JP2012527778A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2012527778A JP2012527778A JP2012511970A JP2012511970A JP2012527778A JP 2012527778 A JP2012527778 A JP 2012527778A JP 2012511970 A JP2012511970 A JP 2012511970A JP 2012511970 A JP2012511970 A JP 2012511970A JP 2012527778 A JP2012527778 A JP 2012527778A
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000010949 copper Substances 0.000 claims abstract description 16
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 20
- 239000000919 ceramic Substances 0.000 claims description 10
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 239000011777 magnesium Substances 0.000 description 12
- 230000000875 corresponding effect Effects 0.000 description 11
- 239000011575 calcium Substances 0.000 description 10
- 229910052788 barium Inorganic materials 0.000 description 9
- 229910052791 calcium Inorganic materials 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 239000002861 polymer material Substances 0.000 description 7
- 229920001296 polysiloxane Polymers 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- -1 aluminum Chemical class 0.000 description 6
- 150000001768 cations Chemical class 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052712 strontium Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 5
- 229910052794 bromium Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 150000004645 aluminates Chemical class 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012777 electrically insulating material Substances 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 229920002959 polymer blend Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- MTCPZNVSDFCBBE-UHFFFAOYSA-N 1,3,5-trichloro-2-(2,6-dichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=CC(Cl)=C1C1=C(Cl)C=CC=C1Cl MTCPZNVSDFCBBE-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000002470 thermal conductor Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- LMFWXTZEFKLNSB-UHFFFAOYSA-N OS(O)(=O)=O.OS(O)(=O)=O.OS(O)(=O)=O.P.P Chemical compound OS(O)(=O)=O.OS(O)(=O)=O.OS(O)(=O)=O.P.P LMFWXTZEFKLNSB-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229920002100 high-refractive-index polymer Polymers 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- XLROVYAPLOFLNU-UHFFFAOYSA-N protactinium atom Chemical compound [Pa] XLROVYAPLOFLNU-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- CENHPXAQKISCGD-UHFFFAOYSA-N trioxathietane 4,4-dioxide Chemical compound O=S1(=O)OOO1 CENHPXAQKISCGD-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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Abstract
Description
本出願は、参考として、それらの内容が本明細書に組み込まれる、2010年5月17日に出願された、Hwa SUらによる「Light Emitting Device」と題される米国特許出願第12/781,194号、および2009年5月20日に出願された、Hwa SUらによる「Light Emitting Device」と題される米国特許仮出願第61/180,065号に基づく優先権を主張する。
Mmはベリリウム(Be)、Mg、Ca、Sr、Ba、Zn、Cdまたは水銀(Hg)から選択される二価の元素で、
MaはB、Al、Ga、インジウム(In)、Y、セレン(Se)、P、ヒ素(As)、La、Sm、アンチモン(Sb)またはBiから選択される三価の元素で、
MbはC、Si、Ge、錫(Sn)、Ni、ハフニウム(Hf)、モリブデン(Mo)、タングステン(W)、クロム(Cr)、鉛(Pb)、チタニウム(Ti)またはジルコニウム(Zr)から選択される四価の元素で、
DはF、Cl、BrまたはIから選択されるハロゲンで、
Zはユーロピウム(Eu)、Ce、マンガン(Mn)、Tbまたはサマリウム(Sm)から選択される活性剤で、かつ
Nは0.01≦m≦1.5、0.01≦a≦1.5、0.01≦b≦1.5、0.0001≦w≦0.6および0.0001≦z≦0.5の量の窒素である。前記蛍光体は、約640nmを超えるピーク発光波長を有する可視光を放出するように構成される。
Claims (21)
- a)第1波長範囲内に主波長を有する光を発生するように作動可能な複数のLEDチップ、および
b)前記LEDチップを格納するためのパッケージ
を含む発光装置であって、
前記パッケージが
c)その上に前記LEDチップが熱的にやり取りできるように取り付けられる熱伝導性の基板、および
d)その中で各々の穴が前記LEDチップのそれぞれの1つに対応する複数の貫通穴を有するカバーであって、前記カバーが前記基板に取り付けられる場合に、前記基板と連結する各々の穴がその中にそれぞれのLEDチップが格納されるリセスの輪郭を形成するように前記穴が構成されるカバー
を含む、発光装置。 - 前記パッケージが5℃/W未満および2℃/W未満からなる群から選択される熱抵抗を有する、請求項1に記載の装置。
