TW201834786A - Substrate polishing device and substrate polishing method - Google Patents

Abstract

The present invention addresses the problem of providing a polishing device capable of maintaining a polishing member in an excellent state while polishing is performed. Provided is a polishing device for locally polishing a substrate. The polishing device has: a polishing member having a machining surface that is smaller than the substrate, said machining surface being to be in contact with the substrate; a conditioning member for conditioning the polishing member; a first pressing mechanism for pressing the conditioning member to the polishing member while the substrate is being polished; and a control device for controlling the operations of the polishing device. The control device is configured to control the first pressing mechanism while the substrate is being locally polished by means of the polishing member.

Description

 Substrate polishing device and polishing method  

The present invention relates to a polishing apparatus and a polishing method for a substrate.

In recent years, a processing apparatus has been used to perform various processes on a processing object (for example, a substrate such as a semiconductor substrate or a film formed on the surface of the substrate). An example of the processing apparatus is a CMP (Chemical Mechanical Polishing) apparatus for performing a polishing process or the like of the object to be processed.

The CMP apparatus includes: a polishing unit for performing a polishing process on the object to be processed; a cleaning unit for performing a cleaning process and a drying process on the object to be processed; and delivering the object to be processed to the polishing unit, and receiving the object by washing The clean unit performs a washing process and a loading/unloading unit of the object to be processed after the drying process. Further, the CMP apparatus further includes a transport mechanism that transports the object to be processed in the polishing unit, the cleaning unit, and the loading/unloading unit. The CMP apparatus transports the object to be processed by the transport mechanism, and sequentially performs various processes of polishing, washing, and drying.

Recently, the accuracy required for each process in the manufacture of semiconductor devices has reached the order of several nm, and CMP is no exception. In order to meet this requirement, CMP optimizes polishing and cleaning conditions. However, even if the optimum conditions are determined, the polishing and cleaning performance cannot be prevented from changing due to control variations of the components and changes in the consumables over time. Further, there is a variation in the semiconductor substrate itself to be processed, and for example, the film thickness and the element shape of the film formed on the object to be processed before CMP are different. These deviations are caused by the incompleteness of the deviation of the residual film and the step difference after the CMP and after the CMP, and even in the film which should be completely removed by the polishing, the film remains in the form of residual film. Such variations occur between the wafers and between the wafers in the plane of the substrate, and even between the substrates and between batches. At present, the processing method for suppressing such variations within a certain threshold is to control the polishing conditions on the substrate during polishing and the substrate before polishing (for example, the pressure distribution in the surface of the substrate during polishing and the number of revolutions of the substrate holding stage) , slurry), and/or secondary processing (re-grinding) of substrates above the threshold.

However, since the above-described effect of suppressing the variation by the polishing conditions mainly appears in the radial direction of the counter substrate, it is difficult to adjust the deviation in the circumferential direction of the substrate. Further, depending on the processing conditions at the time of CMP and the lower layer state of the film polished by CMP, variations in the distribution of the local polishing amount occur in the substrate surface. Further, regarding the control of the polishing distribution in the radial direction of the substrate in the CMP process, the element region in the substrate surface needs to be enlarged from the viewpoint of the recent improvement in yield, and it is necessary to adjust the polishing distribution to the edge portion of the substrate. The edge portion of the substrate is affected by the variation of the polishing pressure distribution and the slurry inflow of the abrasive material, which is larger than the vicinity of the center of the substrate. The control of the polishing conditions and the cleaning conditions and the secondary processing are basically performed by a polishing unit that performs CMP. At this time, the polishing pad is almost completely in contact with the substrate surface. However, even if a part is in contact, it is necessary to increase the contact area between the polishing pad and the substrate from the viewpoint of maintaining the processing speed. In such a case, for example, in a specific region in the plane of the substrate, even if a deviation exceeding the threshold value occurs, the correction is performed by secondary processing or the like, because the contact area is large, even if the portion that does not require secondary processing is still Perform grinding. As a result, it is difficult to correct the scope of the original requirements. Therefore, it is required to provide a structure and a device and a device for performing control of processing conditions and secondary processing at any position in the substrate surface while controlling the polishing and cleaning states in a smaller area.

The fifteenth diagram shows a schematic configuration diagram of an example of a partial polishing apparatus 1000 that performs polishing processing using a polishing pad having a smaller diameter than the object to be processed. In the partial polishing apparatus 1000 shown in Fig. 15, a polishing pad 502 having a diameter smaller than that of the substrate Wf of the object to be processed is used. As shown in Fig. 15, the partial polishing apparatus 1000 includes a stage 400 on which the substrate Wf is provided, a polishing head 500 on which the polishing pad 502 for processing the processed surface of the substrate Wf is attached, and an arm 600 that holds the polishing head 500. a treatment liquid supply system 700 for supplying a treatment liquid; and an adjustment unit 800 for performing adjustment (shaping) of the polishing pad 502. The overall action of the partial polishing apparatus 1000 is controlled by the control unit 900. The partial polishing apparatus shown in FIG. 15 can supply DIW (pure water), cleaning liquid, and slurry slurry to the substrate from the processing liquid supply system 700, and by rotating the polishing pad 502 and pressing the substrate. To partially polish the substrate.

As shown in the fifteenth diagram, the polishing pad 502 is smaller in size than the substrate Wf. Here, the diameter Φ of the polishing pad 502 is equal to or smaller than the deviation area of the film thickness and shape of the object to be processed. For example, the diameter Φ of the polishing pad 502 is 50 mm or less, or Φ 10 to 30 mm. Since the larger the diameter of the polishing pad 502, the smaller the area ratio to the substrate, the polishing rate of the substrate increases. In addition, the grinding precision of the desired processing area is, on the contrary, the smaller the diameter of the polishing pad, the higher the precision. The smaller the diameter of the polishing pad, the smaller the unit processing area.

When the substrate Wf is partially polished in the partial polishing apparatus 1000 shown in Fig. 15, the polishing pad 502 is rotated about the rotation axis 502A, and the polishing pad 502 is pressed against the substrate Wf. At this time, the arm 600 can also be shaken in the radial direction of the substrate Wf. Further, the stage 400 may be rotated about the rotation shaft 400A. Further, the adjustment unit 800 includes a dressing stage 810 that holds the trimmer 820. The dressing stage 810 is rotatable about the rotation axis 810A. In the partial polishing apparatus 1000 of the fifteenth aspect, the polishing pad 502 can be adjusted by pressing the polishing pad 502 against the finisher 820 and rotating the polishing pad 502 and the dresser 820. In the partial polishing apparatus 1000 shown in Fig. 15, the rotation speed of the stage 400, the rotation speed of the polishing pad 502, the pressing force of the polishing pad 502, the shaking speed of the arm 600, and the processing liquid are controlled by the control unit 900. The supply of the treatment liquid supply system 700, the processing time, and the like can partially polish any region on the substrate Wf.

[Previous Technical Literature]

[Patent Document 1] US Patent Application Publication No. 2015/0352686

In general, when a polishing member such as a polishing pad is pressed against a substrate to polish the substrate, fine particles in the polishing liquid and fine particles of the cutting substrate adhere to the polishing member to cause clogging. When the polishing member is clogged, the polishing rate and the distribution in the surface of the substrate Wf change. Therefore, in order to eliminate the clogging of the polishing member and maintain the polishing member in an optimum state, it is necessary to adjust as described above. The adjustment is performed after the completion of the polishing of one substrate until the next substrate is polished. In the partial polishing apparatus 1000 shown in Fig. 15, since the contact area of the polishing pad 502 and the substrate Wf is small, clogging of the polishing pad 502 occurs during polishing, which is faster than when a polishing apparatus using a large polishing pad is used. Therefore, in the polishing apparatus using the small polishing member, the polishing rate during polishing and the distribution in the surface of the substrate Wf are likely to change when the polishing apparatus using the large polishing member is used. Thus, in a partial polishing apparatus using a small abrasive member, the abrasive member should be maintained in a good state during polishing.

It is an object of the present application to provide a polishing apparatus in which an abrasive member can maintain a good condition during polishing.

