JP2012172150A5 - - Google Patents

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Publication number
JP2012172150A5
JP2012172150A5 JP2012029573A JP2012029573A JP2012172150A5 JP 2012172150 A5 JP2012172150 A5 JP 2012172150A5 JP 2012029573 A JP2012029573 A JP 2012029573A JP 2012029573 A JP2012029573 A JP 2012029573A JP 2012172150 A5 JP2012172150 A5 JP 2012172150A5
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JP
Japan
Prior art keywords
group
gallium
component
liquid carrier
optionally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012029573A
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English (en)
Japanese (ja)
Other versions
JP5902502B2 (ja
JP2012172150A (ja
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Publication date
Priority claimed from US13/030,175 external-priority patent/US8343267B2/en
Application filed filed Critical
Publication of JP2012172150A publication Critical patent/JP2012172150A/ja
Publication of JP2012172150A5 publication Critical patent/JP2012172150A5/ja
Application granted granted Critical
Publication of JP5902502B2 publication Critical patent/JP5902502B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012029573A 2011-02-18 2012-02-14 ガリウム配合インク、並びにその製造方法および使用方法 Expired - Fee Related JP5902502B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/030,175 US8343267B2 (en) 2011-02-18 2011-02-18 Gallium formulated ink and methods of making and using same
US13/030,175 2011-02-18

Publications (3)

Publication Number Publication Date
JP2012172150A JP2012172150A (ja) 2012-09-10
JP2012172150A5 true JP2012172150A5 (cg-RX-API-DMAC7.html) 2015-03-19
JP5902502B2 JP5902502B2 (ja) 2016-04-13

Family

ID=46605120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012029573A Expired - Fee Related JP5902502B2 (ja) 2011-02-18 2012-02-14 ガリウム配合インク、並びにその製造方法および使用方法

Country Status (7)

Country Link
US (2) US8343267B2 (cg-RX-API-DMAC7.html)
JP (1) JP5902502B2 (cg-RX-API-DMAC7.html)
KR (1) KR101889765B1 (cg-RX-API-DMAC7.html)
CN (1) CN102702841B (cg-RX-API-DMAC7.html)
DE (1) DE102012003206A1 (cg-RX-API-DMAC7.html)
FR (1) FR2971787A1 (cg-RX-API-DMAC7.html)
TW (1) TWI464221B (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same
US9105797B2 (en) * 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
JP6080573B2 (ja) * 2013-01-31 2017-02-15 キヤノン株式会社 電子写真感光体、プロセスカートリッジおよび電子写真装置
CN110518084B (zh) * 2019-08-06 2021-03-05 苏州腾晖光伏技术有限公司 一种镓局域掺杂的perc电池及其制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993004212A1 (en) 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
GB9315771D0 (en) 1993-07-30 1993-09-15 Epichem Ltd Method of depositing thin metal films
US6126740A (en) 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
GB9711799D0 (en) 1997-06-07 1997-08-06 Vecht Aron Preparation of sulphides and selenides
US7524528B2 (en) 2001-10-05 2009-04-28 Cabot Corporation Precursor compositions and methods for the deposition of passive electrical components on a substrate
US6875661B2 (en) 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US7494841B2 (en) 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
US20100029036A1 (en) 2006-06-12 2010-02-04 Robinson Matthew R Thin-film devices formed from solid group iiia particles
EP2101931B1 (en) 2006-11-09 2015-05-13 Alliance for Sustainable Energy, LLC Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
WO2008057119A1 (en) 2006-11-09 2008-05-15 Midwest Research Institue Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
WO2008095146A2 (en) 2007-01-31 2008-08-07 Van Duren Jeroen K J Solar cell absorber layer formed from metal ion precursors
CA2684535C (en) * 2007-04-18 2017-03-14 Nanoco Technologies Limited Fabrication of electrically active films based on multiple layers
KR101634405B1 (ko) * 2007-12-19 2016-06-28 메르크 파텐트 게엠베하 높은 전기전도성의 광변성 안료
US20090260670A1 (en) * 2008-04-18 2009-10-22 Xiao-Chang Charles Li Precursor ink for producing IB-IIIA-VIA semiconductors
CN101870458B (zh) * 2009-04-22 2012-05-09 钟润文 多元金属硫族元素化合物和靶材及涂层材料的制备方法
US8277894B2 (en) * 2009-07-16 2012-10-02 Rohm And Haas Electronic Materials Llc Selenium ink and methods of making and using same
US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
US8709917B2 (en) * 2010-05-18 2014-04-29 Rohm And Haas Electronic Materials Llc Selenium/group 3A ink and methods of making and using same
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same

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