JP2012244159A - パッケージ構造およびその製造方法 - Google Patents
パッケージ構造およびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910000679 solder Inorganic materials 0.000 claims abstract description 18
- 239000000565 sealant Substances 0.000 claims abstract description 9
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 273
- 229920002120 photoresistant polymer Polymers 0.000 claims description 38
- 239000002335 surface treatment layer Substances 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 abstract 9
- 238000009413 insulation Methods 0.000 abstract 4
- 239000011162 core material Substances 0.000 description 8
- 239000000654 additive Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
【解決手段】パターン化絶縁層130が第1シード層上に形成され、第1シード層の一部を露出する。パターン化回路層140が第1シード層の露出された部分上に形成され、パターン化絶縁層130の一部を覆う。チップボンディングプロセスが、チップをパターン化回路層140に電気接続するように実行される。チップとパターン化回路層140を封止し、パターン化絶縁層130を覆う封止剤170が形成される。金属基板と第1シード層がパターン化絶縁層130の底面132とパターン化回路層140の下表面142を露出するように除去される。はんだボール180がパターン化回路層140の下表面142上に形成される。
【選択図】図1E
Description
図1A〜図1Eは、この発明の実施形態にかかるパッケージキャリアを製造する方法を示す断面図である。図1Aにおいて、本発明の実施形態にかかるパッケージ構造を製造する方法において、金属基板110が提供される。詳しくは、この実施の形態の金属基板110は、第1表面112と、第1表面112に対向する第2表面114を有し、第1シード層120が既に第1表面112上に形成されている。この実施の形態において、第1シード層120の材料は、例えば、銅であり、第1シード層120は、例えば電気メッキ法により形成される。
110 金属基板
112 第1表面
114 第2表面
120 第1シード層
125 第2シード層
130 パターン化絶縁層
132 底面
140 パターン化回路層
140a 金属層
142 下表面
150 表面処理層
160 チップ
170 封止剤
180 はんだボール
192,194 パターン化フォトレジスト層
196 ボンディングワイヤ
Claims (10)
- 第1表面を有し、かつ前記第1表面上に第1シード層が形成されている金属基板を提供するステップと、
前記第1シード層の一部を露出するパターン化絶縁層を前記第1シード層上に形成するステップと、
前記パターン化絶縁層により露出された前記第1シード層の一部上に、前記パターン化絶縁層の一部を覆うパターン化回路層を形成するステップと、
チップを前記パターン化回路層に電気接続するようにチップボンディングプロセスを実行するステップと、
前記チップと前記パターン化回路層を封止し、前記パターン化絶縁層の一部を覆う封止剤を形成するステップと、
前記パターン化絶縁層の底面と前記パターン化回路層の下表面を露出するように前記金属基板と前記第1シード層を除去するステップと、
はんだボールを前記パターン化回路層の前記下表面上に形成するステップと
を備えるパッケージ構造の製法方法。 - 前記パターン化回路層を形成するステップが、さらに、
前記パターン化絶縁層上に、前記パターン化絶縁層を封止する第2シード層を形成するステップと、
前記第2シード層の一部及び前記金属基板の前記第1表面に対向する第2表面上に、前記第1シード層の一部及び前記第2シード層の一部を露出するパターン化フォトレジスト層を形成するステップと、
前記パターン化回路層が、前記パターン化フォトレジスト層を電気メッキマスクとして使用して、前記パターン化フォトレジスト層により露出された前記第1シード層の一部と前記第2シード層の一部上に電気メッキされるステップと、
前記パターン化絶縁層の一部と前記金属基板の前記第2表面を露出するように、前記パターン化フォトレジスト層と、前記第2シード層のうち前記パターン化フォトレジスト層下に位置する一部分を除去するステップと
を含む請求項1記載のパッケージ構造を製造する方法。 - さらに、前記パターン化フォトレジスト層と前記第2シード層の前記一部を除去する前に前記パターン化回路層に表面処理層を形成するステップを含む請求項2記載のパッケージ構造を製造する方法。
- 前記パターン化回路層を形成するステップが、
前記第1シード層上に、前記パターン化絶縁層と前記第1シード層の一部とを覆う金属層を形成するステップと、
前記金属層上に、前記金属層の一部を露出するパターン化フォトレジスト層を形成するステップと、
前記パターン化フォトレジスト層をエッチングマスクとして使用して、前記金属層の前記一部を除去し、それにより前記パターン化絶縁層の一部を露出して、前記パターン化回路層を形成するステップと、
前記パターン化フォトレジスト層を除去するステップと
を含む請求項1記載のパッケージ構造を製造する方法。 - さらに、前記パターン化フォトレジスト層を除去した後、前記パターン化回路層上に表面処理層を形成するステップを含む請求項4記載のパッケージ構造を製造する方法。
- 前記チップボンディングプロセスが、ワイヤボンディングプロセス又はフリップチップボンディングプロセスを含む請求項1記載のパッケージ構造を製造する方法。
- 請求項1に記載の製造方法により形成されるパッケージ構造であって、
前記底面を有する前記パターン化絶縁層と、
前記パターン化絶縁層上に配置され、当該パターン化絶縁層の一部を覆い、前記下表面が前記パターン化絶縁層の前記底面と位置合わせされる前記パターン化回路層と、
前記パターン化回路層の前記下表面上に配置される前記はんだボールと、
前記パターン化回路層に電気接続される前記チップと、
前記チップと前記パターン化回路層を封止し、前記パターン化絶縁層の前記一部を覆う前記封止剤と
を備えるパッケージ構造。 - 更に、
前記パターン化回路層上に位置する表面処理層を含む請求項7に記載のパッケージ構造。 - 前記表面処理層が、ニッケル層、金層、銀層或いはニッケル-パラジウム-金層を含む請求項8に記載のパッケージ構造。
- 前記チップが、ワイヤボンディングプロセス又はフリップチップボンディングプロセスにより、前記パターン化回路層に電気接続される請求項7に記載のパッケージ構造。
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JP2002289739A (ja) * | 2001-03-23 | 2002-10-04 | Dainippon Printing Co Ltd | 樹脂封止型半導体装置および半導体装置用回路部材とその製造方法 |
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CN102790033A (zh) | 2012-11-21 |
US8384216B2 (en) | 2013-02-26 |
TW201248745A (en) | 2012-12-01 |
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