JP2012147011A - Processing unit - Google Patents

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JP2012147011A
JP2012147011A JP2012076874A JP2012076874A JP2012147011A JP 2012147011 A JP2012147011 A JP 2012147011A JP 2012076874 A JP2012076874 A JP 2012076874A JP 2012076874 A JP2012076874 A JP 2012076874A JP 2012147011 A JP2012147011 A JP 2012147011A
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cleaning mechanism
cleaning
wafer
processing apparatus
back surface
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JP5415582B2 (en
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Kohei Mori
公 平 森
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Abstract

PROBLEM TO BE SOLVED: To surely remove polymers and particles adhered to a rear face without peeling off patterning applied to a surface, and to surely remove particles adhered to respective faces with pressing force corresponding to the respective faces.SOLUTION: This processing unit includes a first cleaning mechanism 30 for cleaning one face of the peripheral fringe part of a workpiece W by abutting on the face, and a second cleaning mechanism 40 for cleaning the other face of the peripheral fringe part by abutting on the face. The processing unit also includes a first adjusting mechanism 10 for adjusting pressing force applied to one face of the peripheral fringe part, and second adjusting mechanisms 21, 25 for adjusting pressing force applied to the other face of the peripheral fringe part. The second cleaning mechanism 40 has a second cleaning part which can abut on the other face of the peripheral fringe part and in which the center part of the cross-section thereof is made of a hard part and the peripheral part surrounding the circumference of the center part is made of a soft part softer than the hard part. When cleaning the peripheral fringe part of the workpiece W, the hard part is brought into abutting contact with the side end face of the peripheral fringe part of the workpiece W, and the soft part is brought into abutting contact with the other face of the peripheral fringe part of the workpiece W.

Description

本発明は、半導体ウエハなどからなる被処理体の周縁部を処理する処理装置に関する。   The present invention relates to a processing apparatus for processing a peripheral portion of a target object made of a semiconductor wafer or the like.

従来から、基板(被処理体)を保持する保持部と、この基板の周縁部の表面(一方の面)を洗浄するスポンジ状の第1基板洗浄ブラシと、この第1基板洗浄ブラシに対向配置され、基板の周縁部の裏面(他方の面)を洗浄するスポンジ状の第2基板洗浄ブラシと、第1基板洗浄ブラシおよび第2基板洗浄ブラシを、互いに接近および離間させるブラシ接離機構と、を含む、処理装置が知られている(特許文献1参照)。   Conventionally, a holding unit that holds a substrate (object to be processed), a sponge-like first substrate cleaning brush that cleans the surface (one surface) of the peripheral portion of the substrate, and a first substrate cleaning brush that is opposed to the first substrate cleaning brush A sponge-like second substrate cleaning brush that cleans the back surface (the other surface) of the peripheral edge of the substrate, and a brush contact / separation mechanism that causes the first substrate cleaning brush and the second substrate cleaning brush to approach and separate from each other; Is known (see Patent Document 1).

特開2007−157936号公報JP 2007-157936 A

特許文献1に記載されたような従来の処理装置によれば、被処理体の周縁部の表面と裏面を洗浄することはできるものの、第一洗浄部から被処理体の周縁部の表面に加わる押圧力と、第二洗浄部から被処理体の周縁部の裏面に加わる押圧力とを制御することはできなかった。このため、従来の処理装置では、以下に示すような問題がある。   According to the conventional processing apparatus as described in Patent Document 1, although the surface and the back surface of the peripheral portion of the object to be processed can be cleaned, the first cleaning portion adds to the surface of the peripheral portion of the object to be processed. It was not possible to control the pressing force and the pressing force applied to the back surface of the peripheral edge of the object to be processed from the second cleaning unit. For this reason, the conventional processing apparatus has the following problems.

一般に、被処理体の裏面には、除去しづらいポリマーやパーティクルが付着する傾向にある。このため、被処理体の裏面に付着したポリマーやパーティクルを除去するために強い力で洗浄すると、被処理体の表面に施されたパターニングが剥がれることがある。他方、表面に施されたパターニングが剥がれないように弱い力で洗浄すると、裏面に付着したポリマーやパーティクルを除去することができなかった。   Generally, polymers and particles that are difficult to remove tend to adhere to the back surface of the object to be processed. For this reason, patterning applied to the surface of the object to be processed may be peeled off when cleaning is performed with a strong force to remove the polymer or particles attached to the back surface of the object to be processed. On the other hand, when washing was performed with a weak force so that the patterning applied to the front surface was not peeled off, the polymer and particles adhering to the back surface could not be removed.

また、パーティクルにも様々な種類のものがあるので、付着するパーティクルの種類によっては被処理体から除去しにくいものもある。そして、被処理体の表面に付着するパーティクルの種類と、裏面に付着するパーティクルの種類が異なることもあり、一方の面(例えば表面)に除去しにくいパーティクルが付着し、他方の面(例えば裏面)に除去しやすいパーティクルが付着した場合には、それぞれの面に応じた押圧力で洗浄することができなかった。   In addition, since there are various types of particles, there are some types of particles that are difficult to remove from the object to be processed, depending on the type of particles attached. The type of particles adhering to the surface of the object to be processed may be different from the type of particles adhering to the back surface, and particles that are difficult to remove adhere to one surface (for example, the front surface) and the other surface (for example, the back surface) When particles that are easy to remove adhere to the surface, it was not possible to clean with a pressing force corresponding to each surface.

本発明は、このような点を考慮してなされたものであり、表面に施されたパターニングを剥がすことなく、裏面に付着したポリマーやパーティクルを確実に除去したり、それぞれの面に応じた押圧力でそれぞれの面に付着したパーティクルを確実に除去したりすることができる処理装置を提供することを目的とする。   The present invention has been made in consideration of such points, and without removing the patterning applied to the front surface, the polymer and particles adhering to the back surface can be surely removed, or the pressing according to each surface can be performed. It is an object of the present invention to provide a processing apparatus capable of reliably removing particles adhering to each surface by pressure.

本発明による処理装置は、
被処理体を保持する保持部と、
前記保持部によって保持された前記被処理体を回転させる回転駆動部と、
前記被処理体の周縁部の一方の面に当接して洗浄する第一洗浄機構と、
前記被処理体の前記周縁部の他方の面に当接して洗浄する第二洗浄機構と、
前記第一洗浄機構から前記周縁部の一方の面に加わる押圧力を調整する第一調整機構と、
前記第二洗浄機構から前記周縁部の他方の面に加わる押圧力を調整する第二調整機構と、
を備えている。
The processing apparatus according to the present invention comprises:
A holding unit for holding the object to be processed;
A rotation driving unit that rotates the object to be processed held by the holding unit;
A first cleaning mechanism for cleaning in contact with one surface of the peripheral edge of the workpiece;
A second cleaning mechanism for cleaning in contact with the other surface of the peripheral edge of the workpiece;
A first adjustment mechanism that adjusts the pressing force applied to one surface of the peripheral edge from the first cleaning mechanism;
A second adjustment mechanism for adjusting the pressing force applied to the other surface of the peripheral edge from the second cleaning mechanism;
It has.

