JP2012119794A - 電子回路 - Google Patents
電子回路 Download PDFInfo
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- JP2012119794A JP2012119794A JP2010265785A JP2010265785A JP2012119794A JP 2012119794 A JP2012119794 A JP 2012119794A JP 2010265785 A JP2010265785 A JP 2010265785A JP 2010265785 A JP2010265785 A JP 2010265785A JP 2012119794 A JP2012119794 A JP 2012119794A
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- transistor
- distributed constant
- transistors
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- 239000003990 capacitor Substances 0.000 claims description 62
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000004088 simulation Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0283—Reducing the number of DC-current paths
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
【解決手段】制御端子と、第1端子と、第2端子と、を有する第1トランジスタT1と、制御端子に前記第1トランジスタの第2端子が接続し、第2端子に直流電源が接続される第2トランジスタT2と、前記第2トランジスタの第1端子から前記第1トランジスタの第2端子に直流電流を供給する、互いに独立した配線からなる複数の直流経路11、12と、前記複数の直流経路内にそれぞれ直列に設けられた分布定数線路L11、L12と、を具備する電子回路。
【選択図】図2
Description
20 信号経路
C1〜C82 キャパシタ
L1〜L22 分布定数線路
R1〜R4 抵抗
T1 第1トランジスタ
T2 第2トランジスタ
Claims (8)
- 制御端子と、第1端子と、第2端子と、を有する第1トランジスタと、
制御端子に前記第1トランジスタの第2端子が接続し、第2端子に直流電源が接続される第2トランジスタと、
前記第2トランジスタの第1端子から前記第1トランジスタの第2端子に直流電流を供給する、互いに独立した配線からなる複数の直流経路と、
前記複数の直流経路内にそれぞれ直列に設けられた分布定数線路と、
を具備することを特徴とする電子回路。 - 前記複数の直流経路に、それぞれ前記分布定数線路と直列に設けられた第1抵抗を具備することを特徴とする請求項1記載の電子回路。
- 前記第2トランジスタは複数並列に設けられ、
前記複数の第2トランジスタの第1端子のそれぞれは、前記第1トランジスタの第2端子との間で、前記複数の直流経路のうち1つを介して接続されていることを特徴とする請求項1または2記載の電子回路。 - 前記第1トランジスタは複数並列に設けられてなることを特徴とする請求項1から3のいずれか一項に記載の電子回路。
- 前記第1トランジスタは複数設けられ、
前記複数の第1トランジスタの第1端子は、それぞれ、第2抵抗を介し接地されていることを特徴とする請求項1から4のいずれか一項に記載の電子回路。 - 前記第1抵抗のそれぞれは、前記分布定数線路と前記第2トランジスタの第1端子との間に設けられ、
前記第1抵抗と、前記複数の分布定数線路と、の間の複数の接続点は、キャパシタを介し接地されていることを特徴とする請求項2記載の電子回路。 - 前記複数の直流経路に設けられた前記分布定数線路のリアクタンス成分は同じであることを特徴とする請求項1から6のいずれか一項に記載の電子回路。
- 前記複数の直流経路にそれぞれ設けられた前記第1抵抗の抵抗値は同じであることを特徴とする請求項2記載の電子回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010265785A JP5655526B2 (ja) | 2010-11-29 | 2010-11-29 | 電子回路 |
US13/305,186 US8421537B2 (en) | 2010-11-29 | 2011-11-28 | Electronic circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010265785A JP5655526B2 (ja) | 2010-11-29 | 2010-11-29 | 電子回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012119794A true JP2012119794A (ja) | 2012-06-21 |
JP5655526B2 JP5655526B2 (ja) | 2015-01-21 |
Family
ID=46126216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010265785A Expired - Fee Related JP5655526B2 (ja) | 2010-11-29 | 2010-11-29 | 電子回路 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8421537B2 (ja) |
JP (1) | JP5655526B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016058920A (ja) * | 2014-09-10 | 2016-04-21 | 住友電気工業株式会社 | 進行波型増幅器 |
DE102017200782A1 (de) | 2016-03-29 | 2017-10-05 | Mitsubishi Electric Corporation | Stromwiederverwendungs-Feldeffekttransistor-Verstärker |
WO2018179088A1 (ja) * | 2017-03-28 | 2018-10-04 | 三菱電機株式会社 | 電流再利用型電界効果トランジスタ増幅器 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3041135A1 (en) * | 2014-12-30 | 2016-07-06 | Elettronica S.p.A. | Active balun and monolithic microwave integrated circuit incorporating the same for ultra-wide band reception |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5798018U (ja) * | 1980-12-09 | 1982-06-16 | ||
