JP2012164877A5

JP2012164877A5 - Lead frame, semiconductor device, lead frame manufacturing method, and semiconductor device manufacturing method

Info

Publication number: JP2012164877A5
Application number: JP2011025132A
Authority: JP
Filing date: 2011-02-08
Publication date: 2013-12-19
Anticipated expiration: 2031-02-08

Description

本発明の一観点によれば、セクションバーと、前記セクションバーによって支持されたダイパッド及びリードを有する単位リードフレームが複数個連設されたリードフレームであって、前記セクションバー及び前記ダイパッド及び前記リードを画定する開口部と、前記セクションバーの下面に形成された凹部と、前記ダイパッドの側面又は前記リードの側面である前記開口部の内壁面の少なくとも一部及び前記凹部の内壁面のみに形成される、表面が粗面化された粗面めっき層と、前記粗面めっき層に接するように前記開口部の少なくとも一部と前記凹部とに埋め込まれた絶縁性の樹脂層と、を有する。 According to one aspect of the present invention, there is provided a lead frame and a section bar, the unit lead frame having a supported die pad and lead by the section bar is plural continuously provided, said section bars and the die pad and the An opening for defining a lead, a recess formed on the lower surface of the section bar, a side surface of the die pad or at least a part of an inner wall surface of the opening that is a side surface of the lead, and only an inner wall surface of the recess. A rough surface plating layer having a roughened surface, and an insulating resin layer embedded in at least a part of the opening and the recess so as to be in contact with the rough surface plating layer.

本発明の一観点によれば、セクションバーと、前記セクションバーによって支持されたダイパッド及びリードを有する単位リードフレームが複数個連設されるリードフレームの製造方法であって、前記セクションバー及び前記ダイパッド及び前記リードを画定するための開口部を導電性基板に形成するとともに、前記セクションバーとなる前記導電性基板の下面に凹部を形成して基板フレームを形成する基板形成工程と、前記ダイパッドの側面又は前記リードの側面である前記開口部の内壁面の少なくとも一部及び前記凹部の内壁面のみに、表面が粗面化された粗面めっき層を形成する粗化工程と、前記粗面めっき層に接するように絶縁性の樹脂を、前記開口部の少なくとも一部と前記凹部とに埋め込む樹脂埋め込み工程と、を有する。 According to one aspect of the present invention, a manufacturing method of a lead frame and a section bar, the unit lead frame having a supported die pad and lead by the section bar is plural continuously provided, said section bars and the Forming a substrate frame by forming an opening for defining the die pad and the lead in the conductive substrate, and forming a substrate frame by forming a recess on a lower surface of the conductive substrate serving as the section bar ; A roughening step of forming a rough surface plating layer having a roughened surface only on at least a part of the inner wall surface of the opening and the inner wall surface of the recess, which is the side surface or the side surface of the lead; an insulating resin so as to be in contact with the layer, having a resin embedding step embeds into at least a portion with the recess of the opening.

次に、図１３（ｃ）に示すように、ダイシングソーにより、矢印の位置のセクションバー１１及び封止樹脂７３を切断し、個別の半導体装置７０に個片化する。このような工程により、図１３（ｄ）に示す個別の半導体装置７０が製造される。 Next, as shown in FIG. 1 3 (c), a dicing saw, to cut the section bar 11 and the sealing resin 73 of the position of the arrow, to 70 two pieces of individual semiconductor devices. Through such a process, the individual semiconductor device 70 shown in FIG. 1 3 (d) is manufactured.

Claims

And section bar, the unit lead frame having a supported die pad and lead by the section bar is a lead frame, which is several continuously arranged,
An opening defining the section bar and the die pad and the lead;
A recess formed in the lower surface of the section bar;
A rough surface plating layer having a roughened surface formed on at least a part of the inner wall surface of the opening and the inner wall surface of the recess, which is the side surface of the die pad or the side surface of the lead,
An insulating resin layer embedded in at least a part of the opening and the recess so as to be in contact with the rough surface plating layer;
A lead frame comprising:

The opening is formed by communicating a first recess formed on the lower surface side of the die pad and a second recess formed on the upper surface side of the die pad,
The lead frame according to claim 1, wherein the resin layer is embedded to fill the first recess, the second recess, and the recess.

  The opening is formed by communicating a first recess formed on the lower surface side of the die pad and a second recess formed on the upper surface side of the die pad,
  The resin layer is embedded to fill the recess and the first recess,
  The lead frame according to claim 1, wherein an inner wall surface of the second recess is exposed from the resin layer.

  A lead frame in which a plurality of unit lead frames each having a section bar and a die pad and leads supported by the section bar are provided,
  An opening that defines the section bar, the die pad, and the lead, and is formed by communicating a first recess formed on the lower surface side of the die pad and a second recess formed on the upper surface side of the die pad. And
  A recess formed in the lower surface of the section bar;
  A rough plating layer having a roughened surface formed only on the inner wall surface of the second recess,
  An insulating resin layer embedded so as to fill the second recess so as to be in contact with the rough plating layer,
  The lead frame, wherein the first recess and the inner wall surface of the recess are exposed to the outside.

The lead frame according to any one of claims 1 to 4, wherein a surface roughness Ra of the rough plating layer is 100 nm or more.

