JPH11320384A - Chemical machine polishing method and chemical machine polishing device using same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve flatness of a substrate to be processed and uniformity in the surface of the substrate to be processed and uniformity of a surface between the substrates to be processed. SOLUTION: This chemical machine polishing device comprises a platen; a belt-form polishing pad 32 rotatable centering around a belt form rotary shaft 44 serving as an axis; and a dresser 43 to dress the surface of the polishing pad 32. The polishing pad 32 is formed that two belt-form rotary shafts 44 are vertically arranged on the surface of a substrate 34 to be processed, and the under surface of the polishing pad 32 is forced into pressure contact with the surface of the substrate 34 to be processed. A contact area between the polishing pad 32 and the substrate 34 to be processed is smaller than the upper surface of the substrate 34 to be processed. Thus, regarding the warp and the swell of the substrate 34 to be processed, the polishing pad 32 follows the surface of the substrate 34 to be processed and flatly and uniformly polishes the interior of the surface of the substrate 34 to be processed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical device capable of improving the flatness of a substrate to be processed, the uniformity within the surface of the substrate to be processed, and the uniformity of the surface between the substrates to be processed. The present invention relates to a polishing method and a chemical mechanical polishing apparatus using the same.

[0002]

2. Description of the Related Art With the recent miniaturization of design rules for semiconductor devices, efforts have been made to increase the resolution of lithography. However, by increasing the resolution, the depth of focus (DOF (Depth Of Focus)) has been reduced. In order to improve the DOF, the performance of the resist must be improved. On the other hand, in reality, the demand for miniaturization precedes the performance improvement of the resist. Therefore, the height difference of the device structure is made as flat as possible, so that this depth of focus (DO
A method of compensating for the lack of F) and reliably resolving a fine pattern without defocusing is being studied.

As a method of flattening the height difference of the device structure, recently, CMP (Chemical Mechanical Polishing) using a mirror polishing of a silicon wafer is applied.
lishing)) method is adopted.

FIG. 5 shows a conventional chemical mechanical polishing (CMP).
It is a schematic diagram showing an apparatus. This device uses a polishing plate 3
, A dresser 14, a carrier 5 for holding, via a pad material, a substrate 4 to be processed such as a wafer on which an interlayer insulating film is formed, and a polishing slurry supply device 7. The polishing plate 3 includes a rotating polishing plate rotating shaft 1.
And a polishing pad 2 is provided on the surface of the polishing plate 3.
Are adhered. The metal plate of the dresser 14 has a diamond 1
5 is electrodeposited, and the dressing surface 1 of the surface of the polishing pad 2 is formed.
Form 3 The polishing slurry supply device 7 has a nozzle 6 for supplying the polishing slurry 10 onto the polishing pad 2.

In this chemical mechanical polishing apparatus, the polishing pad 2 is dressed (ground) by rotating the dresser 14 pressed by the pressing pressure 11 of the dress. Thereafter, the polishing plate rotating shaft 1 and the carrier rotating shaft 8 are rotated. Further, while the polishing slurry 10 is supplied from the nozzle 6 to the central portion of the polishing pad 2, the substrate to be processed 4 is pressed onto the polishing pad 2 by the polishing pressure adjusting mechanism 9 to polish the substrate to be processed 4.

[0006] In the chemical mechanical polishing apparatus, the polishing pad 2
In order to make the relative speed of the processing target substrate 4 constant with respect to the rotation speed of the carrier 5 on which the processing target substrate 4 is mounted and the polishing plate 3 to which the polishing pad 2 is adhered, it is necessary to make the same. On the other hand, in order to improve the flatness of the processing target substrate 4, it is necessary to increase the relative speed of the processing target substrate 4 with respect to the polishing pad 2. In order to increase the relative speed, the polishing pad 2 is rotated in accordance with the rotation speed of the substrate 4 to be processed.
Needs to be increased. That is, it is necessary to increase the rotation speed of the polishing plate 3 to which the polishing pad 2 is adhered.

