JP2012248573A - Light emitting device - Google Patents

Light emitting device Download PDF

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JP2012248573A
JP2012248573A JP2011117117A JP2011117117A JP2012248573A JP 2012248573 A JP2012248573 A JP 2012248573A JP 2011117117 A JP2011117117 A JP 2011117117A JP 2011117117 A JP2011117117 A JP 2011117117A JP 2012248573 A JP2012248573 A JP 2012248573A
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led chip
substrate
light emitting
electrodes
insulating structure
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Takayuki Nakao
貴行 中尾
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

PROBLEM TO BE SOLVED: To achieve both insulation quality and heat radiation performance for a mounting method of a light emitting element using conductive adhesives.SOLUTION: An LED light source 10 includes: an LED chip 11; conductive adhesives 13a, 13b; an insulation structure 14; a substrate 16; and a resist layer 17. Two pieces of wiring 15a, 15b are provided on a surface of the substrate 16. Two electrode 12a, 12b are provided on a bottom surface of the LED chip 11. The bottom surface side of the LED chip 11 is mounted on the front surface side of the substrate 16 through the two conductive adhesives 13a, 13b. The insulation structure 14 is provided at an area which is disposed between the surface of the substrate 16 and the bottom surface of the LED chip 11 and is located between the two conductive adhesives 13a, 13b.

Description

本発明は、発光装置に関するものである。本発明は、特に、接着面に電極を持つLED(発光ダイオード)チップを配線基板上に取り付けたLED光源に関するものである。   The present invention relates to a light emitting device. The present invention particularly relates to an LED light source in which an LED (light emitting diode) chip having an electrode on an adhesive surface is mounted on a wiring board.

従来、一部のLED光源においては発光素子の下部に電極を設け、導電性接着剤を利用して配線基板に接続されるLEDチップの実装方法が利用されている。金属共晶接合に比べて低温での接合が可能であるため、LEDチップを実装する配線基板の選択肢が広がる利点がある(例えば、特許文献1,2参照)。   2. Description of the Related Art Conventionally, in some LED light sources, an LED chip mounting method in which an electrode is provided below a light emitting element and connected to a wiring board using a conductive adhesive is used. Since bonding at a low temperature is possible compared to metal eutectic bonding, there is an advantage that options for a wiring board on which an LED chip is mounted are widened (for example, see Patent Documents 1 and 2).

特開平11−168235号公報JP-A-11-168235 特開2007−49045号公報JP 2007-49045 A

特許文献1の実装形態においては、導電性接着剤の熱伝導率が悪く、さらに接続用のバンプが存在し、放熱性に課題があった。導電性接着剤の金属導電粒子の密度を上げることで熱伝導率が改善するが、電極間の絶縁性を考慮する必要があるため、一定以上の配合量にすることができなかった。   In the mounting form of Patent Document 1, the heat conductivity of the conductive adhesive is poor, and there are bumps for connection, and there is a problem in heat dissipation. Although the thermal conductivity is improved by increasing the density of the metal conductive particles of the conductive adhesive, it is necessary to consider the insulation between the electrodes, so that the blending amount cannot exceed a certain level.

特許文献2の半導体装置では、LEDチップの構造により上記の課題に対処しているが、LEDチップ側の構造が複雑になっている。さらに電極間の距離がある程度必要となり、放熱性に改善の余地がある。   In the semiconductor device of Patent Document 2, the above problem is addressed by the structure of the LED chip, but the structure on the LED chip side is complicated. Furthermore, some distance between the electrodes is required, and there is room for improvement in heat dissipation.

本発明は、例えば、導電性接着剤を利用した発光素子の実装方法で絶縁性と放熱性とを両立させることを目的とする。   An object of the present invention is to achieve both insulation and heat dissipation in a method for mounting a light emitting element using a conductive adhesive, for example.

本発明の一の態様に係る発光装置は、
2つの配線が設けられた表面を有する基板と、
2つの電極が設けられた底面を有する発光素子であり、前記2つの配線の一方と前記2つの電極の一方とを電気接続する導電性接着剤と、前記2つの配線の他方と前記2つの電極の他方とを電気接続する導電性接着剤との2つの導電性接着剤を介して、当該底面側が前記基板の表面側に実装される発光素子と、
前記基板の表面と前記発光素子の底面との間に設けられ、かつ、前記2つの導電性接着剤の間に設けられる絶縁部材とを備える。
A light emitting device according to one embodiment of the present invention includes:
A substrate having a surface provided with two wirings;
A light-emitting element having a bottom surface provided with two electrodes, a conductive adhesive electrically connecting one of the two wirings and one of the two electrodes, the other of the two wirings, and the two electrodes A light emitting element whose bottom surface is mounted on the surface side of the substrate via two conductive adhesives and a conductive adhesive that electrically connects the other of
And an insulating member provided between the surface of the substrate and the bottom surface of the light emitting element and provided between the two conductive adhesives.

本発明の一の態様によれば、導電性接着剤を利用した発光素子の実装方法で絶縁性と放熱性とを両立させることが可能となる。   According to one aspect of the present invention, it is possible to achieve both insulation and heat dissipation by a method for mounting a light emitting element using a conductive adhesive.

実施の形態1に係るLED光源の断面図。Sectional drawing of the LED light source which concerns on Embodiment 1. FIG. 実施の形態1に係る基板の斜視図。FIG. 3 is a perspective view of a substrate according to the first embodiment. 実施の形態2に係るLED光源の断面図。Sectional drawing of the LED light source which concerns on Embodiment 2. FIG. 実施の形態2に係る基板の斜視図。FIG. 5 is a perspective view of a substrate according to Embodiment 2. 実施の形態3に係る基板の斜視図。FIG. 6 is a perspective view of a substrate according to Embodiment 3. 実施の形態3に係るLED光源のLEDチップ実装時の荷重と変位との関係を示すグラフ。10 is a graph showing a relationship between a load and a displacement when an LED chip of the LED light source according to Embodiment 3 is mounted. 実施の形態4に係るLED光源の断面図。Sectional drawing of the LED light source which concerns on Embodiment 4. FIG. 実施の形態4に係る基板の斜視図。FIG. 6 is a perspective view of a substrate according to Embodiment 4.

