JP2012238812A - 受光デバイス - Google Patents

受光デバイス Download PDF

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Publication number
JP2012238812A
JP2012238812A JP2011108519A JP2011108519A JP2012238812A JP 2012238812 A JP2012238812 A JP 2012238812A JP 2011108519 A JP2011108519 A JP 2011108519A JP 2011108519 A JP2011108519 A JP 2011108519A JP 2012238812 A JP2012238812 A JP 2012238812A
Authority
JP
Japan
Prior art keywords
glass substrate
light receiving
receiving device
depression
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011108519A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012238812A5 (enExample
Inventor
Sadao Oku
定夫 奥
Hitoshi Kamamori
均 釜森
Hiroyuki Fujita
宏之 藤田
Koji Tsukagoshi
功二 塚越
Keiichiro Hayashi
恵一郎 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2011108519A priority Critical patent/JP2012238812A/ja
Publication of JP2012238812A publication Critical patent/JP2012238812A/ja
Publication of JP2012238812A5 publication Critical patent/JP2012238812A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
JP2011108519A 2011-05-13 2011-05-13 受光デバイス Withdrawn JP2012238812A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011108519A JP2012238812A (ja) 2011-05-13 2011-05-13 受光デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011108519A JP2012238812A (ja) 2011-05-13 2011-05-13 受光デバイス

Publications (2)

Publication Number Publication Date
JP2012238812A true JP2012238812A (ja) 2012-12-06
JP2012238812A5 JP2012238812A5 (enExample) 2014-04-24

Family

ID=47461437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011108519A Withdrawn JP2012238812A (ja) 2011-05-13 2011-05-13 受光デバイス

Country Status (1)

Country Link
JP (1) JP2012238812A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015125564A1 (ja) * 2014-02-18 2015-08-27 セイコーインスツル株式会社 光センサ装置
WO2015125565A1 (ja) * 2014-02-18 2015-08-27 セイコーインスツル株式会社 光センサ装置
JP2019085313A (ja) * 2017-11-09 2019-06-06 日本電気硝子株式会社 ガラス板及びこれを用いた波長変換パッケージ
WO2022059261A1 (ja) * 2020-09-16 2022-03-24 浜松ホトニクス株式会社 光検出モジュール及びビート分光装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145489A (ja) * 1997-11-07 1999-05-28 Matsushita Electric Ind Co Ltd 赤外線センサーおよびその製造方法
JP2002141432A (ja) * 2000-11-06 2002-05-17 Nikon Corp 半導体光センサパッケージおよびその製造方法
JP2005116600A (ja) * 2003-10-03 2005-04-28 Toko Inc カメラモジュール
JP2006013264A (ja) * 2004-06-28 2006-01-12 Kyocera Corp 光半導体素子収納用パッケージおよび光半導体装置
WO2010095367A1 (ja) * 2009-02-19 2010-08-26 日本電気株式会社 真空封止パッケージ、真空封止パッケージを有するプリント回路基板、電子機器、及び真空封止パッケージの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145489A (ja) * 1997-11-07 1999-05-28 Matsushita Electric Ind Co Ltd 赤外線センサーおよびその製造方法
JP2002141432A (ja) * 2000-11-06 2002-05-17 Nikon Corp 半導体光センサパッケージおよびその製造方法
JP2005116600A (ja) * 2003-10-03 2005-04-28 Toko Inc カメラモジュール
JP2006013264A (ja) * 2004-06-28 2006-01-12 Kyocera Corp 光半導体素子収納用パッケージおよび光半導体装置
WO2010095367A1 (ja) * 2009-02-19 2010-08-26 日本電気株式会社 真空封止パッケージ、真空封止パッケージを有するプリント回路基板、電子機器、及び真空封止パッケージの製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9773926B2 (en) 2014-02-18 2017-09-26 Sii Semiconductor Corporation Optical sensor device
CN106165108B (zh) * 2014-02-18 2017-11-24 精工半导体有限公司 光传感器装置
JP2015172567A (ja) * 2014-02-18 2015-10-01 セイコーインスツル株式会社 光センサ装置
JP2015173254A (ja) * 2014-02-18 2015-10-01 セイコーインスツル株式会社 光センサ装置
KR20160122136A (ko) * 2014-02-18 2016-10-21 에스아이아이 세미컨덕터 가부시키가이샤 광센서 장치
CN106062969A (zh) * 2014-02-18 2016-10-26 精工半导体有限公司 光传感器装置
CN106165108A (zh) * 2014-02-18 2016-11-23 精工半导体有限公司 光传感器装置
US9691914B2 (en) 2014-02-18 2017-06-27 Sii Semiconductor Corporation Optical sensor device
WO2015125565A1 (ja) * 2014-02-18 2015-08-27 セイコーインスツル株式会社 光センサ装置
CN106062969B (zh) * 2014-02-18 2017-12-08 精工半导体有限公司 光传感器装置
WO2015125564A1 (ja) * 2014-02-18 2015-08-27 セイコーインスツル株式会社 光センサ装置
TWI642198B (zh) * 2014-02-18 2018-11-21 Ablic Inc. 光感測器裝置
KR102313269B1 (ko) * 2014-02-18 2021-10-15 에이블릭 가부시키가이샤 광센서 장치
JP2019085313A (ja) * 2017-11-09 2019-06-06 日本電気硝子株式会社 ガラス板及びこれを用いた波長変換パッケージ
JP7280546B2 (ja) 2017-11-09 2023-05-24 日本電気硝子株式会社 ガラス板及びこれを用いた波長変換パッケージ
WO2022059261A1 (ja) * 2020-09-16 2022-03-24 浜松ホトニクス株式会社 光検出モジュール及びビート分光装置
JP7569646B2 (ja) 2020-09-16 2024-10-18 浜松ホトニクス株式会社 光検出モジュール及びビート分光装置

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