JP2012227334A5 - - Google Patents

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JP2012227334A5
JP2012227334A5 JP2011093099A JP2011093099A JP2012227334A5 JP 2012227334 A5 JP2012227334 A5 JP 2012227334A5 JP 2011093099 A JP2011093099 A JP 2011093099A JP 2011093099 A JP2011093099 A JP 2011093099A JP 2012227334 A5 JP2012227334 A5 JP 2012227334A5
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JP
Japan
Prior art keywords
gas
etching method
plasma etching
microwave
substrate
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JP2011093099A
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English (en)
Japanese (ja)
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JP2012227334A (ja
JP5774356B2 (ja
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Publication of JP2012227334A5 publication Critical patent/JP2012227334A5/ja
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JP2011093099A 2011-04-19 2011-04-19 プラズマ処理方法 Active JP5774356B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011093099A JP5774356B2 (ja) 2011-04-19 2011-04-19 プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011093099A JP5774356B2 (ja) 2011-04-19 2011-04-19 プラズマ処理方法

Related Child Applications (1)

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JP2015132487A Division JP5918886B2 (ja) 2015-07-01 2015-07-01 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2012227334A JP2012227334A (ja) 2012-11-15
JP2012227334A5 true JP2012227334A5 (https=) 2014-04-24
JP5774356B2 JP5774356B2 (ja) 2015-09-09

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JP2011093099A Active JP5774356B2 (ja) 2011-04-19 2011-04-19 プラズマ処理方法

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JP (1) JP5774356B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216331A (ja) * 2013-04-22 2014-11-17 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
JP7756056B2 (ja) 2022-08-25 2025-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59114798A (ja) * 1982-12-22 1984-07-02 島田理化工業株式会社 マイクロ波プラズマ装置
JPH06163466A (ja) * 1992-11-26 1994-06-10 Sumitomo Metal Ind Ltd 薄膜の除去方法
DE19706682C2 (de) * 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
JP4593402B2 (ja) * 2005-08-25 2010-12-08 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
JP5172417B2 (ja) * 2008-03-27 2013-03-27 Sppテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
JP2010050046A (ja) * 2008-08-25 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置
JP5063626B2 (ja) * 2009-02-19 2012-10-31 株式会社日立ハイテクノロジーズ プラズマ処理装置

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