JP2012094843A - Circuit board, power supply structure, method for manufacturing circuit board, and method for manufacturing power supply structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power supply structure which is capable of preventing electromagnetic radiation and fluctuation of a power supply voltage due to resonance of electromagnetic energy between power supply layers without requiring a decoupling capacitor, and to provide a circuit board.SOLUTION: A power supply structure 1 comprising two power supply layers 11 and 13 and an interlayer insulating film 15 held between the power supply layers 11 and 13 is characterized in that at least one of the power supply layers 11 and 13 is composed of a conductive fine particle-dispersed film a having conductive fine particles dispersed in an organic material. The circuit board is provided with the power supply structure 1 having such a configuration.

Description

  The present invention relates to a circuit board and a power supply structure, and more particularly, to a power supply structure in which an interlayer insulating film is sandwiched between two power supply layers in the substrate and a circuit board including the power supply structure. The present invention also relates to a method for manufacturing such a circuit board and a method for manufacturing a power supply structure.

  In recent years, electronic devices equipped with IC chips such as computers and mobile communication devices have been increased in speed and mounting density. In such an electronic device, it is an important issue to prevent fluctuations in power supply voltage and generation of electromagnetic noise caused by the switching operation of the semiconductor integrated circuit formed on the IC chip. Therefore, a decoupling capacitor is connected in parallel to the power supply terminal of the IC chip to form a decoupling circuit, and the decoupling capacitor absorbs a sudden change in current caused by the switching operation of the semiconductor integrated circuit, thereby reducing the power supply voltage. Fluctuation and generation of electromagnetic noise are suppressed.

  In the decoupling circuit as described above, the parasitic inductance generated in the path between the IC chip and the decoupling capacitor affects the power supply voltage. For this reason, a flat power supply layer (hereinafter referred to as a solid power supply layer) is placed opposite to the inside of the circuit board on which the IC chip is mounted, and this is placed close to the IC chip as a decoupling capacitor, thereby reducing the parasitic inductance. The structure to hold down is adopted. In such a decoupling capacitor, metal plates are provided on both surfaces of a dielectric layer, and this is used as a solid power supply layer (see, for example, Patent Document 1 below).

  However, in a circuit board provided with a solid power supply layer, electromagnetic energy resonates between two solid power supply layers when a high-frequency power supply current flows. This resonance becomes a factor of electromagnetic radiation and a new factor causing fluctuations in the power supply voltage.

  Therefore, as a configuration for preventing this resonance, a configuration in which a plurality of decoupling capacitors corresponding to each frequency band are arranged on the circuit board in a state of being connected in parallel with the IC chip is implemented.

  Further, as another configuration for preventing the resonance, a pair wiring structure in which the power supply wiring and the installation wiring wired from the functional block of the semiconductor integrated circuit are juxtaposed at a predetermined interval is formed without branching inside the package. A configuration in which this pair wiring structure is synthesized by a power supply circuit has been proposed (Patent Document 2 below).

JP-A-8-181445 (see paragraphs 0013 to 0014) Japanese Patent Laying-Open No. 2009-64843 (see paragraphs 0011 and 0015)

  However, in the configuration in which a plurality of decoupling capacitors corresponding to each frequency band are arranged on the circuit board, the high integration and miniaturization of electronic devices are hindered by the presence of the decoupling capacitors. Moreover, in order to further increase the switching speed of the semiconductor integrated circuit, it is necessary to add a decoupling capacitor corresponding to a higher frequency band. Therefore, the layout design margin of the IC chip and other functional elements on the circuit board is further narrowed. Furthermore, since an actual capacitor has a resistance component and an inductance component, it has a self-resonant frequency, and there is a great technical problem that the impedance does not decrease in a high-frequency region of the GHz order. A semiconductor integrated circuit in the cloud computer generation is required to have a switching speed of 10 GHz or more. However, at present, there is no decoupling capacitor having a resonance point near 10 GHz or higher. Therefore, the speeding up of electronic equipment using a decoupling circuit has reached its limit.

  On the other hand, in the configuration in which the pair wiring structure is synthesized by the power supply circuit, it takes time to design and form the pattern for forming the pair wiring structure.

  Therefore, the present invention provides a power supply structure and a circuit board capable of preventing fluctuations in electromagnetic radiation and power supply voltage due to resonance of electromagnetic energy between power supply layers without requiring a decoupling capacitor. The purpose is to achieve high integration and miniaturization. Another object of the present invention is to provide a method for manufacturing such a circuit board and a method for manufacturing a power supply structure.

  A circuit board and a power supply structure of the present invention for achieving such an object include an interlayer insulating film and two power supply layers provided in a state of sandwiching the interlayer insulating film, At least one has a conductive fine particle dispersed film in which conductive fine particles are dispersed in an organic material.

  In the circuit board and power supply structure having such a configuration, at least one of the power supply layers is formed of a conductive fine particle dispersed film. The conduction in the conductive fine particle dispersed film is achieved by ohmic junction at the contact portion between the conductive fine particles contained in the film. Even if the conductive fine particles are not in contact with each other, conduction can be achieved by a tunnel effect or a hot carrier effect. In addition, even when the conductive fine particles are separated from each other, conduction is assisted by many types of near-field effects such as a discharge effect due to electric field concentration and a Schottky effect if the material that disperses the conductive fine particles is a semiconductor. The In the various conductive states as described above, except for the ohmic junction, the time required for the phenomenon change is required for the progress of the electromagnetic energy, which causes a time delay for the progress of the electromagnetic energy.

  In addition, there is a voltage difference corresponding to the interval between the conductive fine particles between the conductive fine particles, and when this voltage difference changes, a displacement current according to the capacity between them flows. That is, capacitive coupling. This not only assists the transmission of electromagnetic energy, but also causes a time delay with respect to the progress of the electromagnetic energy.

  As a more complicated phenomenon, when there is an electric field vector in the traveling direction of electromagnetic energy, an electron density wave corresponding to the electric field appears on the surface of the conductive fine particles. Quantities of this dense wave energy are called plasmons, but the energy exchange phenomenon between plasmons and photons (quantized electromagnetic energy) also assists in the transmission of electromagnetic energy and It becomes a factor causing time delay.

  In the case of using conductive fine particles made of non-oxidizing metal such as silver or gold, or graphite, the ohmic junction component becomes large. On the other hand, even when conductive fine particles made of an oxidizing metal such as copper or aluminum are used, an ohmic junction is ensured to some extent by mechanical oxide film destruction at the contact portion. However, in both cases, the conduction state is maintained by many components that cause a time delay with respect to the progress of electromagnetic energy other than the ohmic junction as described above.

  For this reason, by using a conductive fine particle dispersion film in which conductive fine particles are dispersed in at least one of the two power supply layers, the progress of electromagnetic energy in all frequency bands caused by changing currents and voltages, A time delay is complicatedly caused by countless contacts and non-contacts between the conductive fine particles. This makes it possible to suppress the resonance of electromagnetic energy between the power supply layers in a wide frequency band without using a decoupling capacitor. Moreover, these conduction phenomena other than the ohmic junction do not result in a loss of electromagnetic energy, resulting in an energy efficient time delay dispersion circuit.

  Moreover, this invention is also a manufacturing method of the circuit board of such a structure, and the manufacturing method of a power supply structure, and performs the following procedure. That is, first, a step of forming a conductive fine particle dispersed film formed by dispersing conductive fine particles in an organic material as a power source layer on at least one surface of the interlayer insulating film is performed. Next, a step of curing the organic material without deforming the conductive fine particles is performed. As a result, the conductive particles are kept close to each other up to the distance where the total action occurs, or partially in contact with each other, so that the conductive state is maintained.

  According to the manufacturing method as described above, the conductive fine particle dispersed film in which the conductive fine particles are dispersed can be formed as the power supply layer. For this reason, the power supply structure and circuit board of the structure of the present invention described above can be obtained.

  As described above, according to the power supply structure and the circuit board of the present invention, the electromagnetic energy between the power supply layers can be reduced without using a decoupling capacitor by the action of the conductive fine particle dispersion film constituting at least one of the power supply layers. Resonance can be suppressed in a wide frequency band. For this reason, fluctuations in electromagnetic radiation and power supply voltage can be prevented. As a result, by using a circuit board provided with this power supply structure, it is possible to achieve high speed as well as high integration and miniaturization of electronic equipment.

It is a cross-sectional schematic diagram of the power supply structure of 1st Embodiment. It is a cross-sectional schematic diagram of the power supply structure of 2nd Embodiment. It is a cross-sectional schematic diagram of the power supply structure of 3rd Embodiment. It is a cross-sectional schematic diagram of the circuit board of 4th Embodiment. It is a manufacturing process figure (the 1) of a circuit board of a 4th embodiment. It is a manufacturing process figure (the 2) of a circuit board of a 4th embodiment. 2A is a plan view and a cross-sectional view of a circuit board manufactured in Example 1. FIG. It is a graph of Z11 measured about the circuit board (samples S11, S12, C1, C1) of Example 1. It is a graph of Z11 measured about the circuit board (samples S11, S13, S14, C1) of Example 1. It is the graph of Z11 measured about the circuit board (sample S11, S15, C1) of Example 1. FIG. It is a graph of Z11 measured about the circuit board (samples S11, S16, S17, C1) of Example 1. It is a graph of Z11 measured about the circuit board (samples S11, S18, S19, C1) of Example 1. 6 is a cross-sectional view for explaining a layer configuration of a circuit board manufactured in Example 2. FIG. It is a graph of Z11 measured about the circuit board of Example 2. It is a graph of Z21 measured about the circuit board of Example 2. It is the graph of the radiation noise measured about the circuit board of Example 2. 6 is a block diagram of a circuit board manufactured in Example 3. FIG. 6 is a cross-sectional view for explaining a layer configuration of a circuit board manufactured in Example 3. FIG. It is a graph of the power supply voltage fluctuation | variation measured about the circuit board of Example 3. FIG. It is the graph which measured the signal rise time at the time of operating the circuit board of Example 3 at high speed.

Hereinafter, embodiments of the present invention will be described in the following order based on the drawings.
1. First embodiment (first example of power supply structure)
2. Second Embodiment (Second Example of Power Supply Structure)
3. Third Embodiment (Third Example of Power Supply Structure)
4). Fourth embodiment (an example of a circuit board provided with a power supply structure)
In each of these embodiments, the structure will be described first, and then the manufacturing method will be described. Moreover, the same code | symbol is attached | subjected to the same component and description of the overlapping structure is abbreviate | omitted.

<< 1. First Embodiment >>
<Configuration of power supply structure-1>
FIG. 1 is a schematic cross-sectional view of a power supply structure 1 according to the first embodiment. The power supply structure 1 shown in FIG. 1 has a three-layer structure including two power supply layers 11 and 13 and an interlayer insulating film 15 sandwiched between them. The two power supply layers 11 and 13 are connected to different power supplies. Hereinafter, the details of these components will be described in the order of the power supply layer 11, the power supply layer 13, and the interlayer insulating film 15. The two power supply layers 11 and 13 are used as a pair in which a high voltage is applied to one and a low voltage is applied to the other, so that they are referred to each other. Usually, one is called a power supply and the other is called a ground. The Here, either of the two power supply layers 11 and 13 may be a power supply and which may be a ground.

  In the power supply structure 1, the power supply layers 11 and 13 may not be provided on the entire surface of the interlayer insulating film 15, and may be provided on both surfaces of the interlayer insulating film 15 as long as the interlayer insulating film 15 is sandwiched. The power supply layers 11 and 13 may be patterned. For example, when used for supplying a plurality of different power supply voltages, at least a power supply layer used as a power supply among the power supply layers 11 and 13 is patterned into a plurality of divided shapes on the interlayer insulating film 15. To do. Further, if the interlayer insulating film 15 is held between the patterned power supply layers 11 and 13, both the power supply layers 11 and 13 may be patterned, so that a plurality of power supply structure portions can be formed. Provided power supply structure.

  The power supply layer 11 is configured as a thin film obtained by extending a bulk material in a plane. The material constituting the power supply layer 11 is not limited as long as the material has good conductivity. For example, copper (Cu), aluminum (Al), gold (Au), silver (Ag), and An alloy containing these as the main components is used as the metal foil. Here, for example, the power supply layer 11 made of copper foil is provided.

  The power supply layer 13 has a conductive fine particle dispersed film a in which conductive fine particles are dispersed in an organic material. Such a power supply layer 13 may be configured as a single layer structure of the conductive fine particle dispersion film a as shown in the figure, or a laminate of the conductive fine particle dispersion film a and a conductive material such as a copper foil. It may be configured as a structure. In the case of a laminated structure, the conductive fine particle dispersion film a is provided in contact with the interlayer insulating film 15.

  The conductive fine particles used here are made of a material having good conductivity. Such conductive fine particles are configured using gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), or graphite. These materials may be used alone, or may be used as an alloy mainly composed of these materials. Furthermore, conductive fine particles may be formed by mixing a plurality of types of particles made of these materials and particles made of other conductive materials.

  These conductive fine particles are used in the shape of flakes (flakes), spheres, and long particles, and a plurality of shapes may be used in combination.

When graphite is used as the conductive fine particles, disc-shaped graphite particles having a and b surfaces as the bottom are used. The graphite particles are particles in which graphene is laminated in the ab plane direction. Here, copper has a free electron density of 1.3 × 10 ²³ / cm ³ but an electron mobility of only 5.1 × 10 ¹ cm ² / V · s. On the other hand, the a and b surfaces of graphite have a free electron density of only 10 ¹³ / cm ^3, but have a high electron mobility of 1 × 10 ⁴ cm ² / V · s and a long mean free path. Therefore, it is said that the electrical conductivity of the a and b surfaces of graphite is better than that of copper. Note that the c-axis direction of graphite has a large resistance. For this reason, it is desirable to use thin crystalline particles of graphene as the conductive fine particles.

  The shape of the conductive fine particles is mainly, for example, a particle shape having a long side direction of 50 μm or less, a short side direction of 10 μm or less, and a thickness of 5 μm or less. It shall be included in the shape.

  As the organic material for dispersing conductive fine particles as described above, a material capable of dispersing conductive fine particles is used. As such an organic material, for example, an organic insulating material generally used such as an epoxy resin, a polyimide resin, a polyamideimide resin, or a BT (bismaleide triazine) resin can be appropriately selected and used.

  The conductive fine particle dispersion film a obtained by dispersing the conductive fine particles as described above in an organic material and then curing the conductive fine particles has an electric resistivity of the bulk material of the material constituting the conductive fine particles. The ratio is preferably 10 times or less, more preferably about 5 times. The electrical resistivity of the conductive fine particle dispersion film a can be lowered by increasing the film thickness.

  The conductive fine particle dispersion film a is formed using a paste in which conductive fine particles are dispersed in an organic material diluted with a solvent. For example, it is formed using a commercially available silver paste. The silver paste is formed by dispersing silver particles in a solution obtained by diluting, for example, a precursor of an epoxy resin as an organic material, a curing agent, and other additives as necessary with a solvent. By forming a thin film using such a silver paste and curing the organic material in the thin film, the conductive particles are brought close to each other or partially in contact with each other up to the distance at which the total action occurs. Thus, the conductive state is maintained, and the conductive fine particle dispersed film a is obtained.

  In such a conductive fine particle dispersed film a, the solvent may be removed from the film in the process of curing or drying the organic material (for example, epoxy resin or polyamideimide resin). The conductive fine particle dispersion film a may contain additives such as a dispersant and a cosolvent for improving the dispersibility of the conductive fine particles.

  The film thickness of the power supply layer 11 made of, for example, copper foil and the power supply layer 13 made of the conductive fine particle dispersed film a are determined by the current capacity handled by the power supply structure 1. If the power supply structure 1 is used in an electronic circuit, the power supply layers 11 and 13 preferably have a thickness of several μm to several tens of μm. If the power supply structure 1 is used in a power circuit, the power supply layers 11 and 13 have a thickness of several μm to several tens of mm.

  The interlayer insulating film 15 sandwiched between the power supply layers 11-13 as described above is configured using an organic material that can be diluted in the same solvent as the organic material that forms the conductive fine particle dispersed film a. preferable. In this case, it is only necessary that the precursors before drying or curing the respective organic materials constituting the interlayer insulating film 15 and the conductive fine particle dispersion film a can be diluted or dissolved with the same solvent. . For the interlayer insulating film 15, for example, a material similar to the organic material constituting the conductive fine particle dispersed film a is used. For example, when the conductive fine particle dispersion film a in which silver particles are dispersed in an epoxy resin is provided, an epoxy resin, a polyimide resin, a polyamideimide resin, or the like is used for the interlayer insulating film 15. These resins and their precursors can be diluted or dissolved with a solvent such as alcohol, ketone or ester. Other specific examples of solvents that can be diluted or dissolved include N-methylpyrrolidone, γ-butyrolactone, diglyme, cyclopentanone, and ethyl benzoate.

  In the interlayer insulating film 15 made of such an organic insulating film, the solvent may be removed from the film in the course of curing or drying of the organic material.

  Further, the interlayer insulating film 15 is used by adjusting to an appropriate molecular structure and dielectric constant according to the performance required for the power supply structure 1. For example, when the interlayer insulating film 15 made of polyamideimide resin is used, the dielectric constant is adjusted by improving the molecular structure of polyamideimide, or dispersing high dielectric constant powder or low dielectric constant powder in the resin. The

  The film thickness of the interlayer insulating film 15 as described above is set so that a predetermined characteristic impedance can be obtained in the power supply layers 11 and 13. If this power supply structure 1 is used for an electronic circuit, the film thickness of the interlayer insulating film 15 is set to several μm to 200 μm. Moreover, if this power supply structure 1 is used for a power circuit, the film thickness of the interlayer insulating film 15 is set to several μm to several mm. In such a range, the power source layers 11 and 13 have a characteristic impedance of 0.01Ω to several Ω, which is suitable as a high-speed power source characteristic impedance.

  The power supply structure 1 having such a configuration is used as a circuit board or other applications, for example, a power cable or a bus bar. In this case, for example, it is used by being connected to the substrate extraction electrode. The power supply structure 1 may be used as a configuration embedded in a connector. Further, the power supply structure 1 may have the power supply layers 11 and 13 covered with an inorganic insulating film or an organic insulating film.

<Method for Manufacturing Power Supply Structure-1>
The manufacturing method of the power supply structure 1 as described above is as follows.

  First, the power supply layer 11 made of, for example, copper foil is prepared, and an organic insulating film is formed thereon as the interlayer insulating film 15. At this time, a solution obtained by diluting or dissolving an organic material with a solvent is applied onto the power supply layer 11 and then subjected to a drying process to obtain the interlayer insulating film 15.

  Next, a conductive fine particle dispersion film a is formed on the interlayer insulating film 15. At this time, a paste in which conductive fine particles are dispersed in a solution in which an organic material is diluted is applied onto the interlayer insulating film 15. In diluting the organic material, it is preferable to use the same solvent as that obtained by diluting or dissolving the organic material constituting the interlayer insulating film 15. Thereafter, the applied film is dried to obtain a conductive fine particle dispersed film a.

  Next, a step of curing or drying the organic material of the conductive fine particle dispersion film a is performed. In this step, the interlayer insulating film 15 is simultaneously cured. Here, it is important to cure the organic material without deforming the conductive fine particles in the conductive fine particle dispersed film a and to maintain the dispersed state of the conductive fine particles in the film. Therefore, here, the heat treatment is performed at a temperature lower than the melting point of the conductive fine particles in the conductive fine particle dispersed film a. As a result, the organic material constituting the conductive fine particle dispersion film a and the organic material constituting the interlayer insulating film 15 are cured or dried. Further, when the organic material constituting the conductive fine particle dispersion film a and the organic material constituting the interlayer insulating film 15 are photocurable resins, curing by light irradiation may be performed. The conductive fine particle dispersion film a thus obtained becomes the power supply layer 13. If the power supply layer 13 is configured as a laminated structure of the conductive fine particle dispersion film a and a conductive material such as copper foil, the conductive fine particle dispersion film a produced as described above is used. A conductive material such as copper foil is laminated on the top of the substrate. As a result, the power supply layer 13 having a laminated structure of the conductive fine particle dispersion film a on the interlayer insulating film 15 side and the conductive material on the upper side is obtained.

