JP2012078694A - 液晶表示装置 - Google Patents
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Abstract
【解決手段】ガラスで形成されたTFT基板100の上に画素電極101が形成されている。画素電極101を覆ってゲート絶縁膜103が形成され、その上に無機パッシベーション膜109が形成され、その上にコモン電極111が形成されている。コモン電極111に形成されたスリット部112における電気力線によって液晶分子200を駆動する。画素電極101とゲート絶縁膜103との間にコモン電極111と接続した容量電極108を形成し、画素電極101との間に付加容量150を形成する。この付加容量150によって、ゲート電圧の変動に起因する画素電極電位の変動を抑えることが出来る。
【選択図】図2
Description
Claims (9)
- TFT基板と対向基板と前記TFT基板と前記対向基板との間に液晶が挟持された液晶表示装置であって、
前記TFT基板において、走査線が第1の方向に延在して第2の方向に配列し、映像信号線が第2の方向に延在して第1の方向に配列し、前記走査線と前記映像信号線との間に画素が形成され、
前記TFT基板の上に画素電極が形成され、前記画素電極の上にゲート絶縁膜が形成され、前記ゲート絶縁膜の上に無機パッシベーション膜が形成され、前記無機パッシベーション膜の上にスリットを有するコモン電極が形成され、前記画素電極に映像信号が供給されることによって液晶が駆動され、
金属または合金で形成された容量電極が前記ゲート絶縁膜の上で、かつ、前記無機パッシベーション膜の下に、前記画素電極と対向して形成され、
前記画素電極はTFTと接続し、前記容量電極は前記コモン電極と接続し、前記容量電極と前記画素電極とで付加容量を形成していることを特徴とする液晶表示装置。 - 前記画素は前記第2の方向にインライン状に配列していることを特徴とする請求項1に記載の液晶表示装置。
- 前記画素はデルタ配置をしていることを特徴とする請求項1に記載の液晶表示装置。
- 前記TFTにおけるゲート絶縁膜は前記付加容量におけるゲート絶縁膜よりも膜厚が大きいことを特徴とする請求項1に記載の液晶表示装置。
- TFT基板と対向基板と前記TFT基板と前記対向基板との間に液晶が挟持された液晶表示装置であって、
前記TFT基板において、第1の走査線と第2の走査線からなる走査線ペアが第1の方向に延在して第2の方向に配列し、映像信号線が第2の方向に延在して第1の方向に配列し、前記走査線ペアと前記映像信号線との間に第1の画素と第2の画素が前記第1の方向に並んで形成され、
前記第1の走査線によって前記第1の画素が駆動され、前記第2の走査線によって前記第2の画素が駆動され、
前記第1の画素に対応して第1のTFTが形成され、前記第2の画素に対応して第2のTFTが形成され、
前記第1の画素および第2の画素において、前記TFT基板の上に各々第1の画素電極と第2の画素電極が形成され、前記画素電極の上にゲート絶縁膜が形成され、前記ゲート絶縁膜の上に無機パッシベーション膜が形成され、前記無機パッシベーション膜の上にスリットを有するコモン電極が形成され、前記画素電極に映像信号が供給されることによって液晶が駆動され、
金属または合金で形成された第1の容量電極が前記ゲート絶縁膜の上で、かつ、前記無機パッシベーション膜の下に、前記第1の画素電極と対向して形成され、
金属または合金で形成された第2の容量電極が前記ゲート絶縁膜の上で、かつ、前記無機パッシベーション膜の下に、前記第2の画素電極と対向して形成され、
前記第1の容量電極は前記コモン電極と接続し、前記第1の容量電極と前記第1の画素電極で第1の付加容量を形成し、
前記第2の容量電極は前記コモン電極と接続し、前記第2の容量電極と前記第2の画素電極で第2の付加容量を形成していることを特徴とする液晶表示装置。 - 前記第1の画素および前記第2の画素は前記第2の方向にインライン状に配列していることを特徴とする請求項5に記載の液晶表示装置。
- 前記第1の画素および前記第2の画素はデルタ配置をしていることを特徴とする請求項5に記載の液晶表示装置。
- 前記第1の容量電極と前記第2の容量電極は連続していることを特徴とする請求項5に記載の液晶表示装置。
- 前記第1のTFTおよび前記第2のTFTにおけるゲート絶縁膜は前記第1の付加容量および前記第2の付加容量におけるゲート絶縁膜よりも膜厚が大きいことを特徴とする請求項5に記載の液晶表示装置。
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JP2010225632A JP5351118B2 (ja) | 2010-10-05 | 2010-10-05 | 液晶表示装置 |
US13/251,384 US8908114B2 (en) | 2010-10-05 | 2011-10-03 | Liquid crystal display device |
US14/533,591 US9329444B2 (en) | 2010-10-05 | 2014-11-05 | Liquid crystal display device |
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US9366890B2 (en) | 2013-02-12 | 2016-06-14 | Samsung Display Co., Ltd. | Liquid crystal display |
US9666613B2 (en) | 2013-08-12 | 2017-05-30 | Samsung Display Co., Ltd. | Display substrate comprising a plurality of conductive patterns |
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JP2013092613A (ja) * | 2011-10-25 | 2013-05-16 | Japan Display East Co Ltd | 液晶表示装置及びその製造方法 |
JP5917127B2 (ja) | 2011-12-19 | 2016-05-11 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
JP2014048339A (ja) | 2012-08-29 | 2014-03-17 | Japan Display Inc | 液晶表示装置 |
US10416504B2 (en) * | 2013-05-21 | 2019-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
TWI749810B (zh) * | 2013-08-28 | 2021-12-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
CN104298020A (zh) * | 2014-10-20 | 2015-01-21 | 京东方科技集团股份有限公司 | 应用于ads显示装置中的阵列基板 |
CN107077035B (zh) * | 2014-11-21 | 2021-05-18 | 夏普株式会社 | 有源矩阵基板及显示面板 |
DE102016117701B4 (de) * | 2016-05-16 | 2018-05-30 | Shanghai Tianma Micro-electronics Co., Ltd. | Arraysubstrat, Anzeigefeld und Anzeigevorrichtung |
CN105785679A (zh) * | 2016-05-16 | 2016-07-20 | 上海天马微电子有限公司 | 一种阵列基板、显示面板和显示装置 |
CN105977261B (zh) | 2016-05-27 | 2019-01-04 | 武汉华星光电技术有限公司 | 阵列基板、液晶显示面板及液晶显示装置 |
CN106647059B (zh) * | 2017-01-04 | 2021-01-22 | 京东方科技集团股份有限公司 | 阵列基板、显示面板及其制造方法 |
CN114843328A (zh) * | 2022-04-26 | 2022-08-02 | 武汉华星光电半导体显示技术有限公司 | 显示面板以及显示装置 |
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JP2007298976A (ja) * | 2006-04-06 | 2007-11-15 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及び半導体装置、並びに電子機器 |
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US20120081648A1 (en) | 2012-04-05 |
US8908114B2 (en) | 2014-12-09 |
US20150055038A1 (en) | 2015-02-26 |
US9329444B2 (en) | 2016-05-03 |
JP5351118B2 (ja) | 2013-11-27 |
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