JP2012512569A - 増幅器の線形性を改善するための技術 - Google Patents
増幅器の線形性を改善するための技術 Download PDFInfo
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- JP2012512569A JP2012512569A JP2011540941A JP2011540941A JP2012512569A JP 2012512569 A JP2012512569 A JP 2012512569A JP 2011540941 A JP2011540941 A JP 2011540941A JP 2011540941 A JP2011540941 A JP 2011540941A JP 2012512569 A JP2012512569 A JP 2012512569A
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000003990 capacitor Substances 0.000 claims abstract description 6
- 230000010363 phase shift Effects 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/168—Two amplifying stages are coupled by means of a filter circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/456—A scaled replica of a transistor being present in an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/492—A coil being added in the source circuit of a transistor amplifier stage as degenerating element
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
【選択図】図3
Description
Claims (15)
- カスコード増幅器の線形性を改善する方法であって、
入力電圧を受け付けることと、
前記入力電圧に基づいて主カスコード電流を生成することと、
前記増幅器のカスコードノードにおける信号を、位相シフトネットワークを介して共通ゲート増幅器の前記ソースに結合させることと、
前記共通ゲート増幅器を用いて補助カスコード電流を生成することと、
前記共通ゲート増幅器をバイアスして、前記主カスコード電流内の歪み成分を打ち消すことと、
前記補助カスコード電流と前記主カスコード電流とを組み合わせて、前記カスコード増幅器の出力電流を生成することと、を具備する方法。 - 前記補助カスコード電流を生成することは、
前記共通ゲート増幅器によって生成される前記電流を、第2(secondary)の共通ゲート増幅器に結合させること、を具備し、
前記方法は、更に
前記第2の共通ゲート増幅器をバイアスして、前記主カスコード電流内の歪み成分を更に打ち消すことを具備する請求項1の方法。 - 前記位相シフトネットワークは、直列のキャパシタ及びインダクタを備え、前記共通ゲート増幅器の前記ソースが前記インダクタに結合される請求項1の方法。
- 前記カスコード増幅器の出力電流を負荷に結合させることを更に具備し、前記カスコード増幅器の出力電圧は前記負荷から生成される請求項1の方法。
- 前記共通ゲート増幅器は、前記主カスコード電流内の歪み成分を打ち消すための寸法とされる請求項1の方法。
- 線形性を改善するカスコード増幅器であって、
カスコード構成で結合され、出力及びカスコードノードを有する主カスコード分岐を形成する第1の主トランジスタ及び第2の主トランジスタと、
前記カスコードノードに結合される位相シフトネットワークと、
出力が前記主カスコード分岐の前記出力に結合され、前記位相シフトネットワークの前記出力に結合される入力を有する共通ゲート増幅器と
を具備する装置。 - 前記共通ゲート増幅器の前記出力に結合される入力を有し、出力が前記主カスコード分岐の前記出力に結合される第2の共通ゲート増幅器を更に具備する請求項6の装置。
- 前記主カスコード分岐の前記出力は負荷に結合される請求項6の装置。
- 前記位相シフトネットワークは、直列のキャパシタとインダクタとを備え、前記共通ゲート増幅器の前記ソースは前記インダクタに結合される請求項6の装置。
- 前記共通ゲート増幅器は、前記主カスコード電流における歪み成分を打ち消すための寸法とされる請求項6の装置。
- 前記第2の共通ゲート増幅器は、前記主カスコード電流における歪み成分を打ち消すための寸法とされる請求項7の装置。
- 線形性を改善し、入力電圧を受け付けるカスコード増幅器装置であって、
前記入力電圧に基づいて主カスコード電流を生成する手段と、
出力電流を生成するために前記主カスコード電流に結合される補助カスコード電流を生成する手段と、
前記増幅器のカスコードノードにおける信号を、補助カスコード電流を生成する前記手段に結合させる手段と、を具備する装置。 - 主カスコード電流を生成する前記手段は、カスコード構成で結合された第1及び第2の主トランジスタを具備する請求項12の装置。
- 前記増幅器のカスコードノードにおける信号を結合する前記手段は、直列のキャパシタとインダクタとを具備する請求項12の装置。
- 補助カスコード電流を生成する前記手段は、少なくとも1つの共通ゲート増幅器を具備する請求項12の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/334,306 US7936220B2 (en) | 2008-12-12 | 2008-12-12 | Techniques for improving amplifier linearity |
US12/334,306 | 2008-12-12 | ||