以下、本発明の実施の形態について、図を用いて説明する。なお、各実施の形態の説明において、「上」、「下」、「左」、「右」、「前」、「後」といった方向は、説明の便宜上、そのように記しているだけであって、装置、器具、部品等の配置や向き等を限定するものではない。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the description of each embodiment, directions such as “up”, “down”, “left”, “right”, “front”, and “rear” are shown as such for convenience of explanation. The arrangement and orientation of the devices, instruments, parts, etc. are not limited.

実施の形態1.
図1は、本実施の形態に係るLED光源10の断面図である。図2は、LED光源10の基板16の斜視図である。
Embodiment 1 FIG.
FIG. 1 is a cross-sectional view of an LED light source 10 according to the present embodiment. FIG. 2 is a perspective view of the substrate 16 of the LED light source 10.

図1に示すように、LED光源10は、LEDチップ11、導電性接着剤13a,13b、絶縁構造14、基板16、レジスト層17を備えている。基板16の表面には、2つの配線15a,15bが設けられている。LEDチップ11の底面には、2つの電極12a,12b(アノード電極とカソード電極)が設けられている。LEDチップ11は、2つの導電性接着剤13a,13bを介して、当該底面側が基板16の表面側に実装される。   As shown in FIG. 1, the LED light source 10 includes an LED chip 11, conductive adhesives 13 a and 13 b, an insulating structure 14, a substrate 16, and a resist layer 17. Two wirings 15 a and 15 b are provided on the surface of the substrate 16. Two electrodes 12 a and 12 b (an anode electrode and a cathode electrode) are provided on the bottom surface of the LED chip 11. The LED chip 11 is mounted on the surface side of the substrate 16 on the bottom surface side via two conductive adhesives 13a and 13b.

レジスト層17は、LEDチップ11から放射される光のうち、基板16の表面側に当たる光を反射する。これにより、LED光源10の発光効率が上がる。   The resist layer 17 reflects light that hits the surface side of the substrate 16 among the light emitted from the LED chip 11. Thereby, the luminous efficiency of the LED light source 10 increases.

導電性接着剤13aは、電極12aと配線15aとを電気的に接続する。また、導電性接着剤13bは、電極12bと配線15bとを電気的に接続する。これら2つの導電性接着剤13a,13bは、いずれも金属粒子等の導電粒子を含んだ熱硬化性接着剤である。樹脂の材料としてはエポキシ樹脂、アクリル樹脂、シリコーン樹脂等が挙げられる。金属粒子としてはNi、Au、Sn、Al、Ag、Cu、Fe等の金属又はこれらの合金を粒子化したものが用いられる。なお、導電性粒子としては、樹脂を上記金属で覆った粒子を使用することも可能である。また、金属粒子と樹脂粒子等、複数種類の導電粒子を組み合わせて配合してもよい。   The conductive adhesive 13a electrically connects the electrode 12a and the wiring 15a. In addition, the conductive adhesive 13b electrically connects the electrode 12b and the wiring 15b. These two conductive adhesives 13a and 13b are both thermosetting adhesives containing conductive particles such as metal particles. Examples of the resin material include epoxy resin, acrylic resin, and silicone resin. As the metal particles, Ni, Au, Sn, Al, Ag, Cu, Fe or other metals or their alloys are used. In addition, it is also possible to use the particle | grains which covered resin with the said metal as electroconductive particle. Moreover, you may mix | blend combining multiple types of electrically-conductive particles, such as a metal particle and a resin particle.

絶縁構造14(絶縁部材)は、基板16の表面とLEDチップ11の底面との間に設けられ、かつ、2つの導電性接着剤13a,13bの間に設けられる。本実施の形態では、絶縁構造14が、基板16の表面において2つの配線15a,15bの間に立設され、絶縁構造14の先端(上端)がLEDチップ11の底面において2つの電極12a,12bの間に密着する。これにより、導電性接着剤13a,13bを分離させて、電極12a,12b間での短絡を防止することができる。   The insulating structure 14 (insulating member) is provided between the surface of the substrate 16 and the bottom surface of the LED chip 11, and is provided between the two conductive adhesives 13a and 13b. In the present embodiment, the insulating structure 14 is erected between the two wirings 15 a and 15 b on the surface of the substrate 16, and the tip (upper end) of the insulating structure 14 is two electrodes 12 a and 12 b on the bottom surface of the LED chip 11. It adheres between. Thereby, the conductive adhesives 13a and 13b can be separated to prevent a short circuit between the electrodes 12a and 12b.

なお、本実施の形態の変形例として、絶縁構造14が、LEDチップ11の底面において2つの電極12a,12bの間から突出し、先端(下端)が基板16の表面において2つの配線15a,15bの間に密着するようにしてもよい。この場合も、上記と同様に、導電性接着剤13a,13bを分離して、電極12a,12b間での短絡を防止することができる。   As a modification of the present embodiment, the insulating structure 14 protrudes from between the two electrodes 12 a and 12 b on the bottom surface of the LED chip 11, and the tip (lower end) of the two wirings 15 a and 15 b on the surface of the substrate 16. You may make it closely_contact | adhere between them. Also in this case, similarly to the above, the conductive adhesives 13a and 13b can be separated to prevent a short circuit between the electrodes 12a and 12b.