[Form 1] Aspect 1 provides a polishing apparatus for partially polishing a substrate, the polishing apparatus having: a polishing member having a processing surface that is smaller than a substrate; and an adjustment member for adjusting the polishing member; a pressing mechanism for pressing the adjusting member to the polishing member during substrate polishing; and a control device for controlling the operation of the polishing device; wherein the control device is configured to partially polish the substrate when the polishing member is partially polished The aforementioned first pressing mechanism is controlled. When the substrate is polished by the polishing member using the polishing member of the first embodiment, the polishing member can be simultaneously adjusted. Thus, the abrasive member can maintain a good state during grinding.

[Form 2] The polishing apparatus of the aspect 1 includes: a pressing mechanism for pressing the polishing member against the substrate; and a first driving mechanism for using the substrate in the polishing member The first direction of motion parallel to the surface imparts motion.

[Form 3] Form 3 has a second drive mechanism in the polishing apparatus of Form 2, which is configured to have a component in a second movement direction perpendicular to the first movement direction and parallel to the substrate surface. The adjustment member imparts motion.

[Form 4] Aspect 4 is the polishing apparatus of the aspect 3, wherein the second drive mechanism is configured to impart linear motion and/or rotational motion to the adjustment member.

[Aspect 5] The polishing apparatus according to any one of Aspects 1 to 4, wherein the control device is configured to control the first pressing mechanism such that the adjustment is performed at a predetermined cycle during substrate polishing.

[Aspect 6] In the polishing apparatus according to any one of Aspects 1 to 5, the polishing member and the adjustment member are held by the holding arm.

[Form 7] In the polishing apparatus of any one of Aspects 1 to 6, the recovery apparatus is provided for collecting the debris generated from the polishing member at the time of adjustment.

[Aspect 8] In the polishing apparatus of the seventh aspect, the recovery device includes a suction portion that sucks and removes debris generated from the polishing member at the time of adjustment.

[Aspect 9] The ninth aspect is the polishing apparatus of the aspect 7, wherein the recovery device has a scraper or a scraper for collecting debris generated from the polishing member at the time of adjustment.

[Aspect 10] The polishing apparatus according to any one of Aspects 7 to 9, wherein the recovery device includes a liquid supply mechanism for cleaning the adjusted polishing member, and a liquid recovery mechanism. The liquid after washing the polishing member is recovered.

[Aspect 11] The polishing apparatus according to any one of Aspects 1 to 10, wherein the polishing member has any one of the following: (1) a disk shape or a cylindrical shape, and the disk shape or The central axis of the cylindrical shape is parallel to the surface of the substrate; (2) a circular plate shape, and the central axis of the shape of the circular plate is inclined from a direction perpendicular to the surface of the substrate; (3) a conical shape or a conical shape, and the aforementioned conical shape The shape or the central axis 4 of the aforementioned conical shape is parallel to the surface of the substrate; (4) a spherical shape or a shape having a portion of a spherical shape; and (5) a belt member.

[Form 12] Aspect 12 provides a method of polishing a substrate, wherein the polishing method has a step of pressing a polishing member having a processing surface that is in contact with the substrate smaller than the substrate to the substrate; and pressing the polishing member against the substrate The polishing member moves relative to the substrate to polish the substrate; and in the polishing substrate, the adjustment member is brought into contact with the polishing member to adjust the polishing member. When the substrate is polished by the polishing member by the polishing method of the form 12, the polishing member can be simultaneously adjusted. Thus the abrasive member can maintain a good condition during grinding.

[Form 13] The form 13 is a step of imparting a linear motion and/or a rotational motion to the adjustment member in the polishing method of the aspect 12.

[Form 14] The form 14 is a step of recovering the scrap generated from the polishing member at the time of adjusting the polishing member in the polishing method of the form 12 or the form 13.

200‧‧‧cleaning agency

202‧‧‧ Washing head

204‧‧‧Washing components

206‧‧‧Washing head holding arm

208‧‧‧ rinse nozzle

300‧‧‧Recycling device

302‧‧‧Attraction

304‧‧‧Attraction pathway

306‧‧‧Scraper

308‧‧‧Support members

310‧‧‧Liquid supply mechanism

312‧‧‧Liquid recovery agency

314‧‧‧Liquid discharge department

400‧‧‧stage

400A‧‧‧Rotary axis

402‧‧‧lifting pin

404‧‧‧ Positioning agency

406‧‧‧ Positioning pad

408‧‧‧Detection Department

410‧‧‧Rotary drive mechanism

420‧‧‧State Detection Department

500‧‧‧ polishing head

502‧‧‧ polishing pad

502A‧‧‧Rotary axis

502B‧‧‧grinding belt components

504‧‧‧First holding member

506‧‧‧Second holding member

508‧‧ ‧ sales guide

510‧‧‧Rotary shaft

520‧‧‧Support members

522‧‧‧Rotating mechanism

600‧‧‧ Keep arm

602‧‧‧Vertical drive mechanism

620‧‧‧Horizontal drive mechanism

700‧‧‧Processing fluid supply system

702‧‧‧ polishing liquid supply nozzle

710‧‧‧Supply source

800‧‧‧Adjustment Department

810‧‧‧Finishing stage

810A‧‧‧Rotary axis

820‧‧‧Finisher

850‧‧‧Second adjuster

852‧‧‧Adjustment components

852A‧‧‧Rotary axis

854‧‧‧Mobile agencies

856‧‧‧ shaking mechanism

858‧‧‧Support members

860‧‧‧ concave shape

900‧‧‧Control device

1000‧‧‧Partial grinding device

1002‧‧‧Base surface

1100‧‧‧Substrate processing system

1200‧‧‧ Large diameter grinding device

1300‧‧‧cleaning device

1400‧‧‧Drying device

1500‧‧‧Transporting device

Wf‧‧‧ substrate

The first drawing shows a schematic configuration of a partial polishing apparatus of one embodiment.

The second figure shows an overview of the mechanism for maintaining the polishing 502 of the polishing head of one embodiment.

The third figure is a perspective view schematically showing an example of a second adjuster that can be used in a partial polishing apparatus according to an embodiment.

Fig. 4 is a perspective view schematically showing an example of a second adjuster that can be used in a partial polishing apparatus according to an embodiment.

Fig. 5 is a side view schematically showing an example of a polishing head and a second regulator which can be used in a partial polishing apparatus according to an embodiment.

Fig. 6 is a side view schematically showing an example of a polishing head and a second regulator which can be used in a partial polishing apparatus according to an embodiment.

Fig. 7 is a side view schematically showing an example of a polishing head and a second regulator which can be used in a partial polishing apparatus according to an embodiment.

Fig. 8 is a side view schematically showing an example of a polishing head and a second regulator which can be used in a partial polishing apparatus according to an embodiment.

The ninth diagram is a view from the direction of the arrow 9 in the eighth diagram.

The tenth diagram schematically shows a side view of a recovery apparatus of one embodiment.

The eleventh drawing schematically shows a side view of a recovery apparatus of one embodiment.

Fig. 12 is a side view schematically showing a recovery apparatus of an embodiment.

Fig. 13A is a view showing an example of a control circuit for processing information on film thickness, unevenness, and height of a substrate according to an embodiment.

Fig. 13B is a circuit diagram showing a state in which the state detecting portion of the substrate surface is divided from the partial polishing control portion shown in Fig. 13A.

Fig. 14 is a schematic view showing a substrate processing system of a partial polishing apparatus according to an embodiment.

The fifteenth diagram is a schematic configuration diagram showing an example of a partial polishing apparatus for performing a polishing treatment using a polishing pad having a smaller diameter than the object to be processed.

Hereinafter, embodiments of a part of the polishing apparatus of the present invention will be described with reference to the drawings. In the drawings, the same or similar reference numerals are given to the same or similar elements, and the repeated description of the same or similar elements is omitted in the description of the various embodiments. Further, the features shown in the various embodiments can be applied to other embodiments as long as they do not contradict each other.