The polishing plate 3 is formed so as not to be deformed by the pressing of the substrate 4 to be processed.
Its mass is quite large. In particular, today, as the diameter of the substrate to be processed 4 is increasing, the mass of the polishing plate 3 is getting larger. Therefore, rotating the polishing plate 3 at a high speed is not realistic because a load on a motor, a bearing, and the like connected to the polishing plate 3 increases.

Therefore, a CMP apparatus using a polishing pad (belt-type polishing pad) formed in a belt shape rotatable around a belt-shaped rotating shaft has been produced. This C
The belt-type polishing pad used in the MP apparatus is designed to cover the entire surface of the substrate to be processed. In the CMP apparatus using the belt-type polishing pad, the polishing pad can be rotated at high speed around the belt-shaped rotation axis. Therefore, the flatness of the surface of the substrate to be processed is improved.

[0009]

The substrate to be polished usually has a fine warp or a wavy warp (hereinafter referred to as "undulation"). Further, the degree of the warp or undulation differs between the substrates to be processed.
Therefore, C using the conventional belt-type polishing pad
In the MP apparatus, since the polishing pad covers the entire substrate to be processed, it cannot follow the substrate to be processed.
As a result, the inside of the surface of the substrate to be processed is not uniformly polished. In addition, there is a variation in polishing between the substrates to be processed (reproducibility deteriorates).

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object the flatness of a substrate to be processed, the uniformity of the surface of the substrate to be processed, and the purpose of the present invention. It is an object of the present invention to provide a chemical mechanical polishing method capable of improving the uniformity of the surface between them, and a chemical mechanical polishing apparatus using the same.

[0011]

In order to solve the above problems, a chemical mechanical polishing apparatus according to the present invention is provided for holding a substrate to be processed, and comprises a rotatable platen and a belt-shaped rotary shaft. A chemical mechanical polishing apparatus, comprising: a polishing pad formed in a belt shape rotatable around an axis, which presses and contacts the surface of the substrate to be processed, and dressing means for dressing the surface of the polishing pad. The contact area between the polishing pad and the substrate to be processed is smaller than the surface area on the substrate to be processed.

Since the polishing pad formed in a belt shape is used, the polishing pad can be rotated at a high speed.
Therefore, the flatness in the surface of the substrate to be processed can be improved.

The contact area between the polishing pad and the substrate to be processed is smaller than the surface area on the substrate to be processed. Therefore, even if the substrate to be processed has warpage or undulation,
Since the polishing pad can follow the surface of the substrate to be processed, the surface of the substrate to be processed can be polished flat and uniformly. Further, variation in polishing between the substrates to be processed can be suppressed, and the uniformity of the surface between the substrates to be processed can be improved.

Preferably, at least one of the width and length of the polishing pad is shorter than the diameter of the substrate to be processed. Here, the width of the polishing pad refers to the distance between the polishing pad in a direction parallel to the belt-shaped rotation axis of the polishing pad. Further, the length of the polishing pad refers to the distance of the polishing pad in the traveling direction in which the polishing pad rotates.

Preferably, the dressing means is provided on the polishing pad where the polishing pad does not contact the substrate to be processed.

The dressing means is desirably circular or rod-shaped.

Preferably, the dressing means is circular or rod-shaped, and is disposed on the polishing pad where the polishing pad does not contact the substrate to be processed.

Preferably, a plurality of the polishing pads are provided.

Further, in the chemical mechanical polishing method according to the present invention, the polishing pad formed in a belt shape rotatable around the belt-shaped rotation axis is provided on the surface of the substrate to be processed with the contact area. A first step of pressing and contacting the substrate so as to be smaller than a surface area on the substrate to be processed, and rotating the polishing pad around the belt-shaped rotation axis and rotating the substrate to be processed, thereby obtaining a chemical mechanical device. The method includes a second step of performing planarization by polishing, and a third step of repeating the second step after moving a position of the substrate to be processed relative to the polishing pad.

Therefore, the contact area between the polishing pad and the substrate to be processed is smaller than the surface area on the substrate to be processed. Therefore, even if the substrate to be processed is warped or undulated, the polishing pad can follow the surface of the substrate to be processed, so that the inside of the surface of the substrate to be processed is polished evenly and uniformly. be able to. Further, variation in polishing between the substrates to be processed can be suppressed, and the uniformity of the surface between the substrates to be processed can be improved.

