JP2012129429A - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

Info

Publication number
JP2012129429A
JP2012129429A JP2010281121A JP2010281121A JP2012129429A JP 2012129429 A JP2012129429 A JP 2012129429A JP 2010281121 A JP2010281121 A JP 2010281121A JP 2010281121 A JP2010281121 A JP 2010281121A JP 2012129429 A JP2012129429 A JP 2012129429A
Authority
JP
Japan
Prior art keywords
etching
frequency power
plasma
wafer
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010281121A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012129429A5 (enExample
Inventor
Michikazu Morimoto
未知数 森本
Mamoru Yakushiji
守 薬師寺
Tomoyuki Watanabe
智行 渡辺
Norihiko Ikeda
紀彦 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010281121A priority Critical patent/JP2012129429A/ja
Publication of JP2012129429A publication Critical patent/JP2012129429A/ja
Publication of JP2012129429A5 publication Critical patent/JP2012129429A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2010281121A 2010-12-17 2010-12-17 プラズマ処理方法 Pending JP2012129429A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010281121A JP2012129429A (ja) 2010-12-17 2010-12-17 プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010281121A JP2012129429A (ja) 2010-12-17 2010-12-17 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2012129429A true JP2012129429A (ja) 2012-07-05
JP2012129429A5 JP2012129429A5 (enExample) 2014-01-23

Family

ID=46646147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010281121A Pending JP2012129429A (ja) 2010-12-17 2010-12-17 プラズマ処理方法

Country Status (1)

Country Link
JP (1) JP2012129429A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016131235A (ja) * 2015-01-09 2016-07-21 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11297679A (ja) * 1998-02-13 1999-10-29 Hitachi Ltd 試料の表面処理方法および装置
JP2000012529A (ja) * 1998-06-26 2000-01-14 Hitachi Ltd 表面加工装置
JP2002324967A (ja) * 2001-04-24 2002-11-08 Ngk Spark Plug Co Ltd 基板の製造方法
JP2004064060A (ja) * 2002-06-06 2004-02-26 Nec Corp 薄膜トランジスタ及び積層膜パターンの形成方法
JP2007053391A (ja) * 2006-09-28 2007-03-01 Hitachi Ltd 半導体集積回路装置の製造方法
JP2010003725A (ja) * 2008-06-18 2010-01-07 Sumitomo Precision Prod Co Ltd シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
JP2010519758A (ja) * 2007-02-21 2010-06-03 アプライド マテリアルズ インコーポレイテッド パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11297679A (ja) * 1998-02-13 1999-10-29 Hitachi Ltd 試料の表面処理方法および装置
JP2000012529A (ja) * 1998-06-26 2000-01-14 Hitachi Ltd 表面加工装置
JP2002324967A (ja) * 2001-04-24 2002-11-08 Ngk Spark Plug Co Ltd 基板の製造方法
JP2004064060A (ja) * 2002-06-06 2004-02-26 Nec Corp 薄膜トランジスタ及び積層膜パターンの形成方法
JP2007053391A (ja) * 2006-09-28 2007-03-01 Hitachi Ltd 半導体集積回路装置の製造方法
JP2010519758A (ja) * 2007-02-21 2010-06-03 アプライド マテリアルズ インコーポレイテッド パルス化したサンプルバイアスを用いる、半導体構造をエッチングするためのパルス化プラズマシステム
JP2010003725A (ja) * 2008-06-18 2010-01-07 Sumitomo Precision Prod Co Ltd シリコン構造体の製造方法及びその製造装置並びにその製造プログラム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016131235A (ja) * 2015-01-09 2016-07-21 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Similar Documents

Publication Publication Date Title
US20250118566A1 (en) Plasma processing method and plasma processing device
TWI880421B (zh) 電漿處理裝置、控制方法、處理器及非暫時性電腦可讀記錄媒體
CN104103486B (zh) 等离子体处理方法以及等离子体处理装置
TWI604498B (zh) Plasma processing apparatus and plasma processing method
JP6488150B2 (ja) プラズマ処理装置およびプラズマ処理方法
KR101257359B1 (ko) 플라즈마 처리장치 및 플라즈마 처리방법
JP6643212B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP6298867B2 (ja) プラズマ処理方法およびプラズマ処理装置
TW201526099A (zh) 電漿處理裝置及電漿處理方法
KR20240090877A (ko) 플라즈마 반응기 내의 전극들에 대한 이온 에너지 제어
JP5959275B2 (ja) プラズマ処理装置およびプラズマ処理方法
WO2022044216A1 (ja) プラズマ処理装置
US8404602B2 (en) Plasma oxidation method and plasma oxidation apparatus
CN117546275A (zh) 等离子处理装置
WO2018233455A1 (zh) 偏压调制方法、偏压调制系统和等离子体处理设备
CN105070627B (zh) 一种减少基片材料受高能离子轰击损伤的方法
US20250226179A1 (en) Method and system for plasma process
JP2012129429A (ja) プラズマ処理方法
WO2014174650A1 (ja) プラズマ処理方法
JP2012169390A (ja) プラズマ処理方法
US20250364211A1 (en) System and method for plasma process

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120521

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131202

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131202

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140722

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140819

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141008

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20150310