本発明による処理装置において、
前記第二調整機構は、前記第二洗浄機構に設けられた永久磁石と、該永久磁石に磁力を加えることによって前記周縁部の他方の面に加わる押圧力を調整する電磁石と、を有することが好ましい。
In the processing apparatus according to the present invention,
The second adjustment mechanism may include a permanent magnet provided in the second cleaning mechanism, and an electromagnet that adjusts a pressing force applied to the other surface of the peripheral portion by applying a magnetic force to the permanent magnet. preferable.

本発明による処理装置において、
前記第一洗浄機構は、前記周縁部の一方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第一洗浄部を有することが好ましい。
In the processing apparatus according to the present invention,
The first cleaning mechanism is capable of abutting against one surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion It is preferable to have the 1st washing | cleaning part which consists of.

本発明による処理装置において、
前記第二洗浄機構は、前記周縁部の他方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第二洗浄部を有することが好ましい。
In the processing apparatus according to the present invention,
The second cleaning mechanism is capable of abutting against the other surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion It is preferable to have the 2nd washing | cleaning part which consists of.

本発明による処理装置において、
前記第一洗浄機構に連結され、該第一洗浄機構および前記第二洗浄機構を前記被処理体の一方の面から他方の面に向かう方向に移動させる移動機構をさらに備えたことが好ましい。
In the processing apparatus according to the present invention,
It is preferable to further include a moving mechanism that is connected to the first cleaning mechanism and moves the first cleaning mechanism and the second cleaning mechanism in a direction from one surface of the workpiece to the other surface.

本発明による処理装置において、
前記第二洗浄機構は、前記第一洗浄機構に連結されるとともに、揺動軸を中心に揺動可能となり、該第一洗浄機構側に揺動されたときに前記周縁部の前記他方の面に当接することが好ましい。
In the processing apparatus according to the present invention,
The second cleaning mechanism is connected to the first cleaning mechanism, and is swingable about a swing shaft. When the second cleaning mechanism is swung toward the first cleaning mechanism, the other surface of the peripheral portion is It is preferable to abut.

本発明による処理装置において、
前記第二洗浄機構は、前記第一洗浄機構が前記周縁部の前記一方の面に当接した後に、前記揺動軸を中心に該第一洗浄機構側に揺動されて該周縁部の前記他方の面に当接することが好ましい。
In the processing apparatus according to the present invention,
The second cleaning mechanism is swung toward the first cleaning mechanism around the swing shaft after the first cleaning mechanism abuts on the one surface of the peripheral edge, and the second cleaning mechanism It is preferable to contact the other surface.

本発明による処理装置において、
前記第二調整機構は、第一調整機構によって前記第一洗浄機構から前記周縁部の一方の面に加えられる押圧力よりも大きな押圧力を、前記第二洗浄機構から前記周縁部の他方の面に加えることが好ましい。
In the processing apparatus according to the present invention,
The second adjusting mechanism applies a pressing force larger than the pressing force applied from the first cleaning mechanism to the one surface of the peripheral portion by the first adjusting mechanism, and the other surface of the peripheral portion from the second cleaning mechanism. It is preferable to add to.

本発明によれば、第一調整機構によって、第一洗浄機構から被処理体の周縁部の一方の面に加わる押圧力を調整することができ、かつ、第二調整機構によって、第二洗浄機構から被処理体の周縁部の他方の面に加わる押圧力を調整することができる。このため、表面に施されたパターニングを剥がすことなく、裏面に付着したポリマーやパーティクルを確実に除去したり、それぞれの面に応じた押圧力でそれぞれの面に付着したパーティクルを確実に除去したりすることができる。   According to the present invention, the first adjustment mechanism can adjust the pressing force applied from the first cleaning mechanism to one surface of the peripheral edge of the object to be processed, and the second adjustment mechanism can adjust the second cleaning mechanism. The pressing force applied to the other surface of the peripheral edge of the object to be processed can be adjusted. For this reason, without removing the patterning applied to the front surface, the polymer and particles adhering to the back surface can be surely removed, or the particles adhering to each surface can be reliably removed with the pressing force according to each surface. can do.

本発明の実施の形態による処理装置の構成を示す側方断面図。The side sectional view showing the composition of the processing device by an embodiment of the invention. 本発明の実施の形態による処理装置の第一調整機構および第二調整機構の構成を示す側方断面図。Side sectional drawing which shows the structure of the 1st adjustment mechanism of the processing apparatus by embodiment of this invention, and a 2nd adjustment mechanism. 本発明の実施の形態による処理装置の第一洗浄部および第二洗浄部の構成を示す上方断面図。The upper sectional view showing the composition of the 1st washing part and the 2nd washing part of the processing device by an embodiment of the invention. 本発明の実施の形態による処理装置の第二調整機構の駆動態様を示す概略図。Schematic which shows the drive aspect of the 2nd adjustment mechanism of the processing apparatus by embodiment of this invention. 本発明の実施の形態の変形例による処理装置の第一洗浄部および第二洗浄部の構成を示す側方断面図。Side sectional drawing which shows the structure of the 1st washing | cleaning part of the processing apparatus by the modification of embodiment of this invention, and a 2nd washing | cleaning part.

実施の形態
以下、本発明に係る処理装置の実施の形態について、図面を参照して説明する。ここで、図1乃至図5は本発明の実施の形態を示す図である。
Embodiments Hereinafter, embodiments of a processing apparatus according to the present invention will be described with reference to the drawings. Here, FIG. 1 to FIG. 5 are diagrams showing an embodiment of the present invention.

図1に示すように、処理装置は、被処理体である半導体ウエハW(以下、単にウエハWとも言う)を真空吸着によって保持する保持部1と、保持部1の中心から下方に延びた回転軸5と、この回転軸5を回転させることによって保持部1で保持されたウエハWを回転させる回転駆動部60と、保持部1によって保持されたウエハWの周りを囲むカップ70と、ウエハWの周縁部の表面(一方の面)に当接して洗浄する表面洗浄機構(第一洗浄機構)30と、ウエハWの周縁部の裏面(他方の面)に当接して洗浄する裏面洗浄機構(第二洗浄機構)40と、を備えている。   As shown in FIG. 1, the processing apparatus includes a holding unit 1 that holds a semiconductor wafer W (hereinafter, also simply referred to as a wafer W) that is an object to be processed by vacuum suction, and a rotation that extends downward from the center of the holding unit 1. A shaft 5, a rotation driving unit 60 that rotates the rotating shaft 5 to rotate the wafer W held by the holding unit 1, a cup 70 that surrounds the wafer W held by the holding unit 1, and the wafer W A front surface cleaning mechanism (first cleaning mechanism) 30 that contacts and cleans the front surface (one surface) of the peripheral portion of the wafer W, and a back surface cleaning mechanism that contacts and cleans the rear surface (the other surface) of the peripheral portion of the wafer W ( Second cleaning mechanism) 40.