The lead frame according to claim 1, wherein the lower surface of the die pad is narrower than the upper surface of the die pad.

  The unit lead frame of the lead frame according to any one of claims 1 to 3,
  A semiconductor element mounted on the die pad;
  A bonding wire for electrically connecting the semiconductor element and the lead;
  A sealing resin for sealing the semiconductor element and the bonding wire;
  2. A semiconductor device according to claim 1, wherein an outer side surface of the lead and an outer side surface of the resin layer filled in the recess are formed flush with each other.

  The unit lead frame of the lead frame according to claim 4,
  A semiconductor element mounted on the die pad;
  A bonding wire for electrically connecting the semiconductor element and the lead;
  A sealing resin for sealing the semiconductor element and the bonding wire;
A semiconductor device comprising:

And section bar, the unit lead frame having a supported die pad and lead by the section bar is a manufacturing method of a lead frame are plural continuously provided,
A substrate forming step of forming an opening for defining the section bar, the die pad and the lead in the conductive substrate, and forming a substrate frame by forming a recess on a lower surface of the conductive substrate to be the section bar. When,
A roughening step of forming a rough surface plating layer having a roughened surface only on at least a part of the inner wall surface of the opening and the inner wall surface of the recess which is the side surface of the die pad or the side surface of the lead;
An insulating resin so as to be in contact with the rough surface plated layer, a resin embedding step embeds into at least a portion with the recess of the opening,
A method for manufacturing a lead frame, comprising:

In the substrate forming step, the substrate frame is formed so that the openings are continuously formed in space.
The resin embedding step includes
By the base frame after the roughening step was fixed in a mold, injecting while applying heat and pressure to the insulating of the resin from the gate portion provided on the outer side than the unit lead frames, the resin said opening The lead frame manufacturing method according to claim 9 , wherein the portion is filled.

The substrate forming step includes
Forming a resist layer having openings corresponding to the shapes of the openings and the recesses on both surfaces of the conductive substrate;
Etching the conductive substrate from both sides using the resist layer as an etching mask,
The step of forming the rough surface plating layer includes forming the rough surface plating layer by electrolytic plating using the resist layer as a mask ,
The resin filling step is to fill the opening and the recess, the manufacturing method of lead frame according to claim 9 or 10, characterized in that filling the resin into the opening and the recess.

And section bar, the unit lead frame having a supported die pad and lead by the section bar is a manufacturing method of a lead frame are plural continuously provided,
A first substrate is formed on the lower surface of the conductive substrate that forms the opening defining the section bar, the die pad, and the lead, and the concave portion is formed on the lower surface of the conductive substrate serving as the section bar. Processing steps,
A roughening step of forming a rough surface plating layer having a roughened surface only on the inner wall surface of the first recess and the inner wall surface of the recess ;
So as to be in contact with the rough surface plated layer, and before SL so as to fill the first recess and the recess, a step potting embedding an insulating resin into the first recess and the recess,
The upper surface of the conductive substrate, a second substrate processing step of forming the opening portion forms a second recess communicating with the first recess,
A method for manufacturing a lead frame, comprising:

In the first substrate processing step, the conductive substrate is processed so that the first concave portions are spatially continuously formed,
The resin embedding step includes
The conductive substrate after the roughening step is fixed with a mold, and an insulating resin is injected from a gate portion provided outside the unit lead frame while being heated and pressurized, whereby the resin is injected into the first substrate. The lead frame manufacturing method according to claim 12 , wherein one recess is filled.

  A method of manufacturing a lead frame in which a plurality of unit lead frames each having a section bar and a die pad and leads supported by the section bar are provided,
  A first substrate processing step of forming, on an upper surface of a conductive substrate, a second recess that constitutes an opening that defines the section bar, the die pad, and the lead;
  A roughening step of forming a rough surface plating layer having a roughened surface only on the inner wall surface of the second recess;
  A resin embedding step of embedding an insulating resin in the second recess so as to be in contact with the rough plating layer and filling the second recess;
  Second substrate processing for forming a first concave portion communicating with the second concave portion on the lower surface of the conductive substrate to form the opening, and forming a concave portion on the lower surface of the conductive substrate serving as the section bar Process,
A method for manufacturing a lead frame, comprising:

A method for manufacturing a semiconductor device using a lead frame manufactured by the method for manufacturing a lead frame according to any one of claims 9 to 13 ,
Mounting a semiconductor element on each die pad of the lead frame;
Electrically connecting the electrode of the semiconductor element and the lead by a bonding wire;
Sealing the semiconductor element and the bonding wire with a sealing resin;
Cutting the sealing resin at a predetermined position, the section bar, and the resin filled in the recesses, and dividing the semiconductor resin unit into units;
A method for manufacturing a semiconductor device, comprising:

  A method of manufacturing a semiconductor device using a lead frame manufactured by the method of manufacturing a lead frame according to claim 14,
  Mounting a semiconductor element on each die pad of the lead frame;
  Electrically connecting the electrode of the semiconductor element and the lead by a bonding wire;
  Sealing the semiconductor element and the bonding wire with a sealing resin;
  Cutting the sealing resin at a predetermined position and the section bar, and dividing each semiconductor device unit;
A method for manufacturing a semiconductor device, comprising: