the third interlayer insulating film 14 are set so that the transmittance peak comes at 500 nm.

The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the gist or concept of the invention that can be read from the claims and the entire specification. Electronic equipment to which the liquid crystal device is applied is also included in the technical scope of the present invention.
Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.

(Modification 1) The structure of the element substrate 10 in the liquid crystal device to which the counter substrate 20 of the first embodiment and the second embodiment is applied is not limited to this. FIG. 15 is a schematic cross-sectional view showing the structure of an element substrate in a liquid crystal device according to a modification. Specifically, it is a cross-sectional view taken along line BB ′ shown in FIG. For example, as shown in FIG. 15, in the non-opening region of the element substrate 10, a storage capacitor 60 including a pair of electrodes 60 a and 60 c with a dielectric layer 60 b sandwiched between the data lines 6 a may be provided. In this case, for example, the pixel electrode 15 is formed using an ITO film, and the film thickness is set to 140 nm or 20 nm. Thereby, the spectral distribution of the transmitted light in the visible light wavelength range (400 nm to 700 nm) in the first region E1 can be almost the same as the spectral distribution of Comparative Example 1 shown in FIG. Although the transmittance in the visible light wavelength range (400 nm to 700 nm) is reduced as compared with the spectral distribution of the element substrate 10 shown in FIG. 9, the above-described Patent Document 1 is applied by applying the configuration of the counter substrate 20 in the present invention. A higher light transmittance in the display region E than that of the electro-optical device can be realized. Moreover, the high transmittance | permeability of the ultraviolet light in 2nd area | region E2 can be obtained.
Furthermore, the liquid crystal device to which the counter substrate 20 of the first embodiment and the second embodiment can be applied is not limited to the transmissive type, and the pixel electrode 15 in FIG. The present invention is also applicable to a reflective liquid crystal device formed using a metal material having In the reflective liquid crystal device, the light reflectance of the pixel (the ratio of the intensity of the reflected light from the pixel to the incident light on the pixel) can be improved.

  (Modification 2) The configuration of the counter substrate 20 of the first embodiment and the second embodiment is not limited to this. For example, the laminated structure of the light-transmitting conductive layer and the insulating film in the first region E1 is not limited to the three-layer structure of the first embodiment or the five-layer structure of the second embodiment, and further has a different refractive index. A multilayer structure in which a conductive conductive layer and an insulating film are stacked may be employed.

  (Modification 3) The alignment films 18 and 24 in the liquid crystal devices of the first embodiment and the second embodiment are not limited to inorganic alignment films made of silicon oxide. The present invention can also be applied using an organic alignment film made of polyimide resin or the like. Further, the alignment films 18 and 24 may not be disposed in the second region E2 where the sealing material 40 is disposed. In particular, when an organic alignment film is used, depending on the material selection of the sealing material 40, it may be more excellent in adhesion and adhesion to an adherend when the organic alignment film is not provided in the second region E2.

  (Modification 4) The first electrode 16a and the second electrode 16c, which are a pair of translucent electrodes of the storage capacitor 16 in the element substrate 10, and the pixel electrode 15 are not limited to using an ITO film as a transparent conductive film. IZO (Indium Zinc Oxide) may be used. Similarly, the first light-transmitting conductive layer 23a, the second light-transmitting conductive layer 23c, and the third light-transmitting conductive layer 23e in the counter substrate 20 are not limited to using the ITO film, and IZO (Indium Zinc Oxide). May be used. Moreover, it is not limited to forming all the translucent conductive layers by the same transparent conductive film, You may form at least 1 translucent conductive layer using a different transparent conductive film.

  (Modification 5) The first insulating film 23b and the second insulating film 23d of the counter substrate 20 are not limited to being silicon oxide films, and may be silicon oxynitride films.

  (Modification 6) The semiconductor layer 30a of the TFT 30 in the liquid crystal device is not limited to be disposed so as to overlap the scanning line 3a. For example, even if the semiconductor layer 30a is arranged so as to overlap with the data line 6a, and the semiconductor layer 30a is bent so as to overlap the scanning line 3a and the data line 6a, the storage capacitor 16 in the element substrate 10, the third interlayer insulating film 14, The configuration of the pixel electrode 15 can be applied.