JPH02265309A (ja) * | 1989-04-05 | 1990-10-30 | Mitsubishi Electric Corp | マイクロ波多段増幅器 |
WO2002056461A1 (fr) * | 2001-01-10 | 2002-07-18 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a semi-conducteurs a haute frequence |
JP2006325096A (ja) * | 2005-05-20 | 2006-11-30 | Matsushita Electric Ind Co Ltd | 高周波電力増幅器 |
JP2007228094A (ja) * | 2006-02-21 | 2007-09-06 | Toshiba Corp | 増幅器 |
JP2008035083A (ja) * | 2006-07-27 | 2008-02-14 | Eudyna Devices Inc | 電子回路装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6020848A (en) * | 1998-01-27 | 2000-02-01 | The Boeing Company | Monolithic microwave integrated circuits for use in low-cost dual polarization phased-array antennas |
US7459970B2 (en) * | 2006-01-11 | 2008-12-02 | Sirf Technology, Inc. | Method and apparatus for optimizing power dissipation in a low noise amplifier |
-
2010
- 2010-11-29 JP JP2010265785A patent/JP5655526B2/ja not_active Expired - Fee Related
-
2011
- 2011-11-28 US US13/305,186 patent/US8421537B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5798018U (ja) * | 1980-12-09 | 1982-06-16 | ||
JPH02265309A (ja) * | 1989-04-05 | 1990-10-30 | Mitsubishi Electric Corp | マイクロ波多段増幅器 |
WO2002056461A1 (fr) * | 2001-01-10 | 2002-07-18 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a semi-conducteurs a haute frequence |
JP2006325096A (ja) * | 2005-05-20 | 2006-11-30 | Matsushita Electric Ind Co Ltd | 高周波電力増幅器 |
JP2007228094A (ja) * | 2006-02-21 | 2007-09-06 | Toshiba Corp | 増幅器 |
JP2008035083A (ja) * | 2006-07-27 | 2008-02-14 | Eudyna Devices Inc | 電子回路装置 |
Non-Patent Citations (1)
Title |
---|
JPN6014020000; Yutaka Mimino: 'HIGH GAIN-DENSITY K-BAND P-HEMT LNA MMIC FOR LMDS' 2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM Vol.1, 20000611, pp17-20, IEEE * |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016058920A (ja) * | 2014-09-10 | 2016-04-21 | 住友電気工業株式会社 | 進行波型増幅器 |
DE102017200782A1 (de) | 2016-03-29 | 2017-10-05 | Mitsubishi Electric Corporation | Stromwiederverwendungs-Feldeffekttransistor-Verstärker |
JP2017183895A (ja) * | 2016-03-29 | 2017-10-05 | 三菱電機株式会社 | 電流再利用型電界効果トランジスタ増幅器 |
US10116273B2 (en) | 2016-03-29 | 2018-10-30 | Mitsubishi Electric Corporation | Current reuse field effect transistor amplifier |
DE102017200782B4 (de) | 2016-03-29 | 2021-11-11 | Mitsubishi Electric Corporation | Stromwiederverwendungs-Feldeffekttransistor-Verstärker |
WO2018179088A1 (ja) * | 2017-03-28 | 2018-10-04 | 三菱電機株式会社 | 電流再利用型電界効果トランジスタ増幅器 |
KR20190120291A (ko) | 2017-03-28 | 2019-10-23 | 미쓰비시덴키 가부시키가이샤 | 전류 재이용형 전계 효과 트랜지스터 증폭기 |
CN110463035A (zh) * | 2017-03-28 | 2019-11-15 | 三菱电机株式会社 | 电流再利用型场效应晶体管放大器 |
US11012036B2 (en) | 2017-03-28 | 2021-05-18 | Mitsubishi Electric Corporation | Current reuse type field effect transistor amplifier |
CN110463035B (zh) * | 2017-03-28 | 2023-05-16 | 三菱电机株式会社 | 电流再利用型场效应晶体管放大器 |
DE112017007348B4 (de) | 2017-03-28 | 2024-02-08 | Mitsubishi Electric Corporation | Stromwiederverwendungstyp-Feldeffekttransistor-Verstärker |
Also Published As
Publication number | Publication date |
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US8421537B2 (en) | 2013-04-16 |
JP5655526B2 (ja) | 2015-01-21 |
US20120133441A1 (en) | 2012-05-31 |
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