JP2008071872A - Organic el device and manufacturing method thereof, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic EL device for uniformizing the size (emission area) of a light emitting region between pixels and preventing irregularities in emission between pixels, to provide a manufacturing method of the organic EL device, and to provide electronic equipment having the organic EL device. <P>SOLUTION: In the organic EL device, a hole injection transporting layer 60 and a luminous layer 70 are arranged in this order between a positive electrode 111 and a negative electrode. A first barrier rib 25 made of a silicon-based insulation material for demarcating the positive electrode 111 by covering the periphery of the positive electrode 111 is provided on the positive electrode 111. A second barrier rib 221 made of an organic resin material while an edge section 25b at the side of the positive electrode 111 is exposed is provided on the first barrier rib 25. The hole injection transporting layer 60 made of a material containing a thermal crosslinking material is arranged at a region surrounded by the first barrier rib 25 on the positive electrode 111 without being placed at the edge section 25b of the first barrier rib 25. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an organic EL device, a manufacturing method thereof, and an electronic apparatus.

  In recent years, attention has been paid to an organic EL device in which a light emitting material such as an organic fluorescent material is sandwiched between electrodes. In such an organic EL device, a hole injecting and transporting layer is generally disposed on the anode side of the light emitting layer in order to increase the light emitting efficiency of the light emitting layer made of the light emitting material. As a hole injecting and transporting layer, 3,4-polyethylenedioxythiophene-polystyrene sulfonic acid [PEDOT (Polyethylene Dioxythiophene) -PSS (Polystyrene Sulphonate)] is generally used as a hole injecting and transporting material for forming the hole injecting and transporting layer. It is used.

  By the way, when manufacturing a display device that displays characters, images, and the like as an organic EL device, usually, a large number of pixels are formed vertically and horizontally to perform active matrix driving. Further, when the light emitting material or the hole injection material is formed by a liquid phase method such as an ink jet method, these materials are selectively disposed on the pixel electrode, and an independent organic EL element is formed for each pixel. At this time, it is important to obtain a uniform light emission characteristic by uniformly arranging the material for each pixel and emitting light uniformly for each pixel (for each organic EL element).

In addition, as a method of forming the light emitting layer and the hole injecting and transporting layer by arranging the light emitting material and the hole injecting material for each pixel, a partition wall is formed in advance for each pixel, A technique is known in which the material is disposed in the opening of the partition wall and cured (see, for example, Patent Document 1).
When the partition walls are formed, usually, as shown in FIG. 8, first partition walls 91 made of an inorganic material that mainly insulates between the pixel electrodes 90, and an organic material that controls wettability with respect to the respective materials. A partition wall 93 is formed by laminating a second partition wall 92 and partitioning each pixel by the partition walls 91 and 92.

Here, when the second partition wall 92 is stacked on the first partition wall 91, the edge 91b of the first partition wall 91 on the pixel electrode 90 side is exposed in order to obtain an alignment margin. In this state, a second partition wall 92 is formed. That is, the second partition wall 92 is formed in a state where the end edge portion 91 b protrudes into the opening 92 a of the second partition wall 92. Then, a hole injection material is disposed on the pixel electrode 90 in the opening of the partition wall 93 formed in this way and cured to form a hole injection transport layer 94. Further, a light emitting material is disposed thereon and cured to form a light emitting layer 95.
JP 2006-12762 A

By the way, in the structure obtained by the above manufacturing method, since the first partition wall 91 is usually very thin, the hole injecting and transporting layer 94 is placed on the edge 91b of the first partition wall 91. Is formed.
When the hole injecting and transporting layer 94 is formed on the edge portion 91b as described above, the holes injected from the pixel electrode 90 are not only in the opening 91a of the first partition wall 91, but also in the above described manner. The light is transported (flowed) onto the edge portion 91b and combined with electrons injected from a cathode (not shown) in the light emitting portion 95 on the edge portion 91b to emit light. That is, when the PEDOT-PSS is used as the hole injecting and transporting layer 94, the conductivity is increased by reducing the component ratio of polystyrene sulfonic acid as a dispersion medium, whereby the positive electrode injected from the pixel electrode 90 is increased. The hole is transported (flowed) not only in the opening 91a but also onto the edge 91b.

