JP2012229454A5 - - Google Patents

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Publication number
JP2012229454A5
JP2012229454A5 JP2011096591A JP2011096591A JP2012229454A5 JP 2012229454 A5 JP2012229454 A5 JP 2012229454A5 JP 2011096591 A JP2011096591 A JP 2011096591A JP 2011096591 A JP2011096591 A JP 2011096591A JP 2012229454 A5 JP2012229454 A5 JP 2012229454A5
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JP
Japan
Prior art keywords
sputtering target
alloy
contained
producing
powder
Prior art date
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Application number
JP2011096591A
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English (en)
Japanese (ja)
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JP5153911B2 (ja
JP2012229454A (ja
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Application filed filed Critical
Priority claimed from JP2011096591A external-priority patent/JP5153911B2/ja
Priority to JP2011096591A priority Critical patent/JP5153911B2/ja
Priority to US14/111,504 priority patent/US9528181B2/en
Priority to CN201280003518.XA priority patent/CN103261473B/zh
Priority to TW101114153A priority patent/TWI438296B/zh
Priority to EP12774193.2A priority patent/EP2700735B1/en
Priority to PCT/JP2012/061301 priority patent/WO2012144655A1/ja
Priority to KR1020137011164A priority patent/KR101358345B1/ko
Publication of JP2012229454A publication Critical patent/JP2012229454A/ja
Publication of JP2012229454A5 publication Critical patent/JP2012229454A5/ja
Publication of JP5153911B2 publication Critical patent/JP5153911B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011096591A 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法 Expired - Fee Related JP5153911B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011096591A JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法
EP12774193.2A EP2700735B1 (en) 2011-04-22 2012-04-20 Sputtering target and method for producing same
CN201280003518.XA CN103261473B (zh) 2011-04-22 2012-04-20 溅射靶及其制造方法
TW101114153A TWI438296B (zh) 2011-04-22 2012-04-20 Sputtering target and its manufacturing method
US14/111,504 US9528181B2 (en) 2011-04-22 2012-04-20 Sputtering target and method for producing same
PCT/JP2012/061301 WO2012144655A1 (ja) 2011-04-22 2012-04-20 スパッタリングターゲット及びその製造方法
KR1020137011164A KR101358345B1 (ko) 2011-04-22 2012-04-20 스퍼터링 타겟 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011096591A JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法

Publications (3)

Publication Number Publication Date
JP2012229454A JP2012229454A (ja) 2012-11-22
JP2012229454A5 true JP2012229454A5 (cg-RX-API-DMAC7.html) 2013-01-10
JP5153911B2 JP5153911B2 (ja) 2013-02-27

Family

ID=47041745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011096591A Expired - Fee Related JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法

Country Status (7)

Country Link
US (1) US9528181B2 (cg-RX-API-DMAC7.html)
EP (1) EP2700735B1 (cg-RX-API-DMAC7.html)
JP (1) JP5153911B2 (cg-RX-API-DMAC7.html)
KR (1) KR101358345B1 (cg-RX-API-DMAC7.html)
CN (1) CN103261473B (cg-RX-API-DMAC7.html)
TW (1) TWI438296B (cg-RX-API-DMAC7.html)
WO (1) WO2012144655A1 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9822430B2 (en) 2012-02-29 2017-11-21 The United States Of America As Represented By The Secretary Of The Army High-density thermodynamically stable nanostructured copper-based bulk metallic systems, and methods of making the same
JP5594618B1 (ja) * 2013-02-25 2014-09-24 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP6176535B2 (ja) * 2013-02-25 2017-08-09 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP6651438B2 (ja) * 2013-09-27 2020-02-19 プランゼー エスエー 銅−ガリウムスパッタリングターゲット
CN108772567A (zh) * 2018-06-29 2018-11-09 米亚索乐装备集成(福建)有限公司 一种用于cig靶材打底层的合金材料、cig靶材及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1157652A (en) * 1966-06-15 1969-07-09 Ass Elect Ind Hardened Copper-Bismuth Base Alloys
JP3249408B2 (ja) 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP2002064062A (ja) * 2000-08-17 2002-02-28 Honda Motor Co Ltd 化合物半導体の成膜方法
WO2005005683A1 (ja) 2003-07-15 2005-01-20 Nikko Materials Co., Ltd. スパッタリングターゲット及び光記録媒体
US7803209B2 (en) 2004-11-30 2010-09-28 Nippon Mining & Metals Co., Ltd Sb-Te alloy sintered compact sputtering target
JP2006351142A (ja) * 2005-06-20 2006-12-28 Sony Corp 光記録媒体およびその製造方法ならびにスパッタリングターゲット
TWI432592B (zh) 2007-04-27 2014-04-01 Honeywell Int Inc 具有降低預燒時間之濺鍍靶,其製造方法及其用途
JP5192990B2 (ja) * 2008-11-11 2013-05-08 光洋應用材料科技股▲分▼有限公司 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
US20100116341A1 (en) * 2008-11-12 2010-05-13 Solar Applied Materials Technology Corp. Copper-gallium allay sputtering target, method for fabricating the same and related applications
JP5643524B2 (ja) * 2009-04-14 2014-12-17 株式会社コベルコ科研 Cu−Ga合金スパッタリングターゲットおよびその製造方法
JP2010280944A (ja) * 2009-06-04 2010-12-16 Hitachi Cable Ltd Cu−Ga合金、スパッタリングターゲット、Cu−Ga合金の製造方法、スパッタリングターゲットの製造方法
JP4793504B2 (ja) * 2009-11-06 2011-10-12 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法

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