JP2012242253A - Isfetセンサ - Google Patents
Isfetセンサ Download PDFInfo
- Publication number
- JP2012242253A JP2012242253A JP2011113072A JP2011113072A JP2012242253A JP 2012242253 A JP2012242253 A JP 2012242253A JP 2011113072 A JP2011113072 A JP 2011113072A JP 2011113072 A JP2011113072 A JP 2011113072A JP 2012242253 A JP2012242253 A JP 2012242253A
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- JP
- Japan
- Prior art keywords
- layer
- fet
- circuit
- impedance
- esd protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims description 95
- 239000011241 protective layer Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 abstract description 17
- 230000003068 static effect Effects 0.000 abstract description 17
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 42
- 239000010408 film Substances 0.000 description 14
- 238000005259 measurement Methods 0.000 description 14
- 239000000523 sample Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000012085 test solution Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】FET22と、FET22のゲート部Gを覆うイオン感応層24と、ゲート部G以外の部分を被覆するESD保護層25と、ESD保護層25に接続されてESD保護素子5を有する外部保護回路4とを備え、FET22により構成される回路8、9のインピーダンスを、外部保護回路4のインピーダンスよりも大きくしている。
【選択図】図2
Description
2 ・・・ISFETチップ
21 ・・・基板
G ・・・ゲート
D ・・・ドレイン
S ・・・ソース
22 ・・・FET
23 ・・・中間層(バッファ層)
231 ・・・凹部
24 ・・・イオン感応層
25 ・・・ESD保護層
3 ・・・比較電極
4 ・・・外部保護回路
5 ・・・ESD保護素子(コンデンサ)
6 ・・・制御基板
C ・・・コモン
8 ・・・ドレイン回路部
9 ・・・ソース回路部
R1、R2・・・抵抗
Claims (4)
- 基板に形成されたFETと、
少なくとも前記FETのゲート部を覆うように前記基板上に形成されたイオン感応層と、
前記ゲート部以外の部分を覆うように前記基板上又は前記イオン感応層上に形成された導電性材料からなるESD保護層と、
前記ESD保護層の外部に設けられた外部保護回路とを備え、
前記外部保護回路が、前記ESD保護層及び前記外部保護回路のコモンをESD保護素子を介して電気的に接続するとともに、
前記FETにより構成される回路のインピーダンスを、前記外部保護回路のインピーダンスよりも大きくしていることを特徴とするISFETセンサ。 - 前記FETのドレインが接続されるドレイン回路部及び前記FETのソースが接続されるソース回路部に抵抗を設けており、当該抵抗によって前記ドレイン回路部及び前記ソース回路部のインピーダンスを、前記外部保護回路のインピーダンスよりも大きくしている請求項1記載のISFETセンサ。
- 前記ESD保護素子がコンデンサであり、
前記抵抗よる前記ドレイン回路部及び前記ソース回路部のインピーダンスを、前記コンデンサのインピーダンスよりも大きくしている請求項2記載のISFETセンサ。 - 前記FETを覆うように前記基板上に形成され、前記FETのゲート部の上部に位置する凹部を有する中間層をさらに備え、
前記イオン感応層が、少なくとも前記凹部を覆うように前記中間層上に形成されており、
前記ESD保護層が、前記凹部以外の部分を覆うように前記中間層又は前記イオン感応層上に形成されている請求項1、2又は3記載のISFETセンサ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011113072A JP5749566B2 (ja) | 2011-05-20 | 2011-05-20 | Isfetセンサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011113072A JP5749566B2 (ja) | 2011-05-20 | 2011-05-20 | Isfetセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012242253A true JP2012242253A (ja) | 2012-12-10 |
JP5749566B2 JP5749566B2 (ja) | 2015-07-15 |
Family
ID=47464116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011113072A Active JP5749566B2 (ja) | 2011-05-20 | 2011-05-20 | Isfetセンサ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5749566B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015114870A1 (ja) * | 2014-01-28 | 2015-08-06 | シャープ株式会社 | ガスセンサ |
GB2544683A (en) * | 2010-10-08 | 2017-05-24 | Dnae Group Holdings Ltd | Electrostatic discharge protection |
EP3206029A1 (en) * | 2016-02-11 | 2017-08-16 | Sensirion AG | Sensor chip with electrostatic discharge protection element |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09508207A (ja) * | 1994-01-19 | 1997-08-19 | ハネウエル・インコーポレーテッド | Isfetセンサの静電放電保護 |
JP2008542733A (ja) * | 2005-05-30 | 2008-11-27 | メトラー−トレド アクチェンゲゼルシャフト | 電気化学センサ |
GB2484339A (en) * | 2010-10-08 | 2012-04-11 | Dna Electronics Ltd | Electrostatic discharge protection |
-
2011
- 2011-05-20 JP JP2011113072A patent/JP5749566B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09508207A (ja) * | 1994-01-19 | 1997-08-19 | ハネウエル・インコーポレーテッド | Isfetセンサの静電放電保護 |
JP2008542733A (ja) * | 2005-05-30 | 2008-11-27 | メトラー−トレド アクチェンゲゼルシャフト | 電気化学センサ |
GB2484339A (en) * | 2010-10-08 | 2012-04-11 | Dna Electronics Ltd | Electrostatic discharge protection |
WO2012046071A1 (en) * | 2010-10-08 | 2012-04-12 | Dna Electronics Ltd | Electrostatic discharge protection for ion sensitive field effect transistor |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2544683A (en) * | 2010-10-08 | 2017-05-24 | Dnae Group Holdings Ltd | Electrostatic discharge protection |
GB2544683B (en) * | 2010-10-08 | 2017-09-27 | Dnae Group Holdings Ltd | Electrostatic discharge protection |
WO2015114870A1 (ja) * | 2014-01-28 | 2015-08-06 | シャープ株式会社 | ガスセンサ |
EP3206029A1 (en) * | 2016-02-11 | 2017-08-16 | Sensirion AG | Sensor chip with electrostatic discharge protection element |
EP3206027A1 (en) * | 2016-02-11 | 2017-08-16 | Sensirion AG | Sensor chip comprising electrostatic discharge protection element |
WO2017137325A1 (en) * | 2016-02-11 | 2017-08-17 | Sensirion Ag | Sensor chip with electrostatic discharge protection element |
US11022590B2 (en) | 2016-02-11 | 2021-06-01 | Sensirion Ag | Electronic component including sensor device and method of manufacturing same |
Also Published As
Publication number | Publication date |
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JP5749566B2 (ja) | 2015-07-15 |
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