JP2012049375A - 分子線エピタキシー装置 - Google Patents
分子線エピタキシー装置 Download PDFInfo
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- 238000001451 molecular beam epitaxy Methods 0.000 title claims description 33
- 150000003254 radicals Chemical class 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000003071 parasitic effect Effects 0.000 claims abstract description 19
- 150000002831 nitrogen free-radicals Chemical class 0.000 claims abstract description 17
- 230000002265 prevention Effects 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 238000009616 inductively coupled plasma Methods 0.000 claims description 20
- 150000004767 nitrides Chemical class 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000010992 reflux Methods 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 6
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 239000000498 cooling water Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005347 demagnetization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000828 alnico Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen radicals Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000001072 vacuum ultraviolet spectrophotometry Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
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- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
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Abstract
【解決手段】MBE装置は、真空容器1と、真空容器1の内部に設けられ、基板3を保持し、基板3の回転、加熱が可能な基板ステージ2と、基板3表面に分子線(原子線)を照射する分子線セル4A〜Cと、基板3表面に窒素ラジカルを供給するラジカル源5と、を備えている。ラジカル源5は、SUSからなる供給管10と、供給管10に接続するプラズマ生成管11を有している。プラズマ生成管11の外側には、円筒形のCCP電極13が配置されていて、CCP電極13よりも下流側には、プラズマ生成管11の外周に沿って巻かれたコイル12を有している。供給管10とプラズマ生成管11との接続部における供給管10の開口には、セラミックからなる寄生プラズマ防止管15が挿入されている。
【選択図】図1
Description
2:基板ステージ
3:基板
4A〜C:分子線セル
5:ラジカル源
10:供給管
11:プラズマ生成管
12:コイル
13:CCP電極
14:永久磁石
15:寄生プラズマ防止管
16:給水管
17:排水管
18:筐体
Claims (5)
- ラジカルを生成するラジカル源と、分子線あるいは原子線を生成する分子線セルと、内部に基板を保持する真空容器とを有し、真空中において前記ラジカルと前記分子線あるいは原子線を基板に照射することによって、前記ラジカルの元素と前記分子線あるいは原子線の元素とで構成される化合物を前記基板上に結晶成長させる分子線エピタキシー装置において、
前記ラジカル源は、
気体を供給する導体からなる供給管と、
前記供給管に後続する誘電体からなるプラズマ生成管と、
前記プラズマ生成管の外壁に位置し、前記プラズマ生成管の内部に誘導結合プラズマを発生させるコイルと、
前記プラズマ生成管の外壁であって、前記コイルよりも前記供給管に近い側に位置し、前記プラズマ生成管の内部に容量結合プラズマを発生させて誘導結合プラズマ中に容量結合プラズマを導入する電極と、
誘電体からなり、前記供給管の開口であって前記供給管と前記プラズマ生成管との接続側に挿入され、前記供給管の内壁を覆う寄生プラズマ防止管と、
を有する、
ことを特徴とする分子線エピタキシー装置。 - 前記ラジカル源は、前記容量結合プラズマの発生する領域の前記プラズマ生成管外周に沿って配置され、前記プラズマ生成管の中心部に前記容量結合プラズマを偏在させる複数の永久磁石をさらに有することを特徴とする請求項1に記載の分子線エピタキシー装置。
- 前記電極は、その内部で水を還流させる中空部を有し、
前記永久磁石は、前記電極の内部であって、前記中空部に露出するよう配置されている、ことを特徴とする請求項1または請求項2に記載の分子線エピタキシー装置。 - 前記ラジカル源は、前記供給管により窒素が供給され、窒素ラジカルを生成する窒素ラジカル源であり、結晶成長させる前記化合物は窒化物である、ことを特徴とする請求項1ないし請求項3のいずれか1項に記載の分子線エピタキシー装置。
- 前記分子線セルは、III 族金属の分子線を生成するものであり、結晶成長させる前記化合物は、III 族窒化物半導体であることを特徴とする請求項4に記載の分子線エピタキシー装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2010190966A JP5673924B2 (ja) | 2010-08-27 | 2010-08-27 | 分子線エピタキシー装置 |
