KR101690812B1 - 변조된 멀티-주파수 처리 방법 - Google Patents

변조된 멀티-주파수 처리 방법 Download PDF

Info

Publication number
KR101690812B1
KR101690812B1 KR1020117023462A KR20117023462A KR101690812B1 KR 101690812 B1 KR101690812 B1 KR 101690812B1 KR 1020117023462 A KR1020117023462 A KR 1020117023462A KR 20117023462 A KR20117023462 A KR 20117023462A KR 101690812 B1 KR101690812 B1 KR 101690812B1
Authority
KR
South Korea
Prior art keywords
amplitude
section
potential
electromagnetic field
plasma sheath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020117023462A
Other languages
English (en)
Korean (ko)
Other versions
KR20120009441A (ko
Inventor
알렉세이 마라크타노브
에릭 허드슨
라진더 딘드사
앤드류 베일리
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20120009441A publication Critical patent/KR20120009441A/ko
Application granted granted Critical
Publication of KR101690812B1 publication Critical patent/KR101690812B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020117023462A 2009-04-06 2010-04-06 변조된 멀티-주파수 처리 방법 Active KR101690812B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16698709P 2009-04-06 2009-04-06
US61/166,987 2009-04-06
US12/621,590 US8154209B2 (en) 2009-04-06 2009-11-19 Modulated multi-frequency processing method
US12/621,590 2009-11-19
PCT/US2010/030019 WO2010117969A2 (en) 2009-04-06 2010-04-06 Modulated multi-frequency processing method

Publications (2)

Publication Number Publication Date
KR20120009441A KR20120009441A (ko) 2012-01-31
KR101690812B1 true KR101690812B1 (ko) 2016-12-28

Family

ID=42825618

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117023462A Active KR101690812B1 (ko) 2009-04-06 2010-04-06 변조된 멀티-주파수 처리 방법

Country Status (8)

Country Link
US (1) US8154209B2 (enExample)
EP (1) EP2417625A4 (enExample)
JP (1) JP5636038B2 (enExample)
KR (1) KR101690812B1 (enExample)
CN (1) CN102388439B (enExample)
SG (1) SG174501A1 (enExample)
TW (1) TWI517238B (enExample)
WO (1) WO2010117969A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9117767B2 (en) * 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
JP2014072272A (ja) * 2012-09-28 2014-04-21 Toppan Printing Co Ltd プラズマエッチング方法およびプラズマエッチング装置
FR3020718B1 (fr) * 2014-05-02 2016-06-03 Ecole Polytech Procede et systeme pour controler des flux d'ions dans un plasma rf.
JP6697372B2 (ja) * 2016-11-21 2020-05-20 キオクシア株式会社 ドライエッチング方法及び半導体装置の製造方法
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
KR102820269B1 (ko) * 2018-04-13 2025-06-12 도쿄엘렉트론가부시키가이샤 공정 플라즈마의 이온 에너지 분포를 제어하기 위한 장치 및 방법
US11217443B2 (en) * 2018-11-30 2022-01-04 Applied Materials, Inc. Sequential deposition and high frequency plasma treatment of deposited film on patterned and un-patterned substrates
US11158488B2 (en) 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235579A (ja) * 2007-03-20 2008-10-02 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3220383B2 (ja) * 1996-07-23 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置及びその方法
JPH10150025A (ja) * 1996-11-20 1998-06-02 Mitsubishi Electric Corp プラズマ反応装置
KR100521120B1 (ko) * 1998-02-13 2005-10-12 가부시끼가이샤 히다치 세이사꾸쇼 반도체소자의 표면처리방법 및 장치
JP2000269198A (ja) * 1999-03-19 2000-09-29 Toshiba Corp プラズマ処理方法及びプラズマ処理装置
JP2001035839A (ja) * 1999-05-18 2001-02-09 Hitachi Kokusai Electric Inc プラズマ生成装置および半導体製造方法
JP3640609B2 (ja) * 2000-10-16 2005-04-20 アルプス電気株式会社 プラズマ処理装置，プラズマ処理システムおよびこれらの性能確認システム，検査方法
WO2002097855A1 (en) * 2001-05-29 2002-12-05 Tokyo Electron Limited Plasma processing apparatus and method
DE10326135B4 (de) * 2002-06-12 2014-12-24 Ulvac, Inc. Entladungsplasma-Bearbeitungsanlage
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US20030015965A1 (en) * 2002-08-15 2003-01-23 Valery Godyak Inductively coupled plasma reactor
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7183716B2 (en) * 2003-02-04 2007-02-27 Veeco Instruments, Inc. Charged particle source and operation thereof
US7976673B2 (en) * 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
US6972524B1 (en) * 2004-03-24 2005-12-06 Lam Research Corporation Plasma processing system control
US7645357B2 (en) * 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US7837826B2 (en) * 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235579A (ja) * 2007-03-20 2008-10-02 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
CN102388439A (zh) 2012-03-21
KR20120009441A (ko) 2012-01-31
TW201126594A (en) 2011-08-01
JP2012523134A (ja) 2012-09-27
CN102388439B (zh) 2014-03-12
US8154209B2 (en) 2012-04-10
US20100253224A1 (en) 2010-10-07
EP2417625A2 (en) 2012-02-15
SG174501A1 (en) 2011-10-28
WO2010117969A2 (en) 2010-10-14
EP2417625A4 (en) 2015-12-02
WO2010117969A3 (en) 2011-01-13
TWI517238B (zh) 2016-01-11
JP5636038B2 (ja) 2014-12-03

Similar Documents

Publication Publication Date Title
KR101690812B1 (ko) 변조된 멀티-주파수 처리 방법
US6849857B2 (en) Beam processing apparatus
US6949735B1 (en) Beam source
KR102871305B1 (ko) 플라즈마 프로세싱 챔버에서 피처 대전을 감소시키기 위한 방법 및 장치
US9799494B2 (en) Energetic negative ion impact ionization plasma
KR102419368B1 (ko) 높은 종횡비의 식각을 위한 플라즈마 반응기 및 그의 식각 방법
KR20120022251A (ko) 플라즈마 식각방법 및 그의 장치
WO2002078041A2 (en) Neutral particle beam processing apparatus
KR102867184B1 (ko) 플라즈마 반응기 내의 전극들에 대한 이온 에너지 제어
US6909086B2 (en) Neutral particle beam processing apparatus
US7087912B2 (en) Ion beam irradiation apparatus for suppressing charge up of substrate and method for the same
KR102871878B1 (ko) 펄스화된 전자 빔을 사용하는 플라즈마 처리 방법
US6858838B2 (en) Neutral particle beam processing apparatus
WO2023211665A1 (en) Method to enhance etch rate and improve critical dimension of features and mask selectivity
CN119170473A (zh) 半导体工艺设备及其脉冲调节等离子体方法
TWI903122B (zh) 電漿反應器中電極的離子能量控制
TWI900778B (zh) 用於在電漿處理腔室中減少特徵充電的方法及設備
KR101016810B1 (ko) 플라즈마 표면처리 장치
JP3605491B2 (ja) 反応性イオンエッチング装置
KR20220065978A (ko) 고주파 펄스 소스 및 저주파 펄스 바이어스를 이용한 플라즈마 극고종횡비 식각 방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20111005

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20150330

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20160516

Patent event code: PE09021S01D

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20160831

Patent event code: PE09021S02D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20160928

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20161222

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20161222

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20191213

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20191213

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20201210

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20221207

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20231207

Start annual number: 8

End annual number: 8