JP2012049542A - 集積型薄膜光起電力素子及びその製造方法 - Google Patents
集積型薄膜光起電力素子及びその製造方法 Download PDFInfo
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- 239000000126 substance Substances 0.000 abstract 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 169
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- 229910052710 silicon Inorganic materials 0.000 description 48
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- 239000002184 metal Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
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- 229910021478 group 5 element Inorganic materials 0.000 description 5
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- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
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- 239000007921 spray Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
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- AGVAZMGAQJOSFJ-WZHZPDAFSA-M cobalt(2+);[(2r,3s,4r,5s)-5-(5,6-dimethylbenzimidazol-1-yl)-4-hydroxy-2-(hydroxymethyl)oxolan-3-yl] [(2r)-1-[3-[(1r,2r,3r,4z,7s,9z,12s,13s,14z,17s,18s,19r)-2,13,18-tris(2-amino-2-oxoethyl)-7,12,17-tris(3-amino-3-oxopropyl)-3,5,8,8,13,15,18,19-octamethyl-2 Chemical compound [Co+2].N#[C-].[N-]([C@@H]1[C@H](CC(N)=O)[C@@]2(C)CCC(=O)NC[C@@H](C)OP(O)(=O)O[C@H]3[C@H]([C@H](O[C@@H]3CO)N3C4=CC(C)=C(C)C=C4N=C3)O)\C2=C(C)/C([C@H](C\2(C)C)CCC(N)=O)=N/C/2=C\C([C@H]([C@@]/2(CC(N)=O)C)CCC(N)=O)=N\C\2=C(C)/C2=N[C@]1(C)[C@@](C)(CC(N)=O)[C@@H]2CCC(N)=O AGVAZMGAQJOSFJ-WZHZPDAFSA-M 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L31/042—PV modules or arrays of single PV cells
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Abstract
【解決手段】 集積型薄膜光起電力素子は、複数のトレンチが形成された基板と、前記トレンチそれぞれの内部の一基線から前記トレンチそれぞれの一側面及び前記一側面から続く前記基板の突出面領域上に形成された第1半導体物質層と、及び前記トレンチそれぞれの内部の前記第1半導体物質層上の一基線から前記トレンチそれぞれの他側面及び前記他側面から続く前記基板の突出面領域上に形成された第2半導体物質層であって、前記トレンチそれぞれの内部で前記第1半導体物質層と一部が重なった前記第2半導体物質層と、を含む。
【選択図】図3E
Description
[第1実施例]
図2Aないし図2Gは、本発明の第1実施例による集積型薄膜光起電力素子の製造方法を示す。
図3Aないし図3Fは、本発明の第2実施例による透過型(see-through type)集積型薄膜光起電力素子の製造方法を示す。
図4Aないし図4Eは、本発明の第3実施例による集積型薄膜光起電力素子の製造方法を示す。
101、201、203、205 トレンチ
202、204 ホール
110、210 第1外因性多結晶シリコン層
120a、220a 第1中間真性多結晶シリコン層
120b、220b 第2中間真性多結晶シリコン層
130、230 第2外因性多結晶シリコン層
140、240 補助電極層
Claims (18)
- 基板に複数のトレンチを形成する段階と、
前記トレンチそれぞれの内部の一基線から前記トレンチそれぞれの一側面及び前記一側面から続く前記基板の突出面の領域上に第1半導体物質層を形成する段階と、
前記トレンチそれぞれの内部の前記第1半導体物質層上の一基線から前記トレンチそれぞれの他側面及び前記他側面から続く前記基板(a resultant substrate)の突出面領域上に第2半導体物質層を形成して、前記トレンチそれぞれの内部で前記第1半導体物質層と前記第2半導体物質層の一部が重なるように、前記第2半導体物質層を形成する段階と、
を含む集積型薄膜光起電力素子の製造方法。 - 前記基板上に前記第1半導体物質層を形成する段階と前記第2半導体物質層を形成する段階の間に、第1中間真性半導体層及び第2中間真性半導体層を形成する段階をさらに含むことを特徴とする請求項1に記載の集積型薄膜光起電力素子の製造方法。
- 前記第1半導体物質層を形成する段階は、第1不純物雰囲気で第1真性半導体物質が一側からななめに放出され、第1不純物及び第1真性半導体物質が一側からななめに放出され、または、第1半導体物質が一側からななめに放出されて、前記基板上に蒸着される段階、を含み、
前記第1中間真性半導体層を形成する段階は、第1中間真性半導体物質が前記一側または前記一側の向かい側からななめに放出されて、前記基板(a resultant substrate)上に蒸着される段階、を含み、
