JP2013004188A - Organic el device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic EL device capable of preventing deterioration in display quality and occurrence of a pixel defect due to gas generated from an organic flattening layer, and a method for manufacturing the organic EL device.SOLUTION: In the organic EL device, a gas barrier layer 53 is formed on a flattening layer 41, and a through hole 46 penetrating through an inorganic partition wall 43 to reach the flattening layer 41 is formed in the gas barrier layer 53 and the inorganic partition wall 43.

Description

  The present invention relates to an organic EL device and an electronic apparatus.

  DESCRIPTION OF RELATED ART Conventionally, the organic EL apparatus provided with many organic EL (electroluminescence) elements on the board | substrate is known (patent documents 1, 2). The organic EL element includes a planarization layer that covers TFTs (thin film transistors) and wirings formed on a substrate, an electrode (anode) formed on the planarization layer, and a pixel opening that partitions the electrodes. , A functional layer formed in a pixel opening of the partition, and an electrode (cathode) formed to cover the functional layer. In particular, when a functional layer such as an organic light emitting layer is formed of a liquid phase material, the liquid phase material of the functional layer is disposed in the pixel opening of the partition wall and then dried.

  In such an organic EL element, in a manufacturing process, a planarization layer formed of an organic material is exposed to a processing liquid such as a resist stripping liquid used in a photolithography method. The planarization layer contains a large amount of impurities that generate gas, such as a solvent remaining inside. Therefore, the substance contained in the treatment liquid acts on the impurities in the planarization layer to generate gas.

  For example, in Patent Document 3, in order to discharge such gas to the outside without accumulating inside the flattening layer, a through hole is formed between the flattening layer and the partition wall, and the gas component is passed through the through hole. There is disclosed a method for ensuring the display quality by suppressing the generation of dark spots by discharging to the outside.

Japanese Patent No. 3328297 JP 2003-123988 A JP 2009-187898 A

  However, in the organic EL device described in Patent Document 3, not all gas components contained in the planarization layer are necessarily discharged to the outside through the through holes, and the pixel electrode directly above the planarization layer. In the case of being emitted to the outside through the gas, there is a problem that the light emission characteristic of the organic EL element is deteriorated by the gas component adhering to the surface of the pixel electrode or diffusing into the functional layer including the organic light emitting layer. In addition, when a gas component is released to the outside through the pixel electrode, the film of the pixel electrode is physically destroyed, resulting in a pixel defect and lowering the display quality.

  Such pixel defects grow with time even after the manufacture of the organic EL device, and there is a possibility that a region including a plurality of pixels becomes a non-light emitting region.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An organic EL device according to this application example includes a substrate, an organic planarization layer formed on the substrate, a gas barrier layer formed on the organic planarization layer, and the gas barrier layer. A first electrode formed; a partition wall formed with a pixel opening exposing an upper portion of the first electrode; a functional layer including at least an organic light emitting layer provided in the pixel opening; and the functional layer covering the functional layer. And the partition includes a first partition and a second partition stacked on the first partition, and reaches the gas barrier layer through the first partition. A first barrier rib through-hole and a gas barrier layer through-hole communicating with the first barrier rib through-hole and penetrating the gas barrier layer are provided.

  According to this configuration, even when a gas is generated in the organic planarization layer when the partition is formed, it is discharged to the outside of the organic planarization layer through the gas barrier layer through hole and the partition through hole. Further, in the manufacturing process after the partition walls are formed, the substrate is heated to raise the temperature of the organic planarization layer, thereby promoting the discharge of impurities from the gas barrier layer through holes and the partition wall through holes. As a result, impurities in the organic planarization layer are reduced and gas generation is prevented. In addition, by providing a gas barrier layer between the organic planarization layer and the first electrode, the gas generated from the organic planarization layer is suppressed from diffusing to the first electrode side immediately above. Accordingly, not only the generation of gas from the organic planarization layer can be prevented, but also the generated gas can be discharged to the outside, and the deterioration of the display quality of the organic EL device due to the accumulation of gas can be prevented. An organic EL device with high performance can be provided.

  Application Example 2 In the organic EL device according to the application example, the first partition wall has lyophilicity, the second partition wall has liquid repellency, and the second partition wall is on the first partition wall. It is preferable that the end of the second partition is formed closer to the first partition through hole formed in the first partition than the end of the first partition.