図2に示すように、絶縁構造14は、LEDチップ11の底面を横切るように設けられている。具体的には、絶縁構造14は、平面視略I字状(「一」字状)に形成されている。また、絶縁構造14は、その短手方向において、基板16上で配線15a,15bに挟まれるように形成されている。絶縁構造14は、ポリイミド樹脂、エポキシ樹脂、ウレタン樹脂、アクリル樹脂、シリコーン樹脂等で形成されている。絶縁構造14の厚さは100μm(マイクロメートル)以下であることが望ましい。絶縁構造14の幅は電極12a,12b間の距離に応じて20〜100μm程度とすることが望ましい。   As shown in FIG. 2, the insulating structure 14 is provided so as to cross the bottom surface of the LED chip 11. Specifically, the insulating structure 14 is formed in a substantially I shape (“one” shape) in plan view. The insulating structure 14 is formed so as to be sandwiched between the wirings 15a and 15b on the substrate 16 in the short direction. The insulating structure 14 is formed of polyimide resin, epoxy resin, urethane resin, acrylic resin, silicone resin, or the like. The thickness of the insulating structure 14 is desirably 100 μm (micrometers) or less. The width of the insulating structure 14 is desirably about 20 to 100 μm depending on the distance between the electrodes 12a and 12b.

本実施の形態において、絶縁構造14は、短手方向(正面視)において上面の幅が底面の幅より小さくなっている(例えば、断面視略台形状である)。そのため、絶縁構造14の安定性や剛性を損なうことなく、絶縁構造14の先端部分(LEDチップ11の底面に接触する部分)の幅を小さくすることができる。よって、電極12a,12b間の距離が短くて済み、電極12a,12bの面積を広くすることができる。電極12a,12bの面積が広ければ、その分LEDチップ11の発光層を大きくすることができるため、LEDチップ11の出力を増大させることが可能となる。   In the present embodiment, the insulating structure 14 has a width of the upper surface that is smaller than the width of the bottom surface in the short direction (front view) (for example, has a substantially trapezoidal shape in cross section). Therefore, the width of the tip portion of the insulating structure 14 (the portion that contacts the bottom surface of the LED chip 11) can be reduced without impairing the stability and rigidity of the insulating structure 14. Therefore, the distance between the electrodes 12a and 12b can be short, and the area of the electrodes 12a and 12b can be increased. If the area of the electrodes 12a and 12b is large, the light emitting layer of the LED chip 11 can be increased correspondingly, so that the output of the LED chip 11 can be increased.

LEDチップ11が基板16に実装される際には、まず、図2に示した基板16において絶縁構造14の左右両側の一定範囲に導電性接着剤13a,13bが塗布される。次に、LEDチップ11の底面において電極12a,12bの間に絶縁構造14の上端が接触し、電極12a,12bがそれぞれ導電性接着剤13a,13bと接触するように、LEDチップ11が基板16に配置される。そして、LEDチップ11が基板16の方向(下方)に一定の力で加圧されることで導電性接着剤13a,13bが適度に圧縮され、LEDチップ11と基板16との接着(物理的接続)、及び、電極12a,12bと配線15a,15bとの導通(電気的接続)がなされる。最後に、基板16上でLEDチップ11の周囲全体にレジスト層17が成形される。   When the LED chip 11 is mounted on the substrate 16, first, conductive adhesives 13 a and 13 b are applied to a predetermined range on both the left and right sides of the insulating structure 14 on the substrate 16 shown in FIG. 2. Next, the LED chip 11 is mounted on the substrate 16 so that the upper end of the insulating structure 14 is in contact between the electrodes 12a and 12b on the bottom surface of the LED chip 11 and the electrodes 12a and 12b are in contact with the conductive adhesives 13a and 13b, respectively. Placed in. When the LED chip 11 is pressed in the direction (downward) of the substrate 16 with a certain force, the conductive adhesives 13a and 13b are appropriately compressed, and the LED chip 11 and the substrate 16 are bonded (physical connection). ) And conduction (electrical connection) between the electrodes 12a and 12b and the wirings 15a and 15b. Finally, a resist layer 17 is formed on the entire periphery of the LED chip 11 on the substrate 16.

このようにLEDチップ11が基板16に実装されると、基板16に電源装置(図示していない)から入力されるLEDチップ11への電流を、配線15a,15bから導電性接着剤13a,13bを経てLEDチップ11の電極12a,12bに供給することができるようになる。   When the LED chip 11 is mounted on the substrate 16 in this manner, a current to the LED chip 11 input from the power supply device (not shown) to the substrate 16 is transmitted from the wirings 15a and 15b to the conductive adhesives 13a and 13b. After that, it can be supplied to the electrodes 12a and 12b of the LED chip 11.

LEDチップ11は発光時に発熱し、この熱は電極12a,12bから導電性接着剤13a,13b、配線15a,15bを通じて基板16へと放熱される。このとき、導電性接着剤13a,13bの導電粒子の混合量を増やすことで、電気抵抗と放熱時の熱抵抗が低減し、さらに電気的接続の信頼性が向上する。計算上は導電性接着剤13a,13bの導電粒子数が10倍に増えることで熱抵抗は1/10に低減できる。同時に、接続粒子(導電粒子)の数が増えるに従い、基板16上の回路が冗長性を持ち、信頼性が向上する。   The LED chip 11 generates heat during light emission, and this heat is radiated from the electrodes 12a and 12b to the substrate 16 through the conductive adhesives 13a and 13b and the wirings 15a and 15b. At this time, by increasing the mixing amount of the conductive particles of the conductive adhesives 13a and 13b, the electrical resistance and the thermal resistance during heat dissipation are reduced, and the reliability of electrical connection is further improved. In calculation, the thermal resistance can be reduced to 1/10 by increasing the number of conductive particles of the conductive adhesives 13a and 13b 10 times. At the same time, as the number of connecting particles (conductive particles) increases, the circuit on the substrate 16 has redundancy and the reliability is improved.

