JP2012514249A - 作動温度範囲を拡張した不揮発性メモリ - Google Patents
作動温度範囲を拡張した不揮発性メモリ Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
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Abstract
【選択図】図1
Description
105 揮発性メモリ
110 不揮発性メモリ
Claims (24)
- メモリ内の温度を測定する温度センサを含む不揮発性メモリと、
前記温度がある期間にわたって閾値温度を超過した時に前記不揮発性メモリの少なくとも一部分をリフレッシュするコントローラと、
を含むことを特徴とする装置。 - 前記温度が前記閾値温度を超える期間が、2つのレベルの精度で追跡されることを特徴とする請求項1に記載の装置。
- 前記不揮発性メモリが前記閾値温度を超える温度で作動する時間の第1のレベルの精度のカウンタを格納する揮発性メモリ、
を更に含み、
前記不揮発性メモリが前記閾値温度を超える温度で作動する時間の第2のレベルの精度が、該不揮発性メモリ内に格納され、
前記第2のレベルの精度は、前記第1のレベルの精度が第1の最大カウントに到達する毎に増分され、
前記コントローラは、第2の最大カウントに到達する前記第2のレベルの精度によってトリガされた時に前記不揮発性メモリの少なくとも一部分をリフレッシュする、
ことを特徴とする請求項2に記載の装置。 - 前記不揮発性メモリは、第2のレベルの精度が前記第2の最大カウントに到達する時にトリガイベント値を格納するレジスタを含み、前記コントローラは、該トリガイベント値がリフレッシュをトリガするように設定されていると判断した時に該不揮発性メモリの少なくとも一部分をリフレッシュすることを特徴とする請求項3に記載の装置。
- 前記コントローラが前記不揮発性メモリの少なくとも一部分をリフレッシュする速度が、前記閾値温度を超える温度の上昇に対応して増大することを特徴とする請求項1に記載の装置。
- キャッシュ、
を更に含み、
前記コントローラは、前記不揮発性メモリの前記部分を前記キャッシュに複写し、該不揮発性メモリの該部分に関する読込要求を前記リフレッシュ中に該キャッシュに出力先変更する、
ことを特徴とする請求項1に記載の装置。 - 前記コントローラは、前記リフレッシュ中に読込要求を受信し、該読込要求が完了するまで該リフレッシュを中断し、かつ該リフレッシュを再開することを特徴とする請求項1に記載の装置。
- 前記コントローラは、前記リフレッシュ中に書込要求を受信し、該書込要求を該リフレッシュが完了するまで待ち行列に入れることを特徴とする請求項1に記載の装置。
- 前記不揮発性メモリは、前記コントローラが該不揮発性メモリを現在リフレッシュしているか否かを示す値を格納するレジスタを含むことを特徴とする請求項1に記載の装置。
- 前記不揮発性メモリは、該不揮発性メモリのどの部分が現在リフレッシュされているかを示す値を格納するレジスタを含むことを特徴とする請求項1に記載の装置。
- メモリ内の温度を測定する温度センサを含む不揮発性メモリと、
前記温度が閾値温度を超える期間中の該温度の積分を判断し、該積分が閾値を超過した時に前記不揮発性メモリの少なくとも一部分をリフレッシュするコントローラと、
を含むことを特徴とする装置。 - 前記コントローラは、前記温度が前記閾値温度を超える期間中の該温度の前記積分を該温度が該閾値温度を超えた以前の期間中の該温度の1つ又はそれよりも多くの積分に加算し、該積分の合計が前記閾値を超えた時に前記不揮発性メモリの少なくとも一部分をリフレッシュすることを特徴とする請求項11に記載の装置。
- 不揮発性メモリ内の温度を測定する段階と、
ある期間にわたって前記温度が閾値温度を超過した時に前記不揮発性メモリの少なくとも一部分をリフレッシュする段階と、
を含むことを特徴とする方法。 - 前記温度が前記閾値温度を超える期間が、2つのレベルの精度で追跡されることを特徴とする請求項13に記載の方法。
- 第1のレベルの精度が、前記温度が前記閾値温度を超過する期間中に定期的に増分され、
第2のレベルの精度が、前記第1のレベルの精度が第1の最大カウントに到達する毎に増分され、
前記不揮発性メモリの少なくとも一部分が、前記第2のレベルの精度が第2の最大カウントに到達した時にリフレッシュされる、
ことを特徴とする請求項14に記載の方法。 - 第2のレベルの精度が前記第2の最大カウントに到達した時にトリガイベント値を格納する段階と、
前記トリガイベント値がリフレッシュをトリガするように設定されていると判断する段階と、
を更に含み、
前記不揮発性メモリの少なくとも一部分をリフレッシュする前記段階は、前記判断に応答して開始される、
ことを特徴とする請求項15に記載の方法。 - 前記コントローラが前記不揮発性メモリの少なくとも一部分をリフレッシュする速度が、前記閾値温度を超える温度の上昇に対応して増大することを特徴とする請求項13に記載の方法。
- 前記不揮発性メモリの前記部分をキャッシュに複写する段階と、
前記リフレッシュ中に前記不揮発性メモリの前記部分に関する読込要求を受信する段階と、
前記読込要求を前記キャッシュに出力先変更する段階と、
を更に含むことを特徴とする請求項13に記載の方法。 - 前記リフレッシュ中に読込要求を受信する段階と、
前記読込要求が完了するまで前記リフレッシュを中断する段階と、
前記リフレッシュを再開する段階と、
を更に含むことを特徴とする請求項13に記載の方法。 - 前記リフレッシュ中に書込要求を受信する段階と、
前記書込要求を待ち行列に入れる段階と、
前記リフレッシュが完了した状態で前記待ち行列から1つ又はそれよりも多くの書込要求を実行する段階と、
を更に含むことを特徴とする請求項13に記載の方法。 - 前記コントローラが前記不揮発性メモリを現在リフレッシュしているか否かを示す値を格納する段階、
を更に含むことを特徴とする請求項13に記載の方法。 - 前記不揮発性メモリのどの部分が現在リフレッシュされているかを示す値を格納する段階、
を更に含むことを特徴とする請求項13に記載の方法。 - 不揮発性メモリ内の温度を測定する段階と、
前記温度が閾値温度を超える期間中に該温度の積分を判断する段階と、
前記積分が閾値を超過する時に前記不揮発性メモリの少なくとも一部分をリフレッシュする段階と、
を含むことを特徴とする方法。 - 前記温度が前記閾値温度を超える期間中の該温度の前記積分を該温度が該閾値温度を超えた以前の期間中の該温度の1つ又はそれよりも多くの積分に加算する段階と、
前記積分の合計が前記閾値を超えた時に前記不揮発性メモリの少なくとも一部分をリフレッシュする段階と、
を更に含むことを特徴とする請求項23に記載の方法。
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PCT/IT2008/000816 WO2010076828A1 (en) | 2008-12-30 | 2008-12-30 | Non-volatile memory with extended operating temperature range |
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KR (1) | KR20110111551A (ja) |
CN (1) | CN101889313B (ja) |
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Also Published As
Publication number | Publication date |
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TWI445003B (zh) | 2014-07-11 |
US20110302353A1 (en) | 2011-12-08 |
CN101889313B (zh) | 2014-12-03 |
DE112008000968T5 (de) | 2012-01-12 |
KR20110111551A (ko) | 2011-10-12 |
US8572333B2 (en) | 2013-10-29 |
TW201025334A (en) | 2010-07-01 |
CN101889313A (zh) | 2010-11-17 |
WO2010076828A1 (en) | 2010-07-08 |
JP5834303B2 (ja) | 2015-12-16 |
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