  The power supply structure 1 is completed as described above. The power supply structure 1 obtained in this way is configured by using a conductive fine particle dispersion film a in which one of the two power supply layers 11 and 13 has conductive fine particles dispersed in an organic material. Has been. As a result, the progression of electromagnetic energy in all frequency bands caused by the current and voltage changing as described above is complicated at the innumerable contacts and non-contacts between the conductive fine particles dispersed in the conductive fine particle dispersed film a. This will cause a time delay. Therefore, by using the power supply structure 1 of the first embodiment, it is possible to suppress the resonance of electromagnetic energy between the power supply layers 11-13 in a wide frequency band including a high-frequency component near several hundred MHz to 10 GHz. Thus, it becomes possible to prevent electromagnetic radiation and to supply a stable power supply voltage.

  In addition, such an effect is such that the self-impedance and the mutual impedance measured in the following examples are suppressed to values lower than those of the conventional configuration in a wide frequency band including several hundred MHz to around 10 GHz and higher frequency components. This was also confirmed.

  What is important here is that the above-described time delay in the progression of electromagnetic energy is not a phenomenon of loss of electromagnetic energy. For this reason, it is possible to improve the propagation, transmission, and transmission efficiency of energy. That is, it is possible to supply a power supply voltage that maintains current and voltage.

≪2. Second Embodiment >>
<Configuration of power supply structure-2>
FIG. 2 is a schematic cross-sectional view of the power supply structure 2 according to the second embodiment. The power supply structure 2 shown in FIG. 2 is different from the power supply structure of the first embodiment in that the upper part of the power supply layer 13 configured as the conductive fine particle dispersion film a is covered with the organic insulating film 17. There are other configurations similar to those of the first embodiment. That is, the power supply structure 2 includes a power supply layer 11 made of, for example, copper foil, a power supply layer 13 made of the conductive fine particle dispersion film a, an interlayer insulating film 15 sandwiched therebetween, and a conductive fine particle dispersion film a. And a four-layer structure composed of an organic insulating film 17 covering the substrate.

  The organic insulating film 17 is a film having properties similar to those of the organic insulating film constituting the interlayer insulating film 15. That is, the organic insulating film 17 is preferably configured using an organic material that can be diluted or dissolved in the same solvent as the organic material that forms the conductive fine particle dispersion film a. That is, it is only necessary that the precursor before curing the organic materials constituting the organic insulating film 17 and the conductive fine particle dispersion film a and the resin before drying can be diluted or dissolved with the same solvent. Such an organic insulating film 17 is made of, for example, the same material (for example, epoxy resin, polyimide resin, or polyamideimide resin) as the organic material constituting the conductive fine particle dispersion film a. Such an organic insulating film 17 may be thicker than the interlayer insulating film 15.

  Accordingly, the power source structure 2 is configured using an organic material in which the conductive fine particle dispersion film a and the three layers of the interlayer insulating film 15 and the organic insulating film 17 sandwiching the conductive fine particle dispersed film a are diluted or dissolved with the same solvent. It is. In such an organic insulating film 17, the solvent may be removed from the film during the curing of the organic material.

<Power Supply Structure Manufacturing Method-2>
The manufacturing method of the power supply structure 2 as described above is as follows.

  First, as in the first embodiment, the interlayer insulating film 15 is formed on the power supply layer 11 made of, for example, copper foil and dried, and then the conductive fine particle dispersed film a is formed and dried. .

  Next, the organic insulating film 17 is formed on the conductive fine particle dispersion film a. At this time, a solution obtained by diluting the organic material is applied onto the conductive fine particle dispersion film a, and then dried to obtain the organic insulating film 17. For diluting or dissolving the organic material, it is preferable to use the same solvent as that obtained by diluting or dissolving the organic material constituting the conductive fine particle dispersed film a and the interlayer insulating film 15.

  After the above, a step of curing the organic material of the conductive fine particle dispersed film a is performed. In this step, the interlayer insulating film 15 and the organic insulating film 17 are simultaneously cured. Here, as in the first embodiment, it is important to cure the organic material without deforming the conductive fine particles in the conductive fine particle dispersed film a and to maintain the dispersed state of the fine particles in the film. Therefore, here, the heat treatment is performed at a temperature lower than the melting point of the conductive fine particles in the conductive fine particle dispersed film a. As a result, the organic material constituting the conductive fine particle dispersion film a, the organic material constituting the interlayer insulating film 15, and the organic material constituting the organic insulating film 17 are cured. Further, when the organic material constituting the conductive fine particle dispersion film a, the organic material constituting the interlayer insulating film 15, and the organic material constituting the organic insulating film 17 are photocurable resins, curing by light irradiation is performed. You can go.

  The power supply structure 2 is completed as described above. As in the first embodiment, the power supply structure 2 obtained in this way has one of the two power supply layers 11 and 13 in which conductive power fine particles are obtained by dispersing conductive fine particles in an organic material. It is composed of a dispersion film a. Thereby, by using the power supply structure 2 of the second embodiment, as in the first embodiment, the resonance of electromagnetic energy between the power supply layers 11-13 includes a wide range including a high-frequency component around several hundred MHz to 10 GHz. It becomes possible to suppress in the frequency band, and it becomes possible to prevent electromagnetic radiation and to supply a stable power supply voltage.

  Such an effect is also because the self-impedance and the mutual impedance measured in the following examples are suppressed to values lower than the conventional configuration in a wide frequency band including a high-frequency component in the vicinity of several hundred MHz to 10 GHz. confirmed.

  Further, in the power supply structure 2 of the second embodiment, the conductive fine particles are formed by the organic insulating film 17 formed using an organic material that can be diluted in the same solvent as the organic material constituting the conductive fine particle dispersed film a. The dispersion film a is covered. As a result, it was confirmed in the following examples that resonance of electromagnetic energy can be suppressed on average in a wide frequency band.

  What is important here is that the above-described time delay in the progression of electromagnetic energy is not a phenomenon of loss of electromagnetic energy. For this reason, as in the first embodiment, it is possible to increase energy propagation, transmission, and transmission efficiency. That is, it is possible to supply a power supply voltage that maintains current and voltage.

≪3. Third Embodiment >>
<Configuration of power supply structure-3>
FIG. 3 is a schematic cross-sectional view of the power supply structure 3 according to the third embodiment. The power supply structure 3 shown in FIG. 3 is different from the power supply structures of the first embodiment and the second embodiment in that both of the two power supply layers 11 ′ and 13 are configured as the conductive fine particle dispersion film a. By the way. These conductive fine particle dispersion films a are covered with organic insulating films 17 and 19, respectively. That is, the power supply structure 3 has a configuration in which two conductive fine particle dispersion films a are sandwiched between the organic insulating films 17 and 19 and the interlayer insulating film 15 configured as an organic insulating film.

  The two conductive fine particle dispersion films a are the same as those in the first and second embodiments. In these conductive fine particle dispersion films a, the conductive fine particles and the organic material constituting each may be the same material or different materials. However, the organic material is preferably a material that can be diluted or dissolved in the same solvent.

  The interlayer insulating film 15 is the same as in the first embodiment and the second embodiment.

  The organic insulating films 17 and 19 are the same as the organic insulating film 17 described in the second embodiment, and an organic material that can be diluted or dissolved in the same solvent as the organic material constituting the conductive fine particle dispersion film a is used. It is preferable to be configured. The organic insulating films 17 and 19 are made of, for example, the same material (for example, epoxy resin, polyimide resin, or polyamideimide resin) as the organic material that forms the conductive fine particle dispersion film a. These organic insulating films 17 and 19 may be made of different materials as long as they are made of organic materials that can be diluted or dissolved in the same solvent. Further, the organic insulating films 17 and 19 may be thicker than the interlayer insulating film 15.

  As described above, the structure of the power supply structure 3 is obtained by diluting or dissolving the two conductive fine particle dispersion films a and a and the five layers of the interlayer insulating film 15 and the organic insulating films 17 and 19 sandwiching the conductive fine particle dispersion films a and a with the same solvent. It is the structure using the organic material used.

  As a modification of the power supply structure 3 of the third embodiment, a configuration in which the power supply layers 11 ′ and 13 made of the conductive fine particle dispersed film a are covered with an inorganic insulating film or an organic insulating film can be exemplified. .

<Method for Manufacturing Power Supply Structure-3>
In the method of manufacturing the power supply structure 3 as described above, the layers constituting the power supply structure 3 are sequentially formed from one side, and then each layer is formed without deforming the conductive fine particles in the conductive fine particle dispersed film a. A step of curing the organic material to be performed may be performed.

  That is, first, a substrate having a flat surface is prepared, and an organic insulating film 19 is formed thereon. At this time, the organic insulating film 19 is obtained by applying a solution obtained by diluting or dissolving the organic material with a solvent to the substrate, followed by drying.

  Next, a conductive fine particle dispersion film a as a power supply layer 11 ′ is formed on the organic insulating film 19. At this time, a paste in which conductive fine particles are dispersed in a solution in which an organic material is diluted is applied onto the organic insulating film 19. For diluting the organic material, it is preferable to use the same solvent in which the organic material constituting the organic insulating film 19 is diluted or dissolved. Thereafter, the applied film is dried to obtain a conductive fine particle dispersed film a.

  Thereafter, as in the second embodiment, the interlayer insulating film 15 is formed on the conductive fine particle dispersion film a serving as the power supply layer 11 ′ and dried, and then the conductive fine particle dispersion film a is formed and dried. Further, an organic insulating film 17 is formed and dried.

