CN107464873A - A kind of method for avoiding flip-chip die bond from leaking electricity - Google Patents
A kind of method for avoiding flip-chip die bond from leaking electricity Download PDFInfo
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- CN107464873A CN107464873A CN201710304815.2A CN201710304815A CN107464873A CN 107464873 A CN107464873 A CN 107464873A CN 201710304815 A CN201710304815 A CN 201710304815A CN 107464873 A CN107464873 A CN 107464873A
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- glue
- conductive silver
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- terminal pad
- die bond
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000005611 electricity Effects 0.000 title claims abstract description 21
- 239000003292 glue Substances 0.000 claims abstract description 147
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052709 silver Inorganic materials 0.000 claims abstract description 84
- 239000004332 silver Substances 0.000 claims abstract description 84
- 238000002955 isolation Methods 0.000 claims abstract description 15
- 238000010422 painting Methods 0.000 claims abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 35
- 239000006071 cream Substances 0.000 claims description 34
- 230000001070 adhesive effect Effects 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 14
- 238000007711 solidification Methods 0.000 claims description 11
- 230000008023 solidification Effects 0.000 claims description 11
- 230000007812 deficiency Effects 0.000 abstract description 5
- 238000003466 welding Methods 0.000 description 13
- 238000001723 curing Methods 0.000 description 12
- 230000005496 eutectics Effects 0.000 description 7
- 229910001128 Sn alloy Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 235000010985 glycerol esters of wood rosin Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
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- 238000004132 cross linking Methods 0.000 description 1
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- 238000005538 encapsulation Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The present invention provides a kind of method for avoiding flip-chip die bond from leaking electricity, and this method comprises the following steps：S11, a LED support bowl is provided, LED support bowl includes a positive terminal pad and a negative terminal pad, isolation strip is provided between positive terminal pad and negative terminal pad；Point and/or painting ultraviolet glue on isolation belt surface；S12, put and/or apply respectively conductive silver glue in positive terminal pad and negative terminal pad surface；S13, by chip and conductive silver glue, the surface bonding of ultraviolet glue, be then compacted；S14, ultraviolet light is carried out to the structure that step S13 is obtained；S15, the step S14 structures obtained are toasted.The present invention sets ultraviolet glue between the conductive silver glue of both positive and negative polarity bond pad surface, separate the contact of two conductive silver glues, and then avoid because die bond causes the electric leakage even possibility of short circuit, the present invention uses ultraviolet glue bond chip, avoids the occurrence of bonding force deficiency and hole ratio the problem of uprising of chip.
Description
Technical field
The present invention relates to LED flip chip die bond technical field, avoids flip-chip die bond from leaking electricity more particularly to one kind
Method.
Background technology
Can be increasing with the power of LED product, thing followed heat dissipation problem can become more prominent.Wire bonding
Forward LED product radiated in the case of high current and can turn into most important problem, simultaneously because front electrode is upward, can hide
Fall a part of light, reduce luminous efficiency, and can more effectively be gone out than traditional encapsulation technology by flip-chip technology
Light, also can preferably it radiate.
LED industry chip face-down bonding mode mainly has the welding of upside-down mounting eutectic and upside-down mounting tin cream, conductive silver glue weldering at present
Connect.
The welding of upside-down mounting eutectic refers to that its crystal grain bottom is due to using pure tin in the case where LED chip is using eutectic welding
Or gold-tin alloy is when making contact surface coating so that crystal grain, which can be directly welded in, to be coated with the pad of gold or silver, so, when pad is added
When heat is to suitable eutectic temperature, gold or silver element penetrate into gold-tin alloy layer, change alloy composition of layer, and it is brilliant finally to improve it
Grain fusing point, while making the generation change of Eutectic Layer composition, by being welded on pad for LED chip fastening；And upside-down mounting tin cream, conduction
Elargol welding refers to tin cream or conductive silver glue that by after die bonding baking-curing welds a kind of welding manner of LED chip.