PCT/US2009/067771 WO2010068926A1 (en) | 2008-12-12 | 2009-12-11 | Techniques for improving amplifier linearity |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012512569A true JP2012512569A (ja) | 2012-05-31 |
JP5378536B2 JP5378536B2 (ja) | 2013-12-25 |
Family
ID=42101776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011540941A Active JP5378536B2 (ja) | 2008-12-12 | 2009-12-11 | 増幅器の線形性を改善するための技術 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7936220B2 (ja) |
EP (1) | EP2377241B1 (ja) |
JP (1) | JP5378536B2 (ja) |
KR (1) | KR101232412B1 (ja) |
CN (1) | CN102246411B (ja) |
TW (1) | TW201101676A (ja) |
WO (1) | WO2010068926A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8242847B1 (en) * | 2009-08-05 | 2012-08-14 | Marvell International Ltd. | Method and apparatus for improving amplifier linearity |
FR2955219B1 (fr) * | 2010-01-14 | 2012-08-31 | St Microelectronics Sa | Amplificateur dephaseur |
US8373503B1 (en) * | 2011-12-12 | 2013-02-12 | Linear Technology Corporation | Third order intermodulation cancellation for RF transconductors |
US9100007B2 (en) * | 2011-12-23 | 2015-08-04 | Analog Devices, Inc. | Cascode amplifier |
US9124228B2 (en) | 2013-04-04 | 2015-09-01 | Qualcomm Incorporated | Amplifiers with boosted or deboosted source degeneration inductance |
EP2913922A1 (en) | 2014-02-28 | 2015-09-02 | Telefonaktiebolaget L M Ericsson (publ) | A low noise amplifier circuit |
US9438188B2 (en) * | 2014-09-15 | 2016-09-06 | Qualcomm Incorporated | Common-gate amplifier for high-speed DC-coupling communications |
US9385901B2 (en) | 2014-11-13 | 2016-07-05 | Qualcomm Incorporated | Receiver front end architecture for intra band carrier aggregation |
KR102585866B1 (ko) * | 2016-06-21 | 2023-10-06 | 삼성전기주식회사 | 공통 게이트 증폭 회로 및 그것을 이용한 전력 증폭기 |
CN109643973B (zh) * | 2016-08-25 | 2022-05-13 | 华为技术有限公司 | 集成放大器 |
CN106330109B (zh) * | 2016-08-31 | 2019-02-12 | 中国科学院微电子研究所 | 共源共栅放大电路及功率放大器 |
US10141894B1 (en) * | 2017-07-03 | 2018-11-27 | Qualcomm Incorporated | Radio frequency (RF) amplifier |
US11070176B2 (en) * | 2018-02-13 | 2021-07-20 | Mediatek Singapore Pte. Ltd. | Amplifier linearization and related apparatus thereof |
TWI643449B (zh) * | 2018-04-27 | 2018-12-01 | 立積電子股份有限公司 | 放大器 |
US10931244B2 (en) * | 2018-06-26 | 2021-02-23 | Efficient Power Conversion Corporation | Common gate amplifier with high isolation from output to input |
CN111064437A (zh) * | 2018-10-17 | 2020-04-24 | 中兴通讯股份有限公司 | 一种预失真电路 |
TWI745794B (zh) * | 2019-02-12 | 2021-11-11 | 新加坡商聯發科技(新加坡)私人有限公司 | 放大器線性化裝置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63132509A (ja) * | 1986-09-02 | 1988-06-04 | テクトロニックス・インコーポレイテッド | Fet増幅器 |
JPH01503114A (ja) * | 1987-04-13 | 1989-10-19 | ヒユーズ・エアクラフト・カンパニー | 広帯域の、高速ビデオ増幅器 |