  Next, after the flat substrate prepared at the start of the process is peeled off from the organic insulating film 19, a process of curing the organic materials of the two conductive fine particle dispersion films a is performed. In this step, the interlayer insulating film 15 and the organic insulating films 17 and 19 are simultaneously cured. Here, as in the first embodiment, it is important to cure the organic material without deforming the conductive fine particles in the conductive fine particle dispersed film a and to maintain the dispersed state of the fine particles in the film. Therefore, here, the heat treatment is performed at a temperature lower than the melting point of the conductive fine particles in the two conductive fine particle dispersion films a. If the two conductive fine particle dispersion films a use different conductive fine particles, heat treatment is performed at a temperature lower than the melting point in accordance with the lower melting point of these conductive fine particles.

  As a result, the organic material constituting the two conductive fine particle dispersion films a, the organic material constituting the interlayer insulating film 15, and the organic material constituting the organic insulating films 17 and 19 are cured. Further, when the organic material constituting the conductive fine particle dispersion film a, the organic material constituting the interlayer insulating film 15, and the organic material constituting the organic insulating films 17 and 19 are photocurable resins, it is caused by light irradiation. Curing may be performed.

  The power supply structure 3 is completed as described above. In the power supply structure 3 thus obtained, both of the two power supply layers 11 ′ and 13 are composed of a conductive fine particle dispersed film a in which conductive fine particles are dispersed in an organic material. Thereby, by using the power supply structure 3 of the third embodiment, the resonance of the electromagnetic energy between the power supply layers 11-13 can be suppressed in a wide frequency band more reliably than in the first embodiment and the second embodiment. Therefore, it is possible to prevent electromagnetic radiation and to supply a stable power supply voltage.

  Further, in the power supply structure 3 of the third embodiment, the organic insulating films 17 and 19 are formed by using an organic material that can be diluted in the same solvent as the organic material that forms the conductive fine particle dispersed film a. The fine particle dispersion film a is covered. As a result, similar to the second embodiment, an effect of suppressing the resonance of electromagnetic energy on the average in a wide frequency band is expected.

  What is important here is that, as in the first embodiment and the second embodiment, the above-described time delay in the progression of electromagnetic energy is not a phenomenon of loss of electromagnetic energy. For this reason, it is possible to improve the propagation, transmission, and transmission efficiency of energy. That is, it is possible to supply a power supply voltage that maintains current and voltage.

<< 4. Fourth Embodiment >>
<Configuration of circuit board>
FIG. 4 is a schematic cross-sectional view of a circuit board according to the fourth embodiment. Here, as an example of the circuit board of the present invention, the configuration of the circuit board 5 using the power supply structure 2 described in the previous second embodiment will be described.

  That is, the circuit board 5 covers the power supply layer 11 made of, for example, copper foil, the power supply layer 13 made of the conductive fine particle dispersion film a, the interlayer insulating film 15 sandwiched therebetween, and the conductive fine particle dispersion film a. A power supply structure 2 having a four-layer structure composed of an organic insulating film 17 is provided. Here, one of the two power supply layers 11 and 13 (here, the power supply layer 11) is provided as, for example, a ground layer (hereinafter referred to as the ground layer 11).

  On top of the organic insulating film 17, a power supply wiring 31d and a ground wiring 31g as another wiring are provided. The power supply wiring 31 d is connected to the power supply layer 13 made of the conductive fine particle dispersed film a through a connection hole 17 d provided in the organic insulating film 17. This connection hole 17d is one in which the inside is embedded with a conductive material or the inner wall is made conductive by plating, and the following connection holes are the same. On the other hand, the ground wiring 31 g is connected to the ground layer 11 through a connection hole 17 g provided in the organic insulating film 17 and the interlayer insulating film 15. The connection hole 17g is disposed inside an opening 13a provided in the power supply layer 13 made of the conductive fine particle dispersed film a, and is insulated from the power supply layer 13. In addition to the power supply wiring 31d and the ground wiring 31g, another wiring 31 including a connection wiring is provided on the organic insulating film 17.

  Further, an insulating film 33 is provided on the organic insulating film 17 so as to cover these wiring 31, power supply wiring 31d, and ground wiring 31g. The material of the insulating film 33 is not limited, and an organic material or an inorganic material is used. Here, it is assumed that it is made of, for example, an organic material. On such an insulating film 33, an upper wiring 35 is provided. Some of these upper-layer wirings 35 are connected to the power supply wiring 31d, the ground wiring 31g, and further to the other wirings 31 through the connection holes 33a provided in the insulating film 33, respectively.

  A part of the upper layer wiring 35 is formed in the shape of an electrode pad for mounting an IC chip. As a result, the IC chip mounted on the upper portion of the circuit board 5 is connected to the power supply layer 13 through the power supply wiring 31d, is connected to the ground layer 11 through the ground wiring 31g, and other IC chips. Are connected to the wiring 31 connected to the upper wiring 35 connected to the external terminal.

  On the other hand, an insulating film 41 is provided on the ground layer 11. The material of the insulating film 41 is not limited, and an organic material or an inorganic material is used. Here, it is assumed that it is made of, for example, an organic material. On such an insulating film 41, a back-side ground wiring 43g and a back-side power supply wiring 43d as another wiring are provided. The back-side ground wiring 43 g is connected to the ground layer 11 through a connection hole 41 g provided in the insulating film 41. On the other hand, the back-side power supply wiring 43 d is connected to the power supply layer 13 made of the conductive fine particle dispersed film a through a connection hole 41 d provided in the insulating film 41 and the interlayer insulating film 15. The connection hole 41 d is disposed inside an opening 11 a provided in the ground layer 11, and is insulated from the ground layer 11. In addition to the above, other wirings 43 including connection wirings are provided on the insulating film 41. Some of these wirings 43 may be connected to the wiring 31 on the organic insulating film 17 through the connection holes 17 a formed in the organic insulating film 17 and the connection holes 41 a formed in the insulating film 41. In this case, the connection hole 41 a is disposed inside the opening 11 a provided in the ground layer 11, and is assumed to be insulated from the ground layer 11. In addition, the connection hole 17 a is disposed inside the opening 13 a provided in the power supply layer 13 and is insulated from the power supply layer 13.

  A part of the backside ground wiring 43g, the backside power supply wiring 43d, and the wiring 43 is formed in the shape of an electrode pad for mounting an IC chip. As a result, the IC chip mounted on the upper portion of the circuit board 5 is connected to the power supply layer 13 through the backside power supply wiring 43d, and connected to the ground layer 11 through the backside ground wiring 43g. It is configured to be connected to a wiring 43 connected to another IC chip or a wiring 43 connected to an external terminal.

  Note that a part of the back side ground wiring 43g, the back side power supply wiring 43d, and the wiring 43 may be formed in the shape of an electrode pad for mounting the circuit board 5 on another board.

  In the configuration as described above, the interlayer insulating film 15 between the ground layer 11 and the power supply layer 13 is smaller in thickness than the other insulating films 33 and 41 and has an appropriate dielectric constant according to the required performance. It is preferable to have formed.

  Further, the circuit board 5 does not need to be provided with the ground layer 11 and the power supply layer 13 over the entire surface of the interlayer insulating film 15. The ground layer 11 and the power supply layer 13 may be patterned.

  For example, another signal wiring configured using the same layer as the ground layer 11 may be provided on one surface of the interlayer insulating film 15, and the power supply layer 13 may be provided on the other surface of the interlayer insulating film 15. Other signal wirings configured using the same layer may be provided. In other words, the circuit board 5 uses, as the ground layer 11 and the power supply layer 13, a part of two wiring layers provided across the interlayer insulating film 15 having a predetermined dielectric constant among the plurality of wiring layers constituting the circuit board 5. The configuration used may be used.

  Further, the power supply structure 2 provided on the circuit board 5 has a shape in which at least the power supply layer 13 of the ground layer 11 and the power supply layer 13 is divided into a plurality of parts on the interlayer insulating film 15 according to the power supply voltage. The patterning is the same as described in the configuration of the power supply structure.

<Circuit board manufacturing method>
Next, a method for manufacturing the circuit board 5 having the above-described configuration will be described with reference to cross-sectional process diagrams in FIGS.

  First, as shown in FIG. 5A, an interlayer insulating film 15 made of an organic material is formed on a ground layer (power supply layer) 11 made of, for example, copper foil. At this time, a solution obtained by diluting or dissolving an organic material with a solvent is applied onto the ground layer 11 and then subjected to a drying treatment to obtain the interlayer insulating film 15.

  Next, as shown in FIG. 5B, a conductive fine particle dispersion film a having an opening 13 a is formed on the interlayer insulating film 15 as the power supply layer 13. At this time, using a paste in which conductive fine particles are dispersed in a solution in which an organic material is diluted, a conductive fine particle dispersed film a having a shape having an opening 13a at a required position by an inkjet method, a dispenser method, a printing method, a vapor deposition method, or the like. A pattern is formed. In diluting the organic material constituting the paste, it is preferable to use the same solvent as the diluted organic material constituting the interlayer insulating film 15. Thereafter, the applied film is dried to obtain the power supply layer 13 made of the conductive fine particle dispersed film a.

  Next, as shown in FIG. 5C, an organic insulating film 17 is formed on the power supply layer 13 made of the conductive fine particle dispersed film a. At this time, the organic insulating film 17 is obtained by applying a solution obtained by diluting or dissolving the organic material onto the conductive fine particle dispersed film a and then performing a drying process. For diluting or dissolving the organic material, it is preferable to use the same solvent as the organic material constituting the conductive fine particle dispersion film a and the interlayer insulating film 15 diluted or dissolved.

  Thereafter, as shown in FIG. 5D, a step of curing or drying the organic material of the conductive fine particle dispersion film a constituting the power supply layer 13 is performed. In this step, the interlayer insulating film 15 and the organic insulating film 17 are simultaneously cured or dried. Here, the organic material is cured without deforming the conductive fine particles in the conductive fine particle dispersion film a, and the dispersion state of the conductive fine particles in the film is determined in the same manner as described in the method for manufacturing the power supply structure. It is important to keep. Therefore, here, the heat treatment is performed at a temperature lower than the melting point of the conductive fine particles in the conductive fine particle dispersed film a.