また、図2に示すように、表面洗浄機構30は、第一基端部31と、第一基端部31の下端に設けられ、ウエハWの周縁部の表面に当接可能となったスポンジ状の表面洗浄部(第一洗浄部)32とを有している。この表面洗浄部32は、図3(a)(b)に示すように、横断面の中心部が硬い硬質部32aからなり、この中心部の周りを囲む外周部が硬質部32aよりも軟らかい軟質部32bからなっている。   As shown in FIG. 2, the surface cleaning mechanism 30 is provided with a first base end portion 31 and a lower end of the first base end portion 31, and can be brought into contact with the surface of the peripheral portion of the wafer W. And a surface cleaning part (first cleaning part) 32 in the form of a plate. As shown in FIGS. 3 (a) and 3 (b), the surface cleaning unit 32 is composed of a hard portion 32a having a hard central portion in the cross section, and an outer peripheral portion surrounding the center portion is softer than the hard portion 32a. It consists of part 32b.

また、図2に示すように、裏面洗浄機構40は、第二基端部41と、第二基端部41の上端に設けられ、ウエハWの周縁部の裏面に当接可能となったスポンジ状の裏面洗浄部(第二洗浄部)42とを有している。この裏面洗浄部42は、図3(a)(b)に示すように、横断面の中心部が硬い硬質部42aからなり、この中心部の周りを囲む外周部が硬質部42aよりも軟らかい軟質部42bからなっている。   As shown in FIG. 2, the back surface cleaning mechanism 40 is provided with a second base end portion 41 and an upper end of the second base end portion 41, and can be brought into contact with the back surface of the peripheral portion of the wafer W. The back surface washing | cleaning part (2nd washing | cleaning part) 42 of a shape is provided. As shown in FIGS. 3 (a) and 3 (b), the back surface cleaning portion 42 is composed of a hard portion 42a having a hard central portion in the cross section, and an outer peripheral portion surrounding the central portion is softer than the hard portion 42a. It consists of part 42b.

なお、本実施の形態では、表面洗浄部32と裏面洗浄部42の両方について、その横断面の中心部が硬い硬質部32a,42aからなり、中心部の周りを囲む外周部が硬質部32a,42aよりも軟らかい軟質部32b,42bからなっている態様を用いて説明する。しかしながら、これに限られることなく、表面洗浄部32と裏面洗浄部42のいずれか一方のみが、その横断面の中心部が硬い硬質部32a,42aからなり、中心部の周りを囲む外周部が硬質部32a,42aよりも軟らかい軟質部32b,42bからなっていてもよい。   In the present embodiment, for both the front surface cleaning unit 32 and the rear surface cleaning unit 42, the center portion of the cross section is made of hard hard portions 32a, 42a, and the outer peripheral portion surrounding the center portion is the hard portion 32a, A description will be given using an embodiment composed of soft portions 32b and 42b softer than 42a. However, the present invention is not limited to this, and only one of the front surface cleaning unit 32 and the rear surface cleaning unit 42 is composed of hard portions 32a and 42a having a central portion in the cross section, and an outer peripheral portion surrounding the central portion is provided. You may consist of the soft parts 32b and 42b softer than the hard parts 32a and 42a.

また、図2に示すように、表面洗浄機構30の上端には、内部に電磁石21が配置された筐体24が連結されている。また、この筐体24の上端には、表面洗浄機構30からウエハWの周縁部の表面に加わる押圧力を調整する表面側調整機構(第一調整機構)10が連結されている。   Further, as shown in FIG. 2, a housing 24 having an electromagnet 21 disposed therein is connected to the upper end of the surface cleaning mechanism 30. In addition, a top surface adjustment mechanism (first adjustment mechanism) 10 that adjusts the pressing force applied from the surface cleaning mechanism 30 to the surface of the peripheral portion of the wafer W is connected to the upper end of the housing 24.

この表面側調整機構10は、図2に示すように、円筒状のシリンダ12と、このシリンダ12内で上下方向に移動可能なピストン15と、を有している。また、シリンダ12には、ピストン15の上方側に空気を流入するための上方側流入部11と、ピストン15の下方側に空気を流入するための下方側流入部16とが設けられている。なお、上方側流入部11と下方側流入部16の各々は、空気供給部(図示せず)に連通されている。   As shown in FIG. 2, the surface side adjustment mechanism 10 includes a cylindrical cylinder 12 and a piston 15 that can move in the vertical direction within the cylinder 12. In addition, the cylinder 12 is provided with an upper inflow portion 11 for flowing air into the upper side of the piston 15 and a lower inflow portion 16 for flowing air into the lower side of the piston 15. In addition, each of the upper side inflow part 11 and the lower side inflow part 16 is connected to the air supply part (not shown).

また、図2に示すように、ピストン15の上端には、水平方向に延びた被測定部19が連結されている。また、この被測定部19の下端には、被測定部19から加わる押圧力を測定する測定センサ51が当接されている。また、この測定センサ51には、測定センサ51によって検知された押圧力を出力する出力部52が接続されている。   Further, as shown in FIG. 2, a measured part 19 extending in the horizontal direction is connected to the upper end of the piston 15. Further, a measurement sensor 51 for measuring the pressing force applied from the measured part 19 is brought into contact with the lower end of the measured part 19. The measurement sensor 51 is connected to an output unit 52 that outputs a pressing force detected by the measurement sensor 51.

ここで、上方側流入部11から流入される空気によってピストン15に付与される空気圧と、下方側流入部16から流入される空気によってピストン15に付与される空気圧が調整されることによって、表面洗浄部32からウエハWの周縁部の表面に付与される押圧力が調整される。   Here, the air pressure applied to the piston 15 by the air flowing in from the upper inflow portion 11 and the air pressure applied to the piston 15 by the air flowing in from the lower inflow portion 16 are adjusted, thereby cleaning the surface. The pressing force applied from the portion 32 to the surface of the peripheral portion of the wafer W is adjusted.