JPH1168471A (ja) * | 1997-06-27 | 1999-03-09 | Whitaker Corp:The | トランジスタ増幅器 |
JP2004112299A (ja) * | 2002-09-18 | 2004-04-08 | Sony Corp | 可変利得増幅器 |
WO2007016552A1 (en) * | 2005-08-02 | 2007-02-08 | Qualcomm Incorporated | Amplifier with active post-distortion linearization |
Family Cites Families (5)
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US5942929A (en) * | 1997-05-22 | 1999-08-24 | Qualcomm Incorporated | Active phase splitter |
US6972629B2 (en) | 2003-10-14 | 2005-12-06 | Broadcom Corporation | Modulation dependent biasing for efficient and high-linearity power amplifiers |
US7889007B2 (en) * | 2005-08-02 | 2011-02-15 | Qualcomm, Incorporated | Differential amplifier with active post-distortion linearization |
US7696828B2 (en) * | 2008-01-04 | 2010-04-13 | Qualcomm, Incorporated | Multi-linearity mode LNA having a deboost current path |
US7656229B2 (en) * | 2008-01-28 | 2010-02-02 | Qualcomm, Incorporated | Method and apparatus for reducing intermodulation distortion in an electronic device having an amplifier circuit |
-
2008
- 2008-12-12 US US12/334,306 patent/US7936220B2/en active Active
-
2009
- 2009-12-11 KR KR1020117015564A patent/KR101232412B1/ko not_active IP Right Cessation
- 2009-12-11 WO PCT/US2009/067771 patent/WO2010068926A1/en active Application Filing
- 2009-12-11 CN CN200980149817.2A patent/CN102246411B/zh active Active
- 2009-12-11 JP JP2011540941A patent/JP5378536B2/ja active Active
- 2009-12-11 EP EP09793667A patent/EP2377241B1/en active Active
- 2009-12-11 TW TW098142674A patent/TW201101676A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63132509A (ja) * | 1986-09-02 | 1988-06-04 | テクトロニックス・インコーポレイテッド | Fet増幅器 |
JPH01503114A (ja) * | 1987-04-13 | 1989-10-19 | ヒユーズ・エアクラフト・カンパニー | 広帯域の、高速ビデオ増幅器 |
JPH1168471A (ja) * | 1997-06-27 | 1999-03-09 | Whitaker Corp:The | トランジスタ増幅器 |
JP2004112299A (ja) * | 2002-09-18 | 2004-04-08 | Sony Corp | 可変利得増幅器 |
WO2007016552A1 (en) * | 2005-08-02 | 2007-02-08 | Qualcomm Incorporated | Amplifier with active post-distortion linearization |
Non-Patent Citations (1)
Title |
---|
JPN6012059199; S.Ock,S.Hong,S.Han,J.Lee: '"A 27.7dBm OIP3 SiGe HBT cascode LNA using IM3 cancellation technique"' IEEE RFIC Symposium Digest , 200606, pp.155-158, IEEE * |
Also Published As
Publication number | Publication date |
---|---|
WO2010068926A1 (en) | 2010-06-17 |
TW201101676A (en) | 2011-01-01 |
CN102246411A (zh) | 2011-11-16 |
EP2377241A1 (en) | 2011-10-19 |
CN102246411B (zh) | 2015-01-07 |
EP2377241B1 (en) | 2012-10-31 |
KR101232412B1 (ko) | 2013-02-12 |
US7936220B2 (en) | 2011-05-03 |
KR20110092352A (ko) | 2011-08-17 |
US20100148873A1 (en) | 2010-06-17 |
JP5378536B2 (ja) | 2013-12-25 |
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