  Next, as shown in FIG. 5E, an opening 11a is formed in the ground layer 11 made of copper foil. Here, the opening 11a is formed at a required position by cutting using a drill or laser processing. The opening 11a may be formed by applying a lithography method to form a resist pattern and etching the copper foil using the resist pattern as a mask.

  Thereafter, as shown in FIG. 5F, an insulating film 41 is formed so as to cover the ground layer 11. The insulating film 41 is configured using, for example, an organic material or an inorganic material. Such an insulating film 41 is formed by coating film formation, laminating, or laminating press.

  Next, as shown in FIG. 5G, each connection hole is formed in the organic insulating film 17 and the interlayer insulating film 15. These connection holes include a connection hole 17d reaching the power supply layer 13 made of the conductive fine particle dispersion film a, a connection hole 17g reaching the ground layer 11 in the opening 13a provided in the power supply layer 13, and an opening provided in the power supply layer 13. The connection hole 17a reaches a position corresponding to the opening 11a provided in the ground layer 11 in 13a.

  Further, each connection hole is formed in the insulating film 41 and the interlayer insulating film 15. These connection holes include a connection hole 41g reaching the ground layer 11, a connection hole 41d reaching the power supply layer 13 made of the conductive fine particle dispersion film a in the opening 11a provided in the ground layer 11, and an opening 11a provided in the ground layer 11. The connection hole 41a communicates with the connection hole 17a.

  Each of the above connection holes is formed by cutting using a drill or laser processing.

  Thereafter, as shown in FIG. 6A, a conductive material is embedded in each of the connection holes described above by a plating method or by a filling printing method. When the hole filling printing method is applied, the ink paste of the conductive material adhering to the organic insulating film 17 and the insulating film 41 is removed by, for example, scraping with a squeegee or laminating and peeling an adhesive film. . Next, a power supply wiring 31 d connected to the power supply layer 13, a ground wiring 31 g connected to the ground layer 11, and other wirings 31 are formed on the organic insulating film 17. On the insulating film 41, a power supply wiring 43d connected to the power supply layer 13, a ground wiring 43g connected to the ground layer 11, and other wirings 43 are formed. These wirings are formed by, for example, bonding a copper foil on the organic insulating film 17 and the insulating film 41 and then patterning the copper foil. The patterning of the copper foil is performed by cutting using a drill or laser processing. In addition, each wiring may be formed by applying a lithography method to form a resist pattern and etching the copper foil using the resist pattern as a mask.

  Next, as shown in FIG. 6B, an insulating film 33 is formed on the organic insulating film 17. The insulating film 33 is configured using, for example, an organic material or an inorganic material. Such an insulating film 33 is formed by coating film formation, laminating, or laminating press. Next, each connection hole 33 a reaching the power supply wiring 31 d, the ground wiring 31 g, and the other wiring 31 is formed in the insulating film 33. The connection hole 33a is formed by, for example, cutting using a drill or laser processing.

  Next, as shown in FIG. 6C, the conductive material is embedded in each of the connection holes 33a described above by a plating method or a hole-filling printing method. When the hole-filling printing method is applied, the ink paste of the conductive material adhering to the insulating film 33 is removed by, for example, scraping using a squeegee or laminating and peeling an adhesive film. Next, an upper layer wiring 35 is formed on the insulating film 33. A part of each upper layer wiring 35 is connected to the power supply wiring 31d, the ground wiring 31g, and the other wiring 31 through the connection hole 33a. Each of the upper layer wirings 35 is formed in the same manner as the previous wiring forming method, for example, by bonding a copper foil on the insulating film 33 and then patterning the copper foil.

  Thereafter, as shown in FIG. 6D, a process of curing the insulating films 33 and 41 is performed as necessary. Here, when at least one of the insulating films 33 and 41 is made of an organic material, a step of curing the insulating films 33 and 41 made of an organic material is performed as necessary. At this time, the organic material is cured without deforming the conductive fine particles in the conductive fine particle dispersed film a, and the dispersed state of the conductive fine particles in the film is determined in the same manner as described in the method for manufacturing the power supply structure. It is important to keep. Therefore, here, the heat treatment is performed at a temperature lower than the melting point of the conductive fine particles in the conductive fine particle dispersed film a. If the insulating films 33 and 41 are made of an inorganic material, this step is not necessary.

  The circuit board 5 obtained as described above has conductive fine particles in which one of the two power supply layers 11 and 13 built in the entire surface of the substrate is dispersed with conductive fine particles in an organic material. It is composed of a dispersion film a. Thus, as described above, the progression of electromagnetic energy in all frequency bands caused by changing current and voltage is complicated by countless contacts and non-contacts between the conductive fine particles dispersed in the conductive fine particle dispersion film a. Will cause a time delay. Therefore, by configuring the electronic device using the circuit board 5 of the fourth embodiment, resonance of electromagnetic energy between the ground layer 11 and the power supply layer 13 can be performed in a wide frequency band without providing a decoupling capacitor on the board. It becomes possible to suppress with. As a result, it is possible to prevent electromagnetic radiation caused by driving the IC chip mounted on the circuit board 5 and to drive the semiconductor integrated circuit on the IC chip with a stable power supply voltage.

  As a result, by using this circuit board 5, it is possible to achieve high speed as well as high integration and miniaturization of electronic equipment.

  In the above-described fourth embodiment, the configuration of the circuit board 5 using the power supply structure 2 described in the previous second embodiment has been described as an example. However, the circuit board of the present invention is not limited to this, and can be applied to the configuration including the power supply structure according to the first to third embodiments.

Example 1
<Layer structure of power supply structure>
A power supply structure (S11 to S19) to which the configuration of the present invention is applied and a conventional power supply structure (C1, C2) are manufactured with the layer configuration described with reference to FIG. 7A is a plan view of the manufactured power supply structure, FIG. 7B is a cross-sectional view of the power supply structure of samples S11 to S19, and FIG. 7C is a cross-sectional view of the power supply structure of samples C1 and C2. 7B and 7C correspond to the AA cross section of FIG. 7A.

  The power supply structures of the samples S11 to S19, C1, and C2 shown in FIGS. 7A to 7C have a configuration in which the interlayer insulating film 15 is sandwiched between the ground layer 11 and the power supply layer 13, and the insulating film 41 and the organic insulating film 17 further. It is a covered five-layer structure. In these power supply structures, two openings 41 c are provided in the insulating film 41 covering the top of the ground layer 11. The portion of the ground layer 11 exposed at the bottom of the opening 41c is used as the ground terminal G. Further, a part of the ground layer 11 exposed at the bottom of the opening 41 c is patterned into an independent island shape as a power supply terminal S for taking out the power supply layer 13. The power supply terminal S is connected to the power supply layer 13 by a connection portion 51 formed in the interlayer insulating film 15.

  In the configuration as described above, the power supply structures of the samples S11 to S19 shown in FIG. 7B use the conductive fine particle dispersion film a containing Ag particles as the power supply layer 13. On the other hand, the power supply structures of the samples C1 and C2 shown in FIG. 7C use Cu foil as the power supply layer 13, and are different from the samples S11 to S19 in this respect.

The configuration of each layer in the power supply structure of Example 1 is as shown in Table 1 below.

<Method for manufacturing power supply structure>
Next, the manufacturing procedure of each power supply structure will be described with reference to Table 1 above.

First, a solvent-soluble polyamideimide (PAI) using N-methyl-2-pyrrolidone as a solvent is applied to the surface of the ground layer 11 made of Cu foil, and this is dried to insulate the PAI (1). A film 41 is formed. At this time, in the samples S12 and C2, the high dielectric constant material barium titanate (BaTiO ₃ ) is dispersed and applied to the PAI (1) used in the sample S11 and the like. An insulating film 41 made of PAI (1) having a dielectric constant is formed. The thickness of the insulating film 41 is about 10 to 15 μm. The dielectric constant of the insulating film 41 after completion of curing or drying is 2.9 for PAI (1) and 30.0 for PAI (1) having a high dielectric constant in which barium titanate (BaTiO ₃ ) is dispersed.

  Further, a solvent-soluble polyamideimide (PAI) using N-methyl-2-pyrrolidone as a solvent was applied to the back surface of the ground layer 11 made of Cu foil in the same manner as the insulating film 41 in each sample. An interlayer insulating film 15 made of PAI (1) is formed by drying. The film thickness of the interlayer insulating film 15 is 30 to 40 μm. However, in sample S16, solvent-soluble polyamideimide PAI (2) having a different molecular structure using N-methyl-2-pyrrolidone as a solvent is used, and in sample S17, a polyimide (PI) film having a film thickness of 25 μm and a Cu foil are used. A copper-clad laminate laminated with the above was used.

  Next, a connection hole is formed in the interlayer insulating film 15 and a connection portion 51 is formed therein.

  Next, the power supply layer 13 is formed on the interlayer insulating film 15. In samples S11 to S19, the power supply layer 13 made of the conductive fine particle dispersion film a is formed by applying a conductive fine particle dispersion paste and drying the paste. At this time, as shown in Table 1 above, in samples S11 to S19, a) the shape and material of the conductive fine particles in the conductive fine particle dispersion film a, and b) the film of the power supply layer 13 made of the conductive fine particle dispersion film a. Thickness and c) Solvent of conductive fine particle dispersed paste are set to each.

That is, a) The shape and material of the conductive fine particles in the conductive fine particle dispersion film a are spherical Ag (average particle diameter 3 μm, content 85% by weight) in Sample S18, and spherical Ni (average particle diameter 2 μm, in Sample S19). The content is 85% by weight, and the other sample S11 is flaky Ag (average particle size: 7 μm, content: 85% by weight).
b) The film thickness of the power supply layer 13 made of the conductive fine particle dispersion film a is 3 to 9 μm in the sample S13, 65 to 75 μm in the sample S14, and 10 to 15 μm in the other samples S11 and others.
c) As a solvent for the conductive fine particle-dispersed paste, γ-butyrolactone is used for sample S15, and N-methyl-2-pyrrolidone similar to PAI (1) constituting insulating film 41 is used for other samples S11 and the like.

  On the other hand, in samples C1 and C2, a power supply layer 13 is formed by bonding a copper (Cu) foil (film thickness: 18 μm) on the interlayer insulating film 15 by thermocompression bonding.

  Thereafter, a solvent-soluble polyamideimide (PAI) using N-methyl-2-pyrrolidone as a solvent is applied to the upper portion of the power supply layer 13 in the same manner as the insulating film 41 in each sample, and this is dried and PAI is applied. An organic insulating film 17 made of (1) is formed. The film thickness of the organic insulating film 17 is about 10 to 15 μm. However, in the sample S18, the formation of the organic insulating film 17 is omitted.

  After the above, an opening 41c is formed in the insulating film 41, and the ground layer 11 exposed at the bottom is patterned. Thus, the ground terminal G in which the ground layer 11 is partially exposed at the bottom of the opening 41c, and the power supply terminal S in which the ground layer 11 is separated into an island shape and connected to the power supply layer 13 through the connection portion 51. To obtain each power supply structure.

<Evaluation of Example 1>
About each power supply structure of Example 1 as described above, self-impedance Z11 is measured when a voltage is applied in a frequency band of 300 kHz to 20 GHz (3 × 10 ⁵ Hz to 2 × 10 ¹⁰ Hz). For these measurements, a vector network analyzer N5230A manufactured by Agilent Technologies is used as the measuring device 53, and a High Frequency Type GSG probe manufactured by Cascade Microtech is used as a contact point with the measurement terminal. Calibration before measurement was performed by the SOLT method. 8 to 12 show the measurement results of the self-impedance Z11 measured for each power supply structure.

[Dielectric constant of interlayer insulating film 15]
FIG. 8 shows measurement results of samples S11, S12, C1, and C2 having different dielectric constants of the interlayer insulating film 15. As shown in this result, the samples S11 and S12 using the power supply layer 13 made of the conductive fine particle dispersion film a are 200 MHz (2 compared to the samples C1 and C2 not using the conductive fine particle dispersion film a. The value of the self-impedance Z11 in a high frequency band of × 10 ⁸ Hz) or higher indicates a low value. For example, the frequency at which the impedance reaches 1Ω (10 ⁰ Ω) at 200 MHz (2 × 10 ⁸ Hz) or higher is approximately 1.25 GHz (1.25 × 10 ⁹ Hz) in the samples C1 and C2, and the sample S11, It can be seen that in S12, the value of the self-impedance Z11 is kept at a low value in the vicinity of 2.5 GHz (2.5 × 10 ⁹ Hz) and in a wider range.

  From the above, according to the power supply structure of the present invention using the conductive fine particle dispersion film a, it is confirmed that the resonance of electromagnetic energy between the power supply layers in the high frequency band can be suppressed without using a decoupling capacitor. It was. In addition, it was confirmed that, by using the power supply structure of the present invention, it is possible to achieve high speed as well as high integration and miniaturization of electronic equipment.

Further, as the insulating film 41, the interlayer insulating film 15, and the organic insulating film 17, a sample S11 using PAI (1) and a sample using PAI (1) having a high dielectric constant containing a high dielectric constant material. In comparison with S12, in the wave number band lower than 200 MHz (2 × 10 ⁸ Hz), the sample S12 using the high dielectric constant PAI (1) is more specific than the sample S11 using the low dielectric constant PAI (1). The value of the self impedance Z11 is lower than that. In contrast, in a high frequency band of 200 MHz (2 × 10 ⁸ Hz) or higher, the sample S11 using the low dielectric constant PAI (1) is the sample using the high dielectric constant PAI (1). The value of the self-impedance Z11 is lower than S12.

  As described above, in the power supply structure of the present invention, by using a low dielectric constant material as an insulating film disposed around the ground layer 11 and the power supply layer 13, resonance of electromagnetic energy between the power supply layers is suppressed in a high frequency band. It is thought that the effect can be obtained higher.

[Film thickness of conductive fine particle dispersion film a]
FIG. 9 shows the measurement results of the samples S11, S13, and S14 having different thicknesses of the power supply layer 13 made of the conductive fine particle dispersion film a together with the measurement results of the sample C1 for comparison. As shown in this result, compared with the sample C1 that does not use the conductive fine particle dispersion film a, the sample S11 in which the power supply layer 13 made of the conductive fine particle dispersion film a has a thickness of 10 to 15 μm is 200 MHz ( The value of the self-impedance Z11 in a high frequency band of 2 × 10 ⁸ Hz or higher indicates a low value.

The sample S13 having the thinnest power supply layer 13 made of the conductive fine particle dispersed film a has a self-impedance Z11 value of 2 GHz (2 × 10 ⁹ Hz) or higher and a low value. The value in the frequency band is high. This is presumably because the volume resistivity of sample S13 increased due to the thin film thickness of power supply layer 13. Further, even in the sample S14 having the largest film thickness of the power supply layer 13 made of the conductive fine particle dispersed film a, the self impedance Z11 shows a low value at 2 GHz (2 × 10 ⁹ Hz) or more, but overall The value in a certain frequency band is high.

  From the above, in the configuration of the present invention using the power supply layer 13 made of the conductive fine particle dispersion film a, the electromagnetic energy between the power supply layers in the high frequency band is adjusted by appropriately adjusting the film thickness of the conductive fine particle dispersion film a. It was confirmed that the effect of suppressing the resonance can be obtained more reliably.

[Solvent of conductive fine particle dispersion film a]
FIG. 10 shows the measurement results of samples S11 and S15 with different solvents of the conductive fine particle dispersion paste used when forming the conductive fine particle dispersion film a together with the measurement results of the sample C1 for comparison. As shown in this result, the sample S11 in which the conductive fine particle dispersion film a is formed using the same solvent as the interlayer insulating film 15 and the organic insulating film 17 is more self-stressing than the sample S15 using a different solvent. The value of impedance Z11 shows a low value. Even in the sample S15 using a different solvent, the value of the self-impedance Z11 in the high frequency band of 1 GHz (10 ⁹ Hz) or higher is low in comparison with the sample C1 not using the conductive fine particle dispersion film a. The value is shown.

  As described above, in the configuration of the present invention using the power supply layer 13 made of the conductive fine particle dispersion film a, the interlayer insulating film is made of an organic material that can be diluted in the same solvent as the organic material constituting the conductive fine particle dispersion film a. It was confirmed that the effect of suppressing the resonance of the electromagnetic energy between the power supply layers in the high frequency band can be more reliably obtained by forming 15 and the organic insulating film 17.

[Material of Interlayer Insulating Film 15]
FIG. 11 shows the measurement results of the samples S11, S16, and S17 having different materials for the interlayer insulating film 15 together with the measurement results of the sample C1 for comparison. As shown in this result, the sample S11 in which the interlayer insulating film 15 is formed using the same solvent as the conductive fine particle dispersed film a has a self impedance Z11 value higher than that of the sample S16 using a different solvent. It shows a low value. Even in the sample S17 using a film as the interlayer insulating film 15, in comparison with the sample C1 that does not use the conductive fine particle dispersion film a, the self in a high frequency band of 200 MHz (2 × 10 ⁸ Hz) or higher. The value of impedance Z11 shows a low value.

  From the above, in the configuration of the present invention using the power supply layer 13 composed of the conductive fine particle dispersed film a, the interlayer insulating film 15 and the conductive fine particle dispersed film a are formed by using the same solvent, so By forming the interlayer insulating film 15 using an organic material that can be diluted in the same solvent as the organic material constituting the conductive fine particle dispersion film a, the effect of suppressing the resonance of electromagnetic energy between the power supply layers in the high frequency band is further improved. It was confirmed that it was possible to obtain with certainty.

  At the same time, it was confirmed that even when the film can be easily formed by using a film as the interlayer insulating film 15, the effect of suppressing the resonance of electromagnetic energy between the power supply layers in the high frequency band can be obtained.

[Shape and Material of Fine Particles in Conductive Fine Particle Dispersion Film a]
FIG. 12 shows the measurement results of the samples S11, S18, and S19 having different shapes and materials of the fine particles in the conductive fine particle dispersion film a together with the measurement results of the sample C1 for comparison. As shown in this result, the sample S18 using spherical Ag particles and the sample S19 using spherical nickel (Ni) particles have higher self impedance Z11 than the sample S11 using flaky Ag particles. The value is shown.

  From the above, in the configuration of the present invention using the power supply layer 13 composed of the conductive fine particle dispersion film a, the shape of the fine particles contained in the conductive fine particle dispersion film a is made into a flake shape, so that It was confirmed that the effect of suppressing resonance of electromagnetic energy between the power supply layers can be obtained more reliably. However, even when spherical fine particles are used, the measurement result can be improved by adjusting the conduction state between the fine particles according to the fine particle content in the fine particle dispersion film a.

<< Example 2 >>
<Configuration of circuit board>
With the layer configuration shown in FIG. 13, a circuit board (samples S21 to S24) to which the configuration of the present invention is applied and a circuit board (sample C3) having a conventional configuration are manufactured. These circuit boards are circuit boards on which two chips of a logic IC chip and a memory IC chip are mounted. The logic IC chip has a drive voltage of 3.3 V, a drive frequency of 400 MHz, and an output frequency. Driven at 20 MHz.

  13A is a cross-sectional view illustrating the layer structure of the circuit boards of samples S21 and S22, FIG. 13B is a cross-sectional view illustrating the layer structure of the circuit boards of samples S23 and S24, and FIG. 13C is the layer structure of sample C3. FIG. Table 2 below shows a characteristic configuration of each circuit board of Example 2. Hereinafter, the layer configuration of each circuit board of Example 2 will be described with reference to Table 2 below.

<Layer structure of samples S21 and S22>
The circuit boards of the samples S21 and S22 shown in FIG. 13A have six conductive layers from the first conductive layer L1 to the sixth conductive layer L6. Among these, the 2nd conductive layer L2 is comprised with Cu foil (18 micrometers thickness), and is used as a ground layer (GND). The third conductive layer L3 is composed of a conductive fine particle dispersion film a (film thickness 10 to 15 μm) and is used as a power supply layer (VCC). This conductive fine particle dispersion film a is a layer formed by coating using an Ag paste (solvent: N-methyl-2-pyrrolidone) containing flaky Ag particles, and the average particle diameter of Ag particles is 7 μm. The content is 85% by weight. Other than this, the first conductive layer L1 and the sixth conductive layer L6 are made of Cu foil (70 μm thickness), and the fourth conductive layer L4 and the fifth conductive layer L5 are made of Cu foil (35 μm thickness).

