JP2012048779A5 - - Google Patents

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Publication number
JP2012048779A5
JP2012048779A5 JP2010189132A JP2010189132A JP2012048779A5 JP 2012048779 A5 JP2012048779 A5 JP 2012048779A5 JP 2010189132 A JP2010189132 A JP 2010189132A JP 2010189132 A JP2010189132 A JP 2010189132A JP 2012048779 A5 JP2012048779 A5 JP 2012048779A5
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JP
Japan
Prior art keywords
resistance state
resistor
element according
memory element
resistance value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010189132A
Other languages
English (en)
Japanese (ja)
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JP2012048779A (ja
JP5527729B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2010189132A external-priority patent/JP5527729B2/ja
Priority to JP2010189132A priority Critical patent/JP5527729B2/ja
Priority to CN2011800413598A priority patent/CN103081016A/zh
Priority to US13/819,217 priority patent/US9135990B2/en
Priority to PCT/JP2011/069113 priority patent/WO2012026506A1/ja
Priority to TW100130671A priority patent/TW201230036A/zh
Publication of JP2012048779A publication Critical patent/JP2012048779A/ja
Publication of JP2012048779A5 publication Critical patent/JP2012048779A5/ja
Publication of JP5527729B2 publication Critical patent/JP5527729B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010189132A 2010-08-26 2010-08-26 メモリ素子の駆動方法及びメモリ素子を備える記憶装置 Expired - Fee Related JP5527729B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010189132A JP5527729B2 (ja) 2010-08-26 2010-08-26 メモリ素子の駆動方法及びメモリ素子を備える記憶装置
CN2011800413598A CN103081016A (zh) 2010-08-26 2011-08-25 存储元件的驱动方法及使用存储元件的存储装置
US13/819,217 US9135990B2 (en) 2010-08-26 2011-08-25 Drive method for memory element, and storage device using memory element
PCT/JP2011/069113 WO2012026506A1 (ja) 2010-08-26 2011-08-25 メモリ素子の駆動方法及びメモリ素子を用いた記憶装置
TW100130671A TW201230036A (en) 2010-08-26 2011-08-26 Driving method of memory element, and storage device having memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010189132A JP5527729B2 (ja) 2010-08-26 2010-08-26 メモリ素子の駆動方法及びメモリ素子を備える記憶装置

Publications (3)

Publication Number Publication Date
JP2012048779A JP2012048779A (ja) 2012-03-08
JP2012048779A5 true JP2012048779A5 (cg-RX-API-DMAC7.html) 2013-02-21
JP5527729B2 JP5527729B2 (ja) 2014-06-25

Family

ID=45723498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010189132A Expired - Fee Related JP5527729B2 (ja) 2010-08-26 2010-08-26 メモリ素子の駆動方法及びメモリ素子を備える記憶装置

Country Status (5)

Country Link
US (1) US9135990B2 (cg-RX-API-DMAC7.html)
JP (1) JP5527729B2 (cg-RX-API-DMAC7.html)
CN (1) CN103081016A (cg-RX-API-DMAC7.html)
TW (1) TW201230036A (cg-RX-API-DMAC7.html)
WO (1) WO2012026506A1 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI624837B (zh) * 2017-05-22 2018-05-21 旺宏電子股份有限公司 記憶體操作方法及記憶體操作裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7423787B2 (en) * 2001-03-01 2008-09-09 Ricoh Company, Ltd. Optical scanning module, device, and method, and imaging apparatus
US7443710B2 (en) 2004-09-28 2008-10-28 Spansion, Llc Control of memory devices possessing variable resistance characteristics
JPWO2006137111A1 (ja) 2005-06-20 2009-01-08 富士通株式会社 不揮発性半導体記憶装置及びその書き込み方法
JP4919146B2 (ja) 2005-09-27 2012-04-18 独立行政法人産業技術総合研究所 スイッチング素子
JPWO2007074504A1 (ja) 2005-12-26 2009-06-04 富士通株式会社 不揮発性半導体記憶装置及びその書き込み方法
WO2009034687A1 (ja) * 2007-09-10 2009-03-19 Panasonic Corporation 不揮発性記憶装置および不揮発性記憶装置へのデータ書込方法
JP5312782B2 (ja) * 2007-12-20 2013-10-09 株式会社船井電機新応用技術研究所 ナノギャップスイッチング素子の駆動方法及びナノギャップスイッチング素子を備える記憶装置
JP4544340B2 (ja) * 2008-01-24 2010-09-15 ソニー株式会社 電子素子およびその製造方法並びに記憶装置
JP5120883B2 (ja) * 2008-02-26 2013-01-16 株式会社船井電機新応用技術研究所 ナノギャップ素子の駆動方法及びナノギャップ素子を備える記憶装置
JP2010157568A (ja) 2008-12-26 2010-07-15 Funai Electric Advanced Applied Technology Research Institute Inc メモリセルアレイ
US8624217B2 (en) * 2010-06-25 2014-01-07 International Business Machines Corporation Planar phase-change memory cell with parallel electrical paths

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