  According to this configuration, when the liquid phase material is disposed in the pixel opening of the partition and dried to form the functional layer, the organic partition prevents the liquid phase material from flowing out of the pixel opening. In addition, since the first partition is exposed in a step shape at the boundary between the first partition and the second partition in the pixel opening, the wettability in the vicinity of the boundary between the first partition and the second partition in the pixel opening is improved. . Therefore, when the liquid phase material is dried and the volume is reduced and the liquid level approaches the boundary between the first partition and the second partition, the thickness of the liquid phase material is made uniform by the first partition and the functional layer is flattened. Can be formed. Therefore, the light emission of the organic EL device becomes uniform, and the effect of improving the characteristics and reliability can be obtained.

  Application Example 3 In the organic EL device according to the application example, the first partition includes a third partition formed on the organic planarization layer side and a fourth partition formed on the second partition side. Preferably, the end of the fourth partition is formed closer to the first partition through hole formed in the first partition than the end of the third partition.

  According to this structure, the surface area of the 1st partition in a pixel opening part expands more, and the wettability with respect to the liquid phase material of a functional layer improves more. Therefore, the functional layer can be formed more flatly, and the effect of greatly improving the uniformity and reliability of light emission can be obtained.

  Application Example 4 In the organic EL device according to the application example described above, the second partition wall passes through the second partition wall and the gas barrier layer and communicates with the first partition wall through hole, or the first partition wall. It is preferable that a second partition wall through hole that reaches the organic planarization layer through the through hole is formed.

  According to this configuration, the impurities that generate the gas in the organic planarization layer can be promoted and discharged to the outside through the through holes. Therefore, the occurrence of pixel defects or dark spots can be suppressed, and an effect of improving reliability can be obtained.

  Application Example 5 In the organic EL device according to the application example, the end of the first partition wall through hole is closer to the pixel opening formed in the first partition than the end of the gas barrier layer through hole. Preferably it is formed.

  According to this configuration, after forming the gas barrier layer through-hole, the first partition wall can be formed on the gas barrier layer through-hole, and the first partition wall through-hole can be easily formed by a photolithography process or the like. Can be easily released to the outside. Therefore, the occurrence of pixel defects or dark spots can be suppressed, and the effect of improving reliability can be obtained.

  Application Example 6 In the organic EL device according to the application example, the end of the gas barrier layer through hole is closer to the pixel opening formed in the first partition than the end of the first partition through hole. Preferably it is formed.

  According to this configuration, the first partition wall through hole can be narrower than the gas barrier layer through hole. Therefore, the gas component generated from the organic planarization layer does not diffuse to the end portion of the second partition wall forming the pixel, and an effect of diffusing in the vertical direction can be obtained.

  Application Example 7 In the organic EL device according to the application example, the gas barrier layer preferably contains an inorganic compound.

According to this configuration, a material having a high gas barrier property such as SiO ₂ , SiN, or SiOxNy can be used as the inorganic compound. Therefore, the effect of suppressing the diffusion of the gas component generated from the organic planarization layer can be obtained.

  Application Example 8 In the organic EL device according to the application example, it is preferable that the gas barrier layer includes an organic resin.

  According to this configuration, a material having a high gas barrier property made of an organic resin can be used. Therefore, by using the organic resin material, it is possible to obtain an effect that the film can be easily formed by a printing process such as spin coating or slit coater as in the case of forming the organic flattening layer.

  Application Example 9 In the organic EL device according to the application example, the gas barrier layer is preferably made of an organic resin or an inorganic compound.

  According to this configuration, a material having a high gas barrier property can be used as the inorganic compound. Moreover, the effect which suppresses the spreading | diffusion of the gas component generated from an organic planarization layer can be acquired. Further, by using an organic resin material, it is possible to obtain an effect that can be easily formed by a printing process such as spin coating or slit coater, as in the case of forming an organic flattening layer.

  Application Example 10 In the organic EL device according to the application example described above, the gas barrier layer preferably includes a layer containing a metal.

  According to this configuration, since the metal-containing layer is included, the gas barrier property can be improved.

  Application Example 11 In the organic EL device according to the application example, it is preferable that the gas barrier layer has reflectivity.

  According to this structure, since it has reflectivity, the gas barrier layer which has a reflective function and gas barrier property can be comprised. For example, it can be applied to a top emission structure.

  Application Example 12 In the organic EL device according to the application example, it is preferable that the first partition is formed so as not to contact the organic planarization layer.

