JP2012518087A - インジウムアルコキシド含有組成物、該組成物の製造法及び該組成物の使用 - Google Patents
インジウムアルコキシド含有組成物、該組成物の製造法及び該組成物の使用 Download PDFInfo
- Publication number
- JP2012518087A JP2012518087A JP2011550510A JP2011550510A JP2012518087A JP 2012518087 A JP2012518087 A JP 2012518087A JP 2011550510 A JP2011550510 A JP 2011550510A JP 2011550510 A JP2011550510 A JP 2011550510A JP 2012518087 A JP2012518087 A JP 2012518087A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- indium
- alkoxide
- composition according
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 77
- -1 Indium alkoxide Chemical class 0.000 title claims abstract description 36
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title abstract description 24
- 239000002904 solvent Substances 0.000 claims abstract description 32
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims abstract description 22
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 108700031620 S-acetylthiorphan Proteins 0.000 claims abstract description 12
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 claims abstract description 12
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229940116333 ethyl lactate Drugs 0.000 claims abstract description 11
- 238000009835 boiling Methods 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 8
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims abstract description 7
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims abstract description 7
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 150000004703 alkoxides Chemical class 0.000 claims description 27
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 14
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 claims description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 4
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 150000001299 aldehydes Chemical class 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 150000005846 sugar alcohols Polymers 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- CXIAOEXVDRAYBR-UHFFFAOYSA-N indium(3+);propan-1-olate Chemical group [In+3].CCC[O-].CCC[O-].CCC[O-] CXIAOEXVDRAYBR-UHFFFAOYSA-N 0.000 claims 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 61
- 229910003437 indium oxide Inorganic materials 0.000 description 31
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 31
- 238000000576 coating method Methods 0.000 description 19
- 239000000758 substrate Substances 0.000 description 17
- 239000002800 charge carrier Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 12
- 239000002243 precursor Substances 0.000 description 11
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 238000007639 printing Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- YOXIUZUZFIAFTN-UHFFFAOYSA-N indium;propan-2-ol Chemical compound [In].CC(C)O.CC(C)O.CC(C)O YOXIUZUZFIAFTN-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000003980 solgel method Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052752 metalloid Inorganic materials 0.000 description 4
- 229910021617 Indium monochloride Inorganic materials 0.000 description 3
- 150000002471 indium Chemical class 0.000 description 3