Further, in the chemical mechanical polishing method according to the present invention, a plurality of polishing pads formed in a belt shape rotatable around a belt-shaped rotating shaft are provided on a surface of a substrate to be processed by a contact area thereof. The first step of pressing and contacting so as to be smaller than the surface area on the substrate to be processed, and rotating the polishing substrate while rotating these polishing pads around the belt-shaped rotation axis, And a second step of performing planarization by chemical mechanical polishing.

Since the plurality of polishing pads are rotated to perform the chemical polishing of the substrate to be processed, it is not necessary to move the position of the substrate to be processed relative to the polishing pad. Further, the surface of the substrate to be processed can be polished by one operation, so that the efficiency is improved.

[0023]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing a chemical mechanical polishing apparatus according to a first embodiment of the present invention. The chemical mechanical polishing apparatus is provided to hold a substrate to be processed 34 such as a wafer, and is formed into a rotatable surface plate (not shown) and a belt shape rotatable around a belt-shaped rotation shaft 44. And a dresser 42 that is a dressing means for dressing (polishing) the surface of the polishing pad 32.

By rotating the platen (not shown),
The substrate to be processed 34 held on the surface plate can be rotated as shown by an arrow 46. The polishing pad 32
Two belt-shaped rotating shafts 4 are provided on the surface of the substrate 34 to be processed.
4 is set up and down. In this installation state, the lower surface of the polishing pad 32 comes into pressure contact with the surface of the substrate 34 to be processed. In the case of FIG. 1, for example, the width a1 of the polishing pad 32
Are formed smaller than the diameter of the substrate 34 to be processed. Therefore, the contact portion between the polishing pad 32 and the substrate to be processed 34 has a line segment shape. The contact area of the line segment shape is smaller than the surface area on the processing target substrate 34.

The polishing pad 32 can be rotated around a belt-shaped rotating shaft 44 as indicated by an arrow 45 by driving a motor (not shown) or the like. The rotation speed of the polishing pad 32 is relatively determined in consideration of the hardness of the polishing pad 32 itself and the rotation speed of the substrate 34 so that the surface of the substrate 34 can be flattened.

On the other hand, the dresser 42
And the substrate to be processed 34 are placed on the polishing pad 32 where they do not contact. The dresser 42 has, for example, a circular shape, and rotates as shown by an arrow 48 while rotating the polishing pad 32.
Dressing surface.

Next, a chemical mechanical polishing method using the above chemical mechanical polishing apparatus will be described. The substrate to be processed 34 is previously held on a surface plate (not shown). Thereafter, a pressing pressure 39 is applied by a polishing pressure adjusting mechanism (not shown),
As shown in (2), the lower surface of the polishing pad 32 is pressed against the surface of the substrate 34 to be processed.

Next, by driving a motor (not shown), the polishing pad 32 is rotated in the direction indicated by the arrow 45 with the belt-shaped rotation shaft 44 as the axis. With this,
By driving a motor (not shown) to rotate the platen (not shown), the substrate 34 to be processed is rotated in a direction indicated by an arrow 46. Thus, chemical mechanical polishing is performed on a part of the surface of the substrate 34 to be processed.

Next, the position of the substrate 34 to be processed is moved in the direction indicated by the arrow 47 with respect to the polishing pad 32 to change the relative position between them. Thereafter, in the same manner as described above, a portion that is not polished on the surface of the substrate to be processed 34 is subjected to chemical mechanical polishing.

As described above, while changing the relative position between the polishing pad 32 and the substrate 34,
Chemical mechanical polishing is performed according to the amount of the remaining polishing film on the surface of the substrate.

Further, the progress of the polishing amount is adjusted (feedback is applied) by adjusting the pressing pressure 39 applied on the surface of the substrate 34 to be processed in accordance with the amount of the remaining polishing film.

According to the first embodiment, since the polishing pad 32 formed in a belt shape is used, the polishing pad 32 can be rotated at a high speed. Therefore, the flatness in the surface of the processing target substrate 34 can be improved.

The contact area between the polishing pad 32 and the substrate 34 is smaller than the surface area on the substrate 34. Therefore, even if the substrate to be processed 34 is warped or undulated, the polishing pad 32 has a degree of freedom of movement, so that the polishing pad 32 can follow the surface of the substrate to be processed 34. As a result, the inside of the surface of the processing target substrate 34 can be polished flat and uniformly.

That is, since the polishing pad 32 is rotated at a high speed, the flatness is improved, but the relative hardness of the polishing pad 32 to the substrate 34 is increased. For this reason, conventionally, it has been difficult for the polishing pad 32 to follow a warp or the like of the substrate 34 to be processed. However, in the present embodiment, the contact area between the polishing pad 32 and the substrate 34 is
4 The surface area is smaller than the surface area. Therefore, as a result of the polishing pad 34 being able to follow a warp or the like, the
The uniformity in the surface of the substrate to be processed 34 can be improved while improving the flatness (Global flatness) when viewing 4 in an enlarged manner. Further, it is possible to improve the uniformity of the surface between the substrates to be processed (improve the reproducibility) by suppressing the variation in polishing between the individual substrates to be processed.

While changing the relative position between the polishing pad 32 and the substrate 34, chemical mechanical polishing is performed in accordance with the amount of the remaining polishing film on the surface of the substrate 34. Therefore,
The degree of the polishing amount can be adjusted (feedback is applied) by adjusting the pressing pressure 9 in accordance with the remaining polishing film amount.

In the above embodiment, the polishing pad 32
Is formed to be smaller than the diameter of the substrate to be processed 34, but may be formed to be substantially the same as or larger than the diameter of the substrate to be processed 34.

FIG. 2 is a schematic view showing a chemical mechanical polishing apparatus according to a second embodiment of the present invention. The same members as those in the first embodiment will be described with the same reference numerals. The chemical mechanical polishing apparatus is provided to hold a substrate to be processed 34 such as a wafer, and a rotatable platen (not shown) and a belt-shaped rotary shaft 54 are provided, similarly to the first embodiment. The polishing pad 52 includes a polishing pad 52 formed in a belt shape rotatable around an axis, and a dresser 62 as dressing means for dressing the surface of the polishing pad 52.

By rotating the platen (not shown),
The substrate to be processed 34 held on the surface plate can be rotated as shown by an arrow 66. This substrate to be processed 34
The polishing pad 52 is installed with the two belt-shaped rotation shafts 54 left and right. In this installation state, the lower surface of the polishing pad 52 comes into pressure contact with the surface of the substrate 34 to be processed.

The width a2 of the polishing pad 52 is
4 is formed to be smaller than the diameter. In the case of FIG. 2, the interval b2 between the belt-shaped rotation shafts 54 is formed to be longer than the diameter of the substrate 34 to be processed, for example. Therefore, the contact portion between the polishing pad 62 and the substrate to be processed 34 has an elongated strip shape. The band-shaped contact area is smaller than the surface area on the substrate 34 to be processed.

The polishing pad 52 can rotate around the belt-shaped rotating shaft 54 as indicated by an arrow 65 by driving a motor (not shown) or the like. As in the first embodiment, the rotation speed of the polishing pad 52 may be made flat in consideration of the hardness of the polishing pad 52 itself and the rotation speed of the substrate 34. It is determined relatively to be able to.

On the other hand, the dresser 62 is
The substrate 54 is placed on the polishing pad 52 where the substrate 54 does not contact the substrate. The dresser 62 is, for example, circular and dresses the surface of the polishing pad 52 while rotating as shown by an arrow 68.

Next, a chemical mechanical polishing method using the above chemical mechanical polishing apparatus will be described. As in the first embodiment, after the substrate to be processed 34 is previously held on a surface plate (not shown), the lower surface of the polishing pad 52 is pressed against the surface of the substrate to be processed 34.

Next, by driving a motor (not shown), the polishing pad 52 is rotated in the direction indicated by the arrow 65 with the belt-shaped rotation shaft 54 as the axis. With this,
By driving a motor (not shown) to rotate the platen (not shown), the substrate 34 to be processed is rotated in the direction of arrow 66. Thus, chemical mechanical polishing is performed on a part of the surface of the substrate 34 to be processed.

Next, the position of the substrate 34 to be processed is moved in the direction of arrow 67 with respect to the polishing pad 52 to change the relative position between the two. Thereafter, chemical mechanical polishing is performed again on the unpolished portion on the surface of the substrate 34 to be processed.

In the same manner as in the first embodiment, chemical mechanical polishing is performed in accordance with the amount of the remaining polishing film on the surface of the substrate 34 to be processed while changing the relative position. hand,
By adjusting the pressing pressure (not shown) applied to the polishing pad 52, the degree of progress of the polishing amount is adjusted.

According to the second embodiment, the same effects as those of the first embodiment can be obtained.

Further, since the polishing pad 52 and the substrate 34 to be processed come into contact with each other on the belt-like surface, the polishing speed is improved as compared with the case where the contact portion is a line segment.

In the present embodiment, the interval b2 between the belt-shaped rotary shafts 54 is formed to be longer than the diameter of the substrate 34 to be processed, but the interval b2 is equal to or equal to the diameter of the substrate 34 to be processed. It may be formed shorter than the diameter.

FIG. 3 is a schematic view showing a chemical mechanical polishing apparatus according to a third embodiment of the present invention. The same members as those in the first and second embodiments will be described with the same reference numerals. The chemical mechanical polishing apparatus is similar to the chemical mechanical polishing apparatus according to the second embodiment. The chemical mechanical polishing apparatus holds a substrate 34 to be processed, and a rotatable surface plate (not shown) and a polishing pad 82 formed in a belt shape rotatable around belt-shaped rotating shafts 84 and 85. When,
The polishing pad 82 includes a dresser 92 which is a dressing means for dressing the surface of the polishing pad 82.

By rotating the platen (not shown),
The substrate to be processed 34 held on the surface plate can be rotated in the direction of arrow 96. On the surface of the substrate 34, the polishing pad 82 is provided with four belt-shaped rotating shafts 84,8.
5 is installed facing left and right. Belt-shaped rotating shaft 85
By changing the interval b3, the size of the surface where the substrate to be processed 34 and the polishing pad 82 come into contact can be changed. In the installation state according to the third embodiment, the lower surface of the polishing pad 82 within the interval b3 of the belt-shaped rotation shaft 85 comes into pressure contact with the surface of the substrate 34 to be processed.

The width a3 of the polishing pad 82 is
4 compared to the diameter of 4. The interval b3 between the belt-shaped rotary shafts 85 is set shorter than the diameter of the substrate 34 to be processed. The interval between the belt-shaped rotating shafts 84 may be smaller than the diameter of the substrate 34 to be processed, substantially the same as the diameter, or larger than the diameter.

In the case of the present embodiment, the contact portion between the polishing pad 82 and the substrate 34 to be processed is rectangular. The square contact area is smaller than the surface area on the substrate 34 to be processed.

The polishing pad 82 can be rotated around belt-like rotating shafts 84 and 85 in the direction of arrow 95 by driving a motor or the like (not shown). As in the first and second embodiments, the rotation speed of the polishing pad 82 is determined by taking the hardness of the polishing pad 82 itself and the rotation speed of the substrate 34 into consideration to make the surface of the substrate 34 flat. Are determined relatively so that they can be

The dresser 92 is placed on the polishing pad 82 where the polishing pad 82 and the substrate 34 do not contact. The dresser 92 is, for example, circular and dresses the surface of the polishing pad 82 while rotating in the direction of arrow 98.

Next, a chemical mechanical polishing method using the chemical mechanical polishing apparatus will be described. As in the case of the first and second embodiments, the substrate to be processed 34 is held on a surface plate (not shown) in advance.

Next, the belt-shaped rotating shaft 8 of the polishing pad 82
5 is set to a desired length, and then the substrate 3
4 is pressed against the surface.