  According to this configuration, since the first partition and the gas barrier layer are simultaneously penetrated to form the through hole, the manufacturing process can be simplified and the productivity can be improved. In addition, it is possible to suppress the size of the gas barrier layer through-holes and partition wall through-holes for releasing the gas generated from the organic planarization layer to the outside, and to easily discharge the gas to the outside.

  Application Example 13 An electronic apparatus according to this application example includes the organic EL device described above.

  According to this configuration, since the above-described organic EL device is provided, it is possible to prevent the display quality of the organic EL device from being deteriorated due to gas accumulation, and to provide a highly reliable electronic device.

FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the organic EL device according to the first embodiment. The schematic cross section which shows the structure of an organic electroluminescent apparatus. The top view which shows the Example of the shape and arrangement | positioning of the through-hole in an inorganic partition. The schematic cross section which shows the manufacturing method of an organic electroluminescent apparatus in order of a process. The schematic cross section which shows the manufacturing method of an organic electroluminescent apparatus in order of a process. The schematic cross section which shows the manufacturing method of an organic electroluminescent apparatus in order of a process. The model perspective view which shows a television as an example of the electronic device provided with the organic EL apparatus. The schematic cross section which shows the structure of the organic electroluminescent apparatus of a modification. The schematic cross section which shows the structure of the organic electroluminescent apparatus of a modification.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

<Configuration of organic EL device>
First, a schematic configuration of the organic EL device according to the present embodiment will be described with reference to FIGS. 1 is an equivalent circuit diagram showing the electrical configuration of the organic EL device, FIG. 2 is a schematic cross-sectional view showing the structure of a light emitting pixel of the organic EL device, and FIGS. 3A to 3C are through holes in an inorganic partition wall. It is a schematic plan view which shows a shape and arrangement | positioning.

  As shown in FIG. 1, the organic EL device 11 includes a plurality of scanning lines 12, a plurality of signal lines 13 extending in a direction intersecting the scanning lines 12, and a plurality of power supply lines 14 extending in parallel to the signal lines 13. And a pixel region 15 is formed in the vicinity of each intersection of the scanning line 12 and the signal line 13.

  Connected to the signal line 13 is a data side driving circuit 16 including a shift register, a level shifter, a video line, and an analog switch. A scanning side drive circuit 17 having a shift register and a level shifter is connected to the scanning line 12. Each pixel region 15 includes a switching thin film transistor (TFT) 18 to which a scanning signal is supplied to the gate electrode via the scanning line 12, and a signal line 13 via the switching TFT 18. A holding capacitor 19 that holds the supplied pixel signal, a driving TFT 22 to which the pixel signal held by the holding capacitor 19 is supplied to the gate electrode 21, and the power supply line 14 through the driving TFT 22 are electrically connected. When connected, a pixel electrode 23 serving as an anode into which a drive current flows from the power supply line 14 and a functional layer 25 including an organic light emitting layer sandwiched between the pixel electrode 23 and a common electrode 24 serving as a cathode are provided. It has been. The pixel electrode 23, the common electrode 24, and the functional layer 25 constitute an organic EL element 26.

  According to such a configuration, when the scanning line 12 is driven and the switching TFT 18 is turned on, the potential of the signal line 13 at that time is held in the holding capacitor 19, and the driving line is driven according to the state of the holding capacitor 19. The on / off state of the TFT 22 is determined. Then, a current flows from the power supply line 14 to the pixel electrode 23 via the channel of the driving TFT 22, and further a current flows to the common electrode 24 via the functional layer 25. Then, the functional layer 25 emits light according to the amount of current flowing therethrough.

  As shown in FIG. 2, the organic EL device 11 transmits light emitted from the functional layers 25 of a large number of organic EL elements 26 formed on the substrate 31 on the side opposite to the substrate 31 on which the organic EL elements 26 are formed. This is a top emission type organic EL device that is taken out from the sealing substrate 51.

The substrate 31 is formed of, for example, Si (silicon) or the like, and an insulating film 32 is formed on the substrate 31 of, for example, SiO ₂ (silicon oxide) or the like. On the insulating film 32, driving TFTs 22 are provided corresponding to the individual organic EL elements 26. The driving TFT 22 includes a semiconductor layer 33 formed on the insulating film 32, and a gate electrode 21 disposed to face a channel region (not shown) of the semiconductor layer 33 with a gate insulating film 34 interposed therebetween. . An interlayer insulating film 35 is formed so as to cover the gate insulating film 34 and the gate electrode 21.

  A source electrode 36 and a drain electrode 37 are formed on the interlayer insulating film 35 and are connected to the source region and the drain region of the semiconductor layer 33 through contact holes 38a and 38b, respectively. The source electrode 36 is connected to the power supply line 14 formed on the interlayer insulating film 35.

  A flattening layer (organic flattening layer) 41 for flattening the substrate 31 is formed so as to cover the driving TFT 22 and the power supply line 14. The planarization layer 41 is formed of an organic material having heat resistance and insulating properties such as acrylic or polyimide. A gas barrier layer 53 is formed on the planarization layer 41. The gas barrier layer 53 is formed of an inorganic material having a high gas barrier property such as SiN or SiOx.

  On the gas barrier layer 53, a pixel electrode (first electrode) 23 that is an anode of the organic EL element 26 is formed. The pixel electrode 23 is formed of a reflective conductive material such as Al (aluminum), for example. The pixel electrode 23 is connected to the drain electrode 37 through a contact hole 42 that passes through the planarization layer 41 and reaches the drain electrode 37. Further, the gate electrode 21 of the driving TFT 22 is electrically connected to the holding capacitor 19 that is connected to the switching TFT 18 (see FIG. 1) and holds a pixel signal.

  On the pixel electrode 23, a partition wall 45 including an inorganic partition wall (first partition wall) 43 and an organic partition wall (second partition wall) 44 formed on the inorganic partition wall 43 is formed. In the partition wall 45, the pixel electrode 23 is partitioned for each organic EL element 26, and an opening 45 a (pixel opening) that exposes the upper portion of the pixel electrode 23 (surface opposite to the substrate 31) is formed. In addition, a stepped step is formed at the boundary between the organic partition wall 44 and the inorganic partition wall 43 in the opening 45a at the opening 45a of the partition wall 45 by a part of the inorganic partition wall 43 exposed in the opening 45a. ing.

The inorganic partition wall 43 is made of, for example, an insulating inorganic material such as SiO ₂ . And the lyophilic process is given to the surface, wettability is improved and it has lyophilic property. The organic partition wall 44 is made of, for example, the same organic material as that of the planarization layer 41. The surface is subjected to a liquid repellency treatment and has liquid repellency.

  Here, in the present embodiment, the inorganic partition wall 43 is formed with a through hole (first partition wall through hole) 46 that penetrates the inorganic partition wall 43 and reaches the planarization layer 41. The organic partition wall 44 is in contact with the planarization layer 41 through the through hole 46. Further, as shown in FIG. 3A, the through holes 46 are scattered in the periphery of the opening 45a in a plan view, or as shown in FIG. 3B, the opening 45a. Is formed in an annular shape around Further, as shown in FIG. 3C, groove-like through holes 46 may be formed around the opening 45a in a lattice shape. In FIG. 3, the opening 45a is elliptical in plan view, but is not limited to this. For example, it may be a polygonal shape such as a quadrangle or a track shape in which the short side is an arc.

  As shown in FIG. 2, a functional layer 25 is provided inside the opening 45a. The functional layer 25 includes a hole injection / transport layer 47 formed on the pixel electrode 23 side, and a light emitting layer 48 formed by being laminated thereon. The hole injection / transport layer 47 is, for example, a 3,4-polyethylenedioxythiophene-polystyrenesulfonic acid (PEDOT-PSS) dispersion, that is, 3,4-polyethylenedioxythiophene using polystyrenesulfonic acid as a dispersion medium. And a liquid phase material such as a dispersion in which this is dispersed in water is dried.

  The light emitting layer 48 is made of a known light emitting material capable of emitting fluorescence or phosphorescence. In particular, when full-color display is performed, a material that emits light corresponding to each wavelength range of red, green, and blue is used.

Examples of the material for forming the light emitting layer 48 include (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), and polyvinylcarbazole (PVK). Polysilanes such as polythiophene derivatives and polymethylphenylsilane (PMPS) are preferably used. In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as. Further, a phosphorescent material such as Ir (ppy) ₃ can also be used.

  On the functional layer 25, a common electrode (second electrode) 24 that is a cathode of the organic EL element 26 is provided so as to cover the functional layer 25 and the partition wall 45. The common electrode 24 is formed of a light-transmitting conductive material such as ITO (indium tin oxide). On the common electrode 24, a sealing substrate 51 formed of a transparent material such as glass or quartz is attached via a light-transmitting adhesive layer 52.

<Method for manufacturing organic EL device>
Next, a method for manufacturing the organic EL device will be described with reference to FIGS. 4 (a) to 4 (c), 5 (a) to 5 (b), and 6 (a) to 6 (b) are schematic cross-sectional views illustrating a method for manufacturing an organic EL device.

