JP2013016553A - 結晶太陽電池の製造方法 - Google Patents
結晶太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000000137 annealing Methods 0.000 claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 238000006243 chemical reaction Methods 0.000 claims abstract description 40
- 150000002500 ions Chemical class 0.000 claims description 88
- 238000000034 method Methods 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000002513 implantation Methods 0.000 description 27
- 238000005468 ion implantation Methods 0.000 description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- -1 Oxygen ions Chemical class 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- 230000001568 sexual effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
【解決手段】光を受光する受光面と受光面と対向する裏面との間で光電変換機能を発現する結晶基板を具備する結晶太陽電池100の製造方法であって、結晶基板として、p型の単結晶又は多結晶シリコンからなる平板状の基体101を用い、基体101の一方の主面101a側に、p型のイオンを注入して、p型半導体層102を形成する第一工程と、基体101の他方の主面101b側に、n型のイオンを注入して、n型半導体層103を形成する第二工程と、基体101に対して、ランプを用いたアニール処理を行う第三工程と、を順に少なくとも備えている。
【選択図】図1
Description
図1は、第一実施形態に係る結晶太陽電池の構成について説明する図である。結晶太陽電池100は、光を受光する受光面と、受光面と対向する裏面との間で光電変換機能を発現する結晶基板101を備えた太陽電池である。結晶基板101は、p型の単結晶または多結晶シリコンからなる平板状の基体である。
図1に示した、第一実施形態に係る結晶太陽電池100の製造方法について、説明する。図2(a)および図2(b)は、それぞれ結晶太陽電池100を製造する、従来の工程フローおよび第一実施形態に係る工程フローを示している。
上述の製造方法により製造される、結晶太陽電池100および結晶太陽電池用の基体101を用いた実験例について、説明する。
102・・・p型半導体層、103・・・n型半導体層、
104・・・窒化膜。
Claims (5)
- 光を受光する受光面と該受光面と対向する裏面との間で光電変換機能を発現する結晶基板を具備する結晶太陽電池の製造方法であって、
前記結晶基板として、p型の単結晶又は多結晶シリコンからなる平板状の基体を用い、
前記基体の一方の主面側に、p型のイオンを注入して、p型半導体層を形成する第一工程と、
前記基体の他方の主面側に、n型のイオンを注入して、n型半導体層を形成する第二工程と、
前記基体に対して、ランプを用いたアニール処理を行う第三工程と、を順に少なくとも備えている、ことを特徴とする結晶太陽電池の製造方法。 - 次いで、前記基体の二つの主面に、新たに酸化膜または窒化膜を形成する第五工程を備えている、ことを特徴とする請求項1に記載の結晶太陽電池の製造方法。
- 前記アニール処理を行う時間は5秒以上20秒以下である、ことを特徴とする請求項1または2に記載の結晶太陽電池の製造方法。
- 前記アニール処理の温度は1050℃以上1150℃以下である、ことを特徴とする請求項1〜3のいずれか一項に記載の結晶太陽電池の製造方法。
- 前記第一工程において、前記基体の二つの主面にテクスチャーを形成したものを用いる、ことを特徴とする請求項1〜4のいずれか一項に記載の結晶太陽電池の製造方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5655039A (en) * | 1979-10-12 | 1981-05-15 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS62165373A (ja) * | 1986-01-16 | 1987-07-21 | Sharp Corp | 太陽電池の製造方法 |
JP2001237196A (ja) * | 2000-02-24 | 2001-08-31 | Nec Corp | ランプアニール装置 |
US20090032091A1 (en) * | 2007-08-03 | 2009-02-05 | Gigastorage Corporation | Solar cell |
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- 2011-06-30 JP JP2011146554A patent/JP5965110B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5655039A (en) * | 1979-10-12 | 1981-05-15 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS62165373A (ja) * | 1986-01-16 | 1987-07-21 | Sharp Corp | 太陽電池の製造方法 |
JP2001237196A (ja) * | 2000-02-24 | 2001-08-31 | Nec Corp | ランプアニール装置 |
US20090032091A1 (en) * | 2007-08-03 | 2009-02-05 | Gigastorage Corporation | Solar cell |
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