JP2012138628A - 配線基板及び半導体装置 - Google Patents
配線基板及び半導体装置 Download PDFInfo
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- JP2012138628A JP2012138628A JP2012084282A JP2012084282A JP2012138628A JP 2012138628 A JP2012138628 A JP 2012138628A JP 2012084282 A JP2012084282 A JP 2012084282A JP 2012084282 A JP2012084282 A JP 2012084282A JP 2012138628 A JP2012138628 A JP 2012138628A
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- JP
- Japan
- Prior art keywords
- filled
- layer
- substrate
- filled stack
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Abstract
【解決手段】 導体層と、前記導体層の表面に形成される第1の凸部と、前記導体層上に形成される第1の絶縁層と、前記第1の絶縁層に形成され、前記第1の凸部を露出させる第1の開口部と、前記第1の開口部内に配置され、前記第1の凸部が底部に埋め込まれる第1のフィルドビアと、前記第1の絶縁膜及び前記第1のフィルドビア上に形成される第2の絶縁層と、前記第2の絶縁層に形成される第2の開口部と、前記第2の開口部内に配置され、前記第1のフィルドビアに接続される第2のフィルドビアとを備える。
【選択図】 図1
Description
11 コア基板
12 Cuメッキ層
13 樹脂
14 配線パターン
16 層間絶縁膜
17 ソルダーレジスト
18,181,182,183 フィルドスタックビア
19 突起部
21 半導体チップ
22 半田バンプ
23 アンダーフィル樹脂
24 ポリイミド樹脂コート層
29 多層ビルドアップ基板
30 コア基板
31 貫通ビア
32 Cuパターン
33 ビア充填樹脂層
34 Cuメッキ層
35 レジストパターン
36 開口部
37 配線パターン
38 凹部
39,46,51 層間絶縁膜
40,47 レーザ光
41,48 ビアホール
42 Cuメッキ層
43 レジストパターン
44,49,52 フィルドスタックビア
45,50,53 配線パターン
88 レジストパターン
89 配線パターン
90,94 ドライフィルムレジスト
91,95,98 Cu突起部
92,96,99 フィルドスタックビア
93,97,100 配線パターン
101 樹脂突起
110 半導体素子
111 半田バンプ
112 ポリイミド樹脂コート層
113 アンダーフィル樹脂
114 半田ボール
115 ソルダーレジスト
116 埋込ビア構造
117 平坦なフィルドスタックビア構造
201 半導体素子
202 バンプ
203 アンダーフィル樹脂
204 ポリイミド樹脂コート層
210 多層ビルドアップ基板
211 コア基板
212 貫通スルーホール
213 ビルドアップ樹脂
214 フィルドビア
215 ソルダーレジスト
216 半田ボール
217 スパイラルビア
218 フィルドスタックビア
219 ビア破断部
Claims (3)
- 導体層と、
前記導体層の表面に形成される第1の凸部と、
前記導体層上に形成される第1の絶縁層と、
前記第1の絶縁層に形成され、前記第1の凸部を露出させる第1の開口部と、
前記第1の開口部内に配置され、前記第1の凸部が底部に埋め込まれる第1のフィルドビアと、
前記第1の絶縁膜及び前記第1のフィルドビア上に形成される第2の絶縁層と、
前記第2の絶縁層に形成される第2の開口部と、
前記第2の開口部内に配置され、前記第1のフィルドビアに接続される第2のフィルドビアと、
を備えることを特徴とする配線基板。 - 請求項1に記載の配線基板において、
前記第1のフィルドビアの表面に形成され、前記第2のフィルドビアの底部に埋め込まれる第2の凸部をさらに備えることを特徴とする配線基板。 - 請求項1または請求項2に記載の配線基板に半導体素子を実装してなる半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012084282A JP5454605B2 (ja) | 2012-04-02 | 2012-04-02 | 配線基板及び半導体装置 |
Applications Claiming Priority (1)
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JP2012084282A JP5454605B2 (ja) | 2012-04-02 | 2012-04-02 | 配線基板及び半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008007272A Division JP5125531B2 (ja) | 2008-01-16 | 2008-01-16 | 配線基板及び半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012138628A true JP2012138628A (ja) | 2012-07-19 |
JP5454605B2 JP5454605B2 (ja) | 2014-03-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012084282A Expired - Fee Related JP5454605B2 (ja) | 2012-04-02 | 2012-04-02 | 配線基板及び半導体装置 |
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JP (1) | JP5454605B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014188760A1 (ja) * | 2013-05-21 | 2014-11-27 | 株式会社村田製作所 | モジュール |
JP2015534287A (ja) * | 2012-11-09 | 2015-11-26 | アムコア テクノロジー インコーポレイテッドAmkor Technology, Inc. | 半導体デバイス及びその製造方法 |
JP2017163027A (ja) * | 2016-03-10 | 2017-09-14 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0715140A (ja) * | 1993-06-25 | 1995-01-17 | Hitachi Chem Co Ltd | 多層プリント配線板の製造方法 |
JP2000294931A (ja) * | 1999-04-07 | 2000-10-20 | Shinko Electric Ind Co Ltd | 多層配線基板及びその製造方法 |
JP2003133736A (ja) * | 2001-10-25 | 2003-05-09 | Kyocera Corp | 多層配線基板 |
JP2006216713A (ja) * | 2005-02-02 | 2006-08-17 | Ibiden Co Ltd | 多層プリント配線板 |
JP2006305721A (ja) * | 2005-04-29 | 2006-11-09 | Ceratizit Austria Gmbh | 被覆工具 |
-
2012
- 2012-04-02 JP JP2012084282A patent/JP5454605B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0715140A (ja) * | 1993-06-25 | 1995-01-17 | Hitachi Chem Co Ltd | 多層プリント配線板の製造方法 |
JP2000294931A (ja) * | 1999-04-07 | 2000-10-20 | Shinko Electric Ind Co Ltd | 多層配線基板及びその製造方法 |
JP2003133736A (ja) * | 2001-10-25 | 2003-05-09 | Kyocera Corp | 多層配線基板 |
JP2006216713A (ja) * | 2005-02-02 | 2006-08-17 | Ibiden Co Ltd | 多層プリント配線板 |
JP2006305721A (ja) * | 2005-04-29 | 2006-11-09 | Ceratizit Austria Gmbh | 被覆工具 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015534287A (ja) * | 2012-11-09 | 2015-11-26 | アムコア テクノロジー インコーポレイテッドAmkor Technology, Inc. | 半導体デバイス及びその製造方法 |
WO2014188760A1 (ja) * | 2013-05-21 | 2014-11-27 | 株式会社村田製作所 | モジュール |
US9832871B2 (en) | 2013-05-21 | 2017-11-28 | Murata Manufacturing Co, Ltd. | Module |
JP2017163027A (ja) * | 2016-03-10 | 2017-09-14 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
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JP5454605B2 (ja) | 2014-03-26 |
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