  Thus, when light is emitted also on the edge portion 91b, the light emitting region of the pixel corresponding to one pixel electrode 90 is not the region L1 defined by the opening 91a of the first partition wall 91, but the first region. The region L2 is defined by the opening 92a of the second partition wall 92. However, on the edge 91b, the thickness of the hole injecting and transporting layer 94 becomes very thin. Therefore, the hole transportability (flow) is likely to be uneven, and light emission on the edge 91b is caused. Becomes very unstable. Therefore, when comparing between pixels, a pixel that emits light particularly well on the edge portion 91b and a pixel that hardly emits light on the edge portion 91b are generated, resulting in a substantial difference between the pixels. Different sizes of light emitting regions (light emitting areas) cause uneven light emission between pixels.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an organic EL device in which the size (light emitting area) of a light emitting region is made uniform between pixels, thereby preventing uneven light emission between pixels. An apparatus, a manufacturing method thereof, and an electronic device including the organic EL device are provided.

In order to achieve the above object, the organic EL device of the present invention is an organic EL device in which a hole injection transport layer and a light emitting layer are disposed in this order between an anode and a cathode.
A first partition made of a silicon-based insulating material is provided on the anode so as to partition the anode by covering the periphery of the anode,
On the first partition, a second partition made of an organic resin material is provided in a state in which the edge portion on the anode side of the first partition is exposed,
A hole injecting and transporting layer made of a cross-linked hole injecting and transporting polymer is placed on the edge of the first partition wall in a region surrounded by the first partition wall on the anode. Arranged without
The light emitting layer is disposed on the hole injecting and transporting layer.

  According to this organic EL device, since the hole injecting and transporting layer is disposed without being placed on the edge portion of the first partition wall, the holes injected from the anode are transferred to the first partition wall. It flows through the hole injecting and transporting layer present only in the opening and transported to the light emitting layer located immediately above it, where it emits light by combining with electrons. Therefore, the substantial light emitting region of each pixel is defined by the size of the opening of the first partition wall in which the hole injecting and transporting layer is formed. Therefore, the size of the light emitting region (light emitting area) becomes uniform among the pixels, thereby preventing uneven light emission between the pixels.

The organic EL device manufacturing method of the present invention is a method for manufacturing an organic EL device in which a hole injecting and transporting layer and a light emitting layer are disposed in this order between an anode and a cathode.
Forming the anode;
Forming a first partition made of a silicon-based insulating material on the anode to cover the periphery of the anode and partition the anode;
Forming a second partition made of an organic resin material on the first partition in a state where an edge of the first partition on the anode side is exposed;
Disposing a liquid hole injecting and transporting material containing a thermally crosslinkable material in a region surrounded by the first partition on the anode;
A step of heat-treating and insolubilizing the hole injection transport material;
The insolubilized hole injecting and transporting material is rinsed, so that only the region surrounded by the first partition wall is exposed to the heat-crosslinkable material without being placed on the edge of the first partition wall. And a step of selectively forming a hole injecting and transporting layer, and a step of forming the light emitting layer on the hole injecting and transporting layer.

  According to this method for manufacturing an organic EL device, a liquid hole injection / transport material containing a thermally crosslinkable resin is disposed in a region surrounded by the first partition, and then heat-treated, so that thermal crosslinking is performed. The material is insolubilized in the solvent by causing a crosslinking reaction by heat treatment and bonding in a network. In addition, after the insolubilization, a rinsing process is performed with a solvent or the like, so that the uninsolubilized portion is re-dissolved and removed without the crosslinking reaction proceeding. As a result, a hole injecting and transporting layer made of a cross-linked hole injecting and transporting polymer is selected only in the region surrounded by the first partition without leaving it on the edge of the first partition. Can be formed. Therefore, the substantial light emitting region of each pixel can be defined by the size of the opening of the first partition wall, thereby making the size of the light emitting region (light emitting area) uniform between the pixels and between the pixels. It is possible to prevent uneven light emission.

  The mechanism by which the hole injection / transport layer can be selectively formed in the region surrounded by the first partition without leaving the hole injection / transport layer on the edge of the first partition is sufficiently elucidated. Although not carried out, the present inventor established a hole injection / transport layer made of a hole injection / transport polymer containing a thermally crosslinkable material by appropriately setting at least the temperature and time of heat treatment for insolubilization. And found that it can be formed without leaving on the edge.

Further, in the method for manufacturing the organic EL device, in the rinsing treatment, a solvent contained in the material for forming the light emitting layer is used, and a component dissolved in the solvent is added to the insolubilized hole injecting and transporting material. It is preferable to carry out by removing from.
In this way, when the light emitting layer is formed on the hole injecting and transporting layer by the liquid phase method, the hole injecting and transporting layer is re-dissolved by the solvent contained in the material for forming the light emitting layer. Is reliably prevented. Therefore, it is possible to prevent deterioration of characteristics of the hole injecting and transporting layer and the light emitting layer.

An electronic apparatus according to the present invention includes the organic EL device or the organic EL device obtained by the manufacturing method.
According to this electronic apparatus, as described above, since the organic EL device in which uneven light emission between pixels is prevented is provided, the display device has excellent display performance.

