TW201034049A - Particle reduction treatment for gas delivery system - Google Patents
Particle reduction treatment for gas delivery system Download PDFInfo
- Publication number
- TW201034049A TW201034049A TW099101681A TW99101681A TW201034049A TW 201034049 A TW201034049 A TW 201034049A TW 099101681 A TW099101681 A TW 099101681A TW 99101681 A TW99101681 A TW 99101681A TW 201034049 A TW201034049 A TW 201034049A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas distribution
- gas
- distribution plate
- slurry
- distribution device
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 13
- 238000009826 distribution Methods 0.000 claims abstract description 90
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000002002 slurry Substances 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 239000004014 plasticizer Substances 0.000 claims description 2
- 241000219112 Cucumis Species 0.000 claims 2
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 claims 2
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 claims 2
- 230000001143 conditioned effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 102
- 239000000758 substrate Substances 0.000 description 17
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000013618 particulate matter Substances 0.000 description 9
- 230000015654 memory Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 230000009977 dual effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011859 microparticle Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 241001125929 Trisopterus luscus Species 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- -1 e.g. Inorganic materials 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Treating Waste Gases (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/356,687 US20100180426A1 (en) | 2009-01-21 | 2009-01-21 | Particle reduction treatment for gas delivery system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201034049A true TW201034049A (en) | 2010-09-16 |
Family
ID=42335784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099101681A TW201034049A (en) | 2009-01-21 | 2010-01-21 | Particle reduction treatment for gas delivery system |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100180426A1 (enExample) |
| JP (1) | JP2012516056A (enExample) |
| KR (1) | KR20110115137A (enExample) |
| CN (1) | CN102293062A (enExample) |
| TW (1) | TW201034049A (enExample) |
| WO (1) | WO2010090846A2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10559451B2 (en) * | 2017-02-15 | 2020-02-11 | Applied Materials, Inc. | Apparatus with concentric pumping for multiple pressure regimes |
| US11380557B2 (en) | 2017-06-05 | 2022-07-05 | Applied Materials, Inc. | Apparatus and method for gas delivery in semiconductor process chambers |
| US11776793B2 (en) * | 2020-11-13 | 2023-10-03 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3506885A (en) * | 1965-07-12 | 1970-04-14 | Brunswick Corp | Electric device having passage structure electrode |
| US4680897A (en) * | 1985-12-03 | 1987-07-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for machining holes in composite materials |
| US5074456A (en) * | 1990-09-18 | 1991-12-24 | Lam Research Corporation | Composite electrode for plasma processes |
| JPH11104950A (ja) * | 1997-10-03 | 1999-04-20 | Shin Etsu Chem Co Ltd | 電極板及びその製造方法 |
| US6399499B1 (en) * | 1999-09-14 | 2002-06-04 | Jeong Gey Lee | Method for fabricating an electrode of a plasma chamber |
| JP3654142B2 (ja) * | 2000-01-20 | 2005-06-02 | 住友電気工業株式会社 | 半導体製造装置用ガスシャワー体 |
| US20020127853A1 (en) * | 2000-12-29 | 2002-09-12 | Hubacek Jerome S. | Electrode for plasma processes and method for manufacture and use thereof |
| US7479304B2 (en) * | 2002-02-14 | 2009-01-20 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
| JP2004149881A (ja) * | 2002-10-31 | 2004-05-27 | Applied Materials Inc | プラズマ処理装置及び方法 |
| JP4823639B2 (ja) * | 2005-01-19 | 2011-11-24 | グランデックス株式会社 | デバリング装置 |
| TWI284075B (en) * | 2005-08-31 | 2007-07-21 | Univ Nat Central | Grinding material spiral grinding device and method thereof |
| ES2534215T3 (es) * | 2006-08-30 | 2015-04-20 | Oerlikon Metco Ag, Wohlen | Dispositivo de pulverización de plasma y un método para la introducción de un precursor líquido en un sistema de gas de plasma |
| EP1895818B1 (en) * | 2006-08-30 | 2015-03-11 | Sulzer Metco AG | Plasma spraying device and a method for introducing a liquid precursor into a plasma gas system |
| US20080131622A1 (en) * | 2006-12-01 | 2008-06-05 | White John M | Plasma reactor substrate mounting surface texturing |
| CN100577866C (zh) * | 2007-02-27 | 2010-01-06 | 中微半导体设备(上海)有限公司 | 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法 |
-
2009
- 2009-01-21 US US12/356,687 patent/US20100180426A1/en not_active Abandoned
-
2010
- 2010-01-21 WO PCT/US2010/021557 patent/WO2010090846A2/en not_active Ceased
- 2010-01-21 CN CN2010800052006A patent/CN102293062A/zh active Pending
- 2010-01-21 TW TW099101681A patent/TW201034049A/zh unknown
- 2010-01-21 KR KR1020117019299A patent/KR20110115137A/ko not_active Ceased
- 2010-01-21 JP JP2011548081A patent/JP2012516056A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110115137A (ko) | 2011-10-20 |
| JP2012516056A (ja) | 2012-07-12 |
| WO2010090846A2 (en) | 2010-08-12 |
| US20100180426A1 (en) | 2010-07-22 |
| CN102293062A (zh) | 2011-12-21 |
| WO2010090846A3 (en) | 2010-10-28 |
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