The first drawing shows a schematic configuration of a part of the polishing apparatus 1000 of one embodiment. As shown in the first figure, a partial polishing apparatus 1000 is formed on the base surface 1002. The partial polishing apparatus 1000 may be configured as a separate apparatus, or may be a module including a part of the substrate processing system 1100 of the large-diameter polishing apparatus 1200 using a large-diameter polishing pad together with the partial polishing apparatus 1000. Composition (refer to Figure 14). The partial polishing apparatus 1000 is disposed in a casing (not shown). The casing is provided with an exhaust mechanism (not shown), and the polishing liquid or the like is not exposed to the outside of the casing during the polishing process.

As shown in the first figure, the partial polishing apparatus 1000 is provided with a stage 400 that holds the substrate Wf upward. In one embodiment, the substrate Wf can be placed on the stage 400 by a transfer device (not shown). The partial polishing apparatus 1000 shown in the drawing includes four lift pins 402 that are movable up and down around the stage 400. When the lift pins 402 are raised, the substrate Wf can be received from the transfer device on the four lift pins 402. After the substrate Wf is loaded on the lift pins 402, the lift pins 402 are lowered to the position where the substrates are delivered to the stage 400, and the substrate Wf is temporarily placed on the stage. Thus, the substrate Wf can be positioned in a region limited by the inside of the four lift pins 402. However, when high-precision positioning is further required, the substrate Wf may be additionally positioned at a predetermined position on the stage 400 by the positioning mechanism 404. In the embodiment shown in the first figure, the substrate Wf can be positioned with the positioning pad 406 by a positioning pin (not shown). The positioning mechanism 404 includes a positioning pad 406 that is movable in the direction of the plane of the substrate Wf, and has a plurality of positioning pins (not shown) on the opposite side of the positioning pad 406 with the stage 400 interposed therebetween. When the substrate W is loaded on the lift pin 402, the positioning pad 406 is pressed against the substrate Wf, and the positioning of the substrate Wf can be performed by the positioning pad 406 and the positioning pin. After the substrate Wf is positioned, the substrate Wf is fixed to the stage 400, and then the lift pins 402 are lowered, and the substrate Wf can be placed on the stage 400. The stage 400 may be, for example, fixed to the stage 400 by vacuum suction. The partial polishing apparatus 1000 includes a detecting unit 408. The detecting unit 408 is for detecting the position of the substrate Wf placed on the stage 400. For example, the groove formed on the substrate Wf, the orientation flat, or the outer peripheral portion of the substrate is detected, and the position of the substrate Wf on the stage 400 can be detected. With reference to the position of the groove or orientation plane, any point of the substrate Wf can be specified, whereby the desired portion of the area can be ground. Further, since the position information (for example, the offset amount to the ideal position) of the substrate Wf on the stage 400 can be obtained from the position information of the outer peripheral portion of the substrate, the control device 900 can also correct the moving position of the polishing pad 502 based on the information. Further, when the substrate Wf is detached from the stage 400, the lift pins 402 are moved from the stage 400 to the substrate receiving position, and then the vacuum suction of the stage 400 is released. Then, after the lift pin 402 is raised and the substrate Wf is moved to a position where the substrate is delivered to the transport device, the transport device (not shown) can receive the substrate Wf on the lift pin 402. Then, the substrate Wf can be transported to any position for subsequent processing by the transfer device.

The stage 400 of the partial polishing apparatus 1000 is provided with a rotation drive mechanism 410, and is configured to be rotatable about the rotation axis 400A and/or angular rotation. In the present specification, "rotation" means continuous rotation in a certain direction, and "angle rotation" means movement in a circumferential direction within a specified angle range (including reciprocating motion). Further, another embodiment of the stage 400 may be a moving mechanism including a linear motion for holding the substrate Wf. In this specification, "linear motion" means moving in a specified linear direction, and also includes linear reciprocating motion.

The partial polishing apparatus 1000 shown in the first figure is provided with a polishing head 500. The polishing head 500 holds the polishing pad 502. The second figure shows an overview of the mechanism for holding the polishing pad 502 of the polishing head 500. As shown in the second figure, the polishing head 500 includes a first holding member 504 and a second holding member 506. The polishing pad 502 is held between the first holding member 504 and the second holding member 506. As shown, the first holding member 504, the polishing pad 502, and the second holding member 506 are all in the shape of a circular plate. The diameters of the first holding member 504 and the second holding member 506 are smaller than the diameter of the polishing pad 502. Therefore, the polishing pad 502 is exposed from the edges of the first holding member 504 and the second holding member 506 in a state where the polishing pad 502 is held by the first holding member 504 and the second holding member 506. Further, the first holding member 504, the polishing pad 502, and the second holding member 506 each have an opening at the center, and the rotating shaft 510 is inserted into the opening. One or a plurality of guide pins 508 protruding from the side of the polishing pad 502 are provided on the surface of the first holding member 504 on the side of the polishing pad 502. Further, a through hole is formed in the polishing pad 502 at a position corresponding to the guide pin 508, and a recess for accommodating the guide pin 508 is formed on the surface of the second holding member 506 on the side of the polishing pad 502. Therefore, when the first holding member 504 and the second holding member 506 are rotated by the rotating shaft 510, the polishing pad 502 can rotate integrally with the holding members 504 and 506 without sliding. Further, the polishing pad 502 is made of a material of a commercially available CMP pad.

In the embodiment shown in the first embodiment, the polishing head 500 holds the polishing pad 502 such that the side surface of the disk shape of the polishing pad 502 faces the substrate Wf. Further, the shape of the polishing pad 502 is not limited to the shape of a circular plate, and polishing pads of other shapes may be used. The partial polishing apparatus 1000 shown in the first figure is provided with a holding arm 600 that holds the polishing head 500. The holding arm 600 is provided with a first driving mechanism for imparting motion to the substrate Wf in the first moving direction in the polishing pad 502. Here, the "first moving direction" is a motion for polishing the polishing pad 502 of the substrate Wf, and is a rotational motion of the polishing pad 502 in the partial polishing apparatus 1000 of the first drawing. Thus, the first drive mechanism can be constituted, for example, by a general motor. Since the polishing pad 502 is moved in parallel with the surface of the substrate Wf (the tangential direction of the polishing pad 502; the y direction in the first figure) at the portion where the substrate Wf is in contact with the polishing pad 502, even if the polishing pad 502 is rotated, The "first direction of motion" can still be regarded as a certain linear direction.

In the partial polishing apparatus 1000 shown in the fifteenth embodiment, the polishing pad 502 has a disk shape, and the rotation axis is perpendicular to the surface of the substrate Wf. Therefore, as described above, a linear velocity distribution is generated in the radial direction of the polishing pad 502, and a polishing velocity distribution is generated in the radial direction of the polishing pad 502. Therefore, in the partial polishing apparatus 1000 shown in Fig. 15, the deviation of the unit processing mark shape corresponding to the contact area of the polishing pad 502 and the substrate Wf with respect to the specified shape becomes large. However, in the partial polishing apparatus 1000 shown in the first figure, the rotation axis of the polishing pad 502 is parallel to the surface of the substrate Wf, and the linear velocity is constant in the contact area between the polishing pad 502 and the substrate Wf. Therefore, in the partial polishing apparatus 1000 according to the embodiment of the first embodiment, the variation in the polishing speed from the linear velocity distribution in the contact region between the polishing pad 502 and the substrate Wf is higher than that of the partial polishing apparatus 1000 shown in the fifteenth diagram. small. Therefore, in the partial polishing apparatus 1000 of the first drawing, the deviation of the unit processing mark shape from the specified shape is reduced. Further, in the partial polishing apparatus 1000 shown in the first figure, since the rotation axis of the polishing pad 502 is parallel to the surface of the substrate Wf, unlike the case of the partial polishing apparatus 1000 shown in the fifteenth diagram, the polishing pad 502 and the substrate Wf are different. The miniaturization of the contact area is easy. Since the contact area of the polishing pad 502 and the substrate Wf can be miniaturized, for example, increasing the diameter of the polishing pad 502 can increase the relative linear velocity of the polishing pad 502 and the substrate Wf, thereby increasing the polishing speed. Further, the contact area of the polishing pad 502 and the substrate Wf is determined by the diameter and thickness of the polishing pad 502. As an example, the polishing pad 502 may have a diameter Φ of about 50 mm to about 300 mm, and the polishing pad 502 may have a thickness of about 1 mm to about 10 mm.