The present invention will be described in detail below.
(Organic EL device)
1 is an explanatory view showing a wiring structure of an embodiment of the organic EL device of the present invention, FIG. 2 is a schematic plan view of the organic EL device shown in FIG. 1, and FIG. 3 is an organic EL shown in FIG. FIG. 4 is an explanatory diagram for explaining a main configuration of the cross-sectional schematic diagram shown in FIG. 3.

  As shown in FIG. 1, the organic EL device 1 of the present embodiment includes a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction intersecting the scanning lines 101, and a plurality extending in parallel with the signal lines 102. The power source line 103 is wired, and the pixel region A is formed in the vicinity of each intersection of the scanning line 101 and the signal line 102.

Connected to the signal line 102 is a data side driving circuit 104 including a shift register, a level shifter, a video line, and an analog switch. A scanning side driving circuit 105 including a shift register and a level shifter is connected to the scanning line 101. In each of the pixel regions A, a switching thin film transistor 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a pixel signal supplied from the signal line 102 via the switching thin film transistor 112 are provided. Is electrically connected to the power supply line 103 via the driving thin film transistor 113, the driving thin film transistor 113 to which the pixel signal held by the holding capacity cap is supplied to the gate electrode, and the driving thin film transistor 113. In addition, an anode (pixel electrode) 111 into which a driving current flows from the power supply line 103 and a light emitting functional layer 110 sandwiched between the pixel electrode 111 and the cathode (counter electrode) 12 are provided.
The organic EL element is configured by including the anode (pixel electrode) 111, the cathode (counter electrode) 12, and the light emitting functional layer 110.

  According to such a configuration, when the scanning line 101 is driven and the switching thin film transistor 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor cap, and according to the state of the holding capacitor cap. The on / off state of the driving thin film transistor 113 is determined. Then, a current flows from the power supply line 103 to the pixel electrode 111 through the channel of the driving thin film transistor 113, and further a current flows to the cathode 12 through the light emitting functional layer 110. Then, the light emitting functional layer 110 emits light according to the amount of current flowing therethrough.

  As shown in FIGS. 2 and 3, the organic EL device 1 according to the present embodiment includes a transparent substrate 2 made of glass or the like and organic EL elements arranged in a matrix. As shown in FIG. 3, the organic EL element 3 formed on the substrate 2 includes a pixel electrode 111, a light emitting functional layer 110 including a hole injection transport layer 60 and a light emitting layer 70, and a cathode 12. . In the thickness direction of the substrate 2, a circuit element portion 14 is formed between the EL element portion 10 including the organic EL element 3 and the substrate 2. In the circuit element portion 14, the above-described scanning line, signal line, storage capacitor, switching thin film transistor, driving thin film transistor 123, and the like are formed.

  One end of the cathode 12 is connected to a cathode wiring (not shown) formed on the substrate 2, and one end 12 a of this wiring is connected to a wiring 5 a on the flexible substrate 5 as shown in FIG. 2. It is connected to the. The wiring 5 a is connected to a driving IC 6 (driving circuit) provided on the flexible substrate 5.

  In the organic EL device 1 of the present embodiment, light emitted from the light emitting functional layer 110 to the substrate 2 side is transmitted through the circuit element unit 14 and the substrate 2 and emitted to the outside (observer side) of the substrate 2. At the same time, the light emitted from the light emitting functional layer 110 to the side opposite to the substrate 2 is reflected by the cathode 12, passes through the circuit element portion 14 and the substrate 2, and is emitted to the outside (observer side) of the substrate 2. The so-called bottom emission type.

As shown in FIG. 3, in the circuit element portion 14, a base protective layer 281 mainly composed of SiO ₂ is formed on the substrate 2 as a base, and a silicon layer 241 is formed thereon. A gate insulating layer 282 mainly composed of SiO ₂ and / or SiN is formed on the surface of the silicon layer 241.
In the silicon layer 241, a region overlapping with the gate electrode 242 with the gate insulating layer 282 interposed therebetween is a channel region 241a. The gate electrode 242 is a part of a scanning line (not shown). On the other hand, a first interlayer insulating layer 283 mainly composed of SiO ₂ is formed on the surface of the gate insulating layer 282 that covers the silicon layer 241 and on which the gate electrode 242 is formed.

