JP2012514071A - ナノ結晶および生成された組成物をカプセル化するための方法 - Google Patents

ナノ結晶および生成された組成物をカプセル化するための方法 Download PDF

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JP2012514071A
JP2012514071A JP2011543486A JP2011543486A JP2012514071A JP 2012514071 A JP2012514071 A JP 2012514071A JP 2011543486 A JP2011543486 A JP 2011543486A JP 2011543486 A JP2011543486 A JP 2011543486A JP 2012514071 A JP2012514071 A JP 2012514071A
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substrate
disposing
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luminescent
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ロバート・エス・ダブロー
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ナノシス・インク．
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06—Joining glass to glass by processes other than fusing
    • C03C27/10—Joining glass to glass by processes other than fusing with the aid of adhesive specially adapted for that purpose
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
JP2011543486A 2008-12-30 2008-12-30 ナノ結晶および生成された組成物をカプセル化するための方法 Pending JP2012514071A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2008/014112 WO2010077226A1 (en) 2008-12-30 2008-12-30 Methods for encapsulating nanocrystals and resulting compositions

Publications (1)

Publication Number Publication Date
JP2012514071A true JP2012514071A (ja) 2012-06-21

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JP2011543486A Pending JP2012514071A (ja) 2008-12-30 2008-12-30 ナノ結晶および生成された組成物をカプセル化するための方法

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Country Link
EP (1) EP2370993A1 (zh)
JP (1) JP2012514071A (zh)
KR (1) KR20110111391A (zh)
CN (1) CN102257599A (zh)
WO (1) WO2010077226A1 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150041086A (ko) * 2012-08-06 2015-04-15 코닌클리케 필립스 엔.브이. 고체 조명용의 고도로 안정된 qd들의 복합물들 및 개시제 없는 중합을 통한 그 제조 방법
JP2015149469A (ja) * 2014-02-05 2015-08-20 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． バックライトアセンブリ
JP2015204153A (ja) * 2014-04-11 2015-11-16 日本電気硝子株式会社 発光デバイスの製造方法
JP2017513230A (ja) * 2014-04-04 2017-05-25 コーニング精密素材株式会社Corning Precision Materials Co., Ltd. 発光ダイオードの色変換用基板及びその製造方法
JP2017120358A (ja) * 2015-09-30 2017-07-06 大日本印刷株式会社 光波長変換シート、これを備えるバックライト装置、画像表示装置、および光波長変換シートの製造方法
JP2019200395A (ja) * 2018-05-18 2019-11-21 シャープ株式会社 立体表示装置

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US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US9056783B2 (en) 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US8958917B2 (en) 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US8343575B2 (en) 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
KR20200039806A (ko) 2010-11-10 2020-04-16 나노시스, 인크. 양자 도트 필름들, 조명 디바이스들, 및 조명 방법들
KR101710212B1 (ko) * 2010-12-28 2017-02-24 엘지전자 주식회사 광소자 및 이를 이용한 발광 다이오드 패키지, 백라이트 장치
US20130092964A1 (en) * 2011-10-13 2013-04-18 Intematix Corporation Highly reliable photoluminescent materials having a thick and uniform titanium dioxide coating
KR101362263B1 (ko) * 2012-01-30 2014-02-13 국민대학교산학협력단 광산란을 최소화하는 형광체-기지 복합체 분말 및 이를 포함하는 ｌｅｄ 구조체
KR20140032811A (ko) 2012-09-07 2014-03-17 삼성전자주식회사 백라이트 유닛 및 이를 구비한 액정 디스플레이 장치
KR101673508B1 (ko) * 2013-03-14 2016-11-07 나노코 테크놀로지스 리미티드 다층 코팅된 양자점 비드들
WO2015024008A1 (en) * 2013-08-16 2015-02-19 Qd Vision, Inc. Methods for making optical components, optical components, and products including same
DE102015114175A1 (de) * 2015-08-26 2017-03-16 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von lichtemittierenden Halbleiterbauteilen und lichtemittierendes Halbleiterbauteil
WO2017197392A1 (en) * 2016-05-13 2017-11-16 Osram Sylvania Inc. Wavelength converters including a porous matrix, lighting devices including the same, and methods of forming the same
CN108264905A (zh) 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108728097B (zh) * 2017-04-14 2021-05-25 中国科学院宁波材料技术与工程研究所 一种荧光介质及包含其的发光元件
CN113444520B (zh) * 2021-06-25 2022-03-25 佛山安亿纳米材料有限公司 具有包覆层的硫化物荧光体及制备具有包覆层的硫化物荧光体的磁控溅射法