Respective advantage and disadvantage all be present in welding manner mentioned above.Separately below under simple elaboration：
Eutectic welds：Gold-tin alloy thermal conductivity is good, is accomplished that metal connects by eutectic welding procedure, its heat conduction
Performance much surmounts heat-conducting glue and the Joining Technology of heat conduction silver paste, avoids thermal compression welding because dead lamp is asked caused by gold thread
Topic, but because welding uses gold-tin alloy, so cost can be of a relatively high.
Tin cream, conductive silver glue welding：Flip-chip avoids the dead lamp problem of hot pressing bonding wire using tin cream welding, but tin
Cream is the mixture of a kind of uniform, stable tin alloy powder, scaling powder and solvent in itself, and dopant is more, fusing point than relatively low,
LED can melt tin cream when crossing Reflow Soldering, and chip can drift about on tin cream, avoid such case from using high-melting-point tin
Cream, such cost will increase, while be difficult to avoid that the voidage problem of welding；Conductive silver glue less expensive, well
Solve the problems, such as that hot pressing is welded lamp and tin cream cost is high, but electric leakage, short circuit and chip bottom voidage be present
Problem.
Using conductive silver glue face-down bonding mode die bond, usually put on the both positive and negative polarity pad of LED support bowl conductive
Elargol, as shown in figure 1, then by die bonding on pad, toasted after imposing certain pressure compaction, weldering is completed after solidification
Connect.The glue amount of conductive silver glue requires very high, and glue amount may excessively cause to leak electricity, or even short circuit, and glue amount is crossed and may caused at least
The bonding force deficiency of chip, hole ratio uprise.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide one kind to avoid flip-chip die bond from leaking
The method of electricity, this method set ultraviolet glue between the conductive silver glue of both positive and negative polarity bond pad surface, avoided because die bond causes to leak electricity
The even possibility of short circuit, while avoid the occurrence of bonding force deficiency and hole ratio the problem of uprising of chip.
In order to achieve the above objects and other related objects, the present invention provides a kind of side for avoiding flip-chip die bond from leaking electricity
Method, comprise the following steps：
1) a LED support bowl is provided, the LED support bowl includes a positive terminal pad and a negative terminal pad, it is described just
Isolation strip is provided between pole pad and the negative terminal pad；Point and/or painting ultraviolet glue on the isolation belt surface；
2) put and/or apply respectively conductive silver glue or tin cream in the positive terminal pad and the negative terminal pad surface；
3) by chip and the conductive silver glue, the surface bonding of the ultraviolet glue, then it is compacted；Or by chip and institute
Tin cream, the surface bonding of the ultraviolet glue are stated, is then compacted；
4) ultraviolet light is carried out to the structure that step 3) obtains, until the ultraviolet adhesive curing；
5) structure obtained to step 4), which carries out baking, solidifies the conductive silver glue or the tin cream.
In one embodiment of the present invention, in step 1), the ultraviolet glue is carried out a little and/or applied using point gum machine.
In one embodiment of the present invention, in step 1), the shape of the ultraviolet glue includes discontinuous point-like, ellipse
It is circular, square and round rectangle any one.
In one embodiment of the present invention, in step 2), the conductive silver glue is carried out a little and/or applied using point gum machine
Or the tin cream.
In one embodiment of the present invention, in step 2), the conductive silver glue is isotropism conductive silver glue, and it is solid
It is 130-150 DEG C to change temperature.
In one embodiment of the present invention, in step 2), the shape of the conductive silver glue include discontinuous point-like,
Any one in oval, square and round rectangle or combination；Or the shape of the tin cream includes discrete point
Any one in shape, ellipse, square and round rectangle or combination.
In one embodiment of the present invention, with perpendicular to the side of the positive terminal pad and the negative terminal pad line of centres
It is more than the length of the conductive silver glue or the tin cream to for length direction, the length of the ultraviolet glue.
In one embodiment of the present invention, in step 3), the wavelength of the ultraviolet light is 365nm, and light intensity value is
70-95mw/cm2, irradiation time 9-30s.
