TWI763765B - Substrate polishing apparatus and polishing method - Google Patents

Abstract

The present invention provides a polishing device in which a polishing member can maintain a good state during polishing, which is a polishing device for partially polishing a substrate. The polishing device has: a polishing member whose processing surface contacting the substrate is smaller than that of the substrate; Adjustment member of the polishing member; first pressing mechanism for pressing the adjustment member to the polishing member during substrate polishing; and control device for controlling the operation of the polishing device; the control device is configured to partially polish the polishing member When the substrate is placed, the aforementioned first pressing mechanism is controlled.

Description

Substrate polishing apparatus and polishing method

The present invention relates to a polishing apparatus and polishing method for a substrate.

In recent years, processing apparatuses have been used in order to perform various processes on objects to be processed (eg, substrates such as semiconductor substrates, or various films formed on the surfaces of the substrates). As an example of a processing apparatus, the CMP (Chemical Mechanical Polishing) apparatus for performing polishing processing etc. of a processing object is mentioned.

The CMP apparatus includes: a polishing unit for performing a polishing process on the object to be processed; a cleaning unit for performing a cleaning process and a drying process for the object to be processed; and sending the object to be processed to the polishing unit and receiving the cleaning process. The cleaning unit is a loading/unloading unit for the object to be processed after cleaning and drying. In addition, the CMP apparatus further includes a conveying mechanism for conveying the object to be processed in the polishing unit, the cleaning unit, and the loading/unloading unit. The CMP apparatus conveys the object to be processed by the conveying mechanism, and performs various processes such as polishing, cleaning, and drying in sequence.

Recently, the precision required for each process in the manufacture of semiconductor elements has reached the order of several nanometers, and CMP is no exception. CMP optimizes polishing and cleaning conditions in order to satisfy this requirement. However, even if the optimum conditions are determined, the polishing and cleaning performance cannot be prevented from changing due to control deviations of components and changes in consumables over time. In addition, there are variations in the semiconductor substrates to be processed, such as The film thickness and device shape of the film formed on the object to be processed before CMP vary. Such deviations in CMP and after CMP result in incomplete removal of deviation and level difference of the residual film, and even in the film that should be completely removed by polishing, it is highlighted in the form of film residue. Such variation occurs in the form of wafer-to-wafer and across wafers within the substrate plane, and even occurs between substrates and batches. The current processing method for suppressing these deviations within a certain threshold value is to control the polishing conditions (such as the pressure distribution in the substrate surface during polishing, the number of revolutions of the substrate holding stage) for the substrate being polished and the substrate before polishing. , slurry), and/or secondary processing (regrinding) of substrates exceeding the threshold value.

However, the above-mentioned effect of suppressing the variation according to the polishing conditions is mainly manifested in the radial direction of the substrate, so it is difficult to adjust the variation in the circumferential direction of the substrate. Furthermore, depending on the processing conditions at the time of CMP and the state of the lower layer of the film polished by CMP, a localized variation in the amount of polishing may also occur in the substrate surface. In addition, regarding the control of the polishing distribution in the radial direction of the substrate in the CMP process, from the viewpoint of recent yield improvement, the device area within the substrate surface needs to be enlarged, and the polishing distribution needs to be adjusted to the edge of the substrate. The edge portion of the substrate is more affected by the variation of the polishing pressure distribution and the inflow of the slurry of the polishing material than near the center of the substrate. Control of polishing conditions and cleaning conditions and secondary processing are basically performed in a polishing unit that implements CMP. At this time, the polishing pad is in contact with the substrate surface almost entirely, but even if it is partially in contact, it is necessary to increase the contact area between the polishing pad and the substrate from the viewpoint of maintaining the processing speed. In this case, for example, in a specific area of the substrate surface, even if there is a deviation exceeding the threshold value, if it is corrected by secondary processing, etc., due to the size of the contact area, even the part that does not require secondary processing will still be damaged. Carry out grinding. As a result, it is difficult to correct to the originally required threshold value range. Therefore, there is a need to provide a method and apparatus capable of controlling the polishing and cleaning state of a smaller area, and performing control of processing conditions and reprocessing of secondary processing for any position on the substrate surface.

FIG. 15 is a schematic configuration diagram showing an example of a partial polishing apparatus 1000 that performs polishing processing using a polishing pad having a diameter smaller than that of the object to be processed. In the partial polishing apparatus 1000 shown in FIG. 15, a polishing pad 502 having a diameter smaller than that of the substrate Wf of the object to be processed is used. As shown in FIG. 15, a partial polishing apparatus 1000 includes: a stage 400 on which a substrate Wf is placed; a polishing head 500 on which a polishing pad 502 for processing the processing surface of the substrate Wf is mounted; and a holding arm 600 for holding the polishing head 500 ; a treatment liquid supply system 700 for supplying a treatment liquid; and an adjustment part 800 for adjusting (shaping) the polishing pad 502 . Part of the overall operation of the polishing device 1000 is controlled by the control device 900 . The partial polishing apparatus shown in FIG. 15 can supply DIW (pure water), cleaning chemicals, and polishing liquid of slurry to the substrate from the processing liquid supply system 700, and rotate and press the polishing pad 502 against the substrate. , to locally grind the substrate.

As shown in FIG. 15, the size of the polishing pad 502 is smaller than that of the substrate Wf. Here, the diameter Φ of the polishing pad 502 is equal to or smaller than the variation region of the film thickness and shape of the object to be processed. For example, the diameter Φ of the polishing pad 502 is less than 50mm, or Φ10-30mm. Since the larger the diameter of the polishing pad 502, the smaller the area ratio to the substrate, the polishing speed of the substrate increases. In addition, regarding the polishing accuracy of the desired treatment area, the smaller the diameter of the polishing pad, the higher the accuracy. This is because the smaller the diameter of the polishing pad, the smaller the unit processing area.

In the partial polishing apparatus 1000 shown in FIG. 15, when the substrate Wf is partially polished, the polishing pad 502 is rotated around the rotating shaft 502A, and the polishing pad 502 is pressed against the substrate Wf. At this time, the holding arm 600 may be oscillated in the radial direction of the substrate Wf. In addition, the stage 400 may be rotated around the rotation axis 400A. Moreover, the adjustment part 800 is provided with the dressing stage 810 which holds the dresser 820. The trimming stage 810 can be rotated around the rotation axis 810A. In the partial polishing apparatus 1000 of FIG. 15, the polishing pad 502 can be adjusted by pressing the polishing pad 502 against the dresser 820 and rotating the polishing pad 502 and the dresser 820. In the part of the grinding device 1000 shown in FIG. 15, the load is controlled by the control device 900. The rotation speed of the table 400, the rotation speed of the polishing pad 502, the pressing force of the polishing pad 502, the shaking speed of the holding arm 600, the supply of the processing liquid from the processing liquid supply system 700, and the processing time, etc., can partially polish the surface on the substrate Wf. any area.

[Prior Art Literature]

[Patent Document 1] US Patent Application Publication No. 2015/0352686

Generally, when a polishing member such as a polishing pad is pressed against the substrate to polish the substrate, fine particles in the polishing liquid and fine particles that cut the substrate will adhere to the polishing member and cause clogging. When the polishing member is clogged, the polishing rate and its distribution in the plane of the substrate Wf change. Therefore, in order to eliminate the clogging of the grinding member and keep the grinding member in an optimal state, the above adjustment must be made. The adjustment is performed after the polishing of one substrate is completed and before polishing the next substrate. In the partial polishing apparatus 1000 shown in FIG. 15, because the contact area between the polishing pad 502 and the substrate Wf is small, the clogging of the polishing pad 502 occurs during polishing faster than that of a polishing apparatus using a large polishing pad. Therefore, in a polishing apparatus using a small polishing member, the polishing speed during polishing and the distribution in the substrate Wf plane are more likely to change than in a polishing apparatus using a large polishing member. Therefore, in a partial grinding apparatus using a small grinding member, the grinding member should maintain a good state during grinding.

An object of the present application is to provide a grinding device in which the grinding member can maintain a good state during grinding.

