JP2012533903A - 半導体発光デバイスのための反射性コンタクト - Google Patents
半導体発光デバイスのための反射性コンタクト Download PDFInfo
- Publication number
- JP2012533903A JP2012533903A JP2012521124A JP2012521124A JP2012533903A JP 2012533903 A JP2012533903 A JP 2012533903A JP 2012521124 A JP2012521124 A JP 2012521124A JP 2012521124 A JP2012521124 A JP 2012521124A JP 2012533903 A JP2012533903 A JP 2012533903A
- Authority
- JP
- Japan
- Prior art keywords
- type region
- layer
- light emitting
- reflective
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 49
- 229910052709 silver Inorganic materials 0.000 claims description 33
- 239000004332 silver Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 230000005012 migration Effects 0.000 claims description 9
- 238000013508 migration Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 229910017150 AlTi Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 60
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 18
- 230000001681 protective effect Effects 0.000 description 14
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000009791 electrochemical migration reaction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- -1 thicknesses Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000004210 cathodic protection Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (13)
- n型領域とp型領域との間に配された発光層を含む半導体構造と、
前記p型領域上に配されたp側電極と
を含むデバイスであって、
前記p側電極が、
− 前記p型領域の第1の部分と直接接触する反射性の第1の材料と、
− 前記第1の部分に隣接する前記p型領域の第2の部分と直接接触する第2の材料とを含み、
前記第1の材料および前記第2の材料が、実質的に同一の厚さのプラナー状の層として形成されていることを特徴とするデバイス。 - 前記第1の材料が銀を含むことを特徴とする請求項1記載のデバイス。
- 前記第2の材料がアルミニウムを含むことを特徴とする請求項1記載のデバイス。
- 前記第2の材料が、アルミニウム合金、アルミニウム金属スタック、AlTi、Al2O3/Al二重層およびSiO2/Al二重層のうちの、1つを含むことを特徴とする請求項1記載のデバイス。
- 前記p側電極が、前記第1の材料および前記第2の材料の上に配された第3の材料をさらに含み、前記第3の材料が、前記第1の材料のマイグレーションを防止するように構成されていることを特徴とする請求項1記載のデバイス。
- 前記第3の材料が、チタンおよびタングステンを含むことを特徴とする請求項5記載のデバイス。
- 前記n型領域の一部を露出させるように、前記p型領域および前記発光層の一部がエッチングにより除去され、
前記p型領域の残りの部分がメサを形成し、
前記第2の材料が、前記第1の材料と前記メサのエッジとの間に配されることを特徴とする請求項1記載のデバイス。 - n型領域とp型領域との間に配された発光層を含む半導体構造を成長させ、
前記p型領域上に反射性の第1の材料を形成し、
前記反射性の第1の材料の上にレジスト層を形成し、
前記レジスト層内に空隙を形成するように、該レジスト層をパターン化し、
前記レジスト層の前記空隙に対応する、前記反射性の第1の材料の一部を除去し、
前記レジスト層の残りの部分、および前記反射性の第1の材料を除去することにより露出させられた前記p型領域の一部の上に、第2の材料を形成し、
前記レジスト層の前記残りの部分を除去する各処理を含むことを特徴とする方法。 - 前記第1の材料と前記第2の材料とが、実質的に同一の厚さとされることを特徴とする請求項8記載の方法。
- 前記第1の材料が銀を含むことを特徴とする請求項8記載の方法。
- 前記第2の材料がアルミニウムを含むことを特徴とする請求項8記載の方法。
- 前記第1の材料および前記第2の材料の上に第3の材料を形成する処理をさらに含み、前記第3の材料が、前記第1の材料のマイグレーションを防止するように構成されることを特徴とする請求項8記載の方法。
- 前記第3の材料が、チタンおよびタングステンを含むことを特徴とする請求項12記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/506,632 US8076682B2 (en) | 2009-07-21 | 2009-07-21 | Contact for a semiconductor light emitting device |
US12/506,632 | 2009-07-21 | ||
PCT/IB2010/052894 WO2011010236A1 (en) | 2009-07-21 | 2010-06-24 | Reflective contact for a semiconductor light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012533903A true JP2012533903A (ja) | 2012-12-27 |
Family
ID=42799753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012521124A Pending JP2012533903A (ja) | 2009-07-21 | 2010-06-24 | 半導体発光デバイスのための反射性コンタクト |
Country Status (8)
Country | Link |
---|---|
US (2) | US8076682B2 (ja) |
EP (1) | EP2457266B1 (ja) |
JP (1) | JP2012533903A (ja) |
KR (3) | KR101713187B1 (ja) |
CN (1) | CN102473807B (ja) |
RU (1) | RU2535636C2 (ja) |
TW (2) | TWI625870B (ja) |
WO (1) | WO2011010236A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011112000B4 (de) * | 2011-08-31 | 2023-11-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip |
CN102903817B (zh) * | 2012-10-31 | 2015-04-22 | 安徽三安光电有限公司 | 具有反射电极的发光装置 |
TWI497767B (zh) * | 2013-03-08 | 2015-08-21 | Univ Southern Taiwan Sci & Tec | Ⅲ-ⅴ族發光二極體之電極 |
EP2876035A1 (en) | 2013-11-21 | 2015-05-27 | Reflex Marine Ltd | Device for transferring persons |
RU2710005C1 (ru) * | 2019-04-26 | 2019-12-23 | Акционерное общество "ОКБ-Планета" АО "ОКБ-Планета" | Способ монтажа полупроводниковых кристаллов в корпус |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003007390A1 (fr) * | 2001-07-12 | 2003-01-23 | Nichia Corporation | Dispositif semi-conducteur |
JP2007335793A (ja) * | 2006-06-19 | 2007-12-27 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
JP2008305874A (ja) * | 2007-06-06 | 2008-12-18 | Sony Corp | 発光素子における電極構造の形成方法、及び、積層構造体の形成方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5831731B2 (ja) | 1978-11-20 | 1983-07-08 | 富士通株式会社 | 配線形成方法 |
US4564997A (en) * | 1981-04-21 | 1986-01-21 | Nippon-Telegraph And Telephone Public Corporation | Semiconductor device and manufacturing process thereof |
US6194743B1 (en) * | 1997-12-15 | 2001-02-27 | Agilent Technologies, Inc. | Nitride semiconductor light emitting device having a silver p-contact |
JP4024994B2 (ja) | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
US6946685B1 (en) * | 2000-08-31 | 2005-09-20 | Lumileds Lighting U.S., Llc | Light emitting semiconductor method and device |
RU2286618C2 (ru) * | 2002-07-16 | 2006-10-27 | Борис Анатольевич Матвеев | Полупроводниковый диод для инфракрасного диапазона спектра |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US8174037B2 (en) * | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US8318519B2 (en) * | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
CN101882657A (zh) * | 2005-10-29 | 2010-11-10 | 三星电子株式会社 | 半导体器件及其制造方法 |
JP2007157853A (ja) | 2005-12-01 | 2007-06-21 | Sony Corp | 半導体発光素子およびその製造方法 |
US7737455B2 (en) * | 2006-05-19 | 2010-06-15 | Bridgelux, Inc. | Electrode structures for LEDs with increased active area |
JP2008192782A (ja) * | 2007-02-05 | 2008-08-21 | Toyota Central R&D Labs Inc | 電極及びそれを有するiii族窒化物系化合物半導体発光素子 |
JP2009049267A (ja) * | 2007-08-22 | 2009-03-05 | Toshiba Corp | 半導体発光素子及びその製造方法 |
DE102007046519A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung |
JP5325506B2 (ja) * | 2008-09-03 | 2013-10-23 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
-
2009
- 2009-07-21 US US12/506,632 patent/US8076682B2/en active Active
-
2010
- 2010-06-24 WO PCT/IB2010/052894 patent/WO2011010236A1/en active Application Filing
- 2010-06-24 KR KR1020127004369A patent/KR101713187B1/ko active IP Right Grant
- 2010-06-24 KR KR1020177005769A patent/KR20170026666A/ko active Application Filing
- 2010-06-24 KR KR1020187013623A patent/KR101991961B1/ko active IP Right Grant
- 2010-06-24 EP EP10734315.4A patent/EP2457266B1/en active Active
- 2010-06-24 RU RU2012105987/28A patent/RU2535636C2/ru active
- 2010-06-24 CN CN201080032980.3A patent/CN102473807B/zh active Active
- 2010-06-24 JP JP2012521124A patent/JP2012533903A/ja active Pending
- 2010-07-16 TW TW105135131A patent/TWI625870B/zh active
- 2010-07-16 TW TW099123564A patent/TWI583023B/zh active
-
2011
- 2011-11-03 US US13/288,062 patent/US8257989B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003007390A1 (fr) * | 2001-07-12 | 2003-01-23 | Nichia Corporation | Dispositif semi-conducteur |
JP2007335793A (ja) * | 2006-06-19 | 2007-12-27 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
JP2008305874A (ja) * | 2007-06-06 | 2008-12-18 | Sony Corp | 発光素子における電極構造の形成方法、及び、積層構造体の形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101991961B1 (ko) | 2019-06-25 |
US20110018015A1 (en) | 2011-01-27 |
RU2012105987A (ru) | 2013-08-27 |
TWI625870B (zh) | 2018-06-01 |
KR20170026666A (ko) | 2017-03-08 |
KR101713187B1 (ko) | 2017-03-07 |
KR20180053435A (ko) | 2018-05-21 |
TW201123541A (en) | 2011-07-01 |
US8257989B2 (en) | 2012-09-04 |
WO2011010236A1 (en) | 2011-01-27 |
RU2535636C2 (ru) | 2014-12-20 |
CN102473807B (zh) | 2015-05-20 |
US8076682B2 (en) | 2011-12-13 |
TWI583023B (zh) | 2017-05-11 |
CN102473807A (zh) | 2012-05-23 |
KR20120049282A (ko) | 2012-05-16 |
TW201707238A (zh) | 2017-02-16 |
EP2457266A1 (en) | 2012-05-30 |
US20120045858A1 (en) | 2012-02-23 |
EP2457266B1 (en) | 2018-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11658273B2 (en) | Passivation for a semiconductor light emitting device | |
US7233028B2 (en) | Gallium nitride material devices and methods of forming the same | |
US8004006B2 (en) | Nitride semiconductor light emitting element | |
US8202741B2 (en) | Method of bonding a semiconductor device using a compliant bonding structure | |
US20120074384A1 (en) | Protection for the epitaxial structure of metal devices | |
US8257989B2 (en) | Contact for a semiconductor light emitting device | |
US20120074457A1 (en) | Semiconductor light emitting device with a contact formed on a textured surface | |
JP2010165983A (ja) | 発光チップ集積デバイスおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130618 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140220 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140605 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140829 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140905 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141202 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150424 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150525 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20150605 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20150703 |