JP2012089864A5 - - Google Patents

Download PDF

Info

Publication number
JP2012089864A5
JP2012089864A5 JP2011265534A JP2011265534A JP2012089864A5 JP 2012089864 A5 JP2012089864 A5 JP 2012089864A5 JP 2011265534 A JP2011265534 A JP 2011265534A JP 2011265534 A JP2011265534 A JP 2011265534A JP 2012089864 A5 JP2012089864 A5 JP 2012089864A5
Authority
JP
Japan
Prior art keywords
layer
encapsulating layer
encapsulating
group
encapsulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011265534A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012089864A (ja
Filing date
Publication date
Priority claimed from US10/818,912 external-priority patent/US7868343B2/en
Application filed filed Critical
Publication of JP2012089864A publication Critical patent/JP2012089864A/ja
Publication of JP2012089864A5 publication Critical patent/JP2012089864A5/ja
Pending legal-status Critical Current

Links

JP2011265534A 2004-04-06 2011-12-05 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法 Pending JP2012089864A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/818,912 2004-04-06
US10/818,912 US7868343B2 (en) 2004-04-06 2004-04-06 Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007507454A Division JP5376801B2 (ja) 2004-04-06 2005-04-05 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法

Publications (2)

Publication Number Publication Date
JP2012089864A JP2012089864A (ja) 2012-05-10
JP2012089864A5 true JP2012089864A5 (cg-RX-API-DMAC7.html) 2016-03-03

Family

ID=34965375

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007507454A Expired - Fee Related JP5376801B2 (ja) 2004-04-06 2005-04-05 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法
JP2011265534A Pending JP2012089864A (ja) 2004-04-06 2011-12-05 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2007507454A Expired - Fee Related JP5376801B2 (ja) 2004-04-06 2005-04-05 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法

Country Status (8)

Country Link
US (2) US7868343B2 (cg-RX-API-DMAC7.html)
EP (1) EP1741315B1 (cg-RX-API-DMAC7.html)
JP (2) JP5376801B2 (cg-RX-API-DMAC7.html)
KR (2) KR101138540B1 (cg-RX-API-DMAC7.html)
AT (1) ATE415072T1 (cg-RX-API-DMAC7.html)
DE (1) DE602005011119D1 (cg-RX-API-DMAC7.html)
TW (1) TWI364115B (cg-RX-API-DMAC7.html)
WO (1) WO2005101909A1 (cg-RX-API-DMAC7.html)