Between the first conductive layer L1 to the sixth conductive layer L6, there are six insulating layers from the first insulating layer R1 to the sixth insulating layer R6. Among these, the second insulating layer R2 and the third insulating layer R3 disposed with the conductive fine particle dispersion film a of the third conductive layer L3 interposed therebetween are solvent-soluble types using N-methyl-2-pyrrolidone as a solvent. Polyamideimide (PAI) is applied and dried to form an organic insulating film made of PAI (1). However, the second dielectric layer R2 of the sample S22 has a high dielectric constant obtained by dispersing and applying a powder of barium titanate (BaTiO ₃ ), which is a high dielectric constant material, to the PAI (1) resin. Rate PAI (1) is used. The dielectric constant after completion of curing or drying is 2.9 for PAI (1) and 30.0 for PAI (1) having a high dielectric constant in which barium titanate (BaTiO ₃ ) is dispersed.

  Other than this, the first insulating layer R1 and the fourth insulating layer R4 to the sixth insulating layer R6 are made of glass cloth base epoxy resin (heat resistance grade FR-4). Note that two layers of the third insulating layer R3 and the fourth insulating layer R4 are disposed between the third conductive layer L3 formed of the conductive fine particle dispersion film a and the fourth conductive layer L4. The film thicknesses of the first insulating layer R1 to the sixth insulating layer R6 are as illustrated.

  In the layer configuration as described above, the first conductive layer L1 and the sixth conductive layer L6 are patterned as signal wirings. On the other hand, the second conductive layer L <b> 2 to the fifth conductive layer L <b> 5 are arranged in a solid film shape on the entire surface and are provided with only through holes for connection. In addition, the first insulating layer R1 to the sixth insulating layer R6 are provided with connection holes and connection portions for connecting the upper and lower conductive layers.

  Further, the first conductive layer L1 includes a ground terminal connected to the second conductive layer L2 at the mounting position of the logic IC chip mounted on the circuit board and the mounting position of the memory IC chip, respectively. , A power supply terminal connected to the third conductive layer L3, and a signal terminal are provided.

<Layer structure of samples S23 and S24>
The circuit boards of the samples S23 and S24 shown in FIG. 13B are different from the circuit boards of the samples S21 and S22 shown in FIG. 13A, as shown in the figure, the film thickness of the first insulating layer R1 is 300 μm, and the sixth insulating layer R6. The film thickness is changed to 100 μm, and the other configurations are the same.

<Layer configuration of sample C3>
The circuit board of the sample C3 illustrated in FIG. 13C includes four conductive layers from the first conductive layer L1 to the fourth conductive layer L4. These four conductive layers are composed of a first conductive layer L1 and a fourth conductive layer L4 made of Cu foil (70 μm thickness), and a second conductive layer L2 and a third conductive layer L3 made of Cu foil (35 μm thickness). ing. Among these, the second conductive layer L2 is used as a ground layer (GND), and the third conductive layer L3 is used as a power supply layer (VCC).

  Between the first conductive layer L1 to the fourth conductive layer L4, there are three insulating layers from the first insulating layer R1 to the third insulating layer R3. The first insulating layer R1 to the third insulating layer R3 are made of glass cloth base epoxy resin (heat resistance grade FR-4). The film thicknesses of the first insulating layer R1 to the third insulating layer R3 are as illustrated.

  In the layer configuration as described above, the first conductive layer L1 and the fourth conductive layer L4 are patterned as signal wirings. On the other hand, the second conductive layer L2 and the third conductive layer L3 are arranged in the form of a solid film on the entire surface and are provided with only through holes for connection. Further, the first insulating layer R1 to the third insulating layer R3 are provided with connection holes and connection portions for connecting the upper and lower conductive layers.

  Further, the first conductive layer L1 includes a ground terminal connected to the second conductive layer L2 at the mounting position of the logic IC chip mounted on the circuit board and the mounting position of the memory IC chip, respectively. , A power supply terminal connected to the third conductive layer L3, and a signal terminal are provided.

<Evaluation-1 of Example 2>
About each circuit board of Example 2 as described above, self-impedance Z11 and mutual impedance Z21 are measured when a voltage is applied in a frequency band of 300 kHz to 20 GHz (3 × 10 ⁵ Hz to 2 × 10 ¹⁰ Hz). . For these measurements, a vector network analyzer N5230A manufactured by Agilent Technologies is used as a measuring device, and a High Frequency Type GSG probe manufactured by Cascade Microtech Co. is used as a contact point with the measurement terminal. Calibration before measurement was performed by the SOLT method.

  FIG. 14 shows the measurement result of the self-impedance Z11. As shown in this result, the circuit boards of samples S21 to S24 using the conductive fine particle dispersion film a as the conductive layer (VCC) have a wider frequency than the sample C3 not using the conductive fine particle dispersion film a. The value of the self impedance Z11 is low in the band. As a result, it was confirmed that by using the power supply structure of the present invention, fluctuations in the power supply voltage can be suppressed to be small in a wide frequency band, and a stable power supply voltage can be supplied to the IC chip.

In particular, in the circuit boards of Samples S21 to S24 using the conductive fine particle dispersion film a as the conductive layer (VCC), 300 MHz (3 × 10 ⁸ Hz) as compared with the sample C3 not using the conductive fine particle dispersion film a. ) In the wide high frequency band described above, the value of the self-impedance Z11 shows a lower value.

  Accordingly, it was confirmed that the resonance of electromagnetic energy between the power supply layers in the high frequency band can be suppressed without using a decoupling capacitor by using the circuit board of the present invention. In addition, it was confirmed that, by using the power supply structure of the present invention, it is possible to achieve high speed as well as high integration and miniaturization of electronic equipment.

Of the samples S21 to S24 using the conductive fine particle dispersion film a as the conductive layer (VCC), the second dielectric layer R2 and the third insulation layer R3 sandwiching the fine particle dispersion film a are used as the high dielectric constant PAI ( Samples S22 and S24 using 1) have a lower value of self-impedance Z11 in a frequency band lower than 30 MHz (3 × 10 ⁷ Hz) compared to samples S21 and S23 using low dielectric constant material PAI. .

  From this result, in the power supply structure of the present invention, by using a high dielectric constant material as the organic insulating film sandwiching the conductive fine particle dispersion film a, the effect of suppressing the resonance of electromagnetic energy between the power supply layers in the low frequency band. Is considered higher.

  FIG. 15 shows the measurement result of the mutual impedance Z21. As shown in this result, the circuit boards of samples S21 to S24 using the conductive fine particle dispersion film a as the conductive layer (VCC) have a wider frequency than the sample C3 not using the conductive fine particle dispersion film a. The value of the mutual impedance Z21 is low in the band. Thus, it was confirmed that by using the power supply structure of the present invention, the fluctuation of the power supply voltage can be suppressed to be small in a wide frequency band and the generation of noise due to electromagnetic radiation can be prevented.

<Evaluation-2 of Example-2>
About each circuit board of sample S21, S22, C3 of Example 2, the electromagnetic radiation noise in the case of applying a voltage in a frequency band of 30 MHz-1 GHz (3 * 10 < ⁷ > Hz-10 < ⁹ > Hz) is measured. This measurement was based on the VCCI standard, and the radiated electric field strength in both the horizontal and vertical directions was measured in a anechoic chamber using the 3-meter method.

  FIG. 16 shows the measurement result of radiation noise. FIG. 16A (h) shows data in the horizontal direction of the sample S21, and FIG. 16A (v) shows data in the vertical direction of the sample S21. FIG. 16B (h) is data in the horizontal direction of the sample S22, and FIG. 16B (v) is data in the vertical direction of the sample S22. FIG. 16C (h) shows horizontal data in the sample C3, and FIG. 16C (v) shows vertical data in the sample C3. In these drawings, the standard value of radiation noise (VCCI class b) is indicated by a solid line, and the margin (6 dB) for this value is indicated by a broken line.

  As shown in these results, in the samples S21 and S22 using the conductive fine particle dispersion film a as the conductive layer (VCC), the value of the radiation noise is the standard value (VCCI class b) in both the horizontal direction and the vertical direction. Never exceed. On the other hand, in the sample C3 not using the conductive fine particle dispersion film a, the value of the radiation noise exceeds the standard value (VCCI class b) in the high frequency band exceeding 500 MHz.

  Also from this result, it was confirmed that the resonance of electromagnetic energy between the power supply layers in the high frequency band can be suppressed in the circuit board of the present invention using the conductive fine particle dispersion film a for the conductive layer (VCC). In addition, it was confirmed that, by using the power supply structure of the present invention, it is possible to achieve high speed as well as high integration and miniaturization of electronic equipment.

Example 3
<Configuration of circuit board>
In the configuration shown in FIG. 17, a circuit board to which the configuration of the present invention is applied and a circuit substrate having a conventional configuration are manufactured. These circuit boards are equipped with a total of six IC chips including a high-speed IC chip 61 having a driving voltage of 1.8 V and an operating speed of 6 Gbps, and an IC chip 63 for distributing the other five signals, and 32 output terminals. 65. From the input terminal to the IC chip 63 and from the high-speed IC chip 61 to the output terminal, all wirings are designed to be connected with the same length between the IC chips. Therefore, there is no signal delay due to the difference in wiring length, and all 32 output terminals operate simultaneously.

  18A is a cross-sectional view illustrating the layer structure of the circuit board of sample S31, and FIG. 18B is a cross-sectional view illustrating the layer structure of the circuit board of sample C4. Hereinafter, the layer configuration of each circuit board of Example 3 will be described.

