JP2013004944A - 太陽電池、及び太陽電池の製造方法 - Google Patents
太陽電池、及び太陽電池の製造方法 Download PDFInfo
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- JP2013004944A JP2013004944A JP2011138048A JP2011138048A JP2013004944A JP 2013004944 A JP2013004944 A JP 2013004944A JP 2011138048 A JP2011138048 A JP 2011138048A JP 2011138048 A JP2011138048 A JP 2011138048A JP 2013004944 A JP2013004944 A JP 2013004944A
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 94
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 94
- 239000010703 silicon Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 238000002161 passivation Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】シリコン基板2の受光面及びシリコン基板の裏面にそれぞれ形成された凹凸形状6,10を有し、シリコン基板の平面積をS、シリコン基板の裏面の凹凸形状の表面積をXとして、表面積比Y=X/Sとしたとき、表面積比Yが1.05以上1.15以下である太陽電池である。
【選択図】図1
Description
表面積比Y = X / S
としたとき、表面積比Yが1.05以上1.15以下である。
なお、裏面凹凸形状10の表面積の測定は、レーザ顕微鏡(波長:408nm)を用い、測定器として、OLYMPUS社製のLEXT OLS3000を用いた。また、p型シリコン基板2の裏面において、n型半導体層のみを除去し、S1工程で形成したテクスチャ構造が残った条件を比較例1とした。比較例1の場合の表面積比Yは、1.41である。さらに、p型シリコン基板2の裏面において、テクスチャ構造が形成されていない状態を比較例2とした。比較例2の場合の表面積比Yは、1.00である。
Claims (5)
- 第1導電型のシリコン基板と、
前記シリコン基板の受光面に形成された第2導電型の半導体層と、
前記シリコン基板の受光面及び前記シリコン基板の裏面にそれぞれ形成された凹凸形状と、
前記シリコン基板の受光面の一部に形成された受光面電極と、
前記シリコン基板の裏面の一部に形成された裏面電極とを有し、
前記シリコン基板の平面積をS、前記シリコン基板の裏面の凹凸形状の表面積をXとして、
表面積比Y = X / S
としたとき、
表面積比Yが1.05以上1.15以下である太陽電池。 - 前記シリコン基板の裏面の凹凸形状は、前記シリコン基板の受光面の凹凸形状よりも小さい請求項1に記載の太陽電池。
- 前記裏面電極は、アルミニウムで形成された請求項1または2に記載の太陽電池。
- 第1導電型のシリコン基板にテクスチャ構造を形成する第1工程と、
前記シリコン基板に第2導電型のドーパントを熱拡散させることで第2導電型半導体層を形成する第2工程と、
前記シリコン基板の裏面をエッチングする第3工程とを備え、
前記第3工程において、
前記シリコン基板の裏面の凹凸形状を、前記テクスチャ構造の凹凸形状より小さくする太陽電池の製造方法。 - 前記エッチングに用いるエッチング液は、フッ酸:硝酸=1:5である請求項4に記載の太陽電池の製造方法。
Priority Applications (2)
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JP2011138048A JP5715509B2 (ja) | 2011-06-22 | 2011-06-22 | 太陽電池、及び太陽電池の製造方法 |
PCT/JP2012/065863 WO2012176838A1 (ja) | 2011-06-22 | 2012-06-21 | 太陽電池および太陽電池の製造方法 |
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JP2011138048A JP5715509B2 (ja) | 2011-06-22 | 2011-06-22 | 太陽電池、及び太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013004944A true JP2013004944A (ja) | 2013-01-07 |
JP5715509B2 JP5715509B2 (ja) | 2015-05-07 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014239150A (ja) * | 2013-06-07 | 2014-12-18 | 信越化学工業株式会社 | 太陽電池および太陽電池モジュール |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004235274A (ja) * | 2003-01-28 | 2004-08-19 | Kyocera Corp | 多結晶シリコン基板およびその粗面化法 |
WO2005117138A1 (ja) * | 2004-05-28 | 2005-12-08 | Sharp Kabushiki Kaisha | 太陽電池用半導体基板とその製造方法および太陽電池 |
JP2010278401A (ja) * | 2009-06-01 | 2010-12-09 | Sharp Corp | シリコンシート、太陽電池およびその製造方法 |
JP2011009247A (ja) * | 2009-06-23 | 2011-01-13 | Sharp Corp | 太陽電池の製造方法及び湿式エッチング装置 |
-
2011
- 2011-06-22 JP JP2011138048A patent/JP5715509B2/ja not_active Ceased
-
2012
- 2012-06-21 WO PCT/JP2012/065863 patent/WO2012176838A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004235274A (ja) * | 2003-01-28 | 2004-08-19 | Kyocera Corp | 多結晶シリコン基板およびその粗面化法 |
WO2005117138A1 (ja) * | 2004-05-28 | 2005-12-08 | Sharp Kabushiki Kaisha | 太陽電池用半導体基板とその製造方法および太陽電池 |
JP2010278401A (ja) * | 2009-06-01 | 2010-12-09 | Sharp Corp | シリコンシート、太陽電池およびその製造方法 |
JP2011009247A (ja) * | 2009-06-23 | 2011-01-13 | Sharp Corp | 太陽電池の製造方法及び湿式エッチング装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014239150A (ja) * | 2013-06-07 | 2014-12-18 | 信越化学工業株式会社 | 太陽電池および太陽電池モジュール |
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WO2012176838A1 (ja) | 2012-12-27 |
JP5715509B2 (ja) | 2015-05-07 |
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