Families Citing this family (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
US7777235B2 (en) * 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP2005167091A (ja) * 2003-12-04 2005-06-23 Nitto Denko Corp 光半導体装置
US7355284B2 (en) * 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
KR100683674B1 (ko) * 2004-06-29 2007-02-20 삼성에스디아이 주식회사 유기 전계 발광 소자 및 이의 제조 방법
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
KR100638611B1 (ko) * 2004-08-12 2006-10-26 삼성전기주식회사 다중 렌즈 발광 다이오드
US7217583B2 (en) 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US7675079B1 (en) * 2004-10-28 2010-03-09 Kley Victor B Diamond coating of silicon-carbide LEDs
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US9929326B2 (en) 2004-10-29 2018-03-27 Ledengin, Inc. LED package having mushroom-shaped lens with volume diffuser
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
US8816369B2 (en) * 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US20060091418A1 (en) * 2004-11-04 2006-05-04 Chew Tong F Side emitting LED device and method of fabrication
US7452737B2 (en) * 2004-11-15 2008-11-18 Philips Lumileds Lighting Company, Llc Molded lens over LED die
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
US20060124941A1 (en) * 2004-12-13 2006-06-15 Lee Jae S Thin gallium nitride light emitting diode device
US7723736B2 (en) * 2004-12-14 2010-05-25 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
EP1864339A4 (en) * 2005-03-11 2010-12-29 Seoul Semiconductor Co Ltd LED CAPSULATION WITH A GROUP IN A SERIES OF SWITCHED LUMINAIRES
US8835952B2 (en) 2005-08-04 2014-09-16 Cree, Inc. Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
TWI271883B (en) * 2005-08-04 2007-01-21 Jung-Chieh Su Light-emitting devices with high extraction efficiency
US7952108B2 (en) * 2005-10-18 2011-05-31 Finisar Corporation Reducing thermal expansion effects in semiconductor packages
KR100693463B1 (ko) * 2005-10-21 2007-03-12 한국광기술원 2 이상의 물질을 포함하는 봉지층을 구비한 광 확산 발광다이오드
JP2007299981A (ja) * 2006-05-01 2007-11-15 Sumitomo Osaka Cement Co Ltd 発光素子封止用組成物及び発光素子並びに光半導体装置
CN101460779A (zh) 2005-12-21 2009-06-17 科锐Led照明技术公司 照明装置
JP2007273562A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 半導体発光装置
US8969908B2 (en) 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
US8547002B2 (en) * 2006-05-02 2013-10-01 Switch Bulb Company, Inc. Heat removal design for LED bulbs
EA200870494A1 (ru) * 2006-05-02 2009-06-30 Супербалбс, Инк. Пластмассовая светодиодная лампа
MX2008013868A (es) * 2006-05-02 2009-02-03 Superbulbs Inc Metodo de dispersion de luz y difraccion preferencial de ciertas longitudes de onda de luz para diodos emisores de luz y bulbos construidos a partir de los mismos.
KR100731678B1 (ko) * 2006-05-08 2007-06-22 서울반도체 주식회사 칩형 발광 다이오드 패키지 및 그것을 갖는 발광 장치
EP2033235B1 (en) 2006-05-26 2017-06-21 Cree, Inc. Solid state light emitting device
CA2647845A1 (en) * 2006-05-30 2007-12-13 University Of Georgia Research Foundation White phosphors, methods of making white phosphors, white light emitting leds, methods of making white light emitting leds, and light bulb structures
US7842960B2 (en) * 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP4795293B2 (ja) * 2007-03-30 2011-10-19 ローム株式会社 半導体発光装置
US20100219734A1 (en) * 2007-06-08 2010-09-02 Superbulbs, Inc. Apparatus for cooling leds in a bulb
US7999283B2 (en) 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
US10505083B2 (en) 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
US9401461B2 (en) 2007-07-11 2016-07-26 Cree, Inc. LED chip design for white conversion
US11114594B2 (en) * 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US7791093B2 (en) * 2007-09-04 2010-09-07 Koninklijke Philips Electronics N.V. LED with particles in encapsulant for increased light extraction and non-yellow off-state color
WO2009035693A1 (en) 2007-09-14 2009-03-19 Superbulbs, Inc. Phosphor-containing led light bulb
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
US8439528B2 (en) 2007-10-03 2013-05-14 Switch Bulb Company, Inc. Glass LED light bulbs
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
EP2215403A4 (en) 2007-10-24 2012-08-29 Switch Bulb Co Inc DIFFUSER FOR LIGHT SOURCES OF LIGHT EMITTING DIODES
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
TW200932035A (en) * 2008-01-04 2009-07-16 Lighthouse Technology Co Ltd Light-emitting element
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
JP5372024B2 (ja) * 2008-03-07 2013-12-18 コーニンクレッカ フィリップス エヌ ヴェ 可変色発光装置
US8637883B2 (en) 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
US8877524B2 (en) * 2008-03-31 2014-11-04 Cree, Inc. Emission tuning methods and devices fabricated utilizing methods
DE102008016487A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
US9287469B2 (en) * 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
JP2011523511A (ja) 2008-05-29 2011-08-11 クリー インコーポレイテッド 近距離場で光を混合する光源
WO2010021676A1 (en) * 2008-08-18 2010-02-25 Superbulbs, Inc. Anti-reflective coatings for light bulbs
WO2010021675A1 (en) * 2008-08-18 2010-02-25 Superbulbs, Inc. Settable light bulbs
US9107273B2 (en) * 2008-09-11 2015-08-11 Switch Bulb Company, Inc. End-of-life bulb circuitry
US8075165B2 (en) 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
TWI426206B (zh) * 2008-12-25 2014-02-11 友達光電股份有限公司 發光二極體裝置
US8343575B2 (en) 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
TWI463708B (zh) * 2009-02-24 2014-12-01 榮創能源科技股份有限公司 側面出光型發光元件封裝結構及其製造方法
US8692274B2 (en) 2009-02-24 2014-04-08 Industrial Technology Research Institute Light emitting diode package structure
US8299489B2 (en) * 2010-08-03 2012-10-30 Silitek Electronics (Guangzhou) Co., Ltd. Illumination device
TWM374650U (en) * 2009-04-20 2010-02-21 Hsin I Technology Co Ltd LED packaging structure
US8168998B2 (en) 2009-06-09 2012-05-01 Koninklijke Philips Electronics N.V. LED with remote phosphor layer and reflective submount
US8415692B2 (en) * 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
KR101172143B1 (ko) * 2009-08-10 2012-08-07 엘지이노텍 주식회사 백색 발광다이오드 소자용 시온계 산화질화물 형광체, 그의 제조방법 및 그를 이용한 백색 ｌｅｄ 소자
KR101163902B1 (ko) * 2010-08-10 2012-07-09 엘지이노텍 주식회사 발광 소자
US9909058B2 (en) 2009-09-02 2018-03-06 Lg Innotek Co., Ltd. Phosphor, phosphor manufacturing method, and white light emitting device
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
JP5678629B2 (ja) * 2010-02-09 2015-03-04 ソニー株式会社 発光装置の製造方法
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN102456804A (zh) * 2010-10-20 2012-05-16 展晶科技(深圳)有限公司 封装体、发光二极管封装结构及封装体的制造方法
KR102098682B1 (ko) 2010-11-10 2020-05-22 나노시스, 인크. 양자 도트 필름들, 조명 디바이스들, 및 조명 방법들
JP5733743B2 (ja) * 2010-12-15 2015-06-10 日東電工株式会社 光半導体装置
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US8226274B2 (en) 2011-03-01 2012-07-24 Switch Bulb Company, Inc. Liquid displacer in LED bulbs
US20140003074A1 (en) * 2011-03-16 2014-01-02 Katsuhiko Kishimoto Wavelength conversion member and method for manufacturing the same, and light-emitting device, illuminating device, and headlight
JP2012204072A (ja) * 2011-03-24 2012-10-22 Sharp Corp 発光装置、照明装置および車両用前照灯
CN103443941A (zh) * 2011-03-31 2013-12-11 松下电器产业株式会社 半导体发光装置
KR101644051B1 (ko) * 2011-05-20 2016-08-01 삼성전자 주식회사 광전자 소자 및 적층 구조
KR101771175B1 (ko) * 2011-06-10 2017-09-06 삼성전자주식회사 광전자 소자 및 적층 구조
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
JP2014525146A (ja) 2011-07-21 2014-09-25 クリー インコーポレイテッド 発光デバイス、パッケージ、部品、ならびに改良された化学抵抗性のための方法および関連する方法
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
US8591069B2 (en) 2011-09-21 2013-11-26 Switch Bulb Company, Inc. LED light bulb with controlled color distribution using quantum dots
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
US20130169144A1 (en) * 2012-01-03 2013-07-04 Lustrous Technology Ltd. Led package structure capable of adjusting the spatial color uniformity and the light distribution curve
US9240530B2 (en) 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
CN102593321B (zh) * 2012-02-20 2015-11-25 深圳市安普光光电科技有限公司 Led的封装方法、led封装结构及显示屏
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
DE102012215514A1 (de) * 2012-08-31 2014-03-06 Osram Gmbh Verfahren zum Herstellen eines LED-Moduls und LED-Modul
US20140146543A1 (en) * 2012-11-26 2014-05-29 Magic Lighting Optics Outdoor lighting device
US20140209950A1 (en) * 2013-01-31 2014-07-31 Luxo-Led Co., Limited Light emitting diode package module
JP6286026B2 (ja) 2013-04-25 2018-02-28 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 発光ダイオードコンポーネント
US9799626B2 (en) * 2014-09-15 2017-10-24 Invensas Corporation Semiconductor packages and other circuit modules with porous and non-porous stabilizing layers
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
WO2019057534A1 (en) * 2017-09-19 2019-03-28 Lumileds Holding B.V. LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
US11075128B2 (en) * 2019-10-03 2021-07-27 Utica Leaseco, Llc Modules incorporating encapsulation layers
EP4649534A1 (en) * 2023-01-13 2025-11-19 Lumileds LLC Wavelength converter with stepped-index anti-reflection layers