[Aspect 1] Aspect 1 provides a polishing apparatus for partially polishing a substrate, the polishing apparatus having: a polishing member whose processing surface contacting the substrate is smaller than the substrate; an adjusting member for adjusting the polishing member; a pressing mechanism for pressing the adjustment member against the polishing member during substrate polishing; and a control device for controlling the operation of the polishing device; the control device is configured to prevent the polishing member from partially polishing the substrate when the polishing member partially polishes the substrate. The aforementioned first pressing mechanism is controlled. Using the polishing member of the form 1, when polishing the substrate with the polishing member, the polishing member can be adjusted at the same time. Thus, the grinding member can be maintained in a good state during grinding.

[Form 2] Form 2 includes, in the polishing apparatus of Form 1, a pressing mechanism for pressing the polishing member against the substrate; and a first driving mechanism for the polishing member to be in contact with the substrate. A first direction of motion in which the surfaces are parallel imparts motion.

[Form 3] Form 3 is provided in the polishing apparatus of form 2 with a second driving mechanism, which is used for driving the above-mentioned The adjustment member imparts movement.

[Aspect 4] Aspect 4 is the polishing apparatus of aspect 3, wherein the second drive mechanism is configured to impart linear motion and/or rotational motion to the adjustment member.

[Form 5] Form 5 is the polishing apparatus of any one of Forms 1 to 4, wherein the control device is configured to control the first pressing mechanism so as to perform adjustment at a predetermined cycle during substrate polishing.

[Form 6] Form 6 is the polishing apparatus of any one of Form 1 to Form 5, wherein the grinding member and the adjusting member are held by a holding arm.

[Form 7] Form 7 is a grinding apparatus of any one of Form 1 to Form 6 having a recovery device for collecting scraps generated from the grinding member during adjustment.

[Form 8] Form 8 is the polishing apparatus of Embodiment 7, wherein the recovery apparatus has a suction portion for suctioning and removing debris generated from the grinding member during adjustment.

[Form 9] Form 9 is the grinding device of form 7, wherein the recovery device has a scraper or a scraper for collecting scraps generated from the grinding member during adjustment.

[Form 10] Form 10 is the polishing apparatus of any one of Forms 7 to 9, wherein the recovery device includes: a liquid supply mechanism for cleaning the adjusted grinding member; and a liquid recovery mechanism for It is to recover the liquid after the cleaning of the above-mentioned grinding member.

[Form 11] Form 11 is in the polishing apparatus of any one of Forms 1 to 10, wherein the above-mentioned grinding member has any one of the following: (1) a disc shape or a cylindrical shape, and the above-mentioned disc shape or The central axis of the aforementioned cylindrical shape is parallel to the substrate surface; (2) The circular plate shape, and the central axis of the aforementioned circular plate shape is inclined from the direction perpendicular to the substrate surface; (3) The conical shape or the truncated cone shape, and the aforementioned cone shape A shape or the central axis of the aforementioned truncated conical shape is parallel to the surface of the substrate; (4) a spherical shape or a shape having a part of a spherical shape; and (5) a belt member.

[Aspect 12] Aspect 12 provides a method for polishing a substrate, the polishing method having the steps of: pressing a polishing member whose processed surface in contact with the substrate is smaller than the substrate against the substrate; The polishing member is relatively moved with the substrate to polish the substrate; and in the polishing of the substrate, the polishing member is adjusted by contacting the polishing member with the polishing member. In the polishing method of the form 12, when polishing the substrate with the polishing member, the polishing member can be adjusted at the same time. Therefore, the grinding member can maintain a good state during grinding.

[Aspect 13] Aspect 13 is the polishing method of aspect 12, including the step of imparting linear motion and/or rotational motion to the adjustment member.

[Aspect 14] Aspect 14 is the polishing method of aspect 12 or aspect 13, which includes a step of recovering debris generated from the polishing member during adjustment of the polishing member.

200: Cleaning mechanism

202: wash head

204: Cleaning Components

206: Wash head holding arm

208: Rinse Nozzle

300: Recovery Unit

302: Attraction Department

304: Attraction Path

306: Scraper

308: Support member

310: Liquid supply mechanism

312: Liquid Recovery Agency

314: Liquid discharge part

400: stage

400A: Rotary shaft

402: Lifting pin

404: Orientation mechanism

406: Positioning pad

408: Inspection Department

410: Rotary drive mechanism

420: Status Detection Department

500: Grinding head

502: Grinding pad

502A: Rotary axis

502B: Abrasive Belt Components

504: First holding member

506: Second holding member

508: Guide pin

510: Rotary shaft

520: Support member

522: Rotary Mechanism

600: Hold Arm

602: Vertical drive mechanism

620: Transverse drive mechanism

700: Treatment liquid supply system

702: Grinding liquid supply nozzle

710: Supply Source

800: Adjustment Department

810: Dressing stage

810A: Rotary axis

820: Dresser

850: Second adjuster

852: Adjustment Components

852A: Rotary axis

854: Mobile Mechanism

856: Shake Mechanism

858: Support member

860: Concave shape part

900: Controls

1000: Part of the grinding device

1002: Base Surface

1100: Substrate Handling Systems

1200: Large diameter grinding device

1300: Washing device

1400: Drying device

1500: Conveyor

Wf: substrate

The first figure is a schematic diagram showing the structure of a part of a polishing apparatus according to an embodiment.

The second figure is a schematic diagram showing the mechanism of the grinding 502 holding the grinding head according to one embodiment.

FIG. 3 is a perspective view schematically showing an example of a second adjuster that can be used in a partial polishing apparatus according to one embodiment.

FIG. 4 is a perspective view schematically showing an example of a second adjuster that can be used in a part of the polishing apparatus according to one embodiment.

Fig. 5 is a side view schematically showing an example of a polishing head and a second adjuster that can be used in part of the polishing apparatus according to one embodiment.

FIG. 6 is a side view schematically showing an example of a polishing head and a second adjuster that can be used in part of the polishing apparatus according to one embodiment.

FIG. 7 is a side view schematically showing an example of a polishing head and a second adjuster that can be used in part of the polishing apparatus according to one embodiment.

Fig. 8 is a side view schematically showing an example of a polishing head and a second adjuster that can be used in part of the polishing apparatus according to one embodiment.

The ninth figure is a figure viewed from the direction of the arrow 9 in the eighth figure.

Fig. 10 is a side view schematically showing a recovery device according to an embodiment.

Fig. 11 is a side view schematically showing a recovery device according to an embodiment.

Fig. 12 is a side view schematically showing a recovery device according to an embodiment.

Figure 13A shows an example of a control circuit for processing information related to film thickness, unevenness and height of a substrate according to an embodiment.

Fig. 13B shows a circuit diagram when the state detection portion of the substrate surface is divided from the control portion for partial polishing shown in Fig. 13A.

FIG. 14 is a schematic diagram showing a substrate processing system equipped with a partial polishing apparatus according to an embodiment.

FIG. 15 is a schematic configuration diagram showing an example of a partial polishing apparatus for polishing treatment using a polishing pad having a diameter smaller than that of the object to be treated.

Hereinafter, embodiments of a part of the polishing apparatus of the present invention will be described with reference to the drawings. In the drawings, the same or similar elements are marked with the same or similar reference signs, and repeated descriptions of the same or similar elements are omitted in the description of various embodiments. In addition, the features shown in the various embodiments may be applied to other embodiments as long as they do not contradict each other.

The first figure is a schematic diagram showing the structure of a part of a polishing apparatus 1000 according to an embodiment. As shown in the first figure, part of the grinding apparatus 1000 is formed on the base surface 1002 . The partial polishing apparatus 1000 can also be constructed as an independent apparatus, and can also be used as a module of a part of the substrate processing system 1100 including the large-diameter polishing apparatus 1200 using the large-diameter polishing pad together with the partial polishing apparatus 1000. structure (refer to Figure 14). Part of the polishing apparatus 1000 is installed in a frame (not shown). The frame body is provided with an exhaust mechanism (not shown), and is configured so that the polishing liquid and the like are not exposed to the outside of the frame body during the polishing process.

As shown in FIG. 1, the partial polishing apparatus 1000 includes a stage 400 that holds the substrate Wf upward. In one embodiment, the substrate Wf can be placed on the stage 400 by a transfer device not shown. picture Part of the polishing apparatus 1000 shown is provided with four lift pins 402 that can move up and down around the stage 400. When the lift pins 402 are raised, the substrate Wf can be received on the four lift pins 402 from the transfer device. After the substrate Wf is loaded on the lift pins 402 , the lift pins 402 are lowered to the position where the substrate is delivered to the stage 400 , thereby temporarily placing the substrate Wf on the stage. Therefore, the substrate Wf can be positioned in the area restricted by the inner sides of the four lift pins 402 . However, when high-precision positioning is required, the substrate Wf may be positioned at a specified position on the stage 400 by the positioning mechanism 404 separately. In the embodiment shown in the first figure, the substrate Wf can be positioned with the positioning pads 406 by positioning pins (not shown). The positioning mechanism 404 includes a positioning pad 406 movable in a direction within the plane of the substrate Wf, and includes a plurality of positioning pins (not shown) on the opposite side of the positioning pad 406 with the stage 400 therebetween. When the substrate Wf is loaded on the lift pins 402, the positioning pads 406 are pressed against the substrate Wf, and the positioning pads 406 and the positioning pins can be used to position the substrate Wf. After the substrate Wf is positioned, the substrate Wf is fixed on the stage 400 , and then the lift pins 402 are lowered to place the substrate Wf on the stage 400 . The stage 400 may be fixed on the stage 400 by vacuum suction, for example. The partial polishing apparatus 1000 includes a detection unit 408 . The detection unit 408 is for detecting the position of the substrate Wf arranged on the stage 400 . For example, the position of the substrate Wf on the stage 400 can be detected by detecting a groove formed in the substrate Wf, an orientation plane, or a peripheral portion of the substrate. Using the position of the groove or the orientation plane as a reference, any point on the substrate Wf can be specified, whereby a desired portion of the area can be ground. In addition, since the position information of the substrate Wf on the stage 400 (eg, the offset from the ideal position) can be obtained from the position information of the outer periphery of the substrate, the control device 900 can also correct the moving position of the polishing pad 502 according to the information. In addition, when the substrate Wf is detached from the stage 400, the lift pins 402 are moved from the stage 400 to the substrate receiving position, and then the vacuum suction of the stage 400 is released. Then, after the lift pins 402 are raised to move the substrate Wf to a position where the substrates are delivered to the transfer device, the transfer device (not shown) can receive the substrate Wf on the lift pins 402 . Then, the substrate Wf can be transferred to any position for subsequent processing by the transfer device.

The stage 400 of the partial polishing apparatus 1000 is provided with a rotary drive mechanism 410, and is configured to be rotatable and/or angularly rotatable around the rotating shaft 400A. In addition, the term "rotation" in this specification refers to continuous rotation in a certain direction, and the term "angular rotation" refers to movement (including reciprocating motion) in the circumferential direction within a specified angular range. In addition, another embodiment of the stage 400 may be provided with a moving mechanism that imparts linear motion to the held substrate Wf. In this specification, "linear motion" refers to motion in a specified linear direction, and also includes linear reciprocating motion.

The partial polishing apparatus 1000 shown in the first figure includes a polishing head 500 . The polishing head 500 holds the polishing pad 502 . The second figure is a schematic diagram showing a mechanism for holding the polishing pad 502 of the polishing head 500 . As shown in FIG. 2 , the polishing head 500 includes a first holding member 504 and a second holding member 506 . The polishing pad 502 is held between the first holding member 504 and the second holding member 506 . As shown in the figure, the first holding member 504, the polishing pad 502, and the second holding member 506 are all in the shape of a circular plate. The diameters of the first holding member 504 and the second holding member 506 are smaller than the diameter of the polishing pad 502 . Therefore, in a state in which the polishing pad 502 is held by the first holding member 504 and the second holding member 506 , the polishing pad 502 is exposed from the edges of the first holding member 504 and the second holding member 506 . In addition, the first holding member 504, the polishing pad 502, and the second holding member 506 all have an opening in the center, and the rotating shaft 510 is inserted into the opening. One or a plurality of guide pins 508 protruding from the polishing pad 502 side are provided on the surface of the first holding member 504 on the polishing pad 502 side. In addition, through holes are provided in the polishing pad 502 at positions corresponding to the guide pins 508 , and a recessed portion for accommodating the guide pins 508 is formed on the surface of the second holding member 506 on the polishing pad 502 side. Therefore, when the first holding member 504 and the second holding member 506 are rotated by the rotating shaft 510, the polishing pad 502 can rotate integrally with the holding members 504 and 506 without sliding. In addition, the polishing pad 502 is made of the material of a commercially available CMP pad.

In the embodiment shown in the first figure, the polishing head 500 holds the polishing pad 502 so that the disc-shaped side surface of the polishing pad 502 faces the substrate Wf. In addition, the shape of the polishing pad 502 is not limited to a circular plate shape, and other shapes of polishing pads can also be used. The partial polishing apparatus 1000 shown in the first figure includes a holding arm 600 for holding the polishing head 500 . The holding arm 600 includes a first drive mechanism for imparting movement in the first movement direction to the substrate Wf in the polishing pad 502 . The so-called “first movement direction” here refers to the movement of the polishing pad 502 for polishing the substrate Wf, and is the rotational movement of the polishing pad 502 in the partial polishing apparatus 1000 in the first figure. Therefore, the first drive mechanism may be constituted by, for example, a general motor. At the contact portion between the substrate Wf and the polishing pad 502, the polishing pad 502 moves parallel to the surface of the substrate Wf (the tangential direction of the polishing pad 502; the y direction in the first figure), so even if the polishing pad 502 rotates, The "first movement direction" can still be regarded as a certain straight line direction.

In the above-mentioned partial polishing apparatus 1000 shown in FIG. 15, the polishing pad 502 is in the shape of a circular plate, and the rotation axis is perpendicular to the surface of the substrate Wf. Therefore, as described above, the linear velocity distribution is generated in the radial direction of the polishing pad 502 , and the polishing speed distribution is generated in the radial direction of the polishing pad 502 . Therefore, in the partial polishing apparatus 1000 shown in FIG. 15, the deviation of the shape of the unit machining mark corresponding to the contact area between the polishing pad 502 and the substrate Wf from the specified shape becomes large. However, in the partial polishing apparatus 1000 shown in the first figure, the rotation axis of the polishing pad 502 is parallel to the surface of the substrate Wf, and the linear velocity is constant in the contact area between the polishing pad 502 and the substrate Wf. Therefore, in the partial polishing apparatus 1000 according to the embodiment of FIG. 1, in the contact area between the polishing pad 502 and the substrate Wf, the deviation of the polishing speed from the linear velocity distribution is larger than that in the case of the partial polishing apparatus 1000 shown in FIG. 15. Small. Therefore, in the partial polishing apparatus 1000 of the first figure, the deviation of the shape of the unit machining mark from the specified shape is reduced. In addition, in the partial polishing apparatus 1000 shown in FIG. 1, since the rotation axis of the polishing pad 502 is parallel to the surface of the substrate Wf, unlike the case of the partial polishing apparatus 1000 shown in FIG. 15, the polishing pad 502 and the substrate Wf The miniaturization of the contact area is easy. Since the contact area between the polishing pad 502 and the substrate Wf can be miniaturized, for example, increasing the diameter of the polishing pad 502 can increase the relative linear velocity between the polishing pad 502 and the substrate Wf, thereby increasing the polishing speed. In addition, the relationship between the polishing pad 502 and the substrate Wf The contact area is determined by the diameter and thickness of the polishing pad 502 . For example, the diameter Φ of the polishing pad 502 can be combined in the range of about 50 mm to about 300 mm, and the thickness of the polishing pad 502 is about 1 mm to about 10 mm.

In one embodiment, the rotation speed of the polishing pad 502 can be changed by the first driving mechanism during polishing. The polishing speed can be adjusted by changing the rotation speed, so that even when the required polishing amount of the area to be processed on the substrate Wf is large, it can still be effectively polished. In addition, for example, during polishing, even if the wear of the polishing pad 502 is large and the diameter of the polishing pad 502 changes, the polishing speed can be maintained by adjusting the rotation speed. In addition, in the embodiment shown in the first figure, the first driving mechanism is to impart rotational motion to the disc-shaped polishing pad 502. However, in other embodiments, the shape of the polishing pad 502 may be other shapes. , the first driving mechanism can also be configured to impart linear motion to the polishing pad 502 . In addition, linear motion also includes linear reciprocating motion.

The partial polishing apparatus 1000 shown in the first figure includes a vertical drive mechanism 602 that moves the holding arm 600 in a direction perpendicular to the surface of the substrate Wf (z-direction in the first figure). The polishing head 500 and the polishing pad 502 can be moved in a direction perpendicular to the surface of the substrate Wf together with the holding arm 600 by the vertical driving mechanism 602 . The vertical drive mechanism 602 also functions as a pressing mechanism for pressing the polishing pad 502 against the substrate Wf when the substrate Wf is partially polished. In the embodiment shown in the first figure, the vertical drive mechanism 602 is a mechanism using a motor and a ball screw, but other embodiments can also be a pneumatic or hydraulic drive mechanism or a spring drive mechanism, or a combination of these. . For example, the constant pressure control of the combination of air cylinder and precision regulator, the constant pressure control of the combination of air cylinder and elastic body (spring, etc.), the open circuit control of the combination of air cylinder and electric pressure regulating valve, the air cylinder and electric pressure regulation Closed-loop control using the pressure value from an external pressure sensor in combination of valves, closed-loop control using load value from load sensor in combination of air cylinder and electric pressure regulator, and combination of servo motor and ball screw from the load The closed loop control of the load value of the sensor, etc. In addition, in one embodiment, the vertical driving mechanism 602 used for the grinding head 500 can also use different driving mechanisms for coarse movement and fine movement. For example, the driving mechanism for rough movement may be a driving mechanism using a motor, and the driving mechanism for fine movement for pressing the polishing pad 502 to the substrate Wf may be a driving mechanism using an air cylinder. At this time, by monitoring the pressing force of the polishing pad 502 and adjusting the air pressure in the air cylinder, the pressing force of the polishing pad 502 on the substrate Wf can be controlled. In addition, vice versa, the driving mechanism for rough motion can use an air cylinder, and the driving mechanism for fine motion uses a motor. At this time, the pressing force of the polishing pad 502 on the substrate Wf can be controlled by monitoring the torque of the motor for inching and controlling the motor. In addition, other driving mechanisms can also use piezoelectric elements, and the amount of movement can be adjusted by the voltage applied to the piezoelectric elements. In addition, when the vertical drive mechanism 602 is divided into fine motion and coarse motion, the fine motion driving mechanism can also be installed at the position where the holding arm 600 holds the polishing pad 502 , that is, the example in the first figure is provided at the front end of the holding arm 600 .

The partial polishing apparatus 1000 shown in the first figure includes a lateral drive mechanism 620 for moving the holding arm 600 in the lateral direction (x direction in the first figure). The polishing head 500 and the polishing pad 502 can be moved in the lateral direction together with the holding arm 600 by the lateral drive mechanism 620 . In addition, the lateral direction (x direction) is perpendicular to the first movement direction and parallel to the second movement direction of the substrate surface. Therefore, part of the polishing apparatus 1000 polishes the substrate Wf by moving the polishing pad 502 in the first movement direction (y direction), and simultaneously moves the polishing pad 502 in the orthogonal second movement direction (x direction), so that the substrate can be The shape of the machining marks of Wf is more uniform. As described above, in the partial polishing apparatus 1000 shown in FIG. 1, the linear velocity in the contact area between the polishing pad 502 and the substrate Wf is constant. However, because the shape and material of the polishing pad 502 are not uniform, and the contact state between the polishing pad 502 and the substrate is not uniform, the shape of the machining marks on the substrate Wf, especially the contact surface between the polishing pad 502 and the substrate Wf, is not uniform with the first The vertical direction of the movement direction will cause the deviation of the grinding speed. However, by moving the polishing pad 502 in a direction perpendicular to the first moving direction during polishing, the polishing deviation can be alleviated, so that the shape of the machining marks can be made more uniform. In addition, in the embodiment shown in the first figure, The vertical drive mechanism 602 is a mechanism using a motor and a ball screw. In addition, in the embodiment shown in FIG. 1, the horizontal drive mechanism 620 is a structure in which each vertical drive mechanism 602 moves the holding arm 600. In addition, even if the second movement direction is not exactly perpendicular to the first movement direction, as long as it is a direction having a component perpendicular to the first movement direction, the effect of making the shape of the machining marks uniform can be exhibited.

The partial polishing apparatus 1000 of the embodiment shown in FIG. 1 includes a polishing liquid supply nozzle 702 . The polishing liquid supply nozzle 702 is fluidly connected to a polishing liquid, such as a slurry supply source 710 (see FIG. 15 ). In addition, in the partial polishing apparatus 1000 of the embodiment shown in FIG. 1 , the polishing liquid supply nozzle 702 is held by the holding arm 600 . Therefore, the polishing liquid can be efficiently supplied only to the polishing region on the substrate Wf through the polishing liquid supply nozzle 702 .

The partial polishing apparatus 1000 of the embodiment shown in FIG. 1 includes a cleaning mechanism 200 for cleaning the substrate Wf. In the embodiment shown in FIG. 1 , the cleaning mechanism 200 includes a cleaning head 202 , a cleaning member 204 , a cleaning head holding arm 206 , and a flushing nozzle 208 . The cleaning member 204 is a member for cleaning the partially ground substrate Wf by rotating and contacting the substrate Wf. In one embodiment, the cleaning member 204 may be formed of a PVA sponge. However, the cleaning member 204 may replace the PVA sponge, or additionally include a cleaning nozzle for realizing megasonic cleaning, high-pressure water cleaning, and two-fluid cleaning. The cleaning member 204 is held by the cleaning head 202 . In addition, the cleaning head 202 is held by the cleaning head holding arm 206 . The cleaning head holding arm 206 includes a drive mechanism for rotating the cleaning head 202 and the cleaning member 204 . The drive mechanism may be constituted by, for example, a motor or the like. In addition, the cleaning head holding arm 206 includes a swing mechanism for swinging the in-plane of the substrate Wf. The washing mechanism 200 includes a washing nozzle 208 . The washing nozzle 208 is connected to a washing liquid supply source (not shown). The cleaning liquid may be, for example, pure water, chemical liquid, or the like. In one embodiment, the flushing nozzle 208 may also be mounted on the cleaning head holding arm 206 . The flushing nozzle 208 is provided with a rocking mechanism for rocking in the plane of Wf.

The partial polishing apparatus 1000 of the embodiment shown in FIG. 1 includes an adjustment unit 800 for adjusting the polishing pad 502 . The adjustment unit 800 is arranged outside the stage 400 . The adjustment unit 800 includes a dressing stage 810 that holds the dresser 820 . In the embodiment shown in the first figure, the trimming stage 810 can be rotated around the rotation axis 810A. In the partial polishing apparatus 1000 shown in the first figure, the polishing surface of the polishing pad 502 (the surface in contact with the substrate Wf) is pressed against the dresser 820, and the polishing pad 502 and the dresser 820 are rotated, so that the polishing of the polishing pad 502 can be performed. Adjustment. In addition, in another embodiment, the trimming stage 810 may be configured to perform linear motion (including reciprocating motion) instead of rotational motion. In addition, in the partial polishing apparatus 1000 shown in FIG. 1 , the adjustment unit 800 is mainly used to adjust the polishing pad 502 before the partial polishing of the substrate Wf at a certain point is completed, and the polishing pad 502 is adjusted before the next point or partial polishing of the next substrate. In addition, in the middle of partially polishing the substrate Wf, the polishing pad 502 may be temporarily withdrawn from the adjustment section 800 for adjustment. Here, the dresser 820 can be, for example, by (1) a diamond dresser in which diamond particles are fixed by electrodeposition on the surface; (2) a diamond dresser in which the diamond abrasive grains are arranged on the whole or part of the contact surface with the polishing pad; (3) A brush dresser in which resin-made bristles are arranged on the whole or part of the contact surface with the polishing pad; and (4) Any one of these or any combination of these is formed.

The partial polishing apparatus 1000 of the embodiment shown in FIG. 1 includes the second adjuster 850 . The second adjuster 850 is used to adjust the polishing surface (surface contacting the substrate Wf) of the polishing pad 502 in polishing the substrate Wf with the polishing pad 502 . Therefore, the second adjuster 850 may also be called an in-situ adjuster. The second adjuster 850 is held by the holding arm 600 in the vicinity of the polishing pad 502 . The second adjuster 850 includes a moving mechanism 854 (refer to FIGS. 3-9 ) for moving the adjustment member 852 in a direction in which the adjustment member 852 comes into contact with the polishing pad 502 . Here, the adjustment member 852 can be, for example, by (1) a diamond dresser with diamond particles fixed on the surface by electrodeposition; (2) a diamond dresser with diamond abrasive particles arranged on the whole or part of the contact surface with the polishing pad; (3) Arrange resin-made bristles on the entire surface of the contact surface with the polishing pad or a portion of a brush conditioner; and (4) formed from any one of these or any combination of these. In the embodiment of FIG. 1 , the adjusting member 852 is held away from the polishing pad 502 in the y direction in the vicinity of the polishing pad 502 , and the adjusting member 852 can be moved in the y direction by the moving mechanism 854 . The moving mechanism 854 has a function as a pressing mechanism for pressing the adjustment member 852 against the polishing pad 502 . Here, the moving mechanism 854 may also be a mechanism using a motor and a ball screw, a pneumatic or hydraulic driving mechanism, a spring driving mechanism, or a combination thereof. For example, constant pressure control by a combination of an air cylinder and a precision regulator, constant pressure control by a combination of an air cylinder and an elastic body (spring, etc.), and opening by a combination of an air cylinder and an electric pressure regulating valve are mentioned. Loop control, closed loop control using the pressure value from an external pressure sensor in the combination of an air cylinder and electric pressure regulator, closed loop control using the load value from the load sensor in the combination of an air cylinder and an electric pressure regulator, Closed-loop control of the load value from the load cell is used for the combination of the servo motor and the ball screw. In addition, in one embodiment, the adjusting member 852 can also be configured to move rotationally and/or linearly by a drive mechanism (not shown). Therefore, when the substrate Wf is polished by the polishing pad 502, the polishing pad 502 can be adjusted during the polishing of the substrate Wf by pressing the adjustment member 852 against the polishing pad 502 by rotating the adjustment member 852 or the like. In addition, the details of the second regulator 850 will be described later.

In the embodiment shown in the first figure, a part of the polishing apparatus 1000 is provided with a control apparatus 900 . Various driving mechanisms of the partial polishing apparatus 1000 are connected to the control apparatus 900 , and the control apparatus 900 can control the actions of the partial polishing apparatus 1000 . Moreover, the control apparatus is equipped with the calculation part which calculates the target grinding|polishing amount in the to-be-polished area|region of the board|substrate Wf. The control device 900 is configured to control the polishing device according to the target polishing amount calculated by the computing unit. In addition, the control device 900 can be configured by installing a predetermined program in a general computer provided with a memory device, a CPU, an input/output mechanism, and the like.

In addition, in one embodiment, part of the polishing apparatus 1000 may also be provided with a state detection unit 420 (Fig. 13A, Fig. 13B, etc.) for detecting the state of the polished surface of the substrate Wf. icon. An example of the state detection unit may be Wet-ITM (In-line Thickness Monitor) 420 . The Wet-ITM420 series detection head exists on the substrate Wf in a non-contact state, and by moving all over the substrate Wf, it is possible to detect (measure) the film thickness distribution (or the film thickness correlation) of the film formed on the substrate Wf information distribution). In addition, the state detection part 420 may use the detector of any method other than Wet-ITM. For example, a conventional eddy current or optical non-contact detection method can be used as the available detection method, and a contact detection method can also be used. For example, the contact-type detection method can be used as a resistance-type detection method, which prepares a detection head with a probe that can be energized, and scans the surface of the substrate Wf when the probe is in contact with the substrate Wf and is energized to detect the film resistance. distributed. In addition, other contact detection methods can also use the step detection method, which scans the surface of the substrate Wf in a state where the probes are in contact with the surface of the substrate Wf, and detects the uneven distribution of the surface by monitoring the up and down movement of the probes . In the contact and non-contact detection methods, the detection output is the film thickness or the signal equivalent to the film thickness. In the optical detection, in addition to the amount of reflected light of the light projected on the surface of the substrate Wf, the difference in film thickness can also be recognized from the difference in color tone on the surface of the substrate Wf. In addition, when detecting the film thickness on the substrate Wf, the substrate Wf should be rotated, and the detector should be oscillated in the radial direction to detect the film thickness. Thereby, information on the surface state such as the film thickness and level difference of the entire substrate Wf can be obtained. In addition, by using the position of the groove or the orientation plane detected by the detection section 408 as a reference, data such as the film thickness can be correlated with the position in the circumferential direction in addition to the position in the radial direction, whereby it is possible to obtain the position on the substrate Wf. The film thickness and step difference or the signal distribution related to these. In addition, during partial grinding, the movements of the stage 400 and the holding arm 600 can be controlled according to the position data.

The state detection unit 420 described above is connected to the control device 900 , and the signal detected by the state detection unit 420 is processed by the control device 900 . The control device 900 for the detector of the state detection unit 420 may also use The same hardware as the control device 900 that controls the movements of the stage 400, the polishing head 500, and the holding arm 600 may be used, but different hardware may be used. When the control device 900 for controlling the movements of the stage 400, the polishing head 500, and the holding arm 600 and the control device 900 for the detector use different hardware, the polishing process of the substrate Wf and the detection and detection of the surface state of the substrate Wf can be dispersed. The hardware resources for subsequent signal processing can be processed at high speed as a whole.

In addition, the detection sequence of the state detection unit 420 may be before the polishing of the substrate Wf, during the polishing, and/or after the polishing. When the state detection part 420 is mounted independently, even before, after or during polishing, the operation of the holding arm 600 will not be disturbed as long as it is an interval between polishing processes. However, in the processing of the substrate Wf, the film thickness or the time delay of the signal related to the film thickness should be avoided as much as possible. During the processing of the substrate Wf, when the film thickness detection of the substrate Wf is performed at the same time as the processing of the polishing head 500, the operation of the holding arm 600 is used. The state detection unit 420 is scanned. In addition, when detecting the state of the surface of the substrate Wf, in this embodiment, the state detection unit 420 is installed in the partial polishing apparatus 1000. However, for example, the polishing process of the partial polishing apparatus 1000 takes time and time. From the viewpoint of productivity, this detection unit It can also be arranged outside part of the polishing apparatus 1000 as a detection unit. For example, in the case of ITM, Wet-ITM is effective during measurement during processing, and it is not necessarily required to be mounted on part of the polishing apparatus 1000 when obtaining a film thickness or a signal equivalent to the film thickness before or after processing. The ITM may be mounted outside the partial polishing module, and the measurement may be performed when the substrate Wf enters and exits the partial polishing apparatus 1000 . In addition, the polishing end point of each polished region of the substrate Wf can also be determined according to the film thickness obtained by the state detection unit 420 or the signals related to the film thickness, unevenness, and height.

The third figure is a perspective view schematically showing an example of the second adjuster 850 that can be used in the partial polishing apparatus 1000 shown in the first figure. The third figure shows the vicinity of the grinding head 500 at the front end of the holding arm 600 . As shown in FIG. 3 , the polishing head 500 holds a rotatable disk-shaped polishing pad 502 . In the embodiment shown in the third figure, the polishing pad 502 can be rotated to move the substrate Wf in the y-direction of the first moving direction. As shown in FIG. 3 , the second adjuster 850 is attached to the holding arm 600 . The second regulator 850 is provided for The adjustment member 852 of the polishing pad 502 is adjusted. The adjustment member 852 is separated from the polishing pad 502 in the y direction in the vicinity of the polishing pad 502 and held by the moving mechanism 854 , and the adjustment member 852 can be moved in the y direction by the moving mechanism 854 . The moving mechanism 854 has a function as a pressing mechanism for pressing the adjustment member 852 against the polishing pad 502 . Therefore, the second adjuster 850 can adjust the polishing pad 502 during polishing by contacting the adjustment member 852 with the polishing pad 502 during polishing. In addition, the moving mechanism 854 may be constituted by a motor or the like, or a hydraulic or pneumatic moving mechanism may also be used.

The fourth figure is a perspective view schematically showing an example of the second adjuster 850 that can be used in the partial polishing apparatus 1000 shown in the first figure. The fourth figure shows the vicinity of the grinding head 500 at the front end of the holding arm 600 . In the second adjuster 850 shown in the fourth figure, a rocking mechanism 856 is added to the second adjuster 850 shown in the third figure. The rocking mechanism 856 has a component direction in the first moving direction perpendicular to the moving direction of the polishing pad 502 and parallel to the surface of the substrate Wf. The rocking mechanism 856 can move the moving mechanism 854 and the adjusting member 852. In the embodiment shown in FIG. 4, the rocking mechanism 856 can move the moving mechanism 854 and the adjusting member 852 in the first movement direction (y direction) of the polishing pad 502 perpendicular to and parallel to the x direction of the substrate Wf. Therefore, in adjusting the polishing pad 502 , the position of the adjustment member 852 in contact with the polishing pad 502 can be changed. In this way, by increasing the second movement direction component in the direction perpendicular to the first movement direction of the movement direction of the polishing pad 502, the contact surface between the polishing pad 502 and the substrate Wf can be adjusted more uniformly. In addition, the rocking mechanism 856 may be constituted by a motor or the like, or a hydraulic or pneumatic moving mechanism may also be used. In addition, the mechanism for imparting the second movement direction component is described in this embodiment as an example of the shaking movement, but for example, it may be a second movement direction component having a rotational movement or a translational rotational movement (movement combining linear movement and rotational movement). The motion mechanism is the same in other embodiments to be described later. In addition, the shape of the adjustment member 852 is flat in this embodiment, but can be appropriately changed according to the shape of the polishing pad 502 or the form of the second motion mechanism, and the same applies to other embodiments described later. For example a second exercise machine When the structure is rotated or rotated in translation, the adjustment member 852 can also be in the shape of a circular plate. In addition, when the polishing pad 502 has a circular plate, a cylinder, or a spherical curved surface, the contact surface between the adjusting member 852 and the polishing pad 502 can also have a curved surface that follows the shape of the curved surface, so that the polishing pad 502 can be adjusted effectively. In addition, chamfering or the like may be performed on the end of the adjustment member 852 in order to suppress the load concentration during adjustment.

FIG. 5 is a side view schematically showing an example of the grinding head 500 and the second adjuster 850 of a part of the grinding apparatus 1000 that can be used in one embodiment. In the embodiment shown in Fig. 5, the polishing pad 502 is in the shape of a disc. The disc-shaped polishing pad 502 is held by the rotatable polishing head 500 . As shown in FIG. 5, the rotation axis 502A of the polishing head 500 is inclined from the direction perpendicular to the surface of the substrate Wf. In other words, the surface of the disc-shaped polishing pad 502 is not parallel to the substrate Wf. Therefore, when the polishing head 500 is rotated and the polishing pad 502 is pressed against the substrate Wf, the disc-shaped polishing pad 502 only contacts the substrate Wf at the edge portion in a certain direction, and the edge portion in the opposite direction is separated from the substrate Wf. In this state, since only the edge portion of the polishing pad 502 is in contact with the substrate Wf, a minute area can be polished.

The second adjuster 850 of the partial polishing apparatus 1000 shown in FIG. 5 includes an adjustment member 852 . The adjustment member 852 is connected to the moving mechanism 854 . The moving mechanism 854 can move the adjusting member 852 to the direction of the polishing pad 502 , and can also press the adjustment member 852 against the polishing pad 502 . In one embodiment, the moving mechanism 854 is coupled to the rocking mechanism 856 . The rocking mechanism 856 can move the moving mechanism 854 and the adjustment member 852 to a direction having a composition in a direction perpendicular to the rotation axis 502A of the polishing pad 502 . As shown in FIG. 5 , the moving mechanism 854 and the rocking mechanism 856 are held by the support member 858 . The support member 858 is fixed to the holding arm 600 . As shown in FIG. 5, the edge portion of the polishing pad 502 in a certain direction can be pressed against the substrate Wf to polish the substrate Wf, while the edge portion of the polishing pad 502 in the opposite direction is separated from the substrate Wf. Therefore, by pressing the adjustment member 852 at the edge portion in the opposite direction, the adjustment of the polishing pad 502 can be performed during the polishing of the substrate Wf. In addition, in one embodiment, the second adjuster 850 may include the adjustment member 852 shown in the fifth figure centered on the rotating shaft 852A Rotation mechanism that rotates with the heart and translation rotation motion mechanism. However, the rotating mechanism may also be absent. The moving mechanism 854 and the rocking mechanism 856 may be constituted by a motor or the like, or a hydraulic or pneumatic moving mechanism may also be used.

FIG. 6 is a side view schematically showing an example of the grinding head 500 and the second adjuster 850 of the partial grinding apparatus 1000 that can be used in one embodiment. In the embodiment shown in Figure 6, the polishing pad 502 is in the shape of a frustoconical shape. Alternatively, a polishing pad may be arranged on a truncated cone-shaped substrate. The truncated cone-shaped polishing pad 502 is held on the rotatable polishing head 500 . As shown in FIG. 6 , the rotation axis 502A of the grinding head 500 is parallel to the surface of the substrate Wf, and coincides with the center of the truncated cone. In this state, since only the edge portion of the polishing pad 502 is in contact with the substrate Wf, a minute area can be polished.

The second adjuster 850 of the partial polishing apparatus 1000 shown in FIG. 6 includes an adjustment member 852 . The adjustment member 852 is disposed so as to be in contact with the side surface of the truncated cone-shaped polishing pad 502 . The adjustment member 852 is connected to the moving mechanism 854 . The moving mechanism 854 can move the adjusting member 852 toward the side surface of the truncated cone-shaped polishing pad 502 , and can make it press against the side surface of the truncated cone-shaped polishing pad 502 . In one embodiment, the moving mechanism 854 is coupled to the rocking mechanism 856 . The rocking mechanism 856 can move the moving mechanism 854 and the adjusting member 852 in a direction along the side surface of the truncated cone-shaped polishing pad 502 . As shown in FIG. 6 , the moving mechanism 854 and the rocking mechanism 856 are held by the support member 858 . The support member 858 is fixed to the holding arm 600 . In the embodiment shown in FIG. 6 , the polishing pad 502 can be used to polish the substrate Wf, and the polishing pad 502 can be adjusted by the second adjuster 850 at the same time. The moving mechanism 854 and the rocking mechanism 856 may be constituted by a motor or the like, or a hydraulic or pneumatic moving mechanism may also be used.

FIG. 7 is a side view schematically showing an example of the polishing head 500 and the second adjuster 850 that can be used in a part of the polishing apparatus 1000 of one embodiment. In the embodiment shown in FIG. 7, the polishing pad 502 has a shape that is part of a spherical shape. Or it can also be used in a part having a spherical shape A polishing pad is configured on a shaped substrate. The polishing pad 502 is held by the rotatable polishing head 500 . As shown in FIG. 7, the rotation axis 502A of the polishing head 500 is parallel to the surface of the substrate Wf.

The second adjuster 850 of the partial polishing apparatus 1000 shown in FIG. 7 includes an adjustment member 852 . The adjustment member 852 has a circular plate shape, a square plate shape, or a curved surface shape along the spherical shape of the polishing pad 502 , and is disposed on the side surface of the polishing pad 502 so as to be contactable. The adjustment member 852 is connected to the moving mechanism 854 . The moving mechanism 854 can move the adjustment member 852 toward the polishing pad 502 and press the polishing pad 502 . In the embodiment shown in FIG. 7 , the moving mechanism 854 is held by the support member 858 . The support member 858 includes a curved concave portion 860 . As shown in FIG. 7 , the curved surface of the concave portion 860 may be a curved surface serving as the center of the spherical shape of the polishing pad 502 . The moving mechanism 854 is located on the curved surface of the concave portion 860 of the support member 858 and is swingably arranged along the curved surface. The support member 858 is fixed to the holding arm 600 . In the embodiment shown in FIG. 7 , the polishing pad 502 can be used to polish the substrate Wf, and the polishing pad 502 can be adjusted by the second adjuster 850 at the same time. The moving mechanism 854 and the rocking mechanism 856 may be constituted by a motor or the like, or a hydraulic or pneumatic moving mechanism may also be used.

FIG. 8 is a side view schematically showing an example of the polishing head 500 and the second adjuster 850 that can be used in a part of the polishing apparatus 1000 of one embodiment. In the embodiment shown in FIG. 8, the polishing member has a polishing belt member 502B. The polishing belt member 502B is supported by the support member 520, and the polishing belt member 502B can be pressed against the substrate Wf. The polishing belt member 502B is movable in the longitudinal direction by the rotation mechanism 522 . The polishing belt member 502B is made of, for example, a commercially available CMP pad material. In the embodiment of FIG. 8 , the second adjuster 850 has an adjustment member 852 . The adjustment member 852 has a circular plate shape or a square plate shape, and is arranged so as to be in contact with the polishing surface of the polishing belt member 502B. The adjustment member 852 is connected to the moving mechanism 854 . Movement mechanism 854 may move adjustment member 852 toward abrasive belt member 502B. As shown in FIG. 8, the second adjuster 850 is inside the grinding belt member 502B, and has a belt back surface at a position corresponding to the adjustment member 852 Support member 862. In the embodiment shown in FIG. 8, the polishing belt member 502B is supported by the belt back support member 862, and the adjustment member 852 can be pressed against the polishing belt member 502B for adjustment.

The ninth figure is a figure viewed from the direction of the arrow 9 in the eighth figure. As shown in FIG. 9 , the second adjuster 850 includes a swing mechanism 856 . The rocking mechanism 856 can move the moving mechanism 854 and the adjusting member 852 in the width direction of the polishing belt member 502B. The moving mechanism 854 and the rocking mechanism 856 may be constituted by a motor or the like, or a hydraulic or pneumatic moving mechanism may also be used.

A partial polishing apparatus 1000 according to one embodiment includes a recovery device 300 for recovering debris generated from polishing members when the polishing pad 502 is adjusted. FIG. 10 is a side view schematically showing a recovery device 300 according to an embodiment. As shown in FIG. 10 , the recovery device 300 is attached to the holding arm 600 . The recovery device 300 shown in FIG. 10 includes a suction part 302 . The suction part 302 is arranged so as to be close to the surface where the polishing pad 502 is in contact with the substrate Wf. In the embodiment of Fig. 10, the polishing pad 502 is a disc-shaped or cylindrical-shaped polishing pad 502, and the suction portion 302 is disposed on the side surface close to the disc-shaped or cylindrical-shaped polishing pad 502. A suction passage 304 is connected to the suction part 302, and the suction passage 304 is connected to a vacuum source (not shown). The suction portion 302 is disposed on the downstream side of the moving direction of the polishing pad 502 (rotational direction in the embodiment of FIG. 10 ) than the position where the adjusting member 852 contacts the polishing pad 502 . In the embodiment of FIG. 10, the polishing pad 502 is rotated in the clockwise direction, and the suction portion 302 is disposed on the downstream side from the position where the adjustment member 852 contacts the polishing pad 502. As shown in FIG. 10 , part of the polishing apparatus 1000 can use the polishing pad 502 to polish the substrate Wf, and use the second adjuster 850 to adjust the polishing pad 502 . Debris is generated from the polishing pad 502 by the adjustment. The recycling device 300 shown in Figure 10 can suction and remove debris generated during adjustment. With the recovery device, the polishing pad debris generated when the second adjuster 850 is adjusted can be prevented from reaching the surface of the substrate Wf, and the surface of the substrate Wf can be inhibited from being polluted by the polishing pad debris.

FIG. 11 is a side view schematically showing a recovery device 300 according to an embodiment. As shown in FIG. 11 , the recovery device 300 is attached to the holding arm 600 . The recovery device 300 shown in FIG. 11 includes a scraper 306 (or scraper). The squeegee 306 is arranged so as to be in contact with the surface of the polishing pad 502 in contact with the substrate Wf. In the embodiment of FIG. 11, the polishing pad 502 is a disc-shaped or cylindrical polishing pad 502, and a scraper 306 is disposed so as to contact the side surface of the disc-shaped or cylindrical polishing pad 502. The scraper 306 is supported by a support member 308 which is connected to the holding arm 600 . As shown in FIG. 11 , part of the polishing apparatus 1000 can use the polishing pad 502 to polish the substrate Wf, and use the second adjuster 850 to adjust the polishing pad 502 . Debris is generated from the polishing pad 502 by the adjustment. The recovery device 300 shown in FIG. 11 can remove debris generated during adjustment from the polishing pad 502 by the scraper 306 . In addition, a recovery device 300 for recovering scraps generated from the polishing member shown in FIG. 10 on the downstream portion of the rotation of the polishing pad 502 to the scraper 306 may be further provided, although not shown.

FIG. 12 is a side view schematically showing a recovery device 300 according to an embodiment. The recovery apparatus 300 shown in FIG. 12 includes: a liquid supply mechanism 310 for cleaning the polishing pad 502 after adjustment; and a liquid recovery mechanism 312 for recovering the liquid after cleaning the polishing pad 502 . The liquid supply mechanism 310 can be, for example, a nozzle for spraying pure water on the polishing pad 502 . The liquid supply mechanism 310 may be a container for accommodating pure water sprayed on the polishing pad 502, and a liquid discharge portion 314 may be provided in the container. As shown in FIG. 12 , part of the polishing apparatus 1000 can use the polishing pad 502 to polish the substrate Wf, and use the second adjuster 850 to adjust the polishing pad 502 . Debris is generated from the polishing pad 502 by the adjustment. The recycling device 300 shown in FIG. 12 can remove debris generated during adjustment from the polishing pad 502 by spraying the polishing pad 502 with liquid.

In FIGS. 10 to 12, the recovery device 300 is described with respect to part of the polishing apparatus 1000 having the disc-shaped or cylindrical-shaped polishing pad 502. The same recovery device can be installed in part of the grinding device 1000 of 502 300. For example, the recycling device 300 can be applied to any polishing pad 502, polishing belt member 502B, or any other polishing member disclosed in this specification.

FIG. 13A shows an example of a control circuit for processing information related to the film thickness, unevenness and height of the substrate Wf according to an embodiment. First, the partial grinding control unit determines the basic partial grinding formula in combination with the grinding formula and parameters set by the HMI (Human Machine Interface). At this time, some of the grinding treatment recipes and parameters can also be downloaded from the host (HOST) to the partial grinding device 1000. Secondly, the recipe server combines the basic partial grinding treatment recipe and the grinding processing information of the program Job to generate the basic partial grinding treatment recipe of each substrate Wf to be processed. The partial grinding formula server combines the partial grinding treatment formula of each substrate Wf processed with the substrate surface shape data stored in the partial grinding database, and further combines the data about the substrate surface shape after partial grinding of similar substrates in the past and obtained in advance The polishing conditions and the polishing speed data of each parameter are used to generate part of the polishing treatment formula of each substrate. At this time, the substrate surface shape data stored in the partial polishing database may use the data of the substrate Wf measured in the partial polishing apparatus 1000, or may also use the data downloaded from the host (HOST) to the partial polishing apparatus 1000 in advance. material. The partial grinding recipe server transmits the partial grinding processing recipe to the partial grinding device 1000 via the recipe server or directly. The partial grinding apparatus 1000 partially grinds the substrate Wf according to the received partial grinding treatment recipe.

Fig. 13B shows a circuit diagram when the state detection portion of the substrate surface is divided from the control portion for partial polishing shown in Fig. 13A. By separating the control unit for surface condition detection of the substrate that processes a large amount of data from the control unit for partial polishing, the data processing load of the control unit for polishing is reduced, and it can be expected to shorten the creation time of the program job and generate some polishing treatment recipes. The processing time can be increased, and the processing capacity of the whole part of the grinding module can be improved.

FIG. 14 is a schematic diagram showing a substrate processing system 1100 equipped with a partial polishing apparatus 1000 according to an embodiment. As shown in FIG. 14 , the substrate processing system 1100 includes a partial polishing apparatus 1000 , a large-diameter polishing apparatus 1200 , a cleaning apparatus 1300 , a drying apparatus 1400 , a control apparatus 900 , and a conveying apparatus 1500 . The partial polishing apparatus 1000 of the substrate processing system 1100 may be a partial polishing apparatus 1000 having any of the features described above. The large-diameter polishing apparatus 1200 is a polishing apparatus for polishing a substrate using a polishing pad having a larger area than the substrate Wf to be polished. The large diameter polishing apparatus 1200 may utilize a conventional CMP apparatus. In addition, any conventional ones can be used for the cleaning apparatus 1300, the drying apparatus 1400, and the conveying apparatus 1500. The control device 900 can be one that controls not only part of the polishing device 1000 described above, but also the operation of the entire substrate processing system 1100 . In the embodiment shown in FIG. 14 , a part of the polishing apparatus 1000 and the large-diameter polishing apparatus 1200 constitute a substrate processing system 1100 . Therefore, various polishing processes can be performed by combining the partial polishing of the partial polishing apparatus 1000, the overall polishing of the substrate Wf of the large-diameter polishing apparatus 1200, and the detection of the surface state of the substrate Wf by the state detection unit. In addition, the partial polishing of the partial polishing apparatus 1000 is not the entire surface of the substrate Wf, but only a part of it may be polished. In addition, in the partial polishing apparatus 1000 for polishing the entire surface of the substrate Wf, the polishing conditions can be changed in a part of the surface of the substrate Wf to grind.

Here, part of the polishing method of the substrate processing system 1100 is described. First, the surface state of the substrate Wf of the object to be polished is detected. The surface state is information (position, size, height, etc.) of the film thickness and surface unevenness of the film formed on the substrate Wf, and is detected by the state detection unit 420 described above. Next, a polishing recipe is prepared according to the detected surface state of the substrate Wf. Here, the polishing recipe consists of a plurality of processing steps, and the parameters in each step, for example, for some polishing apparatuses 1000 include: processing time, the contact pressure of the polishing pad 502 to the substrate Wf or the dresser 820 disposed on the dressing stage 810 , or Load, movement speed, load of the adjusting member 852 of the second adjuster 850 pressing the polishing pad 502, and moving mechanism Movement type and movement speed of 854, adjustment time, adjustment period, rotation speed of polishing pad 502 and substrate Wf, movement type and movement speed of polishing head 500, selection and flow rate of polishing pad treatment liquid, rotation speed of dressing stage 810 , Detection conditions of grinding end point. In addition, in the partial polishing, it is necessary to determine the operation of the polishing head 500 in the plane of the substrate Wf according to the information on the film thickness and the unevenness in the plane of the substrate Wf acquired by the state detection unit 420 . For example, regarding the residence time of the polishing head 500 in each area to be polished in the plane of the substrate Wf, the parameters to be determined here include, for example, a desired film thickness, a target value corresponding to the unevenness state, and the polishing rate in the above-mentioned polishing conditions. Since the polishing speed here varies depending on the polishing conditions, it can also be stored in the control device 900 as a database and automatically calculated when the polishing conditions are set. Here, the polishing rate of each parameter which becomes the basis may be acquired in advance and stored as a database. The residence time of the polishing head 500 in the plane of the substrate Wf can be calculated from these parameters and the obtained information on the film thickness and unevenness in the plane of the substrate Wf. Further, as will be described later, since the pre-measurement, partial polishing, overall polishing, and cleaning paths vary depending on the state of the substrate Wf and the processing liquid used, the transport paths for these components can also be set. In addition, the film thickness in the plane of the substrate Wf and the conditions for obtaining the concavo-convex data can also be set. In addition, if the Wf state after the treatment described later does not reach the allowable level, regrinding needs to be performed, but the processing conditions at this time (the number of repetitions of regrinding, etc.) can also be set. Then, perform partial grinding and overall grinding according to the prepared grinding formula. In addition, in this example and other examples described below, the cleaning of the substrate Wf may be performed at any time. For example, when the treatment liquids used in partial polishing and overall polishing are different, and the contamination of the treatment liquid for partial polishing to overall polishing cannot be ignored, for the purpose of preventing contamination, the substrate can also be processed after each polishing treatment of partial polishing and overall polishing. Wf wash. In addition, conversely, in the case of processing the liquid phase at the same time and when the contamination of the processing liquid is negligible, the cleaning of the substrate Wf may be performed after both partial polishing and overall polishing.

The embodiments of the present invention have been described above based on several examples, but the embodiments of the present invention described above are intended to facilitate understanding of the present invention and do not limit the present invention. The present invention can be changed and improved without departing from the gist thereof, and the present invention naturally includes the equivalents thereof. In addition, within the range where at least a part of the above-mentioned problems can be solved, or within the range where at least a part of the effects can be achieved, each element described in the scope of the patent application and the specification can be arbitrarily combined or omitted.

200‧‧‧Cleaning mechanism

202‧‧‧Cleaning head

204‧‧‧Cleaning components

206‧‧‧Cleaning head holding arm

208‧‧‧Rinse Nozzle

400‧‧‧ stage

400A‧‧‧Rotating shaft

402‧‧‧Lifting pin

404‧‧‧Locating mechanism

406‧‧‧Locating pad

408‧‧‧Inspection Department

410‧‧‧Rotary drive mechanism

500‧‧‧grinding head

502‧‧‧Polishing pad

510‧‧‧Rotating shaft

600‧‧‧holding arm

602‧‧‧Vertical drive mechanism

702‧‧‧Slurry supply nozzle

800‧‧‧Adjustment Department

810‧‧‧Trimming stage

820‧‧‧Trimmer

850‧‧‧Second regulator

852‧‧‧Adjustment elements

900‧‧‧Control device

1000‧‧‧Part of the grinding device

1002‧‧‧Base surface

Wf‧‧‧Substrate

Claims (13)

A grinding device is used for partially grinding a substrate, and has: a rotatable grinding member, the processing surface of which contacting the substrate is smaller than the substrate; an adjusting member, which is used for adjusting the aforementioned grinding member; a first pressing mechanism, which is For pressing the adjustment member against the polishing member during substrate polishing; and a control device for controlling the operation of the polishing device; wherein the control device is configured to control the first polishing member when the polishing member partially polishes the substrate Pressing mechanism; The above-mentioned grinding member is composed of any one of the following: (1) a circular plate shape or a cylindrical shape, and the central axis of the above-mentioned circular plate shape or the above-mentioned cylindrical shape is parallel to the surface of the substrate; (2) a conical shape or a cut A frustoconical shape, and the central axis of the aforementioned conical shape or the aforementioned frustoconical shape is parallel to the surface of the substrate; and (3) a spherical shape or a shape having a portion of the spherical shape; the rotational axis of the aforementioned grinding member is parallel to the substrate surface; the aforementioned control The device further controls the action of the grinding member, so that the grinding member rotates and grinds the substrate, and at the same time, the grinding member is moved parallel to the rotation axis. The polishing apparatus according to claim 1, comprising: a pressing mechanism for pressing the polishing member against the substrate; and a first driving mechanism for the polishing member to be parallel to the surface of the substrate The first direction of motion imparts motion. The polishing apparatus according to claim 2, wherein there is a second driving mechanism for adjusting the adjustment member in such a way that it has a component in a second movement direction perpendicular to the first movement direction and parallel to the surface of the substrate Give movement. The polishing apparatus of claim 3, wherein the second driving mechanism is configured to impart linear motion and/or rotational motion to the adjusting member. The polishing apparatus of claim 1, wherein the control device is configured to control the first pressing mechanism so as to perform adjustment at a predetermined period during substrate polishing. The polishing apparatus of claim 1, wherein the polishing member and the adjusting member are held by a holding arm. The grinding device of claim 1 of the scope of the application is provided with a recovery device, which is used for recovering the debris generated from the grinding member during adjustment. The polishing apparatus according to claim 7, wherein the recovery apparatus has a suction portion for suctioning and removing debris generated from the polishing member during adjustment. The grinding device of claim 7, wherein the recovery device has a scraper or a scraper, which is used to collect debris generated from the grinding member during adjustment. The polishing device according to claim 7, wherein the recovery device has: a liquid supply mechanism for cleaning the adjusted polishing member; and a liquid recovery mechanism for recovering the liquid after cleaning the polishing member . A polishing method, which is a method for polishing a substrate, comprising the steps of: pressing a polishing member whose processed surface contacting the substrate is smaller than that of the substrate against the substrate; relative motion to grind the substrate; and In the polishing substrate, the polishing member is adjusted by bringing the adjustment member into contact with the polishing member; the polishing member is configured to have any one of the following: (1) a disc shape or a cylindrical shape, and the disc shape or the cylinder The central axis of the shape is parallel to the surface of the substrate; (2) the shape of a cone or a truncated cone, and the central axis of the aforementioned conical shape or the aforementioned truncated cone is parallel to the surface of the substrate; and (3) a spherical shape or a portion having a spherical shape The rotation axis of the grinding member is parallel to the surface of the substrate; the grinding method further includes a step of rotating the grinding member and grinding the substrate, and simultaneously moving the grinding member parallel to the rotation axis. The polishing method according to claim 11 of the scope of the application, further comprising the step of imparting linear motion and/or rotational motion to the adjustment member. The grinding method according to claim 11 of the claimed scope includes the step of recovering the debris generated from the grinding member when the grinding member is adjusted.

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