  Further, in the silicon layer 241, a low concentration source region 241b and a high concentration source region 241S are provided on the source side of the channel region 241a, while a low concentration drain region 241c and a high concentration drain are provided on the drain side of the channel region 241a. The region 241D is provided to form a so-called LDD (Light Doped Drain) structure. Among these, the high-concentration source region 241S is connected to the source electrode 243 through a contact hole 243a that opens over the gate insulating layer 282 and the first interlayer insulating layer 283. The source electrode 243 is configured as a part of a power supply line (not shown). On the other hand, the high-concentration drain region 241D is connected to the drain electrode 244 made of the same layer as the source electrode 243 through a contact hole 244a opened through the gate insulating layer 282 and the first interlayer insulating layer 283.

  A planarization film 284 is formed on the first interlayer insulating layer 283 where the source electrode 243 and the drain electrode 244 are formed. The planarizing film 284 is formed of a heat-resistant insulating resin such as acrylic or polyimide, and is formed to eliminate surface irregularities due to the driving TFT 123, the source electrode 243, the drain electrode 244, and the like. Are known.

  A pixel electrode (anode) 111 is formed on the surface of the planarization film 284, and the pixel electrode 111 is connected to the drain electrode 244 through a contact hole 111 a provided in the planarization film 284. Has been. That is, the pixel electrode 111 is connected to the high concentration drain region 241D of the silicon layer 241 through the drain electrode 244.

Also, on the surface of the planarization film 284 on which the pixel electrode 111 is formed, as shown in FIG. 4, the first partition wall 25 that covers the periphery of the pixel electrode 111 and exposes the central portion thereof is about 50 nm. It is formed with the thickness of. The first partition 25 covers the peripheral edge of the pixel electrode 111 and the periphery thereof to partition the pixel electrode 111 and insulate between the adjacent pixel electrodes 111. Silicon oxide such as SiO ₂ , It is formed from a silicon-based insulating material such as silicon nitride or silicon oxynitride.

  Further, a second partition 221 is formed on the first partition 25 with a thickness of about 2 μm. The second partition 221 is formed in a state in which the edge 25b on the pixel electrode 111 side of the first partition 25, that is, the edge 25b forming the opening 25a of the first partition 25 is exposed. It is a thing. The second partition 221 is made of a heat-resistant insulating resin such as acrylic or polyimide, and has wettability with respect to the material for forming the light-emitting layer 70 due to lyophilic treatment or lyophobic treatment. Is controlled.

  On the pixel electrode 111, a hole injection / transport layer 60 having a thickness of about 5 to 50 nm is formed in the opening 25a of the first partition wall 25. A light emitting layer 70 is formed in the opening 25 a of the partition wall 25 and in the opening 221 a of the second partition wall 221. That is, the light emitting functional layer 110 is formed on the pixel electrode (anode) 111 by laminating the hole injecting and transporting layer 60 and the light emitting layer 70 in this order from the pixel electrode (anode) 111 side. Here, the hole injecting and transporting layer 60 is selectively formed in the opening 25a of the first partition wall 25 without being placed on the edge 25b of the first partition wall 25. Yes.

In the present embodiment, which is a bottom emission type, the pixel electrode 111 is formed of a transparent conductive material, and specifically, ITO is suitably used.
The hole injection / transport layer 60 formed on the pixel electrode 111 is made of a cross-linked hole injection / transport polymer in the present invention. Such cross-linked hole injecting and transporting polymers are disclosed in, for example, JP 2000-208254 A (PEDOT (polythiophene resin) + silane coupling agent (γ-glycidyloxypropyltrimethoxysilane)), JP 2006-96974 A. Gazette (cross-linked polymer chain of self-doped conductive polymer containing isothianaphthene skeleton or thiophene skeleton (for example, poly (5-sulfoisothianaphthene-1,3-diyl)), JP-A-9-124943 No. 1 (polysiloxane resin), which is crosslinked and cured by heat treatment to form a film.

  These cross-linked hole injecting and transporting polymers are used by being dissolved or dispersed in an organic solvent suitable for each material. However, when used by dissolving or dispersing in such an organic solvent, the film (hole injection transport layer 60) obtained by thermosetting and insolubilizing it is insolubilized without proceeding with the crosslinking reaction. Unreacted unreacted parts may remain, and the organic solvent may remain. If unreacted portions remain in the hole injection transport layer 60, the unreacted portions are redissolved when the light emitting layer 70 is formed, and the constituent components of the hole injection transport layer 60 and the light emitting layer 70 change. As a result, the hole injecting and transporting layer 60 and the light emitting layer 70 may be deteriorated in characteristics. In addition, the organic solvent remaining in the hole injecting and transporting layer 60 may move to the light emitting layer 70 side when the light emitting layer 70 is formed, and the light emitting characteristics of the resulting light emitting layer 70 may be deteriorated.

