JP2012516056A - ガス配送システム用粒子削減処理 - Google Patents

ガス配送システム用粒子削減処理 Download PDF

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Publication number
JP2012516056A
JP2012516056A JP2011548081A JP2011548081A JP2012516056A JP 2012516056 A JP2012516056 A JP 2012516056A JP 2011548081 A JP2011548081 A JP 2011548081A JP 2011548081 A JP2011548081 A JP 2011548081A JP 2012516056 A JP2012516056 A JP 2012516056A
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JP
Japan
Prior art keywords
gas distribution
openings
distribution device
gas
distribution plate
Prior art date
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Pending
Application number
JP2011548081A
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English (en)
Japanese (ja)
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JP2012516056A5 (enExample
Inventor
デビッド ダトング ヒュオ
アイリーン アイ リン チョウ
デビッド クーンス
ジェニファー ワイ サン
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Applied Materials Inc
Original Assignee
Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2012516056A publication Critical patent/JP2012516056A/ja
Publication of JP2012516056A5 publication Critical patent/JP2012516056A5/ja
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • H05H1/34Details, e.g. electrodes, nozzles
    • H01L21/205
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/4998Combined manufacture including applying or shaping of fluent material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treating Waste Gases (AREA)
JP2011548081A 2009-01-21 2010-01-21 ガス配送システム用粒子削減処理 Pending JP2012516056A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/356,687 US20100180426A1 (en) 2009-01-21 2009-01-21 Particle reduction treatment for gas delivery system
US12/356,687 2009-01-21
PCT/US2010/021557 WO2010090846A2 (en) 2009-01-21 2010-01-21 Particle reduction treatment for gas delivery system

Publications (2)

Publication Number Publication Date
JP2012516056A true JP2012516056A (ja) 2012-07-12
JP2012516056A5 JP2012516056A5 (enExample) 2013-03-07

Family

ID=42335784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011548081A Pending JP2012516056A (ja) 2009-01-21 2010-01-21 ガス配送システム用粒子削減処理

Country Status (6)

Country Link
US (1) US20100180426A1 (enExample)
JP (1) JP2012516056A (enExample)
KR (1) KR20110115137A (enExample)
CN (1) CN102293062A (enExample)
TW (1) TW201034049A (enExample)
WO (1) WO2010090846A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230098667A (ko) * 2020-11-13 2023-07-04 어플라이드 머티어리얼스, 인코포레이티드 세라믹 전극 플레이트를 갖는 플라즈마 소스

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10559451B2 (en) * 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes
US11380557B2 (en) 2017-06-05 2022-07-05 Applied Materials, Inc. Apparatus and method for gas delivery in semiconductor process chambers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11104950A (ja) * 1997-10-03 1999-04-20 Shin Etsu Chem Co Ltd 電極板及びその製造方法
JP2001274103A (ja) * 2000-01-20 2001-10-05 Sumitomo Electric Ind Ltd 半導体製造装置用ガスシャワー体
JP2006224292A (ja) * 2005-01-19 2006-08-31 Grandex Co Ltd デバリング方法及びデバリング装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506885A (en) * 1965-07-12 1970-04-14 Brunswick Corp Electric device having passage structure electrode
US4680897A (en) * 1985-12-03 1987-07-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for machining holes in composite materials
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US6399499B1 (en) * 1999-09-14 2002-06-04 Jeong Gey Lee Method for fabricating an electrode of a plasma chamber
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US7479304B2 (en) * 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
JP2004149881A (ja) * 2002-10-31 2004-05-27 Applied Materials Inc プラズマ処理装置及び方法
TWI284075B (en) * 2005-08-31 2007-07-21 Univ Nat Central Grinding material spiral grinding device and method thereof
ES2534215T3 (es) * 2006-08-30 2015-04-20 Oerlikon Metco Ag, Wohlen Dispositivo de pulverización de plasma y un método para la introducción de un precursor líquido en un sistema de gas de plasma
EP1895818B1 (en) * 2006-08-30 2015-03-11 Sulzer Metco AG Plasma spraying device and a method for introducing a liquid precursor into a plasma gas system
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing
CN100577866C (zh) * 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11104950A (ja) * 1997-10-03 1999-04-20 Shin Etsu Chem Co Ltd 電極板及びその製造方法
JP2001274103A (ja) * 2000-01-20 2001-10-05 Sumitomo Electric Ind Ltd 半導体製造装置用ガスシャワー体
JP2006224292A (ja) * 2005-01-19 2006-08-31 Grandex Co Ltd デバリング方法及びデバリング装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230098667A (ko) * 2020-11-13 2023-07-04 어플라이드 머티어리얼스, 인코포레이티드 세라믹 전극 플레이트를 갖는 플라즈마 소스
JP2023549786A (ja) * 2020-11-13 2023-11-29 アプライド マテリアルズ インコーポレイテッド セラミック電極プレート付きプラズマ源
JP7679470B2 (ja) 2020-11-13 2025-05-19 アプライド マテリアルズ インコーポレイテッド セラミック電極プレート付きプラズマ源
KR102864030B1 (ko) 2020-11-13 2025-09-23 어플라이드 머티어리얼스, 인코포레이티드 세라믹 전극 플레이트를 갖는 플라즈마 소스

Also Published As

Publication number Publication date
CN102293062A (zh) 2011-12-21
WO2010090846A2 (en) 2010-08-12
KR20110115137A (ko) 2011-10-20
WO2010090846A3 (en) 2010-10-28
US20100180426A1 (en) 2010-07-22
TW201034049A (en) 2010-09-16

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