EP11819589.0A EP2610895B1 (en) | 2010-08-27 | 2011-08-24 | Radical source and molecular beam epitaxy apparatus |
PCT/JP2011/004684 WO2012026113A1 (ja) | 2010-08-27 | 2011-08-24 | ラジカル源及び分子線エピタキシー装置 |
US13/819,284 US9447518B2 (en) | 2010-08-27 | 2011-08-24 | Radical generator and molecular beam epitaxy apparatus |
US15/242,263 US10577719B2 (en) | 2010-08-27 | 2016-08-19 | Radical generator and molecular beam epitaxy apparatus |
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JP2010190697A JP2012047625A (ja) | 2010-08-27 | 2010-08-27 | ナノインデンテーション試験用圧子及びその製造方法 |
JP2010190966A JP5673924B2 (ja) | 2010-08-27 | 2010-08-27 | 分子線エピタキシー装置 |
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JP2014252892A Division JP5938809B2 (ja) | 2014-12-15 | 2014-12-15 | 分子線エピタキシー装置 |
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JP2012049375A true JP2012049375A (ja) | 2012-03-08 |
JP2012049375A5 JP2012049375A5 (ja) | 2013-12-05 |
JP5673924B2 JP5673924B2 (ja) | 2015-02-18 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012049028A (ja) * | 2010-08-27 | 2012-03-08 | Nagoya Univ | ラジカル源 |
JP2015109280A (ja) * | 2014-12-05 | 2015-06-11 | 国立大学法人名古屋大学 | ラジカル源 |
US10312054B2 (en) | 2014-02-24 | 2019-06-04 | National University Corporation Nagoya University | Radical generator and molecular beam epitaxy apparatus |
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Publication number | Priority date | Publication date | Assignee | Title |
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TWI651429B (zh) * | 2014-01-15 | 2019-02-21 | 澳洲商葛利文企業有限公司 | 用於減少薄膜中不純物之裝置及方法 |
US20180130639A1 (en) * | 2015-05-04 | 2018-05-10 | Michael Nicholas Vranich | External plasma system |
JP7332614B2 (ja) * | 2018-03-23 | 2023-08-23 | アプライド マテリアルズ インコーポレイテッド | 分離した裏側ヘリウム供給システム |
JP7165335B2 (ja) * | 2018-04-26 | 2022-11-04 | 国立大学法人東海国立大学機構 | 原子線発生装置、接合装置、表面改質方法及び接合方法 |
DE102022131435A1 (de) * | 2022-11-28 | 2024-05-29 | TRUMPF Hüttinger GmbH + Co. KG | Vorrichtung zur Erzeugung einer Plasmaflamme, Plasmaerzeugungseinrichtung, Hochtemperaturprozessanlage und entsprechendes Betriebsverfahren |
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JPH02218433A (ja) * | 1989-02-21 | 1990-08-31 | Nippon Telegr & Teleph Corp <Ntt> | パルスガスノズル装置およびパルスガスノズル反応装置 |
JP2005307332A (ja) * | 2004-03-26 | 2005-11-04 | Doshisha | 分子線エピタキシャル装置および分子線エピタキシャル装置を用いたiii族グループ窒化物の立方晶単結晶薄膜の製造方法 |
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JP2012049028A (ja) * | 2010-08-27 | 2012-03-08 | Nagoya Univ | ラジカル源 |
US10312054B2 (en) | 2014-02-24 | 2019-06-04 | National University Corporation Nagoya University | Radical generator and molecular beam epitaxy apparatus |
JP2015109280A (ja) * | 2014-12-05 | 2015-06-11 | 国立大学法人名古屋大学 | ラジカル源 |
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