  Therefore, when the hole injecting and transporting layer 60 is formed from a hole injecting and transporting polymer that has been cross-linked using an organic solvent, the cross-linked hole injecting and transporting that is cured and insolubilized by heat treatment as described later The polymer film is further rinsed with a solvent, and the film after this treatment is used as a hole injecting and transporting layer 60. As described above, the hole injecting and transporting layer 60 obtained by the rinsing process does not remain on the edge 25b of the first partition wall 25, that is, the region surrounded by the first partition wall 25, that is, It is selectively formed only in the opening 25a. The mechanism by which the hole injection / transport layer 60 can be selectively formed in the opening 25a as described above has not been sufficiently elucidated so far. However, as will be described later, at least the temperature and time of the heat treatment for insolubilization are appropriately set so that the hole injecting and transporting layer 60 made of a cross-linked hole injecting and transporting polymer has the edge portion. It can be selectively formed in the opening 25a without leaving on the 25b.

A light emitting layer 70 is formed on the hole injecting and transporting layer 60. As a material for forming the light emitting layer 70, a known light emitting material capable of emitting fluorescence or phosphorescence is used. Specific examples of the material for forming the light emitting layer 70 include (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), and polyvinylcarbazole (PVK). ), Polythiophene derivatives, and polysilanes such as polymethylphenylsilane (PMPS) are preferably used. In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as.
In addition, as a material for forming such a light emitting layer 70, in particular, in the case of full color display, a material that emits light corresponding to each of the red, green, and blue wavelength ranges is used, and each of the materials is set in advance. Is formed and arranged.

As shown in FIG. 3, the cathode 12 is formed so as to cover the light emitting layer 70. For example, Ca is formed to a thickness of about 5 nm, and Al is formed to a thickness of about 300 nm thereon. It is a thing. Since the electrode has such a laminated structure, particularly Al functions as a reflective layer. If a transparent material is used for the cathode 12 as well, the emitted light can be emitted from the cathode side. As the transparent material, ITO, Pt, Ir, Ni, or Pd can be used. The film thickness is preferably about 75 nm in order to ensure transparency, and more preferably thinner than this film thickness.
Further, a sealing substrate (not shown) is stuck on the cathode 12 via an adhesive layer 51.

  Here, the hole injecting and transporting layer 60 in the light emitting functional layer 110 has a function of injecting holes into the light emitting layer 70 and also has a function of transporting holes in the hole injecting and transporting layer 60. Yes. Therefore, by providing such a hole injecting and transporting layer 60 between the pixel electrode 111 and the light emitting layer 70, in the light emitting layer 70, the hole injecting and transporting layer 60 is only in the portion directly above the hole injecting and transporting layer 60. The holes injected from the above and the electrons injected from the cathode 12 are recombined to emit light.

  Therefore, the light emitting region of the pixel corresponding to one pixel electrode 111 is not the region L2 defined by the opening 221a of the second partition 221 in which the light emitting layer 70 is formed, as shown in FIG. This is the region L1 defined by the opening 25a of the first partition wall 25 in which the hole injecting and transporting layer 60 is formed. Accordingly, the edge 25b of the first partition wall 25 is not included in the light emitting region, and the light emitting region is defined by the mechanically formed opening 25a. When compared, the size (light emitting area) of the light emitting region is uniform and uniform, thereby preventing uneven light emission between pixels and improving the light emitting characteristics.

(Method for manufacturing organic EL device)
Next, based on the manufacturing method of the organic EL device 1 having such a configuration, an embodiment of the manufacturing method of the organic EL device of the present invention will be described. In this manufacturing method, first, the circuit element portion 14 is formed on the substrate 2 in the same manner as in the prior art. And the transparent conductive film used as the pixel electrode 111 is formed with ITO so that the whole surface of the board | substrate 2 may be covered. Next, the conductive film is patterned to form a pixel electrode 111 that is electrically connected to the drain electrode 244 through the contact hole 111a of the planarization film 284 as shown in FIG.

Next, a silicon-based insulating material such as SiO _{2 is} formed on the pixel electrode 111 and the planarizing film 284 by a CVD method or the like to form a partition layer (not shown) having a thickness of about 50 nm. The partition wall layer is patterned using a known photolithography technique and etching technique. As a result, as shown in FIG. 5B, an opening 25a (not shown) is formed for each pixel region of each organic EL element 3 to be formed, and at the same time, a first partition 25 is formed.

  Next, an organic resin material is formed on the first partition wall 25 and the pixel electrode 111 to form a partition layer (not shown) having a thickness of about 2 μm. Subsequently, a known photolithography technique and etching technique are formed. Is used to pattern the partition wall layer. As a result, as shown in FIG. 5C, the organic resin is exposed with the edge 25b of the first partition wall 25 exposed at a predetermined position on the first partition wall 25, specifically, a position surrounding the pixel region. A second partition 221 made of a material is formed.

