JP2012054475A5 - - Google Patents

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Publication number
JP2012054475A5
JP2012054475A5 JP2010197081A JP2010197081A JP2012054475A5 JP 2012054475 A5 JP2012054475 A5 JP 2012054475A5 JP 2010197081 A JP2010197081 A JP 2010197081A JP 2010197081 A JP2010197081 A JP 2010197081A JP 2012054475 A5 JP2012054475 A5 JP 2012054475A5
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JP
Japan
Prior art keywords
substrate
processing chamber
heating
gas
containing gas
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Pending
Application number
JP2010197081A
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English (en)
Japanese (ja)
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JP2012054475A (ja
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Priority to JP2010197081A priority Critical patent/JP2012054475A/ja
Priority claimed from JP2010197081A external-priority patent/JP2012054475A/ja
Publication of JP2012054475A publication Critical patent/JP2012054475A/ja
Publication of JP2012054475A5 publication Critical patent/JP2012054475A5/ja
Pending legal-status Critical Current

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JP2010197081A 2010-09-02 2010-09-02 基板処理装置及び半導体装置の製造方法 Pending JP2012054475A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010197081A JP2012054475A (ja) 2010-09-02 2010-09-02 基板処理装置及び半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010197081A JP2012054475A (ja) 2010-09-02 2010-09-02 基板処理装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2012054475A JP2012054475A (ja) 2012-03-15
JP2012054475A5 true JP2012054475A5 (https=) 2013-10-17

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ID=45907474

Family Applications (1)

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JP2010197081A Pending JP2012054475A (ja) 2010-09-02 2010-09-02 基板処理装置及び半導体装置の製造方法

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JP (1) JP2012054475A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140034632A1 (en) * 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3220645B2 (ja) * 1996-09-06 2001-10-22 富士通株式会社 半導体装置の製造方法
CN100485885C (zh) * 2003-12-18 2009-05-06 东京毅力科创株式会社 成膜方法
CN1993813B (zh) * 2004-08-13 2010-12-22 东京毅力科创株式会社 半导体装置的制造方法和等离子体氧化处理方法
JPWO2006098300A1 (ja) * 2005-03-16 2008-08-21 株式会社日立国際電気 基板処理方法及び基板処理装置
JP2007221058A (ja) * 2006-02-20 2007-08-30 Toshiba Corp 半導体装置の製造方法
JP2010118489A (ja) * 2008-11-13 2010-05-27 Hitachi Kokusai Electric Inc 半導体装置の製造方法

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