  (Modification 7) The electro-optical device to which the present invention is applicable is not limited to a liquid crystal device. For example, a functional layer including a light emitting layer is provided on the pixel electrode 15 of the element substrate 10, and the present invention can be applied to a top emission type organic EL (electroluminescence) device that emits light from the functional layer on the side opposite to the element substrate 10. it can. Specifically, a configuration in which the counter electrode 20 of the counter substrate 20 is used as a cathode, the counter substrate 20 is disposed so as to cover the functional layer of the element substrate 10, and the counter substrate 20 is used as a sealing substrate.

  (Modification 8) The electronic apparatus to which the liquid crystal device 100 is applied is not limited to the projection display device 1000 of the above embodiment. For example, projection-type HUD (head-up display), direct-view type HMD (head-mounted display), electronic book, personal computer, digital still camera, LCD TV, viewfinder type or monitor direct-view type video recorder, car navigation system It can be suitably used as a display unit of an information terminal device such as an electronic notebook or POS. In application, the transmittance of light transmitted through the pixel P with respect to at least the peak wavelengths of the light intensities of red, green, and blue in the spectral distribution of the light of the light source that illuminates the transmissive liquid crystal device of the above embodiment. It is preferable to set and use the thicknesses and ranges of the first electrode 16a, the second electrode 16c, the pixel electrode 15, and the third interlayer insulating film 14 so that these peaks are matched.

  DESCRIPTION OF SYMBOLS 10 ... Element substrate as 1st substrate, 15 ... Pixel electrode, 20 ... Counter substrate as 2nd substrate, 23 ... Counter electrode, 23a ... 1st translucent conductive layer, 23b ... 1st insulating film, 23c ... 1st substrate Two translucent conductive layers, 23d ... second insulating film, 23e ... third translucent conductive layer, 24 ... alignment film, 50 ... liquid crystal layer as electro-optical material, 100 ... liquid crystal device, 1000 ... electronic device Projection type display device, E ... display area, E1 ... first area, E2 ... second area.

Claims (5)

An electro-optical device having an electro-optical material sandwiched between a first substrate and a second substrate,
The first substrate has a plurality of pixel electrodes,
The second substrate includes a first translucent conductive layer,
A second light transmissive conductive layer disposed in a first region facing the plurality of pixel electrodes of the first light transmissive conductive layer;
A first insulating film disposed between the first light transmissive conductive layer and the second light transmissive conductive layer;
The first light transmissive conductive layer, the first insulating film, and the second light transmissive so that a spectral distribution of light transmitted through the first region of the second substrate is substantially flat in a visible light wavelength range. An electro-optical device in which the thickness of each conductive conductive layer is set. The first translucent conductive layer has a second region outside the first region,
2. The electro-optic according to claim 1, wherein the film thickness of the first light-transmitting conductive layer is set so that the transmittance of the ultraviolet light transmitted through the second region is 85% or more. apparatus. An electro-optical device having an electro-optical material sandwiched between a first substrate and a second substrate,
The first substrate has a plurality of pixel electrodes,
The second substrate includes a first translucent conductive layer,
A second light-transmitting conductive layer and a third light-transmitting conductive layer disposed in a first region facing the plurality of pixel electrodes of the first light-transmitting conductive layer;
A first insulating film disposed between the first light-transmissive conductive layer and the second light-transmissive conductive layer;
A second insulating film disposed between the second translucent conductive layer and the third translucent conductive layer,
The first light transmissive conductive layer, the first insulating film, and the second light transmissive so that a spectral distribution of light transmitted through the first region of the second substrate is substantially flat in a visible light wavelength range. An electro-optical device, wherein film thicknesses of the conductive conductive layer, the second insulating film, and the third light-transmitting conductive layer are set. The first translucent conductive layer has a second region outside the first region,
In the second region, the first translucent conductive layer, the second translucent conductive layer, and the third translucent conductive layer are sequentially laminated,
The first translucent conductive layer, the second translucent conductive layer, and the third translucency so that the transmittance of ultraviolet light transmitted through the second region of the second substrate is 85% or more. The electro-optical device according to claim 3, wherein the thickness of each conductive layer is set.   An electronic apparatus comprising the electro-optical device according to claim 1.

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