Next, the surface on which the pixel electrode 111, the first partition wall 25, and the second partition wall 221 are formed in this manner is subjected to oxygen plasma treatment, and contaminants such as organic substances attached to the surface are removed to improve wettability. Improve and lyophilic. Subsequently, plasma treatment (CF ₄ plasma treatment) using tetrafluoromethane (carbon tetrafluoride) as a reaction gas is performed in an air atmosphere to reduce the wettability of the second partition wall 221 and make it liquid repellent. Note that the exposed surfaces of the pixel electrode 111 and the first partition wall 25 are also somewhat affected by this CF ₄ plasma treatment, but their lyophilicity is hardly affected.

  Next, a hole injecting and transporting layer 60 is formed in a region surrounded by the first partition wall 25. In the step of forming the hole injecting and transporting layer 60, a spin coating method or a droplet discharging method is employed. In this embodiment, holes are formed in a region surrounded by the second partition 221 and the first partition 25. In particular, an inkjet method, which is a droplet discharge method, is preferably employed because the material for forming the injection transport layer 60 needs to be selectively provided. That is, by this ink jet method, a liquid hole injecting and transporting material is disposed (applied) in a thickness of about 50 nm in the opening 221a of the second partition 221. As the hole injecting and transporting material, a material obtained by dissolving the hole injecting and transporting polymer containing the above-described thermally crosslinkable material in an organic solvent suitable for the material is used. When the hole injecting and transporting material is arranged in this way, the first partition 25 is lyophilic, and the hole injecting and transporting material is placed on the edge 25b. .

  Next, the hole injecting and transporting material is heat-treated at 200 ° C. for about 10 minutes in a nitrogen atmosphere. Then, the organic solvent in the material is vaporized and removed by this heat treatment. In addition, the hole injecting / transporting polymer containing a thermally crosslinkable material undergoes a crosslinking reaction by heat treatment and becomes insoluble in a solvent by bonding in a network. That is, the hole injecting and transporting material is insolubilized by heat treatment. Note that the film (not shown) made of the hole injecting and transporting material insolubilized in this way is partially placed on the edge 25b of the first partition wall 25. However, the rising thickness and amount can be sufficiently reduced by appropriately setting the heat treatment conditions of the hole injecting and transporting material, thereby removing the rising amount by the rinsing process described later. It becomes possible to do. Specifically, by reducing the insolubilization degree (crosslinking degree) by lowering the heating temperature or shortening the heating time, the amount of dissolution / removal in the rinsing treatment can be increased.

  Next, by rinsing the film made of the insolubilized hole injecting and transporting material, as shown in FIG. 6A, only the region surrounded by the first partition wall 25 (inside the opening 25a). In addition, a hole injecting and transporting layer 60 made of a crosslinked hole injecting and transporting polymer having a thickness of about 5 nm to 50 nm is selectively formed. That is, the rinsing process does not proceed with the crosslinking reaction but redissolves and removes the insoluble portion. As a result, the hole injecting and transporting material does not remain on the edge 25b of the first partition wall 25 but remains only in the opening 25a of the first partition wall 25, and hole injection into the opening 25a. A transport layer 60 is selectively formed.

Here, in the rinsing treatment, it is preferable to use a solvent contained in the material for forming the light emitting layer 70 as the solvent. In this way, when the light emitting layer 70 is formed on the hole injecting and transporting layer 60 by the liquid phase method, the hole injecting and transporting layer 60 is redissolved by the solvent contained in the material for forming the light emitting layer 70. This is because it can be prevented.
In addition, after the formation process of this hole injection transport layer 60, it is preferable to carry out in inert gas atmospheres, such as nitrogen atmosphere and argon atmosphere, in order to prevent oxidation and moisture absorption of various formation materials and the formed element.

  Next, as shown in FIG. 6B, a light emitting layer 70 is formed on the hole injecting and transporting layer 60. In the step of forming the light emitting layer 70, an ink jet method which is a droplet discharge method is suitably employed, as in the case of forming the hole injecting and transporting layer 60 described above. That is, the material for forming the light emitting layer is ejected onto the hole injecting and transporting layer 60 by an ink jet method, and then heat treatment is performed at 100 ° C. for about 1 hour in a nitrogen atmosphere. The light emitting layer 70 is formed in the opening 221 a of the second partition 221. In addition, as a solvent used in the formation material of the light emitting layer 70, the thing used for the said rinse process as mentioned above is used suitably.