In one embodiment, the first drive mechanism can change the rotational speed of the polishing pad 502 during polishing. The polishing speed can be adjusted by changing the rotation speed, so that even if the amount of polishing of the processed region on the substrate Wf is large, the polishing can be performed efficiently. Further, for example, in the polishing, even if the wear of the polishing pad 502 is large and the diameter of the polishing pad 502 changes, the polishing speed can be maintained by adjusting the rotation speed. Further, in the embodiment shown in the first embodiment, the first drive mechanism applies a rotational motion to the disk-shaped polishing pad 502. However, in other embodiments, the shape of the polishing pad 502 may be other shapes. The first drive mechanism may also constitute a linear motion to the polishing pad 502. In addition, the linear motion also includes a round-trip motion.

The partial polishing apparatus 1000 shown in the first figure is provided with a vertical drive mechanism 602 that moves the holding arm 600 in a direction perpendicular to the surface of the substrate Wf (in the z direction in the first drawing). The polishing head 500 and the polishing pad 502 are movable by the vertical driving mechanism 602 together with the holding arm 600 in a direction perpendicular to the surface of the substrate Wf. The vertical drive mechanism 602 also functions as a pressing mechanism for pressing the polishing pad 502 on the substrate Wf when the substrate Wf is partially polished. In the embodiment shown in the first embodiment, the vertical drive mechanism 602 is a mechanism using a motor and a ball screw. However, other embodiments may be a pneumatic or hydraulic drive mechanism or a spring drive mechanism, or may be combined. . For example, constant pressure control of a combination of an air cylinder and a precision regulator, constant pressure control of a combination of an air cylinder and an elastomer (spring, etc.), open circuit control of an air cylinder and an electric pressure regulating valve, air cylinder and electric pressure regulation The combination of the closed loop control, the air cylinder and the electric pressure regulating valve using the pressure value from the external pressure sensor in the combination of the valve is used in the combination of closed loop control, servo motor and ball screw using the load value from the load sensor. Closed loop control of load values from load cells, etc. Further, in one embodiment, the vertical drive mechanism 602 for the polishing head 500 may use a drive mechanism different from the coarse motion and the micro motion. For example, the drive mechanism for the coarse motion may be a drive mechanism that uses the motor to drive the polishing pad 502 to press the substrate Wf, and the drive mechanism that uses the air cylinder. At this time, by monitoring the pressing force of the polishing pad 502 and adjusting the air pressure in the air cylinder, the pressing force of the polishing pad 502 against the substrate Wf can be controlled. In addition, the drive mechanism that can be used for the coarse motion can utilize the air cylinder, and the drive mechanism for the fine motion utilizes the motor. At this time, by controlling the torque of the motor for the fine motion to control the motor, the pressing force of the polishing pad 502 against the substrate Wf can be controlled. Further, other driving mechanisms may also use a piezoelectric element, which can be applied to the voltage adjustment movement amount of the piezoelectric element. In addition, when the vertical driving mechanism 602 is divided into the micro-motion and the coarse motion, the driving mechanism for the micro-motion can also be disposed at the position where the holding arm 600 holds the polishing pad 502, that is, the first figure is an example of the front end of the arm 600. .

The partial polishing apparatus 1000 shown in the first figure is provided with a lateral drive mechanism 620 for moving the holding arm 600 in the lateral direction (the x direction in the first drawing). The polishing head 500 and the polishing pad 502 are movable in the lateral direction together with the arm 600 by the lateral drive mechanism 620. Further, the lateral direction (x direction) is perpendicular to the first moving direction and parallel to the second moving direction of the substrate surface. Therefore, the partial polishing apparatus 1000 can polish the substrate Wf by moving the polishing pad 502 in the first moving direction (y direction), and at the same time moving the polishing pad 502 in the orthogonal second moving direction (x direction), so that the substrate can be The shape of the Wf is more uniform. As described above, in the partial polishing apparatus 1000 shown in the first figure, the linear velocity in the contact area between the polishing pad 502 and the substrate Wf is constant. However, since the shape and material of the polishing pad 502 are not uniform, and the contact state between the polishing pad 502 and the substrate is not uniform, the shape of the processing mark of the substrate Wf, particularly the contact surface between the polishing pad 502 and the substrate Wf, is first The direction of the vertical direction of the movement causes a deviation in the grinding speed. However, by moving the polishing pad 502 in a direction perpendicular to the first moving direction during polishing, the polishing deviation can be alleviated, so that the shape of the processing mark can be made more uniform. Further, in the embodiment shown in the first embodiment, the vertical drive mechanism 602 is a mechanism that uses a motor and a ball screw. Further, in the embodiment shown in the first figure, the lateral drive mechanism 620 is configured such that each vertical drive mechanism 602 moves the holding arm 600. Further, the second moving direction is not perpendicular to the first moving direction, and as long as it has a direction perpendicular to the component of the first moving direction, the effect of making the shape of the processing mark uniform can be exhibited.

The partial polishing apparatus 1000 of the embodiment shown in the first embodiment includes a polishing liquid supply nozzle 702. The slurry supply nozzle 702 is fluidly connected to a polishing liquid, such as a supply source 710 of the slurry (refer to the fifteenth diagram). Further, in the partial polishing apparatus 1000 of the embodiment shown in the first embodiment, the polishing liquid supply nozzle 702 is held by the holding arm 600. Therefore, the polishing liquid can be efficiently supplied only to the polishing region on the substrate Wf by the polishing liquid supply nozzle 702.

The partial polishing apparatus 1000 of the embodiment shown in the first embodiment includes a cleaning mechanism 200 for cleaning the substrate Wf. In the embodiment shown in the first embodiment, the cleaning mechanism 200 includes a cleaning head 202, a cleaning member 204, a cleaning head holding arm 206, and a rinse nozzle 208. The cleaning member 204 is a member for rotating and contacting the substrate Wf to wash the partially polished substrate Wf. One embodiment of the cleaning member 204 can be formed from a PVA sponge. However, the cleaning member 204 may be provided with a cleaning nozzle for achieving a million-sonic cleaning, a high-pressure water washing, or a two-fluid cleaning, in place of the PVA sponge. The cleaning member 204 is held by the cleaning head 202. Further, the cleaning head 202 is held by the cleaning head holding arm 206. The washing head holding arm 206 is provided with a driving mechanism for rotating the washing head 202 and the washing member 204. This drive mechanism can be constituted by, for example, a motor or the like. Further, the cleaning head holding arm 206 is provided with a rocking mechanism for shaking the surface of the substrate Wf. The cleaning mechanism 200 includes a rinse nozzle 208. The washing nozzle 208 is connected to a cleaning liquid supply source (not shown). The washing liquid may be, for example, pure water, a chemical liquid or the like. In one embodiment, the rinse nozzle 208 can also be attached to the wash head holding arm 206. The rinse nozzle 208 is provided with a rocking mechanism for rocking in the plane of the Wf.

The partial polishing apparatus 1000 of the embodiment shown in the first embodiment includes an adjustment unit 800 for adjusting the polishing pad 502. The adjustment unit 800 is disposed outside the stage 400. The adjustment unit 800 includes a dressing stage 810 that holds the dresser 820. In the embodiment of the first embodiment, the dressing stage 810 is rotatable about the rotation axis 810A. In the partial polishing apparatus 1000 of the first drawing, the polishing pad 502 can be performed by pressing the polishing surface of the polishing pad 502 (the surface on which the substrate Wf is contacted) against the trimmer 820 and rotating the polishing pad 502 and the trimmer 820. Adjustment. Further, in other embodiments, the dressing stage 810 may be configured to perform linear motion (including reciprocating motion) without being rotated. Further, in the partial polishing apparatus 1000 of the first drawing, the adjustment portion 800 mainly uses a portion of the polishing at a certain point of the end substrate Wf, and the polishing pad 502 is adjusted before the next polishing or partial polishing of the next substrate. Further, in the middle of partially polishing the substrate Wf, the polishing pad 502 may be temporarily retracted and adjusted by the adjustment unit 800. Here, the trimmer 820 can be, for example, by (1) a diamond dresser in which a diamond particle is fixed on a surface; (2) a diamond dresser in which a diamond abrasive grain is disposed on a contact surface with a polishing pad; (3) forming a brush bristles of resin in a whole or a part of a brush dresser on a contact surface with the polishing pad; and (4) forming any one or the like in any combination.

The partial polishing apparatus 1000 of the embodiment shown in the first embodiment includes a second adjuster 850. The second adjuster 850 is used to polish the polishing surface of the polishing pad 502 (the surface contacting the substrate Wf) in the substrate Wf by the polishing pad 502. Thus, the second adjuster 850 can also be referred to as an in-situ adjuster. The second adjuster 850 is held by the retaining arm 600 near the polishing pad 502. The second adjuster 850 is provided with a moving mechanism 854 for moving the adjustment member 852 in a direction in which the polishing pad 502 contacts the adjustment member 852 (refer to the third to ninth views). Here, the adjusting member 852 can be, for example, (1) a diamond dresser in which a diamond particle is electrodeposited on a surface; (2) a diamond dresser in which a diamond abrasive grain is disposed on a whole or a part of a contact surface with the polishing pad; (3) forming a brush bristles of resin in a whole or a part of a brush dresser on a contact surface with the polishing pad; and (4) forming any one or the like in any combination. In the embodiment of the first embodiment, the adjustment member 852 is held away from the polishing pad 502 in the y direction in the vicinity of the polishing pad 502, and the adjustment member 852 can be moved in the y direction by the moving mechanism 854. The moving mechanism 854 has a function as a pressing mechanism that presses the adjustment member 852 against the polishing pad 502. Here, the moving mechanism 854 may be a mechanism using a motor and a ball screw, a pneumatic or hydraulic drive mechanism, or a drive mechanism using a spring, or a combination thereof. For example, constant pressure control by a combination of an air cylinder and a precision regulator, constant pressure control by a combination of an air cylinder and an elastic body (spring, etc.), and opening by a combination of an air cylinder and an electric pressure regulating valve The combination of loop control, air cylinder and electric pressure regulator uses closed loop control from the pressure value of the external pressure sensor, closed loop control using the load value from the load sensor in the combination of the air cylinder and the electric pressure regulator, The combination of the servo motor and the ball screw uses closed loop control of the load value from the load sensor. Further, in one embodiment, the adjustment member 852 may also be configured to be rotationally and/or linearly moved by a drive mechanism (not shown). Therefore, when the substrate Wf is polished by the polishing pad 502, the polishing pad 502 can be adjusted during polishing of the substrate Wf by rotating the adjustment member 852 or the like and pressing the polishing pad 502. The details of the second adjuster 850 will be described later.

In the embodiment shown in the first figure, the partial polishing apparatus 1000 includes the control device 900. The various drive mechanisms of the partial polishing apparatus 1000 are coupled to the control apparatus 900, and the control apparatus 900 can control the operation of the partial polishing apparatus 1000. Further, the control device includes a calculation unit that calculates a target polishing amount in the region to be polished of the substrate Wf. The control device 900 is configured to control the polishing device in accordance with the target polishing amount calculated by the calculation unit. Further, the control device 900 can be configured by being mounted on a general computer including a memory device, a CPU, an input/output mechanism, and the like.

Further, in one embodiment, the partial polishing apparatus 1000 may be provided with the state detecting unit 420 (the thirteenth Ath, the thirteenth Bth, and the like) for detecting the state in which the substrate Wf is polished. However, in the first drawing, Illustration. An example of the state detecting unit may be a Wet-ITM (In-line Thickness Monitor) 420. The Wet-ITM420-based detecting head is present on the substrate Wf in a non-contact state, and by detecting the entire surface of the substrate Wf, the film thickness distribution (or film thickness) of the film formed on the substrate Wf can be detected (measured). Information distribution). Further, the state detecting unit 420 may use any type of detector in addition to the Wet-ITM. For example, the detection method that can be utilized can be a conventional eddy current or optical non-contact detection method, and a contact type detection method can also be used. For the contact type detection method, for example, a resistance type detection is used, and a detection head including a probe capable of being energized is prepared, and the surface of the substrate Wf is scanned while the probe is brought into contact with the substrate Wf to detect the film resistance. distributed. In addition, other contact detection methods may also adopt a step detection method in which the surface of the substrate Wf is scanned while the probe is in contact with the surface of the substrate Wf, and the unevenness distribution of the surface is detected by monitoring the movement of the probe up and down. . In the contact type and non-contact type detection methods, the output of the detection is a signal of a film thickness or a film thickness. In the optical detection, in addition to the amount of reflected light of the light projected on the surface of the substrate Wf, the difference in film thickness can be recognized from the difference in hue of the surface of the substrate Wf. Further, when the film thickness is detected on the substrate Wf, the substrate Wf is rotated, and the detector is shaken in the radial direction to detect the film thickness. Thereby, information on the surface state such as the film thickness and the step of the entire substrate Wf can be obtained. Further, by using the groove or the orientation plane position detected by the detecting portion 408 as a reference, it is also possible to associate the material such as the film thickness with the position in the radial direction in addition to the position in the radial direction, whereby the substrate Wf can be obtained. Film thickness and step or signal distribution associated with this. Further, when partial polishing is performed, the operations of the stage 400 and the holding arm 600 can be controlled based on the position data.

The state detecting unit 420 described above is connected to the control device 900, and the signal detected by the state detecting unit 420 is processed by the control device 900. The control device 900 for the detector of the state detecting unit 420 may be of the same hardware as the control device 900 for controlling the operation of the stage 400, the polishing head 500, and the holding arm 600, or may use different hardware. When the control device 900 that controls the operation of the stage 400, the polishing head 500, and the holding arm 600 and the control device 900 for the detector use different hardware, the polishing process for the substrate Wf and the detection of the surface state of the substrate Wf can be dispersed and The hardware resources of the subsequent signal processing can be processed at a high speed as a whole.

Further, the detection timing of the state detecting unit 420 may be before, during, and/or after polishing of the substrate Wf. When the state detecting unit 420 is mounted independently, even before polishing, after polishing, or during polishing, the interval between the polishing processes is not disturbed, that is, the operation of the holding arm 600 is not disturbed. However, in the processing of the substrate Wf, the film thickness or the signal time delay with respect to the film thickness is avoided as much as possible, and in the processing of the substrate Wf, when the film thickness of the substrate Wf is detected simultaneously with the processing of the polishing head 500, the action of the holding arm 600 is performed. The state detecting unit 420 is scanned. In the case of detecting the state of the surface of the substrate Wf, the state detecting unit 420 is mounted in the partial polishing apparatus 1000. However, for example, when the polishing process of the partial polishing apparatus 1000 takes time, the detection unit is used from the viewpoint of productivity. It can also be disposed outside the partial polishing apparatus 1000 as a detecting unit. For example, in the case of ITM, Wet-ITM is effective in measurement during processing, and when it is necessary to obtain a film thickness or a signal corresponding to the film thickness before or after the treatment, it is not necessarily required to be mounted on the partial polishing apparatus 1000. The ITM may be mounted outside the partial polishing module, and the measurement may be performed when the substrate Wf enters and exits the partial polishing apparatus 1000. Further, the polishing end point of each of the polished regions of the substrate Wf may be determined based on the film thickness obtained by the state detecting unit 420 or the signal regarding the film thickness, the unevenness, and the height.

The third diagram schematically shows a perspective view of an example of a second adjuster 850 that can be utilized in the partial polishing apparatus 1000 shown in the first figure. The third figure shows the vicinity of the polishing head 500 at the front end of the holding arm 600. As shown in the third figure, the polishing head 500 holds a polishing pad 502 in the shape of a rotatable disk. In the embodiment shown in the third figure, the polishing pad 502 can move the substrate Wf in the y direction of the first moving direction by rotation. As shown in the third figure, the second adjuster 850 is mounted to the retaining arm 600. The second adjuster 850 is provided with an adjustment member 852 for adjusting the polishing pad 502. The adjustment member 852 is configured to be moved away from the polishing pad 502 in the y direction in the vicinity of the polishing pad 502 and held by the moving mechanism 854, and the adjustment member 852 can be moved in the y direction by the moving mechanism 854. The moving mechanism 854 has a function as a pressing mechanism that presses the adjustment member 852 against the polishing pad 502. Thus, the second adjuster 850 can adjust the polishing pad 502 during grinding by contacting the adjustment member 852 with the polishing pad 502 during polishing. Further, the moving mechanism 854 may be constituted by a motor or the like, or may be a hydraulic or pneumatic type moving mechanism.

The fourth drawing schematically shows a perspective view of an example of a second adjuster 850 that can be utilized in the partial polishing apparatus 1000 shown in the first figure. The fourth figure shows the vicinity of the polishing head 500 at the front end of the holding arm 600. The second adjuster 850 shown in the fourth figure adds a rocking mechanism 856 to the second adjuster 850 shown in the third figure. The rocking mechanism 856 is perpendicular to the first moving direction of the moving direction of the polishing pad 502, and the second moving direction parallel to the surface of the substrate Wf has a component direction, and the rocking mechanism 856 can move the moving mechanism 854 and the adjusting member 852. In the embodiment shown in the fourth figure, the rocking mechanism 856 can move the moving mechanism 854 and the adjusting member 852 perpendicularly and parallel to the x direction of the substrate Wf in the first moving direction (y direction) of the polishing pad 502. Therefore, in the adjustment polishing pad 502, the adjustment member 852 can change the position in contact with the polishing pad 502. Thus, by increasing the second moving direction component in the direction perpendicular to the first moving direction of the moving direction of the polishing pad 502, the contact surface of the polishing pad 502 and the substrate Wf can be more uniformly adjusted. Further, the rocking mechanism 856 may be constituted by a motor or the like, or may be a hydraulic or pneumatic type moving mechanism. Further, the mechanism for imparting the second moving direction component is an example of the rocking motion, but may be, for example, a second moving direction component having a rotational motion or a translational rotational motion (combining linear motion and rotational motion). The motion mechanism is also the same in other embodiments to be described later. Further, although the shape of the adjustment member 852 is a flat plate shape, the shape may be changed as appropriate depending on the shape of the polishing pad 502 or the second movement mechanism, and the same applies to other embodiments to be described later. For example, when the second kinematic mechanism is rotated or translated, the adjustment member 852 can also be in the shape of a circular plate. Further, when the polishing pad 502 has a circular plate, a cylinder, or a spherical curved surface, the contact surface between the adjustment member 852 and the polishing pad 502 may have a curved surface shape, whereby the polishing pad 502 can be effectively adjusted. Further, in order to suppress the load concentration at the time of adjustment, the end portion of the adjustment member 852 may be chamfered or the like.

The fifth drawing schematically shows a side view of an example of the polishing head 500 and the second regulator 850 which can be used in the partial polishing apparatus 1000 of one embodiment. In the embodiment shown in the fifth embodiment, the polishing pad 502 has a circular plate shape. A disc-shaped polishing pad 502 is held by the rotatable polishing head 500. As shown in the fifth figure, the rotating shaft 502A of the polishing head 500 is inclined from a direction perpendicular to the surface of the substrate Wf. In other words, the surface of the disc-shaped polishing pad 502 is not parallel to the substrate Wf. Therefore, when the polishing head 500 is rotated and the polishing pad 502 is pressed against the substrate Wf, the edge portion of the disk-shaped polishing pad 502 is only in contact with the substrate Wf in a certain direction, and the edge portion in the opposite direction is separated from the substrate Wf. In this state, since only the edge portion of the polishing pad 502 is in contact with the substrate Wf, the minute region can be polished.

The second adjuster 850 of the partial polishing apparatus 1000 shown in FIG. 5 is provided with an adjustment member 852. The adjustment member 852 is coupled to the movement mechanism 854. The moving mechanism 854 can move the adjustment member 852 to the direction of the polishing pad 502, and can also be pressed against the polishing pad 502. One embodiment of the moving mechanism 854 is coupled to the rocking mechanism 856. The rocking mechanism 856 can move the moving mechanism 854 and the adjustment member 852 to a direction having a component in a direction perpendicular to the rotation axis 502A of the polishing pad 502. As shown in the fifth figure, the moving mechanism 854 and the rocking mechanism 856 are held by the support member 858. The support member 858 is fixed to the holding arm 600. As shown in the fifth figure, the edge portion of the polishing pad 502 in a certain direction can be pressed against the substrate Wf to polish the substrate Wf while the edge portion of the polishing pad 502 in the opposite direction is separated from the substrate Wf. Therefore, the adjustment member 852 is pressed at the edge portion in the opposite direction, and the polishing pad 502 can be adjusted during the polishing of the substrate Wf. Further, in one embodiment, the second adjuster 850 may include a rotating mechanism and a translational rotational motion mechanism that rotate the adjustment member 852 shown in Fig. 5 with the rotation shaft 852A as a center. However, there is no such rotating mechanism. The moving mechanism 854 and the rocking mechanism 856 may be constituted by a motor or the like, or may be a hydraulic or pneumatic moving mechanism.

The sixth drawing schematically shows a side view of an example of the polishing head 500 and the second regulator 850 which can be used in the partial polishing apparatus 1000 of one embodiment. In the embodiment shown in the sixth embodiment, the polishing pad 502 has a conical shape. Alternatively, a polishing pad may be disposed on the base of the conical shape. The head-conical shaped polishing pad 502 is held in a rotatable polishing head 500. As shown in the sixth figure, the rotating shaft 502A of the polishing head 500 is parallel to the surface of the substrate Wf and coincides with the center of the conical shape of the cutting head. In this state, since only the edge portion of the polishing pad 502 is in contact with the substrate Wf, the minute region can be polished.

The second adjuster 850 of the partial polishing apparatus 1000 shown in FIG. 6 is provided with an adjustment member 852. The adjustment member 852 is disposed in contact with the side surface of the polishing pad 502 having a conical shape. The adjustment member 852 is coupled to the movement mechanism 854. The moving mechanism 854 can move the adjustment member 852 toward the side of the cutting cone-shaped polishing pad 502 and can be pressed against the side surface of the cutting cone-shaped polishing pad 502. One embodiment of the moving mechanism 854 is coupled to the rocking mechanism 856. The rocking mechanism 856 can move the moving mechanism 854 and the adjusting member 852 in the direction along the side of the cutting head 262 shaped polishing pad 502. As shown in the sixth diagram, the moving mechanism 854 and the rocking mechanism 856 are held by the support member 858. The support member 858 is fixed to the holding arm 600. In the embodiment shown in the sixth embodiment, the substrate Wf can be polished by the polishing pad 502 while the polishing pad 502 is adjusted by the second adjuster 850. The moving mechanism 854 and the rocking mechanism 856 may be constituted by a motor or the like, or may be a hydraulic or pneumatic moving mechanism.

The seventh drawing schematically shows a side view of an example of the polishing head 500 and the second regulator 850 which can be used in the partial polishing apparatus 1000 of one embodiment. In the embodiment shown in the seventh embodiment, the polishing pad 502 has a shape of a part of a spherical shape. Alternatively, the polishing pad may be disposed on a substrate having a shape of a portion of a spherical shape. The polishing pad 502 is held in a rotatable polishing head 500. As shown in the seventh figure, the rotating shaft 502A of the polishing head 500 is parallel to the surface of the substrate Wf.

The second adjuster 850 of the partial polishing apparatus 1000 shown in the seventh figure is provided with an adjustment member 852. The adjustment member 852 has a disk shape, a square plate shape, or a curved shape along the spherical shape of the polishing pad 502, and is disposed in contact with the side surface of the polishing pad 502. The adjustment member 852 is coupled to the movement mechanism 854. The moving mechanism 854 can move the adjustment member 852 toward the polishing pad 502 and can press it against the polishing pad 502. In the embodiment shown in the seventh figure, the moving mechanism 854 is held by the support member 858. The support member 858 is provided with a curved concave portion 860. As shown in the seventh figure, the curved surface of the concave shaped portion 860 may be a curved surface that is the center of the spherical shape of the polishing pad 502. The moving mechanism 854 is located on the curved surface of the concave portion 860 of the support member 858, and is disposed to be rockable along the curved surface. The support member 858 is fixed to the holding arm 600. In the embodiment shown in the seventh embodiment, the substrate Wf can be polished by the polishing pad 502 while the polishing pad 502 is adjusted by the second adjuster 850. The moving mechanism 854 and the rocking mechanism 856 may be constituted by a motor or the like, or may be a hydraulic or pneumatic moving mechanism.