  As shown in FIG. 4A, first, an insulating film 32 is formed on a substrate 31, and a driving TFT 22, a switching TFT 112 (see FIG. 1), the above-described wirings, circuits, and the like are formed on the insulating film 32. . Specifically, the semiconductor layer 33 of the driving TFT 22 and the gate insulating film 34 covering the semiconductor layer 33 are formed on the insulating film 32, and the gate electrode 21 is formed thereon.

  Then, the semiconductor layer 33 is doped with impurities to form a source region, a drain region, and a channel region. Then, an interlayer insulating film 35 is formed so as to cover them, and contact holes 38a and 38b that penetrate the interlayer insulating film 35 and reach the source region and the drain region of the semiconductor layer 33 are formed by photolithography.

  Next, as shown in FIG. 4B, the power supply line 14 is formed on the interlayer insulating film 35. Next, a source electrode 36 and a drain electrode 37 are formed on the interlayer insulating film 35. The source electrode 36 is formed in contact with the source region of the semiconductor layer 33 and the power supply line 14. The drain electrode 37 is formed in contact with the drain region of the semiconductor layer 33.

  Next, as shown in FIG. 4C, a planarization layer 41 is formed so as to cover them. Next, a contact hole 42 that penetrates the planarization layer 41 and reaches the drain electrode 37 is formed by photolithography.

  Next, as shown in FIG. 5A, a gas barrier layer 53 is formed on the planarization layer 41. Specifically, for example, an inorganic material having a high gas barrier property such as SiN or SiOx is formed by using a vacuum deposition method, a sputtering method, or the like. Thereafter, patterning is performed using a photolithography method and an etching method.

  Next, as shown in FIG. 5B, the pixel electrode 23 is formed so as to overlap the gas barrier layer 53 in a plan view, and is connected to the drain electrode 37 through the contact hole 42.

  Next, as illustrated in FIG. 6A, a solid inorganic material layer 143 is formed so as to cover the pixel electrode 23, the gas barrier layer 53, and the planarization layer 41. Then, by photolithography, the pixel electrode 23 is partitioned in the inorganic material layer 143 and the opening 43a exposing the upper portion of the pixel electrode 23, the inorganic material layer 143, and the gas barrier layer 53 are penetrated to reach the planarization layer 41. A through hole 46 is formed to complete the inorganic partition wall 43.

  At this time, for example, impurities that generate gas remain in the planarization layer 41. Further, the planarization layer 41 is exposed to a resist stripping solution used in the photolithography method.

  Next, as shown in FIG. 6B, an organic material layer 144 is formed to cover the planarization layer 41, the pixel electrode 23, and the inorganic partition wall 43, and an opening 44a is formed in the organic material layer 144 by photolithography. Then, the organic partition wall 44 is formed. At this time, the opening 44 a of the organic partition 44 is formed to be slightly larger than the opening 43 a of the inorganic partition 43. Thereby, the partition wall 45 including the inorganic partition wall 43 and the organic partition wall 44 and having an opening portion 45 a formed of the opening portion 43 a of the inorganic partition wall 43 and the opening portion 44 a of the organic partition wall 44 is formed.

Next, the surface of the pixel electrode 23 is cleaned, and then oxygen plasma treatment is performed on the surface on which the pixel electrode 23, the inorganic partition wall 43, and the organic partition wall 44 are formed. Thereby, contaminants, such as an organic substance adhering to the surface, are removed and wettability is improved. Specifically, the substrate 31 is heated to a predetermined temperature, for example, about 70 to 80 ° C., and then plasma processing (O ₂ plasma processing) using oxygen as a reaction gas under atmospheric pressure is performed.

Next, the wettability of the upper and side surfaces of the organic partition wall 44 is reduced by performing a liquid repellent treatment. Specifically, a plasma treatment (CF ₄ plasma treatment) using methane tetrafluoride as a reaction gas under atmospheric pressure is performed, and then the substrate 31 heated for the plasma treatment is cooled to room temperature, whereby organic The upper surface and side surfaces of the partition wall 44 are made liquid repellent, and the wettability is lowered.

In this CF ₄ plasma treatment, the exposed surface of the pixel electrode 23 and the inorganic partition wall 43 are also affected to some extent, but ITO that is a material of the pixel electrode 23 and SiO ₂ that is a constituent material of the inorganic partition wall 43 are Since the affinity for fluorine is poor, the wettability of the surface improved by oxygen plasma treatment is maintained. Next, the substrate 31 is heated to, for example, a temperature of about 200 ° C. to perform an annealing process.

