JP5774356B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP5774356B2
JP5774356B2 JP2011093099A JP2011093099A JP5774356B2 JP 5774356 B2 JP5774356 B2 JP 5774356B2 JP 2011093099 A JP2011093099 A JP 2011093099A JP 2011093099 A JP2011093099 A JP 2011093099A JP 5774356 B2 JP5774356 B2 JP 5774356B2
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etching
silicon
microwave
trench
plasma
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Japanese (ja)
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JP2012227334A5 (https=
JP2012227334A (ja
Inventor
秋彦 紺野
秋彦 紺野
久夫 安並
久夫 安並
秀則 豊岡
秀則 豊岡
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2011093099A 2011-04-19 2011-04-19 プラズマ処理方法 Active JP5774356B2 (ja)

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JP2011093099A JP5774356B2 (ja) 2011-04-19 2011-04-19 プラズマ処理方法

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JP2011093099A JP5774356B2 (ja) 2011-04-19 2011-04-19 プラズマ処理方法

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JP2015132487A Division JP5918886B2 (ja) 2015-07-01 2015-07-01 プラズマ処理方法

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JP2012227334A JP2012227334A (ja) 2012-11-15
JP2012227334A5 JP2012227334A5 (https=) 2014-04-24
JP5774356B2 true JP5774356B2 (ja) 2015-09-09

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216331A (ja) * 2013-04-22 2014-11-17 株式会社日立ハイテクノロジーズ プラズマエッチング方法
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
JP7756056B2 (ja) 2022-08-25 2025-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59114798A (ja) * 1982-12-22 1984-07-02 島田理化工業株式会社 マイクロ波プラズマ装置
JPH06163466A (ja) * 1992-11-26 1994-06-10 Sumitomo Metal Ind Ltd 薄膜の除去方法
DE19706682C2 (de) * 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
JP4593402B2 (ja) * 2005-08-25 2010-12-08 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
JP5172417B2 (ja) * 2008-03-27 2013-03-27 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
JP2010050046A (ja) * 2008-08-25 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置
JP5063626B2 (ja) * 2009-02-19 2012-10-31 株式会社日立ハイテクノロジーズ プラズマ処理装置

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