JP2012523134A5 - - Google Patents

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Publication number
JP2012523134A5
JP2012523134A5 JP2012504754A JP2012504754A JP2012523134A5 JP 2012523134 A5 JP2012523134 A5 JP 2012523134A5 JP 2012504754 A JP2012504754 A JP 2012504754A JP 2012504754 A JP2012504754 A JP 2012504754A JP 2012523134 A5 JP2012523134 A5 JP 2012523134A5
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JP
Japan
Prior art keywords
electromagnetic field
operating
generation unit
potential
driving
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JP2012504754A
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English (en)
Japanese (ja)
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JP2012523134A (ja
JP5636038B2 (ja
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Priority claimed from US12/621,590 external-priority patent/US8154209B2/en
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Publication of JP2012523134A5 publication Critical patent/JP2012523134A5/ja
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JP2012504754A 2009-04-06 2010-04-06 プラズマを用いた処理システムを動作させる方法 Active JP5636038B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16698709P 2009-04-06 2009-04-06
US61/166,987 2009-04-06
US12/621,590 US8154209B2 (en) 2009-04-06 2009-11-19 Modulated multi-frequency processing method
US12/621,590 2009-11-19
PCT/US2010/030019 WO2010117969A2 (en) 2009-04-06 2010-04-06 Modulated multi-frequency processing method

Publications (3)

Publication Number Publication Date
JP2012523134A JP2012523134A (ja) 2012-09-27
JP2012523134A5 true JP2012523134A5 (enExample) 2013-05-23
JP5636038B2 JP5636038B2 (ja) 2014-12-03

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Family Applications (1)

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JP2012504754A Active JP5636038B2 (ja) 2009-04-06 2010-04-06 プラズマを用いた処理システムを動作させる方法

Country Status (8)

Country Link
US (1) US8154209B2 (enExample)
EP (1) EP2417625A4 (enExample)
JP (1) JP5636038B2 (enExample)
KR (1) KR101690812B1 (enExample)
CN (1) CN102388439B (enExample)
SG (1) SG174501A1 (enExample)
TW (1) TWI517238B (enExample)
WO (1) WO2010117969A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9117767B2 (en) * 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
JP2014072272A (ja) * 2012-09-28 2014-04-21 Toppan Printing Co Ltd プラズマエッチング方法およびプラズマエッチング装置
FR3020718B1 (fr) * 2014-05-02 2016-06-03 Ecole Polytech Procede et systeme pour controler des flux d'ions dans un plasma rf.
JP6697372B2 (ja) * 2016-11-21 2020-05-20 キオクシア株式会社 ドライエッチング方法及び半導体装置の製造方法
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
KR102820269B1 (ko) * 2018-04-13 2025-06-12 도쿄엘렉트론가부시키가이샤 공정 플라즈마의 이온 에너지 분포를 제어하기 위한 장치 및 방법
US11217443B2 (en) * 2018-11-30 2022-01-04 Applied Materials, Inc. Sequential deposition and high frequency plasma treatment of deposited film on patterned and un-patterned substrates
US11158488B2 (en) 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3220383B2 (ja) * 1996-07-23 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置及びその方法
JPH10150025A (ja) * 1996-11-20 1998-06-02 Mitsubishi Electric Corp プラズマ反応装置
KR100521120B1 (ko) * 1998-02-13 2005-10-12 가부시끼가이샤 히다치 세이사꾸쇼 반도체소자의 표면처리방법 및 장치
JP2000269198A (ja) * 1999-03-19 2000-09-29 Toshiba Corp プラズマ処理方法及びプラズマ処理装置
JP2001035839A (ja) * 1999-05-18 2001-02-09 Hitachi Kokusai Electric Inc プラズマ生成装置および半導体製造方法
JP3640609B2 (ja) * 2000-10-16 2005-04-20 アルプス電気株式会社 プラズマ処理装置，プラズマ処理システムおよびこれらの性能確認システム，検査方法
WO2002097855A1 (en) * 2001-05-29 2002-12-05 Tokyo Electron Limited Plasma processing apparatus and method
DE10326135B4 (de) * 2002-06-12 2014-12-24 Ulvac, Inc. Entladungsplasma-Bearbeitungsanlage
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US20030015965A1 (en) * 2002-08-15 2003-01-23 Valery Godyak Inductively coupled plasma reactor
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7183716B2 (en) * 2003-02-04 2007-02-27 Veeco Instruments, Inc. Charged particle source and operation thereof
US7976673B2 (en) * 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
US6972524B1 (en) * 2004-03-24 2005-12-06 Lam Research Corporation Plasma processing system control
US7645357B2 (en) * 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US7837826B2 (en) * 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
JP5063154B2 (ja) * 2007-03-20 2012-10-31 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法

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