Next, as shown in FIG. 6C, the cathode 12 is formed by stacking, for example, calcium with a thickness of about 5 nm and aluminum with a thickness of about 300 nm so as to cover the light emitting layer 70 and the second partition 221. In forming the cathode 12, for example, lithium fluoride may be formed on the light emitting layer 70 side as an electron injection layer in order to cause the organic EL element 3 to emit light efficiently. Further, in the formation of the cathode 12, unlike the formation of the hole injecting and transporting layer 60 and the light emitting layer 70, the cathode 12 is not selectively formed only in the pixel region by the vapor deposition method or the sputtering method. 2 is formed on almost the entire surface of 2.
Thereafter, an adhesive layer 51 is formed on the cathode 12, and a sealing substrate (not shown) is further adhered by the adhesive layer 51 to perform sealing. Thereby, the organic EL device 1 of the present embodiment is obtained.

  According to such a method for manufacturing the organic EL device 1, a liquid hole injection / transport material containing a hole injection / transport polymer containing a thermally crosslinkable material in the opening 25 a of the first partition wall 25. Then, this is heat-treated, so that the hole injecting / transporting polymer containing the thermally crosslinkable material undergoes a cross-linking reaction by heat treatment and becomes insolubilized in the solvent by bonding in a network. In addition, after the insolubilization, a rinsing process is performed with a solvent or the like, so that the uninsolubilized portion is re-dissolved and removed without the crosslinking reaction proceeding. As a result, the hole injecting and transporting made of the hole injecting and transporting polymer that is cross-linked only in the opening 25a of the first partition 25 is left on the edge 25b of the first partition 25. Layer 60 can be selectively formed.

  Therefore, as described above, the substantial light emitting region of each pixel can be the region L1 defined by the size of the opening 25a of the first partition wall 25 shown in FIG. Thus, the size of the light emitting region (light emitting area) can be made uniform, uneven light emission between pixels can be prevented, color unevenness and life difference can be suppressed, and light emission characteristics can be improved. Therefore, the organic EL device 1 obtained in this way is suitable as a light source in an image forming apparatus (printer), for example, because the light emitting area for each pixel is uniformly controlled.

(Experimental example)
A spin coating method was used as a method for forming the hole injection transport layer 60, and a green fluorescent material was used as a material for forming the light emitting layer 70, and this was formed by a spin coating method. Except for this, an organic EL device as a product of the present invention was fabricated in substantially the same manner as in the manufacturing method described above.
However, the hole injecting and transporting layer 60 of Experimental Examples 1 to 4 was formed using the following materials.
"Experimental product example 1"
The hole-injecting and transporting layer 60 is formed using 3,4-polyethylenedioxythiophene-polystyrene sulfonic acid (PEDOT / PSS), γ-glycidyloxypropyltrimethoxysilane as a silane coupling agent, and 10% methanol-added water as a solvent. Formed. (Refer to JP 2000-208254 A)
"Experimental product example 2"
The hole injection transport layer 60 was formed using poly (5-sulfoisothianaphthene-1,3-diyl) and 10% methanol-added water as a solvent. (See JP 2006-96974)
"Example 3 of experimental products"
The hole injecting and transporting layer 60 is made of a methyl polysiloxane resin (polysiloxane resin comprising 80 mol% of methylsiloxane units and 20 mol% of dimethylsiloxane units, methyltri (methoxy) silane, dibutyltin diacetate, 4- [2 -(Triethoxysilyl) ethyl] triphenylamine), and formed using toluene as the solvent.
(See Japanese Patent Application Laid-Open No. 9-124943)

Moreover, as the comparative product 1, the hole injection transport layer 60 was formed of general 3,4-polyethylenedioxythiophene-polystyrene sulfonic acid (PEDOT / PSS). The hole injecting and transporting layer 60 was formed on the edge 25b of the first partition wall 25. Other than this, an organic EL device as a comparative product 1 was produced in the same manner as the organic EL device as the product of the present invention described above.
Further, as a comparative product 2, a film made of a hole injecting and transporting material that was just heat-treated without rinsing in the production of the product of the present invention was used as the hole injecting and transporting layer 60 as it was. This hole injecting and transporting layer 60 was also formed on the edge 25b of the first partition 25. Other than this, an organic EL device as a comparative product 2 was produced in the same manner as the organic EL device as the product of the present invention described above.

  Each of the organic EL devices thus produced was allowed to emit light, and the light emission characteristics were examined visually. As a result, the organic EL device of the present invention showed no emission variation between pixels. On the other hand, in the comparative product 1 and the comparative product 2, variation in the emission diameter between pixels was recognized. Such a variation in emission diameter is considered to be due to the hole injection / transport layer 60 being formed on the edge 25b of the first partition wall 25.

