JP2012531057A - 透明な整流性の金属−金属酸化物−半導体接触構造およびその製造方法および使用 - Google Patents
透明な整流性の金属−金属酸化物−半導体接触構造およびその製造方法および使用 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 46
- 239000002184 metal Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 31
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims abstract description 25
- 150000004767 nitrides Chemical class 0.000 claims abstract description 16
- 229910052976 metal sulfide Inorganic materials 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 230000005693 optoelectronics Effects 0.000 claims abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 27
- 239000011787 zinc oxide Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- -1 CuAlO 2 Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 4
- 229910003363 ZnMgO Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 4
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 claims description 4
- 239000013590 bulk material Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 150000003568 thioethers Chemical class 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 claims description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 239000002086 nanomaterial Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000004549 pulsed laser deposition Methods 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
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- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
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- 238000005755 formation reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
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- 239000012811 non-conductive material Substances 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
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- 238000004528 spin coating Methods 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
Description
a)好ましくは透明で、好ましくは半導体層として形成された半導体と、
b)透明な金属酸化物、透明な金属窒化物、または透明な金属硫化物の層と、
c)透明な導電体の層と
を上記の順番で有する整流性接触構造を開示する。
a)透明な半導体と、
b)透明な金属酸化物、透明な金属窒化物、または透明な金属硫化物と、
c)透明な導電体と
のうち少なくとも1つが、それ自体もまた複数の層から構成されていることが好ましい。
パルスレーザ堆積(PLD)により、a−サファイア基板上に約1マイクロメートル厚の酸化亜鉛層が堆積される。表面前処理をせずに、アルゴン/酸素雰囲気中での銀の反応性スパッタリングにより、透明なAgxO点接触部(厚さ<10nm)が被覆され、この点接触部が、透明な金層(厚さ<5nm)で覆われる。
パルスレーザ堆積(PLD)により、a−サファイア基板上に約20nm厚の酸化亜鉛層が堆積される。この層から、エッチングによりメサ(Mesa)が加工される。上述の接触部に基づき、銀の反応性スパッタリングによりメサ上に透明なAgxOゲート接触部が被覆される。続いてPLDにより、透明でアルミニウムをドープされた高伝導性酸化亜鉛が上張層として被覆される。ソース接触部およびドレイン接触部も、透明でアルミニウムをドープされた高伝導性酸化亜鉛のPLDにより製造される。
Claims (17)
- 下記の構成要素
a)ZnO、ダイヤモンド、ZnMgO、CuAlO2、ZnS、ZnSe、ZnCdO、Ga2O3、In2O3、および有機半導体を含むワイドバンドギャップ半導体群から選択された透明な半導体と、
b)金属酸化物、金属硫化物、および/または金属窒化物から成り、透明で絶縁性でなく伝導性でなく、固有抵抗が好ましくは102Ωcm〜107Ωcmの範囲内である層と、
c)透明な導電体から成る層と
を有する透明な整流性接触構造であって、
層b)が半導体a)と層c)の間に形成されている透明な整流性接触構造。 - 層b)が、Ag、Pt、Ir、Cu、Pd、Cr、Ni、およびその他の金属を含む群から選択された金属の酸化物、硫化物、または窒化物を有することを特徴とする請求項1に記載の透明な整流性接触構造。
