JP2012509194A - まばらなパターンを有するマスクを介したレーザーアブレーションツール - Google Patents

まばらなパターンを有するマスクを介したレーザーアブレーションツール Download PDF

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Publication number
JP2012509194A
JP2012509194A JP2011537454A JP2011537454A JP2012509194A JP 2012509194 A JP2012509194 A JP 2012509194A JP 2011537454 A JP2011537454 A JP 2011537454A JP 2011537454 A JP2011537454 A JP 2011537454A JP 2012509194 A JP2012509194 A JP 2012509194A
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JP
Japan
Prior art keywords
pattern
mask
substrate
features
opening
Prior art date
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Pending
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JP2011537454A
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English (en)
Japanese (ja)
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JP2012509194A5 (enrdf_load_stackoverflow
Inventor
アール． コリガン，トーマス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
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3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2012509194A publication Critical patent/JP2012509194A/ja
Publication of JP2012509194A5 publication Critical patent/JP2012509194A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
JP2011537454A 2008-11-21 2009-10-13 まばらなパターンを有するマスクを介したレーザーアブレーションツール Pending JP2012509194A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/275,669 US20100129617A1 (en) 2008-11-21 2008-11-21 Laser ablation tooling via sparse patterned masks
US12/275,669 2008-11-21
PCT/US2009/060402 WO2010059310A2 (en) 2008-11-21 2009-10-13 Laser ablation tooling via sparse patterned masks

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015181854A Division JP6117881B2 (ja) 2008-11-21 2015-09-15 互いに離隔するパターンを備えるマスク

Publications (2)

Publication Number Publication Date
JP2012509194A true JP2012509194A (ja) 2012-04-19
JP2012509194A5 JP2012509194A5 (enrdf_load_stackoverflow) 2012-12-06

Family

ID=42196564

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011537454A Pending JP2012509194A (ja) 2008-11-21 2009-10-13 まばらなパターンを有するマスクを介したレーザーアブレーションツール
JP2015181854A Active JP6117881B2 (ja) 2008-11-21 2015-09-15 互いに離隔するパターンを備えるマスク

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015181854A Active JP6117881B2 (ja) 2008-11-21 2015-09-15 互いに離隔するパターンを備えるマスク

Country Status (6)

Country Link
US (2) US20100129617A1 (enrdf_load_stackoverflow)
EP (1) EP2359389A4 (enrdf_load_stackoverflow)
JP (2) JP2012509194A (enrdf_load_stackoverflow)
KR (1) KR101716908B1 (enrdf_load_stackoverflow)
CN (1) CN102217036B (enrdf_load_stackoverflow)
WO (1) WO2010059310A2 (enrdf_load_stackoverflow)

Families Citing this family (13)

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US20100129617A1 (en) * 2008-11-21 2010-05-27 Corrigan Thomas R Laser ablation tooling via sparse patterned masks
US20110070398A1 (en) 2009-09-18 2011-03-24 3M Innovative Properties Company Laser ablation tooling via distributed patterned masks
KR101135537B1 (ko) * 2010-07-16 2012-04-13 삼성모바일디스플레이주식회사 레이저 조사 장치
CN102789125B (zh) * 2012-07-27 2013-11-13 京东方科技集团股份有限公司 隔垫物制作方法
US9142778B2 (en) * 2013-11-15 2015-09-22 Universal Display Corporation High vacuum OLED deposition source and system
WO2016124712A2 (en) * 2015-02-05 2016-08-11 Mycronic AB Recurring process for laser induced forward transfer and high throughput and recycling of donor material by the reuse of a plurality of target substrate plates or forward transfer of a pattern of discrete donor dots
CN108602161B (zh) * 2016-07-08 2020-06-26 华为技术有限公司 一种用于对壳体表面进行光处理的方法和装置
US20190084087A1 (en) * 2017-02-09 2019-03-21 Us Synthetic Corporation Energy machined polycrystalline diamond compact and related methods
WO2018212365A1 (ko) * 2017-05-15 2018-11-22 전자부품연구원 그래핀 제조방법
CN108907482B (zh) * 2018-09-26 2024-01-02 无锡先导智能装备股份有限公司 激光跳转型极耳切割成型装置的使用方法及激光模切机
US11353995B2 (en) * 2019-04-15 2022-06-07 Elo Touch Solutions, Inc. Laser-ablated gradient region of a touchscreen
FR3098137B1 (fr) * 2019-07-02 2022-07-15 Aptar France Sas Procédé de fabrication d’une paroi de distribution
KR20210142049A (ko) 2020-05-15 2021-11-24 삼성디스플레이 주식회사 표시 장치, 마스크 조립체, 표시 장치의 제조장치 및 표시 장치의 제조방법

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JP2000021696A (ja) * 1998-07-03 2000-01-21 Komatsu Ltd レーザマーキング装置及びそれを用いたレーザマーキング方法
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JP2008012543A (ja) * 2006-07-03 2008-01-24 Fuji Xerox Co Ltd レーザー加工装置、レーザー加工方法及び液滴吐出ヘッドの製造方法

Also Published As

Publication number Publication date
JP2015231638A (ja) 2015-12-24
JP6117881B2 (ja) 2017-04-19
KR101716908B1 (ko) 2017-03-17
US20170285457A1 (en) 2017-10-05
US20100129617A1 (en) 2010-05-27
WO2010059310A3 (en) 2010-07-15
CN102217036A (zh) 2011-10-12
KR20110095365A (ko) 2011-08-24
CN102217036B (zh) 2014-04-23
EP2359389A4 (en) 2014-08-20
EP2359389A2 (en) 2011-08-24
WO2010059310A2 (en) 2010-05-27

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