In one embodiment of the present invention, in step 5), when solidifying the conductive silver glue, the baking condition
For：Temperature is risen to 140-160 DEG C in 25-35min, 25-35min is kept, then rises to temperature in 25-35min
200-220 DEG C, keep 25-35min.
In one embodiment of the present invention, in step 5), when solidifying the conductive silver glue, the baking condition
For：Temperature is risen to 140-160 DEG C in 25-35min, keeps 55-65min.
As described above, the present invention provides a kind of method for avoiding flip-chip die bond from leaking electricity, have the advantages that：
The present invention sets ultraviolet glue between the conductive silver glue or tin cream of both positive and negative polarity bond pad surface, separates two conductive silver glues
Or tin cream contact, and then avoid because die bond causes the electric leakage even possibility of short circuit.The present invention uses ultraviolet glue bond chip, keeps away
Exempt to occur the bonding force deficiency of chip and the problem of hole ratio uprises, and then improve the quality and yield of product.
Brief description of the drawings
Fig. 1 is shown as the structural representation of conductive silver glue face-down bonding mode die bond of the prior art.
Fig. 2 is shown as a kind of schematic flow sheet of method for avoiding flip-chip die bond from leaking electricity of the present invention.
Fig. 3~Fig. 4 is shown as the structure that the step S11 of the method for avoiding the electric leakage of flip-chip die bond of the present invention is presented
Schematic diagram.
Fig. 5~Fig. 8 is shown as the structure that the step S12 of the method for avoiding the electric leakage of flip-chip die bond of the present invention is presented
Schematic diagram.
Fig. 9 is shown as the schematic flow sheet that another kind of the invention avoids the method for flip-chip die bond electric leakage.
Component label instructions
1 positive terminal pad
2 isolation strip
3 negative terminal pads
4 first conductive silver glues
5 second conductive silver glues
6 ultraviolet glues
S11-S25 steps
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 2 to Fig. 9 is referred to, it is necessary to illustrate, the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, the component relevant with the present invention is only shown in schema then rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
On the one hand, the present invention provides a kind of method for avoiding flip-chip die bond from leaking electricity, as shown in Fig. 2 including following step
Suddenly：
S11, a LED support bowl is provided, LED support bowl includes a positive terminal pad and a negative terminal pad, positive terminal pad
Isolation strip is provided between negative terminal pad；Point and/or painting ultraviolet glue on isolation belt surface；
S12, put and/or apply respectively conductive silver glue in positive terminal pad and negative terminal pad surface；
S13, by chip and conductive silver glue, the surface bonding of ultraviolet glue, be then compacted；
S14, ultraviolet light is carried out to the structure that step S13 is obtained, until ultraviolet adhesive curing；
S15, baking is carried out to the step S14 structures obtained so that conductive silver glue solidification.
As shown in Figure 3, Figure 4, be first carried out step S1, choose the both positive and negative polarity pad of LED support bowl, positive terminal pad 1,
Isolation strip 2 is provided between negative terminal pad 3, positive terminal pad 1, negative terminal pad 3 and the surface of isolation strip 2 are first cleared up, then using point
Ultraviolet glue 6 is put and/or applied to glue machine on the surface of isolation strip 2.
Ultraviolet glue is also known as light-sensitive emulsion, is that one kind must irradiate then curable a kind of adhesive by ultraviolet, by resin
Monomer or performed polymer form plus sensitising agent.Under ultraviolet irradiation sensitising agent can absorb ultraviolet produce living radical or
Cation, trigger monomer polymerization, cross-linking chemistry reaction, adhesive is converted into solid-state by liquid within several seconds or tens of seconds,
Realize bonding.There is fabulous adhesive strength to various common plastics, glass, metal etc., be commonly applied to the self-adhesion of plastics, plastics
With mutually viscous, the suitable small areas effect of glass, metal.
Ultraviolet glue 6 is SGA, urethane acrylate glue or epoxy acrylic ester gum.As an example, ultraviolet glue 6
Model KD-6281.
The refractive index that ultraviolet glue 6 solidifies post-consumer polymer is 1.40-1.59, and ultraviolet glue is low-index material.
The thickness 1-3mil (1mil=25.4 μm) of ultraviolet glue 6.With perpendicular to positive terminal pad 1 and the center of negative terminal pad 3 company
The direction of line is length direction, and the length of ultraviolet glue is adjusted according to actual conditions so that the length of ultraviolet glue 6 is not less than chip
Length.
Ultraviolet glue 6 on the surface of isolation strip 2 is discontinuous point-like, ellipse, square or round rectangle.Preferably,
Ultraviolet glue 6 is ellipse or round rectangle.As an example, ultraviolet glue 6 is ellipse, as shown in Figure 4.In other embodiments
In, the shape of ultraviolet glue 6 can be selected according to the actual requirements, be not limited to this.
As shown in Fig. 5 to Fig. 8, perform step S2, using point gum machine on positive terminal pad, negative terminal pad surface point respectively
And/or conductive silver glue is applied, form the first conductive silver glue 4, the second conductive silver glue 5.The operation of conductive silver glue and ultraviolet glue can be
Carry out, can also be fulfiled assignment in more point gum machine combinations on one point gum machine, but the sequence of operation must be first operation ultraviolet glue,
Then industry conductive silver glue is remake.
The main component of conductive silver glue is matrix resin, silver powder and accelerator etc., and conducting resinl is used as after matrix resin solidification
Molecular skeleton, play a part of bonding, matrix resin determines the mechanical property and adhesive property of conductive silver glue；Silver powder is in base
Conductive network is formed in body resin so as to conductive；Accelerator plays raising solidification rate, reduces the effect of solidification temperature.
Conductive silver glue is solidified using thermalization mode, and the viscosity of conductive silver glue is 10000-13000cps.Conductive silver glue
For isotropism conductive silver glue, its solidification temperature is 130-150 DEG C.Conductive silver glue needs high adhesion strength, and electric conductivity will
Good, resistance is low (generation for reducing heat), while the heat resistance that should have also had and ageing-resistant, anti-decay property.As showing
Example, the model Sumitomo Chemical GRADE CRM-HL-GJ002 of conductive silver glue.
First conductive silver glue 4, the thickness of the second conductive silver glue 5 are respectively 1-3mil (1mil=25.4 μm), conductive silver glue
Glue amount should not be excessive, although have ultraviolet glue 6 to keep apart among both, it must also be noted that the control of glue amount, avoids electric leakage, short circuit
Situation occurs.
First conductive silver glue 4, the shape of the second conductive silver glue 5 are respectively discontinuous point-like, ellipse, square or fillet
Rectangle, the first conductive silver glue 4 can be with identical with the shape of both the second conductive silver glues 5, can also be different.In the present embodiment,
The shape of first conductive silver glue 4 and both the second conductive silver glues 5 is identical, as shown in Fig. 5 to Fig. 8.In other embodiments,
The shape and combination of first conductive silver glue 4 and the second conductive silver glue 5 can be selected according to the actual requirements, and unlimited
Due to this.
Using perpendicular to the direction of positive terminal pad 1 and the line of centres of negative terminal pad 3 as length direction, then the length of ultraviolet glue 6
It is this to be designed to keep away well more than the length for being arranged at the first conductive silver glue 4 of the both sides of ultraviolet glue 6, the second conductive silver glue 5
Exempt from the contact of the first conductive silver glue 4, the second conductive silver glue 5 in spreading process.
Then step S3 is performed, the surface of chip and the first conductive silver glue 4, the second conductive silver glue 5 and ultraviolet glue 6 is glued
Close, be then compacted.Bonding positioning must be accurate, because the fixed line time is fast, is stained with easily, then remove and be difficult；After chip compacting
Conductive silver glue can be spread apart naturally；Can be by the unnecessary conductive silver glue wiped clean of chip circumference.
Then step S4 is performed, ultraviolet light is carried out to the structure that step S3 is obtained, until ultraviolet glue 6 solidifies.It is ultraviolet
The wavelength of light is 365nm, light intensity value 70-95mw/cm2, irradiation time 9-30s.As an example, the wavelength of ultraviolet light is
365nm, light intensity value 80mw/cm2, irradiation time 15s.
Step S5 is finally performed, baking is carried out to the step S4 structures obtained and make it that the first conductive silver glue 4 and second is conductive
Glue 5 solidifies.Conductive silver glue is different from the curing mode of ultraviolet glue, and the curing mode of conductive silver glue is to be heating and curing.Baking condition
For：Temperature is risen to 140-160 DEG C in 25-35min, 25-35min is kept, then rises to temperature in 25-35min
200-220 DEG C, keep 25-35min.As an example, baking condition is：Temperature is risen to 150 DEG C in 30min, kept
30min, temperature is then risen to 210 DEG C in 30min, keep 30min.
In another embodiment, positive terminal pad and negative terminal pad are toasted, baking condition is：In 25-35min
Temperature is risen to 140-160 DEG C, keeps 55-65min.As an example, baking condition is：Temperature is risen to 150 in 30min
DEG C, keep 60min.
The present invention is provided with the purple different from conductive silver glue curing mode between the conductive silver glue of both positive and negative polarity bond pad surface
Outer glue, main cause include：First, if adhesive curing mode is identical, two kinds of adhesives toast together, and exception easily occurs, than
It can not such as solidify (adhesive poisoning), that is, different adhesives the reason for need to separating oven cooking cycle in production.Second, this method
Need after the middle adhesive solidification for playing buffer action, the operation of both sides conductive silver glue, in general, heat cure could be carried out
Adhesive curing efficiency be less than ultraviolet glue curing efficiency；And in the present invention ultraviolet glue can with conductive silver glue together operation,
Then solidification is realized in several seconds or tens of seconds, the solidification of conductive silver glue is realized in then baking, so as to greatly improve production efficiency.
On the other hand, the present invention is applied to the situation that flip-chip uses tin cream to weld.As shown in figure 9, one kind avoids
The method of flip-chip die bond electric leakage, comprises the following steps：
S21, a LED support bowl is provided, LED support bowl includes a positive terminal pad and a negative terminal pad, positive terminal pad
Isolation strip is provided between negative terminal pad；Point and/or painting ultraviolet glue on isolation belt surface；
S22, put and/or apply respectively tin cream in positive terminal pad and negative terminal pad surface；
S23, by chip and tin cream, the surface bonding of ultraviolet glue, be then compacted；
S24, ultraviolet light is carried out to the structure that step S23 is obtained, until ultraviolet adhesive curing；
S25, the step S24 structures obtained is carried out by baking solidify tin cream.
Ultraviolet glue is SGA, urethane acrylate glue or epoxy acrylic ester gum.As an example, ultraviolet glue
Model KD-6281.
The refractive index of ultraviolet adhesive curing post-consumer polymer is 1.40-1.59, and ultraviolet glue is low-index material.
The thickness 1-3mil (1mil=25.4 μm) of ultraviolet glue.With perpendicular to positive terminal pad 1 and the line of centres of negative terminal pad 3
Direction be length direction, the length of ultraviolet glue is adjusted according to actual conditions so that the length of ultraviolet glue 6 not less than chip and
The length of tin cream.
Tin cream is the mixture of a kind of uniform, stable tin alloy powder, scaling powder and solvent, and dopant is more, fusing point ratio
Relatively low, the present invention avoids chip from being drifted about on tin cream, without using high-melting-point tin cream, lowers production cost, while avoid welding
The voidage problem connect.
In summary, it is of the invention that ultraviolet glue is set between the conductive silver glue or tin cream of both positive and negative polarity bond pad surface, cut-off
Two conductive silver glues or tin cream contact, and then avoid because die bond causes the electric leakage even possibility of short circuit.The present invention is using ultraviolet
Glue bond chip, avoids the occurrence of bonding force deficiency and hole ratio the problem of uprising of chip, so improve product quality and
Yield.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
- A kind of 1. method for avoiding flip-chip die bond from leaking electricity, it is characterised in that comprise the following steps：1) a LED support bowl is provided, the LED support bowl includes a positive terminal pad and a negative terminal pad, the positive pole weldering Isolation strip is provided between disk and the negative terminal pad；Point and/or painting ultraviolet glue on the isolation belt surface；2) put and/or apply respectively conductive silver glue or tin cream in the positive terminal pad and the negative terminal pad surface；3) by chip and the conductive silver glue, the surface bonding of the ultraviolet glue, then it is compacted；Or by chip and the tin The surface bonding of cream, the ultraviolet glue, is then compacted；4) ultraviolet light is carried out to the structure that step 3) obtains, until the ultraviolet adhesive curing；5) structure obtained to step 4), which carries out baking, solidifies the conductive silver glue or the tin cream.
- 2. the method according to claim 1 for avoiding flip-chip die bond from leaking electricity, it is characterised in that in step 1), adopt The ultraviolet glue is carried out a little and/or applied with point gum machine.
- 3. the method according to claim 1 or 2 for avoiding flip-chip die bond from leaking electricity, it is characterised in that in step 1), The shape of the ultraviolet glue include discontinuous point-like, ellipse, it is square and round rectangle any one.
- 4. the method according to claim 1 for avoiding flip-chip die bond from leaking electricity, it is characterised in that in step 2), adopt The conductive silver glue or the tin cream are carried out a little and/or applied with point gum machine.
- 5. the method according to claim 1 for avoiding flip-chip die bond from leaking electricity, it is characterised in that in step 2), institute It is isotropism conductive silver glue to state conductive silver glue, and its solidification temperature is 130-150 DEG C.
- 6. avoid the method that flip-chip die bond is leaked electricity according to claim 1 or 4, it is characterised in that in step 2), The shape of the conductive silver glue includes any one or combination in discontinuous point-like, ellipse, square and round rectangle； Or the shape of the tin cream includes any one in discontinuous point-like, ellipse, square and round rectangle or group Close.
- 7. it is according to claim 1 avoid flip-chip die bond leak electricity method, it is characterised in that with perpendicular to it is described just The direction of pole pad and the negative terminal pad line of centres is length direction, and the length of the ultraviolet glue is more than the conductive silver glue Or the length of the tin cream.
- 8. the method according to claim 1 for avoiding flip-chip die bond from leaking electricity, it is characterised in that in step 3), institute The wavelength for stating ultraviolet light is 365nm, light intensity value 70-95mw/cm2, irradiation time 9-30s.
- 9. the method according to claim 1 for avoiding flip-chip die bond from leaking electricity, it is characterised in that in step 5), when When making the conductive silver glue solidification, the baking condition is：Temperature is risen to 140-160 DEG C in 25-35min, keeps 25- 35min, temperature is then risen to 200-220 DEG C in 25-35min, keep 25-35min.
- 10. avoid the method that flip-chip die bond is leaked electricity as described in claim 1 to 7 is any, it is characterised in that in step 5) In, when solidifying the conductive silver glue, the baking condition is：Temperature is risen to 140-160 DEG C in 25-35min, kept 55-65min。
Priority Applications (1)
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|---|---|---|---|
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| CN111029454A (en) * | 2019-12-12 | 2020-04-17 | 罗海源 | Flip lamp bead die bonding and eutectic all-in-one machine and flip lamp bead packaging process |
| CN111129272A (en) * | 2018-10-31 | 2020-05-08 | 台湾爱司帝科技股份有限公司 | Method and device for fixedly connecting light-emitting diode chip |
| CN111916433A (en) * | 2019-05-10 | 2020-11-10 | 深圳市洲明科技股份有限公司 | LED display screen and preparation method thereof |
| CN112599426A (en) * | 2021-03-05 | 2021-04-02 | 成都先进功率半导体股份有限公司 | Chip glue brushing method |
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