- センサ技術での用途における透明な整流性接触構造の使用であって、下記の構成要素
a)透明な半導体と、
b)Ag、Pt、Ir、Cu、Pd、Cr、およびその他の金属を含む群から選択された金属の酸化物、硫化物、または窒化物から成り、透明で絶縁性でなく伝導性でなく、固有抵抗が好ましくは102Ωcm〜107Ωcmの範囲内である層と、
c)透明な導電体から成る層と
を有しており、層b)が半導体a)と層c)の間に形成されている透明な整流性接触構造の使用。 - 半導体a)が、バルク材料として、薄層として、またはナノ構造として形成されていることを特徴とする請求項1もしくは2に記載の透明な整流性接触構造または請求項3に記載の使用。
- 基板が透明および/または柔軟であることを特徴とする請求項2もしくは4に記載の透明な整流性接触構造または請求項3もしくは4に記載の使用。
- 半導体a)が、ドープされており、かつ/または混合されており、かつ/または合金化されており、かつ/またはヘテロ構造を有することを特徴とする請求項1、2、4、もしくは5のいずれか一つに記載の透明な整流性接触構造または請求項3〜5のいずれか一つに記載の使用。
- 層b)が複数の層から成ることを特徴とする請求項1、2、もしくは4〜6のいずれか一つに記載の透明な整流性接触構造または請求項3〜6のいずれか一つに記載の使用。
- 層b)が、化学量論比により定められるより多くの金属原子を含むことを特徴とする請求項1、2、もしくは4〜7のいずれか一つに記載の透明な整流性接触構造または請求項3〜7のいずれか一つに記載の使用。
- 層c)が、下記の材料
i)透明伝導性酸化物、好ましくはインジウムスズ酸化物(Indium Tin Oxide、ITO)、フッ素スズ酸化物(Fluor Tin Oxide、FTO)、アルミニウム亜鉛酸化物(Aluminium Zinc Oxide、AZO)、およびアンチモンスズ酸化物(Antimony Tin Oxide、ATO)を含む群から選択された透明伝導性酸化物および/または
ii)Au、Ag、Pt、Cu、Inを含む群からの金属および/または
iii)有機伝導性材料
の少なくとも1つを有することを特徴とする請求項1、2、もしくは4〜8のいずれか一つに記載の透明な整流性接触構造または請求項3〜8のいずれか一つに記載の使用。 - 層c)が、ドープされており、かつ/または混合物であり、かつ/または合金化されており、かつ/または複数の層から成ることを特徴とする請求項9に記載の透明な整流性接触構造または使用。
- 層c)が、化学量論比により定められるより多くの金属原子を含む金属酸化物を有することを特徴とする請求項9または10のいずれか一つに記載の透明な整流性接触構造または使用。
- 透明な整流性接触構造の製造方法であって、
ZnO、ダイヤモンド、ZnMgO、CuAlO2、ZnS、ZnSe、ZnCdO、Ga2O3、In2O3、および有機半導体を含むワイドバンドギャップ半導体群から選択された透明な半導体a)を準備するステップ、
金属酸化物、金属硫化物、および/または金属窒化物の透明で絶縁性でなく伝導性でなく、固有抵抗が好ましくは102Ωcm〜107Ωcmの範囲内である層b)を、半導体a)の選択された領域上に被覆するステップ、
透明な導電体の層c)を半導体a)の選択された領域上に被覆し、その際、層c)が層b)により半導体a)から隔てられているステップ
を有する方法。 - センサ技術での用途において使用するための透明な整流性接触構造の製造方法であって、
ZnO、ダイヤモンド、ZnMgO、CuAlO2、ZnS、ZnSe、ZnCdO、Ga2O3、In2O3、および有機半導体を含むワイドバンドギャップ半導体群から選択された透明な半導体a)を準備するステップ、
Ag、Pt、Ir、Cu、Pd、Cr、およびその他の金属を含む群から選択された金属の酸化物、硫化物、または窒化物から成り、透明で絶縁性でなく伝導性でなく、固有抵抗が好ましくは102Ωcm〜107Ωcmの範囲内である層b)を、半導体a)の選択された領域上に被覆するステップ、
透明な導電体の層c)を半導体a)の選択された領域上に被覆し、その際、層c)が層b)により半導体a)から隔てられているステップ
を有する方法。 - 半導体a)がドープされ、かつ/または半導体a)の表面が洗浄されることを特徴とする請求項12に記載の方法。
- 層b)が、金属層を酸化することによるか、または同じもしくは異なる金属酸化物の複数の層を次々と形成することにより形成されることを特徴とする請求項12または13に記載の方法。
- 層c)が、同じまたは異なる透明な導電体の複数の層を次々と形成することにより形成されることを特徴とする請求項12〜15のいずれか一つに記載の方法。
- 光電子工学、太陽光技術、センサ技術、信号捕捉、信号処理およびデータ処理における、表示素子、ディスプレイ、および集積回路における、請求項1〜11のいずれか一つに記載の透明な整流性接触構造の使用。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015233027A (ja) * | 2013-06-13 | 2015-12-24 | 日本放送協会 | 光電変換素子、光電変換素子の製造方法、積層型固体撮像素子および太陽電池 |
JP2018032699A (ja) * | 2016-08-24 | 2018-03-01 | 株式会社Flosfia | 半導体装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013033909A (ja) * | 2011-06-29 | 2013-02-14 | Hitachi Cable Ltd | 発光素子搭載用基板及びledパッケージ |
ES2471568B1 (es) * | 2012-11-22 | 2015-08-21 | Abengoa Solar New Technologies S.A. | Procedimiento para la creación de contactos eléctricos y contactos así creados |