また、図2に示すように、裏面洗浄機構40の下端には永久磁石25が連結されている。なお、裏面洗浄機構40に設けられた永久磁石25と、この永久磁石25に磁力を加える電磁石21とによって、裏面側調整機構(第二調整機構)が構成されている。なお、電磁石21に流れる電流の大きさ(電磁石21に加えられる電圧の大きさ)が調整されることによって、裏面洗浄部42からウエハWの周縁部の裏面に付与される押圧力が調整される。   Further, as shown in FIG. 2, a permanent magnet 25 is connected to the lower end of the back surface cleaning mechanism 40. The backside adjustment mechanism (second adjustment mechanism) is configured by the permanent magnet 25 provided in the backside cleaning mechanism 40 and the electromagnet 21 that applies a magnetic force to the permanent magnet 25. The pressing force applied from the back surface cleaning unit 42 to the back surface of the peripheral portion of the wafer W is adjusted by adjusting the magnitude of the current flowing through the electromagnet 21 (the magnitude of the voltage applied to the electromagnet 21). .

ところで、本実施の形態では、裏面側調整機構(電磁石21および永久磁石25)は、表面側調整機構10によって表面洗浄機構30からウエハWの周縁部の表面に加えられる押圧力よりも大きな押圧力を、裏面洗浄機構40からウエハWの周縁部の裏面に加えることもできるし、逆に、表面側調整機構10によって表面洗浄機構30からウエハWの周縁部の表面に加えられる押圧力よりも小さな押圧力を、裏面洗浄機構40からウエハWの周縁部の裏面に加えることもできるように構成されている。   By the way, in the present embodiment, the back side adjustment mechanism (the electromagnet 21 and the permanent magnet 25) has a pressing force larger than the pressing force applied from the surface cleaning mechanism 30 to the surface of the peripheral edge of the wafer W by the front side adjustment mechanism 10. Can be applied from the back surface cleaning mechanism 40 to the back surface of the peripheral portion of the wafer W, and conversely, the pressing force applied to the surface of the peripheral portion of the wafer W from the front surface cleaning mechanism 30 by the front surface adjustment mechanism 10 is smaller. The pressing force can be applied to the back surface of the peripheral portion of the wafer W from the back surface cleaning mechanism 40.

また、図2に示すように、筐体24には、揺動軸45aを中心に揺動可能な連結部材45が設けられている。そして、裏面洗浄機構40は、連結部材45を介して、表面洗浄機構30に連結されている。このため、裏面洗浄機構40は揺動軸45aを中心に揺動可能となり、表面洗浄機構30側(上方側)に揺動されたときに(閉鎖位置にあるときに)、ウエハWの周縁部の裏面に当接するようになっている(図4(c)参照)。   As shown in FIG. 2, the casing 24 is provided with a connecting member 45 that can swing around a swing shaft 45a. The back surface cleaning mechanism 40 is connected to the front surface cleaning mechanism 30 via a connecting member 45. Therefore, the back surface cleaning mechanism 40 can swing about the swing shaft 45a, and when it is swung to the front surface cleaning mechanism 30 side (upper side) (when in the closed position), the peripheral edge portion of the wafer W (See FIG. 4C).

また、図1に示すように、表面洗浄機構30には、筐体24および表面側調整機構10を介して、表面洗浄機構30と裏面洗浄機構40を一体に上下方向(ウエハWの表面から裏面に向かう方向)に移動させる洗浄部移動機構55が連結されている。   As shown in FIG. 1, the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are integrated into the front surface cleaning mechanism 30 via the housing 24 and the front surface side adjustment mechanism 10 in the vertical direction (from the front surface of the wafer W to the back surface). The cleaning unit moving mechanism 55 is connected to move in the direction toward the head.

また、図1に示すように、回転駆動部60は、回転軸5の周縁外方に配置されたプーリ62と、このプーリ62に巻きかけられた駆動ベルト63と、この駆動ベルト63に駆動力を付与することによって、プーリ62を介して回転軸5を回転させるモータ61とを有している。また、回転軸5の周縁外方にはベアリング66が配置されている。また、回転軸5には、この回転軸5を上下方向に移動させることによって、保持部1を上下方向に移動させる保持部移動機構65が連結されている。   Further, as shown in FIG. 1, the rotation driving unit 60 includes a pulley 62 disposed on the outer periphery of the rotating shaft 5, a driving belt 63 wound around the pulley 62, and a driving force applied to the driving belt 63. And a motor 61 that rotates the rotary shaft 5 via the pulley 62. Further, a bearing 66 is disposed on the outer periphery of the rotating shaft 5. The rotating shaft 5 is connected to a holding unit moving mechanism 65 that moves the holding unit 1 in the vertical direction by moving the rotary shaft 5 in the vertical direction.

また、図1に示すように、処理装置は、ウエハWに処理液を供給する処理液供給部75を備えている。そして、ウエハWの表面側には、処理液供給部75に連結され、この処理液供給部75から供給される処理液をウエハWの表面に供給する表面側供給ノズル71が設けられている。また、ウエハWの裏面側には、処理液供給部75に連結され、この処理液供給部75から供給される処理液をウエハWの裏面に供給する裏面側供給ノズル72が設けられている。   In addition, as shown in FIG. 1, the processing apparatus includes a processing liquid supply unit 75 that supplies a processing liquid to the wafer W. On the front side of the wafer W, a front side supply nozzle 71 that is connected to the processing liquid supply unit 75 and supplies the processing liquid supplied from the processing liquid supply unit 75 to the surface of the wafer W is provided. Further, on the back surface side of the wafer W, a back surface side supply nozzle 72 that is connected to the processing liquid supply unit 75 and supplies the processing liquid supplied from the processing liquid supply unit 75 to the back surface of the wafer W is provided.

なお、本願で処理液とは、薬液や純水のことを意味している。そして、薬液としては、例えば、希フッ酸などを用いることができる。   In the present application, the treatment liquid means a chemical solution or pure water. And as a chemical | medical solution, dilute hydrofluoric acid etc. can be used, for example.

次に、このような構成からなる本実施の形態の作用について述べる。   Next, the operation of the present embodiment having such a configuration will be described.

まず、搬送ロボット(図示せず)によって、キャリア(図示せず)から取り出されたウエハWが、保持部移動機構65により受け渡し位置(上方位置)に位置づけられた保持部1上に載置される(保持工程)。   First, the wafer W taken out from the carrier (not shown) by the transfer robot (not shown) is placed on the holding unit 1 positioned at the transfer position (upper position) by the holding unit moving mechanism 65. (Holding step).

次に、保持部移動機構65によって、保持部1が下方に移動させられて下方位置に位置づけられる(図1参照)。   Next, the holding part moving mechanism 65 moves the holding part 1 downward and positions it at a lower position (see FIG. 1).

次に、洗浄部移動機構55によって、表面洗浄機構30と裏面洗浄機構40とが一体となって下方へ移動させられる(図1および図4(a)参照)。このとき、裏面洗浄機構40の裏面洗浄部42は、表面洗浄機構30側とは反対側(下方側)に揺動されて、開放位置に位置づけられている(図4(a)参照)。   Next, the front surface cleaning mechanism 30 and the rear surface cleaning mechanism 40 are moved together by the cleaning unit moving mechanism 55 (see FIGS. 1 and 4A). At this time, the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is swung to the opposite side (downward side) from the front surface cleaning mechanism 30 side and is positioned in the open position (see FIG. 4A).

このように、本実施の形態によれば、裏面洗浄機構40の裏面洗浄部42を開放位置に位置づけたまま、裏面洗浄機構40の裏面洗浄部42をウエハWの裏面側に位置づけることができる(図4(a)(b)参照)。このため、ウエハWの周りを囲むカップ70の大きさを小さくすることができ、かつ、裏面洗浄部42をウエハWの周縁部の裏面に容易かつ迅速に当接させることができる。   Thus, according to the present embodiment, the back surface cleaning unit 42 of the back surface cleaning mechanism 40 can be positioned on the back surface side of the wafer W while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned in the open position ( (Refer FIG. 4 (a) (b)). Therefore, the size of the cup 70 surrounding the wafer W can be reduced, and the back surface cleaning unit 42 can be easily and quickly brought into contact with the back surface of the peripheral portion of the wafer W.

すなわち、特許文献1のように、第1基板洗浄ブラシ(表面洗浄部32’)および第2基板洗浄ブラシ(裏面洗浄部42’)を、互いに接近および離間させるものであれば、保持部1で保持されたウエハWとカップ70との間に、第1基板洗浄ブラシ(表面洗浄部32’)および第2基板洗浄ブラシ(裏面洗浄部42’)を通過させるだけの間隙を設ける必要がある(図1の70’で示された点線参照)。このため、保持部1によって保持されたウエハWの周りを囲むカップ70の大きさが大きくなる。   That is, as in Patent Document 1, if the first substrate cleaning brush (front surface cleaning unit 32 ′) and the second substrate cleaning brush (back surface cleaning unit 42 ′) are made to approach and separate from each other, the holding unit 1 It is necessary to provide a gap between the held wafer W and the cup 70 so as to allow the first substrate cleaning brush (front surface cleaning unit 32 ′) and the second substrate cleaning brush (back surface cleaning unit 42 ′) to pass ( (See the dotted line 70 'in FIG. 1). For this reason, the size of the cup 70 surrounding the wafer W held by the holding unit 1 is increased.

これに対して、本実施の形態によれば、裏面洗浄機構40の裏面洗浄部42を開放位置に位置づけたまま、裏面洗浄機構40を下方へ移動させるだけで、裏面洗浄機構40の裏面洗浄部42をウエハWの裏面側へ移動させることができる(図1の実線矢印、参照)。
このため、保持部1で保持されたウエハWとカップ70との間に、裏面洗浄部42を通過させるための間隙を設ける必要がない。この結果、ウエハWの周りを囲むカップ70の大きさを小さくすることができる。
On the other hand, according to the present embodiment, the back surface cleaning unit of the back surface cleaning mechanism 40 can be simply moved downward while the back surface cleaning unit 42 of the back surface cleaning mechanism 40 is positioned at the open position. 42 can be moved to the back side of the wafer W (see solid line arrow in FIG. 1).
For this reason, it is not necessary to provide a gap for allowing the back surface cleaning unit 42 to pass between the wafer W held by the holding unit 1 and the cup 70. As a result, the size of the cup 70 surrounding the wafer W can be reduced.

また、特許文献1に記載されたような従来のものであれば、裏面洗浄部42をウエハWの裏面の周縁部に当接させる際に、第2基板洗浄ブラシ(裏面洗浄部42’)をウエハWの裏面側に位置づけた後に、ウエハWの周縁部に向かって水平方向に移動させる必要があるのに対して(図1の点線矢印、参照)、本実施の形態によれば、裏面洗浄機構40を下方へ移動させるだけでよい(図1の実線矢印、参照)。このため、裏面洗浄部42をウエハWの裏面の周縁部に当接させるまでの工程数を削減することができ(水平方向の移動工程を削減することができ)、裏面洗浄部42をウエハWの周縁部の裏面に容易かつ迅速に当接させることができる。   Further, in the case of the conventional one described in Patent Document 1, when the back surface cleaning unit 42 is brought into contact with the peripheral edge of the back surface of the wafer W, the second substrate cleaning brush (back surface cleaning unit 42 ′) is used. Although the wafer W needs to be moved in the horizontal direction toward the periphery of the wafer W after being positioned on the back surface side of the wafer W (see the dotted arrow in FIG. 1), according to the present embodiment, the back surface cleaning is performed. It is only necessary to move the mechanism 40 downward (see solid arrow in FIG. 1). For this reason, the number of steps until the back surface cleaning unit 42 is brought into contact with the peripheral edge of the back surface of the wafer W can be reduced (the number of horizontal movement steps can be reduced). Can be brought into contact with the rear surface of the peripheral edge easily and quickly.

次に、回転駆動部60により回転軸5が回転駆動されることによって、保持部11で保持されたウエハWが回転される(回転工程)(図1参照)。このとき、モータ61から駆動ベルト63を介してプーリ62に駆動力が付与されることによって、回転軸5が回転駆動される。   Next, the rotation shaft 5 is rotationally driven by the rotation driving unit 60, whereby the wafer W held by the holding unit 11 is rotated (rotation process) (see FIG. 1). At this time, a driving force is applied from the motor 61 to the pulley 62 via the driving belt 63, whereby the rotating shaft 5 is driven to rotate.

次に、表面側供給ノズル71によって、処理液供給部75から供給された処理液がウエハWの表面に供給され始める。また、同様に、裏面側供給ノズル72によって、処理液供給部75から供給された処理液がウエハWの裏面に供給され始める(処理液供給工程)(図1参照)。なお、以下の工程は、このように表面側供給ノズル71と裏面側供給ノズル72から、ウエハWの周縁部に処理液が供給されている間に行われる。   Next, the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the surface of the wafer W by the front side supply nozzle 71. Similarly, the processing liquid supplied from the processing liquid supply unit 75 starts to be supplied to the back surface of the wafer W by the back surface side supply nozzle 72 (processing liquid supply process) (see FIG. 1). The following steps are performed while the processing liquid is supplied to the peripheral edge of the wafer W from the front-side supply nozzle 71 and the back-side supply nozzle 72 as described above.

このように表面側供給ノズル71および裏面側供給ノズル72から処理液が供給されるときに、表面洗浄機構30の表面洗浄部32がウエハWの表面に当接される(図4(b)参照)。その後、筐体24内の電磁石21に電流が流され(図4(c)の矢印、参照)、裏面洗浄機構40の下端に設けられた永久磁石25に、この電磁石21から加えられる磁力が働く。この結果、裏面洗浄機構40の裏面洗浄部42が揺動軸45aを中心に揺動され、閉鎖位置に位置づけられて、裏面洗浄部42がウエハWの裏面に当接される(図4(c)参照)。   Thus, when the processing liquid is supplied from the front side supply nozzle 71 and the back side supply nozzle 72, the front surface cleaning unit 32 of the front surface cleaning mechanism 30 is brought into contact with the surface of the wafer W (see FIG. 4B). ). Thereafter, a current is passed through the electromagnet 21 in the casing 24 (see the arrow in FIG. 4C), and the magnetic force applied from the electromagnet 21 acts on the permanent magnet 25 provided at the lower end of the back surface cleaning mechanism 40. . As a result, the back surface cleaning section 42 of the back surface cleaning mechanism 40 is swung around the swing shaft 45a and positioned at the closed position, and the back surface cleaning section 42 is brought into contact with the back surface of the wafer W (FIG. 4C). )reference).

このとき、電磁石21に流れる電流の大きさ(電磁石21に加えられる電圧の大きさ)を調整することによって、裏面洗浄部42からウエハWの周縁部の裏面に付与される押圧力を調整することができる。   At this time, by adjusting the magnitude of the current flowing through the electromagnet 21 (the magnitude of the voltage applied to the electromagnet 21), the pressing force applied to the back surface of the peripheral edge of the wafer W from the back surface cleaning unit 42 is adjusted. Can do.

また、上方側流入部11から流入される空気による空気圧と、下方側流入部16から流入される空気による空気圧とを調整することによって、表面洗浄部32からウエハWの周縁部の表面に付与される押圧力を調整することができる(図2参照)。なお、この押圧力は、測定センサ51によって検知され、出力部52によって出力される。   Further, by adjusting the air pressure due to the air flowing in from the upper inflow portion 11 and the air pressure due to the air flowing in from the lower inflow portion 16, it is applied from the surface cleaning portion 32 to the surface of the peripheral portion of the wafer W. The pressing force can be adjusted (see FIG. 2). The pressing force is detected by the measurement sensor 51 and output by the output unit 52.

上述のように、本実施の形態によれば、表面洗浄機構30からウエハWの周縁部の表面に加わる押圧力を調整することができ、かつ、裏面洗浄機構(電磁石21および永久磁石25)40からウエハWの周縁部の裏面に加わる押圧力を調整することができる。このため、ウエハWの表面を弱い力で洗浄し、かつ、ウエハWの裏面を強い力で洗浄することができるし、逆に、ウエハWの裏面を弱い力で洗浄し、かつ、ウエハWの表面を強い力で洗浄することもできる。   As described above, according to the present embodiment, the pressing force applied from the front surface cleaning mechanism 30 to the surface of the peripheral portion of the wafer W can be adjusted, and the rear surface cleaning mechanism (the electromagnet 21 and the permanent magnet 25) 40. The pressing force applied to the back surface of the peripheral edge of the wafer W can be adjusted. Therefore, the front surface of the wafer W can be cleaned with a weak force, and the back surface of the wafer W can be cleaned with a strong force. Conversely, the back surface of the wafer W can be cleaned with a weak force, and The surface can be cleaned with a strong force.

このため、ウエハWの裏面に除去しにくいポリマーやパーティクルが付着した場合には、ウエハWの表面を弱い力で洗浄し、かつ、ウエハWの裏面を強い力で洗浄することによって、ウエハWの表面に施されたパターニングを剥がすことなく、ウエハWの裏面に付着したポリマーやパーティクルを確実に除去することができる。   For this reason, when a polymer or particles that are difficult to remove adhere to the back surface of the wafer W, the surface of the wafer W is cleaned with a weak force and the back surface of the wafer W is cleaned with a strong force. The polymer and particles adhering to the back surface of the wafer W can be reliably removed without removing the patterning applied to the front surface.

この結果、本実施の形態によれば、以下に例示するような効果を奏することができる。   As a result, according to the present embodiment, the following effects can be obtained.

まず、ウエハWを搬送するときに搬送ロボット(図示せず)のアームとウエハWとの間に、周縁部に残っていたパーティクルが挟まってしまうことが無くなるので、パーティクルによって、ウエハWの表面や裏面が剥離されてしまうことを防止することができる。   First, when the wafer W is transferred, particles remaining on the peripheral edge are not caught between the arm of the transfer robot (not shown) and the wafer W. It is possible to prevent the back surface from being peeled off.

また、ウエハWをキャリア(図示せず)内に戻した後で、キャリア内でウエハWの周縁部に付着していたパーティクルが落ちてしまうことが無くなるので、キャリア内の他のウエハWを汚してしまうことを防止することができる。   Further, after the wafer W is returned into the carrier (not shown), the particles adhering to the peripheral portion of the wafer W in the carrier are not dropped, so that other wafers W in the carrier are soiled. Can be prevented.

さらに、ウエハWを露光して処理する際にウエハW上に溜められた水にパーティクルが浮遊することが無くなるので、この水の屈折率を均一に保つことができ、ウエハWを正確に露光して処理することができる。   Furthermore, since the particles do not float in the water accumulated on the wafer W when the wafer W is exposed and processed, the refractive index of the water can be kept uniform, and the wafer W can be exposed accurately. Can be processed.

また、表面洗浄部32と裏面洗浄部42は、横断面の中心部が硬い硬質部32a,42aからなり、この中心部の周りを囲む外周部が硬質部32a,42aよりも軟らかい軟質部32b,42bからなっている(図3(a)(b)参照)。このため、図3(b)に示すように、ウエハWの周縁部の側端面(APEX部)を硬質部32a,42aに当接させるとともに、軟質部32b,42bによってウエハWの周縁部の表面および裏面(ベベル部)を挟むことができる。   Further, the front surface cleaning unit 32 and the back surface cleaning unit 42 are composed of hard portions 32a and 42a having a central portion in a cross section, and the outer peripheral portion surrounding the center portion is softer than the hard portions 32a and 42a. 42b (see FIGS. 3A and 3B). For this reason, as shown in FIG. 3B, the side end surface (APEX portion) of the peripheral portion of the wafer W is brought into contact with the hard portions 32a and 42a, and the surface of the peripheral portion of the wafer W is formed by the soft portions 32b and 42b. And a back surface (bevel part) can be pinched | interposed.

この結果、パターニングが施されることのないウエハWの周縁部の側端面(APEX部)を(ウエハWの周縁部の表面および裏面(ベベル部)よりも)強い力で洗浄することができる。   As a result, the side end face (APEX part) of the peripheral part of the wafer W that is not subjected to patterning can be cleaned with a stronger force (than the front and back surfaces (bevel part) of the peripheral part of the wafer W).

ところで、本実施の形態において、表面側供給ノズル71からウエハWの表面に供給される処理液と、裏面側供給ノズル72からウエハWの裏面に供給される処理液を、適宜変更することができる(図1参照)。例えば、表面側供給ノズル71と裏面側供給ノズル72から、最初に薬液が供給され、次にリンス液が供給され、最後に乾燥液が供給されるようにすることができる。なお、表面側供給ノズル71からウエハWの表面に供給される処理液の種類と、裏面側供給ノズル72からウエハWの裏面に供給される処理液の種類とを、独立して変えることもできる。   By the way, in the present embodiment, the processing liquid supplied from the front surface side supply nozzle 71 to the front surface of the wafer W and the processing liquid supplied from the back surface side supply nozzle 72 to the back surface of the wafer W can be appropriately changed. (See FIG. 1). For example, the chemical liquid may be supplied first from the front surface side supply nozzle 71 and the back surface side supply nozzle 72, then the rinse liquid may be supplied, and finally the dry liquid may be supplied. The type of processing liquid supplied from the front surface side supply nozzle 71 to the front surface of the wafer W and the type of processing liquid supplied from the back surface side supply nozzle 72 to the back surface of the wafer W can be changed independently. .

上述のような処理液によるウエハWの周縁部の所定の処理が終了すると、表面側供給ノズル71と裏面側供給ノズル72からの処理液の供給が停止される。このとき、筐体24内の電磁石21に流れている電流が停止され(または、筐体24内の電磁石21に逆方向で電流が流され)、裏面洗浄部42が揺動軸45aを中心に下方側に揺動され、開放位置に位置づけられる。その後、洗浄部移動機構55によって、表面洗浄機構30と裏面洗浄機構40とが一体となって上方へ移動させられる。   When the predetermined processing of the peripheral portion of the wafer W with the processing liquid as described above is completed, the supply of the processing liquid from the front surface side supply nozzle 71 and the back surface side supply nozzle 72 is stopped. At this time, the current flowing through the electromagnet 21 in the housing 24 is stopped (or current is passed through the electromagnet 21 in the housing 24 in the reverse direction), and the back surface cleaning unit 42 is centered on the swing shaft 45a. It swings downward and is positioned in the open position. Thereafter, the cleaning unit moving mechanism 55 moves the front surface cleaning mechanism 30 and the back surface cleaning mechanism 40 together to move upward.

このとき、裏面洗浄機構40を(ウエハWの周縁方向外方に移動させることなく)上方へ移動させるだけで、裏面洗浄部42をウエハWの裏面側から表面側へ移動させることができるので、裏面洗浄部42を容易かつ迅速に移動させることができる。   At this time, the back surface cleaning unit 42 can be moved from the back surface side to the front surface side of the wafer W only by moving the back surface cleaning mechanism 40 upward (without moving it outward in the peripheral direction of the wafer W). The back surface cleaning unit 42 can be moved easily and quickly.

次に、回転駆動部60によってウエハWが高速に回転され、ウエハWの周縁部が乾燥される。その後、回転駆動機構60のモータ61が停止され、保持部1によって保持されているウエハWの回転も停止される。   Next, the wafer W is rotated at a high speed by the rotation driving unit 60, and the peripheral portion of the wafer W is dried. Thereafter, the motor 61 of the rotation drive mechanism 60 is stopped, and the rotation of the wafer W held by the holding unit 1 is also stopped.

次に、保持部移動機構65によって、保持部1が上方に移動させられて受け渡し位置(上方位置)に位置づけられる。   Next, the holding part moving mechanism 65 moves the holding part 1 upward and positions it at the delivery position (upper position).

次に、搬送ロボット(図示せず)によって、保持部1上からウエハWが除去される。   Next, the wafer W is removed from the holding unit 1 by a transfer robot (not shown).

ところで、上記では、電磁石21を収容する筐体24が表面洗浄機構30に連結され、この表面洗浄機構30に、裏面洗浄機構40の裏面洗浄部42が揺動軸45aを中心に揺動可能に連結されている態様を用いて説明した(図2参照)。   By the way, in the above, the housing 24 that accommodates the electromagnet 21 is connected to the surface cleaning mechanism 30, and the back surface cleaning unit 42 of the back surface cleaning mechanism 40 can swing around the swing shaft 45 a. It demonstrated using the aspect connected (refer FIG. 2).

しかしながら、これに限られることなく、図5に示すように、電磁石21を収容する筐体24が、第二基端部41の下端に設けられた永久磁石25の下方に配置され、第二基端部41と裏面洗浄部42とを上下方向に案内する案内溝44aを有する案内部44が配置され、裏面洗浄部42が上下方向に移動可能となっていてもよい。なお、この場合には、表面洗浄機構30は、(筐体24を介することなく)直接、表面側調整機構10に連結されている。   However, the present invention is not limited to this, and as shown in FIG. 5, the casing 24 that houses the electromagnet 21 is disposed below the permanent magnet 25 provided at the lower end of the second base end portion 41, and the second base A guide portion 44 having a guide groove 44a for guiding the end portion 41 and the back surface cleaning portion 42 in the vertical direction may be disposed, and the back surface cleaning portion 42 may be movable in the vertical direction. In this case, the surface cleaning mechanism 30 is directly connected to the surface-side adjustment mechanism 10 (without going through the housing 24).

このような態様によっても、やはり、表面洗浄機構30からウエハWの周縁部の表面に加わる押圧力を調整することができ、かつ、裏面洗浄機構40からウエハWの周縁部の裏面に加わる押圧力を調整することができる。このため、ウエハWの周縁部の洗浄を確実に行うことができ、ウエハWの周縁部からパーティクルを確実に除去することができる。   Also according to such an aspect, the pressing force applied from the front surface cleaning mechanism 30 to the surface of the peripheral portion of the wafer W can be adjusted, and the pressing force applied from the back surface cleaning mechanism 40 to the rear surface of the peripheral portion of the wafer W is adjusted. Can be adjusted. For this reason, the peripheral portion of the wafer W can be reliably cleaned, and particles can be reliably removed from the peripheral portion of the wafer W.

1 保持部
10 表面側調整機構(第一調整機構)
21 電磁石
25 永久磁石
30 表面洗浄機構(第一洗浄機構)
32 表面洗浄部(第一洗浄部)
32a 硬質部
32b 軟質部
40 裏面洗浄機構(第二洗浄機構)
42 裏面洗浄部(第二洗浄部)
42a 硬質部
42b 軟質部
45a 揺動軸
55 洗浄部移動機構(移動機構)
60 回転駆動部
65 保持部移動機構
70 カップ
W ウエハ(被処理体)
1 holding part 10 surface side adjustment mechanism (first adjustment mechanism)
21 Electromagnet 25 Permanent magnet 30 Surface cleaning mechanism (first cleaning mechanism)
32 Surface cleaning section (first cleaning section)
32a Hard part 32b Soft part 40 Back surface cleaning mechanism (second cleaning mechanism)
42 Back surface cleaning section (second cleaning section)
42a Hard part 42b Soft part 45a Oscillating shaft 55 Cleaning part moving mechanism (moving mechanism)
60 Rotation Drive Unit 65 Holding Unit Movement Mechanism 70 Cup W Wafer (Subject)

Claims (7)

被処理体を保持する保持部と、
前記保持部によって保持された前記被処理体を回転させる回転駆動部と、
前記被処理体の周縁部の一方の面に当接して洗浄する第一洗浄機構と、
前記被処理体の前記周縁部の他方の面に当接して洗浄する第二洗浄機構と、
前記第一洗浄機構から前記周縁部の一方の面に加わる押圧力を調整する第一調整機構と、
前記第二洗浄機構から前記周縁部の他方の面に加わる押圧力を調整する第二調整機構と、
を備え、
前記第二洗浄機構は、前記周縁部の他方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第二洗浄部を有し、
前記被処理体の前記周縁部を洗浄する際、前記硬質部は前記周縁部の側端面に当接し、前記軟質部は前記周縁部の前記他方の面に当接することを特徴とする処理装置。
A holding unit for holding the object to be processed;
A rotation driving unit that rotates the object to be processed held by the holding unit;
A first cleaning mechanism for cleaning in contact with one surface of the peripheral edge of the workpiece;
A second cleaning mechanism for cleaning in contact with the other surface of the peripheral edge of the workpiece;
A first adjustment mechanism that adjusts the pressing force applied to one surface of the peripheral edge from the first cleaning mechanism;
A second adjustment mechanism for adjusting the pressing force applied to the other surface of the peripheral edge from the second cleaning mechanism;
With
The second cleaning mechanism is capable of abutting against the other surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion A second cleaning section consisting of
When cleaning the peripheral portion of the object to be processed, the hard portion is in contact with a side end surface of the peripheral portion, and the soft portion is in contact with the other surface of the peripheral portion.
前記第二調整機構は、前記第二洗浄機構に設けられた永久磁石と、該永久磁石に磁力を加えることによって前記周縁部の他方の面に加わる押圧力を調整する電磁石と、を有することを特徴とする請求項1に記載の処理装置。   The second adjustment mechanism includes a permanent magnet provided in the second cleaning mechanism, and an electromagnet that adjusts a pressing force applied to the other surface of the peripheral portion by applying a magnetic force to the permanent magnet. The processing apparatus according to claim 1, characterized in that: 前記第一洗浄機構は、前記周縁部の一方の面に当接可能であり、横断面の中心部が硬質部からなり、該中心部の周りを囲む外周部が該硬質部よりも軟らかい軟質部からなる第一洗浄部を有することを特徴とする請求項1または2のいずれか1項に記載の処理装置。   The first cleaning mechanism is capable of abutting against one surface of the peripheral portion, the central portion of the cross section is a hard portion, and the outer peripheral portion surrounding the central portion is a soft portion that is softer than the hard portion The processing apparatus according to claim 1, further comprising a first cleaning unit made of 前記第一洗浄機構に連結され、該第一洗浄機構および前記第二洗浄機構を前記被処理体の一方の面から他方の面に向かう方向に移動させる移動機構をさらに備えたことを特徴とする請求項1乃至3のいずれか1項に記載の処理装置。   And a moving mechanism that is connected to the first cleaning mechanism and moves the first cleaning mechanism and the second cleaning mechanism in a direction from one surface of the object to be processed to the other surface. The processing apparatus according to any one of claims 1 to 3. 前記第二洗浄機構は、前記第一洗浄機構に連結されるとともに、揺動軸を中心に揺動可能となり、該第一洗浄機構側に揺動されたときに前記周縁部の前記他方の面に当接することを特徴とする請求項1乃至4のいずれか1項に記載の処理装置。   The second cleaning mechanism is connected to the first cleaning mechanism, and is swingable about a swing shaft. When the second cleaning mechanism is swung toward the first cleaning mechanism, the other surface of the peripheral portion is The processing apparatus according to claim 1, wherein the processing apparatus is in contact with the processing apparatus. 前記第二洗浄機構は、前記第一洗浄機構が前記周縁部の前記一方の面に当接した後に、前記揺動軸を中心に該第一洗浄機構側に揺動されて該周縁部の前記他方の面に当接することを特徴とする請求項5に記載の処理装置。   The second cleaning mechanism is swung toward the first cleaning mechanism around the swing shaft after the first cleaning mechanism abuts on the one surface of the peripheral edge, and the second cleaning mechanism The processing apparatus according to claim 5, wherein the processing apparatus is in contact with the other surface. 前記第二調整機構は、第一調整機構によって前記第一洗浄機構から前記周縁部の一方の面に加えられる押圧力よりも大きな押圧力を、前記第二洗浄機構から前記周縁部の他方の面に加えることを特徴とする請求項1乃至6のいずれか1項に記載の処理装置。   The second adjusting mechanism applies a pressing force larger than the pressing force applied from the first cleaning mechanism to the one surface of the peripheral portion by the first adjusting mechanism, and the other surface of the peripheral portion from the second cleaning mechanism. The processing apparatus according to claim 1, wherein the processing apparatus is added to the processing apparatus.
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JP2005079216A (en) * 2003-08-29 2005-03-24 Ebara Corp Substrate-cleaning equipment, initialization method of cleaning member thereof, and substrate-polishing and cleaning system
JP2007157936A (en) * 2005-12-02 2007-06-21 Dainippon Screen Mfg Co Ltd Substrate processing device, and substrate processing method
JP2007273611A (en) * 2006-03-30 2007-10-18 Sony Corp Apparatus and method for processing substrate
JP2007305755A (en) * 2006-05-11 2007-11-22 Renesas Technology Corp Method of manufacturing semiconductor device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209094A (en) * 1996-11-19 1998-08-07 Tokyo Electron Ltd Cleaning apparatus and method
JPH11176790A (en) * 1997-12-12 1999-07-02 Tokyo Electron Ltd Cleaning system
JPH11354479A (en) * 1998-06-05 1999-12-24 Toshiba Mach Co Ltd Spin washing device
JP2001009387A (en) * 1999-06-29 2001-01-16 Dainippon Screen Mfg Co Ltd Substrate washing apparatus
JP2005079216A (en) * 2003-08-29 2005-03-24 Ebara Corp Substrate-cleaning equipment, initialization method of cleaning member thereof, and substrate-polishing and cleaning system
JP2007157936A (en) * 2005-12-02 2007-06-21 Dainippon Screen Mfg Co Ltd Substrate processing device, and substrate processing method
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