- 229910001449 indium ion Inorganic materials 0.000 description 3
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- OVZUSPADPSOQQN-UHFFFAOYSA-N tri(propan-2-yloxy)indigane Chemical compound [In+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] OVZUSPADPSOQQN-UHFFFAOYSA-N 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 125000000027 (C1-C10) alkoxy group Chemical group 0.000 description 2
- 125000006732 (C1-C15) alkyl group Chemical group 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- HQPSKTOGFFYYKN-UHFFFAOYSA-N CC(C)[Na] Chemical compound CC(C)[Na] HQPSKTOGFFYYKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
- Paints Or Removers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
金属アルコキシドフィルムは、熱的に処理され、かつ酸化物膜へと変換される。
極めて有利には、本発明による方法は印刷法である。
溶液0の調製
イソプロパノール(bp:82℃)中で5質量%のインジウム(III)イソプロポキシドの溶液に、イソプロパノール10体積%を加えた。この方法では、本発明による実施例で濃度を変化させることによって生じる効果は除外される。
約15mmのエッジ長さ及び約200nmの厚さの酸化シリコン−コーティング及びITO/金からのフィンガー構造を有するドープされたシリコン基材を、上記と同じ条件下で、調製された溶液0 100μLを用いてスピンコーティング(2000rpm)により空気中でSATP条件下でコーティングした。コーティングプロセス後に、コーティングされた基材を空気中で350℃の温度で1時間のあいだ焼鈍した。
上述の例と同じように、更に別の組成物を製造した。これらの溶液を用いて、比較例と同じようにトランジスタを組み立て、そして該トランジスタの電荷担体移動度を測った。第1表には、製造した溶液と測定した移動度がまとめられている。
イソプロパノール(bp:82℃)中で5質量%のインジウム(III)イソプロポキシドの溶液に、酢酸ブチル(bp:127℃)50体積%と乳酸エチル(bp:154℃)からなる混合物10体積%を加えた。
イソプロパノール(bp:82℃)中で5質量%のインジウム(III)イソプロポキシドの溶液に、ジエチレングリコール(bp:244℃)50体積%とアニソール(bp:155℃)50体積%からなる混合物10体積%を加えた。
イソプロパノール(bp:82℃)中で5質量%のインジウム(III)イソプロポキシドの溶液に、ジエチレングリコール(bp:244℃)50体積%とエチレングリコールジアセテート(bp:190℃)50体積%からなる混合物10体積%を加えた。
イソプロパノール(bp:82℃)中で5質量%のインジウム(III)イソプロポキシドの溶液に、ジエチレングリコール(bp:244℃)50体積%と安息香酸エチル(bp:214℃)50体積%からなる混合物10体積%を加えた。
約15mmのエッジ長さ及び約200nmの厚さの酸化シリコン−コーティング及びITO/金からのフィンガー構造を有するドープされたシリコン基材を、上記と同じ条件下で、それぞれの溶液100μLを用いてスピンコーティング(2000rpm)により空気中でSATP条件下でコーティングした。コーティングプロセス後に、コーティングされた基材を空気中で350℃の温度で1時間のあいだ焼鈍した。電気的測定の結果は、第1表から読み取ることができる。
Claims (18)
- 液状のインジウムアルコキシド含有組成物であって、
− 少なくとも1種のインジウムアルコキシドと
− 少なくとも3種の溶媒L1、L2及びL3
を包含する液状のインジウムアルコキシド含有組成物において、溶媒L1が、乳酸エチル、アニソール、テトラヒドロフルフリルアルコール、酢酸ブチル、エチレングリコールジアセテート及び安息香酸エチルから成る群から選択されており、かつ双方の溶媒L2及びL3の沸点の差がSATP条件下で少なくとも30℃であることを特徴とする、液状のインジウムアルコキシド含有組成物。 - 前記溶媒L1が、乳酸エチル、アニソール、テトラヒドロフルフリルアルコール及び酢酸ブチルから成る群から選択されていることを特徴とする、請求項1記載の組成物。
- 前記少なくとも1種のインジウムアルコキシドが、少なくとも1個のC1〜C15−アルコキシ基又は−オキシアルキルアルコキシ基を有するインジウム(III)アルコキシドであることを特徴とする、請求項1又は2記載の組成物。
- 前記インジウム(III)アルコキシドが、インジウムプロポキシドであることを特徴とする、請求項3記載の組成物。
- 前記インジウムアルコキシドが、前記組成物中で、前記組成物の全体の質量に対して、1〜15質量%の割合で、特に有利には2〜10質量%の割合で、極めて有利には2.5〜7.5質量%の割合で存在することを特徴とする、請求項1から4までのいずれか1項記載の組成物。
- 前記溶媒L2及びL3が有機溶媒であり、それらは互いに無関係に、アルコール、ポリアルコール、エステル、アミン、ケトン又はアルデヒドから成る群から選択されていることを特徴とする、請求項1から5までのいずれか1項記載の組成物。
- L2の沸点がSATP条件下で30〜120℃であり、かつL3の沸点がSATP条件下で120〜300℃であることを特徴とする、請求項1から6までのいずれか1項記載の組成物。
- L2が、イソプロパノール、メタノール、エタノール、アセトン、トルエン、テトラヒドロフラン、酢酸エチル、メチルエチルケトン、クロロホルム及びエチレングリコールジメチルエーテルから成る群から選択されていることを特徴とする、請求項1から7までのいずれか1項記載の組成物。
- L3が、テトラヒドロフルフリルアルコール、酢酸ブチル、ジエチレングリコール、アニソール、エチレングリコールジアセテート、安息香酸エチル及び乳酸エチルから成る群から選択されていることを特徴とする、請求項1から8までのいずれか1項記載の組成物。
- 前記組成物が2種の溶媒のイソプロパノール及びジエチレングリコールを包含することを特徴とする、請求項1から9までのいずれか1項記載の組成物。
- L2の割合が、前記組成物の全体の質量に対して30〜95質量%であり、かつL3の割合が、前記組成物の全体の質量に対して0.5〜70質量%であることを特徴とする、請求項1から10までのいずれか1項記載の組成物。
