JP2012227439A - スピン伝導素子 - Google Patents
スピン伝導素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 202
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 183
- 239000012535 impurity Substances 0.000 claims abstract description 95
- 230000004888 barrier function Effects 0.000 claims abstract description 40
- 238000001514 detection method Methods 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 435
- 230000005291 magnetic effect Effects 0.000 description 106
- 239000000758 substrate Substances 0.000 description 50
- 239000010408 film Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 31
- 239000013078 crystal Substances 0.000 description 26
- 230000005415 magnetization Effects 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000009826 distribution Methods 0.000 description 16
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- 230000000694 effects Effects 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 230000005290 antiferromagnetic effect Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000005755 formation reaction Methods 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910003321 CoFe Inorganic materials 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
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- 238000005498 polishing Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
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- 230000005669 field effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
Abstract
【解決手段】 このスピン伝導素子は、半導体層3と、半導体層3上に第1トンネル障壁層5Aを介して設けられた第1強磁性層1と、半導体層3上に、第1強磁性層1から離間し、且つ、第2トンネル障壁層5Bを介して設けられた第2強磁性層2と、を備え、半導体層3は、第1強磁性層1からその厚み方向に垂直な方向に沿って、第1強磁性層1から離れる方向へ広がる第1領域R1と、第1強磁性層1からその厚み方向に垂直な方向に沿って、第2強磁性層2に向かう方向に延びており、第1領域R1の不純物濃度よりも相対的に高い不純物濃度を有する第2領域R12と、を備えている。
【選択図】図1
Description
RN=(P2λNρ)/A
まず、ベース基板10A上に絶縁層4及び半導体層3が積層されたSOI基板を用意する。半導体層3はSiからなる。次に、SOI基板上に、フォトリソグラフィ工程を用いてアライメントマークを形成する。しかる後、不純物添加予定領域(R1M、R12、R2M)のみが開口したマスク(SiO2)を半導体層3上にパターニングし、このマスクを介して、半導体層3内に不純物を添加する。添加においては、拡散法又はイオン注入法を用いることができる。
Claims (5)
- 半導体層と、
前記半導体層上に第1トンネル障壁層を介して設けられた第1強磁性層と、
前記半導体層上に、前記第1強磁性層から離間し、且つ、第2トンネル障壁層を介して設けられた第2強磁性層と、
を備え、
前記半導体層は、
前記第1強磁性層からその厚み方向に垂直な方向に沿って、前記第1強磁性層から離れる方向へ広がる第1領域と、
前記第1強磁性層からその厚み方向に垂直な方向に沿って、前記第2強磁性層に向かう方向に延びており、前記第1領域の不純物濃度よりも相対的に高い不純物濃度を有する第2領域と、
を備えることを特徴とするスピン伝導素子。 - 前記第2領域は、前記半導体層における、前記第1及び第2強磁性層の直下の領域を含むことを特徴とする請求項1に記載のスピン伝導素子。
- 前記半導体層上における、前記第1及び第2強磁性層間の領域の外側の領域に設けられた第1参照電極と、
前記半導体層上における前記外側の領域に設けられた第2参照電極と、
前記第1強磁性層と前記第1参照電極との間に接続される電子流源と、
前記第2強磁性層と前記第2参照電極との間に接続される電圧検出回路と、
を備え、
前記第1強磁性層と前記第1参照電極との間に、前記第1領域が位置している、
ことを特徴とする請求項1又は2に記載のスピン伝導素子。 - 前記第1領域における不純物濃度は1×1013/cm3以上1×1018/cm3未満であり、
前記第2領域における不純物濃度は1×1018/cm3以上1×1020/cm3以下である、
ことを特徴とする請求項1乃至3のいずれか1項に記載のスピン伝導素子。 - 前記第1及び第2トンネル障壁層は、それぞれMgO、Al2O3、SiO2、ZnO、又は、MgAl2O4からなることを特徴とする請求項1乃至4のいずれか1項に記載のスピン伝導素子。
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JP2011095423A JP5655689B2 (ja) | 2011-04-21 | 2011-04-21 | スピン伝導素子 |
US13/445,476 US9401419B2 (en) | 2011-04-21 | 2012-04-12 | Spin transport device |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014154612A (ja) * | 2013-02-06 | 2014-08-25 | Tdk Corp | スピン注入電極構造及びそれを用いたスピン伝導素子 |
WO2015076298A1 (ja) * | 2013-11-20 | 2015-05-28 | Tdk株式会社 | 磁気抵抗効果素子、Spin-MOSFETおよびスピン伝導素子 |
JP2017085178A (ja) * | 2017-02-13 | 2017-05-18 | Tdk株式会社 | トンネル層 |
JP2017191953A (ja) * | 2017-07-27 | 2017-10-19 | Tdk株式会社 | 積層体 |
CN109724507A (zh) * | 2017-10-31 | 2019-05-07 | Tdk株式会社 | 磁传感器 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US9728713B2 (en) * | 2013-11-20 | 2017-08-08 | Tdk Corporation | Magnetoresistive element, spin MOSFET, magnetic sensor, and magnetic head |
US9941468B2 (en) * | 2014-08-08 | 2018-04-10 | Tohoku University | Magnetoresistance effect element and magnetic memory device |
KR20180098248A (ko) | 2015-11-18 | 2018-09-03 | 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 | 자기 터널 접합 소자 및 자기 메모리 |
US10418545B2 (en) | 2016-07-29 | 2019-09-17 | Tdk Corporation | Spin current magnetization reversal element, element assembly, and method for producing spin current magnetization reversal element |
US10439130B2 (en) | 2016-10-27 | 2019-10-08 | Tdk Corporation | Spin-orbit torque type magnetoresistance effect element, and method for producing spin-orbit torque type magnetoresistance effect element |
US10319901B2 (en) | 2016-10-27 | 2019-06-11 | Tdk Corporation | Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device |
US11276815B2 (en) | 2016-10-27 | 2022-03-15 | Tdk Corporation | Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device |
Citations (3)
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JP2010239011A (ja) * | 2009-03-31 | 2010-10-21 | Tdk Corp | スピン注入構造及びそれを用いたスピン伝導デバイス |
JP2010287666A (ja) * | 2009-06-10 | 2010-12-24 | Tdk Corp | スピン伝導素子 |
JP2010287629A (ja) * | 2009-06-09 | 2010-12-24 | Tdk Corp | 半導体スピンデバイス |
Family Cites Families (4)
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US6963091B1 (en) * | 2003-12-22 | 2005-11-08 | National Semiconductor Corporation | Spin-injection devices on silicon material for conventional BiCMOS technology |
KR100832583B1 (ko) * | 2007-01-04 | 2008-05-27 | 한국과학기술연구원 | 누설자장을 이용한 스핀 트랜지스터 |
JP5338711B2 (ja) * | 2010-02-23 | 2013-11-13 | Tdk株式会社 | 磁気センサー、磁気検出装置、及び磁気ヘッド |
WO2013122024A1 (ja) * | 2012-02-14 | 2013-08-22 | Tdk株式会社 | スピン注入電極構造及びそれを用いたスピン伝導素子 |
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2011
- 2011-04-21 JP JP2011095423A patent/JP5655689B2/ja not_active Expired - Fee Related
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- 2012-04-12 US US13/445,476 patent/US9401419B2/en active Active
Patent Citations (3)
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JP2010239011A (ja) * | 2009-03-31 | 2010-10-21 | Tdk Corp | スピン注入構造及びそれを用いたスピン伝導デバイス |
JP2010287629A (ja) * | 2009-06-09 | 2010-12-24 | Tdk Corp | 半導体スピンデバイス |
JP2010287666A (ja) * | 2009-06-10 | 2010-12-24 | Tdk Corp | スピン伝導素子 |
Non-Patent Citations (2)
Title |
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JPN6014022865; TOMOYUKI Sasaki, et al.: 'Evidence of Electrical Spin Injection Into Silicon Using MgO Tunnel Barrier' IEEE Transactions on Magnetics Volume:46, Issue:6, 201006, pp.1436-1439 * |
JPN7014001686; Tomoyuki SASAKI, et al.: 'Comparison of spin signals in silicon between nonlocal four-terminal and three-terminal methods' Applied Physics Letters 98, 20110106, pp.012508-1 - 012508-3 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014154612A (ja) * | 2013-02-06 | 2014-08-25 | Tdk Corp | スピン注入電極構造及びそれを用いたスピン伝導素子 |
WO2015076298A1 (ja) * | 2013-11-20 | 2015-05-28 | Tdk株式会社 | 磁気抵抗効果素子、Spin-MOSFETおよびスピン伝導素子 |
JP6037051B2 (ja) * | 2013-11-20 | 2016-11-30 | Tdk株式会社 | 磁気抵抗効果素子、Spin−MOSFETおよびスピン伝導素子 |
US9825155B2 (en) | 2013-11-20 | 2017-11-21 | Tdk Corporation | Magnetoresistive element and spin-transport element |
JP2017085178A (ja) * | 2017-02-13 | 2017-05-18 | Tdk株式会社 | トンネル層 |
JP2017191953A (ja) * | 2017-07-27 | 2017-10-19 | Tdk株式会社 | 積層体 |
CN109724507A (zh) * | 2017-10-31 | 2019-05-07 | Tdk株式会社 | 磁传感器 |
JP2019082429A (ja) * | 2017-10-31 | 2019-05-30 | Tdk株式会社 | 磁気センサ |
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US9401419B2 (en) | 2016-07-26 |
JP5655689B2 (ja) | 2015-01-21 |
US20120267734A1 (en) | 2012-10-25 |
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