JP2012186362A - 量子カスケードレーザ - Google Patents
量子カスケードレーザ Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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Abstract
【解決手段】複数の活性層71と、複数の活性層71と共にカスケード構造を成す複数の注入層73と、を有するコア層を備える量子カスケードレーザである。活性層71の障壁層B21、量子井戸層W21、障壁層B22、量子井戸層W22、障壁層B23、量子井戸層W23、障壁層B24が、順に設けられている。量子井戸層W21の膜厚Lw21は、膜厚Lw22の膜厚Lw22よりも大きく、量子井戸層W22の膜厚Lw22は、量子井戸層W23の膜厚Lw23よりも大きく、障壁層B22の膜厚Lb22は、障壁層B23の膜厚Lb23よりも小さい。このような層構造によって生じるバンド構造により、発光を伴う電子の遷移確率の向上と、発光を伴わない電子遷移確率の抑制とが、実現できる。
【選択図】図1
Description
Claims (5)
- 量子カスケードレーザであって、
複数の活性層と、
前記複数の活性層と共にカスケード構造を成す複数の注入層と、
を有するコア層を備え、
前記活性層と前記注入層とはカスケード構造を成すように予め定められた方向に向かって交互に設けられ、
前記活性層は、第1〜第3の量子井戸層と第1〜第4の障壁層とを含み、
前記第1の障壁層、前記第1の量子井戸層、前記第2の障壁層、前記第2の量子井戸層、前記第3の障壁層、前記第3の量子井戸層、前記第4の障壁層は、前記方向に向かって、順に設けられ、
前記第1の量子井戸層の膜厚は、前記第2の量子井戸層の膜厚よりも大きく、
前記第2の量子井戸層の膜厚は、前記第3の量子井戸層の膜厚よりも大きく、
前記第2の障壁層の膜厚は、前記第3の障壁層の膜厚よりも小さい、
ことを特徴とする量子カスケードレーザ。 - 前記第1の量子井戸層の膜厚は、前記第2の量子井戸層の膜厚の1.05倍以上1.15倍以下の範囲にある、ことを特徴とする請求項1に記載の量子カスケードレーザ。
- 前記第2の障壁層の膜厚は、0.1nm以上1.2nm以下の範囲にある、ことを特徴とする請求項1又は請求項2に記載の量子カスケードレーザ。
- 前記第3の障壁層の膜厚は、1.2nmより大きく2.0nm以下の範囲にある、ことを特徴とする請求項1〜請求項3の何れか一項に記載の量子カスケードレーザ。
- 前記第1の量子井戸層、前記第2の量子井戸層及び前記第3の量子井戸層のそれぞれと、前記第2の障壁層及び前記第3の障壁層のそれぞれとの伝導帯のエネルギーの差は、0.5eV以上1.0eV以下の範囲にある、ことを特徴とする請求項1〜請求項4の何れか一項に記載の量子カスケードレーザ。
Priority Applications (3)
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JP2011049159A JP5776229B2 (ja) | 2011-03-07 | 2011-03-07 | 量子カスケードレーザ |
US13/410,375 US8817835B2 (en) | 2011-03-07 | 2012-03-02 | Quantum cascade laser |
EP12158041.9A EP2498351B1 (en) | 2011-03-07 | 2012-03-05 | Quantum cascade laser |
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JP2011049159A JP5776229B2 (ja) | 2011-03-07 | 2011-03-07 | 量子カスケードレーザ |
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JP2012186362A true JP2012186362A (ja) | 2012-09-27 |
JP5776229B2 JP5776229B2 (ja) | 2015-09-09 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016092080A (ja) * | 2014-10-30 | 2016-05-23 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
US11196233B2 (en) | 2019-01-30 | 2021-12-07 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
US11843224B2 (en) | 2020-08-21 | 2023-12-12 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016500472A (ja) * | 2012-11-30 | 2016-01-12 | ソーラボ クアンタム エレクトロニクス インコーポレイテッドThorlabs Quantum Electronics, Inc. | 波長のチューニング範囲の広いモノリシックな中赤外レーザ源 |
KR102113256B1 (ko) * | 2013-11-07 | 2020-05-20 | 삼성전자주식회사 | 다준위 에너지를 갖는 3중 연결 양자우물 구조를 포함하는 광학 소자 |
ES2694699T3 (es) * | 2013-11-30 | 2018-12-26 | Thorlabs Quantum Electronics, Inc. | Láser de cascada cuántica |
JP6309094B2 (ja) * | 2014-06-04 | 2018-04-11 | シャープ株式会社 | 量子カスケードレーザ |
CN106165219B (zh) * | 2015-03-13 | 2019-04-23 | 株式会社东芝 | 量子级联激光器 |
Citations (1)
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JP2009206340A (ja) * | 2008-02-28 | 2009-09-10 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
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US5457709A (en) | 1994-04-04 | 1995-10-10 | At&T Ipm Corp. | Unipolar semiconductor laser |
DE10355949A1 (de) * | 2003-11-29 | 2005-07-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Quantenkaskadenlaser |
JP2008060396A (ja) * | 2006-08-31 | 2008-03-13 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
JP5641667B2 (ja) * | 2007-01-18 | 2014-12-17 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
JP2010278326A (ja) * | 2009-05-29 | 2010-12-09 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
JP5234022B2 (ja) * | 2009-07-15 | 2013-07-10 | 住友電気工業株式会社 | 窒化物系半導体発光素子 |
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- 2012-03-05 EP EP12158041.9A patent/EP2498351B1/en active Active
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JP2009206340A (ja) * | 2008-02-28 | 2009-09-10 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016092080A (ja) * | 2014-10-30 | 2016-05-23 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
US11196233B2 (en) | 2019-01-30 | 2021-12-07 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
US11843224B2 (en) | 2020-08-21 | 2023-12-12 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
Also Published As
Publication number | Publication date |
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US8817835B2 (en) | 2014-08-26 |
US20120230359A1 (en) | 2012-09-13 |
EP2498351B1 (en) | 2020-12-23 |
EP2498351A3 (en) | 2017-08-16 |
EP2498351A2 (en) | 2012-09-12 |
JP5776229B2 (ja) | 2015-09-09 |
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