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JP2004179644A (ja) * 2002-11-12 2004-06-24 Nichia Chem Ind Ltd 蛍光体積層構造及びそれを用いる光源
JP2005514744A (ja) * 2002-01-11 2005-05-19 チ・エレ・エッフェ・ソシエタ・コンソルティーレ・ペル・アチオニ エレクトロルミネセンス装置
JP2005209852A (ja) * 2004-01-22 2005-08-04 Nichia Chem Ind Ltd 発光デバイス
JP2005538573A (ja) * 2002-09-05 2005-12-15 ナノシス・インク． ナノ構造及びナノ複合材をベースとする組成物
JP2007173754A (ja) * 2005-11-28 2007-07-05 Kyocera Corp 波長変換器および発光装置
WO2008115498A1 (en) * 2007-03-19 2008-09-25 Nanosys, Inc. Methods for encapsulating nanocrystals

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US5482890A (en) * 1994-10-14 1996-01-09 National Science Council Method of fabricating quantum dot structures
FR2818439B1 (fr) * 2000-12-18 2003-09-26 Commissariat Energie Atomique Procede de fabrication d'un ilot de matiere confine entre des electrodes, et applications aux transistors
GB0220063D0 (en) * 2002-08-29 2002-10-09 Isis Innovation Magnetic particle and process for preparation

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2005514744A (ja) * 2002-01-11 2005-05-19 チ・エレ・エッフェ・ソシエタ・コンソルティーレ・ペル・アチオニ エレクトロルミネセンス装置
JP2005538573A (ja) * 2002-09-05 2005-12-15 ナノシス・インク． ナノ構造及びナノ複合材をベースとする組成物
JP2004179644A (ja) * 2002-11-12 2004-06-24 Nichia Chem Ind Ltd 蛍光体積層構造及びそれを用いる光源
JP2005209852A (ja) * 2004-01-22 2005-08-04 Nichia Chem Ind Ltd 発光デバイス
JP2007173754A (ja) * 2005-11-28 2007-07-05 Kyocera Corp 波長変換器および発光装置
WO2008115498A1 (en) * 2007-03-19 2008-09-25 Nanosys, Inc. Methods for encapsulating nanocrystals

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150041086A (ko) * 2012-08-06 2015-04-15 코닌클리케 필립스 엔.브이. 고체 조명용의 고도로 안정된 qd들의 복합물들 및 개시제 없는 중합을 통한 그 제조 방법
JP2015527717A (ja) * 2012-08-06 2015-09-17 コーニンクレッカ フィリップス エヌ ヴェ 固体照明に対する高安定なｑｄ複合体及び開始剤のない重合を介したその作製方法
KR102093258B1 (ko) 2012-08-06 2020-03-26 루미리즈 홀딩 비.브이. 고체 조명용의 고도로 안정된 qd들의 복합물들 및 개시제 없는 중합을 통한 그 제조 방법
JP2015149469A (ja) * 2014-02-05 2015-08-20 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． バックライトアセンブリ
JP2017513230A (ja) * 2014-04-04 2017-05-25 コーニング精密素材株式会社Corning Precision Materials Co., Ltd. 発光ダイオードの色変換用基板及びその製造方法
JP2015204153A (ja) * 2014-04-11 2015-11-16 日本電気硝子株式会社 発光デバイスの製造方法
JP2017120358A (ja) * 2015-09-30 2017-07-06 大日本印刷株式会社 光波長変換シート、これを備えるバックライト装置、画像表示装置、および光波長変換シートの製造方法
JP2019200395A (ja) * 2018-05-18 2019-11-21 シャープ株式会社 立体表示装置
JP7079146B2 (ja) 2018-05-18 2022-06-01 シャープ株式会社 立体表示装置

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CN102257599A (zh) 2011-11-23
KR20110111391A (ko) 2011-10-11
WO2010077226A1 (en) 2010-07-08
EP2370993A1 (en) 2011-10-05

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