(Electronics)
Next, a specific example of an electronic apparatus provided with the organic EL device 1 of the present embodiment will be described.
FIG. 7A is a perspective view showing an example of a mobile phone. In FIG. 7A, reference numeral 1000 indicates a mobile phone body, and reference numeral 1001 indicates a display unit including the organic EL device 1.
FIG. 7B is a perspective view showing an example of a wristwatch type electronic device. In FIG. 7B, reference numeral 1100 indicates a watch body, and reference numeral 1101 indicates a display unit including the organic EL device 1.
FIG. 7C is a perspective view illustrating an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 7C, reference numeral 1200 denotes an information processing apparatus, reference numeral 1202 denotes an input unit such as a keyboard, reference numeral 1204 denotes an information processing apparatus body, and reference numeral 1206 denotes a display unit including the organic EL device 1.
FIG. 7D is a perspective view showing an example of a thin large-screen television. In FIG. 7D, the thin large-screen television 1300 includes a thin large-screen television main body (housing) 1302, an audio output unit 1304 such as a speaker, and a display unit 1306 including the organic EL device 1.

  Since the electronic devices 1000, 1100, 1200, and 1300 shown in FIGS. 7A to 7D include the organic EL device 1, the display units 1001, 1101, 1206, and 1306 made of the organic EL device 1 are included. As described above, unevenness of light emission between pixels is prevented, and thus the display units 1001, 1101, 1206, and 1306 also have excellent display performance in these electronic devices 1000, 1100, 1200, and 1300 themselves. .

In addition, this invention is not restricted to the said embodiment, In the range which does not deviate from the summary of this invention, it can change suitably.
For example, in the above-described embodiment, an example in which the present invention is applied to a so-called bottom emission type organic EL device that emits light emitted from the light emitting layer 70 from the substrate 2 side is shown. The present invention can also be applied to a so-called top emission type organic EL device that emits light from the stop substrate side.

It is explanatory drawing which shows the wiring structure of the organic electroluminescent apparatus of embodiment. FIG. 2 is a schematic plan view of the organic EL device in FIG. 1. It is a principal part cross-sectional schematic diagram of the organic electroluminescent apparatus of FIG. It is explanatory drawing for demonstrating the principal part structure of the cross-sectional schematic diagram shown in FIG. (A)-(c) is process drawing explaining the manufacturing method of the organic electroluminescent apparatus of FIG. (A)-(c) is process drawing explaining the manufacturing method following FIG. (A)-(d) is a perspective view which shows embodiment of the electronic device of this invention. It is a principal part enlarged view for demonstrating the conventional pixel structure.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Organic EL apparatus, 2 ... Board | substrate, 12 ... Cathode, 25 ... 1st partition, 25a ... Opening part, 25b ... Edge part, 60 ... Hole injection | pouring transport layer, 70 ... Light emitting layer, 110 ... Light emission functional layer , 111... Pixel electrode (anode), 221... Second partition, 221 a.

Claims (4)

In an organic EL device in which a hole injecting and transporting layer and a light emitting layer are disposed in this order between an anode and a cathode,
A first partition made of a silicon-based insulating material is provided on the anode so as to partition the anode by covering the periphery of the anode,
On the first partition, a second partition made of an organic resin material is provided in a state in which the edge portion on the anode side of the first partition is exposed,
A hole injecting and transporting layer made of a cross-linked hole injecting and transporting polymer is placed on the edge of the first partition wall in a region surrounded by the first partition wall on the anode. Arranged without
An organic EL device, wherein the light emitting layer is disposed on the hole injecting and transporting layer. In the method of manufacturing an organic EL device in which a hole injection transport layer and a light emitting layer are disposed in this order between an anode and a cathode,
Forming the anode;
Forming a first partition made of a silicon-based insulating material on the anode to cover the periphery of the anode and partition the anode;
Forming a second partition made of an organic resin material on the first partition in a state where an edge of the first partition on the anode side is exposed;
Disposing a liquid hole injecting and transporting material containing a thermally crosslinkable material in a region surrounded by the first partition on the anode;
A step of heat-treating and insolubilizing the hole injection transport material;
The insolubilized hole injecting and transporting material is rinsed, so that only the region surrounded by the first partition wall is exposed to the heat-crosslinkable material without being placed on the edge of the first partition wall. Selectively forming a hole injecting and transporting layer,
And a step of forming the light emitting layer on the hole injecting and transporting layer.   The rinsing treatment is performed by using a solvent contained in the material for forming the light emitting layer and removing components dissolved in the solvent from the insolubilized hole injecting and transporting material. The manufacturing method of the organic electroluminescent apparatus of Claim 2.   An electronic device comprising the organic EL device according to claim 1 or the organic EL device obtained by the manufacturing method according to claim 2.

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