JP2012512126A5 - - Google Patents

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Publication number
JP2012512126A5
JP2012512126A5 JP2011542082A JP2011542082A JP2012512126A5 JP 2012512126 A5 JP2012512126 A5 JP 2012512126A5 JP 2011542082 A JP2011542082 A JP 2011542082A JP 2011542082 A JP2011542082 A JP 2011542082A JP 2012512126 A5 JP2012512126 A5 JP 2012512126A5
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JP
Japan
Prior art keywords
ingot
application publication
reduced
prior
silicon
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JP2011542082A
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English (en)
Japanese (ja)
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JP2012512126A (ja
JP5759382B2 (ja
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Priority claimed from UAA200814479A external-priority patent/UA92392C2/uk
Application filed filed Critical
Priority claimed from PCT/UA2009/000067 external-priority patent/WO2010071614A1/en
Publication of JP2012512126A publication Critical patent/JP2012512126A/ja
Publication of JP2012512126A5 publication Critical patent/JP2012512126A5/ja
Application granted granted Critical
Publication of JP5759382B2 publication Critical patent/JP5759382B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011542082A 2008-12-15 2009-12-14 誘導法により多結晶シリコンインゴットを製造する方法 Expired - Fee Related JP5759382B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
UAA200814479 2008-12-15
UAA200814479A UA92392C2 (uk) 2008-12-15 2008-12-15 Спосіб одержання зливків полікристалічного кремнію індукційним методом та пристрій для його здійснення
PCT/UA2009/000067 WO2010071614A1 (en) 2008-12-15 2009-12-14 Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same

Publications (3)

Publication Number Publication Date
JP2012512126A JP2012512126A (ja) 2012-05-31
JP2012512126A5 true JP2012512126A5 (https=) 2013-02-07
JP5759382B2 JP5759382B2 (ja) 2015-08-05

Family

ID=56555903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011542082A Expired - Fee Related JP5759382B2 (ja) 2008-12-15 2009-12-14 誘導法により多結晶シリコンインゴットを製造する方法

Country Status (6)

Country Link
US (2) US20110247364A1 (https=)
EP (1) EP2376244B1 (https=)
JP (1) JP5759382B2 (https=)
KR (1) KR101335147B1 (https=)
CN (1) CN102438773B (https=)
WO (1) WO2010071614A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102120579B (zh) * 2011-01-29 2012-10-03 大连隆田科技有限公司 一种电子束高效、连续熔炼提纯多晶硅的方法及设备
CN104805506B (zh) * 2015-03-24 2017-06-16 中国科学院工程热物理研究所 一种基于液态金属强化换热控制坩埚热应力的方法
CN106735078B (zh) * 2016-11-18 2019-07-05 中国科学院金属研究所 一种非晶合金或其复合材料的连续精密成形设备和工艺
CN111230077A (zh) * 2020-03-09 2020-06-05 西北工业大学 高温合金宽调速定向凝固装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4572812A (en) 1984-08-13 1986-02-25 The United States Of America As Represented By The Secretary Of Energy Method and apparatus for casting conductive and semiconductive materials
EP0349904B1 (en) 1988-07-05 1994-02-23 Sumitomo Sitix Co., Ltd. Apparatus for casting silicon
JPH07138012A (ja) * 1993-11-16 1995-05-30 Sumitomo Sitix Corp シリコン鋳造装置
DE19607098C2 (de) * 1996-02-24 1999-06-17 Ald Vacuum Techn Gmbh Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel
DE60037944T2 (de) 2000-12-28 2009-01-22 Sumco Corp. Kontinuierliches giessverfahren für silizium
CN2715885Y (zh) * 2004-07-08 2005-08-10 上海大学 梯度强磁场单向凝固结晶装置
CN1275724C (zh) * 2004-08-11 2006-09-20 哈尔滨工业大学 多功能冷坩埚电磁精确成形与定向凝固装置
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
JP2007051026A (ja) * 2005-08-18 2007-03-01 Sumco Solar Corp シリコン多結晶の鋳造方法
DE602006019317D1 (de) * 2005-11-29 2011-02-10 Seiko Instr Inc Prozess zur display-herstellung und laminationsverfahren
CN1873062A (zh) * 2006-05-06 2006-12-06 大连理工大学 一种太阳能电池用高纯多晶硅的制备方法和装置
JP2008156166A (ja) * 2006-12-25 2008-07-10 Sumco Solar Corp シリコンインゴットの鋳造方法および切断方法
CN101307487B (zh) * 2007-05-16 2010-05-19 佳科太阳能硅(厦门)有限公司 一种连续生产多晶硅锭的定向凝固方法及其装置

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