- 少なくとも1つの蛍光体材料および光透過性材料の混合物で少なくとも部分的に充填される各々のリセスをさらに含み、前記少なくとも1つの蛍光体材料が前記光の少なくとも一部を吸収し、かつ第2波長範囲内に主波長を有する光を放出するように構成される、請求項1に記載の装置。
- 前記装置の放出生成物が前記第1および第2波長範囲の光の組み合わせを含む、請求項3に記載の装置。
- 前記放出生成物が白色光である、請求項4に記載の装置。
- 前記基板が少なくとも200Wm-1K-1の熱伝導率を有する、請求項1に記載の装置。
- 前記基板が銅、銅合金、アルミニウム、アルミニウム合金、マグネシウム合金、熱伝導性セラミック、炭化ケイ素アルミニウムおよび炭素系複合材料からなる群から選択される、請求項6に記載の装置。
- 前記カバーが熱伝導性であり、かつ少なくとも150Wm-1K-1および少なくとも200Wm-1K-1からなる群から選択される熱伝導率を有する、請求項1に記載の装置。
- 前記カバーが銅、銅合金、アルミニウム、アルミニウム合金、マグネシウム合金、熱伝導性セラミック、炭化ケイ素アルミニウムおよび炭素系複合材料からなる群から選択される、請求項8に記載の装置。
- 前記基板上に取り付けられる電気回路配置をさらに含み、前記回路配置が各々のLEDチップが前記基板に直接取り付けられるように構成される複数の貫通穴を有する、請求項1に記載の装置。
- 前記回路配置に各々のLEDチップを電気的に接続することをさらに含む、請求項10に記載の装置。
- 前記回路配置がプリント回路基板を含む、請求項10に記載の装置。
- 前記LEDチップが「横方向」伝導性チップである、請求項10に記載の装置。
- 前記基板上に、その表面に電気伝導体の配置を有する電気的に絶縁性で熱伝導性の層をさらに含み、かつ各々のLEDチップが電気伝導体に取り付けられる、請求項1に記載の装置。
- 前記熱伝導性層がダイヤモンド状炭素膜を含む、請求項14に記載の装置。
- 前記LEDチップが「縦方向」伝導性チップである、請求項14に記載の装置。
- 少なくとも1つのリセスを覆う光学的構成要素をさらに含む、請求項1に記載の装置。
- a)第1波長範囲内に主波長を有する光を発生するように作動可能な複数のLEDチップ、および
b)前記LEDチップを格納するためのパッケージ
を含む発光装置であって、
前記パッケージが
c)その上に前記LEDチップが直接熱的にやり取りできるように取り付けられる熱伝導性の基板、
d)前記基板上に取り付けられる電気回路配置であって、各々のLEDチップが直接熱的にやり取りできるように前記基板に取り付けられるように構成される複数の貫通穴を有する電気回路配置、
e)その中で各々の穴が前記LEDチップのそれぞれの1つに対応する複数の貫通穴を有するカバーであって、前記カバーが前記回路配置に取り付けられる場合に、前記回路配置と連結する各々の穴がその中にそれぞれのLEDチップが格納されるリセスの輪郭を形成するように前記穴が構成されるカバー
を含み、かつ
f)各々のリセスが少なくとも1つの蛍光体材料および光透過性材料の混合物で少なくとも部分的に充填されていて、前記少なくとも1つの蛍光体材料が前記第1波長範囲の光の少なくとも一部を吸収し、かつ第2波長範囲内の主波長を有する光を放出するするように構成される、
発光装置。 - a)第1波長範囲内に主波長を有する光を発生するように作動可能な複数のLEDチップ、および
b)前記チップを格納するためのパッケージ
を含む発光装置であって、
前記パッケージが
c)熱伝導性基板、
d)前記基板上に取り付けられる電気回路配置であって、前記回路配置がその表面に電気伝導体の配置を有する電気的に絶縁性で熱伝導性の層を含み、かつ各々のLEDチップが電気伝導体に取り付けられる電気回路配置、
e)その中で各々の穴が前記LEDチップのそれぞれの1つに対応する複数の貫通穴を有するカバーであって、前記カバーが前記回路配置に取り付けられる場合に、前記回路配置と連結する各々の穴がその中にそれぞれのLEDチップが格納されるリセスの輪郭を形成するように前記穴が構成されるカバー
を含み、かつ
f)各々のリセスが少なくとも1つの蛍光体材料および光透過性材料の混合物で少なくとも部分的に充填されていて、前記少なくとも1つの蛍光体材料が前記第1波長範囲の光の少なくとも一部を吸収し、かつ第2波長範囲内の主波長を有する光を放出するするように構成される、
発光装置。 - 第1波長範囲内に主波長を有する光を発生するように作動可能な複数のLEDチップを含む、発光装置のためのパッケージであって、
a)その上に前記LEDチップが取り付け可能な熱伝導性基板、および
b)その中で各々の穴が前記LEDチップのそれぞれの1つに対応する複数の貫通穴を有するカバーであって、前記カバーが前記基板に取り付けられる場合に、前記基板と連結する各々の穴がその中にそれぞれのLEDチップが格納されるリセスの輪郭を形成するように前記穴が構成されるカバー
を含む、発光装置のためのパッケージ。 - 前記パッケージが5℃/W未満および2℃/W未満からなる群から選択される熱抵抗を有する、請求項20に記載のパッケージ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18006509P | 2009-05-20 | 2009-05-20 | |
US61/180,065 | 2009-05-20 | ||
US12/781,194 US8440500B2 (en) | 2009-05-20 | 2010-05-17 | Light emitting device |
US12/781,194 | 2010-05-17 | ||
PCT/US2010/035307 WO2010135358A1 (en) | 2009-05-20 | 2010-05-18 | Light emitting device |
Publications (2)
Publication Number | Publication Date |
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JP2012527778A true JP2012527778A (ja) | 2012-11-08 |
JP5710603B2 JP5710603B2 (ja) | 2015-04-30 |
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JP2012511970A Active JP5710603B2 (ja) | 2009-05-20 | 2010-05-18 | 発光装置 |
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US (1) | US8440500B2 (ja) |
JP (1) | JP5710603B2 (ja) |
KR (1) | KR101644897B1 (ja) |
CN (1) | CN102460738B (ja) |
TW (1) | TWI504028B (ja) |
WO (1) | WO2010135358A1 (ja) |
Cited By (2)
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JPWO2015137314A1 (ja) * | 2014-03-11 | 2017-04-06 | ウシオ電機株式会社 | 発光モジュール |
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KR20120030432A (ko) | 2012-03-28 |
CN102460738A (zh) | 2012-05-16 |
TW201126777A (en) | 2011-08-01 |
WO2010135358A1 (en) | 2010-11-25 |
TWI504028B (zh) | 2015-10-11 |
US20100295070A1 (en) | 2010-11-25 |
KR101644897B1 (ko) | 2016-08-02 |
CN102460738B (zh) | 2015-06-24 |
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