前記第2中間真性半導体層を形成する段階は、前記第1中間真性半導体物質が放出された一側の向かい側から第2中間真性半導体物質がななめに放出されて、前記基板(a resultant substrate)上に蒸着される段階、を含み、
前記第2半導体物質層を形成する段階は、第2不純物雰囲気で第2真性半導体物質が前記第1半導体物質が放出された一側の向かい側からななめに放出され、第2不純物及び第2真性半導体物質が前記第1半導体物質が放出された一側の向かい側からななめに放出され、または、第2半導体物質が前記第1半導体物質が放出された一側の向かい側からななめに放出されて、前記基板(a resultant substrate)上に蒸着される段階、を含むことを特徴とする請求項2に記載の集積型薄膜光起電力素子の製造方法。 - 前記第1半導体物質、前記第1中間真性半導体物質、前記第2中間真性半導体物質及び前記第2半導体物質は前記それぞれの蒸着段階で、または前記一つ以上の蒸着段階で、または前記それぞれの蒸着段階後に、または前記一つ以上の蒸着段階後に結晶化されることを特徴とする請求項3に記載の集積型薄膜光起電力素子の製造方法。
- 前記トレンチの間の前記基板の突出面領域に光が透過されるホールを形成する段階をさらに含むことを特徴とする請求項1〜4のいずれか一項に記載の集積型薄膜光起電力素子の製造方法。
- 前記基板が導電性材質である場合、前記基板の一表面または全表面に絶縁膜をコーティングする段階をさらに含むことを特徴とする請求項1〜5のいずれか一項に記載の集積型薄膜光起電力素子の製造方法
- 前記第1半導体物質層の下部、および前記第2半導体物質層の上部のうち少なくとも一つに前記第1または第2半導体物質層より電気抵抗が小さな補助電極層を形成する段階をさらに含むことを特徴とする請求項1〜6のいずれか一項に記載の集積型薄膜光起電力素子の製造方法。
- 前記第1半導体物質、前記第1中間真性半導体物質、前記第2中間真性半導体物質及び前記第2半導体物質を蒸着するそれぞれの段階は、直進性がある電子ビーム蒸着法、熱蒸着法、スプレー蒸着法、またはスパッタ蒸着法のうち少なくとも一つによって遂行されることを特徴とする請求項3に記載の集積型薄膜光起電力素子の製造方法。
- 複数のトレンチが形成された基板と、
前記トレンチそれぞれの内部の第1基線から前記トレンチそれぞれの一側面及び前記一側面から続く前記基板の突出面領域上に形成された第1半導体物質層と、
前記トレンチそれぞれの内部の前記第1半導体物質層上の第2基線から前記トレンチそれぞれの他側面及び前記他側面から続く前記基板の突出面領域上に形成された第2半導体物質層であって、前記トレンチそれぞれの内部で前記第1半導体物質層と一部が重なった前記第2半導体物質層と、を含む集積型薄膜光起電力素子。 - 前記基板の突出面領域上では前記第1半導体物質層と前記第2半導体物質層との間に位置し、前記トレンチ内部では前記第1基線と前記第2基線との間の少なくとも一部領域で前記第1半導体物質層と前記第2半導体物質層とが重なるように形成された第1中間真性半導体層及び第2中間真性半導体層をさらに含むことを特徴とする請求項9に記載の集積型薄膜光起電力素子。
- 前記第1半導体物質層、前記第2半導体物質層、前記第1中間真性半導体層及び前記第2中間真性半導体層のうち少なくとも一つ以上は結晶化されたことを特徴とする請求項10に記載の集積型薄膜光起電力素子。
- 前記トレンチの間の前記基板の突出面領域に光が透過されるホールが位置することを特徴とする請求項9〜11のいずれか一項に記載の集積型薄膜光起電力素子。
- 前記ホールは前記基板を貫通することを特徴とする請求項12に記載の集積型薄膜光起電力素子。
- 前記ホールの幅または直径に対する深さの比は、前記トレンチの幅に対する深さの比より大きいことを特徴とする請求項12に記載の集積型薄膜光起電力素子。
- 前記第1半導体物質層は第1不純物を含み、前記第2半導体物質層は前記第1不純物と異なる第2不純物を含み、前記第1半導体物質層と前記第2半導体物質層は、pn接合を形成することを特徴とする請求項9〜14のいずれか一項に記載の集積型薄膜光起電力素子。
- 前記第1半導体物質層の下部または前記第2半導体物質層の上部のうち少なくとも一つに前記第1または第2半導体物質より電気抵抗が小さな補助電極層が位置することを特徴とする請求項9〜15のいずれか一項に記載の集積型薄膜光起電力素子。
- 前記第1半導体物質層の下部及び前記第2半導体物質層の上部にそれぞれ前記第1または第2半導体物質より電気抵抗が小さな第1補助電極層及び第2補助電極層が位置し、前記第1補助電極層と前記第2補助電極層とのうちで少なくとも一つは透明導電膜(TCO)であることを特徴とする請求項9〜15のいずれか一項に記載の集積型薄膜光起電力素子。
- 前記第1半導体物質層と前記第2半導体物質層の上部に形成される前記第2補助電極層とがトレンチ内部で重なるか、または前記第2半導体物質層と前記第1半導体物質層の下部に形成される前記第1補助電極層とがトレンチ内部で重なるか、または、前記第1補助電極層及び前記第2補助電極層がトレンチ内部で重なることを特徴とする請求項17に記載の集積型薄膜光起電力素子。
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016508672A (ja) * | 2013-01-30 | 2016-03-22 | ビッグ ソーラー リミテッドBig Solar Limited | 光電子デバイス及びその製造方法 |
JP2017501587A (ja) * | 2013-12-31 | 2017-01-12 | コリア アドバンスト インスティテュート オブ サイエンスアンド テクノロジーKorea Advanced Institute Of Science And Technology | 集積型薄膜太陽電池の製造装置 |
US10586881B2 (en) | 2016-04-07 | 2020-03-10 | Power Roll Limited | Gap between semiconductors |
US10665737B2 (en) | 2011-06-23 | 2020-05-26 | Power Roll Limited | Method of making a structure comprising coating steps and corresponding structure and devices |