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994586U (cg-RX-API-DMAC7.html) * 1972-12-08 1974-08-15
JPS60153538U (ja) 1984-03-22 1985-10-12 ロ−ム株式会社 半導体素子
JPS6222491A (ja) 1985-07-23 1987-01-30 Toshiba Corp 半導体発光装置
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4918497A (en) * 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5338994A (en) * 1989-07-20 1994-08-16 General Electric Company Method and apparatus for achieving current balance in parallel connected switching devices
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5194161A (en) * 1989-09-25 1993-03-16 Board Of Regents, The University Of Texas System Materials and methods for enhanced photocatalyzation of organic compounds with palladium
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
JP3183715B2 (ja) 1992-06-18 2001-07-09 ローム株式会社 樹脂封止型光学素子
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5604135A (en) * 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5803579A (en) * 1996-06-13 1998-09-08 Gentex Corporation Illuminator assembly incorporating light emitting diodes
KR100808749B1 (ko) * 1996-06-26 2008-02-29 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 발광 변환 소자를 포함하는 발광 반도체 소자
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US5912447A (en) * 1997-01-14 1999-06-15 United Parcel Service Of America, Inc. Concentric optical path equalizer with radially moving mirrors
CA2296026A1 (en) 1997-07-11 1999-01-21 Fed Corporation Bonded active matrix organic light emitting device display and method of producing the same
JP3830238B2 (ja) 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP2001196636A (ja) 2000-01-06 2001-07-19 Casio Comput Co Ltd 発光素子
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6417019B1 (en) * 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP4114331B2 (ja) * 2001-06-15 2008-07-09 豊田合成株式会社 発光装置
US6765351B2 (en) * 2001-12-20 2004-07-20 The Trustees Of Princeton University Organic optoelectronic device structures
EP1501909B1 (de) 2002-05-06 2008-02-27 Osram Opto Semiconductors GmbH Wellenlängenkonvertierende reaktionsharzmasse und leuchtdiodenbauelement
US6870311B2 (en) * 2002-06-07 2005-03-22 Lumileds Lighting U.S., Llc Light-emitting devices utilizing nanoparticles
JP4240276B2 (ja) * 2002-07-05 2009-03-18 株式会社半導体エネルギー研究所 発光装置
JP2004071908A (ja) * 2002-08-07 2004-03-04 Matsushita Electric Works Ltd 発光装置
KR20110118848A (ko) * 2002-09-19 2011-11-01 크리 인코포레이티드 경사 측벽을 포함하고 인광물질이 코팅된 발광 다이오드, 및 그의 제조방법
US6717362B1 (en) * 2002-11-14 2004-04-06 Agilent Technologies, Inc. Light emitting diode with gradient index layering
US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
JP3102445U (ja) * 2003-12-24 2004-07-08 實慶 孫 発光ダイオード装置
JP2005197317A (ja) * 2003-12-26 2005-07-21 Toshiba Corp 固体照明素子
WO2005067524A2 (en) 2004-01-15 2005-07-28 Nanosys, Inc. Nanocrystal doped matrixes
JP2005310756A (ja) * 2004-03-26 2005-11-04 Koito Mfg Co Ltd 光源モジュールおよび車両用前照灯

