JP2012244174A - ボンディングパッドおよびシールド構造を有する半導体装置およびその製造方法 - Google Patents
ボンディングパッドおよびシールド構造を有する半導体装置およびその製造方法 Download PDFInfo
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- JP2012244174A JP2012244174A JP2012112455A JP2012112455A JP2012244174A JP 2012244174 A JP2012244174 A JP 2012244174A JP 2012112455 A JP2012112455 A JP 2012112455A JP 2012112455 A JP2012112455 A JP 2012112455A JP 2012244174 A JP2012244174 A JP 2012244174A
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Abstract
【解決手段】半導体装置は、半導体装置の正面と背面に対応する正面と背面を有する装置基板と、装置基板の正面上に形成される金属層部と、半導体装置の背面に設置され、金属層部と電気的に接続するボンディングパッドと、装置基板の背面上に設置されるシールド構造と、を含み、シールド構造とボンディングパッドは異なる厚さを有する。
【選択図】図8
Description
300、900 裏面照射型(BSI)イメージセンサー装置
310 装置基板
312 装置基板の正面
314 装置基板の背面
316 ボンディング領域
317 遮蔽領域
318 放射感知領域
320 センサー
322、332 層間絶縁膜(ILD)
334 配線間絶縁(IMD)層
342 金属層部
350、384 パッシベーション層
360 キャリア基板
362 薄化後の装置基板の厚さ
363 反射防止膜(ARC)層
364、382 バッファ層
370、970 トレンチ
374 ボンディングパッド
376 シールド構造
995 金属層
Claims (10)
- 半導体装置であって、
半導体装置の正面と背面に対応する正面と背面を有する装置基板と、
前記装置基板の正面上に形成される金属層部と、
前記半導体装置の背面上に設置され、前記金属層部と電気的に接続するボンディングパッド、および、
前記装置基板の背面上に設置されるシールド構造と、を含み、
前記シールド構造および前記ボンディングパッドは異なる厚さを有することを特徴とする半導体装置。 - さらに、
前記装置基板に設置され、前記装置基板の背面から入射する放射を感知する放射感知領域と、
前記半導体装置の前記正面上に設置される第一パッシベーション層と、
前記第一パッシベーション層に接合されるキャリア基板と、
前記装置基板の背面上に設置される第一バッファ層と、
前記装置基板の背面上に設置される第二パッシベーション層と、
前記装置基板の背面上に設置される第二バッファ層と、を含み、
前記第二バッファ層は、前記第一バッファ層と前記第二パッシベーション層間に介在することを特徴とする請求項1に記載の半導体装置。 - 前記ボンディングパッドは、前記シールド構造より厚いことを特徴とする請求項1に記載の半導体装置。
- 前記ボンディングパッドおよび前記シールド構造は、アルミニウム、銅、アルミニウム-銅、チタニウム、タンタル、窒化チタン、窒化タンタルおよびタングステンから構成される群から選択される材料を含むことを特徴とする請求項1に記載の半導体装置。
- 前記シールド構造および前記ボンディングパッドは異なる材料から構成されることを特徴とする請求項1に記載の半導体装置。
- 半導体装置の製造方法であって、
半導体装置の正面と背面に対応する正面と背面を有する装置基板を用意する工程と、
前記装置基板の正面に金属層部を形成する工程と、
前記半導体装置の背面に、前記金属層部を露出するトレンチを形成する工程と、
前記トレンチ中に、前記金属層部と電気的に接続するボンディングパッドを形成する工程と、
前記装置基板の背面に金属シールドを形成する工程と、を含み、前記金属シールドの厚さは前記ボンディングパッドの金属層の厚さより小さいことを特徴とする半導体装置の製造方法。 - 前記金属シールドの形成前、前記ボンディングパッドが形成されることを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記金属シールドの形成後、前記ボンディングパッドが形成されることを特徴とする請求項6に記載の半導体装置の製造方法。
- さらに、
前記装置基板の正面に第一パッシベーション層を形成する工程と、
前記装置基板の背面に、バッファ層を形成し、前記金属シールドを前記バッファ層上に形成する工程と、
前記バッファ層の形成前に、キャリア基板を前記装置基板の正面に接合する工程と、
前記装置基板の背面に第二パッシベーション層を形成し、前記第二パッシベーション層が前記ボンディングパッドおよび前記金属シールドを被覆する工程と、
前記第二パッシベーション層をエッチングして、前記ボンディングパッドを露出する工程と、
を含むことを特徴とする請求項6に記載の半導体装置の製造方法。 - さらに、
前記装置基板の正面に、前記半導体装置の背面に入射する放射を感知するセンサーを形成する工程と、
カラーフィルターを前記センサー上に形成する工程、および、
前記カラーフィルターおよびセンサー上にマイクロレンズを形成する工程と、
を含むことを特徴とする請求項6に記載の半導体装置の製造方法。
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