本実施の形態によれば、絶縁構造14が電極12a,12b間に入り込む形で配置されているため、導電粒子の粒子密度を上げても電極12a,12b間が短絡することはない。従来の実装方法では導電粒子による短絡が発生する確率が増大するため、電極間の距離を広げるか、導電粒子の密度を下げる必要があったが、本実施の形態の構造によれば短絡を発生させることなく導電粒子の密度を上げることができる。同時に電極12a,12b間の距離を狭くすることも可能になる。   According to the present embodiment, since the insulating structure 14 is arranged so as to enter between the electrodes 12a and 12b, the electrodes 12a and 12b are not short-circuited even if the particle density of the conductive particles is increased. In the conventional mounting method, since the probability of occurrence of a short circuit due to conductive particles increases, it is necessary to increase the distance between the electrodes or decrease the density of the conductive particles. However, according to the structure of the present embodiment, a short circuit occurs. Without increasing the density of the conductive particles, the density of the conductive particles can be increased. At the same time, the distance between the electrodes 12a and 12b can be reduced.

例えば、絶縁構造14は、光反射率を高めるために無機物により構成されるフィラーを含んでいてもよい。このように絶縁構造14に光反射率が高い材料を使用することで、電極12a,12b間及び電極12a,12b周辺に当たる光を反射させ、絶縁構造14がない場合に比べて光の利用効率を向上させることができる。   For example, the insulating structure 14 may include a filler made of an inorganic material in order to increase the light reflectance. In this way, by using a material having a high light reflectivity for the insulating structure 14, the light striking between the electrodes 12 a and 12 b and the periphery of the electrodes 12 a and 12 b is reflected, and the light utilization efficiency is improved as compared with the case without the insulating structure 14. Can be improved.

なお、LED光源10は、発光装置の一例であり、LEDチップ11以外の発光素子(例えば、有機EL(エレクトロルミネッセンス))を備えたものであってもよい。   The LED light source 10 is an example of a light emitting device, and may include a light emitting element other than the LED chip 11 (for example, organic EL (electroluminescence)).

また、LEDチップ11が基板16上に複数実装されてもよい。この場合、LEDチップ11ごとに絶縁構造14が設けられるものとする。   A plurality of LED chips 11 may be mounted on the substrate 16. In this case, an insulating structure 14 is provided for each LED chip 11.

以上説明したように、本実施の形態に係るLED光源10は、LEDチップ11と基板16と基板16に設けられた絶縁構造14と導電粒子を含む導電性接着剤13a,13bと基板16上の反射材(レジスト層17)から構成されている。このLED光源10において、絶縁材料で形成された突起が導電粒子を含む導電性接着剤13a,13bを分離させて絶縁を確保する厚さ約100μm以下の絶縁構造14を使用している。本実施の形態では、絶縁構造14がLEDチップ11の下面の電極12a,12b間に入り込み、導電性接着剤13a,13bを分離させるため、熱伝導率と電気伝導率が高い粒子の混合量を増加させた場合でも粒子による電極12a,12b間の短絡が発生せず、発光時のLEDチップ11からの熱を効率よく放熱することができ、さらに接続抵抗の低減と接続信頼性の向上が可能になる。同時にLED光源10の発光効率が上がる。   As described above, the LED light source 10 according to the present embodiment includes the LED chip 11, the substrate 16, the insulating structure 14 provided on the substrate 16, the conductive adhesives 13 a and 13 b including conductive particles, and the substrate 16. It is comprised from the reflecting material (resist layer 17). In the LED light source 10, an insulating structure 14 having a thickness of about 100 μm or less is used in which a protrusion formed of an insulating material separates the conductive adhesives 13a and 13b containing conductive particles to ensure insulation. In this embodiment, since the insulating structure 14 enters between the electrodes 12a and 12b on the lower surface of the LED chip 11 and separates the conductive adhesives 13a and 13b, the mixing amount of particles having high thermal conductivity and electrical conductivity is increased. Even if it is increased, short-circuit between the electrodes 12a and 12b due to particles does not occur, heat from the LED chip 11 during light emission can be efficiently radiated, and connection resistance can be reduced and connection reliability can be improved. become. At the same time, the luminous efficiency of the LED light source 10 is increased.

本実施の形態によれば、導電粒子を介在させるLEDチップ11の実装方法において、導電粒子の密度を増加させて電気抵抗を低減し、放熱性を上げた場合においても、LEDチップ11の下部の電極12a,12b間に導電粒子が高密度に充填されて電気的短絡が発生することを回避し、電極12a,12b間の絶縁を確保し、長期使用においてもイオンマイグレーションの発生や絶縁樹脂の劣化に起因する電気的短絡を抑制することができる。   According to the present embodiment, in the mounting method of the LED chip 11 with the conductive particles interposed, even when the density of the conductive particles is increased to reduce the electrical resistance and increase the heat dissipation, the lower part of the LED chip 11 is reduced. It avoids the occurrence of an electrical short circuit due to high density of conductive particles filled between the electrodes 12a and 12b, ensures insulation between the electrodes 12a and 12b, and causes ion migration and deterioration of insulating resin even in long-term use. The electrical short circuit resulting from this can be suppressed.

さらに、絶縁構造14に光反射率が高い材料を使用した場合、LEDチップ11の下部の電極12a,12b間の距離を小さくしながら、絶縁構造14が光を反射することが可能になるため、アノード又はカソード電極と層構造をなして発光層が形成される形のLEDチップ11においてはチップ面積内の発光面積の比率を大きく設計し、さらに電極12a,12b付近の光の反射量を増大させることが可能になる。   Furthermore, when a material having a high light reflectance is used for the insulating structure 14, the insulating structure 14 can reflect light while reducing the distance between the electrodes 12a and 12b below the LED chip 11, In the LED chip 11 in which the light emitting layer is formed in a layer structure with the anode or cathode electrode, the ratio of the light emitting area within the chip area is designed to be large, and the amount of reflected light near the electrodes 12a and 12b is further increased. It becomes possible.