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US10797184B2 (en) | 2016-04-07 | 2020-10-06 | Power Roll Limited | Aperture in a semiconductor |
US10964832B2 (en) | 2016-10-11 | 2021-03-30 | Power Roll Limited | Capacitors in grooves |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5864360B2 (ja) * | 2011-06-30 | 2016-02-17 | 東京エレクトロン株式会社 | シリコン膜の形成方法およびその形成装置 |
KR101356034B1 (ko) * | 2011-12-21 | 2014-01-29 | 한국과학기술원 | 유기 태양전지 모듈 제조방법 및 이에 의해 제조된 유기 태양전지 모듈 |
AT512677B1 (de) * | 2012-03-30 | 2013-12-15 | Oesterreichisches Forschungs Und Pruefzentrum Arsenal Ges M B H | Herstellungsverfahren strukturierter Dünnschicht Photovoltaik |
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US9246039B2 (en) | 2012-10-12 | 2016-01-26 | International Business Machines Corporation | Solar cell with reduced absorber thickness and reduced back surface recombination |
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FR3051601A1 (fr) * | 2016-05-20 | 2017-11-24 | Electricite De France | Dispositif photovoltaique en couches minces et procede de fabrication associe |
KR102253547B1 (ko) * | 2018-11-29 | 2021-05-18 | 울산과학기술원 | 무색 투명 반도체 기판 및 이의 제조방법 |
KR102509612B1 (ko) * | 2021-02-25 | 2023-03-14 | 울산과학기술원 | 양면 투광성 향상을 위한 투명 반도체 기판 및 그 제조방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6135573A (ja) * | 1984-07-27 | 1986-02-20 | Matsushita Electric Ind Co Ltd | 光起電力素子の製造法 |
JP2005085501A (ja) * | 2003-09-04 | 2005-03-31 | Toyota Industries Corp | El装置及びその製造方法 |
JP2005084586A (ja) * | 2003-09-11 | 2005-03-31 | Sony Corp | 反射型液晶表示素子およびその製造方法、ならびに液晶表示装置 |
JP2007165903A (ja) * | 2005-12-14 | 2007-06-28 | Korea Advanced Inst Of Sci Technol | 集積型薄膜太陽電池及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4239554A (en) * | 1978-07-17 | 1980-12-16 | Shunpei Yamazaki | Semiconductor photoelectric conversion device |
US4570173A (en) * | 1981-05-26 | 1986-02-11 | General Electric Company | High-aspect-ratio hollow diffused regions in a semiconductor body |
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
US7732243B2 (en) * | 1995-05-15 | 2010-06-08 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
JP3436858B2 (ja) * | 1997-02-27 | 2003-08-18 | シャープ株式会社 | 薄膜太陽電池の製造方法 |
US6316283B1 (en) * | 1998-03-25 | 2001-11-13 | Asulab Sa | Batch manufacturing method for photovoltaic cells |
US7838868B2 (en) * | 2005-01-20 | 2010-11-23 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
WO2006107154A1 (en) * | 2005-03-16 | 2006-10-12 | Korea Advanced Institute Of Science And Technology | Integrated thin-film solar cells and method of manufacturing thereof and processing method of transparent electrode for integrated thin-film solar cells and structure thereof, and transparent substrate having processed transparent electrode |