The eighth drawing schematically shows a side view of an example of the polishing head 500 and the second regulator 850 which can be used in the partial polishing apparatus 1000 of one embodiment. In the embodiment shown in the eighth embodiment, the polishing member has the polishing tape member 502B. The polishing tape member 502B is supported by the support member 520, and the polishing tape member 502B can be pressed against the substrate Wf. The polishing tape member 502B is movable in the longitudinal direction by the rotation mechanism 522. The polishing tape member 502B is made of, for example, a material of a commercially available CMP pad. In the embodiment of the eighth embodiment, the second adjuster 850 has an adjustment member 852. The adjustment member 852 is a disk shape or a square plate shape, and is disposed in contact with the polishing surface of the polishing tape member 502B. The adjustment member 852 is coupled to the movement mechanism 854. The moving mechanism 854 can move the adjustment member 852 toward the abrasive belt member 502B. As shown in the eighth figure, the second adjuster 850 is provided inside the polishing tape member 502B, and has a back support member 862 at a position corresponding to the adjustment member 852. In the embodiment shown in the eighth embodiment, the polishing tape member 502B can be supported by the belt back support member 862, and the adjustment member 852 can be pressed against the polishing tape member 502B for adjustment.

The ninth diagram is a view from the direction of the arrow 9 in the eighth diagram. As shown in the ninth diagram, the second adjuster 850 is provided with a rocking mechanism 856. The rocking mechanism 856 can move the moving mechanism 854 and the adjusting member 852 in the width direction of the polishing tape member 502B. The moving mechanism 854 and the rocking mechanism 856 may be constituted by a motor or the like, or may be a hydraulic or pneumatic moving mechanism.

The partial polishing apparatus 1000 of one embodiment has a recovery device 300 for recovering debris generated from the polishing member when the polishing pad 502 is adjusted. The tenth diagram schematically shows a side view of a recovery apparatus 300 of one embodiment. As shown in the tenth diagram, the recovery device 300 is attached to the holding arm 600. The recovery device 300 shown in the tenth diagram includes a suction unit 302. The suction portion 302 is disposed so as to be close to the surface of the polishing pad 502 that is in contact with the substrate Wf. In the embodiment of the tenth embodiment, the polishing pad 502 is a disk-shaped or cylindrical polishing pad 502, and the suction portion 302 is disposed on a side surface of the polishing pad 502 which is close to the disk shape or the cylindrical shape. A suction passage 304 is connected to the suction portion 302, and the suction passage 304 is connected to a vacuum source (not shown). The suction portion 302 is disposed on the downstream side of the movement direction of the polishing pad 502 (the rotation direction in the embodiment of the tenth embodiment) so that the adjustment member 852 is in contact with the polishing pad 502. In the embodiment of the tenth embodiment, the polishing pad 502 is rotated in the clockwise direction, and the suction portion 302 is disposed on the downstream side from the position where the adjustment member 852 is in contact with the polishing pad 502. As shown in the tenth figure, the partial polishing apparatus 1000 can polish the substrate Wf by the polishing pad 502, and adjust the polishing pad 502 by the second adjuster 850. Debris is generated from the polishing pad 502 by adjustment. The recovery device 300 shown in the tenth diagram can attract debris that is generated during the adjustment. The polishing device can suppress the polishing pad debris generated when the second adjuster 850 performs the adjustment to reach the surface of the substrate Wf, and can suppress the surface of the substrate Wf from being contaminated by the polishing pad debris.

The eleventh diagram schematically shows a side view of a recovery apparatus 300 of one embodiment. As shown in the eleventh diagram, the recovery device 300 is mounted to the holding arm 600. The recovery device 300 shown in Fig. 11 is provided with a squeegee 306 (or a doctor blade). The squeegee 306 is disposed in contact with the surface of the polishing pad 502 that is in contact with the substrate Wf. In the embodiment of the eleventh embodiment, the polishing pad 502 is a disk-shaped or cylindrical polishing pad 502, and the squeegee 306 is disposed so as to be in contact with the disk-shaped or cylindrical-shaped polishing pad 502. The squeegee 306 is supported by a support member 308 that is coupled to the retaining arm 600. As shown in FIG. 11 , the partial polishing apparatus 1000 can polish the substrate Wf by the polishing pad 502 and adjust the polishing pad 502 by the second adjuster 850. Debris is generated from the polishing pad 502 by adjustment. The recovery device 300 shown in FIG. 11 can remove the debris generated during the adjustment from the polishing pad 502 by the squeegee 306. Further, a collecting device 300 for recovering the scrap generated from the polishing member shown in FIG. 10 in the downstream portion of the polishing pad 502 may be further provided, but is not shown.

Fig. 12 is a side view schematically showing a recovery apparatus 300 of an embodiment. The recovery device 300 shown in Fig. 12 includes a liquid supply mechanism 310 for washing the adjusted polishing pad 502, and a liquid recovery mechanism 312 for recovering the liquid after cleaning the polishing pad 502. The liquid supply mechanism 310 may be, for example, a nozzle that sprays pure water on the polishing pad 502. The liquid supply mechanism 310 may be a container that holds pure water sprayed on the polishing pad 502, and a liquid discharge portion 314 may be disposed in the container. As shown in FIG. 12, the partial polishing apparatus 1000 can polish the substrate Wf by the polishing pad 502 and adjust the polishing pad 502 by the second adjuster 850. Debris is generated from the polishing pad 502 by adjustment. The recovery device 300 shown in Fig. 12 can remove the debris generated during the adjustment from the polishing pad 502 by spraying the liquid onto the polishing pad 502.

In the tenth to twelfth drawings, the partial polishing apparatus 1000 having the disk shape or the cylindrical shape of the polishing pad 502 is described as the recovery device 300. However, the polishing pad having a disk shape or a cylindrical shape is used. A similar recovery device 300 can be provided in the partial polishing apparatus 1000 of 502. For example, the recovery device 300 can be applied to any of the polishing pad 502, the abrasive tape member 502B, or any other abrasive member disclosed herein.

Fig. 13A is a view showing an example of a control circuit for processing the film thickness, the unevenness, and the height related information of the substrate Wf according to the embodiment. First, the partial polishing control unit determines the basic partial polishing treatment formula in combination with the polishing processing recipe and parameters set by the HMI (Human Machine Interface). At this time, the partial polishing treatment recipe and parameters may also be downloaded from the host (HOST) to the partial polishing apparatus 1000. Next, the recipe server combines the basic part of the grinding treatment recipe with the grinding processing information of the program Job to generate a basic portion of the processing recipe for each of the processed substrates Wf. The partial polishing recipe server combines the partial polishing treatment formula of each substrate Wf processed with the surface shape data of the substrate stored in the partial polishing database, and further combines information on the surface shape of the substrate after polishing of the past portion of the similar substrate and the prior information obtained. The polishing conditions are based on the polishing rate data of each parameter, and a part of the polishing treatment recipe of each substrate is generated. At this time, the surface shape data of the substrate stored in the partial polishing database may be the data of the substrate Wf measured in the partial polishing apparatus 1000, or may be downloaded from the host (HOST) to the partial polishing apparatus 1000 in advance. data. The partially ground recipe server delivers the partial grinding process recipe to the partial grinding apparatus 1000 via a recipe server or directly. The partial polishing apparatus 1000 partially polishes the substrate Wf in accordance with the received partial polishing treatment recipe.

Fig. 13B is a circuit diagram showing a state in which the state detecting portion of the substrate surface is divided from the partial polishing control portion shown in Fig. 13A. By separating the surface state detecting control unit of the substrate for processing a large amount of data from the partial polishing control unit, the data processing load of the partial polishing control unit is lowered, and it is expected to shorten the setup time of the program job and generate a part of the polishing processing recipe. The processing time can increase the throughput of the entire partial polishing module.

