JP2012039507A - ディスク型mems振動子 - Google Patents
ディスク型mems振動子 Download PDFInfo
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- JP2012039507A JP2012039507A JP2010179495A JP2010179495A JP2012039507A JP 2012039507 A JP2012039507 A JP 2012039507A JP 2010179495 A JP2010179495 A JP 2010179495A JP 2010179495 A JP2010179495 A JP 2010179495A JP 2012039507 A JP2012039507 A JP 2012039507A
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- 238000001514 detection method Methods 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 6
- 230000035515 penetration Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 238000000059 patterning Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2436—Disk resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
- H03H2009/02503—Breath-like, e.g. Lam? mode, wine-glass mode
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】ディスク型の振動子構造体1と、該振動子構造体1の両側に前記ディスク型振動子構造体の外周部に対して所定の空隙gを有して、それぞれ対向して配置される一対の駆動電極2,2と、該駆動電極2,2に同相の交流バイアス電圧を印加する手段と、前記ディスク型振動子構造体1と前記駆動電極2,2との間の静電容量に対応した出力を得る検出手段とを備えた静電駆動型のディスク型振動子において、前記ディスク型振動子構造体1がディスクの中心に貫通孔1aを有し、ワイン・グラス・モードで振動される。
【選択図】図1
Description
ディスク型MEMS振動子
図1は、本発明のディスク型MEMS振動子の概念的構成図である。
次に、図3に示す工程図に基づいて、本発明のディスク型MEMS振動子のMEMSによる製造方法を説明する。
1,10 振動体(ディスク)
2,20 駆動電極
3,30 検出電極
4,40 支持部
5 基板
6 第1絶縁膜
7 第2絶縁膜
8 第1導電層
9 犠牲層
10 振動子構造体
11 第1酸化膜
12 第2酸化膜
13 第2導電層
Claims (6)
- ディスク型の振動子構造体と、該振動子構造体の両側に前記ディスク型振動子構造体の外周部に対して所定の空隙を有して、それぞれ対向して配置される一対の駆動電極と、該駆動電極に同相の交流バイアス電圧を印加する手段と、前記ディスク型振動子構造体と前記駆動電極との間の静電容量に対応した出力を得る検出手段とを備えた静電駆動型のディスク型振動子において、前記ディスク型振動子構造体がディスクの中心に貫通孔を有し、ワイン・グラス・モードで振動されることを特徴とするディスク型振動子。
- 前記貫通孔の横断面形状が、正方形、円形、十字形または長方形であることを特徴とする請求項1に記載のディスク型振動子。
- 正方形、十字形または長方形の前記貫通孔の横断面形状が、各角部に丸みを有する横断面形状であることを特徴とする請求項2に記載のディスク型振動子。
- 前記貫通孔の各横断面形状の外径円の半径が、前記ディスクの半径の1/20から1/10であることを特徴とする請求項1から3のいずれか一項に記載のディスク型振動子。
- 前記振動子構造体が、単結晶シリコン、多結晶シリコン、単結晶ダイヤモンドまたは多結晶ダイヤモンドからなることを特徴とする請求項1から4のいずれか一項に記載のディスク型振動子。
- 前記ディスク型振動子が、MEMSにより製造されることを特徴とする請求項1から5のいずれか一項に記載のディスク型振動子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010179495A JP5711913B2 (ja) | 2010-08-10 | 2010-08-10 | ディスク型mems振動子 |
US13/814,738 US20130134837A1 (en) | 2010-08-10 | 2011-06-13 | Disk type mems resonator |
PCT/JP2011/063991 WO2012020601A1 (ja) | 2010-08-10 | 2011-06-13 | ディスク型mems振動子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010179495A JP5711913B2 (ja) | 2010-08-10 | 2010-08-10 | ディスク型mems振動子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012039507A true JP2012039507A (ja) | 2012-02-23 |
JP2012039507A5 JP2012039507A5 (ja) | 2013-03-28 |
JP5711913B2 JP5711913B2 (ja) | 2015-05-07 |
Family
ID=45567571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010179495A Expired - Fee Related JP5711913B2 (ja) | 2010-08-10 | 2010-08-10 | ディスク型mems振動子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20130134837A1 (ja) |
JP (1) | JP5711913B2 (ja) |
WO (1) | WO2012020601A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103964369A (zh) * | 2014-04-15 | 2014-08-06 | 杭州电子科技大学 | 电极横向可动的微机械圆盘谐振器 |
JP2017201273A (ja) * | 2016-05-06 | 2017-11-09 | 矢崎総業株式会社 | 電圧センサ |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103839826B (zh) * | 2014-02-24 | 2017-01-18 | 京东方科技集团股份有限公司 | 一种低温多晶硅薄膜晶体管、阵列基板及其制作方法 |
US11664781B2 (en) * | 2014-07-02 | 2023-05-30 | Stathera Ip Holdings Inc. | Methods and devices for microelectromechanical resonators |
US9813831B1 (en) | 2016-11-29 | 2017-11-07 | Cirrus Logic, Inc. | Microelectromechanical systems microphone with electrostatic force feedback to measure sound pressure |
US9900707B1 (en) | 2016-11-29 | 2018-02-20 | Cirrus Logic, Inc. | Biasing of electromechanical systems microphone with alternating-current voltage waveform |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006518119A (ja) * | 2002-12-17 | 2006-08-03 | ザ リージェンツ オブ ザ ユニバーシティ オブ ミシガン | マイクロメカニカル共鳴装置およびマイクロメカニカル装置の製造方法 |
US20070046398A1 (en) * | 2005-08-29 | 2007-03-01 | Nguyen Clark T | Micromechanical structures having a capacitive transducer gap filled with a dielectric and method of making same |
JP2007152501A (ja) * | 2005-12-06 | 2007-06-21 | Seiko Epson Corp | Mems振動子及びその製造方法 |
JP2008504771A (ja) * | 2004-07-01 | 2008-02-14 | コミツサリア タ レネルジー アトミーク | 変形量が大きな複合型微小共振器 |
-
2010
- 2010-08-10 JP JP2010179495A patent/JP5711913B2/ja not_active Expired - Fee Related
-
2011
- 2011-06-13 WO PCT/JP2011/063991 patent/WO2012020601A1/ja active Application Filing
- 2011-06-13 US US13/814,738 patent/US20130134837A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006518119A (ja) * | 2002-12-17 | 2006-08-03 | ザ リージェンツ オブ ザ ユニバーシティ オブ ミシガン | マイクロメカニカル共鳴装置およびマイクロメカニカル装置の製造方法 |
JP2008504771A (ja) * | 2004-07-01 | 2008-02-14 | コミツサリア タ レネルジー アトミーク | 変形量が大きな複合型微小共振器 |
US20070046398A1 (en) * | 2005-08-29 | 2007-03-01 | Nguyen Clark T | Micromechanical structures having a capacitive transducer gap filled with a dielectric and method of making same |
JP2007152501A (ja) * | 2005-12-06 | 2007-06-21 | Seiko Epson Corp | Mems振動子及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103964369A (zh) * | 2014-04-15 | 2014-08-06 | 杭州电子科技大学 | 电极横向可动的微机械圆盘谐振器 |
JP2017201273A (ja) * | 2016-05-06 | 2017-11-09 | 矢崎総業株式会社 | 電圧センサ |
Also Published As
Publication number | Publication date |
---|---|
JP5711913B2 (ja) | 2015-05-07 |
WO2012020601A1 (ja) | 2012-02-16 |
US20130134837A1 (en) | 2013-05-30 |
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