実施の形態2.
本実施の形態について、主に実施の形態1との差異を説明する。
Embodiment 2. FIG.
In the present embodiment, differences from the first embodiment will be mainly described.

図3は、本実施の形態に係るLED光源10の断面図である。図4は、LED光源10の基板16の斜視図である。   FIG. 3 is a cross-sectional view of the LED light source 10 according to the present embodiment. FIG. 4 is a perspective view of the substrate 16 of the LED light source 10.

図3に示すように、LED光源10は、実施の形態1と同様に、LEDチップ11、導電性接着剤13a,13b、絶縁構造14、基板16、レジスト層17を備えている。   As shown in FIG. 3, the LED light source 10 includes an LED chip 11, conductive adhesives 13 a and 13 b, an insulating structure 14, a substrate 16, and a resist layer 17, as in the first embodiment.

本実施の形態では、図4に示すように、絶縁構造14が、LEDチップ11の底面の外周部の一部に沿って延設され、その延設された部分がLEDチップ11をLEDチップ11の底面側から支持している。即ち、絶縁構造14は、LEDチップ11の周囲を囲む部分にも配置されている。具体的には、絶縁構造14は、平面視略H字状(「エ」字状)に形成されている。このように、LEDチップ11の実装位置の周囲に絶縁構造14を延長することで導電性接着剤13a,13bの流動範囲を制御(制限)することが可能になる。つまり、導電性接着剤13a,13bがLEDチップ11の周囲に流れることを抑制できる。これにより、LEDチップ11からの光が導電性接着剤13a,13bによって妨げられることなく周囲に放射されるようになるため、LED光源10の発光効率が上がる。   In the present embodiment, as shown in FIG. 4, the insulating structure 14 extends along a part of the outer peripheral portion of the bottom surface of the LED chip 11, and the extended portion connects the LED chip 11 to the LED chip 11. It is supported from the bottom side. That is, the insulating structure 14 is also disposed at a portion surrounding the LED chip 11. Specifically, the insulating structure 14 is formed in a substantially H shape (“e” shape) in plan view. As described above, by extending the insulating structure 14 around the mounting position of the LED chip 11, it is possible to control (limit) the flow range of the conductive adhesives 13a and 13b. That is, the conductive adhesives 13 a and 13 b can be prevented from flowing around the LED chip 11. Thereby, the light from the LED chip 11 is emitted to the surroundings without being blocked by the conductive adhesives 13a and 13b, so that the light emission efficiency of the LED light source 10 is increased.

実施の形態1と同様に、例えば、絶縁構造14は、光反射率を高めるために無機物により構成されるフィラーを含んでいてもよい。LEDチップ11の側面からの発光はLEDチップ11全体の発光の数%から最大20〜30%に達する可能性があるため、LEDチップ11の周囲の反射率が上がればLED光源10の発光効率も大幅に上がる。   As in the first embodiment, for example, the insulating structure 14 may include a filler composed of an inorganic material in order to increase the light reflectance. Since the light emission from the side surface of the LED chip 11 may reach a maximum of 20 to 30% from a few percent of the light emission of the LED chip 11 as a whole, if the reflectance around the LED chip 11 increases, the light emission efficiency of the LED light source 10 also increases. Increases significantly.

以上説明したように、本実施の形態に係るLED光源10では、実施の形態1と同様に、底面にアノード電極とカソード電極を持つLEDチップ11を、導電粒子が絶縁性樹脂材料に混合されている導電性接着剤13a,13bにより基板16に実装する構造をとっている。この構造において、LEDチップ11の底面の電極12a,12bをできる限り大きくし、電極12a,12b間の距離を狭くした上で、予め基板16上に光反射率の高い絶縁構造14を設け、導電性接着剤13a,13bの流動範囲を限定しながらLED光源10の発光効率を向上させている。   As described above, in the LED light source 10 according to the present embodiment, as in the first embodiment, the LED chip 11 having the anode electrode and the cathode electrode on the bottom surface and the conductive particles are mixed with the insulating resin material. The structure is mounted on the substrate 16 by the conductive adhesives 13a and 13b. In this structure, the electrodes 12a and 12b on the bottom surface of the LED chip 11 are made as large as possible, the distance between the electrodes 12a and 12b is narrowed, and an insulating structure 14 having a high light reflectivity is provided on the substrate 16 in advance. The luminous efficiency of the LED light source 10 is improved while limiting the flow range of the adhesives 13a and 13b.

本実施の形態では、絶縁構造14がLEDチップ11の周囲に延長されており、導電性接着剤13a,13bの流動範囲を限定している。これにより、導電性接着剤13a,13bがLEDチップ11の周辺に流れることを抑制し、LEDチップ11から発せられる光を妨げることなく周囲に照射させることができる。よって、LED光源10の発光効率が上がる。   In the present embodiment, the insulating structure 14 is extended around the LED chip 11 to limit the flow range of the conductive adhesives 13a and 13b. Thereby, it is possible to suppress the conductive adhesives 13a and 13b from flowing around the LED chip 11, and to irradiate the surroundings without disturbing the light emitted from the LED chip 11. Therefore, the luminous efficiency of the LED light source 10 is increased.

実施の形態3.
本実施の形態について、主に実施の形態2との差異を説明する。
Embodiment 3 FIG.
The difference between the present embodiment and the second embodiment will be mainly described.

図5は、本実施の形態に係るLED光源10の基板16の斜視図である。   FIG. 5 is a perspective view of the substrate 16 of the LED light source 10 according to the present embodiment.

本実施の形態では、図5に示すように、絶縁構造14が、LEDチップ11の底面の外周部の全体に沿って延設され、その延設された部分がLEDチップ11をLEDチップ11の底面側から支持している。即ち、絶縁構造14は、LEDチップ11の下面の額縁部に配置され、LEDチップ11を搭載するときに絶縁構造14の高さ分の間隙を形成する。具体的には、絶縁構造14は、平面視略「日」字状に形成されている。このように、LEDチップ11の実装位置の周囲全体に絶縁構造14を延長することで導電性接着剤13a,13bの流動範囲を確実に制御(制限)することが可能になる。   In the present embodiment, as shown in FIG. 5, the insulating structure 14 extends along the entire outer peripheral portion of the bottom surface of the LED chip 11, and the extended portion connects the LED chip 11 to the LED chip 11. It is supported from the bottom side. That is, the insulating structure 14 is disposed in the frame portion on the lower surface of the LED chip 11, and forms a gap corresponding to the height of the insulating structure 14 when the LED chip 11 is mounted. Specifically, the insulating structure 14 is formed in a substantially “day” shape in plan view. As described above, the flow range of the conductive adhesives 13a and 13b can be reliably controlled (restricted) by extending the insulating structure 14 around the entire mounting position of the LED chip 11.

図6は、LED光源10のLEDチップ11の実装時の荷重と変位との関係を示すグラフである。   FIG. 6 is a graph showing the relationship between load and displacement when the LED chip 11 of the LED light source 10 is mounted.

荷重とは、LEDチップ11に加えられる圧力のことをいい、絶縁構造14がない場合に導電性接着剤13a,13bに含まれる導電粒子の圧縮率が最大となる圧力を100%とする。変位とは、LEDチップ11を破壊することなくLEDチップ11に加えられる圧力の限界値を100%としたときの限界値に対する圧力の比率をいう。本実施の形態では、変位が約94〜99%の状態が望ましいと仮定する。変位が94%を下回ると、導電性接着剤13a,13bに含まれる導電粒子の圧縮が不十分となり、LEDチップ11の電極12a,12bと基板16の配線15a,15bとの電気的接続が不安定になるおそれがある。一方、変位が99%を超えると、LEDチップ11の電極12a,12bや発光層が破壊されるおそれがある。   The load refers to the pressure applied to the LED chip 11, and when the insulating structure 14 is not present, the pressure at which the compressibility of the conductive particles contained in the conductive adhesives 13a and 13b is maximized is 100%. The displacement refers to the ratio of the pressure to the limit value when the limit value of the pressure applied to the LED chip 11 without destroying the LED chip 11 is 100%. In the present embodiment, it is assumed that a displacement of about 94 to 99% is desirable. When the displacement is less than 94%, the conductive particles contained in the conductive adhesives 13a and 13b are not sufficiently compressed, and the electrical connection between the electrodes 12a and 12b of the LED chip 11 and the wirings 15a and 15b of the substrate 16 is not good. May become stable. On the other hand, if the displacement exceeds 99%, the electrodes 12a and 12b and the light emitting layer of the LED chip 11 may be destroyed.

図6に示すように、絶縁構造14がLEDチップ11の下面に配置されない場合は「絶縁構造なし」の曲線のように導電粒子が圧縮される部分で急激に荷重が増大する。このため、LEDチップ11の搭載時の荷重調整範囲はグラフの領域Aになる。この領域より小さい荷重においては、導電粒子が十分に圧縮されないため、LEDチップ11への熱伝導と電気伝導が不安定になる。一方、グラフの100%が示す限界値近くに達した場合は、LEDチップ11の下面の電極12a,12bと発光層を破壊する。   As shown in FIG. 6, when the insulating structure 14 is not disposed on the lower surface of the LED chip 11, the load increases rapidly at the portion where the conductive particles are compressed as shown by the curve “without insulating structure”. For this reason, the load adjustment range when the LED chip 11 is mounted is the area A of the graph. At a load smaller than this region, the conductive particles are not sufficiently compressed, so that heat conduction and electric conduction to the LED chip 11 become unstable. On the other hand, when reaching the limit value indicated by 100% of the graph, the electrodes 12a and 12b and the light emitting layer on the lower surface of the LED chip 11 are destroyed.

一方、本実施の形態の接続構造では絶縁構造14が圧縮されることにより、グラフの「絶縁構造あり」の曲線のように変位に対する圧縮荷重の変化率は緩和され、LEDチップ11の搭載に適した荷重がグラフの領域Bのように広がる。このため、導電性接着剤13a,13bを適切に圧縮し、LEDチップ11を破壊せずに高い熱伝導率を達成し、信頼性の高い電気的接続を実現することが可能になる。つまり、本実施の形態では、絶縁構造14の一部がLEDチップ11の下面に入り込むことにより、LEDチップ11の荷重の調整幅が広がり、適切に荷重を調整することが容易になるため、LEDチップ11の電極12a,12b及び発光層の破壊や部分的な導電性接着剤13a,13bの不足を抑制することが可能になる。   On the other hand, in the connection structure of the present embodiment, the insulating structure 14 is compressed, so that the rate of change of the compressive load with respect to the displacement is reduced as shown by the curve “with insulating structure” in the graph, which is suitable for mounting the LED chip 11 The applied load spreads as shown in the area B of the graph. For this reason, it is possible to compress the conductive adhesives 13a and 13b appropriately, achieve high thermal conductivity without destroying the LED chip 11, and realize highly reliable electrical connection. That is, in this embodiment, since a part of the insulating structure 14 enters the lower surface of the LED chip 11, the adjustment range of the load of the LED chip 11 is widened and it is easy to appropriately adjust the load. It becomes possible to suppress the destruction of the electrodes 12a and 12b and the light emitting layer of the chip 11 and the shortage of the partial conductive adhesives 13a and 13b.

このように、本実施の形態では、絶縁構造14によってLEDチップ11の下面の電極12a,12b間を絶縁することができるとともにLEDチップ11と基板16の間隙を一定に調整することができ、導電性接着剤13a,13bのみで接着する場合に比べて信頼性の高い接着を実現することができる。   As described above, in this embodiment, the insulating structure 14 can insulate the electrodes 12a and 12b on the lower surface of the LED chip 11, and the gap between the LED chip 11 and the substrate 16 can be adjusted to be constant. Highly reliable adhesion can be realized as compared with the case of bonding only with the adhesives 13a and 13b.

以上説明したように、本実施の形態に係るLED光源10では、絶縁構造14がLEDチップ11の外周全体に延長され、実施の形態2と同様に導電性接着剤13a,13bの流動範囲を限定しながら、さらに周辺部がLEDチップ11の下に入り込むことでLEDチップ11の搭載時の加圧力の調整範囲を広げている。   As described above, in the LED light source 10 according to the present embodiment, the insulating structure 14 is extended to the entire outer periphery of the LED chip 11, and the flow range of the conductive adhesives 13a and 13b is limited as in the second embodiment. However, since the peripheral portion further enters under the LED chip 11, the adjustment range of the applied pressure when the LED chip 11 is mounted is expanded.

本実施の形態によれば、LEDチップ11の搭載時の加圧力調整範囲が増大することでLEDチップ11の損傷や導電性接着剤13a,13bの充填不足を回避した信頼性の高い接着が可能になる。   According to the present embodiment, the pressure adjustment range when the LED chip 11 is mounted is increased, so that highly reliable adhesion is possible by avoiding damage to the LED chip 11 and insufficient filling of the conductive adhesives 13a and 13b. become.

実施の形態4.
本実施の形態について、主に実施の形態3との差異を説明する。
Embodiment 4 FIG.
The difference between the present embodiment and the third embodiment will be mainly described.

図7は、本実施の形態に係るLED光源10の断面図である。図8は、LED光源10の基板16の斜視図である。   FIG. 7 is a cross-sectional view of the LED light source 10 according to the present embodiment. FIG. 8 is a perspective view of the substrate 16 of the LED light source 10.

図7に示すように、LED光源10は、LEDチップ11、導電性接着剤13a,13b、絶縁構造14、基板16を備えている。実施の形態1〜3のようなレジスト層17はなく、絶縁構造14がレジスト層17を兼ねている。   As shown in FIG. 7, the LED light source 10 includes an LED chip 11, conductive adhesives 13 a and 13 b, an insulating structure 14, and a substrate 16. There is no resist layer 17 as in the first to third embodiments, and the insulating structure 14 also serves as the resist layer 17.

本実施の形態では、図8に示すように、絶縁構造14が、LEDチップ11の底面の外周部より外側に延設されて基板16を覆い、基板16を覆う部分(実施の形態1〜3のレジスト層17に相当)が光を反射する。即ち、絶縁構造14は、LEDチップ11を実装する基板16の全面(LEDチップ11の電極12a,12bが配置される箇所を除く)に塗布される。一般的に、LED光源では、実施の形態1〜3のように、LEDからの光の使用率を向上させるため、実装基板がレジスト材料等で白色化される。本実施の形態では、これと同様に、絶縁構造14を白色化し、基板16の全面に延長することで、LED絶縁の効果と、光反射の効果を同時に得ることができる。また、絶縁構造14の形成と基板16の表面の白色化を同一プロセスで実現できるためコストの低減が可能になる。   In the present embodiment, as shown in FIG. 8, the insulating structure 14 extends outward from the outer peripheral portion of the bottom surface of the LED chip 11 to cover the substrate 16 and covers the substrate 16 (Embodiments 1 to 3). Corresponds to the resist layer 17). That is, the insulating structure 14 is applied to the entire surface of the substrate 16 on which the LED chip 11 is mounted (except for the place where the electrodes 12a and 12b of the LED chip 11 are disposed). Generally, in the LED light source, as in Embodiments 1 to 3, the mounting substrate is whitened with a resist material or the like in order to improve the usage rate of light from the LED. In the present embodiment, similarly to this, the insulating structure 14 is whitened and extended to the entire surface of the substrate 16, whereby the LED insulation effect and the light reflection effect can be obtained simultaneously. Further, since the formation of the insulating structure 14 and the whitening of the surface of the substrate 16 can be realized by the same process, the cost can be reduced.

以上説明したように、本実施の形態に係るLED光源10では、絶縁構造14を基板16の全体に拡大し、白色化しているため、絶縁構造14を形成するプロセスで同時に光反射層を形成することができ、コスト低減が可能になる。   As described above, in the LED light source 10 according to the present embodiment, since the insulating structure 14 is enlarged and whitened over the entire substrate 16, a light reflection layer is simultaneously formed in the process of forming the insulating structure 14. Cost reduction.

以上、本発明の実施の形態について説明したが、本発明は、これらの実施の形態に限定されるものではなく、必要に応じて種々の変更が可能である。   As mentioned above, although embodiment of this invention was described, this invention is not limited to these embodiment, A various change is possible as needed.

10 LED光源、11 LEDチップ、12a,12b 電極、13a,13b 導電性接着剤、14 絶縁構造、15a,15b 配線、16 基板、17 レジスト層。   10 LED light source, 11 LED chip, 12a, 12b electrode, 13a, 13b conductive adhesive, 14 insulating structure, 15a, 15b wiring, 16 substrate, 17 resist layer.

Claims (6)

2つの配線が設けられた表面を有する基板と、
2つの電極が設けられた底面を有する発光素子であり、前記2つの配線の一方と前記2つの電極の一方とを電気接続する導電性接着剤と、前記2つの配線の他方と前記2つの電極の他方とを電気接続する導電性接着剤との2つの導電性接着剤を介して、当該底面側が前記基板の表面側に実装される発光素子と、
前記基板の表面と前記発光素子の底面との間に設けられ、かつ、前記2つの導電性接着剤の間に設けられる絶縁部材と
を備えることを特徴とする発光装置。
A substrate having a surface provided with two wirings;
A light-emitting element having a bottom surface provided with two electrodes, a conductive adhesive electrically connecting one of the two wirings and one of the two electrodes, the other of the two wirings, and the two electrodes A light emitting element whose bottom surface is mounted on the surface side of the substrate via two conductive adhesives and a conductive adhesive that electrically connects the other of
A light emitting device comprising: an insulating member provided between a surface of the substrate and a bottom surface of the light emitting element and provided between the two conductive adhesives.
前記絶縁部材は、前記基板の表面において前記2つの配線の間に立設され、先端が前記発光素子の底面において前記2つの電極の間に密着することを特徴とする請求項1の発光装置。   2. The light emitting device according to claim 1, wherein the insulating member is erected between the two wirings on a surface of the substrate, and a tip thereof is in close contact between the two electrodes on a bottom surface of the light emitting element. 前記絶縁部材は、前記発光素子の底面を横切るように設けられたことを特徴とする請求項1又は2の発光装置。   The light-emitting device according to claim 1, wherein the insulating member is provided so as to cross a bottom surface of the light-emitting element. 前記絶縁部材は、前記発光素子の底面の外周部の少なくとも一部に沿って延設されたことを特徴とする請求項1から3のいずれかの発光装置。   The light-emitting device according to claim 1, wherein the insulating member extends along at least a part of an outer peripheral portion of a bottom surface of the light-emitting element. 前記絶縁部材は、前記発光素子の底面の外周部の少なくとも一部に沿って延設された部分が前記発光素子を前記発光素子の底面側から支持することを特徴とする請求項4の発光装置。   5. The light emitting device according to claim 4, wherein a portion of the insulating member that extends along at least a part of an outer peripheral portion of the bottom surface of the light emitting element supports the light emitting element from the bottom surface side of the light emitting element. . 前記絶縁部材は、前記発光素子の底面の外周部より外側に延設されて前記基板を覆い、前記基板を覆う部分が光を反射することを特徴とする請求項4又は5の発光装置。   6. The light emitting device according to claim 4, wherein the insulating member extends outward from an outer peripheral portion of a bottom surface of the light emitting element to cover the substrate, and a portion covering the substrate reflects light.
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160046539A (en) * 2014-10-21 2016-04-29 서울바이오시스 주식회사 Light emitting device and method of fabricating the same
KR20160059324A (en) * 2014-11-18 2016-05-26 서울반도체 주식회사 Light emitting device
CN107464873A (en) * 2017-05-03 2017-12-12 合肥彩虹蓝光科技有限公司 A kind of method for avoiding flip-chip die bond from leaking electricity
KR20190014854A (en) * 2017-08-04 2019-02-13 엘지이노텍 주식회사 Light emitting device package
KR20210039514A (en) * 2019-10-01 2021-04-12 주식회사 세미콘라이트 Substrate and semiconductor light emitting device using the same
KR20210069026A (en) * 2014-09-26 2021-06-10 서울바이오시스 주식회사 Light emitting device and method of fabricating the same
JP2022086470A (en) * 2020-11-30 2022-06-09 日亜化学工業株式会社 Planar light source

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057374A (en) * 2000-08-08 2002-02-22 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device
JP2005210043A (en) * 2003-12-24 2005-08-04 Kyocera Corp Package for housing light-emitting element, light-emitting apparatus and illumination apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057374A (en) * 2000-08-08 2002-02-22 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device
JP2005210043A (en) * 2003-12-24 2005-08-04 Kyocera Corp Package for housing light-emitting element, light-emitting apparatus and illumination apparatus

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102494723B1 (en) * 2014-09-26 2023-02-06 서울바이오시스 주식회사 Light emitting device and method of fabricating the same
KR20210069026A (en) * 2014-09-26 2021-06-10 서울바이오시스 주식회사 Light emitting device and method of fabricating the same
KR102279520B1 (en) * 2014-10-21 2021-07-21 서울바이오시스 주식회사 Light emitting device and method of fabricating the same
KR20160046539A (en) * 2014-10-21 2016-04-29 서울바이오시스 주식회사 Light emitting device and method of fabricating the same
KR20160059324A (en) * 2014-11-18 2016-05-26 서울반도체 주식회사 Light emitting device
KR102306802B1 (en) 2014-11-18 2021-09-30 서울반도체 주식회사 Light emitting device
CN107464873A (en) * 2017-05-03 2017-12-12 合肥彩虹蓝光科技有限公司 A kind of method for avoiding flip-chip die bond from leaking electricity
KR20190014854A (en) * 2017-08-04 2019-02-13 엘지이노텍 주식회사 Light emitting device package
KR102369821B1 (en) 2017-08-04 2022-03-03 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
KR102252598B1 (en) 2019-10-01 2021-05-18 주식회사 에스엘바이오닉스 Substrate and semiconductor light emitting device using the same
KR20210039514A (en) * 2019-10-01 2021-04-12 주식회사 세미콘라이트 Substrate and semiconductor light emitting device using the same
JP2022086470A (en) * 2020-11-30 2022-06-09 日亜化学工業株式会社 Planar light source
US11624499B2 (en) 2020-11-30 2023-04-11 Nichia Corporation Planar light source
JP7295438B2 (en) 2020-11-30 2023-06-21 日亜化学工業株式会社 planar light source

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