- 前記組成物が少なくとも3種の溶媒のイソプロパノール、酢酸ブチル及び乳酸エチルを有することを特徴とする、請求項1から11までのいずれか1項記載の組成物。
- なお少なくとも1種の更なる金属アルコキシドを有することを特徴とする、請求項1から12までのいずれか1項記載の組成物。
- 前記少なくとも1種の金属アルコキシドの割合が、前記組成物の全体の質量に対して0.01〜7.5質量%であることを特徴とする、請求項13記載の組成物。
- 前記少なくとも1種のインジウムアルコキシドを、前記少なくとも3種の溶媒の混合物と混合することを特徴とする、請求項1から14までのいずれか1項記載の液状のインジウムアルコキシド含有組成物の製造法。
- 前記少なくとも1種のインジウムアルコキシドと少なくとも1種の溶媒を包含する組成物を他の溶媒と混合することを特徴とする、請求項1から14までのいずれか1項記載の液状のインジウムアルコキシド含有組成物の製造法。
- 半導体構造を製造するための、請求項1から14までのいずれか1項記載の組成物の使用。
- 電子素子を製造するための、殊に(薄膜)トランジスタ、ダイオード又は太陽電池を製造するための、請求項1から14までのいずれか1項記載の組成物の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009009338.9 | 2009-02-17 | ||
DE102009009338A DE102009009338A1 (de) | 2009-02-17 | 2009-02-17 | Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
PCT/EP2010/051409 WO2010094581A1 (de) | 2009-02-17 | 2010-02-05 | Indiumalkoxid-haltige zusammensetzungen, verfahren zu ihrer herstellung und ihre verwendung |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012518087A true JP2012518087A (ja) | 2012-08-09 |
JP2012518087A5 JP2012518087A5 (ja) | 2013-03-28 |
JP5698154B2 JP5698154B2 (ja) | 2015-04-08 |
Family
ID=42312917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011550510A Expired - Fee Related JP5698154B2 (ja) | 2009-02-17 | 2010-02-05 | インジウムアルコキシド含有組成物、該組成物の製造法及び該組成物の使用 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9115422B2 (ja) |
EP (1) | EP2398935B1 (ja) |
JP (1) | JP5698154B2 (ja) |
KR (1) | KR101662862B1 (ja) |
CN (1) | CN102317503B (ja) |
DE (1) | DE102009009338A1 (ja) |
TW (1) | TWI483925B (ja) |
WO (1) | WO2010094581A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11908945B2 (en) | 2015-09-15 | 2024-02-20 | Ricoh Company, Ltd. | Coating liquid for forming n-type oxide semiconductor film, method for producing n-type oxide semiconductor film, and method for producing field-effect transistor |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007018431A1 (de) * | 2007-04-19 | 2008-10-30 | Evonik Degussa Gmbh | Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor |
DE102008058040A1 (de) * | 2008-11-18 | 2010-05-27 | Evonik Degussa Gmbh | Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten |
DE102009028801B3 (de) | 2009-08-21 | 2011-04-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung |
DE102009028802B3 (de) | 2009-08-21 | 2011-03-24 | Evonik Degussa Gmbh | Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung |
DE102009054997B3 (de) | 2009-12-18 | 2011-06-01 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
DE102009054998A1 (de) | 2009-12-18 | 2011-06-22 | Evonik Degussa GmbH, 45128 | Verfahren zur Herstellung von Indiumchlordialkoxiden |
DE102010031592A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
DE102010031895A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
DE102010043668B4 (de) | 2010-11-10 | 2012-06-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
KR101255099B1 (ko) * | 2011-03-09 | 2013-04-16 | 한국화학연구원 | 플루오르를 포함하는 리간드를 갖는 새로운 주석 화합물 및 그 제조 방법 |
DE102011084145A1 (de) | 2011-10-07 | 2013-04-11 | Evonik Degussa Gmbh | Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung |
DE102012209918A1 (de) | 2012-06-13 | 2013-12-19 | Evonik Industries Ag | Verfahren zur Herstellung Indiumoxid-haltiger Schichten |
DE102013212018A1 (de) | 2013-06-25 | 2015-01-08 | Evonik Industries Ag | Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung |
DE102013212017A1 (de) * | 2013-06-25 | 2015-01-08 | Evonik Industries Ag | Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung |
DE102013212019A1 (de) | 2013-06-25 | 2015-01-08 | Evonik Industries Ag | Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung |
DE102014202718A1 (de) * | 2014-02-14 | 2015-08-20 | Evonik Degussa Gmbh | Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung |
EP3409813A1 (en) | 2017-06-01 | 2018-12-05 | Evonik Degussa GmbH | Device containing metal oxide-containing layers |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11106934A (ja) * | 1997-09-30 | 1999-04-20 | Fuji Photo Film Co Ltd | 金属酸化物薄膜の製造方法及び金属酸化物薄膜 |
JP2007042689A (ja) * | 2005-07-29 | 2007-02-15 | Fujifilm Holdings Corp | 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2659649B1 (fr) * | 1990-03-16 | 1992-06-12 | Kodak Pathe | Preparation d'alkoxydes d'indium solubles dans les solvants organiques. |
JPH06136162A (ja) | 1992-10-21 | 1994-05-17 | Fujimori Kogyo Kk | 金属酸化物薄膜の形成方法 |
JPH09157855A (ja) | 1995-12-06 | 1997-06-17 | Kansai Shin Gijutsu Kenkyusho:Kk | 金属酸化物薄膜の形成方法 |
JPH11106935A (ja) | 1997-09-30 | 1999-04-20 | Fuji Photo Film Co Ltd | 金属酸化物薄膜の製造方法及び金属酸化物薄膜 |
US6376691B1 (en) * | 1999-09-01 | 2002-04-23 | Symetrix Corporation | Metal organic precursors for transparent metal oxide thin films and method of making same |
CN1101352C (zh) | 2000-07-15 | 2003-02-12 | 昆明理工大学 | 铟锡氧化物薄膜溶胶—凝胶制备方法 |
DE102007018431A1 (de) | 2007-04-19 | 2008-10-30 | Evonik Degussa Gmbh | Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor |
JP2009177149A (ja) | 2007-12-26 | 2009-08-06 | Konica Minolta Holdings Inc | 金属酸化物半導体とその製造方法および薄膜トランジスタ |
DE102008058040A1 (de) | 2008-11-18 | 2010-05-27 | Evonik Degussa Gmbh | Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten |
DE102009009337A1 (de) | 2009-02-17 | 2010-08-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung |
DE102009050703B3 (de) | 2009-10-26 | 2011-04-21 | Evonik Goldschmidt Gmbh | Verfahren zur Selbstassemblierung elektrischer, elektronischer oder mikromechanischer Bauelemente auf einem Substrat und damit hergestelltes Erzeugnis |
DE102010043668B4 (de) | 2010-11-10 | 2012-06-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
-
2009
- 2009-02-17 DE DE102009009338A patent/DE102009009338A1/de not_active Withdrawn
-
2010
- 2010-02-05 US US13/148,967 patent/US9115422B2/en not_active Expired - Fee Related
- 2010-02-05 KR KR1020117019053A patent/KR101662862B1/ko active IP Right Grant
- 2010-02-05 EP EP10703450.6A patent/EP2398935B1/de active Active
- 2010-02-05 CN CN201080007949.4A patent/CN102317503B/zh not_active Expired - Fee Related
- 2010-02-05 JP JP2011550510A patent/JP5698154B2/ja not_active Expired - Fee Related
- 2010-02-05 WO PCT/EP2010/051409 patent/WO2010094581A1/de active Application Filing
- 2010-02-11 TW TW099104482A patent/TWI483925B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11106934A (ja) * | 1997-09-30 | 1999-04-20 | Fuji Photo Film Co Ltd | 金属酸化物薄膜の製造方法及び金属酸化物薄膜 |