Similar Documents

Publication Publication Date Title
JP2012089864A5 (cg-RX-API-DMAC7.html)
TWI364115B (en) Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
JP6348491B2 (ja) セラミック緑色蛍光体と保護された赤色蛍光体層とを有するｌｅｄ
CN107195751B (zh) 发光二极管封装结构
WO2015188486A1 (zh) 有机发光器件及其制备方法和有机发光显示装置
JP2010510685A5 (cg-RX-API-DMAC7.html)
CN107221607B (zh) 一种显示器件的封装结构及其制作方法、显示装置
WO2016190207A1 (ja) Ｌｅｄデバイス、ｌｅｄモジュール及び紫外線発光装置
JP2018056552A5 (cg-RX-API-DMAC7.html)
CN105009312B (zh) 光电子器件和用于制造光电子器件的方法
JP2019501407A (ja) 変換要素、それが設けられたオプトエレクトロニクス部品、および変換要素を製造する方法
CN102437273B (zh) 利用表面改性实现无透镜封装的led封装器件及其方法
CN102983254A (zh) 白光led的封装方法
CN204391150U (zh) 改良的发光二极管封装结构
CN110323340A (zh) 发光装置及其制造方法
JP5738541B2 (ja) 光半導体装置
JP7193532B2 (ja) 発光デバイスパッケージ
US8614453B2 (en) Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof
CN108807643B (zh) 一种半导体封装结构及其制造方法
CN105720175B (zh) 一种发光二极管的封装方法
CN106356440A (zh) 固晶胶及光电元件封装结构
CN102487117A (zh) 透光盖板及其制法及发光二极管的封装结构
TWI497776B (zh) 半導體組件之製造方法
CN202405307U (zh) 光学透镜组的具有荧光层的封装结构
CN102479888B (zh) 在两光学透镜及分隔环界定的槽间中填注并密封荧光层的方法