  Next, as shown in FIG. 2, a hole injection / transport layer 47 is formed in the opening 45 a surrounded by the partition wall 45. In the step of forming the hole injection / transport layer 47, a spin coating method or a droplet discharge method is employed. In this embodiment, a material for forming the hole injection / transport layer 47 is selectively used in the opening 45a. In particular, an inkjet method that is a droplet discharge method is preferably employed.

  By this inkjet method, a dispersion of PEDOT-PSS, which is a material for forming the hole injection / transport layer 47, is disposed on the exposed surface of the pixel electrode 23, and then heat treatment (drying / firing treatment) is performed at, for example, 200 ° C. For about 10 minutes, a hole injection / transport layer 47 having a thickness of about 20 nm to 100 nm is formed. As for the formation method of the hole injection / transport layer 47, the spin coating method can be employed as described above, particularly when the pixel region 15 is not partitioned by the inorganic partition wall 43 or the organic partition wall 44.

  Next, a light emitting layer 48 is formed on the hole injection / transport layer 47. In the formation process of the light emitting layer 48, as in the formation of the hole injecting / transporting layer 47, an ink jet method which is a droplet discharge method is preferably employed. That is, the material for forming the light emitting layer 48 is ejected onto the hole injecting / transporting layer 47 by an inkjet method, and then heat treatment is performed at 130 ° C. for about 30 minutes in a nitrogen atmosphere, so that the opening formed in the partition wall 45 is formed. A light emitting layer 48 having a thickness of about 50 nm to 200 nm is formed in 45a, that is, on the pixel region 15.

  As the solvent used in the material for forming the light emitting layer 48, a solvent that does not re-dissolve the hole injection / transport layer 47, such as xylene, is preferably used. As for the formation method of the light emitting layer 48, in particular, when the pixel region 15 is not partitioned by the inorganic partition wall 43 or the organic partition wall 44, the spin coating method is adopted as in the case of forming the hole injection / transport layer 47. You can also.

  Next, the common electrode 24 is formed of ITO covering the light emitting layer 48 and the organic partition wall 44. Unlike the formation of the hole injection / transport layer 47 and the light emitting layer 48, the common electrode 24 is not selectively formed only in the pixel region 15 by the vapor deposition method or the sputtering method. A common electrode 24 is formed on almost the entire surface of 31.

  Thereafter, an adhesive layer 52 is formed on the common electrode 24 using an adhesive, and the sealing substrate 51 is further adhered by the adhesive layer 52 to perform sealing.

<Configuration of electronic equipment>
FIG. 7 is a schematic perspective view illustrating a television as an example of an electronic apparatus including the above-described organic EL device. Hereinafter, the configuration of a television provided with an organic EL device will be described with reference to FIG.

As shown in FIG. 7, the television 91 includes a display unit 92, a frame unit 93, a leg unit 94, and a remote controller 95. The display unit 92 can perform high-quality display such as prevention of pixel defects by the organic EL device 11 incorporated therein. The above-described organic EL device 11 can be used for various electronic devices such as a display, a mobile computer, a digital camera, a digital video camera, an in-vehicle device, an audio device, a lighting device, and a light source of an optical printer, in addition to the television. .

  As described above in detail, according to the organic EL device 11 and the electronic apparatus of the present embodiment, the following effects can be obtained.

  (1) According to the organic EL device 11 of the present embodiment, as described above, the through-hole 46 reaching the planarization layer 41 is formed in the inorganic partition wall 43 and the gas barrier layer 53. Therefore, when the gas barrier layer 53 or the inorganic partition wall 43 is formed, the planarization layer 41 is exposed to the resist stripping solution, and the chemical substance contained in the resist stripping solution acts on the impurities in the planarization layer 41 to generate gas. However, the generated gas is discharged to the outside of the planarization layer 41 through the through hole 46. Therefore, gas can be prevented from being accumulated inside the planarization layer 41 or between the planarization layer 41 and the pixel electrode 23 and the inorganic partition wall 43.

  (2) According to the organic EL device 11 of the present embodiment, since the gas barrier layer 53 is formed so as to cover the planarization layer 41, the gas generated by acting on the impurities in the planarization layer 41 is It does not come out of the opening 45 a and is discharged to the outside through the through hole 46. As a result, pixel defects in the organic EL device 11 can be suppressed, and reliability is improved.

  (3) According to the organic EL device 11 of the present embodiment, when the liquid crystal material is disposed in the opening 45a of the partition wall 45 and dried to form the functional layer 25, the partition wall 45 causes the outside of the opening 45a to be formed. The liquid phase material is prevented from flowing into the Further, since the inorganic partition wall 43 is exposed in a stepped manner at the boundary between the organic partition wall 44 and the inorganic partition wall 43 in the opening 45a, the surface area of the inorganic partition wall 43 in the vicinity of the boundary is increased and wettability is improved. Therefore, when the liquid phase material is dried and the volume is reduced and the liquid level approaches the boundary between the organic partition wall 44 and the inorganic partition wall 43, the liquid phase material is pinned to the lyophilic inorganic partition wall 43, and the liquid phase material The thickness is made uniform. Therefore, the functional layer 25 can be formed flat after drying.

  (4) According to the organic EL device 11 of the present embodiment, after the inorganic partition wall 43 having the through hole 46 is formed, the temperature of the planarization layer 41 is increased by heating the substrate 31 by plasma treatment, annealing treatment, or the like. Ascending, the discharge of impurities from the through hole 46 is promoted. Thereby, impurities in the planarization layer 41 are reduced. Therefore, after the organic EL element 26 is sealed with the sealing substrate 51, generation of gas from the planarization layer 41 is prevented, and gas is prevented from accumulating inside the organic EL device 11.

  (5) According to the organic EL device 11 of the present embodiment, the through holes 46 have openings that are scattered around the opening 45a or are formed in an annular shape around the opening 45a. Therefore, the opening area of the through-hole 46 can be increased, and the impurities and gas in the planarization layer 41 can be discharged more effectively, and gas can be reliably prevented from accumulating in the vicinity of the functional layer 25. it can.

  (6) According to the organic EL device 11 of this embodiment, not only can gas be prevented from being generated from the planarization layer 41, but also gas generated from the planarization layer 41 in the manufacturing process can be discharged to the outside. Further, it is possible to prevent the display quality of the organic EL device 11 from being deteriorated due to gas accumulation. Furthermore, due to the effect of the gas barrier layer 53, the gas from the planarization layer 41 is further suppressed from being discharged into the opening 45a thereon, and high reliability can be ensured.

  (7) According to the electronic apparatus of the present embodiment, since the above-described organic EL device 11 is provided, it is possible to prevent the display quality of the organic EL device 11 from being deteriorated due to gas accumulation, and the highly reliable electronic device. Equipment can be provided.

  In addition, embodiment is not limited above, It can also implement with the following forms.

(Modification 1)
As described above, as a method of forming the through hole 46, instead of forming the inorganic material layer 143 and the gas barrier layer 53 through the photolithographic method, for example, as shown in FIG. Also good. FIG. 8 is a schematic cross-sectional view showing the structure of a modified organic EL device 111. In the organic EL device 111 shown in FIG. 8, an inorganic partition wall 43 is formed so as to cover the side surface of the gas barrier layer 53. According to this, after forming the gas barrier layer 53, the inorganic partition wall 43 is formed on the gas barrier layer 53, and the through hole 46 (146) can be easily formed in the inorganic partition wall 43 by a photolithography process or the like. The gas component from can be easily released to the outside.

(Modification 2)
As described above, in addition to forming the opening 44a from the organic material layer 144, it may be formed as shown in FIG. FIG. 9 is a schematic cross-sectional view showing the structure of a modified organic EL device 211. In the organic EL device 211 shown in FIG. 9, after forming the organic material layer 144, the opening 44 a and the through hole 246 are formed using a photolithography method and an etching method. According to this, since the through hole 246 reaching the planarizing layer 41 is formed, the generated gas can be discharged to the outside through the through hole 246 together with the through hole 46.

(Modification 3)
As described above, the top emission type organic EL device 11 has been described in the above embodiment, but it goes without saying that the present invention can be applied to a bottom emission type organic EL device that extracts light from the opposite side to the above embodiment. Yes. Further, the same effect as described above can be obtained even when the present invention is implemented using an element substrate for a simple matrix instead of an active matrix using TFTs or the like, and driven in a simple matrix.

(Modification 4)
As described above, the gas barrier layer 53 is not limited to using an inorganic compound such as SiO ₂ , and for example, an organic resin material may be used. Examples of the organic resin material include acrylic and polyimide materials as in the planarization layer 41. According to this, the gas barrier property can be maintained, and the film can be easily formed by a printing process such as a spin coater or a slit coater in the same manner as the organic flattening layer is formed.

(Modification 5)
As described above, the partition wall 45 is not limited to being constituted by the inorganic partition wall 43 and the organic partition wall 44. For example, the inorganic partition wall 43 is further divided into two, and two inorganic partition walls (planarization layer 41). The opening 45 a may be formed in a stepped shape by the third partition formed on the side, the fourth partition formed on the organic partition 44 side, and the organic partition 44. According to this, the surface area of the inorganic partition wall 43 in the opening 45a is further increased, and the wettability of the functional layer 25 with respect to the liquid phase material is further improved. Therefore, the functional layer 25 can be formed more flatly, and the uniformity and reliability of light emission can be greatly improved.

  DESCRIPTION OF SYMBOLS 11 ... Organic EL device, 12 ... Scanning line, 13 ... Signal line, 14 ... Power supply line, 15 ... Pixel region, 16 ... Data side drive circuit, 17 ... Scanning side drive circuit, 18 ... Switching TFT, 19 ... Retention capacitance DESCRIPTION OF SYMBOLS 21 ... Gate electrode, 22 ... Driving TFT, 23 ... Pixel electrode as first electrode, 24 ... Common electrode as second electrode, 25 ... Functional layer, 26 ... Organic EL element, 31 ... Substrate, 32 ... Insulation Films 33 ... Semiconductor layer 34 ... Gate insulating film 35 ... Interlayer insulating film 36 ... Source electrode 37 ... Drain electrode 38a, 38b ... Contact hole 41 ... Flattening layer as organic flattening layer 42 ... Contact hole 43... Inorganic partition as first partition, 44. Organic partition as second partition, 45. Partition, 45 a. Opening as pixel opening, 46. First partition through hole, gas barrier layer through hole. Through holes, 47 ... hole injection / transport layer, 48 ... light emitting layer, 51 ... sealing substrate, 52 ... adhesive layer, 53 ... gas barrier layer, 91 ... TV, 92 ... display part, 93 ... frame part, 94 ... Legs, 95 ... Remote control, 143 ... Inorganic material layer, 144 ... Organic material layer.

Claims (13)

A substrate,
An organic planarization layer formed on the substrate;
A gas barrier layer formed on the organic planarization layer;
A first electrode formed on the gas barrier layer;
A partition wall formed with a pixel opening exposing an upper portion of the first electrode;
A functional layer including at least an organic light emitting layer provided in the pixel opening;
A second electrode provided to cover the functional layer,
The partition includes a first partition and a second partition stacked on the first partition,
A first partition wall through-hole that reaches the gas barrier layer through the first partition wall; and a gas barrier layer through-hole that communicates with the first partition wall through-hole and penetrates the gas barrier layer. Organic EL device. The first partition wall is lyophilic, the second partition wall is liquid repellent;
The second partition is formed on the first partition, and the end of the second partition is formed closer to the first partition through hole formed in the first partition than the end of the first partition. The organic EL device according to claim 1, wherein: The first partition includes a third partition formed on the organic planarization layer side and a fourth partition formed on the second partition side,
3. The organic material according to claim 2, wherein an end portion of the fourth partition wall is formed on a side closer to the first partition wall through hole formed in the first partition wall than an end portion of the third partition wall. EL device.   The second partition wall penetrates through the second partition wall and the gas barrier layer to communicate with the first partition wall through hole, or reaches the organic planarization layer through the first partition wall through hole. The organic EL device according to claim 2, wherein a partition through hole is formed.   The end portion of the first partition wall through hole is formed closer to the pixel opening formed in the first partition wall than the end portion of the gas barrier layer through hole. Organic EL device.   The end of the gas barrier layer through-hole is formed closer to the pixel opening formed in the first partition than the end of the first partition through-hole. Organic EL device.   The organic EL device according to claim 1, wherein the gas barrier layer contains an inorganic compound.   The organic EL device according to claim 1, wherein the gas barrier layer contains an organic resin.   The organic EL device according to claim 1, wherein the gas barrier layer is made of an organic resin or an inorganic compound.   The organic EL device according to claim 1, wherein the gas barrier layer includes a layer containing a metal.   The organic EL device according to claim 1, wherein the gas barrier layer has reflectivity.   The organic EL device according to claim 1, wherein the first partition is formed so as not to contact the organic planarization layer.   An electronic apparatus comprising the organic EL device according to any one of claims 1 to 12.

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