JP2012533737A - パターン付き層上における改良された感度のための光学的欠陥増幅 - Google Patents
パターン付き層上における改良された感度のための光学的欠陥増幅 Download PDFInfo
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- JP2012533737A JP2012533737A JP2012520785A JP2012520785A JP2012533737A JP 2012533737 A JP2012533737 A JP 2012533737A JP 2012520785 A JP2012520785 A JP 2012520785A JP 2012520785 A JP2012520785 A JP 2012520785A JP 2012533737 A JP2012533737 A JP 2012533737A
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- inspection
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Links
- 230000007547 defect Effects 0.000 title claims abstract description 70
- 230000035945 sensitivity Effects 0.000 title description 8
- 230000003287 optical effect Effects 0.000 title description 7
- 230000003321 amplification Effects 0.000 title 1
- 238000003199 nucleic acid amplification method Methods 0.000 title 1
- 238000007689 inspection Methods 0.000 claims abstract description 297
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims description 40
- 238000012360 testing method Methods 0.000 claims description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 230000000694 effects Effects 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 8
- 238000012546 transfer Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 239000000975 dye Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 95
- 235000012431 wafers Nutrition 0.000 description 38
- 230000006870 function Effects 0.000 description 24
- 230000004044 response Effects 0.000 description 18
- 230000008569 process Effects 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 8
- 238000004590 computer program Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000001127 nanoimprint lithography Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22626009P | 2009-07-16 | 2009-07-16 | |
| US61/226,260 | 2009-07-16 | ||
| PCT/US2010/042148 WO2011008964A1 (en) | 2009-07-16 | 2010-07-15 | Optical defect amplification for improved sensitivity on patterned layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012533737A true JP2012533737A (ja) | 2012-12-27 |
| JP2012533737A5 JP2012533737A5 (https=) | 2013-08-29 |
Family
ID=43449792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012520785A Pending JP2012533737A (ja) | 2009-07-16 | 2010-07-15 | パターン付き層上における改良された感度のための光学的欠陥増幅 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8705027B2 (https=) |
| JP (1) | JP2012533737A (https=) |
| KR (1) | KR101765348B1 (https=) |
| IL (1) | IL216974A0 (https=) |
| WO (1) | WO2011008964A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10317347B2 (en) | 2013-11-01 | 2019-06-11 | Kla-Tencor Corp. | Determining information for defects on wafers |
| US9599573B2 (en) | 2014-12-02 | 2017-03-21 | Kla-Tencor Corporation | Inspection systems and techniques with enhanced detection |
| WO2016103286A1 (en) * | 2014-12-24 | 2016-06-30 | Datalogic Ip Tech S.R.L. | System and method for identifying the presence or absence of transparent pills in blister packer machines using high resolution 3d stereo reconstruction based on color linear cameras |
| US9870612B2 (en) * | 2016-06-06 | 2018-01-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for repairing a mask |
| US10249546B2 (en) | 2016-07-20 | 2019-04-02 | Kla-Tencor Corporation | Reverse decoration for defect detection amplification |
| WO2018081144A1 (en) | 2016-10-24 | 2018-05-03 | Kla-Tencor Corporation | Process module(s) integrated into a metrology and/or inspection tool |
| US10795270B2 (en) * | 2017-08-25 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods of defect inspection |
| US10615067B2 (en) * | 2018-05-18 | 2020-04-07 | Kla-Tencor Corporation | Phase filter for enhanced defect detection in multilayer structure |
| US11092893B2 (en) * | 2018-12-10 | 2021-08-17 | Kla Corporation | Inspection sensitivity improvements for optical and electron beam inspection |
| TWI753739B (zh) * | 2021-01-08 | 2022-01-21 | 閎康科技股份有限公司 | 物性分析方法、物性分析試片及其製備方法 |
| US12066763B2 (en) * | 2021-02-04 | 2024-08-20 | Kla Corporation | Sensitivity improvement of optical and SEM defection inspection |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834345A (ja) * | 1981-08-25 | 1983-02-28 | Fujitsu Ltd | レジスト膜パタ−ンの検査方法 |
| JPS61161796A (ja) * | 1985-01-10 | 1986-07-22 | 富士通株式会社 | プリント基板の導体パタ−ンの表面処理方法 |
| JPH02190705A (ja) * | 1989-01-20 | 1990-07-26 | Hitachi Ltd | 外観検査方法 |
| JPH06300530A (ja) * | 1993-03-27 | 1994-10-28 | Boehringer Mannheim Gmbh | 横方向に不均質な極薄物体層を横方向に解像して検査する装置 |
| JPH09115973A (ja) * | 1995-10-16 | 1997-05-02 | Nec Corp | 異物検査方法 |
| JPH1012681A (ja) * | 1996-06-21 | 1998-01-16 | Fujitsu Ltd | 層間の空隙の検出方法 |
| JP2007170960A (ja) * | 2005-12-21 | 2007-07-05 | Kobe Steel Ltd | 熱弾性特性測定装置、熱弾性特性測定方法 |
| JP2008082999A (ja) * | 2006-09-29 | 2008-04-10 | Hitachi Ltd | 基板表面の欠陥検査方法及び欠陥検査装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4722244B2 (ja) * | 1998-07-14 | 2011-07-13 | ノバ・メジャリング・インストルメンツ・リミテッド | 所定のフォトリソグラフィ工程に従って基板を加工する装置 |
| WO2000075727A2 (en) * | 1999-06-07 | 2000-12-14 | The Regents Of The University Of California | Coatings on reflective mask substrates |
| JP3729156B2 (ja) * | 2002-06-07 | 2005-12-21 | 株式会社日立製作所 | パターン欠陥検出方法およびその装置 |
| AU2003272829A1 (en) * | 2002-10-03 | 2004-04-23 | Applied Materials Israel, Ltd. | System and method for defect localization on electrical test structures |
| DE10301931A1 (de) | 2003-01-19 | 2004-07-29 | Massen, Robert, Prof. Dr.-Ing. | Automatische optische Oberflächeninspektion von farbig gemusterten Oberflächen, welche mit einer transparenten Schutzschicht versehen sind |
| JP4778755B2 (ja) | 2005-09-09 | 2011-09-21 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びこれを用いた装置 |
| US7791055B2 (en) | 2006-07-10 | 2010-09-07 | Micron Technology, Inc. | Electron induced chemical etching/deposition for enhanced detection of surface defects |
| US20080311283A1 (en) | 2007-06-15 | 2008-12-18 | Qimonda Ag | Method of Inspecting and Manufacturing an Integrated Circuit |
| DE102007028800B4 (de) | 2007-06-22 | 2016-11-03 | Advanced Mask Technology Center Gmbh & Co. Kg | Maskensubstrat, Photomaske und Verfahren zur Herstellung einer Photomaske |
-
2010
- 2010-07-15 US US13/384,330 patent/US8705027B2/en active Active
- 2010-07-15 WO PCT/US2010/042148 patent/WO2011008964A1/en not_active Ceased
- 2010-07-15 JP JP2012520785A patent/JP2012533737A/ja active Pending
- 2010-07-15 KR KR1020127004026A patent/KR101765348B1/ko active Active
-
2011
- 2011-12-14 IL IL216974A patent/IL216974A0/en active IP Right Grant
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834345A (ja) * | 1981-08-25 | 1983-02-28 | Fujitsu Ltd | レジスト膜パタ−ンの検査方法 |
| JPS61161796A (ja) * | 1985-01-10 | 1986-07-22 | 富士通株式会社 | プリント基板の導体パタ−ンの表面処理方法 |
| JPH02190705A (ja) * | 1989-01-20 | 1990-07-26 | Hitachi Ltd | 外観検査方法 |
| JPH06300530A (ja) * | 1993-03-27 | 1994-10-28 | Boehringer Mannheim Gmbh | 横方向に不均質な極薄物体層を横方向に解像して検査する装置 |
| JPH09115973A (ja) * | 1995-10-16 | 1997-05-02 | Nec Corp | 異物検査方法 |
| JPH1012681A (ja) * | 1996-06-21 | 1998-01-16 | Fujitsu Ltd | 層間の空隙の検出方法 |
| JP2007170960A (ja) * | 2005-12-21 | 2007-07-05 | Kobe Steel Ltd | 熱弾性特性測定装置、熱弾性特性測定方法 |
| JP2008082999A (ja) * | 2006-09-29 | 2008-04-10 | Hitachi Ltd | 基板表面の欠陥検査方法及び欠陥検査装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8705027B2 (en) | 2014-04-22 |
| IL216974A0 (en) | 2012-02-29 |
| US20120113416A1 (en) | 2012-05-10 |
| WO2011008964A1 (en) | 2011-01-20 |
| KR20120037010A (ko) | 2012-04-18 |
| KR101765348B1 (ko) | 2017-08-08 |
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