<Layer configuration of sample S31>
The circuit board of the sample S31 shown in FIG. 18A has five conductive layers from the first conductive layer L1 to the fifth conductive layer L5. Among these, the 2nd conductive layer L2 is comprised with Cu foil (18 micrometers thickness), and is used as a power supply layer (VDD). The third conductive layer L3 is composed of a conductive fine particle dispersed film a (film thickness 10 to 15 μm) and is used as a ground layer (GND). The fine particle dispersion film a is a layer formed by coating using an Ag paste (solvent: N-methyl-2-pyrrolidone) containing flaky Ag particles, and has an average particle diameter of 7 μm and a content of Ag particles. 85% by weight. Other than this, the first conductive layer L1, the fourth conductive layer L4, and the fifth conductive layer L5 are made of Cu foil (18 μm thick).

  Between the first conductive layer L1 to the fifth conductive layer L5, there are five insulating layers from the first insulating layer R1 to the fifth insulating layer R5. Among these, the second insulating layer R2 and the third insulating layer R3 disposed with the conductive fine particle dispersion film a of the third conductive layer L3 interposed therebetween are solvent-soluble types using N-methyl-2-pyrrolidone as a solvent. Polyamideimide (PAI) is applied and dried to form an organic insulating film made of PAI (1). The relative dielectric constant of PAI (1) after completion of curing or drying is 2.9. The first conductive layer L1 and the fifth conductive layer L5 are covered with a solder resist layer SR.

  The other first insulating layer R1, fourth insulating layer R4, and fifth insulating layer R5 are made of a glass cloth base epoxy resin (heat resistance grade FR-4). Note that two layers of the third insulating layer R3 and the fourth insulating layer R4 are disposed between the third conductive layer L3 formed of the conductive fine particle dispersion film a and the fourth conductive layer L4. The film thicknesses of the first insulating layer R1 to the fifth insulating layer R5 are as illustrated.

  In the layer configuration as described above, of the first conductive layer L1 to the fifth conductive layer L5, the third conductive layer L3 made of the conductive fine particle dispersed film a is arranged in a solid film shape on the entire surface, and is connected to a through-hole. In addition, only the opening is provided, and the other layers are patterned as signal wiring. However, in the second conductive layer L2 used as the power supply layer (VDD), three power supply layers for applying different power supply voltages VDD are patterned. These power supply layers are formed to be sufficiently wider than other signal wirings.

  In addition, the first insulating layer R1 to the fifth insulating layer R5 are provided with connection holes and connection portions for connecting the upper and lower conductive layers.

  Furthermore, the first conductive layer L1 has a power terminal connected to the second conductive layer L2, a ground terminal connected to the third conductive layer L3, and a mounting position of an IC chip mounted on the circuit board, and A signal terminal is provided.

<Layer configuration of sample C4>
The circuit board of the sample C4 shown in FIG. 18B is different from the circuit board of the sample S31 shown in FIG. 18A. As shown in the figure, the third conductive layer L3 is a Cu foil (18 μm thick), and the insulating layer is the first insulating layer. The four-layer structure of the layers R1 to R4 is all made of glass cloth base epoxy resin (heat resistant grade FR-4), and the other structures are the same.

<Evaluation-1 of Example 3>
For each circuit board of Example 3 as described above, power supply voltage fluctuation is measured when operated at 3 Gbps. For this measurement, an Anritsu pulse pattern generator MP1761B as a signal input device, an Agilent Technology digital oscilloscope 86100C as an output signal and power supply voltage measurement device, and a probe E2675A made by Agilent Technology at the contact with the substrate terminal or E2677A was used. FIG. 19 shows the measurement result of the change with time of the power supply voltage at the terminal closest to the power input portion of the high-speed IC chip. FIG. 19A shows data of sample S31, and FIG. 19B shows data of sample C4.

  As shown in these results, the fluctuation of the power supply voltage of the sample S31 using the conductive fine particle dispersion film a was −10.6% to + 7%, whereas the conductive fine particle dispersion film a was used. The fluctuation of the power supply voltage of the sample C4 that is not present is −14.1% to 14.3%.

  From this result, in the circuit board of the present invention using the conductive fine particle dispersed film a, the resonance of the electromagnetic energy between the power supply layers in the high frequency band is suppressed, so that the power supply voltage is stabilized in the high speed operation region. Was confirmed. In addition, it was confirmed that, by using the power supply structure of the present invention, it is possible to achieve high speed as well as high integration and miniaturization of electronic equipment.

<Evaluation of Example 3-2>
For each circuit board of Example 3 as described above, the signal rise time when operating at 50 MHz is measured. In this measurement, an Anritsu pulse pattern generator MP1761B is used as a signal input device, an Agilent Technology digital oscilloscope 86100C is used as an output signal and power supply voltage measurement device, and a probe E2675A or E2677A manufactured by Agilent Technology is used as a contact point with the substrate terminal. Was used. FIG. 20 shows the measurement results. FIG. 20A shows data of sample S31, and FIG. 20B shows data of sample C4.

  As shown in these results, the signal rise time of the sample S31 using the conductive fine particle dispersion film a was Rise Time = 77 [ps], whereas the conductive fine particle dispersion film a was not used. The rise time of the sample C4 is Rise Time = 91 [ps].

  From this result, it was confirmed that in the circuit board of the present invention using the conductive fine particle dispersion film a, the operation speed was increased in the high-speed frequency band.

  DESCRIPTION OF SYMBOLS 1, 2, 3 ... Power supply structure, 5 ... Circuit board, 11 ... Power supply layer (ground layer), 11 '... Power supply layer, 13 ... Power supply layer, 15 ... Interlayer insulating film, 13a, 15a ... Opening, 17, 19 ... Organic insulating film, 31d ... Power supply wiring (wiring), 31g ... Ground wiring (other wiring), 33d, 33g ... Connection hole, 41 ... Insulating film, 43d ... Back side power supply wiring (other wiring), 43g ... Backside Side ground wiring (wiring), a ... conductive fine particle dispersed film

Claims (17)

An interlayer insulating film;
A circuit board provided with two power supply layers provided with a conductive fine particle dispersed film in which conductive fine particles are dispersed in an organic material, provided in a state of sandwiching the interlayer insulating film. The circuit board according to claim 1, wherein the conductive fine particles are configured using gold, silver, copper, aluminum, nickel, or graphite. The circuit board according to claim 1, wherein the interlayer insulating film is configured using an organic material that can be diluted or dissolved in the same solvent as the organic material that forms the conductive fine particle dispersion film. The electroconductive fine particle dispersion film is sandwiched between organic insulating films made of an organic material that can be diluted or dissolved in the same solvent as the organic material constituting the fine particle dispersion film. A circuit board according to the above. An insulating film covering at least one of the power supply layers;
Wiring provided on the insulating film,
The circuit board according to claim 1, wherein the wiring is connected to one of the power supply layers through a connection hole provided in the insulating film. The insulating film is disposed between the conductive fine particle dispersion film and the wiring, and is configured using an organic material that can be diluted or dissolved in the same solvent as the organic material that constitutes the conductive fine particle dispersion film. The circuit board according to claim 5. On the insulating film, another wiring insulated from the wiring is provided,
The other wiring is
The power supply layer through an opening provided in the power supply layer to which the wiring is connected in the power supply layer, and a connection hole formed in the insulating film and in the interlayer insulating film in a state located inside the opening The circuit board according to claim 5, wherein the circuit board is connected to the other power supply layer. An interlayer insulating film;
A power supply structure provided with two interlayer power supply layers provided with a conductive fine particle dispersed film in which conductive fine particles are dispersed in an organic material, provided so as to sandwich the interlayer insulating film. The power supply structure according to claim 8, wherein the conductive fine particles are configured using gold, silver, copper, aluminum, nickel, or graphite. The power supply structure according to claim 8 or 9, wherein the interlayer insulating film is configured using an organic material that can be diluted or dissolved in the same solvent as the organic material that forms the conductive fine particle dispersion film. The conductive fine particle dispersion film is sandwiched between organic insulating films made of an organic material that can be diluted or dissolved in the same solvent as the organic material that forms the conductive fine particle dispersion film. The power supply structure according to any one of the above. A method of manufacturing a circuit board comprising two power supply layers and an interlayer insulating film sandwiched between the power supply layers,
Forming a conductive fine particle dispersed film formed by dispersing conductive fine particles in an organic material on at least one surface of the interlayer insulating film as at least a part of the power supply layer;
And a step of curing the organic material without deforming the conductive fine particles. The interlayer insulating film is configured using an organic material that can be diluted or dissolved in the same solvent as the organic material that forms the conductive fine particle dispersion film,
The method for manufacturing a circuit board according to claim 12, wherein in the step of curing the organic material, the interlayer insulating film is simultaneously cured. After the step of forming the conductive fine particle dispersed film, before the step of curing the organic material,
Performing a step of covering the conductive fine particle dispersion film with an organic insulating film constituted by using an organic material that can be diluted or dissolved in the same solvent as the organic material constituting the conductive fine particle dispersion film;
The method for manufacturing a circuit board according to claim 12 or 13, wherein in the step of curing the organic material, the organic insulating film is also cured. A method of manufacturing a power supply structure comprising two power supply layers and an interlayer insulating film sandwiched between the power supply layers,
Forming a conductive fine particle dispersed film formed by dispersing conductive fine particles in an organic material on at least one surface of the interlayer insulating film as at least a part of the power supply layer;
A method of manufacturing a power supply structure, comprising: curing the organic material without deforming the conductive fine particles. The interlayer insulating film is configured using an organic material that can be diluted or dissolved in the same solvent as the organic material that forms the conductive fine particle dispersion film,
The method for manufacturing a power supply structure according to claim 15, wherein in the step of curing the organic material, the interlayer insulating film is simultaneously cured. After the step of forming the conductive fine particle dispersed film, before the step of curing the organic material,
Performing a step of covering the conductive fine particle dispersion film with an organic insulating film constituted by using an organic material that can be diluted or dissolved in the same solvent as the organic material constituting the fine particle dispersion film;
The method for manufacturing a power supply structure according to claim 15 or 16, wherein in the step of curing the organic material, the organic insulating film is also cured.