Next, by driving a motor (not shown), the polishing pad 82 is rotated in a direction indicated by an arrow 95 with the belt-shaped rotating shafts 84 and 85 as axes. At the same time, by driving a motor (not shown) to rotate the platen (not shown), the substrate 34 to be processed is rotated in the direction of arrow 96. Thus, chemical mechanical polishing is performed on a part of the surface of the substrate 34 to be processed.

Next, the position of the substrate 34 to be processed is moved in the direction of arrow 97 with respect to the polishing pad 82 to change the relative position between them. Thereafter, chemical mechanical polishing is performed again on the unpolished portion on the surface of the substrate 34 to be processed. While changing the relative position, chemical mechanical polishing is performed in accordance with the amount of the remaining polishing film on the surface of the substrate 34 to be processed, and the pressing pressure (not shown) applied to the polishing pad 82 is adjusted to advance the polishing amount. Adjust the degree of

According to the third embodiment, the same effects as those of the first and second embodiments can be obtained.

Further, by changing the interval b3 between the belt-shaped rotating shafts 85, the size of the surface where the substrate 34 to be processed contacts the polishing pad 82 can be freely changed.

Next, a chemical mechanical polishing apparatus according to a fourth embodiment of the present invention will be described. The chemical mechanical polishing apparatus holds a substrate to be processed, such as a wafer, and a rotatable platen (not shown), and a plurality of not-shown belts formed to be rotatable around a belt-shaped rotation axis. Polishing pad and
It generally comprises a dresser which is a dressing means for dressing (polishing) the surface of the polishing pad.

More specifically, the fourth embodiment is realized by, for example, installing a plurality of polishing pads 32, 52, and 82 in each of the above embodiments. The plurality of polishing pads may be installed on the surface of the substrate to be processed with two belt-shaped rotation axes oriented vertically, or with two or four belt-shaped rotation axes oriented horizontally. May be installed.
In particular, when two or four belt-shaped rotating shafts are installed in the left-right direction, it is desirable that the length of the polishing pad be smaller than the diameter of the substrate to be processed. In this case, the width of the polishing pad may be larger or smaller than the diameter of the substrate to be processed.

In these installation states, the lower surface of each of the polishing pads comes into pressure contact with the surface of the substrate to be processed. The contact area between each polishing pad and the substrate to be pressed and contacted is smaller than the surface area on the substrate to be processed.

Each of the polishing pads can be rotated around a belt-shaped rotation axis of the polishing pad by driving a motor (not shown) connected to the polishing pad. The rotation speed of each of the polishing pads is:
In consideration of the hardness of the polishing pad itself and the rotation speed of the substrate to be processed, it is relatively determined so that the surface of the substrate to be processed can be made flat.

On the other hand, the dresser is installed on each of the polishing pads where the polishing pad and the substrate to be processed do not contact each other. These dressers may be, for example, circular or rod-shaped. These dressers rotate and dress the surface of each of the polishing pads.

Next, a chemical mechanical polishing method using the chemical mechanical polishing apparatus will be described. The substrate to be processed is previously held on a surface plate (not shown). Thereafter, a pressing pressure is applied by a polishing pressure adjustment mechanism (not shown), and the lower surfaces of the plurality of polishing pads are brought into contact with and pressed against the surface of the substrate to be processed.

Next, by driving a motor (not shown), the respective polishing pads are simultaneously rotated about the belt-shaped rotation axis. At the same time, by driving a motor (not shown) to rotate the platen (not shown),
The substrate to be processed is rotated to perform chemical mechanical polishing on the surface of the substrate to be processed. It should be noted that the degree of progress of the polishing amount is adjusted (feedback is applied) by adjusting the pressing pressure applied on the surface of the substrate to be processed in accordance with the amount of the remaining polishing film.

According to the fourth embodiment, the same effects as those of the first to third embodiments can be obtained.

Further, since the plurality of polishing pads are rotated to perform the chemical polishing of the substrate to be processed, it is not necessary to change the relative position of the substrate to be processed with respect to the polishing pad. Further, the surface of the substrate to be processed can be polished with a single setting, thereby increasing the efficiency.