FR3004853B1 (fr) * | 2013-04-22 | 2016-10-21 | Centre Nat Rech Scient | Procede de fabrication d'une diode schottky sur un substrat en diamant |
CN103326692A (zh) * | 2013-05-28 | 2013-09-25 | 江苏艾伦摩尔微电子科技有限公司 | 一种电调薄膜体声波谐振器及其制备方法 |
AU2014341969B2 (en) * | 2013-11-04 | 2019-07-25 | Columbus Photovoltaics LLC | Photovoltaic cells |
WO2018020902A1 (ja) * | 2016-07-27 | 2018-02-01 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、および電子機器 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0458560A (ja) * | 1990-06-28 | 1992-02-25 | Toshiba Corp | 光電変換素子 |
JPH10341039A (ja) * | 1997-04-10 | 1998-12-22 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JP2003523617A (ja) * | 2000-08-21 | 2003-08-05 | マットサイエンステック カンパニー リミテッド | 紫外線感知素子 |
JP2006332373A (ja) * | 2005-05-26 | 2006-12-07 | Matsushita Electric Ind Co Ltd | 酸化物薄膜太陽電池 |
JP2007019460A (ja) * | 2005-06-08 | 2007-01-25 | Masanobu Isaki | 酸化物薄膜太陽電池 |
JP2007201393A (ja) * | 2005-12-26 | 2007-08-09 | Iwate Information System Corp | 光起電力型紫外線センサ |
US20070206651A1 (en) * | 2004-05-29 | 2007-09-06 | Tzong-Liang Tsai | Light Emitting Diode Structure |
JP2007258468A (ja) * | 2006-03-23 | 2007-10-04 | National Institute Of Advanced Industrial & Technology | 可視光透過半導体素子およびその製造方法 |
JP2008235668A (ja) * | 2007-03-22 | 2008-10-02 | Osaka City | 半導体ダイオード |
WO2008143526A1 (en) * | 2007-05-17 | 2008-11-27 | Canterprise Limited | Contact and method of fabrication |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19729931A1 (de) * | 1997-07-07 | 1999-01-14 | Epigap Optoelektronik Gmbh | Selektive Fotodiode für den UV-Spektralbereich |
US6362483B1 (en) * | 1998-12-29 | 2002-03-26 | The Hong Kong University Of Science & Technology | Visible-blind UV detectors |
KR20000030069A (ko) * | 1999-08-21 | 2000-06-05 | 이정욱 | 자외선 감지소자 |
DE19951207A1 (de) | 1999-10-15 | 2001-04-19 | Twlux Halbleitertechnologien B | Halbleiterbauelement |
US20020008234A1 (en) * | 2000-06-28 | 2002-01-24 | Motorola, Inc. | Mixed-signal semiconductor structure, device including the structure, and methods of forming the device and the structure |
KR100647278B1 (ko) | 2003-10-27 | 2006-11-17 | 삼성전자주식회사 | III - V 족 GaN 계 화합물 반도체 및 이에적용되는 p-형 전극 |
US7923362B2 (en) | 2005-06-08 | 2011-04-12 | Telefunken Semiconductors Gmbh & Co. Kg | Method for manufacturing a metal-semiconductor contact in semiconductor components |
DE102005026301B3 (de) * | 2005-06-08 | 2007-01-11 | Atmel Germany Gmbh | Verfahren zum Herstellen eines Metall- Halbleiter-Kontakts bei Halbleiterbauelementen |
WO2006131990A1 (ja) * | 2005-06-09 | 2006-12-14 | Sumitomo Chemical Company, Limited | 窒化物半導体発光素子およびその製造方法 |
US7341932B2 (en) | 2005-09-30 | 2008-03-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Schottky barrier diode and method thereof |
US7910935B2 (en) * | 2005-12-27 | 2011-03-22 | Samsung Electronics Co., Ltd. | Group-III nitride-based light emitting device |
US20070228505A1 (en) * | 2006-04-04 | 2007-10-04 | Mazzola Michael S | Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making |
-
2009
- 2009-06-22 DE DE102009030045A patent/DE102009030045B3/de not_active Expired - Fee Related
-
2010
- 2010-06-21 EP EP10724871.8A patent/EP2446484B1/de not_active Not-in-force
- 2010-06-21 CN CN201080027873.1A patent/CN102460736B/zh not_active Expired - Fee Related
- 2010-06-21 WO PCT/EP2010/058726 patent/WO2010149616A1/de active Application Filing
- 2010-06-21 KR KR1020127001847A patent/KR101268572B1/ko not_active IP Right Cessation
- 2010-06-21 JP JP2012516683A patent/JP2012531057A/ja active Pending
- 2010-06-21 CA CA2765981A patent/CA2765981C/en not_active Expired - Fee Related
- 2010-06-21 US US13/380,054 patent/US8445904B2/en not_active Expired - Fee Related
- 2010-06-21 PT PT107248718T patent/PT2446484E/pt unknown
-
2014
- 2014-02-21 JP JP2014031391A patent/JP5897621B2/ja not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0458560A (ja) * | 1990-06-28 | 1992-02-25 | Toshiba Corp | 光電変換素子 |
JPH10341039A (ja) * | 1997-04-10 | 1998-12-22 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JP2003523617A (ja) * | 2000-08-21 | 2003-08-05 | マットサイエンステック カンパニー リミテッド | 紫外線感知素子 |
US20070206651A1 (en) * | 2004-05-29 | 2007-09-06 | Tzong-Liang Tsai | Light Emitting Diode Structure |
JP2006332373A (ja) * | 2005-05-26 | 2006-12-07 | Matsushita Electric Ind Co Ltd | 酸化物薄膜太陽電池 |
JP2007019460A (ja) * | 2005-06-08 | 2007-01-25 | Masanobu Isaki | 酸化物薄膜太陽電池 |
JP2007201393A (ja) * | 2005-12-26 | 2007-08-09 | Iwate Information System Corp | 光起電力型紫外線センサ |
JP2007258468A (ja) * | 2006-03-23 | 2007-10-04 | National Institute Of Advanced Industrial & Technology | 可視光透過半導体素子およびその製造方法 |
JP2008235668A (ja) * | 2007-03-22 | 2008-10-02 | Osaka City | 半導体ダイオード |
WO2008143526A1 (en) * | 2007-05-17 | 2008-11-27 | Canterprise Limited | Contact and method of fabrication |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015233027A (ja) * | 2013-06-13 | 2015-12-24 | 日本放送協会 | 光電変換素子、光電変換素子の製造方法、積層型固体撮像素子および太陽電池 |
JP2018032699A (ja) * | 2016-08-24 | 2018-03-01 | 株式会社Flosfia | 半導体装置 |
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JP2014146803A (ja) | 2014-08-14 |
CA2765981C (en) | 2013-03-19 |
KR20120089434A (ko) | 2012-08-10 |
US20120091453A1 (en) | 2012-04-19 |
EP2446484B1 (de) | 2013-05-29 |
PT2446484E (pt) | 2013-08-27 |
WO2010149616A1 (de) | 2010-12-29 |
CN102460736B (zh) | 2014-08-13 |
KR101268572B1 (ko) | 2013-05-28 |
CN102460736A (zh) | 2012-05-16 |
DE102009030045B3 (de) | 2011-01-05 |
US8445904B2 (en) | 2013-05-21 |
EP2446484A1 (de) | 2012-05-02 |
CA2765981A1 (en) | 2010-12-29 |
JP5897621B2 (ja) | 2016-03-30 |
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