JP2012039160A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2012039160A JP2012039160A JP2011253655A JP2011253655A JP2012039160A JP 2012039160 A JP2012039160 A JP 2012039160A JP 2011253655 A JP2011253655 A JP 2011253655A JP 2011253655 A JP2011253655 A JP 2011253655A JP 2012039160 A JP2012039160 A JP 2012039160A
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- Prior art keywords
- conductor
- dielectric substrate
- base substrate
- strip
- side wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Microwave Amplifiers (AREA)
Abstract
【解決手段】ベース基板10の面を基準にして、誘電体基板13側が低く帯状導体18b側が高くなる傾斜面Gを有し、その傾斜面Gに線路導体パターン62を形成した絶縁ブロック61を、誘電体基板13と帯状導体18bとの間のベース基板10上に配置する。そして、絶縁ブロック61の傾斜面Gに形成された線路導体パターン62を介して帯状導体18bと回路パターン13bとの間をワイヤーWで接続する。
【選択図】図6
Description
11…半導体素子
12…第1誘電体基板
12a…回路パターン
13…第2誘電体基板
13a…回路パターン
14…第3誘電体基板
14a…線路導体
15…第4誘電体基板
15a…線路導体
16…側壁
17…蓋
18a…入力用帯状導体
18b…出力用帯状導体
19a…入力用リード線
19b…出力用リード線
S…ベース基板の面
Claims (2)
- 金属製ベース基板と、このベース基板上に配置された半導体素子と、前記ベース基板上に配置され、表面に回路パターンを形成した誘電体基板と、前記半導体素子および前記誘電体基板を囲んで前記ベース基板上に設けた枠状の側壁と、前記側壁の一部に設けられた絶縁物からなる側壁部分と、前記ベース基板の面を基準にして、前記回路パターンよりも高い位置で前記側壁部分を貫通する帯状導体と、前記ベース基板の面を基準にして、前記誘電体基板側が低く前記帯状導体側が高くなる傾斜面を有し、かつその傾斜面に線路導体パターンを形成し、前記誘電体基板と前記帯状導体との間の前記ベース基板上に配置された絶縁ブロックと、この絶縁ブロックの傾斜面に形成された前記線路導体パターンを介して前記帯状導体と前記回路パターンとの間および前記回路パターンと前記半導体素子との間をそれぞれ接続するワイヤーとを具備したことを特徴とする半導体装置。
- 前記絶縁ブロックを前記ベース基板上に設けた金属ブロック上に設けた請求項1に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011253655A JP5259807B2 (ja) | 2011-11-21 | 2011-11-21 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011253655A JP5259807B2 (ja) | 2011-11-21 | 2011-11-21 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010086000A Division JP5135376B2 (ja) | 2010-04-02 | 2010-04-02 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012039160A true JP2012039160A (ja) | 2012-02-23 |
JP5259807B2 JP5259807B2 (ja) | 2013-08-07 |
Family
ID=45850714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011253655A Expired - Fee Related JP5259807B2 (ja) | 2011-11-21 | 2011-11-21 | 半導体装置 |
Country Status (1)
Country | Link |
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JP (1) | JP5259807B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114362841A (zh) * | 2021-12-13 | 2022-04-15 | 深圳市卓汉材料技术有限公司 | 一种无源互调测试治具与无源互调测试系统 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57138420U (ja) * | 1981-02-25 | 1982-08-30 | ||
JPS57138422U (ja) * | 1981-02-25 | 1982-08-30 | ||
JPH02244711A (ja) * | 1989-03-17 | 1990-09-28 | Mitsubishi Electric Corp | 半導体パッケージ |
JP2002335136A (ja) * | 2001-05-11 | 2002-11-22 | Matsushita Electric Ind Co Ltd | 高周波半導体装置 |
-
2011
- 2011-11-21 JP JP2011253655A patent/JP5259807B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57138420U (ja) * | 1981-02-25 | 1982-08-30 | ||
JPS57138422U (ja) * | 1981-02-25 | 1982-08-30 | ||
JPH02244711A (ja) * | 1989-03-17 | 1990-09-28 | Mitsubishi Electric Corp | 半導体パッケージ |
JP2002335136A (ja) * | 2001-05-11 | 2002-11-22 | Matsushita Electric Ind Co Ltd | 高周波半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114362841A (zh) * | 2021-12-13 | 2022-04-15 | 深圳市卓汉材料技术有限公司 | 一种无源互调测试治具与无源互调测试系统 |
CN114362841B (zh) * | 2021-12-13 | 2023-12-15 | 深圳市卓汉材料技术有限公司 | 一种无源互调测试治具与无源互调测试系统 |
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