KR100725110B1 (ko) * | 2005-12-14 | 2007-06-04 | 한국과학기술원 | 투과형 집적형 박막 태양전지 및 그 제조 방법. |
US7982127B2 (en) * | 2006-12-29 | 2011-07-19 | Industrial Technology Research Institute | Thin film solar cell module of see-through type |
US8476097B2 (en) * | 2007-08-30 | 2013-07-02 | Oerlikon Solar Ag, Trubbach | Method for manufacturing and scribing a thin-film solar cell |
WO2009126943A2 (en) * | 2008-04-11 | 2009-10-15 | Thin Film Devices, Inc. | Flexible photovoltaic device |
WO2010087388A1 (ja) * | 2009-01-29 | 2010-08-05 | 京セラ株式会社 | 光電変換セルおよび光電変換モジュール |
KR101028971B1 (ko) * | 2009-05-26 | 2011-04-19 | 한국과학기술원 | 집적형 박막 태양전지 및 그의 제조 방법 |
KR101112487B1 (ko) * | 2009-08-06 | 2012-03-09 | 한국과학기술원 | 광기전력 장치 및 그 제조 방법 |
-
2010
- 2010-08-26 KR KR1020100083178A patent/KR101060239B1/ko active IP Right Grant
-
2011
- 2011-08-24 CN CN201110243852XA patent/CN102386273A/zh active Pending
- 2011-08-25 JP JP2011183497A patent/JP5396444B2/ja not_active Expired - Fee Related
- 2011-08-25 US US13/217,707 patent/US20120048342A1/en not_active Abandoned
- 2011-08-26 EP EP11178975A patent/EP2423980A2/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6135573A (ja) * | 1984-07-27 | 1986-02-20 | Matsushita Electric Ind Co Ltd | 光起電力素子の製造法 |
JP2005085501A (ja) * | 2003-09-04 | 2005-03-31 | Toyota Industries Corp | El装置及びその製造方法 |
JP2005084586A (ja) * | 2003-09-11 | 2005-03-31 | Sony Corp | 反射型液晶表示素子およびその製造方法、ならびに液晶表示装置 |
JP2007165903A (ja) * | 2005-12-14 | 2007-06-28 | Korea Advanced Inst Of Sci Technol | 集積型薄膜太陽電池及びその製造方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10665737B2 (en) | 2011-06-23 | 2020-05-26 | Power Roll Limited | Method of making a structure comprising coating steps and corresponding structure and devices |
JP2016508672A (ja) * | 2013-01-30 | 2016-03-22 | ビッグ ソーラー リミテッドBig Solar Limited | 光電子デバイス及びその製造方法 |
US9899551B2 (en) | 2013-01-30 | 2018-02-20 | Big Solar Limited | Optoelectronic device and method of producing the same |
US10825941B2 (en) | 2013-01-30 | 2020-11-03 | Power Roll Limited | Optoelectronic device and method of producing the same |
JP2017501587A (ja) * | 2013-12-31 | 2017-01-12 | コリア アドバンスト インスティテュート オブ サイエンスアンド テクノロジーKorea Advanced Institute Of Science And Technology | 集積型薄膜太陽電池の製造装置 |
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US10797190B2 (en) | 2016-04-07 | 2020-10-06 | Power Roll Limited | Asymmetric groove |
US10797184B2 (en) | 2016-04-07 | 2020-10-06 | Power Roll Limited | Aperture in a semiconductor |
US10964832B2 (en) | 2016-10-11 | 2021-03-30 | Power Roll Limited | Capacitors in grooves |
US10978603B2 (en) | 2016-10-11 | 2021-04-13 | Power Roll Limited | Energy storage |
US11688817B2 (en) | 2016-10-11 | 2023-06-27 | Power Roll Limited | Capacitors in grooves |
US11777046B2 (en) | 2016-10-11 | 2023-10-03 | Power Roll Limited | Energy storage |
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