Fig. 14 is a schematic view showing a substrate processing system 1100 of a partial polishing apparatus 1000 according to an embodiment. As shown in FIG. 14, the substrate processing system 1100 includes a partial polishing apparatus 1000, a large-diameter polishing apparatus 1200, a cleaning apparatus 1300, a drying apparatus 1400, a control apparatus 900, and a conveying apparatus 1500. The partial polishing apparatus 1000 of the substrate processing system 1100 can be a partial polishing apparatus 1000 having any of the above features. The large-diameter polishing apparatus 1200 is a polishing apparatus that polishes a substrate by using a polishing pad having a larger area than the substrate Wf to be polished. The large diameter grinding apparatus 1200 can utilize a conventional CMP apparatus. Further, any cleaning device 1300, drying device 1400, and conveying device 1500 may be employed. The control device 900 can be not only the above-described partial polishing device 1000 but also the actor of the entire substrate processing system 1100. In the embodiment shown in Fig. 14, the partial polishing apparatus 1000 and the large-diameter polishing apparatus 1200 constitute one substrate processing system 1100. Therefore, various polishing processes can be performed by the partial polishing of the partial polishing apparatus 1000, the overall polishing of the substrate Wf of the large-diameter polishing apparatus 1200, and the detection of the surface state of the substrate Wf by the state detecting portion. Further, the partial polishing of the partial polishing apparatus 1000 is not the entire surface of the substrate Wf, but only a part of the polishing may be performed. Further, in the polishing process of the entire surface of the substrate Wf in the partial polishing apparatus 1000, the polishing condition may be changed on a part of the surface of the substrate Wf. To grind.

Here, a partial polishing method of the substrate processing system 1100 will be described. First, the surface state of the substrate Wf of the object to be polished is detected. The surface state is information (position, size, height, etc.) of the film thickness and surface unevenness of the film formed on the substrate Wf, and is detected by the above-described state detecting unit 420. Next, a polishing formulation is prepared in accordance with the surface state of the detected substrate Wf. Here, the polishing recipe is composed of a plurality of processing steps, and the parameters in each step, for example, the partial polishing apparatus 1000 includes: processing time, contact pressure of the polishing pad 502 to the substrate Wf or the trimmer 820 disposed on the conditioning stage 810 or The load, the moving speed, the load of the adjusting member 852 of the second adjuster 850 pressing the polishing pad 502, the movement type and moving speed of the moving mechanism 854, the adjustment time, the adjustment period, the number of revolutions of the polishing pad 502 and the substrate Wf, and the polishing head 500 The type of movement and movement speed, the selection and flow rate of the polishing pad treatment liquid, the number of revolutions of the dressing stage 810, and the detection conditions of the polishing end point. Further, in the partial polishing, it is necessary to determine the operation of the polishing head 500 in the plane of the substrate Wf in accordance with the information on the film thickness and the unevenness in the surface of the substrate Wf obtained by the state detecting portion 420. For example, regarding the retention time of each polishing region of the polishing head 500 in the surface of the substrate Wf, the parameters to be determined include, for example, a desired film thickness, a target value corresponding to the uneven state, and a polishing rate in the polishing condition. Here, since the polishing rate varies depending on the polishing conditions, it can be stored in the control device 900 as a database and automatically calculated when the polishing conditions are set. Here, the polishing rate for each of the parameters to be used can be obtained in advance and stored as a database. The retention time of the polishing head 500 in the plane of the substrate Wf can be calculated from the parameters and the obtained information on the film thickness and the unevenness in the surface of the substrate Wf. Further, as will be described later, since the pre-measurement, the partial polishing, the overall polishing, and the cleaning path differ depending on the state of the substrate Wf and the processing liquid to be used, the transfer path of these elements can be set. Further, it is also possible to set the film thickness in the surface of the substrate Wf and the conditions for obtaining the unevenness data. Further, when the Wf state after the treatment described later is less than the allowable degree, it is necessary to perform re-polishing, but the processing conditions at this time (the number of repetitions of re-polishing, etc.) may be set. Then, partial grinding and overall grinding were carried out in accordance with the prepared polishing recipe. Further, in this example and other examples described below, the cleaning of the substrate Wf can be performed at any time. For example, when the partial polishing is different from the processing liquid used in the overall polishing, and the contamination of the entire polishing cannot be neglected by the partially polished treatment liquid, the substrate may be subjected to the respective polishing treatments of the partial polishing and the overall polishing for the purpose of preventing the contamination. Wash the Wf. On the other hand, when the treatment liquid which is negligible in the treatment of the liquid phase and the contamination of the treatment liquid is used, the substrate Wf may be washed after both the partial polishing and the overall polishing.

The embodiments of the present invention have been described above on the basis of a few examples. However, the embodiments of the invention described above are intended to facilitate the understanding of the invention and are not intended to limit the invention. The present invention may be modified and improved without departing from the spirit and scope of the invention, and the invention is of course equivalent. In addition, in the range in which at least a part of the above-mentioned problems can be solved, or in the range in which at least some of the effects are effective, the respective components described in the patent application scope and the specification can be arbitrarily combined or omitted.

Claims (14)

 A polishing apparatus for partially polishing a substrate, comprising: an abrasive member having a processing surface that is smaller than a substrate; the adjustment member for adjusting the polishing member; and a first pressing mechanism for polishing the substrate The control member is used to control the polishing member; and the control device is configured to control the operation of the polishing device. The control device is configured to control the first pressing mechanism when the polishing member partially polishes the substrate.    A polishing apparatus according to claim 1, comprising: a pressing mechanism for pressing the polishing member against the substrate; and a first driving mechanism for using the polishing member in parallel with the surface of the substrate The first direction of motion imparts motion.    A polishing apparatus according to claim 2, wherein the second driving mechanism is configured to apply the component to the second moving direction that is perpendicular to the first moving direction and parallel to the surface of the substrate. Give exercise.    The polishing apparatus of claim 3, wherein the second driving mechanism is configured to impart linear motion and/or rotational motion to the adjustment member.    The polishing apparatus according to any one of claims 1 to 4, wherein the control device is configured to control the first pressing mechanism in such a manner that adjustment is performed at a predetermined cycle during substrate polishing.    The polishing apparatus according to any one of claims 1 to 4, wherein the polishing member and the adjustment member are held by the holding arm.    A polishing apparatus according to any one of claims 1 to 4, which has a recovery apparatus for recovering debris generated from the grinding member at the time of adjustment.    A polishing apparatus according to claim 7, wherein the recovery apparatus has a suction portion that sucks and removes debris generated from the polishing member at the time of adjustment.    The polishing apparatus of claim 7, wherein the recovery apparatus has a scraper or a scraper for collecting debris generated from the grinding member during adjustment.    The polishing apparatus of claim 7, wherein the recovery apparatus comprises: a liquid supply mechanism for cleaning the adjusted polishing member; and a liquid recovery mechanism for recovering the liquid after the polishing member is cleaned .    The polishing apparatus according to any one of claims 1 to 4, wherein the polishing member has any one of the following: (1) a disk shape or a cylindrical shape, and the aforementioned circular plate shape or the aforementioned cylindrical shape The central axis is parallel to the surface of the substrate; (2) the shape of the circular plate, and the central axis of the shape of the circular plate is inclined from a direction perpendicular to the surface of the substrate; (3) a conical shape or a conical shape, and the aforementioned conical shape or the aforementioned cutting The central axis 4 of the head conical shape is parallel to the surface of the substrate; (4) a spherical shape or a shape having a portion of a spherical shape; and (5) a belt member.    A polishing method for polishing a substrate, comprising: pressing a polishing member that is in contact with a substrate with a processing surface smaller than a substrate to a substrate; and pressing the polishing member against the substrate, and the polishing member and the substrate The substrate is polished by relative movement; and the polishing member is adjusted by contacting the adjustment member with the polishing member in the polishing substrate.    The method of polishing according to claim 12, wherein the step of imparting linear motion and/or rotational motion to the adjustment member is provided.    A grinding method according to claim 12 or 13, wherein there is a step of recovering the debris generated from the grinding member when the aforementioned grinding member is adjusted.