In each of the above embodiments, the dressers 42, 62 and 92 are formed in a circular shape, but may be formed in an elongated rod shape like the dresser 112 shown in FIG. In this case, the dresser 112 rotates in the direction indicated by the arrow 108 while polishing pads 32, 52, 8.
2 Dressing on top.

The polishing pads 32, 52, 82, the dressers 42, 62, 92, 112, and the substrate 34
The rotation direction is not limited to the above embodiments, and may be rotated in any direction.

After the polishing pads 32, 52 and 82 and the substrate 34 are brought into contact with each other and pressed, the two are rotated.
You may make it contact-press both, rotating each first.

[0073]

As described above, according to the present invention, the flatness of the substrate to be processed, the uniformity within the surface of the substrate to be processed, and the uniformity of the surface between the substrates to be processed are improved. .

[Brief description of the drawings]

FIG. 1 is a schematic view showing a chemical mechanical polishing apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic view of a chemical mechanical polishing apparatus according to a second embodiment of the present invention.

FIG. 3 is a schematic view of a chemical mechanical polishing apparatus according to a third embodiment of the present invention.

FIG. 4 is a schematic view of a chemical mechanical polishing apparatus having a bar-shaped dresser, similar to the second embodiment of the present invention.

FIG. 5 is a schematic view of a conventional chemical mechanical polishing (CMP) apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Polishing plate rotating shaft, 2, 32, 52, 82 ... Polishing pad, 3 ... Polishing plate, 4, 34 ... Substrate to be processed, 5
... Carrier, 6 ... Nozzle, 7 ... Abrasive slurry supply device,
8 Carrier rotating shaft, 9 Polishing pressure adjusting mechanism, 10 Slurry, 11 Dressing pressure, 12 Pad material, 13 Target surface of polishing pad, 14, 42, 62,
92, 112: dresser, 15: die, 39: pressing pressure, 44, 54, 84, 85: belt-shaped rotating shaft,
45, 46, 47, 48, 65, 66, 67, 68, 9
5, 96, 97, 98, 108 ... arrows.

Claims (8)

[Claims] A substrate provided to hold a substrate to be processed;
A rotatable surface plate, a polishing pad formed in a rotatable belt shape with a belt-shaped rotation axis as an axis, and pressing and contacting the surface of the substrate to be processed, and dressing means for dressing the surface of the polishing pad A chemical mechanical polishing apparatus comprising: a polishing apparatus; and a contact area between the polishing pad and the substrate to be processed is smaller than a surface area on the substrate to be processed. 2. The chemical mechanical polishing apparatus according to claim 1, wherein at least one of a width and a length of the polishing pad is shorter than a diameter of the substrate to be processed. 3. The chemical mechanical polishing apparatus according to claim 1, wherein the dressing means is provided on the polishing pad where the polishing pad does not contact the substrate to be processed. 4. The chemical mechanical polishing apparatus according to claim 1, wherein said dressing means has a circular shape or a rod shape. 5. The chemical treatment according to claim 1, wherein the dressing means has a circular shape or a rod shape, and is disposed on the polishing pad where the polishing pad and the substrate to be processed do not come into contact with each other. Mechanical polishing equipment. 6. The chemical mechanical polishing apparatus according to claim 1, wherein a plurality of the polishing pads are provided. 7. A polishing pad formed in a belt shape rotatable around a belt-shaped rotation axis, and a contact area on a surface of a substrate to be processed is smaller than a surface area on the substrate to be processed. A polishing step, and a second step of rotating the polishing pad about the belt-shaped rotation axis and rotating the substrate to perform chemical mechanical polishing, and the polishing pad. A third step of repeating the second step after moving the relative position of the substrate to be processed with respect to the third step. 8. A plurality of polishing pads formed in a belt shape rotatable around a belt-shaped rotation axis by contacting a plurality of polishing pads on a surface of a substrate to be processed with a contact area larger than a surface area on the substrate to be processed. A first step of pressing and contacting to reduce the size, and a second step of rotating these polishing pads around the belt-shaped rotation axis and rotating the substrate to be processed to perform chemical mechanical polishing, A chemical mechanical polishing method comprising: