JP2012169622A - 薄膜形成のための方法とシステム - Google Patents

薄膜形成のための方法とシステム Download PDF

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Publication number
JP2012169622A
JP2012169622A JP2012025794A JP2012025794A JP2012169622A JP 2012169622 A JP2012169622 A JP 2012169622A JP 2012025794 A JP2012025794 A JP 2012025794A JP 2012025794 A JP2012025794 A JP 2012025794A JP 2012169622 A JP2012169622 A JP 2012169622A
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Prior art keywords
group iii
thin film
reaction space
substrate
precursor
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Japanese (ja)
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JP2012169622A5 (show.php
Inventor
A Kraus Philip
エー． クラウス，フィリップ
Nijhawan Sandeep
ニジャワン，サンディープ
Cheng Chua Thai
チェン チュア，タイ
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Intermolecular Inc
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Intermolecular Inc
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Publication of JP2012169622A publication Critical patent/JP2012169622A/ja
Publication of JP2012169622A5 publication Critical patent/JP2012169622A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • H10P14/24—
    • H10P14/2901—
    • H10P14/3416—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2012025794A 2011-02-10 2012-02-09 薄膜形成のための方法とシステム Pending JP2012169622A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/025,046 2011-02-10
US13/025,046 US8143147B1 (en) 2011-02-10 2011-02-10 Methods and systems for forming thin films

Publications (2)

Publication Number Publication Date
JP2012169622A true JP2012169622A (ja) 2012-09-06
JP2012169622A5 JP2012169622A5 (show.php) 2015-03-26

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JP2012025794A Pending JP2012169622A (ja) 2011-02-10 2012-02-09 薄膜形成のための方法とシステム

Country Status (5)

Country Link
US (4) US8143147B1 (show.php)
EP (1) EP2487276A1 (show.php)
JP (1) JP2012169622A (show.php)
KR (1) KR20120092043A (show.php)
TW (1) TW201237207A (show.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019212714A (ja) * 2018-06-01 2019-12-12 国立大学法人名古屋大学 Ｉｉｉ族窒化物半導体素子の製造装置および製造方法ならびに半導体ウエハの製造方法
JP2024520296A (ja) * 2021-05-11 2024-05-24 ジュスン エンジニアリング カンパニー リミテッド 薄膜の形成方法

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JP5423529B2 (ja) * 2010-03-29 2014-02-19 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US10707082B2 (en) * 2011-07-06 2020-07-07 Asm International N.V. Methods for depositing thin films comprising indium nitride by atomic layer deposition
US8778811B2 (en) * 2011-08-18 2014-07-15 Intermolecular, Inc. Low temperature migration enhanced Si-Ge epitaxy with plasma assisted surface activation
US8975166B2 (en) * 2011-11-22 2015-03-10 Intermolecular, Inc. Method and apparatus for atomic hydrogen surface treatment during GaN epitaxy
US8524581B2 (en) * 2011-12-29 2013-09-03 Intermolecular, Inc. GaN epitaxy with migration enhancement and surface energy modification
JP2013222884A (ja) 2012-04-18 2013-10-28 Furukawa Co Ltd 気相成長装置および成膜方法
EP2872668B1 (en) * 2012-07-13 2018-09-19 Gallium Enterprises Pty Ltd Apparatus and method for film formation
US20140124788A1 (en) * 2012-11-06 2014-05-08 Intermolecular, Inc. Chemical Vapor Deposition System
CN103258722A (zh) * 2013-04-27 2013-08-21 中国电子科技集团公司第十三研究所 GaAs衬底采用AlGaInN缓冲层生长三族氮化物的方法
CN104342637B (zh) * 2013-07-26 2017-02-15 北京北方微电子基地设备工艺研究中心有限责任公司 一种原子层沉积设备
US9368415B1 (en) * 2015-02-25 2016-06-14 International Business Machines Corporation Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layers
US10745808B2 (en) * 2015-07-24 2020-08-18 Versum Materials Us, Llc Methods for depositing Group 13 metal or metalloid nitride films
JP7098677B2 (ja) 2020-03-25 2022-07-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
JP2023020168A (ja) * 2021-07-30 2023-02-09 株式会社Ｓｃｒｅｅｎホールディングス Ｉｉｉ族窒化物半導体の製造方法
KR20250098474A (ko) * 2023-12-22 2025-07-01 주성엔지니어링(주) 질화갈륨막 형성 방법
KR20250129382A (ko) * 2024-02-22 2025-08-29 주성엔지니어링(주) 3-5족 박막 형성 방법

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
JP2019212714A (ja) * 2018-06-01 2019-12-12 国立大学法人名古屋大学 Ｉｉｉ族窒化物半導体素子の製造装置および製造方法ならびに半導体ウエハの製造方法
JP7066178B2 (ja) 2018-06-01 2022-05-13 国立大学法人東海国立大学機構 Ｉｉｉ族窒化物半導体素子の製造装置および製造方法ならびに半導体ウエハの製造方法
JP2024520296A (ja) * 2021-05-11 2024-05-24 ジュスン エンジニアリング カンパニー リミテッド 薄膜の形成方法

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US20130118404A1 (en) 2013-05-16
TW201237207A (en) 2012-09-16
US8318590B2 (en) 2012-11-27
US20120208352A1 (en) 2012-08-16
EP2487276A1 (en) 2012-08-15
US20120208357A1 (en) 2012-08-16
US8377803B2 (en) 2013-02-19
KR20120092043A (ko) 2012-08-20
US8143147B1 (en) 2012-03-27

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