JP2007042689A (ja) * | 2005-07-29 | 2007-02-15 | Fujifilm Holdings Corp | 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11908945B2 (en) | 2015-09-15 | 2024-02-20 | Ricoh Company, Ltd. | Coating liquid for forming n-type oxide semiconductor film, method for producing n-type oxide semiconductor film, and method for producing field-effect transistor |
Also Published As
Publication number | Publication date |
---|---|
DE102009009338A1 (de) | 2010-08-26 |
CN102317503B (zh) | 2014-12-17 |
JP5698154B2 (ja) | 2015-04-08 |
US9115422B2 (en) | 2015-08-25 |
KR101662862B1 (ko) | 2016-10-05 |
US20110309313A1 (en) | 2011-12-22 |
CN102317503A (zh) | 2012-01-11 |
KR20110131179A (ko) | 2011-12-06 |
WO2010094581A1 (de) | 2010-08-26 |
EP2398935B1 (de) | 2019-08-28 |
EP2398935A1 (de) | 2011-12-28 |
TWI483925B (zh) | 2015-05-11 |
TW201041835A (en) | 2010-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5698154B2 (ja) | インジウムアルコキシド含有組成物、該組成物の製造法及び該組成物の使用 | |
JP6141362B2 (ja) | 半導体の酸化インジウム膜の製造法、該方法に従って製造された酸化インジウム膜及び該膜の使用 | |
KR102060492B1 (ko) | 고성능 및 전기 안정성의 반전도성 금속 산화물 층의 제조 방법, 및 상기 방법에 따라 제조된 층 및 그의 용도 | |
JP6161764B2 (ja) | 酸化インジウム含有層の製造方法 | |
JP5877832B2 (ja) | 酸化インジウム含有層を製造するためのインジウムオキソアルコキシド、その製造方法及びその使用 | |
KR101662980B1 (ko) | 산화 인듐을 함유하는 층의 제조 방법 | |
JP5933540B2 (ja) | 酸化インジウム含有層を製造するためのインジウムオキソアルコキシド | |
TW201137170A (en) | Process for producing indium oxide-containing layers, indium oxide-containing layers produced by the process and use thereof | |
Tan et al. | The annealing effects on the properties of solution-processed alumina thin film and its application in TFTs | |
Frunză et al. | Ta2O5-based high-K dielectric thin films from solution processed at low temperatures | |
US20130084672A1 (en) | Process to form aqueous precursor and aluminum oxide film | |
Hu et al. | A new sol-gel route to prepare dense Al2O3 thin films | |
EP2784137B1 (en) | PZT-based ferroelectric thin film-forming composition, method of preparing the same, and method of forming PZT-based ferroelectric thin film using the same | |
Kim et al. | The effect of solvent water content on the dielectric properties of Al2O3 films grown by atmospheric pressure mist-CVD | |
Peng et al. | High-k titanium–aluminum oxide dielectric films prepared by inorganic–organic hybrid solution | |
Hussain et al. | Aerosol-assisted chemical vapour deposition of titanium dioxide thin films on silicon and implementation of a heterojunction diode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130204 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130204 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140317 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140617 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140624 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141014 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141117 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150202 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150212 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5698154 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |